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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Popkov S. I., Terent'ev K. Yu., Vasil'ev A. D.
Заглавие : Forming High-Temperature Superconducting Layers at the Interfaces between Nonsuperconducting Phases
Место публикации : Tech. Phys. Lett. - 2020. - Vol. 46, Is. 10. - P.1004-1007. - ISSN 10637850 (ISSN), DOI 10.1134/S1063785020100247
Примечания : Cited References: 14. - The authors are grateful to D.M. Gokhfeld for comments made during the discussion of the results. The results were obtained using a Bruker D8Advance diffractometer (Bruker AXS) and the Quantum Design PPMS vibrating sample magnetometer of the Krasnoyarsk Regional Center for Collective Use, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences
Аннотация: An alternative technique for synthesizing high-temperature superconductor samples is proposed, in which superconducting layers should form on the surface of hard-melting Ho2BaCuO5 green phase grains immersed in the liquid phase BaCuO2 + CuO.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Liu, Youquan, Mei, Dajiang, Wang, Naizheng, Molokeev M. S., Jiang, Xingxing, Lin, Zheshuai
Заглавие : Intrinsic isotropic near-zero thermal expansion in Zn4B6O12X (X = O, S, Se)
Место публикации : ACS Appl. Mater. Interfaces. - 2020. - Vol. 12, Is. 34. - P.38435-38440. - ISSN 1944-8244, DOI 10.1021/acsami.0c12351. - ISSN 1944-8252(eISSN)
Примечания : Cited References: 43. - This work was supported by the National Scientific Foundations of China (Grants 51872297, 51702330, 11974360, 51972208, 51890864, and 51802321), Russian Foundation for Basic Research (Grant 17-52-53031), and Fujian Institute of Innovation (FJCXY18010201) in CAS. X.J. acknowledges the support from the Youth Innovation Promotion Association in CAS (Grant 2017035) and Youth Talent Promotion Project from China Association for Science and Technology
Предметные рубрики: CRYSTAL
Аннотация: Zero thermal expansion (ZTE) materials, keeping size constant as temperature varies, are valuable for resisting the deterioration of the performance from environmental temperature fluctuation, but they are rarely discovered due to the counterintuitive temperature-size effect. Herein, we demonstrate that a family of borates with sodalite cage structure, Zn4B6O12X (X = O, S, Se), exhibits intrinsic isotropic near-ZTE behaviors from 5 to 300 K. The very low thermal expansion is mainly owing to the coupling rotation of [BO4] rigid groups constrained by the bonds between Zn and cage-edged O atoms, while the central atoms in the cage have a negligible contribution. Our study has significant implications on the understanding of the ZTE mechanism and exploration of new ZTE materials.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Tyurnev V. V., Voloshin A. S., Leksikov An. A., Galeev R. G., Shabanov V. F.
Заглавие : A Bandpass Filter Based on Dielectric Layers with a Strip Conductor Subwavelength Grating at Their Interfaces
Место публикации : Dokl. Phys. - 2020. - Vol. 65, Is. 9. - P.343-348. - ISSN 10283358 (ISSN), DOI 10.1134/S1028335820090013
Примечания : Cited References: 12. - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, state assignment no. FEFE-2020-0013 “Development of the Theory of Self-Configurable Machine-Learning Algorithms for Simulating and Predicting Characteristics of Complex Systems”
Аннотация: The design of a multilayer bandpass filter has been investigated, in which each of the half-wavelength resonators consists of two dielectric layers with outer strip conductor gratings in the form of square grids and inner ones in the form of square patches. The grids serve as mirrors with specified reflective properties, which ensure optimal couplings of the outer resonators with free space and optimal coupling between the resonators. The patch gratings make it possible to tune the resonator eigenfrequency during the filter synthesis. The efficiency of the quasi-static calculation of the frequency response for the layered structure is shown for the case of a lattice period smaller than the wavelength in the dielectric and much smaller than the layer thickness. Since the calculation does not require much computing power, the parametric synthesis of the device can be performed on a conventional personal computer. The measured characteristics of the prototype of the synthesized third-order filter with a fractional passband width of ∼10% and a central passband frequency of ∼10.6 GHz are in good agreement with the calculation. The proposed design allows one to fabricate multilayer panels radio transparent in a certain frequency band for hiding microwave antennas.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Ovchinnikov S. G., Maximova O. A., Lyashchenko S. A., Yakovlev I. A., Varnakov S. N.
Заглавие : Effect of interfaces in the multilayer structures on the electronic states
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics, Siberian Federal Univercity
Место публикации : International workshop on the properties of functional MAX-materials (2nd FunMax): book of abstracts/ org. com. M. Farle [et al.]. - 2021. - P.15
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Baron F. A., Mikhlin, Yurii L., Molokeev M. S., Rautskiy M. V., Tarasov I. A., Volochaev M. N., Shanidze L. V., Lukyanenko A. V., Smolyarova T. E., Konovalov, Stepan O., Zelenov, Fyodor, V, Tarasov A. S., Volkov N. V.
Заглавие : Structural, optical, and electronic properties of Cu-doped TiNxOy grown by ammonothermal atomic layer deposition
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation of World Tier Laboratories [075-15-2019-1886]
Место публикации : ACS Appl. Mater. Interfaces. - 2021. - Vol. 13, Is. 27. - P.32531-32541. - ISSN 1944-8244, DOI 10.1021/acsami.1c08036. - ISSN 1944-8252(eISSN)
Примечания : Cited References: 69. - This research was funded by the RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (project code 20-42-240013) and by the grant of the Government of the Russian Federation for Creation of World Tier Laboratories (contract no. 075-15-2019-1886)
Предметные рубрики: OXYNITRIDE THIN-FILMS
TITANIUM-NITRIDE
CONFORMAL TIN
Аннотация: Copper-doped titanium oxynitride (TiNxOy) thin films were grown by atomic layer deposition (ALD) using the TiCl4 precursor, NH3, and O2 at 420 °C. Forming gas was used to reduce the background oxygen concentration and to transfer the copper atoms in an ALD chamber prior to the growth initiation of Cu-doped TiNxOy. Such forming gas-mediated Cu-doping of TiNxOy films had a pronounced effect on their resistivity, which dropped from 484 ± 8 to 202 ± 4 μΩ cm, and also on the resistance temperature coefficient (TCR), which decreased from 1000 to 150 ppm °C–1. We explored physical mechanisms causing this reduction by performing comparative analysis of atomic force microscopy, X-ray photoemission spectroscopy, X-ray diffraction, optical spectra, low-temperature transport, and Hall measurement data for the samples grown with and without forming gas doping. The difference in the oxygen concentration between the films did not exceed 6%. Copper segregated to the TiNxOy surface where its concentration reached 0.72%, but its penetration depth was less than 10 nm. Pronounced effects of the copper doping by forming gas included the TiNxOy film crystallite average size decrease from 57–59 to 32–34 nm, considerably finer surface granularity, electron concentration increase from 2.2(3) × 1022 to 3.5(1) × 1022 cm–3, and the electron mobility improvement from 0.56(4) to 0.92(2) cm2 V–1 s–1. The DC resistivity versus temperature R(T) measurements from 4.2 to 300 K showed a Cu-induced phase transition from a disordered to semimetallic state. The resistivity of Cu-doped TiNxOy films decreased with the temperature increase at low temperatures and reached the minimum near T = 50 K revealing signatures of the quantum interference effects similar to 2D Cu thin films, and then, semimetallic behavior was observed at higher temperatures. In TiNxOy films grown without forming gas, the resistivity decreased with the temperature increase as R(T) = – 1.88T0.6 + 604 μΩ cm with no semimetallic behavior observed. The medium range resistivity and low TCR of Cu-doped TiNxOy make this material an attractive choice for improved matching resistors in RF analog circuits and Si complementary metal–oxide–semiconductor integrated circuits.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Avramov P. V.
Заглавие : The role of interfaces in determination of electronic properties of complex silicon nanoclusters
Коллективы : "Trends in Nanomechanics and Nanoengineering", workshop, Сибирский федеральный университет, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : Workshop "Trends in Nanomechanics and Nanoengineering": book of abstracts/ предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P.11
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuklin A. V., Kuzubov A. A., Kovaleva E. A., Lee, Hyosun, Sorokin, Pavel B., Sakai, Seiji, Entani, Shiro, Naramoto, Hiroshi, Avramov P. V.
Заглавие : The direct exchange mechanism of induced spin polarization of low-dimensional π-conjugated carbon- and h-BN fragments at LSMO(001) MnO-terminated interfaces
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [14-13-00139]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.23-29. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.096. - ISSN 1873-4766(eISSN)
Примечания : Cited References:70. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow and the ICC of Novosibirsk State University for providing the computing resources. Russian Science Foundation (Grant No 14-13-00139) supported the work of Russian team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
THIN-FILMS
GIANT MAGNETORESISTANCE
METALLIC
Ключевые слова (''Своб.индексиров.''): graphene nanoribbons--dft--lsmo thin films--induced spin polarization--h-bn nanoribbons--half-metal
Аннотация: Induced spin polarization of π-conjugated carbon and h-BN low dimensional fragments at the interfaces formed by deposition of pentacene molecule and narrow zigzag graphene and h-BN nanoribbons on MnO2-terminated LSMO(001) thin film was studied using GGA PBE+U PAW D3-corrected approach. Induced spin polarization of π-conjugated low-dimensional fragments is caused by direct exchange with Mn ions of LSMO(001) MnO-derived surface. Due to direct exchange, the pentacene molecule changes its diamagnetic narrow-band gap semiconducting nature to the ferromagnetic semiconducting state with 0.15 eV energy shift between spin-up and spin-down valence bands and total magnetic moment of 0.11 μB. Direct exchange converts graphene nanoribbon to 100% spin-polarized half-metal with large amplitude of spin-up electronic density at the Fermi level. The direct exchange narrows the h-BN nanoribbon band gap from 4.04 to 1.72 eV in spin-up channel and converts the h-BN ribbon semiconducting diamagnetic nature to a semiconducting magnetic one. The electronic structure calculations demonstrate a possibility to control the spin properties of low-dimensional π-conjugated carbon and h-BN fragments by direct exchange with MnO-derived LSMO(001) surface for spin-related applications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin K. G., Yarikov S. A., Patrin G. S., Yakovchuk V. Yu., Lyamkin A. I.
Заглавие : Magnetic resonance studies of three-layer FeNi/Bi/FeNi films
Место публикации : J. Exp. Theor. Phys.: Maik Nauka-Interperiodica Publishing, 2017. - Vol. 124, Is. 5. - P.779-785. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776117040069
Примечания : Cited References: 28
Ключевые слова (''Своб.индексиров.''): anisotropy--binary alloys--ferromagnetic resonance--interface states--interfaces (materials)--iron alloys--magnetic resonance--magnetism--nickel alloys--electron magnetic resonance--film structure--interface anisotropy--interlayer coupling--magnetic state--temperature dependence--three-layer--magnetic anisotropy
Аннотация: The interlayer coupling in three-layer FeNi/Bi/FeNi films is studied by electron magnetic resonance. The magnetic anisotropy at the permalloy–bismuth interface is shown to play a significant role in the formation of the magnetic state of the film structure. The interlayer coupling oscillation period is found to be about 8 nm. The interlayer coupling and the interface anisotropy and their temperature dependences are determined. © 2017, Pleiades Publishing, Inc.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bykov A. A., Terent'ev K. Yu., Gokhfeld D. M., Savitskaya N. E., Popkov S. I., Petrov M. I.
Заглавие : Superconductivity on interfaces of nonsuperconducting granules La2CuO4 and La1.56Sr0.44CuO4
Место публикации : J. Supercond. Nov. Magn. - 2018. - Vol. 31, Is. 12. - P.3867–3874. - ISSN 15571939 (ISSN), DOI 10.1007/s10948-018-4668-x
Примечания : Cited References: 19. - The authors are grateful to D.A. Balaev for fruitful discussions, and I.V. Nemtsev for electronic microscope measurements in the center for shared use, KSC SB RAS. The work is supported by the Russian Science Foundation (project No. 17-72-10067).
Ключевые слова (''Своб.индексиров.''): magnetic properties--superconductivity--oxide superconductors--grain boundaries--lco--lsco--josephson media
Аннотация: Composite materials fabricated by annealing of nonsuperconducting ceramics La2CuO4 and La1.56Sr0.44CuO4 at 910 °C during various time are investigated. Areas of superconducting La1.85Sr0.15CuO4 phase arises at boundaries of contacting nonsuperconducting granules. The volume fraction of the superconducting phase increases with increasing annealing time. A model describing the magnetic and transport properties of the samples at low magnetic fields is constructed. The magnetotransport characteristics of obtained samples at low magnetic fields (∼ 100 Oe) are defined by weak links network formed by superconducting areas. At high fields, behavior of the system is defined by a magnetization of the disconnected superconducting islands. The average size of the superconducting areas has been estimated from an extended critical state model.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhou, Guojun, Jiang, Xingxing, Zhao, Jing, Molokeev M. S., Lin, Zheshuai, Liu, Quanlin, Xia, Zhiguo
Заглавие : Two-dimensional-layered perovskite ALaTa2O7:Bi3+ (A = K and Na) phosphors with versatile structures and tunable photoluminescence
Место публикации : ACS Appl. Mater. Interfaces. - 2018. - Vol. 10, Is. 29. - P.24648-24655. - ISSN 1944-8244, DOI 10.1021/acsami.8b08129
Примечания : Cited References: 48. - The authors acknowledge the support from the National Natural Science Foundation of China (Nos. 51722202, 91622125, and 51572023) and the Natural Science Foundations of Beijing (2172036) and RFBR (17-52-53031).
Предметные рубрики: GENERALIZED GRADIENT APPROXIMATION
YELLOW-EMITTING PHOSPHOR
Ключевые слова (''Своб.индексиров.''): 2d-layered perovskite--bi3+ emission--ion exchange--photoluminescence tuning--white light leds
Аннотация: Topological chemical reaction methods are indispensable for fabricating new materials or optimizing their functional properties, which is particularly important for two-dimensional (2D)-layered compounds with versatile structures. Herein, we demonstrate a low-temperature (∼350 °C) ion exchange approach to prefabricate metastable phosphors ALa1–xTa2O7:xBi3+ (A = K and Na) with RbLa1–xTa2O7:xBi3+ serving as precursors. The as-prepared ALa0.98Ta2O7:0.02 Bi3+ (A = Rb, K, and Na) share the same Dion–Jacobson type 2D-layered perovskite phase, and photoluminescence analyses show that ALa0.98Ta2O7:0.02 Bi3+ (A = Rb, K, and Na) phosphors exhibit broad emission bands peaking at 540, 550, and 510 nm, respectively, which are attributed to the nonradiative transition of Bi3+ from excited state 3P1 or 3P0 to ground state 1S0. The various Bi3+ local environments at the crystallographic sites enable the different distributions of emission and excitation spectra, and the photoluminescence tuning of ALa0.98Ta2O7:0.02 Bi3+ (A = Rb, K, and Na) phosphors are realized through alkali metal ion exchange. Notably, the combination of superior trivalent bismuth emission and low-temperature ion exchange synthesis leads to a novel yellow-emitting K(La0.98Bi0.02)Ta2O7 phosphor which is successfully applied in a white LED device based on a commercially available 365 nm LED chip. Our realizable cases of this low-temperature ion exchange strategy could promote exploration into metastable phosphors with intriguing properties.
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