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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kolovsky A. R., Bulgakov E. N.
Заглавие : Wannier-Stark states and Bloch oscillations in the honeycomb lattice
Место публикации : Phys. Rev. B. - 2013. - Vol. 87, Is. 3. - Ст.033602. - P. - ISSN 1050-2947, DOI 10.1103/PhysRevA.87.033602
Ключевые слова (''Своб.индексиров.''): bloch oscillations--chaotic state--honeycomb lattices--localization length--localized state--quantum particles--static fields--tight-binding approximations--solid state physics--honeycomb structures
Аннотация: We study a quantum particle in a tilted honeycomb lattice in the tight-binding approximation. First we discuss the particle eigenstates, i.e., the stationary Wannier-Stark states. These states are proved to be extended states for the rational directions of the static field and localized states for the irrational directions. We find energy bands of the extended states and analyze the localized states. It is shown, in particular, that the localized honeycomb Wannier-Stark states are chaotic states with irregular dependence of the localization length on the static field magnitude. Second we discuss Bloch oscillations of the quantum particle. Irregular Bloch oscillations for irrational directions are observed. В© 2013 American Physical Society.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G., Zharkov S. M.
Заглавие : Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry
Место публикации : J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст.123924. - P. - ISSN 0021-8979, DOI 10.1063/1.3600056
Ключевые слова (''Своб.индексиров.''): channel switching--comparative analysis--fe films--fe layer--ferromagnetic films--high temperature--hybrid structure--inversion layer--metal-insulator-semiconductors--negative magneto-resistance--planar geometries--positive magnetoresistance--schottky barriers--semiconductor substrate--temperature variation--weak localization--critical currents--electric resistance--ferromagnetic materials--geometry--magnetic fields--magnetoelectronics--magnetoresistance--metal insulator boundaries--metal insulator transition--mis devices--schottky barrier diodes--silicon--silicon compounds--switching circuits--transport properties--semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kolovsky A. R., Chesnokov I. Yu., Mantica G.
Заглавие : Cyclotron-Bloch dynamics of a quantum particle in a two-dimensional lattice. II. Arbitrary electric field directions
Место публикации : Phys. Rev. E: American Physical Society, 2012. - Vol. 86, Is. 4. - Ст.41146. - ISSN 1539-3755, DOI 10.1103/PhysRevE.86.041146
Примечания : Cited References: 15. - We thank Jean Bellissard and Italo Guarneri for illuminating comments on the nature of the energy spectrum for irrational beta. Computations for this work have been performed on the CSN4 cluster of INFN in Pisa. G. M. acknowledges the support of MIUR-PRIN project "Nonlinearity and Disorder in Classical and Quantum Transport Processes."
Предметные рубрики: MAGNETIC-FIELDS
LOCALIZATION
Аннотация: We study the quantum dynamics of a charged particle in a two-dimensional lattice, subject to constant and homogeneous electric and magnetic fields. We find that different regimes characterize these motions, depending on a combination of conditions, corresponding to weak and strong electric field intensities, rational or irrational directions of the electric field with respect to the lattice, and small or large values of the magnetic (Peierls) phase.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bulgakov E. N., Kolovsky A. R.
Заглавие : Induced tunneling and localization for a quantum particle in tilted two-dimensional lattices
Коллективы : Russian Academy of Sciences through the SB RAS [29]
Место публикации : Phys. Rev. B: American Physical Society, 2014. - Vol. 89, Is. 3. - Ст.035116. - ISSN 1098-0121, DOI 10.1103/PhysRevB.89.035116. - ISSN 1550-235X
Примечания : Cited References: 17. - The authors express their gratitude to D. N. Maksimov for useful remarks and acknowledge financial support of the Russian Academy of Sciences through the SB RAS integration project No. 29 Dynamics of atomic Bose-Einstein condensates in optical lattices.
Предметные рубрики: DYNAMIC LOCALIZATION
CHARGED-PARTICLE
OPTICAL LATTICE
ELECTRIC-FIELD
DIRAC POINTS
Аннотация: We consider a quantum particle in tilted two-dimensional lattices in the tight-binding approximations. We show that for certain lattice geometries the particle can freely move across the lattice in the direction perpendicular to the vector of the static force. This effect is argued to be analog of the photon-induced tunneling in driven one-dimensional lattices. We calculate the particle dispersion relation by using a method based on the Bogoliubov-Mitropolskii averaging technique from the theory of dynamical systems. This dispersion relation draws the analogy with driven one-dimensional lattices further by eventually showing band collapses when a control parameter is varied.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Arkhipkin V. G., Myslivets S. A., Timofeev I. V., Shabanov A. V., Vetrov S. Ya., Timofeev V. P.
Заглавие : Photonic crystals with resonantly absorbing defects
Коллективы : International Conference on Laser and Fiber-Optical Networks Modeling (8; 2006 ; Jun 29-Jul 01; Kharkiv)
Место публикации : LFNM 2006: 8th International Conference on Laser and Fiber-Optical Networks Modeling, Proceedings: IEEE, 2006. - P.313-316. - ISBN 1-4244-0233-6
Примечания : Cited References: 12
Предметные рубрики: MICROCAVITIES
DISPERSION
SPECTRA
Ключевые слова (''Своб.индексиров.''): photonic crystal--photonic band gap--resonantly absorbing gas--light localization
Аннотация: We show that the defect mode of photonic crystal with resonantly absorbing gas in defect is splitted due to effects of linear absorption and dispersion of resonant atoms. The splitting and shape of the lines is very sensitive to an incidence-angle of radiation on PC. The cases of one and two defects are considered.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Hu J., Liu X., Yue C. L., Liu J. Y., Zhu H. W., He J. B., Wei J., Mao Z. Q., Antipina, L. Yu., Popov Z. I., Sorokin P.B., Liu T.J., Adams P.W., Radmanesh S. M. A., Spinu L., Ji H., Natelson D.
Заглавие : Enhanced electron coherence in atomically thin Nb3SiTe6
Коллективы : US National Science Foundation [DMR-1205469], NSF EPSCoR Cooperative Agreement [EPS-1003897], Louisiana Board of Regents; US Department of Energy, Office of Science, Basic Energy Sciences [DE-FG02-07ER46420], Russian Science Foundation [14-12-01217], Russian Federation [MK-6218.2015.2, 14.Z56.15.6218-MK], Leading Science School program [NSh-2886.2014.2], US Department of Energy, Office of Science, Basic Energy Sciences award [DE-FG02-06ER46337], US National Science Foundation under the NSF EPSCoR Cooperative Agreement [EPS-1003897]
Место публикации : Nat. Phys. - 2015. - Vol. 11, Is. 6. - P.471-476. - ISSN 1745, DOI 10.1038/NPHYS3321. - ISSN 17452481(eISSN)
Примечания : Cited References:38. - The authors are grateful to J. DiTusa for informative discussions. The work at Tulane is supported by the US National Science Foundation under grant DMR-1205469 and the NSF EPSCoR Cooperative Agreement No. EPS-1003897, with additional support from the Louisiana Board of Regents. P.W.A. and T.J.L. acknowledge the support of the US Department of Energy, Office of Science, Basic Energy Sciences, under Award No. DE-FG02-07ER46420. L.Y.A. and P.B.S. acknowledge the support of the Russian Science Foundation (project #14-12-01217) and are grateful to the Joint Supercomputer Center of the Russian Academy of Sciences and 'Lomonosov' Research Computing Center for the opportunity of using a cluster computer for the quantum-chemical calculations. P.B.S. acknowledges a Grant of the President of the Russian Federation for government support of young PhD scientists MK-6218.2015.2 (project ID 14.Z56.15.6218-MK). Z.I.P. acknowledges the support of the Leading Science School program (No NSh-2886.2014.2). D.N. and H.J. acknowledge support through the US Department of Energy, Office of Science, Basic Energy Sciences award DE-FG02-06ER46337. The work at UNO is supported by the US National Science Foundation under the NSF EPSCoR Cooperative Agreement No. EPS-1003897, with additional support from the Louisiana Board of Regents.
Предметные рубрики: PHONON SCATTERING RATES
WEAK-LOCALIZATION
METAL-FILMS
Аннотация: It is now well established that many of the technologically important properties of two-dimensional (2D) materials, such as the extremely high carrier mobility in graphene(1) and the large direct band gaps in MoS2 monolayers(2), arise from quantum confinement. However, the influence of reduced dimensions on electron-phonon (e-ph) coupling and its attendant dephasing effects in such systems has remained unclear. Although phonon confinement(3-7) is expected to produce a suppression of e-ph interactions in 2D systems with rigid boundary conditions(6,7), experimental verification of this has remained elusive(8). Here, we show that the e-ph interaction is, indeed, modified by a phonon dimensionality crossover in layered Nb3SiTe6 atomic crystals. When the thickness of the Nb3SiTe6 crystals is reduced below a few unit cells, we observe an unexpected enhancement of the weak-antilocalization signature in magnetotransport. This finding strongly supports the theoretically predicted suppression of e-ph interactions caused by quantum confinement of phonons.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Knyazev, Yu. V., Kazak N. V., Platunov M. S., Ivanova N. B., Bezmaternykh L. N., Arauzo A., Bartolome J., Ovchinnikov S. G.
Заглавие : Disorder- and correlation-induced charge carriers localization in oxyborate MgFeBO4, Mg0.5Co0.5FeBO4, CoFeBO4 single crystals
Место публикации : J. Alloys Compd.: Elsevier Science, 2015. - Vol. 642. - P.232-237. - ISSN 0925, DOI 10.1016/j.jallcom.2015.04.056. - ISSN 18734669(eISSN)
Примечания : Cited References:32. - This work has been financed by Council for Grants of the President of the Russian Federation (Project Nos. NSh-2886.2014.2, SP-938.2015.5), Russian Foundation for Basic Research (Project Nos. 13-02-00958-a, 13-02-00358-a, 14-02-31051-mol-a). The work of one of coauthors (M.S.P.) was supported by the grant of KSAI "Krasnoyarsk Regional Fund of Supporting Scientific and Technological Activities'' and by the Program of Foundation for Promoting the Development of Small Enterprises in Scientific and Technical Sphere ("UMNIK'' program). Financial support from the Spanish MINECO MAT11/23791 and DGA IMANA project E-34 is acknowledged.
Предметные рубрики: WARWICKITE
Fe2OBO3
FeBO3
Ключевые слова (''Своб.индексиров.''): transition metal alloys and compounds--disordered system--semiconductors--electrical transport
Аннотация: The temperature dependence of the resistivity of single crystalline Mg1−xCoxFeBO4 samples with x = 0.0, 0.5, 1.0 is investigated for the temperature range (210–400 K). The conduction was found to be governed by Mott variable-range hopping (VRH) in the low-temperature range (T = 210–270 K) and by thermo-activation mechanism in the high-temperature range (T = 280–400 K). Microscopic electronic parameters, such as the density of the localized states near the Fermi level, localization length, the hopping length, and the activation energy have been obtained. The change of the activation energy observed at high-temperature range was attributed to local structure distortions around Fe and Co atoms. The complicated behavior of charge transfer mechanisms is discussed based on two approaches: atomic disorder and electron correlations.Температурная зависимость сопротивления монокристаллических образцов Mg1- XCoxFeBO4 с х = 0,0; 0.5, 1.0 исследована в интервале температур (210-400 К). Было установлено, что проводимость регулируется Мотт-переменной длиной прыжка (VRH) в области низких температур (T = 210-270 К) и термо-активационным механизмом в области высоких температур (Т = 280-400 К). Микроскопические электронные параметры, такие как плотность локализованных состояний вблизи уровня Ферми, длины локализации, длина прыжка, и энергия активации были получены. Изменение энергии активации наблюдается при высокой температурном Диапазоне, что было связано с локальными искажениями структуры вокруг Fe и Co атомов. Сложный механизм поведения переноса заряда обсуждается на основе двух подходов: атомный беспорядок и электронная корреляция.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Gornakov K. O., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Yozhikova E. V.
Заглавие : Room temperature magneto-transport properties of nanocomposite Fe–In2O3 thin films
Место публикации : Physica B. - 2015. - Vol. 478. - P.135-137. - ISSN 0921-4526, DOI 10.1016/j.physb.2015.08.054
Примечания : Cited References: 28. - This study was supported by the Russian Foundation for Basic Research (Grants # 15-02-00948-A,), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the program of Foundation for Promotion of Small Enterprises in Science and Technology (No 6662 FY2015) ("UMNIK" program).
Предметные рубрики: Doped In2O3 Films
High-performance
Indium oxide
Transistors
Magnetoresistance
Ferromagnetism
Ключевые слова (''Своб.индексиров.''): indium oxide--fe-in2o3 thin films--weak localization--disordered semiconductors
Аннотация: A ferromagnetic Fe–In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe–In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe–In2O3 thin film had n=1.94·1020 cm−3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~−0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Sandalov I. S., Zamkova N. G., Zhandun V. S., Ovchinnikov S. G.
Заглавие : Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides
Коллективы : International seminar on ferroelastic physics, Международный семинар по физике сегнетоэластиков, Российская академия наук, Воронежский государственный технический университет
Место публикации : The Eighth Int. Sem. on Ferroelastic Phys.: book of abstracts. - 2015. - P.362

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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sandalov I. S., Zamkova N. G., Zhandun V. S., Ovchinnikov S. G.
Заглавие : Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides
Коллективы : European Crystallographic Meeting
Место публикации : Acta Crystallogr. A: Wiley-Blackwell, 2015. - Vol. 71, Supplement. - Ст.s362. - ISSN 0108-7673, DOI 10.1107/S2053273315094590
Ключевые слова (''Своб.индексиров.''): strongly correlated electrons--delocalization
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