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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Fedoseev A. D.
Заглавие : Fano antiresonance induced by the rashba spin-orbit coupling in systems with conduction channels exhibiting the points of nonanalyticity in fermion paths
Коллективы : Russian Foundation for Basic Research [16-42-242036, 16-42-243056, 17-42-240441]; Government of the Krasnoyarsk Territory; Krasnoyarsk Region Science and Technology Support Fund [21/16, 29/16, 02/17]
Место публикации : JETP Letters. - 2017. - Vol. 106, Is. 5. - P.302-307. - ISSN 0021-3640, DOI 10.1134/S0021364017170131. - ISSN 1090-6487(eISSN)
Примечания : Cited References:17. - This work was funded by the Russian Foundation for Basic Research (project nos. 16-42-242036, 16-42-243056, and 17-42-240441), Government of the Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the Research (project nos. 21/16, 29/16, and 02/17).
Аннотация: It is shown that the combined effect of the nonanalyticity of the channel for the motion of charge carriers and the Rashba spin-orbit coupling induces resonant anomalies in the transport characteristics of nanosystems related to the size quantization. When the characteristic length determined by the ratio of the hopping integral and the spin-orbit coupling constant coincides with the distance between the points of nonanalyticity, the size effect arises in the channel. It manifests itself in the complete reflection from the device, which can be treated as the Fano antiresonance. The current-voltage characteristics of the nanosystem with the nonanalytical channel undergo significant changes at slight variations of the spin-orbit coupling constant near its critical value.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Fedoseev A. D.
Заглавие : Effect of total reflection from a symmetric two-channel device with fermion path nonanalyticity points induced by Rashba spin-orbit coupling
Место публикации : Bull. Russ. Acad. Sci. Phys. - 2018. - Vol. 82, Is. 5. - P.550-553. - ISSN 10628738 (ISSN), DOI 10.3103/S1062873818050313
Примечания : Cited References: 8. - The reported study was funded by Russian Foundation for Basic Research (project nos. 16-42-242036, 16-42-243056, and 17-42-240441), Government of Krasnoyarsk Territory, and Krasnoyarsk Region Science and Technology Support Fund to the research (project nos. 22/17, 24/17, and 02/17).
Ключевые слова (''Своб.индексиров.''): electron transport--nonanalyticity--rashba spin-orbit coupling--regular polygon--spin-orbit couplings--symmetric systems--total reflection--transmission coefficients
Аннотация: The effect Rashba spin-orbit coupling has on transmission coefficient through a symmetric system with fermion path nonanalyticity points is illustrated using the example of a regular polygon-shaped chain. It is shown that the current passage through a device is blocked at the critical spin-orbit coupling values determined by the system’s geometry. At the near-critical spin-orbit coupling values, electron transport is possible only in a narrow range of energies.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedoseev A. D.
Заглавие : The edge states properties of the topological insulator with fermion path nonanalyticity points located at the edge
Место публикации : J. Phys.: Condens. Matter. - 2020. - Vol. 32, Is. 21. - Ст.215301. - ISSN 09538984 (ISSN), DOI 10.1088/1361-648X/ab73a9
Примечания : Cited References: 46. - The author thanks V V Val'kov and M M Korovushkin for the fruitful discussions and valuable remarks. The reported study was funded by the RAS Presidium program for fundamental research No. 32 'Nanostructures: physics, chemistry, biology and technology fundamentals', the Russian Foundation for Basic Research (project nos. 19-02-00348, 18-32-00443), Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research projects: 'Manifestation of Coulomb interactions and effects of restricted geometry in properties of topological edge states of nanostructures with spin–orbit coupling' (No. 18-42-243017), Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project no. MK-3722.2018.2)
Аннотация: The edge states properties of a finite-size 2D topological insulator (TI) with the open boundary conditions in both directions are studied. It is shown that fermion path nonanalyticity points appearing on the edge of finite-size TI cause a nonuniform edge state distribution along the TI edge. The character of this distribution depends substantially on the edge state's energy position in the bulk band gap. The edge state with the energy in the middle of the gap tends to be located in the corners between two nonparallel edges of the system, while the edge states with the energy close to the bulk band edge avoid the corners. The monotonic transition from one space distribution of the edge state wave function to another along the edge state's band is observed. The mentioned edge state's structure leads to the nonlinear current-voltage characteristic of the square-shaped TI with contacts connected with the corners of the device. It opens the possibility to control the current with the gate voltage and is useful for construction the nano-size devices. For the edge states with energy in the middle of a bulk gap, the vortex structure of the probability flux located near corners is found.
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