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Alekseev, K. N.
Direct-current generation due to wave mixing in semiconductors / K. N. Alekseev, M. V. Erementchouk, F. V. Kusmartsev // Europhys. Lett. - 1999. - Vol. 47, Is. 5. - P. 595-600, DOI 10.1209/epl/i1999-00430-0. - Cited References: 34 . - ISSN 0295-5075

РУБ Physics, Multidisciplinary
Рубрики:
BLOCH OSCILLATOR
   SUPERLATTICES
   PHOTOCURRENT
   TRANSPORT
   FREQUENCY
   FIELD
   RECTIFIERS
   EMISSION
   CHAOS
   GAAS
Аннотация: We describe an effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow-gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Loughborough Univ Technol, Sch Math & Phys Sci, Loughborough LE11 3TU, Leics, England
Russian Acad Sci, LD Landau Theoret Phys Inst, Chernogolovka 142432, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Sch. of Math. and Physical Sciences, Loughborough University, Loughborough LE11 3TU, United Kingdom
Landau Inst. for Theoretical Physics, Russian Academy of Sciences, Moscow 142432, Russian Federation

Доп.точки доступа:
Erementchouk, M. V.; Kusmartsev, F. V.
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Alekseev, K. N.
Optical chaos in nonlinear photonic crystals / K. N. Alekseev, A. V. Ponomarev // JETP Letters. - 2002. - Vol. 75, Is. 4. - P. 174-178, DOI 10.1134/1.1475717. - Cited References: 34 . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
POLED LITHIUM-NIOBATE
   3RD-HARMONIC GENERATION
   WAVE-GUIDES
   SUPERLATTICES
   CHI((2))
Аннотация: We examine the spatial evolution of lightwaves in a nonlinear photonic crystal with a quadratic nonlinearity, when a second harmonic and a sum-frequency generation are simultaneously quasi-phase-matched. We find the conditions for a transition to Hamiltonian chaos for different amplitudes of lightwaves at the crystal boundary. (C) 2002 MAIK "Nauka/ Interperiodica".

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Держатели документа:
Univ Oulu, Dept Phys Sci, FIN-90014 Oulu, Finland
Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany
Russian Acad Sci, LV Kirensky Phys Inst, Theory Nonlinear Proc Lab, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Dept Phys, Krasnoyarsk 660041, Russia
ИФ СО РАН
Max-Planck-Inst. Physik Komplexer S., D-01187 Dresden, Germany
Theor. of Nonlinear Processes Lab., Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Department of Physics, Krasnoyarsk State University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Ponomarev, A. V.
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Alekseev, K. N.
Pendulum limit, chaos and phase-locking in the dynamics of ac-driven semiconductor superlattices / K. N. Alekseev, F. V. Kusmartsev // Phys. Lett. A. - 2002. - Vol. 305, Is. 5. - P. 281-288, DOI 10.1016/S0375-9601(02)01420-2. - Cited References: 60 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary
Рубрики:
STRANGE NONCHAOTIC ATTRACTORS
   DC VOLTAGE GENERATION
   JOSEPHSON-JUNCTIONS
   GAAS/ALAS SUPERLATTICE
   BLOCH OSCILLATIONS
   TERAHERTZ RADIATION
   ELECTRIC-FIELD
   THZ RADIATION
   FREQUENCY
   TRANSPORT
Кл.слова (ненормированные):
semiconductor superlattice -- pendulum -- chaos -- phase-locking -- Josephson junction -- Chaos -- Josephson junction -- Pendulum -- Phase-locking -- Semiconductor superlattice -- analytic method -- analytical parameters -- article -- dynamics -- electric potential -- semiconductor -- temperature
Аннотация: We describe a limiting case when nonlinear dynamics of an ac-driven semiconductor superlattice in the miniband transport regime is governed by a periodically forced and damped pendulum equations. We find analytically the conditions for a transition to chaos. With increasing temperature the chaos disappears. We also discuss fractional do voltage states in a superlattice originating from phase-locked states of the pendulum. (C) 2002 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Oulu Univ, Dept Phys Sci, FIN-90014 Oulu, Finland
LV Kirenskii Inst Phys, Theory Nonlinear Proc Lab, Krasnoyarsk 660036, Russia
Loughborough Univ Technol, Dept Phys, Loughborough LE11 3TU, Leics, England
ИФ СО РАН
Department of Physical Sciences, University of Oulu, P.O. Box 3000, FIN-90014, Oulu, Finland
Theory of Nonlin. Proc. Laboratory, Kirensky Institute of Physics, Krasnoyarsk 660036, Russian Federation
Department of Physics, Loughborough University, Loughborough LE11 3TU, United Kingdom

Доп.точки доступа:
Kusmartsev, F. V.
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Chernozatonskii, L. A.
Electronic superlattices and waveguides based on graphene: structures, properties and applications / L. A. Chernozatonskii, P. B. Sorokin // Phys. Status Solidi BVol. 245, Is. 10. - P. 2086-2089, DOI 10.1002/pssb.200879578. - Cited References: 21. - We are grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for the possibility of using a cluster computer for quantum-chemical calculations, to I.V. Stankevich, L. Biro and J. Bruning for fruitful discussions. The geometry of all presented structures was visualized by ChemCraft software (http://www.chemcraftprog.com). This work was supported by the Russian Foundation for Basic Research (project no. 08-02-01096). . - ISSN 0370-1972

РУБ Physics, Condensed Matter
Рубрики:
PSEUDOPOTENTIALS
GAS
Аннотация: The new class of quasi-2D superlattices based on graphene with periodically adsorbed hydrogen pairs was proposed. The ab initio DFT method was used for optimization of the atomic geometry and electronic structure of propose structures. It was found that the superlattices band gap decreases nonmonotonically with distance between hydrogen pairs. Based on these results we hope that the graphene superlattices can be promising candidates for various nanotechnological applications especially as elements in nanoelectronic devices. (C) 2008 WILEY-VCH Verlag GmBH & Co. KGaA, Weinheim

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Держатели документа:
[Chernozatonskii, Leonid A.
Sorokin, Pavel B.] Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119334, Russia
[Sorokin, Pavel B.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Sorokin, Pavel B.] Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, 4 Kosigina st., Moscow 119334, Russian Federation
Siberian Federal University, 79 Svobodny av., Krasnoyarsk 660041, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Sorokin, P. B.; Сорокин, Павел Б.
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Chernozatonskii, L. A.
Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms / L. A. Chernozatonskii, P. B. Sorokin, J. W. Bruning // Appl. Phys. Lett. - 2007. - Vol. 91, Is. 18. - Ст. 183103, DOI 10.1063/1.2800889. - Cited References: 24 . - ISSN 0003-6951

РУБ Physics, Applied
Рубрики:
CARBON
GAS
Кл.слова (ненормированные):
Electronic properties -- Energy gap -- Graphite -- Hydrogen -- Semiconductor materials -- Superlattices -- Electronic spectra -- Graphene sheets -- Quasi-two-dimensional heterostructures -- Semiconducting nanostructures -- Nanostructured materials
Аннотация: It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the formation of 2HG-SL changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with n, but with nonzero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of zigzag strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. (C) 2007 American Institute of Physics.

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Держатели документа:
Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119334, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Humboldt Univ, Math Inst, D-12489 Berlin, Germany
ИФ СО РАН
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, 4 Kosigina St., Moscow 119334, Russian Federation
Siberian Federal University, 79 Svobodny Ave., Krasnoyarsk 660041, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Academgorodok, Krasnoyarsk 660036, Russian Federation
Institute of Mathematics, Humboldt University of Berlin, Berlin 12489, Germany

Доп.точки доступа:
Sorokin, P. B.; Bruning, J. W.
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Cluster structure and superlattices in Co and Fe films / S. M. Zharkov [et al.] // JETP Letters. - 1997. - Vol. 65, Is. 12. - P. 915-918, DOI 10.1134/1.567449. - Cited References: 9 . - ISSN 0021-3640

РУБ Physics, Multidisciplinary

Аннотация: The process of dendritic crystallization of Co and Fe films is investigated. Electron-diffraction methods show that fractal growth of dendrites in Co and Fe films proceeds by multiple twinning of the elements of a nanostructure consisting of different clusters with close-packing. The formation of superstructures is explained by a shell model of a cluster structure forming nanocrystallites. (C) 1997 American Institute of Physics.

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Держатели документа:
L. V. Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Zharkov, S. M.; Жарков, Сергей Михайлович; Zhigalov, V. S.; Жигалов, Виктор Степанович; Kveglis, L. I.; Lisitsa, Y. V.; Renskaya, K. V.; Frolov, G. I.; Фролов, Георгий Иванович
}
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Coherent carrier dynamics in semiconductor superlattices / E. . Diez [et al.] // Phys. Lett. A. - 1998. - Vol. 240, Is. 1-2. - P. 109-111, DOI 10.1016/S0375-9601(98)00023-1. - Cited References: 7 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary
Рубрики:
RABI OSCILLATIONS
Аннотация: We investigate the coherent dynamics of carriers in semiconductor superlattices driven by ac-dc electric fields. We solve numerically the time-dependent effective-mass equation for the envelope function. We find that carriers undergo Rabi oscillations when the driving frequency is close to the separation between minibands. (C) 1998 Elsevier Science B.V.

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Держатели документа:
Univ Carlos III Madrid, GISC, Dept Matemat, E-28911 Madrid, Spain
Univ Vigo, Dept Tecnol Comunicac, E-36200 Vigo, Spain
Univ Complutense Madrid, GISC, Dept Fis Mat, E-28040 Madrid, Spain
Univ Calif Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA
Univ Calif Los Alamos Natl Lab, CNLS, Los Alamos, NM 87545 USA
LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Diez, E.; Gomez-Alcala, R.; Dominguez-Adame, F.; Sanchez, A.; Berman, G. P.
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Combined effects of 2D and 3D inhomogeneities on high-frequency susceptibility of superlattices [Text] / V. A. Ignatchenko, D. S. Tsikalov // IV Euro-Asian Symposium "Trends in MAGnetism" Nanospintronics (EASTMAG-2010). School for young scientist "Spintronics" : June 28 - Lule 2, 2010"Book of abstracts. - Ekaterinburg, 2010. - P. 327

РИНЦ

Доп.точки доступа:
Ignatchenko, V.A.; Tsikalov, D.S.; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg)Уральское отделение РАН
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    Combined Effects of 2D and 3D Inhomogeneities on the Dynamic Susceptibility of Superlattices / V. A. Ignatchenko, D. S. Tsikalov // TRENDS IN MAGNETISM / . - STAFA-ZURICH : TRANS TECH PUBLICATIONS LTD, 2011. - Vol. 168-169. - P97-100. - (Solid State Phenomena), DOI 10.4028/www.scientific.net/SSP.168-169.97. - Cited Reference Count: 10 . - ISBN 1012-0394
Рубрики:
Materials Science, Multidisciplinary
   Physics, Condensed Matter
Кл.слова (ненормированные):
waves -- superlattices -- inhomogeneities -- dynamic susceptibility -- dos
Аннотация: The dynamic susceptibility and the one-dimensional density of states (DOS) of an initially sinusoidal superlattice (SL) with simultaneous presence of two-dimensional (2D) phase inhomogeneities that simulate the deformations of the interfaces between the SL's layers and three-dimensional (3D) amplitude inhomogeneities of the layer material of the SL were investigated. An analytical expression for the averaged Green's function of the sinusoidal SL with 2D phase inhomogeneities was obtained in the Bourret approximation. It was shown that the effect of increasing asymmetry of heights of the dynamic susceptibility peaks at the edge of the Brillouin zone of the SL, which was found in [6] at increasing the rms fluctuations of 2D inhomogeneities, also takes place at increasing the correlation wave number of such inhomogeneities. It was also shown that The increase of the tins fluctuations of 3D amplitude inhomogeneities in the superlattice with 2D phase inhomogeneities leads to the suppression of the asymmetry effect and to the decrease of the depth of the DOS gap.

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Держатели документа:
LV Kirensky Inst Phys SB RAS, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Ignatchenko, V. A.; Игнатченко, Вальтер Алексеевич; Tsikalov, D. S.; Цикалов, Денис Сергеевич; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); Russian Acad Sci, Inst Metal Phys
}
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10.

Density-functional study of the Si/SiO2 interfaces in short-period superlattices: Vibrational states and Raman spectra / M. Smirnov, E. Roginskii, A. Savin [et al.] // Photonics. - 2023. - Vol. 10, Is. 8. - Ст. 902, DOI 10.3390/photonics10080902. - Cited References: 61. - The study was supported by grants from the Russian Science Foundation (project No. 22-22-20021) and the Saint-Petersburg Science Center (project No. 32/2022), using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. - The study was performed using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. The authors thank Konstantin Smirnov for his valuable advice. The calculations were also performed in part using the facilities of the JSCC supercomputer center at RAS and the Konstantinov computational center at the Ioffe Institute . - ISSN 2304-6732
Кл.слова (ненормированные):
silicon -- cristobalite -- interface -- superlattice -- Raman spectra -- DFT modelling
Аннотация: Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces.

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Держатели документа:
Faculty of Physics, Saint-Petersburg State University, Universitetskaya nab. 7/9, Saint-Petersburg 199034, Russia
Laboratory of Spectroscopy of Solid State, Ioffe Institute, Politehnicheskaya St. 26, Saint-Petersburg 194021, Russia
Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok St. 50/38, Krasnoyarsk 660036, Russia
School of Engineering and Construction, Siberian Federal University, Svobodny pr. 82, Krasnoyarsk 660041, Russia
Center for Optical and Laser Materials Research, Research Park, Saint-Petersburg State University, Universitetskaya nab. 7/9, Saint-Petersburg 199034, Russia

Доп.точки доступа:
Smirnov, Mikhail; Roginskii, Evgenii; Savin, Aleksandr; Oreshonkov, A. S.; Орешонков, Александр Сергеевич; Pankin, Dmitrii
}
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