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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Alekseev K. N., Erementchouk M. V., Kusmartsev F. V.
Заглавие : Direct-current generation due to wave mixing in semiconductors
Место публикации : Europhys. Lett. - 1999. - Vol. 47, Is. 5. - P.595-600. - ISSN 0295-5075, DOI 10.1209/epl/i1999-00430-0
Примечания : Cited References: 34
Предметные рубрики: BLOCH OSCILLATOR
SUPERLATTICES
PHOTOCURRENT
TRANSPORT
FREQUENCY
FIELD
RECTIFIERS
EMISSION
CHAOS
GAAS
Аннотация: We describe an effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow-gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Alekseev K. N., Ponomarev A. V.
Заглавие : Optical chaos in nonlinear photonic crystals
Место публикации : JETP Letters. - 2002. - Vol. 75, Is. 4. - P.174-178. - ISSN 0021-3640, DOI 10.1134/1.1475717
Примечания : Cited References: 34
Предметные рубрики: POLED LITHIUM-NIOBATE
3RD-HARMONIC GENERATION
WAVE-GUIDES
SUPERLATTICES
CHI((2))
Аннотация: We examine the spatial evolution of lightwaves in a nonlinear photonic crystal with a quadratic nonlinearity, when a second harmonic and a sum-frequency generation are simultaneously quasi-phase-matched. We find the conditions for a transition to Hamiltonian chaos for different amplitudes of lightwaves at the crystal boundary. (C) 2002 MAIK "Nauka/ Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Alekseev K. N., Kusmartsev F. V.
Заглавие : Pendulum limit, chaos and phase-locking in the dynamics of ac-driven semiconductor superlattices
Место публикации : Phys. Lett. A: ELSEVIER SCIENCE BV, 2002. - Vol. 305, Is. 5. - P281-288. - ISSN 0375-9601, DOI 10.1016/S0375-9601(02)01420-2
Примечания : Cited References: 60
Предметные рубрики: STRANGE NONCHAOTIC ATTRACTORS
DC VOLTAGE GENERATION
JOSEPHSON-JUNCTIONS
GAAS/ALAS SUPERLATTICE
BLOCH OSCILLATIONS
TERAHERTZ RADIATION
ELECTRIC-FIELD
THZ RADIATION
FREQUENCY
TRANSPORT
Ключевые слова (''Своб.индексиров.''): semiconductor superlattice--pendulum--chaos--phase-locking--josephson junction--chaos--josephson junction--pendulum--phase-locking--semiconductor superlattice--analytic method--analytical parameters--article--dynamics--electric potential--semiconductor--temperature
Аннотация: We describe a limiting case when nonlinear dynamics of an ac-driven semiconductor superlattice in the miniband transport regime is governed by a periodically forced and damped pendulum equations. We find analytically the conditions for a transition to chaos. With increasing temperature the chaos disappears. We also discuss fractional do voltage states in a superlattice originating from phase-locked states of the pendulum. (C) 2002 Elsevier Science B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chernozatonskii L. A., Sorokin P. B.
Заглавие : Electronic superlattices and waveguides based on graphene: structures, properties and applications
Коллективы :
Разночтения заглавия :авие SCOPUS: Electronic superlattices and waveguides based on graphene: Structures, properties and applications
Место публикации : Phys. Status Solidi B. - Vol. 245, Is. 10. - P.2086-2089. - ISSN 0370-1972, DOI 10.1002/pssb.200879578
Примечания : Cited References: 21. - We are grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for the possibility of using a cluster computer for quantum-chemical calculations, to I.V. Stankevich, L. Biro and J. Bruning for fruitful discussions. The geometry of all presented structures was visualized by ChemCraft software (http://www.chemcraftprog.com). This work was supported by the Russian Foundation for Basic Research (project no. 08-02-01096).
Предметные рубрики: PSEUDOPOTENTIALS
GAS
Аннотация: The new class of quasi-2D superlattices based on graphene with periodically adsorbed hydrogen pairs was proposed. The ab initio DFT method was used for optimization of the atomic geometry and electronic structure of propose structures. It was found that the superlattices band gap decreases nonmonotonically with distance between hydrogen pairs. Based on these results we hope that the graphene superlattices can be promising candidates for various nanotechnological applications especially as elements in nanoelectronic devices. (C) 2008 WILEY-VCH Verlag GmBH & Co. KGaA, Weinheim
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chernozatonskii L. A., Sorokin P. B., Bruning J. W.
Заглавие : Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms
Место публикации : Appl. Phys. Lett. - 2007. - Vol. 91, Is. 18. - Ст.183103. - ISSN 0003-6951, DOI 10.1063/1.2800889
Примечания : Cited References: 24
Предметные рубрики: CARBON
GAS
Ключевые слова (''Своб.индексиров.''): electronic properties--energy gap--graphite--hydrogen--semiconductor materials--superlattices--electronic spectra--graphene sheets--quasi-two-dimensional heterostructures--semiconducting nanostructures--nanostructured materials
Аннотация: It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the formation of 2HG-SL changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with n, but with nonzero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of zigzag strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. (C) 2007 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zharkov S. M., Zhigalov V. S., Kveglis L. I., Lisitsa Y. V., Renskaya K. V., Frolov G. I.
Заглавие : Cluster structure and superlattices in Co and Fe films
Место публикации : JETP Letters. - 1997. - Vol. 65, Is. 12. - P.915-918. - ISSN 0021-3640, DOI 10.1134/1.567449
Примечания : Cited References: 9
Аннотация: The process of dendritic crystallization of Co and Fe films is investigated. Electron-diffraction methods show that fractal growth of dendrites in Co and Fe films proceeds by multiple twinning of the elements of a nanostructure consisting of different clusters with close-packing. The formation of superstructures is explained by a shell model of a cluster structure forming nanocrystallites. (C) 1997 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Diez E., Gomez-Alcala R., Dominguez-Adame F., Sanchez A., Berman G. P.
Заглавие : Coherent carrier dynamics in semiconductor superlattices
Место публикации : Phys. Lett. A. - 1998. - Vol. 240, Is. 1-2. - P.109-111. - ISSN 0375-9601, DOI 10.1016/S0375-9601(98)00023-1
Примечания : Cited References: 7
Предметные рубрики: RABI OSCILLATIONS
Аннотация: We investigate the coherent dynamics of carriers in semiconductor superlattices driven by ac-dc electric fields. We solve numerically the time-dependent effective-mass equation for the envelope function. We find that carriers undergo Rabi oscillations when the driving frequency is close to the separation between minibands. (C) 1998 Elsevier Science B.V.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Ignatchenko V.A., Tsikalov D.S.
Заглавие : Combined effects of 2D and 3D inhomogeneities on high-frequency susceptibility of superlattices
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Уральское отделение РАН
Место публикации : IV Euro-Asian Symposium "Trends in MAGnetism" Nanospintronics (EASTMAG-2010). School for young scientist "Spintronics": June 28 - Lule 2, 2010"Book of abstracts. - Ekaterinburg, 2010. - P.327
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Ignatchenko V. A., Tsikalov D. S.
Заглавие : Combined Effects of 2D and 3D Inhomogeneities on the Dynamic Susceptibility of Superlattices
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", Russian Acad Sci, Inst Metal Phys
Место публикации : TRENDS IN MAGNETISM. - STAFA-ZURICH: TRANS TECH PUBLICATIONS LTD, 2011. - Vol. 168-169. - С. 97-100. - (Solid State Phenomena). - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.168-169.97
Примечания : Cited Reference Count: 10
Предметные рубрики: Materials Science, Multidisciplinary
Physics, Condensed Matter
Ключевые слова (''Своб.индексиров.''): waves--superlattices--inhomogeneities--dynamic susceptibility--dos
Аннотация: The dynamic susceptibility and the one-dimensional density of states (DOS) of an initially sinusoidal superlattice (SL) with simultaneous presence of two-dimensional (2D) phase inhomogeneities that simulate the deformations of the interfaces between the SL's layers and three-dimensional (3D) amplitude inhomogeneities of the layer material of the SL were investigated. An analytical expression for the averaged Green's function of the sinusoidal SL with 2D phase inhomogeneities was obtained in the Bourret approximation. It was shown that the effect of increasing asymmetry of heights of the dynamic susceptibility peaks at the edge of the Brillouin zone of the SL, which was found in [6] at increasing the rms fluctuations of 2D inhomogeneities, also takes place at increasing the correlation wave number of such inhomogeneities. It was also shown that The increase of the tins fluctuations of 3D amplitude inhomogeneities in the superlattice with 2D phase inhomogeneities leads to the suppression of the asymmetry effect and to the decrease of the depth of the DOS gap.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smirnov, Mikhail, Roginskii, Evgenii, Savin, Aleksandr, Oreshonkov A. S., Pankin, Dmitrii
Заглавие : Density-functional study of the Si/SiO2 interfaces in short-period superlattices: Vibrational states and Raman spectra
Колич.характеристики :18 с
Место публикации : Photonics. - 2023. - Vol. 10, Is. 8. - Ст.902. - ISSN 23046732 (eISSN), DOI 10.3390/photonics10080902
Примечания : Cited References: 61. - The study was supported by grants from the Russian Science Foundation (project No. 22-22-20021) and the Saint-Petersburg Science Center (project No. 32/2022), using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State UniversityThe study was performed using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. The authors thank Konstantin Smirnov for his valuable advice. The calculations were also performed in part using the facilities of the JSCC supercomputer center at RAS and the Konstantinov computational center at the Ioffe Institute
Аннотация: Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces.
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