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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Eremin E. V., Gudim I. A., Temerov V. L., Smolyakov D. A., Molokeev M. S.
Заглавие : Comparing the magnetic and magnetoelectric properties of the SmFe3(BO3)4 ferroborate single crystals grown using different solvents
Коллективы : Russian Foundation for Basic Research (RFBR) [18-02-00696_a]; RFBR, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [18-42-240011 p_a]
Место публикации : J. Cryst. Growth. - 2019. - Vol. 518. - P.1-4. - ISSN 0022-0248, DOI 10.1016/j.jcrysgro.2019.04.017. - ISSN 1873-5002(eISSN)
Примечания : Cited References: 17. - This study was supported by the Russian Foundation for Basic Research (RFBR) according to the research projects No. 18-02-00696_a and RFBR, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project No. 18-42-240011 p_a.
Предметные рубрики: POLARIZATION
FEATURES
Ключевые слова (''Своб.индексиров.''): impurities--growth from solutions--single crystal growth--borates--ferroelectric materials--magnetic materials
Аннотация: SmFe3(BO3)4 single crystals have been grown from the bismuth trimolybdate and lithium tungstate-based melt–solutions. Samarium ferroborate single crystals were grown first from the lithium–tungstate flux. The magnetic and magnetoelectric properties of the synthesized crystals have been compared. It is shown that the SmFe3(BO3)4 ferroborate grown from the bismuth trimolybdate-based melt–solution contains impurities of Bi3+ ions (∼5% at.), which replace Sm3+ ions, while the SmFe3(BO3)4, ferroborate grown from the lithium tungstate-based melt–solution contains minor or zero amounts of such impurities. The magnetoelectric and magnetodielectric effects with the Bi3+ admixture appeared 1.5× stronger than in SmFe3(BO3)4; this is probably due to twinning.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Togushova Yu. N., Dolgov, O., V
Заглавие : Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth
Коллективы : Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
Место публикации : Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст.075008. - ISSN 0953-2048, DOI 10.1088/1361-6668/abff6f. - ISSN 1361-6668(eISSN)
Примечания : Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007.
Предметные рубрики: ORDER-PARAMETER
IMPURITIES
SUPERCONDUCTORS
STATES
MODEL
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Efremov D. V., Korshunov M. M., Dolgov O. V., Golubov A. A., Hirschfeld P. J.
Заглавие : Disorder-induced transition between s(+/-) and s(++) states in two-band superconductors
Разночтения заглавия :авие SCOPUS: Disorder-induced transition between sВ± and s++ states in two-band superconductors
Место публикации : Phys. Rev. B: AMER PHYSICAL SOC, 2011. - Vol. 84, Is. 18. - Ст.180512. - ISSN 1098-0121, DOI 10.1103/PhysRevB.84.180512
Примечания : Cited References: 31. - The authors are grateful to S.-L. Drechsler, P. Fulde, I. I. Mazin, V. Mishra, and D. J. Scalapino for useful discussions. The present work was partially supported by the DFG Priority Programme SPP1458 (D.V.E.), Dutch FOM(A.A.G.), DOEDE-FG02-05ER46236 (P.J.H. and M.M.K.), and RFBR 09-02-00127, Presidium of RAS program N5.7, FCP GK P891, and GK 16.740.12.0731, and President of Russia MK-1683.2010.2 (M.M.K.). P.J.H. and M.M.K. are grateful for the support of the Kavli Institute for Theoretical Physics and the Stanford Institute for Materials & Energy Science during the writing of this work.
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTIVITY
IMPURITIES
DENSITY
Аннотация: We have reexamined the problem of disorder in two-band superconductors, and shown, within the framework of the T-matrix approximation, that the suppression of T-c can be described by a single parameter depending on the intraband and interband impurity scattering rates. T-c is shown to be more robust against nonmagnetic impurities than would be predicted in the trivial extension of Abrikosov-Gor'kov theory. We find a disorder-induced transition from the s(+/-) state to a gapless and then to a fully gapped s(++) state, controlled by a single parameter-the sign of the average coupling constant (lambda). We argue that this transition has strong implications for experiments.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Dolgov O. V., Korshunov M. M., Golubov A. A., Efremov D. V.
Заглавие : Does magnetic scattering always suppress superconducting transition?
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.I2.5. - P.125. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : We acknowledge partial support by RFBR (Grant RFBR 16-02-00098)
Ключевые слова (''Своб.индексиров.''): unconventional superconductivity--impurities, pnictides --multiband systems
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Beletskii V. V., Velikanov D. A., Volkov N. V., Yurkin G. Yu.
Заглавие : Effect of cobalt impurity ions on the magnetic and electrical properties of iron monosilicide crystals
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 112, Is. 2. - P303-309. - ISSN 1063-7761, DOI 10.1134/S1063776111010146
Примечания : Cited References: 23
Предметные рубрики: GAP FORMATION
FESI
Ключевые слова (''Своб.индексиров.''): concentration dependence--electrical property--energy structures--experimental data--experimental investigations--field dependence--impurity ions--kondo models--magnetic and electrical properties--si crystals--cobalt--crystal impurities--crystals--magnetic susceptibility--electric properties
Аннотация: The results of experimental investigations of Fe1 - x Co (x) Si crystals in the impurity limit with x = 0.001, 0.005, and 0.01 are reported. The temperature and field dependences of the magnetic susceptibility have been studied. According to the experimental data, the introduction of cobalt impurity leads to a change in the energy structure, which is most pronounced in a change in the electrical properties. The temperature, field, and concentration dependences of the resistivity have been measured. The results have been interpreted in the framework of the Kondo model.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aleksandrova I. P., Bartolome J., Falvello L. R., Torres J. M., Sukhovskii A. A.
Заглавие : Effect of impurities on the successive phase transitions in (Cs1-xRbx)(2)ZnI4 compounds
Разночтения заглавия :авие SCOPUS: Effect of impurities on the successive phase transitions in (Cs1-xRbx)2ZnI4 compounds
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 2002. - Vol. 14, Is. 49. - P.13623-13634. - ISSN 0953-8984, DOI 10.1088/0953-8984/14/49/316
Примечания : Cited References: 27
Предметные рубрики: X-RAY
CS2ZNI4
SYSTEM
HEAT
Ключевые слова (''Своб.индексиров.''): phase transitions--point defects--specific heat--temperature--x ray diffraction analysis--zinc compounds--lock-in transition--nuclear quadrupole resonance--single crystals
Аннотация: The heat capacity, nuclear quadrupole resonance (NQR) and x-ray diffraction of (Cs1-xRbx)(2)ZnI4 single crystals have been measured, for x = 0, 0.001, 0.005, 0.01, 0.025 and 0.05. The normal to incommensurate (N-Inc) phase transition at T-I, the incommensurate to commensurate (Inc-C) lock-in transition at T-L and the structural commensurate monoclinic to triclinic transition at T-LT, observed in the parent compound (x = 0), takes place for x = 0, 0.001, 0.005 and 0.01. For x = 0.025 only T-I and T-L are detected, while for x = 0.05 no transitions were observable. The values of T-I and T-L increase with x while T-LT decreases and disappears at the concentration x = 0.025. The effect of defects, besides modifying the transition temperatures, is that of broadening and lowering the heat capacity anomaly at the lock-in transition until its total quenching for x = 0.05. No observable hysteresis is detected in this transition. NQR and x-ray diffraction data show the Inc-C transition up to the highest concentration. We conclude that this phenomenology is caused by weak interaction of the incommensurate modulation with point defects even in the region close to the Inc-C transition.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Shustin M. S.
Заглавие : Effect of intersite repulsion on the correlation functions and thermodynamics of an Ising chain with annealed magnetic disorder
Место публикации : Bull. Russ. Acad. Sci. Phys.: Allerton Press, 2016. - Vol. 80, Is. 11. - P.1335-1337. - ISSN 10628738 (ISSN), DOI 10.3103/S1062873816110290
Примечания : Cited References: 6. - This work was supported by the Russian Foundation for Basic Research, project nos. 13-02-00073, 14-02-31237, and 15-42-04372.
Ключевые слова (''Своб.индексиров.''): chains--magnetic susceptibility--temperature distribution--thermodynamics--transfer matrix method--correlation function--equilibrium behavior--equilibrium distributions--non-magnetic impurities--quantum phase transitions--repulsion parameter--temperature dependence--transfer matrix technique--phase transitions
Аннотация: An exact solution for a model describing the equilibrium behavior of an ensemble of Ising chains with nonmagnetic intersite repulsion of nearest neighbors and an equilibrium distribution of nonmagnetic impurities is obtained using the transfer matrix technique. The possibility of exciting quantum phase transitions using the intersite repulsion parameter in a system is demonstrated. Proximity to the critical points of these transitions has a substantial effect on the temperature dependence of a system’s magnetic susceptibility. © 2016, Allerton Press, Inc.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Shanidze, Lev, Bondarev I. A., Baron F. A., Lukyanenko A. V., Yakovlev I. A., Volochaev M. N., Volkov N. V.
Заглавие : Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
Место публикации : Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст.2100459. - ISSN 1862-6300, DOI 10.1002/pssa.202100459. - ISSN 1862-6319(eISSN)
Примечания : Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886
Предметные рубрики: NANOSTRUCTURES
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Semenok D. V., Troyan I. A., Sadakov A. V., Zhou D., Galasso M., Kvashnin A. G., Ivanova A. G., Kruglov I. A., Bykov A. A., Terent'ev K. Yu., Cherepakhin A. V., Sobolevskiy O. A., Pervakov K. S., Seregin A. Y., Helm T., Forster T., Grockowiak A. D., Tozer S. W., Nakamoto Y., Shimizu K., Pudalov V. M., Lyubutin I. S., Oganov A. R.
Заглавие : Effect of magnetic impurities on superconductivity in LaH10
Место публикации : Adv. Mater. - 2022. - Vol. 34, Is. 42. - Ст.2204038. - ISSN 09359648 (ISSN), DOI 10.1002/adma.202204038. - ISSN 15214095 (eISSN)
Примечания : Cited References: 106. - In situ X-ray diffraction experiments at high pressure were performed on SPring-8, station BL10XU, Sayo, Japan (proposal No. 2020A0576). This work was supported by JSPS KAKENHI Grant Number 20H05644. Low-pressure studies were carried out on a synchrotron source of the Kurchatov institute (KISI-Kurchatov), station RKFM. The high-pressure experiments were supported by the Ministry of Science and Higher Education of the Russian Federation within the state assignment of the FSRC Crystallography and Photonics of the RAS. I.A.T. was supported by the Russian Science Foundation, project No. 22-12-00163. A.R.O. thanks the Russian Science Foundation (grant 19-72-30043). D.V.S. thanks the Russian Foundation for Basic Research (project 20-32-90099). I.A.K. thanks the Russian Science Foundation (grant No. 21-73-10261) for the financial support of the anharmonic phonon density of states calculations and molecular dynamics simulations. SEM, XRF, and XRD studies of the initial alloys were performed using the equipment of the Shared Research Center FSRC Crystallography and Photonics of the RAS. I.A.T. and A.G.I. acknowledge the use of the facilities of the Center for Collective Use “Accelerator Center for Neutron Research of the Structure of Substance and Nuclear Medicine” of the INR RAS for high-pressure cell preparation. The research used resources of the LPI Shared Facility Center. V.M.P acknowledge the support of the state assignment of the Ministry of Science and Higher Education of the Russian Federation (Project No. 0023-2019-0005) and A.V.S. and O.A.S. acknowledge the support of the Russian Science Foundation, grant 22-22-00570. K.S.P. thanks the Russian Foundation for Basic Research (project 19-02-00888). I.A.K. thanks the Russian Science Foundation (grant No. 19-73-00237) for the financial support of the development of T-USPEX method and anharmonic phonon density of states calculation algorithm. S.W.T was supported by NSF Cooperative Agreement No. DMR-1157490/1644779 and by the State of Florida. A.D.G. was supported by T.H. and T.F. funding. The authors acknowledge the support of the HLD at HZDR, member of the European Magnetic Field Laboratory (EMFL). The authors also thank Igor Grishin (Skoltech) for proofreading the manuscript, and Dr. C. Tantardini (University of Tromsø) for calculations using the virtual crystal approximation, and Dr. E. Talantsev (IMP RAS) for useful discussions
Аннотация: Polyhydrides are a novel class of superconducting materials with extremely high critical parameters, which is very promising for sensor applications. On the other hand, a complete experimental study of the best so far known superconductor, lanthanum superhydride LaH10, encounters a serious complication because of the large upper critical magnetic field HC2(0), exceeding 120–160 T. It is found that partial replacement of La atoms by magnetic Nd atoms results in significant suppression of superconductivity in LaH10: each at% of Nd causes a decrease in TC by 10–11 K, helping to control the critical parameters of this compound. Strong pulsed magnetic fields up to 68 T are used to study the Hall effect, magnetoresistance, and the magnetic phase diagram of ternary metal polyhydrides for the first time. Surprisingly, (La,Nd)H10 demonstrates completely linear HC2(T) ∝ |T – TC|, which calls into question the applicability of the Werthamer–Helfand–Hohenberg model for polyhydrides. The suppression of superconductivity in LaH10 by magnetic Nd atoms and the robustness of TC with respect to nonmagnetic impurities (e.g., Y, Al, C) under Anderson's theorem gives new experimental evidence of the isotropic (s-wave) character of conventional electron–phonon pairing in lanthanum decahydride.
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