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Effect of chemical ordering on optical properties of Fe3Si epitaxial films / I. Tarasov [et al.] // EPJ Web Conf. - 2018. - Vol. 185: Moscow International Symposium on Magnetism (MISM 2017). - Ст. 03014, DOI 10.1051/epjconf/201818503014. - Cited References: 10. - The reported study was funded by Russian Foundation for Basic Research, oG vernment of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects oN . 16 -42-243060, 16 -42-243035 and the President of the Russia Federation Program (SP-3382.2016.3 ), RFBR (Grant s oN . 16 -32-00291 and 17-42-190308) . eW also thank Solovyov L.A. for help in XRD analysis.
Рубрики:
Magnetic Nanostructures and Low Dimensional Magnetism
Аннотация: Optical characteristics (electron energy loss function, optical conductivity σ, permittivity ε, refractive index n, extinction coefficient k, and absorption coefficient α) of a 30 nm thick epitaxial Fe3Si iron silicide films grown at different silicon substrate temperature (26, 100, 200, 300 ˚C) were determined within E = 0.74–6.46 eV photon energy range using spectroscopic ellipsometry technique. The experimental data are compared to the optical characteristics calculated in the framework of the density functional theory using the GGA–PBE approximation. Variations of the optical characteristics spectra are discussed from the point of view of chemical ordering of DO3 type crystal structure. It is asserted that the electron energy-loss function, optical conductivity and extinction coefficient of the Fe3Si iron silicide films undergo noticeable changes in different spectral ranges over the whole spectrum between 0.74 and 6.46 eV due to variation in the chemical order. Information on the effect of chemical ordering on the optical properties obtained here allows one to carry out quick qualitative analysis of Fe3Si film crystal quality during the synthesis procedures by ellipsometry method in situ.

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Держатели документа:
Federal Research Center KSC Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
National University of Science and Technology MISiS, Moscow, 11999, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Popov, Z.; Visotin, M. A.; Высотин, Максим Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Moscow International Symposium on Magnetism(7 ; 2017 ; Jul. ; Moscow)
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    Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure / A. S. Tarasov [et al.] // Semicond. Sci. Technol. - 2019. - Vol. 34, Is. 3. - Ст. 035024, DOI 10.1088/1361-6641/ab0327. - Cited References: 56. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project. 18-42-243022 and supported in part by the Russian Foundation for Basic Research by project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 "Nanostructures: physics, chemistry, biology, basics of technologies" . - ISSN 0268-1242. - ISSN 1361-6641
   Перевод заглавия: Спин-зависимая электрическая экстракция дырок из низколегированного p-Si через интерфейсные состояния в структуре Fe3Si/p-Si

РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
ALLOYS
Кл.слова (ненормированные):
spin accumulation -- interface states -- hybrid structures -- Hanle effect -- iron silicide
Аннотация: Spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM). Electrical characterization of a prepared Fe3Si/p-Si diode allowed the determination of possible reasons for the pronounced spin signal. Analysis of the forward bias I-V curve revealed a Schottky barrier at the Fe3Si/p-Si interface with a height of φBp = 0.57 eV. Then, using impedance spectroscopy, we observed interface states localized in the band gap of silicon with energy of E LS = 40 meV. Such states most probably cause the observed spin signal. We believe that in our experiment, spin-dependent hole extraction was performed via the interface states resulting in the minority spin accumulation in the silicon valence band. The observed effect paves the way to the development of different spintronic devices based on FM/SC structures without dielectric tunneling barriers.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Baron, F. A.; Барон, Филипп Алексеевич; Volkov, N. V.; Волков, Никита Валентинович; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [18-42-243022]; Russian Foundation for Basic Research [18-32-00035]; Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences [II.8.70]; Fundamental research program of the Presidium of the RAS [32]
}
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Magnetocapacitance, magnetoelasticity, and magnetopiezoelectric effect in HoFe3(BO3)4 / L. S. Kolodyazhnaya [et al.] // Low Temp. Phys. - 2018. - Vol. 44, Is. 12. - P. 1341-1347, DOI 10.1063/1.5078631. - Cited References: 18 . - ISSN 1063-777X. - ISSN 1090-6517

РУБ Physics, Applied

Аннотация: The main components of the tensor of the moduli of elasticity and the piezomodulus have been measured in monocrystals of the ferroborate HoFe3(BO3)4. The spin-dependent contributions to sound velocity, dielectric permeability, and piezoelectric response in the antiferromagnetic state were studied. The parameters of magnetoelectric and magnetoelastic interactions in an easy-plane magnetic-ordering phase have been defined. A phenomenological interpretation of observed effects is given.

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Публикация на русском языке Магнитоемкость, магнитоупругость и магнитопьезоэлектрический эффект в HoFe3(BO3)4 [Текст] / М. П. Колодяжная [и др.] // Физ. низких температур. - 2018. - Т. 44 № 12. - С. 1712-1720

Держатели документа:
Natl Acad Sci Ukraine, Verkin Inst Low Temp Phys & Engn, Pr Nauki 47, UA-61103 Kharkov, Ukraine.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Akad Gorodok 50, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Kolodyazhnaya, L. S.; Zvyagina, G. A.; Bilych, I. V.; Zhekov, K. P.; Burma, N. G.; Fil', V. D.; Gudim, I. A.; Гудим, Ирина Анатольевна
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Val'kov, V. V.
Renormalization of triplet populations of a spin dimer in zero magnetic field with quantum transport / V. V. Val'kov, S. V. Aksenov // Low Temp. Phys. - 2019. - Vol. 45, Is. 2 : 22nd Ural International Winter School on the Physics of Semiconductors (Feb 20-23, 2018, Alapayevsk, RUSSIA). - P. 165-175, DOI 10.1063/1.5086406. - Cited References: 20. - This work was performed with the support of the Program for Fundamental Research of the Presidium of the Russian Academy of Sciences, No. 32, "Nanostructures: physics, chemistry, biology, foundations of technology", the Russian Fund for Basic Research (grants #16-02-00073, #18-32-00443), the Government of Krasnoyarsk Krai, the Krasnoyarsk Regional Fund for Science within the scientific projects: "Connected Majorana fermions in nanomaterials with strong electron correlations and quantum transport of electrons in systems based on them" (No. 17-42-240441) and "Manifestation of Coulomb interactions and the effects of limited geometry in properties of topological regional states of nanostructures from spin-orbital interaction" (No. 18-42-243017). S.A. expresses his gratitude for a grant of the President of the Russian Federation MK-3722.2018.2. . - ISSN 1063-777X. - ISSN 1090-6517

РУБ Physics, Applied
Рубрики:
SINGLE-MOLECULE
Аннотация: Based on the nonequilibrium Keldysh technique in the atomic representation, the effect of inducing a varied population of magnetic states of a spin dimer interacting with electrons transported through a system in a zero magnetic field was studied. In order to find the filling numbers of the quantum states of the system under the strong nonequilibrium condition, a system of kinetic equations was derived and solved by the method of nonequilibrium diagram technique for Hubbard operators. Numerical analysis of these equations made it possible to reveal nonequilibrium renormalizations when accounting for strong spin-fermion correlations.

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Публикация на русском языке Вальков, Валерий Владимирович. Ренормировки заселенностей триплетных состояний спинового димера в нулевом магнитном поле при квантовом транспорте [Текст] / В. В. Вальков, С. В. Аксенов // Физ. низких температур / чл. прогр. ком. В. В. Вальков. - 2019. - Т. 45 Вып. 2. - С. 192-203 : 19 – 24 февраля 2018 г. : гопрограмма и тезисы докладов / чл. прогр. ком. В. В. Вальков

Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Fed Res Ctr,Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Вальков, Валерий Владимирович; Program for Fundamental Research of the Presidium of the Russian Academy of Sciences [32]; Russian Fund for Basic Research [16-02-00073, 18-32-00443]; Government of Krasnoyarsk Krai; Krasnoyarsk Regional Fund for Science [17-42-240441, 18-42-243017]; Russian Federation [MK-3722.2018.2]; Ural International Winter School on the Physics of Semiconductors(22nd ; Feb 20-23, 2018 ; Alapayevsk, Russia)
}
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    Yurkin, G. Yu.
    Magnetic Properties of Fe1-xCoxSi Single Crystals at Low Co Impurity Concentrations / G. Y. Yurkin, G. S. Patrin, S. A. Yarikov // J. Sib. Fed. Univ. Math. Phys. - 2019. - Vol. 12, Is. 1. - P. 94-99 ; Журнал СФУ. Математика и физика, DOI 10.17516/1997-1397-2019-12-1-94-99. - Cited References: 17 . - ISSN 1997-1397. - ISSN 2313-6022
   Перевод заглавия: Магнитные свойства монокристаллов Fe1-x CoxSi при малой концентрации примеси Co
Кл.слова (ненормированные):
Co impurities -- iron silicide -- superparamagnetism -- силицид железа -- примесь Co -- суперпарамагнетизм
Аннотация: Magnetostatic properties of FeSi and Fe0,98Co0,02Si single crystals have been studied. It has been found that the temperature and field dependences of the magnetization of monocrystal FeSi are strongly affected by introduction of a small amount of Co (2 %). A description of the results were provided by a model accounting for the formation of superparamagnetic iron clusters, as well as Fe-Co complexes. It is assumed that Fe-Co complexes form a ferromagnetic phase, which is approximately 0.6% of the Fe0,98Co0,02Si sample weight.
В работе представлено исследование магнитостатических характеристик образцов FeSi и Fe0,98Co0,02Si. Обнаружено, что внесение небольшого количества примести Co(2%) значительно влияет на температурные и полевые зависимости намагниченности монокристалла FeSi. Результаты обработаны в рамках модели, учитывающей образование суперпарамагнитных кластеров железа, а также комплексов Fe-Co. Предполагается, что комплексы Fe-Co образуют ферромагнитную фазу, которая составляет примерно 0,6 % от массы образца Fe0,98Co0,02Si.

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Держатели документа:
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Svobodny 79, Krasnoyarsk 660041, Russia.
Kirensky Inst Phys SB RAS, Akademgorodok 50-38, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Yarikov, Stanislav A.; Яриков, Станислав Алексеевич; Юркин, Глеб Юрьевич

}
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Diagram Approach to the Problem of the Normal Phase Properties of the Spin-Polaron Ensemble in Cuprate Superconductors / V. V. Val'kov [et al.] // J. Low Temp. Phys. - 2019. - Vol. 197, Is. 1-2. - P. 34-43, DOI 10.1007/s10909-019-02211-9. - Cited References: 29. - The work was supported by the program of the Presidium of the Russian Academy of Sciences No. 12 “Fundamental problems of high-temperature superconductivity,” the Russian Foundation for Basic Research (RFBR) (Projects Nos. 18-02-00837 and 19-02-00509) and partly by the Government of Krasnoyarsk Region and the Krasnoyarsk Region Science and Technology Support Fund (Projects Nos. 18-42-243002 “Manifestation of spin-nematic correlations in spectral characteristics of electronic structure and their influence on practical properties of cuprate superconductors,” 18-42-243018 “Contact phenomena and magnetic disorder in the problem of the formation and detection of topological edge states in semiconductor nanostructures,” and 18-42-240014 “Single-orbit effective model of an ensemble of spin-polaron quasiparticles in the problem of describing the intermediate state and pseudogap behavior of cuprate superconductors”). . - ISSN 0022-2291
Кл.слова (ненормированные):
Cuprate superconductors -- Unconventional superconductivity -- Spin-charge correlations
Аннотация: Taking into account the real crystalline structure of the CuO 2 plane within the spin-fermion model and using the diagram technique, the spin-polaron concept of the fermionic excitations in cuprate superconductors is implemented. It is shown that an account of the on-site scattering processes leads to considerable binding energy of the spin-polaron quasiparticles. An account of the two-site spin-fermion scattering processes results in the energy spectrum and spectral properties of the spin-polaron quasiparticles which agree well with experimental data on cuprate superconductors.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation
Vereshchagin Institute for High Pressure Physics, Troitsk, Moscow, 108840, Russian Federation

Доп.точки доступа:
Val'kov, V. V.; Вальков, Валерий Владимирович; Mitskan, V. A.; Мицкан, Виталий Александрович; Korovushkin, M. M.; Коровушкин, Максим Михайлович; Dzebisashvili, D. M.; Дзебисашвили, Дмитрий Михайлович; Barabanov, A. F.
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Specific features of Nd3+ Kramers doublets' splitting in an antiferromagnetic crystal NdFe3(BO3)4 in an external magnetic field / S. L. Gnatchenko [et al.] // Low Temp. Phys. - 2019. - Vol. 45, Is. 8. - P. 928-933, DOI 10.1063/1.5116545. - Cited References: 27. - A. V. Malakhovskii is grateful for the financial support provided by the RFBR Grant No. 19-02-00034. . - ISSN 1063-777X
Аннотация: The optical absorption spectra of an easy-plane NdFe3(BO3)4 antiferromagnet are measured in the region of the 4I9/2 → 2H11/2 transition of the of Nd3+ ion. The study is performed in the 2-35 K temperature range, in external magnetic fields of up to 65 kOe directed both along the C3 axis and the basal plane of the crystal. The splitting values of the Nd3+ excited states in the exchange field of the Fe3+ subsystem and the g-factors of the 2H11/2 multiplet states are determined. The nontrivial dependences of the splitting of some Nd3+ states in a magnetic field indicate that these states have anisotropic Fe-Nd exchange interaction. © 2019 Author(s).

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Публикация на русском языке Особенности расщепления крамерсовых дублетов Nd3+ в антиферромагнитном кристалле NdFe3(BO3)4 во внешнем магнитном поле [Текст] / С. Л. Гнатченко [и др.] // Физ. низких температур. - 2019. - Т. 45 Вып. 8. - С. 1084-1091 ; Fiz. Nizk. Temp.

Держатели документа:
B. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine, 47 Nauky Ave., Kharkiv, 61103, Ukraine
Kirensky Institute of Physics, Federal Research Center of Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, 50 Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Gnatchenko, S. L.; Kachur, I. S.; Kurnosov, V. S.; Piryatinskaya, V. G.; Malakhovskii, A. V.; Малаховский, Александр Валентинович; Gudim, I. A.; Гудим, Ирина Анатольевна
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Formation of the magnetic subsystems in antiferromagnetic NiO nanoparticles using the data of magnetic measurements in fields up to 250 kOe / S. I. Popkov [et al.] // J. Magn. Magn. Mater. - 2019. - Vol. 483. - P. 21-26, DOI 10.1016/j.jmmm.2019.03.004. - Cited References: 76. - We are grateful S.V. Semenov and A.A. Dubrovskiy for their help, S.V. Komogortsev and A.D. Balaev for fruitful discussions, and M.N. Volochaev for the TEM measurements. The TEM investigations were carried out on the equipment of the Center of Collective Use of the Federal Research Center “Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences”. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science, to the research project: «Magnetic reversal of magnetic nanoparticles in strong pulsed magnetic fields - a new approach to the study of dynamic effects associated with the magnetization of magnetic nanoparticles» (project no. 18-42-240012). . - ISSN 0304-8853
Кл.слова (ненормированные):
Antiferromagnetic nanoparticle -- External magnetic field -- Low temperature regions -- Magnetic subsystems -- Magnetically actives -- Magnetization curves -- Paramagnetic subsystems -- Pulsed magnetic fields -- Magnetic bubbles
Аннотация: It is well-known that the fraction of surface atoms and the number of defects in an antiferromagnetic particle increase with a decrease in the particle size to tens of nanometers, which qualitatively changes the properties of the particle. Specifically, in antiferromagnetic nanoparticles, spins in the ferromagnetically ordered planes can partially decompensate; as a result, an antiferromagnetic particle acquires a magnetic moment. As a rule, uncompensated chemical bonds of the surface atoms significantly weaken the exchange coupling with the antiferromagnetic particle core, which can lead to the formation of an additional magnetic subsystem paramagnetic at high temperatures and spin-glass-like in the low-temperature region. The existence of several magnetic subsystems makes it difficult to interpret the magnetic properties of antiferromagnetic nanoparticles. It is shown by the example of NiO nanoparticles with an average size of 8 nm that the correct determination of the contributions of the magnetic subsystems forming in antiferromagnetic nanoparticles requires magnetic measurements in much stronger external magnetic fields than those commonly used in standard experiments (up to 60–90 kOe). An analysis of the magnetization curves obtained in pulsed magnetic fields up to 250 kOe allows one to establish the contributions of the uncompensated particle magnetic moment μun, paramagnetic subsystem, and antiferromagnetic particle core. The μun value obtained for the investigated NiO particles is consistent with the Néel model, in which μun ∼ N1/2 (N is the number of magnetically active atoms in a particle), and thereby points out the existence of defects on the surface and in the bulk of a particle. It is demonstrated that the anomalous behavior of the high-field susceptibility dM/dH of antiferromagnetic NiO nanoparticles, which was observed by many authors, is caused by the existence of a paramagnetic subsystem, rather than by the superantiferromagnetism effect.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences”, Krasnoyarsk, 660036, Russian Federation
Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation

Доп.точки доступа:
Popkov, S. I.; Попков, Сергей Иванович; Krasikov, A. A.; Красиков, Александр Александрович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Kirillov, V. L.; Martyanov, O. N.; Balaev, D. A.; Балаев, Дмитрий Александрович
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Thermoelectric properties of low-cost transparent single wall carbon nanotube thin films obtained by vacuum filtration / I. A. Tambasov [et al.] // Physica E. - 2019. - Vol. 114. - Ст. 113619, DOI 10.1016/j.physe.2019.113619. - Cited References: 53. - The study was carried out by a grant of Russian Science Foundation (project No. 17-72-10079). The electron microscopy examination was carried out at the Center for Collective Use of the Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences (Krasnoyarsk, Russia). V.A.E. and E.D.O. thank RFFI-18-32-00998_mol_a and RFFI-19-02-00859_a projects for support of development of two aqueous phase technique for nanotube separation. . - ISSN 1386-9477
Кл.слова (ненормированные):
Single-wall carbon nanotubes -- Aqueous two-phase extraction -- Semiconducting and metallic SWNTs -- Thin SWNT films -- Thermoelectric properties -- Thermoelectric figure of merit
Аннотация: The dispersions of semiconducting (sc-) and metallic (m-) SWCNTs with purity more than 98 and 86%, correspondingly, were obtained by using the aqueous two-phase extraction method. The unseparated (un-) SWCNTs contained ~3/4 of semiconducting and ~1/4 of metallic nanotubes. Thin films based on unseparated, semiconducting and metallic SWCNTs were prepared by vacuum filtration method. An Atomic Force Microscopy (AFM) and a Transmission Electronic Microscopy (TEM) were used to investigate the thin film microstructure. The thin SWCNT film transmittance was measured in the wavelength range of 300–1500 nm. Thermoelectric properties were carried out in the temperature range up to 200 °C. The largest Seebeck coefficient was observed for thin films based on semiconducting SWCNTs. The maximum value was 98 μV/K under the temperature of 170 °C. The lowest resistivity was 7.5·10−4·Ohm·cm at room temperature for thin un-SWCNT films. The power factor for m-SWCNT and un-SWCNT films was 47 and 213 μW m−1 K−2, correspondingly, at room temperature and 74 and 54 μW m−1 K−2 at 200 °C, respectively. For a thin sc-SWCNT film the maximum power factor was 2.8 μW m−1 K−2 at 160 °C. The un-SWCNT film thermal conductivity coefficient was 5.63 and 3.64 W m−1 K−1 and a thermoelectric figure of merit was 0.011 and 0.016 at temperatures of 23 and 50 °C, respectively.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC Siberian Branch of Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
Krasnoyarsk Scientific Center, Federal Research Center KSC Siberian Branch of Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC Siberian Branch of Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Sciences and Technologies, Krasnoyarsky Rabochy Avenue 31, Krasnoyarsk, 660037, Russian Federation
Siberian Federal University, Svobodny Avenue 79, Krasnoyarsk, 660041, Russian Federation
Prokhorov General Physics Institute of RAS, Vavilov Street 38, Moscow, 119991, Russian Federation
Moscow Institute of Physics and Technology, Institutskiy per.9, Dolgoprudny, Moscow Region, 141701, Russian Federation
Lobachevsky State University of Nizhny Novgorod, Gagarin Avenue 23/3, Nizhny Novgorod, 603950, Russian Federation

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Voronin, A. S.; Evsevskaya, N. P.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Fadeev, Y. V.; Simunin, M. M.; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Smolyarova, T. Е.; Abelian, S. R.; Абелян, Сергей Рубенович; Tambasova, E. V.; Gornakov, M. O.; Горнаков, М. О.; Eremina, V. A.; Kuznetsov, Y. M.; Dorokhin, M. V.; Obraztsova, E. D.
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10.

Val'kov, V. V.
Influence of the Coulomb repulsions on the formation of the superconducting gap of the spin-polaron quasiparticles in cuprates / V. V. Val'kov, M. M. Korovushkin, A. F. Barabanov // J. Low Temp. Phys. - 2019. - Vol. 196, Is. 1-2. - P. 242–252, DOI 10.1007/s10909-018-02120-3. - Cited References: 26. - The work was supported by the program of the Presidium of the Russian Academy of Sciences No. 12 “Fundamental problems of high-temperature superconductivity,” the Russian Foundation for Basic Research (Projects Nos. 16-02-00304 and 18-02-00837) and partly by the Government of Krasnoyarsk Region and the Krasnoyarsk Region Science and Technology Support Fund (Projects Nos. 18-42-243002 “Manifestation of spin-nematic correlations in spectral characteristics of electronic structure and their influence on practical properties of cuprate superconductors” and 18-42-243018 “Contact phenomena and magnetic disorder in the problem of the formation and detection of topological edge states in semiconductor nanostructures”), and the grant of the President of the Russian Federation (Project MK-1398.2017.2). . - ISSN 0022-2291. - ISSN 1573-7357
Кл.слова (ненормированные):
Cuprate superconductors -- Intersite Coulomb interaction -- Spin polarons -- Spin-charge correlations -- Unconventional superconductivity
Аннотация: Taking into account the real crystalline structure of the CuO2 plane and the strong spin-fermion coupling, the influence of the on-site Coulomb repulsion of holes Up and the intersite Coulomb repulsion V2 between holes located at the next-nearest-neighbor oxygen ions on the formation of the superconducting gap with the d-wave symmetry of the order parameter of the spin-polaron quasiparticles is studied. It is shown that the formation of the resulting superconducting gap within the spin-fermion model is caused by three components. The dependence of the narrowing of the superconducting gap on the values Up and V2 is analyzed.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Vereshchagin Institute for High Pressure Physics, Troitsk, Moscow, Russia

Доп.точки доступа:
Korovushkin, M. M.; Коровушкин, Максим Михайлович; Barabanov, A. F.; Вальков, Валерий Владимирович
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