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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Har'kov A. M., Balaev D. A., Gorev M. V., Vorotynov A. M., Sokolov V. V., Pichugin A.
Заглавие : Metal–semiconductor transition in SmxMn1−xS solid solutions
Место публикации : Phys. Status Solidi B. - 2012. - Vol. 249, Is. 4. - P.812-817. - ISSN 0370-1972, DOI 10.1002/pssb.201147327
Примечания : Cited References: 27. - This study was supported by the Russian Foundation for Basic Research project No 09-02-00554_a; No 09-02-92001-NNS_a; No 11-02-98018 r_sibir_a; ADTP "Development of scientific potential of the higher school" No. 2.1.1/11763.
Предметные рубрики: Magnetic-properties
Phase-transition
SmS
Valence
Pressure
Crystal
Lattice
CeRhSb
Ключевые слова (''Своб.индексиров.''): kondo effect--metal-semiconductor transition--semiconductors--variable-valence elements
Аннотация: The electrical resistivity of the SmxMn1−xS (0.15 ≤ x ≤ 0.25) solid solutions in the temperature range of 80–300 K was measured. Minimum and maximum in the temperature dependence of the resistivity were found, respectively, at T = 220 K for x = 0.15 and at T = 100 K for x = 0.2 compounds. This behavior is explained from the result of the mobility-edge movement, the disorder being due to elastic deformation and spin density fluctuations with short-range order. Metal–semiconductor phase transition versus concentration at xc = 0.25 is observed. Resistivity is described by scattering electrons with acoustic phonon mode and with localized manganese spin. From the thermal expansion coefficient the compression of the lattice below the Néel temperature for Sm0.2Mn0.8S is found.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Slabko V. V., Slyusareva E. A., Aleksandrovsky A. S., Tsipotan A. S., Glushkov А. А.
Заглавие : Influence of band-to-band transition on light-controlled self-assembly of semiconductor nanoparticles
Коллективы : International Conference on Coherent and Nonlinear Optics, International Conference on Lasers, Applications, and Technologies
Место публикации : ICONO/LAT 2013 : Advance conference program. - 2013. - Ст.IWS8. - P.67
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Makovetskii G., Demidenko O. F., Galyas A., Yanushkevich K., Aplesnin S. S., Romanova O. B., Ryabinkina L. I.
Заглавие : Magnetic and thermoelectric properties of the Mn1-X Ni (X) S solid solutions
Место публикации : J. Korean Phys. Soc. - 2013. - Vol. 62, Is. 12. - P.2059-2062. - ISSN 0374-4884, DOI 10.3938/jkps.62.2059
Примечания : Cited References: 9. - This study was supported by the Russian Foundation for Basic Research project No. 09-02-92001-NNS_a; No.12-02-90004 Bel_a; No. 12-02-00125_a; No. 11-02-98018 r_sibir_a, F12R-060
Предметные рубрики: NICKEL SULPHIDE
TRANSITION
Ключевые слова (''Своб.индексиров.''): antiferromagnetic materials--semiconductor conductivity--manganese sulphides
Аннотация: The new sulphide Mn1-X Ni (X) S (0X a parts per thousand currency sign 0.1) solid solutions are synthesized. The structural, magnetic, electric and thermoelectric properties of the obtained materials have been studied. The X-ray diffraction analysis has shown that the synthesized Mn1-X Ni (X) S samples have a NaCl-type FCC lattice. The Mn1-X Ni (X) S samples are antiferromagnets with the Neel temperature (T (N) T (N) . The conductivity type change from the hole to the electronic at X 0.05 is revealed on the basis of the thermoelectric power measurements. The resistivity and thermopower behaviors are explained in terms of the impurity subband formation into MnS electron excitation gap.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Loiko V. A., Zyryanov V. Ya., Krakhalev M. N., Konkolovich A. V., Miskevich A. A.
Заглавие : Light passage through the polymer film of liquid crystal droplets with modified boundary conditions
Место публикации : Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2013. - Vol. 16, № 1. - P.185-189
Примечания : This work was performed under the aegis of the Integration Project and supported by the Belarusian Republican Foundation for Fundamental Research, Project No. F12SO-007
Ключевые слова (''Своб.индексиров.''): polymer dispersed liquid crystal--transmittance--scattering--light modulation
Аннотация: A method to analyze coherent transmission coefficients and the small-angle light scattering structure of PDLC layer with homogeneous and inhomogeneous boundary conditions on the droplets surface is discussed. For PDLC films with inhomogeneous boundary conditions at the polymer -- liquid crystal interface, asymmetry of the angular structure of light scattering with respect to the polar angle is revealed. Besides, experimental results on transmittance are presented.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.526-529. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.526. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hybrid structure--mis transition--photoelectric effect--schottky barrier--channel switching--comparative analysis--electron hole pairs--fe films--fe layer--ferromagnetic films--hybrid structure--optical effects--optical radiations--photogeneration--planar geometries--schottky barriers--semiconductor substrate--temperature variation--critical currents--interfaces (materials)--magnetic materials--photoelectricity--schottky barrier diodes--silicon--switching circuits--transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G., Zharkov S. M.
Заглавие : Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry
Место публикации : J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст.123924. - P. - ISSN 0021-8979, DOI 10.1063/1.3600056
Ключевые слова (''Своб.индексиров.''): channel switching--comparative analysis--fe films--fe layer--ferromagnetic films--high temperature--hybrid structure--inversion layer--metal-insulator-semiconductors--negative magneto-resistance--planar geometries--positive magnetoresistance--schottky barriers--semiconductor substrate--temperature variation--weak localization--critical currents--electric resistance--ferromagnetic materials--geometry--magnetic fields--magnetoelectronics--magnetoresistance--metal insulator boundaries--metal insulator transition--mis devices--schottky barrier diodes--silicon--silicon compounds--switching circuits--transport properties--semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Slabko V. V., Tsipotan A. S., Aleksandrovsky A. S.
Заглавие : Resonant light-controlled self-assembly of ordered nanostructures
Коллективы : International Workshop on Theoretical and Computational Nano-Photonics (4th; 26-28 Oct 2011; Bad Honnef, Germany)
Место публикации : Photonics Nanostruct.: Elsevier Science BV, 2012. - Vol. 10, Is. 4. - P.636-643. - ISSN 1569-4410, DOI 10.1016/j.photonics.2012.06.002
Примечания : Cited References: 15. - This work has been supported by the Ministry of Education and Science of Russian Federation (Contract 16.740.11.0150 and Grant 2.1.1/3455), by RAS Projects 29 and 31, by PSB RAS Project 3.9.5, by SB RAS Projects 43 and 101, and by SFU Grant F12.
Ключевые слова (''Своб.индексиров.''): metal nanoparticles--semiconductor nanoparticles--self-assembly--light-induced processes
Аннотация: The possibility of light-controllable formation of heterogeneous nanostructures containing resonant metallic and semiconductor nanoparticles is considered. Interaction energy between light-induced dipole polarization of nanoparticles at modest light intensity can be much more than the thermal motion energy. The configuration of self-assembled nanostructure can be controlled by the frequency and polarization of the light.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Balashov V. V., Korobtsov V .V.
Заглавие : The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier
Коллективы : Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
Место публикации : Appl. Phys. Lett.: American Institute of Physics, 2014. - Vol. 104, Is. 22. - Ст.222406. - ISSN 0003-6951, DOI 10.1063/1.4881715. - ISSN 1077-3118
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043.
Предметные рубрики: MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Tarasov A. S., Ivanenko A. A., Bykova L. E., Nemtsev I. V., Eremin E. V., Yozhikova E. V.
Заглавие : Reversible UV induced metal-semiconductor transition in In2O3 thin films prepared by autowave oxidation
Коллективы : Federal Target Program [14.513.11.0023]; Russian Foundation for Basic Research [14-02-31156]
Место публикации : Semicond. Sci. Technol.: IOP Publishing, 2014. - Vol. 29, Is. 8. - Ст.82001. - ISSN 0268-1242, DOI 10.1088/0268-1242/29/8/082001. - ISSN 1361-6641
Примечания : Cited References: 56. - This work was supported by the Federal Target Program through Contract No 14.513.11.0023; the Russian Foundation for Basic Research, Project No. 14-02-31156.
Предметные рубрики: TRANSPARENT CONDUCTING OXIDES
Ga-DOPED ZnO
LOW-TEMPERATURE
HIGH-PERFORMANCE
SUBSTRATE-TEMPERATURE
INSULATOR-TRANSITION
ROOM-TEMPERATURE
TRANSISTORS
COMBUSTION
PHOTOREDUCTION
Ключевые слова (''Своб.индексиров.''): indium oxide thin films--autowave oxidation--metal-semiconductor transition--uv irradiation--photoreduction
Аннотация: We have prepared thin indium oxide films by the autowave oxidation reaction. Measurements of temperature dependence of resistivity, Hall carrier concentration and Hall mobility have been conducted in the temperature range 5-272 K. Before ultraviolet (UV) irradiation, the indium oxide film had a semiconductor-like temperature dependence of resistivity. and the ratio of rho (5 K)/rho(272 K) was very limited (similar to 1.2). It was found that after UV irradiation of the In2O3 film, the metal-semiconductor transition (MST) was observed at similar to 100 K. To show that this MST is reversible and repeatable, two full cycles of 'absence of MST-presence of MST' have been done using UV irradiation (photoreduction) as the induced mechanism and exposure to an oxygen environment as the reversible mechanism, respectively. MST in transparent conducting oxide (TCO) is possibly associated with the undoped structure of metal oxide, which has some disorder of oxygen vacancies. It was suggested that reversible UV induced metal-semiconductor transition would occur in other TCOs.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Turpanov I. A., Patrin K. G., Alekseichik E. A., Kobyakov A. V., Yushkov V. I.
Заглавие : Magnetic and electrical properties of Co/Ge bilayer films
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: S. G. Ovchinnikov, A. Samardak: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.348-351. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.348. - ISSN 1662-9779
Примечания : Cited References: 8
Ключевые слова (''Своб.индексиров.''): bilayer structure ferromagnetic metal/semiconductor--cobalt--coercivity--germanium interface--magnetization--magnetoresistance--schottky barrier
Аннотация: The magnetic and electrical properties of Co/Ge bilayer films are experimentally studied. It is established that at the Co/Ge interface an intermediate magnetic layer forms. This layer affects the magnetic behavior and magnetoresistive effect in the investigated structures. © (2014) Trans Tech Publications, Switzerland.
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