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Lateral photovoltaic effect in silicon-based hybrid structures under external magnetic field / I. A. Bondarev, M. V. Rautskii, N. V. Volkov [et al.] // Mater. Sci. Semicond. Process. - 2023. - Vol. 167. - Ст. 107786, DOI 10.1016/j.mssp.2023.107786. - Cited References: 32 . - ISSN 1369-8001. - ISSN 1873-4081
Кл.слова (ненормированные):
Lateral photovoltaic effect -- MIS structures -- Interface states -- Schottky field
Аннотация: Charge transport in semiconductor devices is highly sensitive to light, which opens up wide application prospects. The lateral photovoltaic effect (LPE) is widely used in position sensitive detectors due to its high sensitivity to the light spot position. We report on the features of the LPE in silicon-based metal/insulator/semiconductor structures at helium temperatures. To investigate the LPE, Fe/SiO2/p-Si and Mn/SiO2/n-Si structures have been fabricated by molecular beam epitaxy. It has been found by studying the lateral photovoltage that the SiO2/Si interface plays a significant role in transport of photogenerated carriers, mainly via the interface states, which induce electron capture/emission processes at certain temperatures. The value of the photovoltage is likely affected not only by the metallic film thickness, but also by the substrate conductivity type and Schottky barrier. The effect of the magnetic field on the LPE is driven by two mechanisms. The first one is the well-known action of the Lorentz force on photogenerated carriers and the second one is shifting of the interface state energy levels. Basically, the magnetic field suppresses the contribution of the interface states to the LPE, which suggests that the interface-induced transport can be controlled magnetically.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia
Federal Research Center “Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk, 660036, Russia
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, 660041, Russia

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Volkov, N. V.; Волков, Никита Валентинович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Tarasov, A. S.; Тарасов, Антон Сергеевич
}
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Electrosound and asymmetry of the I-V characteristic induced by ultrasound in the RexMn1-xS (Re = Tm, Yb) / S. Aplesnin, M. Sitnikov, O. Romanova [et al.] // Eur. Phys. J. Plus. - 2022. - Vol. 137, Is. 2. - Ст. 226, DOI 10.1140/epjp/s13360-022-02432-0. - Cited References: 46. - This study was supported by the Russian Foundation for Basic Research and the Belarussian Republic Foundation for Basic Research (Project No. 20-52-00005). The investigation ofmicrostructural properties of the sampleswas carried out using equipment's (SEM and TEM) the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center " Krasnoyarsk Science Center SB RAS". The authors are grateful to A.V. Shabanov, senior researcher of the Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, for the scanning electron microscopy investigations . - ISSN 2190-5444

РУБ Physics, Multidisciplinary
Рубрики:
ACOUSTIC CHARGE-TRANSPORT
   WAVES
   SEMICONDUCTOR
   ATTENUATION
Аннотация: A correlation between the temperatures corresponding to the maxima of the sound attenuation and temperature resistance coefficient in the RexMn1-xS solid solutions related to the condensation of electrons and holes has been established. X-ray diffraction, energy-dispersive X-ray spectrum, and scanning electron microscope techniques have been used to investigate the microstructure of the samples. In the Yb0.2Mn0.8S compound, a decrease in the ultrasound attenuation with increasing temperature has been observed. The functional dependences of the electrosound on the ultrasound intensity and carrier type and the change in the electrosound sign with temperature have been established. The asymmetry of the I-V characteristic depending on the ultrasound intensity and the attenuation coefficient depending on the electric field has been found. The nonlinear attenuation of the ultrasound as a function of the intensity has been observed. Model of elastic and inelastic scattering of current carriers by acoustic phonons, deformation interaction is used to explain the asymmetry.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, Maxim; Romanova, O. B.; Романова, Оксана Борисовна; Kharkov, Anton; Begisheva, Olga; Zelenov, Fyodor; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarussian Republic Foundation for Basic Research [20-52-00005]
}
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    Revisiting the BaBiO3 semiconductor photocatalyst: synthesis, characterization, electronic structure, and photocatalytic activity / D. S. Shtarev, A. V. Shtareva, R. Kevorkyants [et al.] // Photochem. Photobiol. Sci. - 2021. - Vol. 20, Is. 9. - P. 1147-1160, DOI 10.1007/s43630-021-00086-y. - Cited References: 48. - We wish to thank the Russian Science Foundation for a Grant (Project No. 19-73-10013) in support of our study. The authors are also grateful to the staff of the following Institutes/Centers for their valuable technical assistance and in providing the needed equipment: (i) the Khabarovsk Innovation and Analytical Center of the Yu. A. Kosygin Institute of Tectonics and Geophysics FEB RAS; and (ii) the Resource Centers of the Research Park at Saint-Petersburg State University, especially the Center for Physical Methods of Surface Investigation and the Nanophotonics Center. One of us (NS) is grateful to the staff of the PhotoGreen Laboratory of the University of Pavia, Italy, for their continued hospitality . - ISSN 1474-905X. - ISSN 1474-9092
   Перевод заглавия: Новый анализ полупроводникового фотокатализатора BaBiO3: синтез, характеристика, электронная структура и фотокаталитическая активность

РУБ Biochemistry & Molecular Biology + Biophysics + Chemistry, Physical
Рубрики:
RHODAMINE-B
   OXIDE
   DRIVEN
   SUPERCONDUCTIVITY
   PSEUDOPOTENTIALS
Кл.слова (ненормированные):
Barium bismuthate -- Visible-light-active photocatalyst -- Photocatalytic activity -- Bandgaps -- Flatband potentials
Аннотация: This article revisits the properties of BaBiO3 examined extensively in the last two decades because of its electronic properties as a superconductor and as a semiconductor photocatalyst. Solid-state syntheses of this bismuthate have often involved BaCO3 as the barium source, which may lead to the formation of BaBiO3/BaCO3 heterostructures that could have an impact on the electronic properties and, more importantly, on the photocatalytic activity of this bismuthate. Accordingly, we synthesized BaBiO3 by a solid-state route to avoid the use of a carbonate; it was characterized by XRD, SEM, and EDX, while elemental mapping characterized the composition and the morphology of the crystalline BaBiO3 and its thin films with respect to structure, optoelectronic, and photocatalytic properties. XPS, periodic DFT calculations, and electrochemical impedance spectroscopy ascertained the electronic and electrical properties, while Raman and DRS spectroscopies assessed the relevant optical properties. The photocatalytic activity was determined via the degradation of phenol in aqueous media. Although some results accorded with earlier studies, the newer electronic structural data on this bismuthate, together with the photocatalytic experiments carried out in the presence of selective radical trapping agents, led to elucidating some of the mechanistic details of the photocatalytic processes that previous views of the BaBiO3 band structure failed to address or clarify. Analytical refinement of the XRD data inferred the as-synthesized BaBiO3 adopted the C2/m symmetry rather than the I2/m structure reported earlier, while Tauc plots from DRS spectra yielded a bandgap of 2.05 eV versus the range of 1.1–2.25 eV reported by others; the corresponding flatband potentials were 1.61 eV (EVB) and − 0.44 eV (ECB). The photocatalytic activity of BaBiO3 was somewhat greater than that of the well-known Evonik P25 TiO2 photocatalyst under comparable experimental conditions.

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Держатели документа:
Far Eastern Fed Univ, Lab Thin Film Technol, Ajax Bay 10, Vladivostok 690922, Russia.
St Petersburg State Univ, Lab Thotoact Nanocomposite Mat, Ulyanovskaya 1, St Petersburg 198504, Russia.
Far Eastern State Transport Univ, Serysheva 47, Khabarovsk 680021, Russia.
Kirensky Inst Phys, Akad Gorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny 79, Krasnoyarsk 660041, Russia.
Univ Pavia, PhotoGreen Lab, Dipartimento Chim, Via Taramelli 12, I-27100 Pavia, Italy.

Доп.точки доступа:
Shtarev, Dmitry S.; Shtareva, Anna, V; Kevorkyants, Ruslan; Molokeev, M. S.; Молокеев, Максим Сергеевич; Serpone, Nick; Russian Science FoundationRussian Science Foundation (RSF) [19-73-10013]
}
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Electrical properties of the polycrystalline BiFe0.95Co0.05O3 films / O. B. Romanova, V. V. Kretinin, S. S. Aplesnin [et al.] // Phys. Solid State. - 2021. - Vol. 63. Is. 6. - P. 897-903, DOI 10.1134/S1063783421060184. - Cited References: 34. - This study was supported by the Russian Foundation for Basic Research and the Belarusian Republican Foundation for Basic Research, project no. 20-52-00005 . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
BiFeO3 THIN-FILMS
   PHASE-SEPARATION
   CRYSTAL
   MODEL
Кл.слова (ненормированные):
semiconductor films -- magnetoresistance -- magnetoimpedance -- magnetization
Аннотация: Semiconductor BiFe0.95Co0.05O3 thin-film compounds have been synthesized by a burst technique. The film surface morphology and the effect of electronic doping via substitution of cobalt ions for trivalent iron on the optical, magnetic, and kinetic properties have been investigated in the temperature range of 77-600 K in magnetic fields of up to 12 kOe. Two electron relaxation channels have been found in the impedance spectrum in the frequency range of 0.1-1000 kHz. The negative magnetoresistance in the anomalous magnetization region and the maximum magnetoimpedance in the vicinity of the surface phase transition have been established. Using the Hall measurements, carrier types dominating in the magnetoresistance and magnetoimpedance effects have been determined. The magnetization anomalies have been explained in the model of superparamagnetic clusters and the magnetoresistance, by the carrier scattering by spin fluctuations.

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Публикация на русском языке Электрофизические свойства поликристаллических пленок BiFe0.95Co0.05O3 [Текст] / О. Б. Романова, В. В. Кретинин, С. С. Аплеснин [и др.] // Физ. тверд. тела. - 2021. - Т. 63 Вып. 6. - С. 721-728

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.
Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS.

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Kretinin, V. V.; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Udod, L. V.; Удод, Любовь Викторовна; Yanushkevich, K. I.; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarusian Republican Foundation for Basic Research [20-52-00005]
}
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Experimental and DFT study of BaLaCuS3: Direct band gap semiconductor / A. S. Oreshonkov, N. O. Azarapin, N. P. Shestakov, S. V. Adichtchev // J. Phys. Chem. Solids. - 2021. - Vol. 148. - Ст. 109670, DOI 10.1016/j.jpcs.2020.109670. - Cited References: 26. - The reported study was funded by RFBR , project numbers: 18-03-00750 , 18-05-00682 and 18-32-20011 . The authors would like to thank Alexey A. Lubin for his studies on SEM. The studies were carried out on the basis of a laboratory of electron and probe microscopy in REC ‘Nanotechnologies’. We are grateful to the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center « Krasnoyarsk Science Center SB RAS » for the provided Bruker Vertex 80v. The experimental part corresponding to Raman measurements was supported by the Ministry of Education and Science of the Russian Federation, grant no AAAA-A17-117052410033-9 . - ISSN 0022-3697
Кл.слова (ненормированные):
Sulphidation -- Semiconductor -- Direct band gap -- Wide band gap -- Solar cell
Аннотация: BaLaCuS3 powder was prepared by sulphidation method. The shape of powder particles is irregular and place in the range of 10–100 μm. The electronic, elastic and vibrational properties were evaluated with the use of DFT method. According to the electronic band structure calculation the BaLaCuS3 is a direct wide band gap semiconductor with Edg = 2.0 eV while the energy of indirect transition is equal to 2.2. eV and it indicates that the BaLaCuS3 is a promising material for efficient underwater solar cells. Calculated compressibility of BaLaCuS3 is found to be identical to germanium and zinc blende modification of zunc sulfide.

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Держатели документа:
Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
School of Engineering and Construction, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Institute of Chemistry, Tyumen State University, Tyumen, 625003, Russian Federation
Institute of Automation and Electrometry, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation

Доп.точки доступа:
Oreshonkov, A. S.; Орешонков, Александр Сергеевич; Azarapin, N. O.; Shestakov, N. P.; Шестаков, Николай Петрович; Adichtchev, S. V.
}
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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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    Phenomenological rule from correlations of conduction/valence band energies and bandgap energies in semiconductor photocatalysts: calcium bismuthates versus strontium bismuthates / D. S. Shtarev, V. K. Ryabchuk, A. V. Rudakova [et al.] // ChemCatChem. - 2020. - Vol. 12, Is. 6. - P. 1551-1555, DOI 10.1002/cctc.201902236. - Cited References: 13. - The research was supported from a grant from the Russian Science Foundation (project No. 19-73-10013). We are very grateful to the staff of the Khabarovsk Innovation and Analytical Center of the Yu. A. Kosygin Institute of Tectonics and Geophysics FEB RAS, and of the Research Center on Nanophotonics and the Center for Physical Methods of Surface Investigation (to Dr. Alexandra Koroleva) of the Research Park at Saint-Petersburg State University for their valuable assistance in carrying out the research and in providing the needed equipment. VKR and AVR acknowledge financial support from a grant by the Saint-Petersburg State University (Pure ID 39054581). One of us (NS) thanks Prof. A. Albini and the staff of the PhotoGreen Laboratory of the University of Pavia for their continued hospitality . - ISSN 1867-3880. - ISSN 1867-3899
   Перевод заглавия: Феноменологическое правило из соотношений энергий проводимости / валентной зоны и энергий запрещенной зоны в полупроводниковых фотокатализаторах: висмутаты кальция против висмутатов стронция

РУБ Chemistry, Physical
Рубрики:
STRUCTURAL-PROPERTIES
Кл.слова (ненормированные):
calcium bismuthates -- strontium bismuthates -- bandgap energies -- semiconductor photocatalysts -- linear correlation of ECB/EVB with Ebg
Аннотация: A number of calcium bismuthates were synthesized (25 to 50 mol% in Ca) and characterized by XRD, SEM, EDX, XPS and DRS techniques; the latter provided an estimate of the bandgap energies (Ebg=2.41 to 3.29 eV) via Tauc plots for indirect transitions, whereas XPS established the potentials (vs NHE) of their respective valence bands (and thus the conduction bands). Linear correlations existed between EVB/ECB and Ebg that when compared with those of strontium bismuthates (reported earlier) showed that differences in energies at Ebg=0 eV are related to the difference in the absolute electronegativities of Ca and Sr, from which the following empirical phenomenological rule is postulated: replacing one alkaline earth metal in bismuthates by another causes the points of intersection of the linear correlations ECB(Ebg) and EVB(Ebg) to be displaced by an amount equal to twice the difference in absolute electronegativities of these metals.

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Держатели документа:
Russian Acad Sci, Yu A Kosygin Inst Tecton & Geophys, Far Eastern Branch, 65 Kim Yu Chen St, Khabarovsk 680063, Russia.
Far Eastern State Transport Univ, 47 Seryshev St, Khabarovsk 680021, Russia.
St Petersburg State Univ, Dept Photon, Ulyanovskaya 1, St Petersburg 198904, Russia.
St Petersburg State Univ, Lab Photoact Nanocomposite Mat, Ulyanovskaya 1, St Petersburg 198904, Russia.
Kirensky Inst Phys, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, 79 Svobodny Pr, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Inst Mat Sci, Khabarovsk Sci Ctr, Far East Branch, 153 Tihookeanskaya St, Khabarovsk 680000, Russia.
Univ Pavia, Dipartimento Chim, PhotoGreen Lab, Via Taramelli 12, I-27100 Pavia, Italy.

Доп.точки доступа:
Shtarev, D. S.; Ryabchuk, V. K.; Rudakova, A. V.; Shtareva, A. V.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Kirichenko, E. A.; Serpone, N.; Russian Science FoundationRussian Science Foundation (RSF) [19-73-10013]; Saint-Petersburg State University [39054581]
}
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Spin accumulation in the Fe3Si/n-Si epitaxial structure and related electric bias effect / A. S. Tarasov, A. V. Luk'yanenko, I. A. Bondarev [et al.] // Tech. Phys. Lett. - 2020. - Vol. 46, Is. 7. - P. 665-668, DOI 10.1134/S1063785020070135. - Cited References: 17. - This study was supported by the Russian Foundation for Basic Research, the Government of Krasnoyarsk krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities (project no. 18-42-243022), and a Grant of the Government of the Russian Federation for Creation of World Level Laboratories (agreement no. 075-15-2019-1886) . - ISSN 1063-7850. - ISSN 1090-6533

РУБ Physics, Applied
Рубрики:
TRANSPORT
Кл.слова (ненормированные):
iron silicide -- ferromagnet/semiconductor structures -- Hanle effect -- spin accumulation -- electric spin injection
Аннотация: The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.

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Публикация на русском языке Эффект спиновой аккумуляции в эпитаксиальной структуре Fe3Si/n-Si и влияние на него электрического смещения [Текст] / А. С. Тарасов, А. В. Лукьяненко, И. А. Бондарев [и др.] // Письма в Журн. техн. физ. - 2020. - Т. 46 № 13. - С. 43-46

Держатели документа:
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Luk'yanenko, A. V.; Лукьяненко, Анна Витальевна; Bondarev, I. A.; Бондарев, Илья Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk krai; Krasnoyarsk Territorial Foundation [18-42-243022]; Grant of the Government of the Russian Federation for Creation of World Level Laboratories [075-15-2019-1886]
}
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Probing proximity effects in the ferromagnetic semiconductor EuO / D. V. Averyanov, A. M. Tokmachev, O. E. Parfenov [et al.] // Appl. Surf. Sci. - 2019. - Vol. 488. - P. 107-114, DOI 10.1016/j.apsusc.2019.05.191. - Cited References: 57. - This work is partially supported by NRC "Kurchatov Institute" (synthesis), the Russian Foundation for Basic Research [grant 19-07-00249] (magnetization measurements), and the Russian Science Foundation [grant 19-19-00009] (transport measurements). The measurements have been carried out using the equipment of the resource centers of electrophysical, laboratory X-ray, and electron microscopy techniques of NRC "Kurchatov Institute". The authors also gratefully acknowledge the beamtime allocation (MA-3167) by the ESRF. . - ISSN 0169-4332. - ISSN 1873-5584

РУБ Chemistry, Physical + Materials Science, Coatings & Films + Physics, Applied + Physics, Condensed Matter
Рубрики:
INTERFACE
   FIELD
   POLARIZATION
   INSULATOR
   SILICON
Кл.слова (ненормированные):
EuO -- Gd -- Ferromagnetism -- Proximity effect
Аннотация: Ferromagnetic insulators are widely employed to induce magnetic phenomena in adjacent layers via proximity effect. This approach could make non-magnetic materials (ranging from silicon to graphene) available for spintronic applications. Eu chalcogenides, EuO in particular, are highly efficient spin generators but suffer from low Curie temperatures. Here, experiments aimed at T-C increase in EuO by its integration with the ferromagnetic metal Gd are reported. The epitaxial bilayers Gd/EuO are synthesized on different substrates and characterized by a combination of diffraction and microscopy techniques. Their magnetic structure - established with magnetization and transport measurements as well as element-selective X-ray magnetic circular dichroism study - comprises coupled magnetic orders of EuO and Gd. EuO is robust against proximity effects - its T-C is still low, increased at most by a few tens of K. Nevertheless, the results encourage further studies of proximity-enhanced ferromagnetism to extend the range of applications of ultrathin layers of EuO in spintronics.

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Держатели документа:
Natl Res Ctr Kurchatov Inst, Kurchatov Sq 1, Moscow 123182, Russia.
ESRF, F-38054 Grenoble, France.

Доп.точки доступа:
Averyanov, D. V.; Tokmachev, Andrey M.; Parfenov, Oleg E.; Karateev, Igor A.; Sokolov, I. S.; Taldenkov, Alexander N.; Platunov, M. S.; Платунов, Михаил Сергеевич; Wilhelm, Fabrice; Rogalev, Andrei; Storchak, V. G.; NRC "Kurchatov Institute"; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [19-07-00249]; Russian Science FoundationRussian Science Foundation (RSF) [19-19-00009]
}
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10.

Val'kov, V. V.
Ground-State Fermion Parity and Caloric Properties of a Superconducting Nanowire / V. V. Val'kov, V. A. Mitskan, M. S. Shustin // J. Exp. Theor. Phys. - 2019. - Vol. 129, Is. 3. - P. 426-437, DOI 10.1134/S1063776119080144. - Cited References: 74. - This work was supported by the Russian Foundation for Basic Research (project nos. 16-02-00073, 18-32-00443, 18-42-243017, 18-42-243018), the Government of the Krasnoyarsk Kray, the Krasnoyarsk Kray Science Foundation within the scientific projects “Contact Phenomena and Magnetic Disorder in the Formation and Detection of Topologically Protected Edge States in Semiconductor Nanostructures” (project no. 18-42-243018), “Manifestation of Coulomb Interactions and Bounded-Geometry Effects in the Properties of Topological Edge States of Nanostructures with Spin–Orbit Interactions” (project no. 18-42-243017). One of us (Sh. M. S.) thanks the Council for Grants of the Russian President (project nos. MK-3594.2018.2 and MK-3722.2018.2). . - ISSN 1063-7761
Кл.слова (ненормированные):
Nanowires -- Quantum interference devices -- Semiconductor insulator boundaries -- Topology
Аннотация: Abstract: The ground-state structure and fermion parity have been determined for a semiconductor nano-wire with a strong Rashba spin–orbit interaction and proximity-induced superconductivity placed in an external magnetic field under periodic boundary conditions. Allowance for the open boundaries is shown to cause the topologically nontrivial parameter region to be partitioned into a set of subregions with a different ground-state fermionic parity. This peculiarity is related to the emergence of edge modes with nonmonotonically changing excitation energies in the system as its parameters change. At the quantum transition point, at which the ground-state fermionic parity changes, the edge-mode energy is zero. The magneto- and electrocaloric effects are shown to be effective characteristics that allow the series of quantum transitions in an open nanowire to be identified experimentally. These effects at low temperatures exhibit an anomalous behavior in the parameter region for which topologically stable Majorana modes are realized in long nanowires. © 2019, Pleiades Publishing, Inc.

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Публикация на русском языке

Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences, AkademgorodokKrasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Mitskan, V. A.; Мицкан, Виталий Александрович; Shustin, M. S.; Шустин, Максим Сергеевич; Вальков, Валерий Владимирович
}
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11.

IR-range photoinduced diode effect in the manganese-substituted bismuth ferrite films / S. S. Aplesnin [et al.] // Semicond. Sci. Technol. - 2019. - Vol. 34, Is. 9. - Ст. 095007, DOI 10.1088/1361-6641/ab3160. - Cited References: 45. - The reported study was funded by RFBR according to the research project No 18-52-00009 Bel_ a; No 18-32-00079 mol_ a and Belarusian Foundation project No F18R-084. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science No 18-42-240001 r_ a, to the research project: "Inversion of the sign of the components of the magnetoelectric tensor on the temperature in films of bismuth garnet ferrite replaced by neodymium". This work is part of the research program the state order No 3.5743.2017/6.7. . - ISSN 0268-1242. - ISSN 1361-6641

РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
POOLE-FRENKEL CONDUCTION
BIFEO3 FILMS
LIGHT
Кл.слова (ненормированные):
multiferroic -- films -- diode effect -- polarization -- I-V characteristics -- optical absorption
Аннотация: The photoinduced diode effect has been found in BiMnxFe1-xO3 (0 < X < 0.15) films in the near-infrared and violet spectral ranges in a wide temperature interval. The dependences of the diode effect on temperature, wavelength, and illumination power have been established. The mechanism of the ferroelectric diode has been determined using its I-V characteristics at different illumination powers, optical spectra, far-infrared absorption spectra, and electric polarization hysteresis. The interplay between the photodiode effect and conductivity mechanism has been elucidated. The model of strong Coulomb potential fluctuations and quantum well asymmetry caused by the electric polarization in the film and difference between the times of carrier thermalization and recombination of electrons and holes is proposed.
В пленках феррита висмута BiMnxFe1-xO3 (0< x < 0.15) обнаружен фотоиндуцированный диодный эффект в ближней инфракрасной и фиолетовой областях спектра в широкой области температур. Определена зависимость диодного эффекта от температуры, длины волны, мощности освещения. Механизм ферроэлектрического диода определяется из вольт-амперных характеристик при разных интенсивностях освещения, оптических спектров и спектров поглощения в дальней ИК области, гистерезиса электрической поляризации. Устанавливается связь фотодиодного эффекта с механизмом проводимости. Предложена модель сильных флуктуаций кулоновского потенциала, асимметрия квантовых ям в результате наличия электрической поляризации в пленке и отличие времен термолизации носителей тока и рекомбинации электронов и дырок.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk, Russia.
Siberian Fed Univ, Krasnoyarsk, Russia.
Sci Pract Mat Res Ctr NAS Belarus, Minsk, BELARUS.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Kretinin, V. V.; Masyugin, A. N.; Romanova, O. B.; Романова, Оксана Борисовна; Sitnikov, M. N.; Begisheva, O. B.; Galyas, A., I; Demidenko, O. F.; Yanushkevich, K., I; RFBR [18-52-00009 Bel_ a, 18-32-00079 mol_ a]; Belarusian Foundation [F18R-084]; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-240001 r_ a]; [3.5743.2017/6.7]
}
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12.

    Engineering of K3YSi2O7 to Tune Photoluminescence with Selected Activators and Site Occupancy / J. Qiao [et al.] // Chem. Mater. - 2019. - Vol. 31, Is. 18. - P. 7770-7778, DOI 10.1021/acs.chemmater.9b02990. - Cited References: 48. - This work was supported by the National Natural Science Foundation of China (Nos. 51722202, 51972118 and 51572023), Natural Science Foundations of Beijing (2172036), Fundamental Research Funds for the Central Universities (FRF-TP-18-002C1), and Guangdong Provincial Science & Technology Project (2018A050506004). This work was also supported by the National Science Foundation, Ceramics Program (No. 1911372), and the computational resources were provided by the Extreme Science and Engineering Discovery Environment (XSEDE) supported by the National Science Foundation (No. ACI-1548562). . - ISSN 0897-4756
   Перевод заглавия: Производство K3YSi2O7 для настройки фотолюминесценции с выбранными активаторами и заселением позиций
Кл.слова (ненормированные):
Citrus fruits -- Density functional theory -- Doping (additives) -- Energy gap -- Gallium alloys -- III-V semiconductors -- Indium alloys -- Light -- Light emitting diodes -- Metal ions -- Phosphors -- Photoluminescence -- Rare earths -- Rietveld refinement -- Semiconductor alloys
Аннотация: The luminescence of rare earth ions (Eu2+, Ce3+, and Eu3+)-doped inorganic solids is attractive for the screening of phosphors applied in solid-state lighting and displays and significant to probe the occupied crystallographic sites in the lattice also offering new routes to photoluminescence tuning. Here, we report on the discovery of the Eu- and Ce-activated K3YSi2O7 phosphors. K3YSi2O7:Eu is effectively excited by 450 nm InGaN blue light-emitting diodes (LEDs) and displays an orange-red emission originated from characteristic transitions of both Eu2+ and Eu3+, while K3YSi2O7:Ce3+ shows green emission upon 394 nm near-ultraviolet (NUV) light excitation. Rietveld refinement verifies the successful doping of the activators, and density functional theory (DFT) calculations further support that Eu2+ occupies both K1 and Y2 crystallographic sites, while Ce3+ and Eu3+ only occupy the Y2 site; hence, the broad-band red emission of Eu2+ are attributed to a small DFT band gap (3.69 eV) of K3YSi2O7 host and a selective occupancy of Eu2+ in a highly distorted K1 site and a high crystal field splitting around Y2 sites. The white LEDs device utilizing orange-red-emitting K3YSi2O7:Eu and green-emitting K3YSi2O7:Ce3+ exhibits an excellent CRI of 90.1 at a correlated color temperature of 4523 K. Our work aims at bridging multivalent Eu2+/Eu3+ and Ce3+ site occupancy in the same host to realize photoluminescence tuning and especially exposes new ways to explore new phosphors with multicolor emission pumped by blue and NUV light for white LEDs.

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Держатели документа:
School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China
Department of Nanoengineering, University of California, San Diego, 9500 Gilman Drive, San Diego, CA 92093, United States
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation
National Synchrotron Radiation Research Center, Hsinchu, 300, Taiwan
State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, 510641, China

Доп.точки доступа:
Qiao, J.; Amachraa, M.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Chuang, Y. -C.; Ong, S. P.; Zhang, Q.; Xia, Z.
}
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13.

    Aliovalent substitution toward reinforced structural rigidity in Ce3+-doped garnet phosphors featuring improved performance / T. Hu [et al.] // J. Mater. Chem. C. - 2019. - Vol. 7, Is. 46. - P. 14594-14600, DOI 10.1039/c9tc05354a. - Cited References: 38. - This work was supported by the National Natural Science Foundation of China (No. 51722202 and 51972118), the Guangdong Provincial Science & Technology Project (2018A050506004) and the Fundamental Research Funds for the Central Universities (D2190980). . - ISSN 2050-7534
   Перевод заглавия: Алиовалентное замещение с целью усиления структурной жесткости в люминофорных гранатах, легированных Ce3 + и имеющих улучшенные характеристики
Кл.слова (ненормированные):
Color -- Deterioration -- Efficiency -- Gallium alloys -- Garnets -- III-V semiconductors -- Indium alloys -- Photoluminescence -- Reinforcement -- Rigidity -- Semiconductor alloys -- Thermal Engineering -- Thermodynamic stability
Аннотация: Highly efficient phosphors with thermal stability and color-tunable emission are required for the fabrication of phosphor-converted white light-emitting diodes (pc-WLEDs). Currently developed engineering strategies are generally successful in photoluminescence tuning but, unfortunately, suffer severe deterioration in emission intensity/efficiency and/or thermal stability. Herein, an efficient aliovalent substitution strategy toward reinforced structural rigidity is proposed and demonstrated experimentally. By incorporating Be2+ ion into the garnet-type Lu2SrAl4SiO12:Ce3+ phosphor, the phosphor shows enhanced internal/external quantum efficiency, from 79.2%/26.7% to 84.5%/32.9%, photoluminescence tuning from green (peaking at ∼512 nm) to yellow (peaking at ∼552 nm), and zero thermal quenching, even up to 200 °C. The Be2+ substitution at the Al2/Si2 site enables stable and rigid local surroundings around the Ce3+ activator, which is responsible for the unprecedented performance. In addition, high-quality warm WLED devices with a luminous efficiency of 158.1 lm W-1, correlated color temperature of 3858 K and high color rendering index of 81.7, are obtained by combining Lu2SrAl4SiO12:Ce3+,Be2+ as the yellow emitter, CaAlSiN3:Eu2+ as the red emitter and a blue-emitting InGaN chip. These findings highlight a new strategy for performance optimization of LED phosphors by selecting rigid covalent compounds with further reinforced structural rigidity via aliovalent substitution.

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Держатели документа:
State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, 510641, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation

Доп.точки доступа:
Hu, T.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Xia, Z.; Zhang, Q.
}
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14.

    Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure / A. S. Tarasov [et al.] // Semicond. Sci. Technol. - 2019. - Vol. 34, Is. 3. - Ст. 035024, DOI 10.1088/1361-6641/ab0327. - Cited References: 56. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project. 18-42-243022 and supported in part by the Russian Foundation for Basic Research by project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 "Nanostructures: physics, chemistry, biology, basics of technologies" . - ISSN 0268-1242. - ISSN 1361-6641
   Перевод заглавия: Спин-зависимая электрическая экстракция дырок из низколегированного p-Si через интерфейсные состояния в структуре Fe3Si/p-Si

РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
ALLOYS
Кл.слова (ненормированные):
spin accumulation -- interface states -- hybrid structures -- Hanle effect -- iron silicide
Аннотация: Spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM). Electrical characterization of a prepared Fe3Si/p-Si diode allowed the determination of possible reasons for the pronounced spin signal. Analysis of the forward bias I-V curve revealed a Schottky barrier at the Fe3Si/p-Si interface with a height of φBp = 0.57 eV. Then, using impedance spectroscopy, we observed interface states localized in the band gap of silicon with energy of E LS = 40 meV. Such states most probably cause the observed spin signal. We believe that in our experiment, spin-dependent hole extraction was performed via the interface states resulting in the minority spin accumulation in the silicon valence band. The observed effect paves the way to the development of different spintronic devices based on FM/SC structures without dielectric tunneling barriers.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Baron, F. A.; Барон, Филипп Алексеевич; Volkov, N. V.; Волков, Никита Валентинович; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [18-42-243022]; Russian Foundation for Basic Research [18-32-00035]; Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences [II.8.70]; Fundamental research program of the Presidium of the RAS [32]
}
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15.

Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states / D. A. Smolyakov [et al.] // Thin Solid Films. - 2019. - Vol. 671. - P. 18-21, DOI 10.1016/j.tsf.2018.12.026. - Cited References: 15. - This study was supported by the Russian Foundation for Basic Research , project no. 18-32-00035 and supported in part by the Russian Foundation for Basic Research , Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243022, and the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences , project II.8.70, and the Presidium of the Russian Academy of Sciences , Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies». . - ISSN 0040-6090
Кл.слова (ненормированные):
Magnetoimpedance -- Spintronics -- Metal/insulator/semiconductor structures -- Nanosized semiconductors
Аннотация: This article presents the results of a study of the transport properties of metal/insulator/semiconductor (MIS) hybrid structures in alternating current (ac) mode. We prepared a series of samples with different layers of metal, insulator, and semiconductor. We prepared a series of samples with different layers of metal, insulator and semiconductor. Ferromagnetic Fe and non-magnetic Cu and Mn were chosen as metals, the insulators were SiO2 and Al2O3, and n- and p-type Si substrates were used as semiconductors. Temperature dependence of the real part of the impedance showed peculiar peaks below 40К for different combinations of metals, insulators and semiconductors. For all samples the effect of the magnetic field on the transport properties was studied. At low temperatures, the magnetic field shifts peaks toward higher temperatures. Metal magnetic state does not significantly affect this phenomenon. Changing the type of the insulator and its thickness also did not cause any significant effect. However, the effect was observed for samples with different composition. Moreover, the type of conductivity of the substrate, as well as the type of metal, determines the value of magnetoimpedance. The main role in the magnetoimpedance effect is played by recharge of the energy states localized at the insulator/semiconductor interface. This mechanism allows obtaining a MI effect even in “nonmagnetic” MIS structures; magnetoimpedance can be either positive or negative, depending on temperature and frequency. We suggest that the observed ac magnetotransport phenomena could be used for creating magnetic field sensors, working on new principles.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Masyugin, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Bondarev, I. A.; Бондарев, Илья Александрович; Kosyrev, N. N.; Косырев, Николай Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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16.

Effect of the Semiconductor Spacer on Positive Exchange Bias in the CoNi/Si/FeNi Three-Layer Structure / G. S. Patrin [et al.] // JETP Letters. - 2019. - Vol. 109, Is. 5. - P. 320-324, DOI 10.1134/S0021364019050126. - Cited References: 26. - This work was supported by the Russian Foundation for Basic Research (project no. 18-02-00161-a). . - ISSN 0021-3640. - ISSN 1090-6487
Рубрики:
MEDIA
Аннотация: Films consisting of a hard magnetic ferromagnet CoNi and a soft magnetic ferromagnet FeNi interacting through a nonmagnetic Si semiconductor spacer are experimentally studied. The temperature and field dependences of the magnetic properties of film structures with different silicon thicknesses are examined. It is found that the multilayer structure has the properties inherent in magnetic springs and exhibits positive exchange bias as a function of the silicon thickness.

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Публикация на русском языке Влияние полупроводниковой прослойки на эффект положительного обменного смещения в трехслойной структуре CoNi/Si/FeNi [Текст] / Г. С. Патрин [и др.] // Письма в ЖЭТФ. - 2019. - Т. 109 Вып. 5-6. - С. 325-330

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Fed Res Ctr KSC, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Yushkov, V. I.; Юшков, Василий Иванович; Kobyakov, A. V.; Кобяков, Александр Васильевич; Patrin, K. G.; Yurkin, G. Yu.; Zhivaya, Ya A.; Russian Foundation for Basic Research [18-02-00161-a]
}
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17.

The influence of the semiconductor layer on the magnetic properties in a three-layer structure CoNi/Si/FeNi / A. V. Kobyakov [et al.] // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 1. - Ст. C.P30. - P. 319. - Cited References: 2. - These studies are conducted with financial support from the Russian Foundation for Basic Research (grant # 18-02-00161-a) . - ISBN 978-5-9500855-7-4

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Kobyakov, A. V.; Кобяков, Александр Васильевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Yushkov, V. I.; Юшков, Василий Иванович; Yarikov, S. A.; Яриков, Станислав Алексеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhivaya, Ya. A.; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
Нет сведений об экземплярах (Источник в БД не найден)
}
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18.

    The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect / A. V. Kobyakov [et al.] // J. Phys. Conf. Ser. - 2019. - Vol. 1389, Is. 1. - Ст. 012028, DOI 10.1088/1742-6596/1389/1/012028. - Cited References: 13. - These studies are conducted with financial support from the Russian Foundation for Basic Research (grant No.18-02-00161-a). . - ISSN 1742-6588. - ISSN 1742-6596
   Перевод заглавия: Роль полупроводникового слоя в структуре пленок обменного смещения CoNi / Si / FeNi / Si с эффектом спиновой пружины
Аннотация: CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the temperature greater than 100K.

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Держатели документа:
Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russia
L.V. Kirensky Institute of Physics of Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, 660036, Russia

Доп.точки доступа:
Kobyakov, A. V.; Кобяков, Александр Васильевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Yushkov, V. I.; Юшков, Василий Иванович; Yarikov, S. A.; Яриков, Станислав Алексеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhivaya, Ya. A.; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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19.

    CsCu5Se3: a copper-rich ternary chalcogenide semiconductor with nearly direct band gap for photovoltaic application / Z. Xia [et al.] // Chem. Mater. - 2018. - Vol. 30, Is. 3. - P. 1121-1126, DOI 10.1021/acs.chemmater.7b05104. - Cited References: 35. - The present work was supported by the National Natural Science Foundation of China (Grants 51722202, 91622125, 51572023, 51672023, 11774239, and U1530401), and Natural Science Foundation of Beijing (Grant 2172036). K.R.P. recognizes that this work was made possible by support from the National Science Foundation (Awards DMR-1608218 and DMR-1307698). X.Z. and S.H.W. acknowledge the support from National Key R&D Program of China (Grant 2016YFB0700700). . - ISSN 0897-4756
   Перевод заглавия: CsCu5Se3: богатый медью тройной халькогенидный полупроводник с почти прямой полосой пропускания для фотовольтаического применения
Кл.слова (ненормированные):
Sulfur compounds
Аннотация: Discovery of new semiconductor candidates with suitable band gaps is a challenge for optoelectronic application. A facile solvothermal synthesis of a new ternary chalcogenide semiconductor CsCu5Se3 is reported. The telluride CsCu5Te3 is also predicted to be stable. CsCu5Se3 is isostructural with CsCu5S3 (space group Pmma). The band gap calculations of these chalcogenide semiconductors using hybrid density functional theory indicate nearly direct band gaps, and their values (about 1.4 eV) were confirmed by the optical absorption spectroscopy. These alkali metal copper chalcogenides are interesting examples of copper-rich structures which are commonly associated with favorable photovoltaic application.

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Держатели документа:
Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, China
Department of Chemistry, Tsinghua University, Beijing, China
College of Electronic Science and Technology, Shenzhen University, Guangdong, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, Nantes, Cedex, France
Beijing Computational Science Research Center, Beijing, China
Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, United States

Доп.точки доступа:
Xia, Z.; Fang, H.; Zhang, X.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Gautier, R.; Yan, Q.; Wei, S. -H.; Poeppelmeier, K. R.
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20.

The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films / S. S. Aplesnin [et al.] // Semicond. Sci. Technol. - 2018. - Vol. 33, Is. 8. - Ст. 085006, DOI 10.1088/1361-6641/aace44. - Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project No 18-52-00009 Bel_a; No 18-32-00079 mol_a; No 18-42-240001 r_a; the state order No 3.5743.2017/6.7. . - ISSN 0268-1242. - ISSN 1361-6641

РУБ Engineering, Electrical & Electronic + Materials Science,
Рубрики:
NEUTRON-SCATTERING
   SURFACE-STATES
   MNTE
   CONDUCTIVITY
   MECHANISM
Кл.слова (ненормированные):
polycrystalline films -- magnetoresistance -- impedance -- polaron -- magnetic -- properties -- thermoelectric
Аннотация: The correlation between the dc and ac electrical resistance and the structural, magnetic, and thermoelectric properties of polycrystalline MnSe1−X Te Х (0.3 ≤ X ≤ 0.4) manganese chalcogenide films in the temperature range of 80–400 K has been investigated. Inhomogeneous electronic states and transitions between them accompanied by structural lattice deformations have been found at temperatures including the Neel temperature region. The magnetic susceptibility maximum above the Neel temperature in a magnetic field of 8.6 kOe has been observed. Temperature ranges of the coexistence of two types of electrically inhomogeneous states have been established by impedance spectroscopy in the frequency range of 0.1–1000 kHz and the change of the hopping conductivity for diffusion one accompanied by the magnetic susceptibility minimum has been found. The magnetoresistance in magnetic fields of up to 12 kОе has been established. It has been revealed that the thermopower and magnetoresistance change its sign upon heating. The experimental data are explained using a spin polaron model with the localization of polarons and formation of the electron phase-separation. The alternation of magnetoresistance in sign is attributed to the ferromagnetic orbital ordering of electrons and the negative magnetoresistance is explained by suppression of spin fluctuations in a magnetic field.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarskii Rabochi Ave 31, Krasnoyarsk 660014, Russia.
Sci Pract Mat Res Ctr NAS Belarus, P Brovki Str 19, Minsk 220072, BELARUS.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Romanova, O. B.; Романова, Оксана Борисовна; Sitnikov, M. N.; Kretinin, V. V.; Galyas, A., I; Yanushkevich, K., I; Russian Foundation for Basic Research (RFBR) [18-52-00009 Bel_a, 18-32-00079 mol_a, 18-42-240001 r_a]; [3.5743.2017/6.7]
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