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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Udod L. V., Sitnikov M. N., Velikanov D. A., Gorev M. V., Molokeev M. S., Galyas A. I., Yanushkevich K. I.
Заглавие : Magnetic and electrical properties of bismuth cobaltite Bi24(CoBi)O40 with charge ordering
Место публикации : Phys. Solid State. - 2012. - Vol. 54, Is. 10. - P.2005-2014. - ISSN 1063-7834, DOI 10.1134/S106378341210006X
Примечания : Cited References: 22. - This study was supported by the Russian Foundation for Basic Research (project nos. 09-02-92001-NNS_a, 12-02-00125-a, and 11-02-98004-r_sibir'_a)
Предметные рубрики: Thermoelectric-power
Co3O4
Conductivity
Transition
Аннотация: The compound Bi24(CoBi)O40 has been synthesized using the solid-phase reaction method. The temperature and field dependences of the magnetic moment in the temperature range 4 K T 300 K and the temperature dependences of the EPR line width and g-factor at temperatures 80 K T 300 K have been investigated. The electrical resistivity and thermoelectric power have been measured in the temperature range 100 K T 1000 K. The activation energy has been determined and the crossover of the thermoelectric power from the phonon mechanism to the electron mechanism with variations in the temperature has been observed. The thermal expansion coefficient of the samples has been measured in the temperature range 300 K T 1000 K and the qualitative agreement with the temperature behavior of the electrical resistivity has been achieved. The electrical and structural properties of the compound have been explained in the framework of the model of the electronic-structure transition with inclusion of the exchange and Coulomb interactions between electrons and the electron-phonon interaction.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Makovetskii G., Demidenko O. F., Galyas A., Yanushkevich K., Aplesnin S. S., Romanova O. B., Ryabinkina L. I.
Заглавие : Magnetic and thermoelectric properties of the Mn1-X Ni (X) S solid solutions
Место публикации : J. Korean Phys. Soc. - 2013. - Vol. 62, Is. 12. - P.2059-2062. - ISSN 0374-4884, DOI 10.3938/jkps.62.2059
Примечания : Cited References: 9. - This study was supported by the Russian Foundation for Basic Research project No. 09-02-92001-NNS_a; No.12-02-90004 Bel_a; No. 12-02-00125_a; No. 11-02-98018 r_sibir_a, F12R-060
Предметные рубрики: NICKEL SULPHIDE
TRANSITION
Ключевые слова (''Своб.индексиров.''): antiferromagnetic materials--semiconductor conductivity--manganese sulphides
Аннотация: The new sulphide Mn1-X Ni (X) S (0X a parts per thousand currency sign 0.1) solid solutions are synthesized. The structural, magnetic, electric and thermoelectric properties of the obtained materials have been studied. The X-ray diffraction analysis has shown that the synthesized Mn1-X Ni (X) S samples have a NaCl-type FCC lattice. The Mn1-X Ni (X) S samples are antiferromagnets with the Neel temperature (T (N) T (N) . The conductivity type change from the hole to the electronic at X 0.05 is revealed on the basis of the thermoelectric power measurements. The resistivity and thermopower behaviors are explained in terms of the impurity subband formation into MnS electron excitation gap.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Romanova O., Ryabinkina L. I., Demidenko O. F., Makovetskii G., Yanushkevich K. I.
Заглавие : Magnetic and thermoelectric properties of the solid solutions Mn1-XNiXS
Коллективы : Korean Physical Society, Korean Magnetics Society, International Union of Pure and Applied Physics, International conference on magnetism (19; 2012 ; Jul ; 8-13; Busan, Korea/ Bexco, Korea)
Место публикации : The 19th International Conference on Magnetism with Strongly Correlated Electron Systems: book of abstracts. - 2012. - P.209
Аннотация:
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Романова, Оксана Борисовна, Харьков, Анатолий Михайлович, Ситников, Максим Николаевич, Кретинин В. В.
Заглавие : Переход металл-диэлектрик в катион-замещенных соединениях ReхMn1-xS (Re = Gd, Sm, Ho)
Место публикации : Вестник СибГАУ. - Красноярск: СибГАУ, 2015. - Т. 16, № 2. - С. 478-484. - ISSN 1816-9724 (Шифр В22/2015/16/2)
Примечания : Библиогр.: 38. - Работа выполнена при финансовой поддержке РФФИ № 15-42-04099 р_Cибирь_а и государственного задания № 114090470016.
Ключевые слова (''Своб.индексиров.''): сульфиды редкоземельных элементов--проводимость--переход металл-диэлектрик--термоэдс--sulfides of rare-earth elements--conductivity--transition metal-insulator--thermoelectric power
Аннотация: Представлены результаты исследования транспортных свойств катион-замещенных сульфидов RexMn1-xS (Re = Gd, Sm, Ho) с ГЦК-решеткой типа NaCl в области температур 77-1200 К. С увеличением степени катионного замещения в этих соединениях RexMn1-xS (Re = Gd, Sm, Ho) изменяется тип проводимости от полупроводникового до металлического при критической концентрации Х С. Концентрационный переход металл-диэлектрик в системе Gd XMn 1-XS сопровождается уменьшением величины удельного электросопротивления на 12 порядков и коэффициента термоЭДС (α) на два порядка. Катионное замещение в твердых растворах GdxMn1-xS приводит к смене дырочного типа проводимости (α 0), свойственного моносульфиду марганца, на электронный (α 0). Уменьшение величины α с увеличением содержания гадолиния в решетке MnS указывает на то, что Gd действует как донорная примесь. Для Sm 0,2Mn 0,8S обнаружен резкий максимум сопротивления при Т This paper presents the results of a study of the transport properties of cation-substituted sulfides Re XMn 1-XS (Re = = Gd, Sm, Ho) with FCC NaCl type in the temperature range 77-1200 K. With increasing degree of cation substitution in these compounds Re XMn 1- ХS (Re = Gd, Sm, Ho) the conductivity type changes from the semiconductor to the «metal» at the critical concentration X C. The concentration of metal-insulator transition in the system Gd XMn 1-XS is accompanied by a decreasing in the electrical resistivity of value on 12 orders and Seebeck coefficient (α) is on two orders. The cation-substitution in the solid solutions Gd XMn 1-XS leads to p-type conductivity (α 0), as comprising to electronic (α 0) for manganese monosulfide. Decrease of α with increasing gadolinium concentration in the MnS lattice indicates that the Gd acts as a donor impurity. For Sm 0,2Mn0,8S a maximum resistance at T
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Ryabinkina L. I., Sokolov V. V., Pichugin A. Y., Velikanov D. A., Balaev D. A., Galyas A. I., Demidenko O. F., Makovetskii G. I., Yanushkevich K. I.
Заглавие : Magnetic properties and the metal-insulator transition in GdXMn1-XS solid solutions
Коллективы :
Разночтения заглавия :авие SCOPUS: Magnetic properties and the metal-insulator transition in GdX Mn1 - X S solid solutions
Место публикации : Solid State Commun.: PERGAMON-ELSEVIER SCIENCE LTD, 2010. - Vol. 150, Is. 13-14. - P602-604. - ISSN 0038-1098, DOI 10.1016/j.ssc.2009.12.042
Примечания : Cited References: 13. - This study was supported by the Russian Foundation for Basic Research project No. 09-02-00554_a; No. 09-02-92001-NNS_a; No. 08-02-90031 Bel_a and Belarus Foundation for Basic Research project No. F04-182; ADTF "Development of scientific potential of the higher school" No. 2.1.1/401.
Ключевые слова (''Своб.индексиров.''): insulator--metals--crystal growth--phase transitions--insulator--metals--crystal growth--phase transitions--insulator--metals--antiferromagnetic semiconductors--crystal growth--cubic lattice--metal-insulator phase transition--orders of magnitude--p-type--temperature range--thermoelectric properties--thermopowers--antiferromagnetic materials--antiferromagnetism--crystal growth--crystallization--electric properties--gadolinium--grain boundaries--magnetic fields--magnetic properties--manganese--manganese compounds--metal insulator boundaries--metals--semiconductor growth--semiconductor insulator boundaries--sodium chloride--solid solutions--solidification--metal insulator transition
Аннотация: The structural, magnetic, electrical, and thermoelectric properties of GdXMn1-XS (0.01
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : KARYAGIN V. V., LYAPILIN I. I., DYAKIN V. V.
Заглавие : DRAG THERMOELECTRIC-POWER OF A TWO-DIMENSIONAL ELECTRON-GAS IN A GAAS-GAAIAS HETEROSTRUCTURE
Место публикации : SOVIET PHYSICS SEMICONDUCTORS-USSR: AMER INST PHYSICS, 1988. - Vol. 22, Is. 8. - P954-955. - ISSN 0038-5700
Примечания : Cited References: 3
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuzubov A. A., Kovaleva E. A., Popova M. I., Kholtobina A. S., Mikhaleva N. S., Visotin M. A., Fedorov A. S.
Заглавие : DFT investigation of electronic structures and magnetic properties of halides family MeHal3 (Me=Ti, Mo,Zr,Nb, Ru, Hal=Cl,Br,I) one dimensional structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [16-13-00060]; Russian Foundation for Basic Research [RFBR 16-32-60003 mol_a_dk]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.93-96. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.054. - ISSN 1873-4766(eISSN)
Примечания : Cited References:16. - This work was supported by the Russian Science Foundation, Project no. 16-13-00060. N.S.M. thanks the Russian Foundation for Basic Research, project RFBR 16-32-60003 mol_a_dk, for the financial support of ZrIINF3/INF, TiIINF3/INF and NbIINF3/INF electronic structure calculations
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
TOTAL-ENERGY CALCULATIONS
AUGMENTED-WAVE
Ключевые слова (''Своб.индексиров.''): transition metal trihalides--magnetic properties--thermoelectric--conversion--density functional theory
Аннотация: Using DFT GGA calculations, electronic structure and magnetic properties of wide family of transition metal trihalides (TMHal3) (Zr, Ti and Nb iodides, Mo, Ru, Ti and Zr bromides and Ti or Zr chlorides) are investigated. These structures consist of transition metal atoms chains surrounded by halides atoms. Chains are connected to each other by weak interactions. All TMHal3 compounds were found to be conductive along chain axis except of MoBr3 which is indirect gap semiconductor. It was shown that NbI3 and MoBr3 have large magnetic moments on metal atoms (1.17 and 1.81 µB, respectively) but other TMHal3 materials have small or zero magnetic moments. For all structures ferromagnetic and anti-ferromagnetic phases have almost the same energies. The causes of these properties are debated.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Udod L. V., Aplesnin S. S., Sitnikov M. N., Molokeev M. S., Yanushkevich K. I.
Заглавие : Magnetic, dielectric and thermoelectric properties of Bi2Sn1.9Cr0.1O7
Коллективы : Moscow International Symposium on Magnetism, Московский государственный университет им. М.В. Ломоносова, Российский фонд фундаментальных исследований
Место публикации : Moscow International Symposium on Magnetism (MISM-2017): 1-7 July 2017 : book of abstracts. - 2017. - Ст.4PO-I1-27. - P.882 (Шифр 29916280)
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Udod L. V., Sitnikov M. N.
Заглавие : Electronic transition, ferroelectric and thermoelectric properties of bismuth pyrostannate Bi2(Sn0.85Cr0.15)2O7
Место публикации : Ceram. Int. - 2018. - Vol. 44, Is. 2. - P.1614-1620. - ISSN 02728842 (ISSN), DOI 10.1016/j.ceramint.2017.10.082
Примечания : Cited References: 41. - The authors would like to thank M. Molokeev for the clarification of x-ray spectra. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project № 16–52-00045 bel_a.
Ключевые слова (''Своб.индексиров.''): dielectric properties--ferroelectric properties--impedance--thermopower--electrical properties
Аннотация: The ferroelectric properties of bismuth pyrostannate Bi2(Sn0.85Cr0.15)2O7 in the high-temperature region are established. The linear thermal expansion coefficient, electrical resistance, impedance, I−V characteristics, capacitance, loss-angle tangent, charge, and thermopower of the investigated material are measured in the temperature range of 300−700 K at frequencies of 102−106 Hz. Anomalies of the thermal expansion coefficient and hodograph spectrum variation in the region of polymorphic phase transitions are observed. The high resistance and change of the hopping conductivity for the tunnel-emission are found. The hysteresis in the electric field dependence of polarization is established. The change in the thermopower sign with temperature is revealed. The obtained experimental data are explained in the framework of the model of migration polarization by charged chromium ions.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Usenko A., Moskovskikh D., Korotitskiy A., Gorshenkov M., Zakharova E., Fedorov A. S., Parkhomenko Y., Khovaylo V.
Заглавие : Thermoelectric properties and cost optimization of spark plasma sintered n-type Si0.9Ge0.1 - Mg2Si nanocomposites
Место публикации : Scripta Mater. - 2018. - Vol. 146. - P.295-299. - ISSN 13596462 (ISSN), DOI 10.1016/j.scriptamat.2017.12.019
Примечания : Cited References: 28. - This work was supported by Russian Science Foundation (project No. 16-13-00060). Part of the work (structural characterization of the samples) was carried out with financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS”. Partial support by Act 211 Government of the Russian Federation, contract # 02.A03.21.0011, is also acknowledged.
Ключевые слова (''Своб.индексиров.''): cost optimization--lattice thermal conductivity--magnesium silicides--spark plasma--thermo-electric materials--thermoelectric figure of merit--thermoelectric performance--thermoelectric properties
Аннотация: We report on thermoelectric properties of low Ge content n-type Si0.9Ge0.1–Mg2Si nanocomposite. Introduction of the Mg2Si phase into a SiGe matrix resulted in a dramatic drop of the lattice thermal conductivity beyond the previously reported lowest limit for SiGe alloys due to intensification of phonon scattering on SiGe–Mg2Si grain boundaries. For a sample doped with 1 at.% of Mg2Si, the peak value of thermoelectric figure of merit ZT reached ~ 0.8 at 800 °C. Sintered nanocomposites still exhibit high thermoelectric performance while being almost two times cheaper than Si0.8Ge0.2.
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dudnikov V. A., Orlov Yu. S., Kazak N. V., Fedorov A. S., Solov'yov L. A., Vereshchagin S. N., Burkov A. T., Novikov S. V., Gavrilkin S. Yu., Ovchinnikov S. G.
Заглавие : Effect of A-site cation ordering on the thermoelectric properties of the complex cobalt oxides Gd1-xSrxCoO3-δ (x = 0.8 and 0.9)
Место публикации : Ceram. Int. - 2018. - Vol. 44, Is. 9. - P.10299-10305. - ISSN 02728842 (ISSN), DOI 10.1016/j.ceramint.2018.03.037
Примечания : Cited References: 38. - This work was supported by the Russian Science Foundation , project no. 16-13-00060.
Ключевые слова (''Своб.индексиров.''): substituted rare earth cobalt oxides--thermoelectric oxide materials--ordered and disordered states
Аннотация: The effect of substitution of Sr2+ ions for Gd3+ ions on the phase composition, electrical resistivity, thermoelectricity, and thermal conductivity of rare-earth cobalt oxides Gd1-xSrxCoO3-δ (x = 0.8 and 0.9) has been investigated. It has been determined that at the investigated strontium concentrations, the single-phase disordered nonstoichiometric cubic perovskites and superstructures with ordered Sr2+/Gd3+ ions and anion vacancies can be formed. The influence of ordering/disordering of Gd and Sr cations over crystal-lattice A- sites on the thermoelectric figure of merit and sample stability at high temperatures has been studied. The thermoelectric figure of merit of the disordered samples was found to exceed by far the analogous parameter of the ordered samples, which allows us to consider the disordering as a way of improving the thermoelectric parameters. Two contributions to the conductivities are discussed: high-temperature thermoactivation and low-temperatures variable range hopping. The parameters of the Mott electronic structure, including DOS N(εF), hopping energy ε (the energy of hopping conductivity activation), and hopping length Rh, have been estimated.
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12.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Fedorov A. S., Visotin M. A.
Заглавие : Ab initio investigations of nanostructures for their application as nanostructured thermoelectric materials
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Research Institute of Agriculture and Ecology of the Arctic, Siberian Federal Univercity
Место публикации : International school/workshop on actual problems of condensed matter physics: Program. Book of abstracts/ ed. S. G. Ovchinnikov. - Norilsk, 2018. - P.18. - ISBN 978-5-904603-08-3
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Sitnikov M. N., Kretinin V. V., Galyas, A., I, Yanushkevich, K., I
Заглавие : The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films
Коллективы : Russian Foundation for Basic Research (RFBR) [18-52-00009 Bel_a, 18-32-00079 mol_a, 18-42-240001 r_a]; [3.5743.2017/6.7]
Место публикации : Semicond. Sci. Technol. - 2018. - Vol. 33, Is. 8. - Ст.085006. - ISSN 0268-1242, DOI 10.1088/1361-6641/aace44. - ISSN 1361-6641(eISSN)
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project No 18-52-00009 Bel_a; No 18-32-00079 mol_a; No 18-42-240001 r_a; the state order No 3.5743.2017/6.7.
Предметные рубрики: NEUTRON-SCATTERING
SURFACE-STATES
MNTE
CONDUCTIVITY
MECHANISM
Ключевые слова (''Своб.индексиров.''): polycrystalline films--magnetoresistance--impedance--polaron--magnetic--properties--thermoelectric
Аннотация: The correlation between the dc and ac electrical resistance and the structural, magnetic, and thermoelectric properties of polycrystalline MnSe1−X Te Х (0.3 ≤ X ≤ 0.4) manganese chalcogenide films in the temperature range of 80–400 K has been investigated. Inhomogeneous electronic states and transitions between them accompanied by structural lattice deformations have been found at temperatures including the Neel temperature region. The magnetic susceptibility maximum above the Neel temperature in a magnetic field of 8.6 kOe has been observed. Temperature ranges of the coexistence of two types of electrically inhomogeneous states have been established by impedance spectroscopy in the frequency range of 0.1–1000 kHz and the change of the hopping conductivity for diffusion one accompanied by the magnetic susceptibility minimum has been found. The magnetoresistance in magnetic fields of up to 12 kОе has been established. It has been revealed that the thermopower and magnetoresistance change its sign upon heating. The experimental data are explained using a spin polaron model with the localization of polarons and formation of the electron phase-separation. The alternation of magnetoresistance in sign is attributed to the ferromagnetic orbital ordering of electrons and the negative magnetoresistance is explained by suppression of spin fluctuations in a magnetic field.
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14.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tambasov I. A., Voronin A. S., Evsevskaya N. P., Volochaev M. N., Aleksandrovsky A. S., Abelyan S. R., Tambasova E. V.
Заглавие : Thermoelectric properties of optically transparent thin films based on single-walled carbon nanotubes
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов, Институт автоматики и процессов управления ДВО РАН, Дальневосточный федеральный университет
Место публикации : Fourth Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2018): proceedings. - Vladivostok, 2018. - P.88-89
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dudnikov V. A., Orlov Yu. S., Kazak N. V., Fedorov A. S., Solov'yov L. A., Vereshchagin S. N., Burkov A. T., Novikov S. V., Ovchinnikov S. G.
Заглавие : Thermoelectric properties and stability of the Re0.2Sr0.8CoO3-δ (Re = Gd, Dy) complex cobalt oxides in the temperature range of 300‒800 K
Место публикации : Ceram. Int. - 2019. - Vol. 45, Is. 5. - P.5553-5558. - ISSN 02728842 (ISSN) , DOI 10.1016/j.ceramint.2018.12.013
Примечания : Cited References: 38. - This study was supported by the Russian Science Foundation , project no. 16-13-00060 , Russia
Ключевые слова (''Своб.индексиров.''): substituted rare earth cobalt oxides--thermoelectric oxide materials--ordered and disordered states
Аннотация: Temperature dependences of the electrical resistivity and Seebeck coefficient of the Re0.2Sr0.8CoO3‒δ (Re = Gd, Dy) complex cobalt oxides in the temperature range of 300 – 800 K have been investigated. The effects of ordering in the cation and anion sublattices on the thermoelectric properties has been examined and their comparative analysis has been made. It was found that, in the investigated temperature range, the thermoelectric power factor of the ordered compounds significantly exceeds the analogous parameter of the disordered samples. The temperature dependence of the electrical resistivity was shown to obey the activation law. As the temperature increases, the samples undergo a semiconductor-semiconductor electronic transition with a decrease in the activation energy. The thermoelectric properties of all the samples are shown to be stable in the investigated temperature range. The maximum thermoelectric power factor of the ordered Dy0.2Sr0.8CoO2.67 cobaltite at a temperature of 360 K has been obtained; it amounts to 0.23 µW/(cm·K2), which is a good parameter for this class of materials.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dudnikov V. A., Orlov Yu. S., Fedorov A. S., Solovyov L., Vereshchagin S., Burkov A. T., Novikov S., Ovchinnikov S. G.
Заглавие : Effect of oxygen nonstoichiometry on electrical conductivity and thermopower of Gd0.2Sr0.8FeO3-δ ferrite samples
Место публикации : Materials. - 2019. - Vol. 12, Is. 1. - Ст.74. - ISSN 19961944 (ISSN), DOI 10.3390/ma12010074
Примечания : Cited References: 24
Аннотация: The behavior of the resistivity and thermopower of the Gd0.2Sr0.8FeO3−δ ferrite samples with a perovskite structure and the sample stability in an inert gas atmosphere in the temperature range of 300–800 K have been examined. It has been established that, in the investigated temperature range, the thermoelectric properties in the heating‒cooling mode are stabilized at δ ≥ 0.21. It is shown that the temperature dependencies of the resistivity obtained at different δ values obey the activation law up to the temperatures corresponding to the intense oxygen removal from a sample. The semiconductor‒semiconductor electronic transitions accompanied by a decrease in the activation energy have been observed with increasing temperature. It is demonstrated that the maximum thermoelectric power factor of 0.1 µW/(cm·K2) corresponds to a temperature of T = 800 K.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Voronin A. S., Evsevskaya N. P., Volochaev M. N., Fadeev, Yu. V., Krylov A. S., Aleksandrovskii A. S., Luk'yanenko A. V., Abelyan S. R., Tambasova E. V.
Заглавие : Structural and Thermoelectric Properties of Optically Transparent Thin Films Based on Single-Walled Carbon Nanotubes
Коллективы : Russian Science Foundation [17-72-10079]
Место публикации : Phys. Solid State. - 2018. - Vol. 60, Is. 12. - P.2649-2655. - ISSN 1063-7834, DOI 10.1134/S1063783418120296. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 31. - This work was supported by the Russian Science Foundation (project no. 17-72-10079).
Аннотация: Thin films have been produced via a spray method from commercially available single-walled carbon nanotubes (SWCNTs). A SWCNT film thickness has ranged from ~10 to ~80 nm. The SWCNT diameter has accepted values of 1.6–1.8 nm. The existence of SWCNTs longer than 10 μm is established. The optimal thickness of a SWCNT thin film is found to be ~15 nm at which the transmittance exceeds 85%. The specific resistance of SWCNT thin films goes from ~1.5 × 10–3 to ~3 × 10–3 Ohm cm at room temperature. The pioneering study of the temperature dependences of the Seebeck coefficient and surface resistance is performed for this type of SWCNT. A surface resistance is found to increase with rising temperature. Furthermore, the Seebeck coefficient of SWCNT thin films weakly depends on temperature. Its value for all samples is evaluated to be ~40 μV/K. According to the sign of the Seebeck coefficient, thin films exhibit hole-type conductivity. Moreover, the power factor of a 15-nm thin SWCNT-film decreases with a temperature increase to 140◦C from the value of approximately ~120 to ~60 μW m–1 K–2. A further rise in temperature has led to a gain in the power factor.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Voronin A. S., Evsevskaya N. P., Volochaev M. N., Fadeev Y. V., Simunin M. M., Aleksandrovsky A. S., Smolyarova T. Е., Abelian S. R., Tambasova E. V., Gornakov M. O., Eremina V. A., Kuznetsov Y. M., Dorokhin M. V., Obraztsova E. D.
Заглавие : Thermoelectric properties of low-cost transparent single wall carbon nanotube thin films obtained by vacuum filtration
Место публикации : Physica E. - 2019. - Vol. 114. - Ст.113619. - ISSN 13869477 (ISSN), DOI 10.1016/j.physe.2019.113619
Примечания : Cited References: 53. - The study was carried out by a grant of Russian Science Foundation (project No. 17-72-10079). The electron microscopy examination was carried out at the Center for Collective Use of the Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences (Krasnoyarsk, Russia). V.A.E. and E.D.O. thank RFFI-18-32-00998_mol_a and RFFI-19-02-00859_a projects for support of development of two aqueous phase technique for nanotube separation.
Аннотация: The dispersions of semiconducting (sc-) and metallic (m-) SWCNTs with purity more than 98 and 86%, correspondingly, were obtained by using the aqueous two-phase extraction method. The unseparated (un-) SWCNTs contained ~3/4 of semiconducting and ~1/4 of metallic nanotubes. Thin films based on unseparated, semiconducting and metallic SWCNTs were prepared by vacuum filtration method. An Atomic Force Microscopy (AFM) and a Transmission Electronic Microscopy (TEM) were used to investigate the thin film microstructure. The thin SWCNT film transmittance was measured in the wavelength range of 300–1500 nm. Thermoelectric properties were carried out in the temperature range up to 200 °C. The largest Seebeck coefficient was observed for thin films based on semiconducting SWCNTs. The maximum value was 98 μV/K under the temperature of 170 °C. The lowest resistivity was 7.5·10−4·Ohm·cm at room temperature for thin un-SWCNT films. The power factor for m-SWCNT and un-SWCNT films was 47 and 213 μW m−1 K−2, correspondingly, at room temperature and 74 and 54 μW m−1 K−2 at 200 °C, respectively. For a thin sc-SWCNT film the maximum power factor was 2.8 μW m−1 K−2 at 160 °C. The un-SWCNT film thermal conductivity coefficient was 5.63 and 3.64 W m−1 K−1 and a thermoelectric figure of merit was 0.011 and 0.016 at temperatures of 23 and 50 °C, respectively.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Volochaev M. N., Voronin A. S., Evsevskaya N. P., Masyugin A. N., Aleksandrovskii A. S., Smolyarova T. E., Nemtsev I. V., Lyashchenko S. A., Bondarenko G. N., Tambasova E. V.
Заглавие : Structural, Optical, and Thermoelectric Properties of the ZnO:Al Films Synthesized by Atomic Layer Deposition
Место публикации : Phys. Solid State. - 2019. - Vol. 61, Is. 10. - P.1904-1909. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783419100354
Примечания : Cited References: 33. - This study was supported by the Russian Science Foundation, project no. 17-72-10079.
Аннотация: Aluminum-doped zinc oxide thin films have been grown by atomic layer deposition at a temperature of 200°C. Using X-ray diffraction, it has been established that the ZnO:Al thin films exhibits the reflections from the (100), (002), (110), and (201) ZnO hexagonal phase planes. The (101) and (102) planes have also been detected by electron diffraction. The ZnO:Al thin films grow smooth with a root-mean-square roughness of Rq = 0.33 nm and characteristic nanocrystallite sizes of ~70 and ~15 nm without additional aluminum or aluminum oxide phases. The transmission at a wavelength of 550 nm with regard to the substrate has been found to be 96%. The refractive indices and absorption coefficients of the ZnO:Al thin films in the wavelength range of 250–900 nm have been determined. The maximum refractive indices and absorption coefficients have been found to be 2.09 at a wavelength of 335 nm and 0.39 at a wavelength of 295 nm, respectively. The optical band gap is 3.56 eV. The resistivity, Seebeck coefficient, and power factor of the ZnO:Al thin films are ∼1.02 × 10–3 Ω cm, –60 μV/K, and 340 μW m–1 K–2 at room temperature, respectively. The maximum power factor attains 620 μW m–1 K–2 at a temperature of 200°C.
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20.

Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Belyaev B. A., Khodenkov S. A., Shepeta N. A., Chyurikova T. I., Malyshev D. O.
Заглавие : Investigation of microstrip ultra-wideband bandpass filters
Коллективы : International Scientific Conference on Electronic Devices and Control Systems
Место публикации : J. Phys. Conf. Ser. - 2020. - Vol. 1488, Is. 1. - Ст.012012. - DOI 10.1088/1742-6596/1488/1/012012
Примечания : Cited References: 16. - This study was supported by the Ministry of Education and Science of the Russian Federation, State assignment
Аннотация: Ultra-wideband microwave filters with high frequency-selective properties have been developed by means of electrodynamic numerical analysis of 3D models. Microstrip structures, which are studied theoretically and experimentally, use one multimode resonator and a pair of single-mode resonators. There is fairly good agreement between the calculated data and the data taken on the experimental sample. The relative bandwidth of the manufactured microstrip filter is 60%.
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