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Вальков, Валерий Владимирович.
Эффект Фано при туннелировании спин-поляризованного электрона через одиночную магнитную примесь / В. В. Вальков, С. В. Аксенов, Е. А. Уланов // Физ. низких температур. - 2013. - Т. 39, Вып. 1. - С. 48-52

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Переводная версия Val'kov, V. V. Fano effect upon tunneling of a spin-polarized electron through a single magnetic impurity / V.V. Val'kov // Low Temperature Physics / Физика низких температур . - 2013. - Vol. 39, no. 1. - P.35-38

Держатели документа:
Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Siberian Aerosp Univ, Krasnoyarsk 660014, Russia

Доп.точки доступа:
Аксенов, Сергей Владимирович; Aksenov, S. V.; Уланов, Е. А.; Val'kov, V. V.
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Аксенов, Сергей Владимирович.
Индуцирование спин-флип-процессами резонанса Фано при туннелировании электрона через спиновые структуры атомного масштаба [Текст] / В. В. Вальков, С. В. Аксенов, Е. А. Уланов // Журн. эксперим. и теор. физ. - 2013. - Т. 143, Вып. 5. - С. 984-990DOI 10.7868/S0044451013050248
Аннотация: Показано, что включение неупругих спин-зависящих процессов рассеяния электрона на потенциальных профилях одиночной магнитной примеси и спинового димера инициирует резонансные особенности, обусловленные эффектом Фано, в транспортных характеристиках таких спиновых структур атомного масштаба. Для реализации резонанса и антирезонанса Фано принципиальную роль играют спин-флип-процессы, приводящие к конфигурационному взаимодействию состояний системы. Установлено, что приложение внешнего магнитного поля и электрического поля затвора позволяет радикально изменять проводящие свойства спиновых структур через резонансный механизм Фано

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Переводная версия Spin-flip induction of Fano resonance upon electron tunneling through atomic-scale spin structures. - [Б. м. : б. и.]

Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Aksenov, S. V.; Уланов, Е. А.
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Val'kov, V. V.
Spin-flip induction of Fano resonance upon electron tunneling through atomic-scale spin structures / V.V. Val'kov // J. Experim. Theor. Phys. - 2013. - Vol. 116, Is. 5. - P. 854-859DOI 10.1134/S1063776113050130
Аннотация: The inclusion of inelastic spin-dependent electron scatterings by the potential profiles of a single magnetic impurity and a spin dimer is shown to induce resonance features due to the Fano effect in the transport characteristics of such atomic-scale spin structures. The spin-flip processes leading to a configuration interaction of the system’s states play a fundamental role for the realization of Fano resonance and antiresonance. It has been established that applying an external magnetic field and a gate electric field allows the conductive properties of spin structures to be changed radically through the Fano resonance mechanism

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Публикация на русском языке Индуцирование спин-флип-процессами резонанса Фано при туннелировании электрона через спиновые структуры атомного масштаба. - [S. l. : s. n.]

Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia;

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Ulanov, E. A.; Вальков, Валерий Владимирович
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    Val'kov, V. V.
    Fano effect upon tunneling of a spin-polarized electron through a single magnetic impurity / V.V. Val'kov, S. V. Aksenov, E. A. Ulanov // Low Temp. Phys. - 2013. - Vol. 39, no. 1. - P. 35-38 ; Физика низких температурDOI 10.1063/1.4775746
   Перевод заглавия: Эффект Фано при туннелировании спин-поляризованного электрона через одиночную магнитную примесь
Аннотация: The calculations of transport characteristics of a single magnetic impurity showed that the presence of different effective channels for electron transmission results in the Fano effect. It was noticed that the external magnetic field and gate voltage allow controlling the conducting properties, which are governed by the configuration interaction between the states of the system

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Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Ulanov, E. A.; Вальков, Валерий Владимирович

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Understanding quantum scattering properties in terms of purely classical dynamics: Two-dimensional open chaotic billiards / J. A. Mendez-Bermudez [et al.] // Phys. Rev. E. - 2002. - Vol. 66, Is. 4. - Ст. 46207, DOI 10.1103/PhysRevE.66.046207. - Cited References: 34 . - ISSN 1539-3755

РУБ Physics, Fluids & Plasmas + Physics, Mathematical
Рубрики:
BALLISTIC-TRANSPORT
   POINCARE SECTIONS
   CAVITIES
   EIGENFUNCTIONS
   LOCALIZATION
   CHANNEL
Кл.слова (ненормированные):
Chaos theory -- Electron tunneling -- Laser applications -- Nonlinear systems -- Probability -- Waveguide components -- Chaotic motion -- Microlasers -- Quantum scattering -- Scattering probability -- Quantum theory -- article
Аннотация: We study classical and quantum scattering properties of particles in the ballistic regime in two-dimensional chaotic billiards that are models of electron- or micro-waveguides. To this end we construct the purely classical counterparts of the scattering probability (SP) matrix \S(n,m)\(2) and Husimi distributions specializing to the case of mixed chaotic motion (incomplete horseshoe). Comparison between classical and quantum quantities allows us to discover the purely classical dynamical origin of certain general as well as particular features that appear in the quantum description of the system. On the other hand, at certain values of energy the tunneling of the wave function into classically forbidden regions produces striking differences between the classical and quantum quantities. A potential application of this phenomenon in the field of microlasers is discussed briefly. We also see the manifestation of whispering gallery orbits as a self-similar structure in the transmission part of the classical SP matrix.

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Держатели документа:
Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico
Univ Hradec Kralove, Dept Phys, Hradec Kralove, Czech Republic
Acad Sci Czech Republ, Inst Phys, Prague, Czech Republic
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Instituto de Fisica, Univ. Autonoma de Puebla, Apartado Postal J-48, Puebla 72570, Mexico
Department of Physics, University Hradec Kralove, Hradec Kralove, Czech Republic
Institute of Physics, Czech Academy of Sciences, Cukrovarnicka 10, Prague, Czech Republic
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Mendez-Bermudez, J. A.; Luna-Acosta, G. A.; Seba, P.; Pichugin, K. N.; Пичугин, Константин Николаевич
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Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure / N. V. Volkov [et al.] // Tech. Phys. Lett. - 2003. - Vol. 29, Is. 3. - P. 200-202, DOI 10.1134/1.1565633. - Cited References: 7 . - ISSN 1063-7850

РУБ Physics, Applied

Аннотация: We have studied the magnetoresistive properties of a structure comprising single crystal manganite Eu0.7Pb0.3MnO3 covered with an epitaxial iron film. At temperatures below T-C of the manganite crystal, the structure exhibits positive magnetoresistance. The behavior of the resistance as a function of the magnetic field is characteristic of a tunneling junction with ferromagnetic electrodes separated by a thin insulating film. The observed effect is related to the formation of a transition layer at the manganite-Fe interface, which is depleted of oxygen and possesses dielectric properties. The sensitivity of the resistance with respect to the magnetic field is determined both by the negative magnetoresistance of the manganite crystal and by the tunneling contribution to the conductivity, whereby the tunneling current depends on the mutual orientation of magnetic moments of the electrodes (Eu0.7Pb0.3MnO3 crystal and Fe film). (C) 2003 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk, Russia
Krasnoyarsk State Univ, Krasnoyarsk, Russia
ИФ СО РАН

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Patrin, G. S.; Патрин, Геннадий Семёнович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Sablina, K. A.; Саблина, Клара Александровна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Varnakov, S. N.; Варнаков, Сергей Николаевич
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Theory of spin filtering through quantum dots / J. . Fransson [et al.] // Phys. Rev. B. - 2003. - Vol. 67, Is. 20. - Ст. 205310, DOI 10.1103/PhysRevB.67.205310. - Cited References: 28 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
DEPENDENT TUNNELING JUNCTIONS
   NARROW ENERGY BANDS
   ELECTRON CORRELATIONS
   MAGNETORESISTANCE
   BARRIER
   POLARIZATION
Аннотация: Using a nonequilibrium diagram technique for Hubbard operator Green functions combined with a generalization of the transfer Hamiltonian formalism, we calculate the transport through a magnetic quantum dot system with spin-dependent couplings to the contacts. In specific regimes of the parameter space the spin-dependent tunnel current becomes more than 99.95% spin polarized, suggesting that a device thus constructed can be used in spin-filter applications. First-principles electronic structure calculations show the existence of nanostructured systems, such as, e.g., MgO/Fe/Pd(5)/Fe/MgO (001), with the desired properties in the direction of the current.

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Держатели документа:
Uppsala Univ, Dept Phys, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Fransson, J.; Holmstrom, E.; Eriksson, O.; Sandalov, I.
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Switching of current channels and new mechanism of magnetoresistance in a tunneling structure / N. V. Volkov [et al.] // Tech. Phys. Lett. - 2009. - Vol. 35, Is. 11. - P. 990-993, DOI 10.1134/S1063785009110054. - Cited References: 7. - This study was supported by the Russian Foundation for Basic Research (project nos. 08-02-00259 and 08-02-100397) and the Ministry of Education and Science of the Russian Federation (program "Development of Scientific Potential of Higher Education 2009-2010," project no. 2.1.1/6038). . - ISSN 1063-7850

РУБ Physics, Applied

Аннотация: We have experimentally studied the transport properties of a planar La(0.7)Sr(0.3)MnO(3) (LSMO)/Mn-depleted LSMO/MnSi tunneling structure, in which the Mn-depleted LSMO layer plays the role of a potential barrier between the conducting layers of LSMO and MnSi. The measurements were performed in geometry with the current direction parallel to the planes of interfaces in the tunneling structure. It is established that the structure exhibits a nonlinear current-voltage characteristic and possesses a positive magnetoresistance, the value of which depends on the tunneling current. It is suggested that specific features of the transport properties of this structure are related to the phenomenon of current channel switching between the conducting layers. The switching mechanism is based on the dependence of the resistance of the tunneling junction between the conducting layers on the bias voltage and the applied magnetic field.

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Держатели документа:
[Volkov, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Siberian State Aerosp Univ, Krasnoyarsk 660041, Russia
Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
Natl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam
ИФ СО РАН

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tsikalov, V. S.; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Yu, S. C.; Kim, D. H.; Chau, N.; Russian Foundation for Basic Research [08-02-00259, 08-02-100397]; Ministry of Education and Science of the Russian Federation [2.1.1/6038]
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Spectrum of localized states in graphene quantum dots and wires / V. V. Zalipaev [et al.] // Phys. Lett. A. - 2013. - Vol. 377, Is. 3-4. - P. 216-221, DOI 10.1016/j.physleta.2012.11.028 . - ISSN 0375-9601
Кл.слова (ненормированные):
Generalized Bohr-Sommerfeld quantization condition -- Graphene -- High-energy eigenstates -- Semiclassical approximation -- Tunneling
Аннотация: We developed semiclassical method and show that any smooth potential in graphene describing elongated a quantum dot or wire may behave as a barrier or as a trapping well or as a double barrier potential, Fabry-Perot structure, for 1D Schrodinger equation. The energy spectrum of quantum wires has been found and compared with numerical simulations. We found that there are two types of localized states, stable and metastable, having finite life time. These life times are calculated, as is the form of the localized wave functions which are exponentially decaying away from the wire in the perpendicular direction. В© 2012 Elsevier B.V. All rights reserved.

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Держатели документа:
Univ Loughborough, Dept Math Sci, Loughborough LE11 3TU, Leics, England
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Univ Loughborough, Dept Phys, Loughborough LE11 3TU, Leics, England

Доп.точки доступа:
Zalipaev, V. V.; Maksimov, D. N.; Максимов, Дмитрий Николаевич; Linton, C. M.; Kusmartsev, F. V.
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10.

Resonant tunneling in time-periodically modulated semiconductor nanostructures / G. P. Berman [et al.] // Physica B. - 1996. - Vol. 225, Is. 1-2. - P. 1-22, DOI 10.1016/0921-4526(96)00233-5. - Cited References: 39 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:
DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.

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Держатели документа:
LOS ALAMOS NATL LAB,CNLS,LOS ALAMOS,NM 87545
LV KIRENSKII INST PHYS,DEPT PHYS,KRASNOYARSK 660036,RUSSIA
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ИФ СО РАН

Доп.точки доступа:
Berman, G. P.; Берман, Геннадий Петрович; Bulgakov, E. N.; Булгаков, Евгений Николаевич; Campbell, D. K.; Sadreev, A. F.; Садреев, Алмаз Фаттахович
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