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1.


    Bulgakov, E. N.
    Spin polarization in quantum dots by radiation field with circular polarization / E. N. Bulgakov, A. F. Sadreev // JETP Letters. - 2001. - Vol. 73, Is. 10. - P. 505-509, DOI 10.1134/1.1387515. - Cited References: 25 . - ISSN 0021-3640
РУБ Physics, Multidisciplinary
Рубрики:
2-DIMENSIONAL ELECTRON-GAS
   RANDOM MAGNETIC-FIELD

   ORBIT INTERACTION

   TRANSPORT

   BARRIERS

   MAGNETORESISTANCE

   PHASE

Аннотация: For circular quantum dot (QD), taking into account the Razhba spin-orbit interaction (SOI), an exact energy spectrum is obtained. For a small SOI constant, the eigenfunctions of the QD are found. It is shown that the application of a radiation field with circular polarization removes the Kramers degeneracy of the QD eigenstates. Effective spin polarization of electrons transmitted through the QD owing to a radiation field with circular polarization is demonstrated. (C) 2001 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Inst Phys, Krasnoyarsk 660036, Russia
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
ИФ СО РАН
Institute of Physics, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Dept. of Phys. and Msrmt. Technology, Linkoping University, S-581 83 Linkoping, Sweden

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
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2.


    Fransson, J.
    Many-body approach to spin-dependent transport in quantum dot systems / J. . Fransson, O. . Eriksson, I. . Sandalov // Phys. Rev. Lett. - 2002. - Vol. 88, Is. 22. - Ст. 226601, DOI 10.1103/PhysRevLett.88.226601. - Cited References: 37 . - ISSN 0031-9007
РУБ Physics, Multidisciplinary
Рубрики:
SINGLE-ELECTRON TRANSISTOR
   COULOMB-BLOCKADE

   ANDERSON IMPURITY

   ROOM-TEMPERATURE

   TUNNEL-JUNCTIONS

   EVEN NUMBER

   MODEL

   MAGNETORESISTANCE

   OSCILLATIONS

   CONDUCTANCE

Аннотация: By means of a diagram technique for Hubbard operators, we show the existence of a spin-dependent renormalization of the localized levels in an interacting region, e.g., quantum dot, modeled by the Anderson Hamiltonian with two conduction bands. It is shown that the renormalization of the levels with a given spin direction is due to kinematic interactions with the conduction subbands of the opposite spin. The consequence of this dressing of the localized levels is a drastically decreased tunneling current for ferromagnetically ordered leads compared to that of paramagnetically ordered leads. Furthermore, the studied system shows a spin-dependent resonant tunneling behavior for ferromagnetically ordered leads.

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Держатели документа:
Univ Uppsala, Condensed Matter Theory Grp, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Eriksson, O.; Sandalov, I.
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3.


   
    Stress and growth of Ag monolayers on a Fe(100) whisker / R. . Mahesh [et al.] // Phys. Rev. B. - 2003. - Vol. 68, Is. 4. - Ст. 45416, DOI 10.1103/PhysRevB.68.045416. - Cited References: 42 . - ISSN 1098-0121
РУБ Physics, Condensed Matter
Рубрики:
FCC-FE FILMS
   MAGNETIC SUPERLATTICES

   ULTRATHIN FILMS

   OSCILLATIONS

   CU(100)

   SANDWICHES

   INTERLAYER

   LAYERS

   MAGNETORESISTANCE

   INTERFACE

Аннотация: In situ stress measurements have been performed during the deposition of epitaxial Ag monolayers on a Fe whisker. A compressive stress of -0.6 GPa is measured above a 5-ML Ag thickness which is ascribed to the epitaxial misfit of -0.8% between Ag and Fe. Back-extrapolation of the coverage dependent stress measurements to zero coverage reveals an Ag-induced change of the surface stress of Fe(100) of -1.23 N/m. Comparing this surface stress change with the calculated surface stress for Ag(100) suggests a tensile surface stress of +2.05 N/m for clean Fe(100). The deposition of 2 - 5 layers of Ag does not change the stress induced by the first layer significantly. This almost stress free growth is assigned to a rougher surface morphology which is most likely caused by a surface alloy formation.

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Держатели документа:
Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Mahesh, R.; Sander, D.; Zharkov, S. M.; Жарков, Сергей Михайлович; Kirschner, J.
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4.


   
    Formation of 4H-closely packed structure in thin films of metastable nanocrytalline Co13Cu87 alloy / D. L. Khalyapin [et al.] // Solid State Commun. - 2003. - Vol. 128, Is. 6-7. - P. 209-212, DOI 10.1016/j.ssc.2003.08.018. - Cited References: 10 . - ISSN 0038-1098
РУБ Physics, Condensed Matter
Рубрики:
MAGNETORESISTANCE
Кл.слова (ненормированные):
nanocrystalline materials -- metals -- metastable solid solution -- ion impact -- Metals -- Nanocrystalline materials -- Metastable solid solution -- Ion impact -- Crystal lattices -- Nanostructured materials -- Solid solutions -- Thin films -- Ion polishing -- Cobalt alloys
Аннотация: The crystal structure of the thin films of metastable Co13Cu87 alloy prepared by magnetron sputtering was investigated by transmission electron microscope. As-deposited films have a nanocrystal structure with an fcc lattice. As a result of the prolonged ion polishing with a beam of Ar ions with the energy of 4.7 keV, the four-layer 4H dhcp structure was formed. (C) 2003 Elsevier Ltd. All rights reserved.

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Держатели документа:
RAS, Kirensky Inst Phys SB, Lab Magnetodynam, Krasnoyarsk 660036, Russia
Hanyang Univ, Dept Met & Mat Sci, Ansan 452791, Kyunggi, South Korea
Krasnoyarsk State Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Laboratory of Magnetodynamics, Kirensky Institute of Physics, SB RAS, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Department of Metallurgical Science, Hanyang University, Ansan, Kyunggi-Do 452-791, South Korea
Krasnoyarsk State University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Khalyapin, D. L.; Kim, J.; Stolyar, S. V.; Столяр, Сергей Викторович; Turpanov, I. A.; Турпанов, Игорь Александрович; Kim, P. D.; Ким, Пётр Дементьевич; Kim, I.
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5.


   
    Self-propagating high-temperature synthesis and magnetic features of Fe-Al2O3 granulated films / V. G. Myagkov [et al.] // Phys. Solid State. - 2003. - Vol. 45, Is. 1. - P. 138-140, DOI 10.1134/1.1537424. - Cited References: 15 . - ISSN 1063-7834
РУБ Physics, Condensed Matter
Рубрики:
THIN-FILMS
   MAGNETORESISTANCE

Аннотация: The classical solid-phase reaction between Fe2O3 and Al layers in thin films is initiated. It is shown that, in the reaction products, Fe granulated films are formed in the Al2O3 nonconducting matrix. Analysis of the reaction equation demonstrates that the volume fraction of iron in the granulated films is less than the percolation threshold. This determines the magnetic properties of iron clusters in a superparamagnetic state. It is assumed that the nanocrystalline microstructure exists in thin films after solid-phase reactions proceeding under conditions of self-propagating high-temperature synthesis. (C) 2003 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Russian Acad Sci, Siberian Div, Inst Chem & Chem Technol, Krasnoyarsk 660036, Russia
ИФ СО РАН
ИХХТ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Inst. of Chem./Chemical Technology, Siberian Division, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Polyakova, K. P.; Полякова, Клавдия Павловна; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Polyakov, V. V.; Поляков, Виктор Васильевич
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6.


   
    Theory of spin filtering through quantum dots / J. . Fransson [et al.] // Phys. Rev. B. - 2003. - Vol. 67, Is. 20. - Ст. 205310, DOI 10.1103/PhysRevB.67.205310. - Cited References: 28 . - ISSN 1098-0121
РУБ Physics, Condensed Matter
Рубрики:
DEPENDENT TUNNELING JUNCTIONS
   NARROW ENERGY BANDS

   ELECTRON CORRELATIONS

   MAGNETORESISTANCE

   BARRIER

   POLARIZATION

Аннотация: Using a nonequilibrium diagram technique for Hubbard operator Green functions combined with a generalization of the transfer Hamiltonian formalism, we calculate the transport through a magnetic quantum dot system with spin-dependent couplings to the contacts. In specific regimes of the parameter space the spin-dependent tunnel current becomes more than 99.95% spin polarized, suggesting that a device thus constructed can be used in spin-filter applications. First-principles electronic structure calculations show the existence of nanostructured systems, such as, e.g., MgO/Fe/Pd(5)/Fe/MgO (001), with the desired properties in the direction of the current.

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Держатели документа:
Uppsala Univ, Dept Phys, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Fransson, J.; Holmstrom, E.; Eriksson, O.; Sandalov, I.
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7.


   
    Hall effect in the FexMn1-xS magnetic semiconductors / L. I. Ryabinkina [et al.] // Phys. Solid State. - 2004. - Vol. 46, Is. 6. - P. 1068-1072, DOI 10.1134/1.1767246. - Cited References: 17 . - ISSN 1063-7834
РУБ Physics, Condensed Matter
Рубрики:
MAGNETORESISTANCE
   FIELDS

   MNS

Аннотация: The electrical properties and the Hall effect in the FexMn1-xS magnetic semiconductors (0less than or equal toxless than or equal to0.5) have been experimentally studied in the range 77-300 K in magnetic fields of up to 15 kOe. The cation-substituted sulfides with 0.25less than or equal toxless than or equal to0.3 possessing colossal magnetoresistance (CMR) were established to be narrow-gap semiconductors with carrier concentrations nsimilar to10(11)-10(15) cm(-3) and high carrier mobilities musimilar to 10(2)-10(4) cm(2) V-1 s(-1). It is believed that the CMR effect in these sulfides can be explained in terms of the model of magnetic and electron phase separation, which is analogous to the percolation theory in the case of heavily doped semiconductors. (C) 2004 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Abramova, G. M.; Абрамова, Галина Михайловна; Romanova, O. B.; Романова, Оксана Борисовна; Kiselev, N. I.
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8.


   
    Spin-dependent transport in alpha-MnS single crystals / S. S. Aplesnin [et al.] // Phys. Solid State. - 2004. - Vol. 46, Is. 11. - P. 2067-2072 ; Phys. Solid State. - 2004. - Vol. 46, Is. 11. - P. 2067-2072, DOI 10.1134/1.1825551. - Cited References: 11 . - ISSN 1063-7834. - Вариант Sopus
РУБ Physics, Condensed Matter
Рубрики:
MAGNETORESISTANCE
Аннотация: The electrical resistivity of single crystal alpha-MnS in crystallographic directions [111] and [100] was found to be anisotropic in the temperature interval 77-300 K. The change in activation energy below the Neel temperature was determined. Magnetoresistance was revealed, and reversal of its sign in the (111) plane above the Neel point was found. The experimental data are analyzed in terms of the s-d model, with the manganese ion holes interacting with localized spins assumed to be free carriers. (C) 2004 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Akademgorodok, 660036, Russian Federation
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Akademgorodok, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Abramova, G. M.; Абрамова, Галина Михайловна; Romanova, O. B.; Романова, Оксана Борисовна; Kiselev, N. I.; Bovina, A. F.; Бовина, Ася Федоровна

}
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9.


   
    Intrinsic inhomogeneity in a (La0.4Eu0.6)(0.7)Pb0.3MnO3 single crystal: Magnetization, transport, and electron magnetic resonance studies / N. . Volkov [et al.] // Phys. Rev. B. - 2006. - Vol. 73, Is. 10. - Ст. 104401, DOI 10.1103/PhysRevB.73.104401. - Cited References: 29 . - ISSN 1098-0121
РУБ Physics, Condensed Matter
Рубрики:
INSULATOR-METAL TRANSITION
   PHASE-SEPARATION

   MAGNETORESISTANCE

   MANGANITES

   EXCHANGE

   STATE

Аннотация: Conventional magnetic and transport measurements of the melt-grown mixed-valence manganite (La0.4Eu0.6)(0.7)Pb0.3MnO3 have been supplemented by a magnetic resonance study. The experimental data support the model of two magnetic phases coexisting in the crystal volume. At a temperature T-*, which is well above Curie temperature T-C, ferromagnetic clusters appear in the sample. These ferromagnetic regions possess a higher conductivity in comparison with the paramagnetic background (majority phase). On cooling through T-C, the magnetization of the spatially confined ferromagnetic clusters of the minority phase freezes in random directions with respect to the magnetization of the ferromagnetic majority phase due to the difference of the exchange interactions at the phase boundaries from the intraphase interactions in sign and value. Such a mixed state is responsible for the observed magnetic glassylike behavior of the system that is characteristic of inhomogeneous magnets. The fluctuations of the magnetic coupling value and sign in the sample volume are related to strong competition between the ferromagnetic and antiferromagnetic exchange interactions, which, in turn, results from the quenched disorder caused by the random chemical replacement of the perovskite A site of the manganite. A phase-separation state comprised of two different ferromagnetic phases has been used to account for the colossal magnetoresistance phenomenon and the magnetic-field-driven nonlinear conduction found in the crystal.

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Держатели документа:
SB RAS, LV Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Tech Univ Munich, Phys Dept E21, D-85747 Garching, Germany
ИФ СО РАН
L. V. Kirensky Institute of Physics SB RAS, Krasnoyarsk 660036, Russian Federation
Physics-Department E21, Technical University of Munich, D-85747 Garching, Germany

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Patrin, K. G.; Патрин, Константин Геннадьевич; Sablina, K. A.; Саблина, Клара Александровна; Eremin, E. V.; Еремин, Евгений Владимирович; Vasiliev, V.; Vasiliev, A.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Boni, P.; Clementyev, E.
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10.


   
    Mechanisms of dissipation in a Josephson medium based on a high-temperature superconductor in a magnetic field / D. A. Balaev [et al.] // Phys. Solid State. - 2006. - Vol. 48, Is. 5. - P. 826-832, DOI 10.1134/S1063783406050039. - Cited References: 32 . - ISSN 1063-7834
РУБ Physics, Condensed Matter
Рубрики:
RESISTIVE TRANSITION
   PHASE-SLIP

   TRANSPORT-PROPERTIES

   MAGNETORESISTANCE

   SYSTEM

   MODEL

   YBA2CU3O7-X

   PENETRATION

   COMPOSITES

   HYSTERESIS

Аннотация: This paper reports on the results of an investigation into the influence of magnetic fields (0-60 kOe) on the temperature dependences of the electrical resistance R(T) of the Y3/4Lu1/4Ba2Cu3O7 + CuO composites. The structure of these composites is considered to be a network of tunnel-type Josephson junctions in which a nonsuperconducting component (CuO) forms boundaries (barriers) between high-temperature superconducting crystallites. The temperature dependence R(T) of the composites has two steps characteristic of granular superconductors: (i) an abrupt change in the electrical resistance at the critical temperature of high-temperature superconducting crystallites and (ii) a smooth transition to the superconducting state under the influence of the boundaries between the crystallites. The experimental dependences R(T) are analyzed within the Ambegaokar-Halperin model of thermal fluctuations in Josephson junctions and the flux creep model. An increase in the magnetic field leads to a crossover from the Ambegaokar-Halperin mechanism to the flux creep mechanism. The temperature dependences R(T) in the range of weak magnetic fields (from 0 to 10(2) Oe) are adequately described by the relationship following from the Ambegaokar-Halperin model. In the range of strong magnetic fields (from 10(3) to 6 x 10(4) Oe), the dissipation obeys the Arrhenius law R similar to exp(-U(H)/T)], which is characteristic of the flux creep model with a temperature-independent pinning energy U(H). The effective Josephson coupling energies and the pinning energies corresponding to the Ambegaokar-Halperin and flux creep mechanisms are determined.

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Держатели документа:
Russian Acad Sci, Siberian Div, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Petrov, M. I.; Петров, Михаил Иванович
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