Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Shaykhutdinov K. A., Tsikalov V. S., Petrov M. I., Balaev D. A., Semenov S. V.
Заглавие : The magnetic-field-driven effect of microwave detection in a manganite granular system
Место публикации : J. Phys. D. - 2008. - Vol. 41, Is. 1. - Ст.15004. - ISSN 0022-3727, DOI 10.1088/0022-3727/41/1/015004
Примечания : Cited References: 24
Предметные рубрики: IDENTICAL METALS
TUNNEL-JUNCTIONS
MAGNETORESISTANCE
RECTIFICATION
SPINTRONICS
TEMPERATURE
PEROVSKITES
Ключевые слова (''Своб.индексиров.''): bias currents--curie temperature--electric power generation--granular materials--magnetic field effects--microwave irradiation--voltage measurement--direct current voltage--magnetic tunnel junctions--metal insulator metal junctions--nonmagnetic metals--manganites
Аннотация: We demonstrate the microwave detection effect in a granular La0.7Ca0.3MnO3 sample. Dc voltage generated by the sample in response to microwave irradiation below the Curie temperature is found to be dependent on the applied magnetic field. The magnetic field dependence of the dc voltage has a broad peak resembling an absorption line. The detection effect depends substantially on the magnetic history of the sample; however, identical measurement conditions provide reproducibility of the experimental results. The detected dc voltage increases linearly with microwave power and strongly depends on a bias current through the sample. According to the results of systematic measurements, there exist two contributions to a value of the detected output signal. The first is magneto-independent; it can be explained in the framework of a mechanism used traditionally for description of the rectification effect in metal-insulator-metal junctions with nonmagnetic metals. The other is magneto-dependent; it originates from the interplay between the spin-dependent current through magnetic tunnel junctions and spin dynamics of the grains, which form these junctions in the sample.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Velikanov D. A., Balaev A. D., Balaev D. A., Yanushkevich K. I., Galyas A. I., Demidenko O. F., Bandurina O. N.
Заглавие : Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides
Разночтения заглавия :авие SCOPUS: Transport properties and ferromagnetism of Co x Mn 1 - X S sulfides
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 106, Is. 4. - P765-772. - ISSN 1063-7761, DOI 10.1134/S1063776108040158
Примечания : Cited References: 39
Предметные рубрики: GIANT VOLUME MAGNETOSTRICTION
COLOSSAL MAGNETORESISTANCE
MAGNETIC SEMICONDUCTORS
ELECTRICAL-PROPERTIES
ROOM-TEMPERATURE
ALPHA-MNS
SPINTRONICS
TRANSITION
FEXMN1-XS
FIELDS
Ключевые слова (''Своб.индексиров.''): coulomb interactions--current voltage characteristics--electromotive force--ferromagnetism--magnetic susceptibility--magnetization--thermoelectricity--transport properties--charge susceptibility--external magnetic fields--temperature intervals--thermoelectromotive force--cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Solov'ev L. A., Patrin G. S., Velikanov D. A.
Заглавие : Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the I center dot-Ga7.7Mn2.3 phase
Коллективы :
Разночтения заглавия :авие SCOPUS: Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the φ-Ga 7.7Mn 2.3 phase
Место публикации : JETP Letters. - 2010. - Vol. 92, Is. 10. - P.687-691. - ISSN 0021-3640, DOI 10.1134/S0021364010220108
Примечания : Cited References: 32. - This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 2.1.1/4399, the program "Development of the Research Potential of Higher Education in 2009-2010."
Предметные рубрики: PERPENDICULAR ANISOTROPY
EPITAXIAL-GROWTH
GA
SEMICONDUCTORS
SPINTRONICS
CRYSTAL
ALLOYS
Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 phase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Nazmitdinov R. G., Pichugin K. N., Valin-Rodriguez M.
Заглавие : Spin control in semiconductor quantum wires: Rashba and Dresselhaus interaction
Место публикации : Phys. Rev. B: AMER PHYSICAL SOC, 2009. - Vol. 79, Is. 19. - Ст.193303. - ISSN 1098-0121, DOI 10.1103/PhysRevB.79.193303
Примечания : Cited References: 20. - This work was partly supported by Ministerio de Ciencia e Innovacion (Spain), Grant No. FIS2008-00781/FIS and RFBR under Grants No. 08-02-00118 and No. 09-02-98005 (Russia).
Предметные рубрики: MAGNETIC-FIELDS
SPINTRONICS
Ключевые слова (''Своб.индексиров.''): semiconductor quantum wires--spin polarised transport--spin-orbit interactions
Аннотация: We show that spin precession in a semiconductor quantum wire, caused by the Rashba and the Dresselhaus interactions (both of arbitrary strengths), can be suppressed by dint of an in-plane magnetic field. Using a condition of the translational invariance in the longitudinal coordinate, we found another type of symmetry, which arises at a particular set of intensity and orientation of the magnetic field and explains this suppression. Based on our findings, we propose a transport experiment to measure the strengths of the Rashba and the Dresselhaus interactions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kagan, M. Yu., Val'kov V. V., Aksenov S. V.
Заглавие : Coulomb interactions-induced perfect spin-filtering effect in a quadruple quantum-dot cell
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.15-18. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.106. - ISSN 1873-4766(eISSN)
Примечания : Cited References:29. - We acknowledge fruitful discussions with P.I. Arseyev, N.S. Maslova, V.N. Mantsevich and R.Sh. Ikhsanov. This work was supported by the Comprehensive programme SB RAS no. 0358-2015-0007, the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects nos. 15-02-03082, 16-42-243056, 16-42-242036, 17-42-240441. M.Yu.K. thanks the Program of Basic Research of the National Research University Higher School of Economics for support.
Предметные рубрики: SPINTRONICS
TRANSPORT
MODEL
Ключевые слова (''Своб.индексиров.''): spin filter--quantum interference--fano-feshbach resonance--coulomb--correlations
Аннотация: A quadruple quantum-dot (QQD) cell is proposed as a spin filter. The transport properties of the QQD cell were studied in linear response regime on the basis of the equations of motion for retarded Green's functions. The developed approach allowed us to take into account the influence of both intra-and interdot Coulomb interactions on charge carriers' spin polarization. It was shown that the presence of the insulating bands in the conductance due to the Coulomb correlations results in the emergence of spin-polarized windows (SPWs) in magnetic field leading to the high spin polarization. We demonstrated that the SPWs can be effectively manipulated by gate fields and considering the hopping between central dots in both isotropic and anisotropic regimes.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Izotov A. V., Solovev P. N., Yakovlev I. A.
Заглавие : Determination of magnetic anisotropies and miscut angles in epitaxial thin films on vicinal (111) substrate by the ferromagnetic resonance
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Ministry of Education and Science of the Russian Federation [3.528.2014K]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.181-184. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.081. - ISSN 1873-4766(eISSN)
Примечания : Cited References:16. - This work was supported by the Ministry of Education and Science of the Russian Federation, Task no. 3.528.2014K.
Предметные рубрики: SURFACE
SPECTROMETER
SPINTRONICS
Ключевые слова (''Своб.индексиров.''): thin film--ferromagnetic resonance--magnetic anisotropy--vicinal (111)--surface--iron silicide
Аннотация: A method for determining magnetic anisotropy parameters of a thin single-crystal film on vicinal (111) substrate as well as substrate miscut angles from angular dependence of ferromagnetic resonance field has been proposed. The method is based on the following: (i) a new approach for the solution of the system of nonlinear equations for equilibrium and resonance conditions; (ii) a new expression of the objective function for the fitting problem. The study of the iron silicide films grown on vicinal Si(111) substrates with different miscut angles confirmed the efficiency of the method. The proposed method can be easily generalized to determine parameters of single-crystal films grown on substrates with an arbitrary cut.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.140-143. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.092. - ISSN 1873-4766(eISSN)
Примечания : Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Предметные рубрики: SPINTRONICS
BREAKDOWN
SILICON
SPIN
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kovaleva E. A., Kuzubov A. A., Avramov P. V., Kuklin A. V., Mikhaleva N. S., Krasnov P. O.
Заглавие : Characterization of LSMO/C60 spinterface by first-principle calculations
Место публикации : Org. Electron.: Phys. Mater. Appl.: Elsevier, 2016. - Vol. 37. - P.55-60. - ISSN 15661199 (ISSN), DOI 10.1016/j.orgel.2016.06.021
Примечания : Cited References: 40. - This work was supported by the Russian Scientific Fund (Project No. 14-13-00139). The authors would like to thank Institute of Computational Modeling of SB RAS, Krasnoyarsk; Joint Supercomputer Center of RAS, Moscow; Center of Equipment for Joint Use of Siberian Federal University, Krasnoyarsk; ICC of Novosibirsk State University and Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk for providing the access to their supercomputers.
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
TOTAL-ENERGY CALCULATIONS
AUGMENTED-WAVE METHOD
ORGANIC SPIN-VALVES
BASIS-SET
SEMICONDUCTORS
INJECTION
SPINTRONICS
TEMPERATURE
ALGORITHM
Ключевые слова (''Своб.индексиров.''): c60--lsmo--spinterface--dft--magnetic ordering
Аннотация: Spinterface between fullerene C60 and La0 7Sr0 3MnO3 (LSMO) was studied by means of density functional theory. Co-existence of many different configurations was shown, and probabilities of their appearance were estimated. Dependence of composite properties on configuration and temperature was also investigated. Key role of transition metal atoms in both binding between composite compartments and magnetic ordering in C60 molecule was discussed. The latter was suggested to be responsible for spin-polarized charge transport while overall magnetic moment of fullerene molecule is relatively small. © 2016 Elsevier B.V.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Eremin A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Frequency-dependent magnetotransport phenomena in a hybrid Fe/SiO2/p-Si structure
Место публикации : J. Appl. Phys.: American Institute of Physics, 2012. - Vol. 112, Is. 12. - Ст.123906. - ISSN 0021-8979, DOI 10.1063/1.4769788
Примечания : Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, Project No. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics, Project No. II.4.3; the Siberian Branch of the Russian Academy of Sciences, Integration Projects Nos. 85 and 102, and the Federal target program Scientific and Pedagogical Personnel of Innovative Russia (State Contract No. NK-556P_15).
Предметные рубрики: SILICON
IRON
SPINTRONICS
PAIRS
Аннотация: We report the large magnetoimpedance effect in a hybrid Fe/SiO2/p-Si structure with the Schottky barrier. The pronounced effect of magnetic field on the real and imaginary parts of the impedance has been found at temperatures 25-100K in two relatively narrow frequency ranges around 1 kHz and 100MHz. The observed frequency-dependent magnetotransport effect is related to the presence of localized "magnetic" states near the SiO2/p-Si interface. In these states, two different recharging processes with different relaxation times are implemented. One process is capture-emission of carriers that involves the interface levels and the valence band; the other is the electron tunneling between the ferromagnetic electrode and the interface states through SiO2 potential barrier. In the first case, the applied magnetic field shifts energy levels of the surface states relative to the valence band, which changes recharging characteristic times. In the second case, the magnetic field governs the spin-dependent tunneling of carriers through the potential barrier. The "magnetic" interface states originate, most likely, from the formation of the centers that contain Fe ions, which can easily diffuse through the SiO2 layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769788]
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Baron F. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Extremely large magnetoresistance induced by optical irradiation in the Fe/SiO2/p-Si hybrid structure with Schottky barrier
Коллективы : Russian Foundation for Basic Research [11-02-00367-a]; Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures [20.8]; Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics [II.4.3]; Siberian Branch of the Russian Academy of Sciences [43, 85, 102]; Russian Ministry of Education and Science [N 02.G25.31.0043]
Место публикации : J. Appl. Phys.: American Institute of Physics, 2013. - Vol. 114, Is. 9. - Ст.093903. - P. - ISSN 0021-8979, DOI 10.1063/1.4819975
Примечания : Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, Project No. 11-02-00367-a; Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics, Project No. II.4.3; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 43, 85 and 102; Project of the Russian Ministry of Education and Science N 02.G25.31.0043.
Предметные рубрики: SPIN POLARIZATION
SPINTRONICS
SILICON
Аннотация: We report giant magnetoresistance (MR) effect that appears under the influence of optical radiation in common planar device built on Fe/SiO2/p-Si hybrid structure. Our device is made of two Schottky diodes connected to each other by the silicon substrate. Photo-induced MR is positive and the MR ratio reaches the values in excess of 10(4)%. The main peculiarity of the MR behavior is its strong dependence on the magnitude and the sign of the bias current across the device and, most surprisingly, upon polarity of the magnetic field. To explain such unexpected behavior of the MR, one needs to take into account contribution of several physical mechanisms. The main contribution comes from the existence of localized interface states at the SiO2/p-Si interface, which provide the spots for the photo-current conduction by virtue of the sequential tunneling through them or thermal generation and optical excitation of mobile charges. External magnetic field changes the probability of these processes due to its effect on the energy states of the conduction centers. Two possible mechanisms that may be responsible for the observed dependence of magneto-resistance on the field polarity are discussed: the effect of the Lorentz force on moving carriers and spin splitting of electrons moving in the electrostatic potential gradient (Rashba effect). The most significant observation, in our opinion, is that the observed MR effect is seen exclusively in the subsystem of minority carriers transferred into non-equilibrium state by optical excitation. We suggest that building such magneto-sensitive devices based on this mechanism may set a stage for new types of spintronic devices to emerge. (C) 2013 AIP Publishing LLC.
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