Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (2)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=Localization<.>)

Общее количество найденных документов : 57
Показаны документы с 1 по 10

1-10 11-20 21-30 31-40 41-50 51-57

Kolovsky, A. R.
Wannier-Stark states and Bloch oscillations in the honeycomb lattice / A. R. Kolovsky, E. N. Bulgakov // Phys. Rev. B. - 2013. - Vol. 87, Is. 3. - Ст. 033602. - P. , DOI 10.1103/PhysRevA.87.033602 . - ISSN 1050-2947
Кл.слова (ненормированные):
Bloch oscillations -- Chaotic state -- Honeycomb lattices -- Localization length -- Localized state -- Quantum particles -- Static fields -- Tight-binding approximations -- Solid state physics -- Honeycomb structures
Аннотация: We study a quantum particle in a tilted honeycomb lattice in the tight-binding approximation. First we discuss the particle eigenstates, i.e., the stationary Wannier-Stark states. These states are proved to be extended states for the rational directions of the static field and localized states for the irrational directions. We find energy bands of the extended states and analyze the localized states. It is shown, in particular, that the localized honeycomb Wannier-Stark states are chaotic states with irregular dependence of the localization length on the static field magnitude. Second we discuss Bloch oscillations of the quantum particle. Irregular Bloch oscillations for irrational directions are observed. В© 2013 American Physical Society.

Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Bulgakov, E. N.; Булгаков, Евгений Николаевич; Коловский, Андрей Радиевич
}
Найти похожие

Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry / N. V. Volkov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст. 123924. - P. , DOI 10.1063/1.3600056 . - ISSN 0021-8979
Кл.слова (ненормированные):
Channel switching -- Comparative analysis -- Fe films -- Fe layer -- Ferromagnetic films -- High temperature -- Hybrid structure -- Inversion layer -- Metal-insulator-semiconductors -- Negative magneto-resistance -- Planar geometries -- Positive magnetoresistance -- Schottky barriers -- Semiconductor substrate -- Temperature variation -- Weak localization -- Critical currents -- Electric resistance -- Ferromagnetic materials -- Geometry -- Magnetic fields -- Magnetoelectronics -- Magnetoresistance -- Metal insulator boundaries -- Metal insulator transition -- MIS devices -- Schottky barrier diodes -- Silicon -- Silicon compounds -- Switching circuits -- Transport properties -- Semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.

Scopus,
Читать в сети ИФ
Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович
}
Найти похожие

Kolovsky, A. R.
Cyclotron-Bloch dynamics of a quantum particle in a two-dimensional lattice. II. Arbitrary electric field directions / A. R. Kolovsky, I. Chesnokov, G. Mantica // Phys. Rev. E. - 2012. - Vol. 86, Is. 4. - Ст. 41146, DOI 10.1103/PhysRevE.86.041146. - Cited References: 15. - We thank Jean Bellissard and Italo Guarneri for illuminating comments on the nature of the energy spectrum for irrational beta. Computations for this work have been performed on the CSN4 cluster of INFN in Pisa. G. M. acknowledges the support of MIUR-PRIN project "Nonlinearity and Disorder in Classical and Quantum Transport Processes." . - ISSN 1539-3755

РУБ Physics, Fluids & Plasmas + Physics, Mathematical
Рубрики:
MAGNETIC-FIELDS
LOCALIZATION
Аннотация: We study the quantum dynamics of a charged particle in a two-dimensional lattice, subject to constant and homogeneous electric and magnetic fields. We find that different regimes characterize these motions, depending on a combination of conditions, corresponding to weak and strong electric field intensities, rational or irrational directions of the electric field with respect to the lattice, and small or large values of the magnetic (Peierls) phase.

Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ
Держатели документа:
[Kolovsky, Andrey R.] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Kolovsky, Andrey R.
Chesnokov, Ilya] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Mantica, Giorgio] Univ Insubria, Ctr Nonlinear & Complex Syst, Dept Sci & High Technol, I-22100 Como, Italy
[Mantica, Giorgio] INFN Sez Milano, Milan, Italy
[Mantica, Giorgio] CNISM Unita Como, Como, Italy

Доп.точки доступа:
Chesnokov, I. Yu.; Mantica, G.; Коловский, Андрей Радиевич
}
Найти похожие

    Bulgakov, E. N.
    Induced tunneling and localization for a quantum particle in tilted two-dimensional lattices / E. N. Bulgakov, A. R. Kolovsky // Phys. Rev. B. - 2014. - Vol. 89, Is. 3. - Ст. 035116, DOI 10.1103/PhysRevB.89.035116. - Cited References: 17. - The authors express their gratitude to D. N. Maksimov for useful remarks and acknowledge financial support of the Russian Academy of Sciences through the SB RAS integration project No. 29 Dynamics of atomic Bose-Einstein condensates in optical lattices. . - ISSN 1098-0121. - ISSN 1550-235X
   Перевод заглавия: Индуцированное туннелирование и локализация квантовой частицы в наклонных двухмерных решетках

РУБ Physics, Condensed Matter
Рубрики:
DYNAMIC LOCALIZATION
   CHARGED-PARTICLE
   OPTICAL LATTICE
   ELECTRIC-FIELD
   DIRAC POINTS
Аннотация: We consider a quantum particle in tilted two-dimensional lattices in the tight-binding approximations. We show that for certain lattice geometries the particle can freely move across the lattice in the direction perpendicular to the vector of the static force. This effect is argued to be analog of the photon-induced tunneling in driven one-dimensional lattices. We calculate the particle dispersion relation by using a method based on the Bogoliubov-Mitropolskii averaging technique from the theory of dynamical systems. This dispersion relation draws the analogy with driven one-dimensional lattices further by eventually showing band collapses when a control parameter is varied.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Kolovsky, A. R.; Коловский, Андрей Радиевич; Булгаков, Евгений Николаевич; Russian Academy of Sciences through the SB RAS [29]
}
Найти похожие

Photonic crystals with resonantly absorbing defects / V. G. Arkhipkin [et al.] ; ed. Vetrov, SY // LFNM 2006: 8th International Conference on Laser and Fiber-Optical Networks Modeling, Proceedings : IEEE, 2006. - P. 313-316. - Cited References: 12 . - ISBN 1-4244-0233-6

РУБ Instruments & Instrumentation + Optics + Telecommunications
Рубрики:
MICROCAVITIES
DISPERSION
SPECTRA
Кл.слова (ненормированные):
photonic crystal -- photonic band gap -- resonantly absorbing gas -- light localization
Аннотация: We show that the defect mode of photonic crystal with resonantly absorbing gas in defect is splitted due to effects of linear absorption and dispersion of resonant atoms. The splitting and shape of the lines is very sensitive to an incidence-angle of radiation on PC. The cases of one and two defects are considered.

WOS

Доп.точки доступа:
Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Timofeev, I. V.; Тимофеев, Иван Владимирович; Shabanov, A. V.; Шабанов, Александр Васильевич; Vetrov, S. Ya.; Ветров, Степан Яковлевич; Timofeev, V. P.; Vetrov, S. Y. \ed.\; International Conference on Laser and Fiber-Optical Networks Modeling (8 ; 2006 ; Jun 29-Jul 01 ; Kharkiv)
}
Найти похожие

Enhanced electron coherence in atomically thin Nb3SiTe6 / J. Hu [et al.] // Nat. Phys. - 2015. - Vol. 11, Is. 6. - P. 471-476, DOI 10.1038/NPHYS3321. - Cited References:38. - The authors are grateful to J. DiTusa for informative discussions. The work at Tulane is supported by the US National Science Foundation under grant DMR-1205469 and the NSF EPSCoR Cooperative Agreement No. EPS-1003897, with additional support from the Louisiana Board of Regents. P.W.A. and T.J.L. acknowledge the support of the US Department of Energy, Office of Science, Basic Energy Sciences, under Award No. DE-FG02-07ER46420. L.Y.A. and P.B.S. acknowledge the support of the Russian Science Foundation (project #14-12-01217) and are grateful to the Joint Supercomputer Center of the Russian Academy of Sciences and 'Lomonosov' Research Computing Center for the opportunity of using a cluster computer for the quantum-chemical calculations. P.B.S. acknowledges a Grant of the President of the Russian Federation for government support of young PhD scientists MK-6218.2015.2 (project ID 14.Z56.15.6218-MK). Z.I.P. acknowledges the support of the Leading Science School program (No NSh-2886.2014.2). D.N. and H.J. acknowledge support through the US Department of Energy, Office of Science, Basic Energy Sciences award DE-FG02-06ER46337. The work at UNO is supported by the US National Science Foundation under the NSF EPSCoR Cooperative Agreement No. EPS-1003897, with additional support from the Louisiana Board of Regents. . - ISSN 1745. - ISSN 1745-2481. -

РУБ Physics, Multidisciplinary
Рубрики:
PHONON SCATTERING RATES
WEAK-LOCALIZATION
METAL-FILMS
Аннотация: It is now well established that many of the technologically important properties of two-dimensional (2D) materials, such as the extremely high carrier mobility in graphene(1) and the large direct band gaps in MoS2 monolayers(2), arise from quantum confinement. However, the influence of reduced dimensions on electron-phonon (e-ph) coupling and its attendant dephasing effects in such systems has remained unclear. Although phonon confinement(3-7) is expected to produce a suppression of e-ph interactions in 2D systems with rigid boundary conditions(6,7), experimental verification of this has remained elusive(8). Here, we show that the e-ph interaction is, indeed, modified by a phonon dimensionality crossover in layered Nb3SiTe6 atomic crystals. When the thickness of the Nb3SiTe6 crystals is reduced below a few unit cells, we observe an unexpected enhancement of the weak-antilocalization signature in magnetotransport. This finding strongly supports the theoretically predicted suppression of e-ph interactions caused by quantum confinement of phonons.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Tulane Univ, Dept Phys & Engn Phys, New Orleans, LA 70118 USA
Tulane Univ, Coordinated Instrument Facil, New Orleans, LA 70118 USA
Technol Inst Superhard & Novel Carbon Mat, Moscow 142190, Russia
Moscow Inst Phys & Technol, Moscow 141700, Russia
Emanuel Inst Biochem Phys, Moscow 119334, Russia
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Univ New Orleans, Dept Phys, New Orleans, LA 70148 USA
Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA

Доп.точки доступа:
Hu, J.; Liu, X.; Yue, C. L.; Liu, J. Y.; Zhu, H. W.; He, J. B.; Wei, J.; Mao, Z. Q.; Antipina, L. Yu.; Popov, Z. I.; Попов, Захар Иванович; Sorokin, P.B.; Liu, T.J.; Adams, P.W.; Radmanesh, S. M. A.; Spinu, L.; Ji, H.; Natelson, D.; US National Science Foundation [DMR-1205469]; NSF EPSCoR Cooperative Agreement [EPS-1003897]; Louisiana Board of Regents; US Department of Energy, Office of Science, Basic Energy Sciences [DE-FG02-07ER46420]; Russian Science Foundation [14-12-01217]; Russian Federation [MK-6218.2015.2, 14.Z56.15.6218-MK]; Leading Science School program [NSh-2886.2014.2]; US Department of Energy, Office of Science, Basic Energy Sciences award [DE-FG02-06ER46337]; US National Science Foundation under the NSF EPSCoR Cooperative Agreement [EPS-1003897]
}
Найти похожие

Disorder- and correlation-induced charge carriers localization in oxyborate MgFeBO4, Mg0.5Co0.5FeBO4, CoFeBO4 single crystals / Y. V. Knyazev [et al.] // J. Alloys Compd. - 2015. - Vol. 642. - P. 232-237, DOI 10.1016/j.jallcom.2015.04.056. - Cited References:32. - This work has been financed by Council for Grants of the President of the Russian Federation (Project Nos. NSh-2886.2014.2, SP-938.2015.5), Russian Foundation for Basic Research (Project Nos. 13-02-00958-a, 13-02-00358-a, 14-02-31051-mol-a). The work of one of coauthors (M.S.P.) was supported by the grant of KSAI "Krasnoyarsk Regional Fund of Supporting Scientific and Technological Activities'' and by the Program of Foundation for Promoting the Development of Small Enterprises in Scientific and Technical Sphere ("UMNIK'' program). Financial support from the Spanish MINECO MAT11/23791 and DGA IMANA project E-34 is acknowledged. . - ISSN 0925. - ISSN 1873-4669. -

РУБ Chemistry, Physical + Materials Science, Multidisciplinary + Metallurgy & Metallurgical Engineering
Рубрики:
WARWICKITE
Fe2OBO3
FeBO3
Кл.слова (ненормированные):
Transition metal alloys and compounds -- Disordered system -- Semiconductors -- Electrical transport
Аннотация: The temperature dependence of the resistivity of single crystalline Mg1−xCoxFeBO4 samples with x = 0.0, 0.5, 1.0 is investigated for the temperature range (210–400 K). The conduction was found to be governed by Mott variable-range hopping (VRH) in the low-temperature range (T = 210–270 K) and by thermo-activation mechanism in the high-temperature range (T = 280–400 K). Microscopic electronic parameters, such as the density of the localized states near the Fermi level, localization length, the hopping length, and the activation energy have been obtained. The change of the activation energy observed at high-temperature range was attributed to local structure distortions around Fe and Co atoms. The complicated behavior of charge transfer mechanisms is discussed based on two approaches: atomic disorder and electron correlations.
Температурная зависимость сопротивления монокристаллических образцов Mg1- XCoxFeBO4 с х = 0,0; 0.5, 1.0 исследована в интервале температур (210-400 К). Было установлено, что проводимость регулируется Мотт-переменной длиной прыжка (VRH) в области низких температур (T = 210-270 К) и термо-активационным механизмом в области высоких температур (Т = 280-400 К). Микроскопические электронные параметры, такие как плотность локализованных состояний вблизи уровня Ферми, длины локализации, длина прыжка, и энергия активации были получены. Изменение энергии активации наблюдается при высокой температурном Диапазоне, что было связано с локальными искажениями структуры вокруг Fe и Co атомов. Сложный механизм поведения переноса заряда обсуждается на основе двух подходов: атомный беспорядок и электронная корреляция.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660074, Russia
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Univ Zaragoza, Serv Medidas Fis, E-50009 Zaragoza, Spain
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
Dept Fis Mat Condensada, Zaragoza 50009, Spain
Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia

Доп.точки доступа:
Knyazev, Yu. V.; Kazak, N. V.; Казак, Наталья Валерьевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Ivanova, N. B.; Иванова, Наталья Борисовна; Bezmaternykh, L. N.; Безматерных, Леонард Николаевич; Arauzo, A.; Bartolome, J.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
Найти похожие

    Room temperature magneto-transport properties of nanocomposite Fe–In2O3 thin films / I. A. Tambasov [et al.] // Physica B. - 2015. - Vol. 478. - P. 135-137, DOI 10.1016/j.physb.2015.08.054. - Cited References: 28. - This study was supported by the Russian Foundation for Basic Research (Grants # 15-02-00948-A,), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the program of Foundation for Promotion of Small Enterprises in Science and Technology (No 6662 FY2015) ("UMNIK" program). . - ISSN 0921-4526
   Перевод заглавия: Магнитно-транспортные свойства композитных Fe –In2O3 тонких пленок при комнатной температуре

РУБ Physics, Condensed Matter
Рубрики:
Doped In2O3 Films
   High-performance
   Indium oxide
   Transistors
   Magnetoresistance
   Ferromagnetism
Кл.слова (ненормированные):
Indium oxide -- Fe-In2O3 thin films -- Weak localization -- Disordered semiconductors
Аннотация: A ferromagnetic Fe–In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe–In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe–In2O3 thin film had n=1.94·1020 cm−3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~−0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk Worker 31, Krasnoyarsk, Russian Federation
Siberian Federal University, Svobodny prospect 79, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Gornakov, K. O.; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Yozhikova, E. V.
}
Найти похожие

Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides / I. S. Sandalov [et al.] // The Eighth Int. Sem. on Ferroelastic Phys. : book of abstracts. - 2015. - P. 362

Доп.точки доступа:
Sandalov, I. S.; Сандалов, Игорь Семёнович; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International seminar on ferroelastic physics(8 ; 2015 ; sept. ; 14-16 ; Voronezh); Международный семинар по физике сегнетоэластиков(8(13) ; 2015 ; сент. ; 13-16 ; Воронеж); Российская академия наук; Воронежский государственный технический университет
}
Найти похожие

10.

    Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides / I. S. Sandalov [et al.] // Acta Crystallogr. A. - 2015. - Vol. 71, Supplement. - Ст. s362, DOI 10.1107/S2053273315094590 . - ISSN 0108-7673
   Перевод заглавия: Квазичастичная зонная структура, спектральные веса и степень локализации d-электронов в силицидах железа
Кл.слова (ненормированные):
strongly correlated electrons -- delocalization

Смотреть статью,
Читать в сети ИФ

Доп.точки доступа:
Sandalov, I. S.; Сандалов, Игорь Семёнович; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; European Crystallographic Meeting(29 ; 2015 ; Aug. ; 23-28 ; Rovinj, Croatia)
}
Найти похожие