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Magnetic and structure investigations of heterostructures based on a cUcRs[[D]]2[[/D]] single crystal [Текст] / A. I. Pankrats [и др.] // V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism : abstracts. - Vladivostok : FEFU, 2013. - P214 . - ISBN 978-5-7444-3124-2

Доп.точки доступа:
Pankrats, A. I.; Панкрац, Анатолий Иванович; Abramova, G. M.; Абрамова, Галина Михайловна; Tugarinov, V. I.; Тугаринов, Василий Иванович; Vorotynov, A. M.; Воротынов, Александр Михайлович; Zharkov, S. M.; Жарков, Сергей Михайлович; Zeer, G. M.; Зеер Г.М.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Sokolov, V. V.; Соколов В. В.; Boehm, M.; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; Sept. ; 15-21 ; Vladivostok)
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    Синтез и магнитные свойства пленок [(CoP)soft/NiP/(CoP)hard/ NiP]n / Г. С. Патрин [и др.] // Решетневские чтения : материалы XIX Междунар. науч. конф. : в 2-х ч. - 2015. - Ч. 1. - С. 539-541. - Библиогр.: 5 . - ISSN 1990-7702
   Перевод заглавия: Silicide FeSi investigation with the electron spectroscopy methods
Кл.слова (ненормированные):
магнитные гетероструктуры -- петля гистерезиса -- межслоевое взаимодействие -- магнитная пружина -- magnetic heterostructures -- hysteresis loop -- interlayer coupling -- magnetic spring
Аннотация: В многослойных пленках Co-Ni-P обнаружено изменение формы петли намагничивания при сопряжении магнитомягкого и магнитожесткого слоев, введение немагнитной прослойки влияет на перемагничивание структуры. Делается вывод о необходимости учета биквадратичного взаимодействия при рассмотрении межслоевых взаимодействий.
While studying the Co-Ni-P multilayers we found the variation in the shape of magnetization loop at the conjugation of magnetically soft and magnetically hard layers. The insertion of a nonmagnetic spacer significantly affects magnetization reversal in the structure. We conclude that it is necessary to take into account the biquadratic interaction in studying the interlayer coupling.

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Патрин, Геннадий Семёнович; Patrin, G. S.; Шиян, Ярослав Германович; Shiyan, Ya. G.; Патрин, Константин Геннадьевич; Patrin, K. G.; Юркин, Глеб Юрьевич; Yurkin, G. Yu.; "Решетневские чтения", международная научно-практическая конференция(19 ; 2015 ; нояб. ; 10-14 ; Красноярск)
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Chernozatonskii, L. A.
Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms / L. A. Chernozatonskii, P. B. Sorokin, J. W. Bruning // Appl. Phys. Lett. - 2007. - Vol. 91, Is. 18. - Ст. 183103, DOI 10.1063/1.2800889. - Cited References: 24 . - ISSN 0003-6951

РУБ Physics, Applied
Рубрики:
CARBON
GAS
Кл.слова (ненормированные):
Electronic properties -- Energy gap -- Graphite -- Hydrogen -- Semiconductor materials -- Superlattices -- Electronic spectra -- Graphene sheets -- Quasi-two-dimensional heterostructures -- Semiconducting nanostructures -- Nanostructured materials
Аннотация: It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the formation of 2HG-SL changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with n, but with nonzero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of zigzag strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. (C) 2007 American Institute of Physics.

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Держатели документа:
Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119334, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Humboldt Univ, Math Inst, D-12489 Berlin, Germany
ИФ СО РАН
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, 4 Kosigina St., Moscow 119334, Russian Federation
Siberian Federal University, 79 Svobodny Ave., Krasnoyarsk 660041, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Academgorodok, Krasnoyarsk 660036, Russian Federation
Institute of Mathematics, Humboldt University of Berlin, Berlin 12489, Germany

Доп.точки доступа:
Sorokin, P. B.; Bruning, J. W.
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Bulgakov, E. N.
Current-voltage characteristics of the resonant tunnelling double-barrier structure under time-periodical perturbation / E. N. Bulgakov, A. F. Sadreev // J. Phys.: Condens. Matter. - 1996. - Vol. 8, Is. 45. - P. 8869-8887, DOI 10.1088/0953-8984/8/45/020. - Cited References: 38 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
SEMICONDUCTOR DOUBLE-BARRIER
   OSCILLATING QUANTUM-WELL
   DEPENDENT TRANSPORT
   INFRARED-RADIATION
   TUNNELING TIMES
   HETEROSTRUCTURES
   TRANSMISSION
   MODEL
   FREQUENCIES
   COHERENT
Аннотация: We consider a typical semiconductor resonant tunnelling GaAs/AlGaAs/GaAs nanostructure which forms a double-barrier potential with quasienergy levels corresponding to transition frequencies in the infrared and microwave regions. Two types of dynamical perturbation of the heterostructure in the form V-1(x, t) = V(1)x cos Omega t and V-2(t) = V-2 cos Omega t are considered. We analyse numerically a reconstruction of the electron transmission through the heterostructure and the current-voltage characteristics (IVC) under the influence of these dynamical perturbations. Both weak and strong perturbations are considered. We investigate the dependences of the transmission on the electron energy and the frequency of the external field with the main accent on the case where a frequency of the perturbation is tuned to a transition between quasienergies of the double-barrier structure. it is found that these resonant phenomena give rise to new peaks and dips in the IVC. In particular, it is shown that the dipole type of perturbation V-1(x, t) gives rise to a Rabi splitting of the transmission peaks and under certain conditions to a Rabi splining of the IVC peaks and dips. We demonstrate that dynamical perturbation may induce a direct current opposite to the direction of the applied voltage, and that this phenomenon takes the form of a sharp dip which has a resonant origin. It is observed that the dipole type of perturbation V-1(x, t) of laser radiation is more effective for tuning the IVC than the first perturbation V-2(t). Also absorption and emission of energy by an electron transmitted through the DBRTS are considered.

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Держатели документа:
Kirensky Institute of Physics, 660036, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
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Resonant tunneling in time-periodically modulated semiconductor nanostructures / G. P. Berman [et al.] // Physica B. - 1996. - Vol. 225, Is. 1-2. - P. 1-22, DOI 10.1016/0921-4526(96)00233-5. - Cited References: 39 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:
DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.

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Держатели документа:
LOS ALAMOS NATL LAB,CNLS,LOS ALAMOS,NM 87545
LV KIRENSKII INST PHYS,DEPT PHYS,KRASNOYARSK 660036,RUSSIA
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ИФ СО РАН

Доп.точки доступа:
Berman, G. P.; Берман, Геннадий Петрович; Bulgakov, E. N.; Булгаков, Евгений Николаевич; Campbell, D. K.; Sadreev, A. F.; Садреев, Алмаз Фаттахович
}
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MBE of iron silicide heterostructures for spintronics / S. N. Varnakov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. I4.3. - P. 213. - References: 4. - The work was supported by The Complex program of SB RAS № II.2P, project 0358-2015-0003, the Ministry of Education and Science of the RF (State task . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
molecular beam epitaxy -- iron silicides -- spintronic devices

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Lyashchenko, S. A.; Лященко, Сергей Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; Belyaev, B. A.; Беляев, Борис Афанасьевич; Zharkov, S. M.; Жарков, Сергей Михайлович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Bartolomé, J.; Badía-Romano, L.; Rubín, J. ; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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Spin polarization of zgnr4/lsmo(001) heterostructures: mno-terminated spinterface / A. V. Kuklin [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P10.28. - P. 496. - References: 3 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
LSMO -- zigzag graphene nanoribbons -- DFT -- spin polarization -- ZGNR

Доп.точки доступа:
Kuklin, A. V.; Куклин, Артем Валентинович; Kuzubov, A. A.; Кузубов, Александр Александрович; Fedorov, A. S.; Федоров, Александр Семенович; Avramov, P. V.; Аврамов, Павел Вениаминович; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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Electron spectroscopy of iron disilicide / A. S. Parshin [et al.] // Tech. Phys. - 2016. - Vol. 61, Is. 9. - P. 1418-1422, DOI 10.1134/S1063784216090176. - Cited References: 33 . - ISSN 1063-7842

РУБ Physics, Applied
Рубрики:
SCATTERING CROSS-SECTIONS
   ENERGY-LOSS SPECTROSCOPY
   QUANTITATIVE-ANALYSIS
   LOSS SPECTRA
   SURFACE
   SI
   HETEROSTRUCTURES
   INTERFACE
   PARAMETER
   PHASE
Аннотация: We have reported on the results of a complex investigation of iron disilicide FeSi2 using characteristic electron energy loss spectroscopy, inelastic electron scattering cross section spectroscopy, and X-ray photoelectron spectroscopy. It has been shown that the main peak in the spectra of inelastic electron scattering for FeSi2 is a superposition of two unresolved peaks, viz., surface and bulk plasmons. An analysis of the fine structure of the spectra of inelastic electron scattering cross section by their decomposition into Lorentzlike Tougaard peaks has made it possible to quantitatively estimate the contributions of individual energy loss processes to the resulting spectrum and determine their origin and energy. © 2016, Pleiades Publishing, Ltd.

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Публикация на русском языке Исследование дисилицида железа методами электронной спектроскопии [Текст] / А. С. Паршин [и др.] // Журн. техн. физ. : Физико-технический институт им. А. Ф. Иоффе РАН, 2016. - Т. 86 Вып. 9. - С. 136–140

Держатели документа:
Rechetnev Siberian State Aerospace University, ul. Krasnoyarskii rabochii 31, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, Akademgorodok 50/24, Krasnoyarsk, Russian Federation
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosobirsk, Russian Federation
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodor 50/38, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Parshin, A. S.; Igumenov, A. Y.; Mikhlin, Y. L.; Pchelyakov, O. P.; Zhigalov, V. S.; Жигалов, Виктор Степанович
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VS2/7graphene heterostructures as promising anode material for Li-ion batteries / N. S. Mikhaleva [et al.] // J. Phys. Chem. C. - 2017. - Vol. 121, Is. 43. - P. 24179-24184, DOI 10.1021/acs.jpcc.7b07630. - Cited References: 64. - This work was supported by the government contract of the Ministry of Education and Science of the Russian Federation to Siberian Federal University (Grant No. 16.1455.2017/PCh). N. S. M. acknowledges the financial support of the RFBR, through the research project No. 16- 32-60003 mol-a-dk. M. A. V. acknowledges the financial support of the RFBR, through the research project No. 16-32- 00252 mol-a. Z. I. P. gratefully acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2017-001) and the support of the RFBR through the research project No. 17-42- 190308 r-a. . - ISSN 1932-7447
Аннотация: Two-layer freestanding heterostructure consisting of VS2 monolayer and graphene was investigated by means of density functional theory computations as a promising anode material for lithium-ion batteries (LIB). We have investigated lithium atoms’ sorption and diffusion on the surface and in the interface layer of VS2/graphene heterostructure with both H and T configurations of VS2 monolayer. The theoretically predicted capacity of VS2/graphene heterostructures is high (569 mAh/g), and the diffusion barriers are considerably lower for the heterostructures than for bulk VS2, so that they are comparable to barriers in graphitic LIB anodes (∼0.2 eV). Our results suggest that VS2/graphene heterostructures can be used as a promising anode material for lithium-ion batteries with high power density and fast charge/discharge rates.

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Держатели документа:
Siberian Federal University, 79 Svobodny av., Krasnoyarsk, Russian Federation
National University of Science and Technology MISiS, 4 Leninskiy prospekt, Moscow, Russian Federation
Kirensky Institute of Physics, 50/38 Akademgorodok, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Mikhaleva, N. S.; Visotin, M. A.; Высотин Максим Александрович; Kuzubov, A. A.; Popov, Z. I.; Попов, Захар Иванович
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10.

Structure and electrophysical properties of thin-film SnO2–In2O3 heterostructures / O. V. Zhilova [et al.] // J. Mater. Sci.: Mater. Electron. - 2019. - Vol. 30, Is. 13. - P. 11859–11867, DOI 10.1007/s10854-019-01503-w. - Cited References: 28. - The authors of the article want to express their gratitude to Professor S.A. Gridnev for helpful discussions. This work was supported by the Ministry of Education and Science in the framework of the state task (project No: 3.1867.2017/4.6). . - ISSN 0957-4522
Кл.слова (ненормированные):
Semiconducting indium compounds
Аннотация: The structure and electrical properties of In2O3 and SnO2 oxide semiconductors and heterostructures based on them has been experimentally investigated. The films were prepared by the method of layer-by-layer deposition using the ion-beam sputtering. The transition from the two-phase film of amorphous SnO2 and In2O3 islands, formed during the layer-by-layer deposition, to a multilayer structure consisting of the amorphous SnO2 and In2O3 continuous layers occurs with an increase in the bilayer thickness. The electrophysical properties of the (SnO2/In2O3)69 heterostructures are determined by the transition from the random distribution of SnO2 and In2O3 amorphous phases to a multilayer structure and the temperature range of measurement. For all studied systems, a consistent change in the prevailing mechanism of conductivity is observed at temperatures from 77 to 300 K. In (SnO2/In2O3)69 thin films with a bilayer thickness hbl ˂ 2.5 nm, change of the prevailing conduction mechanism takes place according to the next sequence: variable range hopping conduction over localized states near the Fermi level, hopping conduction over the nearest neighbors and hopping transfer of carriers excited into localized states near the band edges at temperatures close to room temperature.

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Держатели документа:
Voronezh State Technical University, Moskovskij Avenue, 14, Voronezh, 394000, Russian Federation
Kirensky Institute of Physics FRC KSC SB RAS, Akademgorodok, 50, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Zhilova, O. V.; Pankov, S. Y.; Sitnikov, A. V.; Kalinin, Y. E.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Makagonov, V. A.
}
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11.

Mikhaleva, N. S.
Theoretical investigation of NiI2 based bilayer heterostructures / N. S. Mikhaleva, M. A. Visotin, Z. I. Popov // Key Eng. Mater. - 2019. - Vol. 806 KEM. - P. 10-16, DOI 10.4028/www.scientific.net/KEM.806.10. - Cited References: 38. - N. S. M. acknowledges the financial support of the RFBR project No. 16-32-60003 mol_a_dk.
Кл.слова (ненормированные):
2D semiconductors -- Ab initio calculations -- Heterostructures -- NiI2 -- Transition metal dichalcogenides
Аннотация: The electronic structure of nickel iodide monolayer in NiI2/ScX2 (X = S, Se and Te) and NiI2/NiTe2 heterostructures was investigated by density functional theory (DFT). The spin-asymmetric semiconducting behavior of NiI2 monolayer in these interfaces was observed. The width of the band gap of the NiI2 monolayer practically does not change in heterostructures and remains at the level of 1.7 and 3.0 eV for minor and major spin channels, respectively. The NiI2 layer can be p-doped by stacking with ScX2 dichalcogenides. On the contrary, charge transfer (~0.01 |e| per f.u.) from NiTe2 leads to n-doping of NiI2. As a result, the Fermi level shifts up to the area of NiI2 conduction band with spin down carriers only, which gives prospects of using this material in spin filter applications. The electronic structure of NiI2/ScTe2 under isotropic deformation in the plane remains the same under tension and compression within 5%, except for a small change in the band gap in the composite layers of NiI2 within 25%. This allows one to conclude about the stability of the electronic properties under deformations, which gives possibility to use the heterostructures in flexible electronics devices. © 2019 Trans Tech Publications Ltd, Switzerland

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Держатели документа:
Siberian Federal University, av. Svobodny 79, Krasnoyarsk, 660041, Russian Federation
L.V. Kirensky Institute of Physics, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
National University of Science and Technology “MISiS”, Leninsky pr. 4, Moscow, 119049, Russian Federation

Доп.точки доступа:
Visotin, M. A.; Высотин, Максим Александрович; Popov, Z. I.; Попов, Захар Иванович; Asian School-Conference on Physics and Technology of Nanostructured Materials(4 ; 2018 ; Sept. ; 23-28 ; Vladivostok)
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12.

    About photocatalytic properties of some heterostructures based on strontium bismuthate / D. S. Shtarev [et al.] // Key Eng. Mater. - 2019. - Vol. 806 KEM. - P. 161-166, DOI 10.4028/www.scientific.net/KEM.806.161. - Cited References: 9. - The research was carried out at the expense of a grant from the Russian Science Foundation (project No. 17-73-00007). . - ISSN 1013-9826
   Перевод заглавия: О фотокаталитических свойствах некоторых гетероструктур на основе висмутата стронция
Кл.слова (ненормированные):
Alkaline earth metal bismuthate -- Diffuse reflectance spectroscopy -- Heterostructure -- Photocatalytic activity -- Strontium bismuthate -- Visible light active photocatalysts
Аннотация: In the work, some heterostructures consisting of two different strontium bismuthates from the following series are investigated: Sr2Bi2O5, Sr3Bi2O6 and Sr6Bi2O11. It is shown that the creation of such heterostructures affects both optical and photocatalytic properties. The results obtained are promising for the further development and research of new heterostructures based on two different strontium bismuthates and for studying the characteristics of their photocatalytic activity. © 2019 Trans Tech Publications Ltd, Switzerland

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Institute of Tectonics and Geophysics Named After Yu.A. Kosygin of Far Eastern Branch of the Russian Academy of Sciences, Khabarovsk, Russian Federation
Far Eastern State Transport University, 47 Seryshev St., Khabarovsk, 680021, Russian Federation
Kirensky Institute of Physics, Akademgorodok 50, bld. 38, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Shtarev, D. S.; Shtareva, A. V.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Syuy, A. V.; Nashchochin, E. O.; Asian School-Conference on Physics and Technology of Nanostructured Materials(4 ; 2018 ; Sept. ; 23-28 ; Vladivostok)
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13.

Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films / M. N. Volochaev [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 11. - P. 1465-1471, DOI 10.1134/S106378261911023X. - Cited References: 16. - This study was carried out in the framework of the state assignment of the Ministry of Science and Higher Education of the Russian Federation, project no. 3.1867.2017/4.6. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter
Рубрики:
HETEROSTRUCTURES
Кл.слова (ненормированные):
thin films -- multilayers -- oxide semiconductors -- hopping conductivity -- thermal stability
Аннотация: (ZnO/SiO2)25 thin-film multilayers consisting of nanocrystalline ZnO layers and amorphous SiO2 spacers with a bilayer thickness from 6 to 10 nm are synthesized in a single deposition process. An analysis of the temperature dependences of the electrical resistivity of (ZnO/SiO2)25 thin films shows that, in the temperature range of 77–300 K, the dominant conductivity mechanism successively changes from hopping conductivity with a variable hopping length in a narrow energy band near the Fermi level at temperatures of 77–250 K to thermally activated impurity conductivity around room temperature. Using the obtained temperature dependences of the electrical resistivity, the effective density of localized states at the Fermi level and the activation energy of impurity levels are estimated. The effect of heat treatment on the structure and electrical properties of the synthesized films is examined. It is established that in (ZnO/SiO2)25 thin-film systems at temperatures of 580–600°C, the ZnO and SiO2 layers chemically interact, which is accompanied by destruction of the multilayer structure and formation of the Zn2SiO4 compound with a tetragonal structure (sp. gr. I-42d).

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Публикация на русском языке

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk, Russia.
Voronezh State Tech Univ, Voronezh 394026, Russia.

Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Kalinin, Yu E.; Kashirin, M. A.; Makagonov, V. A.; Pankov, S. Yu; Bassarab, V. V.; Ministry of Science and Higher Education of the Russian Federation [3.1867.2017/4.6]
}
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14.

Triple VTe2/graphene/VTe2 heterostructures as perspective magnetic tunnel junctions / L. V. Begunovich, A. V. Kuklin, M. A. Visotin [et al.] // Appl. Surf. Sci. - 2020. - Vol. 510. - Ст. 145315, DOI 10.1016/j.apsusc.2020.145315. - Cited References: 67. - This work was supported by the government contract of the Ministry of Science and Higher Education of the Russian Federation to Siberian Federal University (Grant No. 16.1455.2017/PCh ) and Russian Foundation for Basic Research , Government of Krasnoyarsk Territory , Krasnoyarsk Regional Fund of Science to the research project: “Quantum chemical modeling of Bychkov-Rashba interfaces based on transition metal compounds and nanoscaled organic fragments”. P.V.A. and A.V.K. gratefully acknowledges the financial support of National Research Foundation of Republic of Korea for support under Grant No. NRF-2017R1A2B4004440 . A.V.K. also acknowledges the US Air Force Office of Scientific Research (contract FA-9550-18-1-0032) for support. The authors would like to thank Information Technology Center, Novosibirsk State University, Institute of Computational Modelling of SB RAS, Krasnoyarsk for providing the access to supercomputer facilities, and Irkutsk Supercomputer Center of SB RAS for providing the access to HPC-cluster “Akademik V.M. Matrosov” (Irkutsk Supercomputer Center of SB RAS, Irkutsk: ISDCT SB RAS; http://hpc.icc.ru, accessed 13.05.2019 ) . - ISSN 0169-4332
Кл.слова (ненормированные):
Magnetic tunnel junction -- Vanadium ditelluride monolayer -- Transition metal dichalcogenides -- Graphene -- Density functional theory
Аннотация: New perspective 1.4 nm thick spin-polarized triple heterostructures based on graphene sandwiched between two vanadium ditelluride monolayers (VTe2/graphene/VTe2) were studied using ab initio DFT technique. Both possible trigonal prismatic (H-VTe2) and octahedral (T-VTe2) VTe2 phases were considered to design and study graphene-based heterostructures. It was shown that the interaction with graphene changes the electronic structure of 2D T-VTe2 from metallic to half-metallic, making T phase perspective to be used for magnetic tunnel junctions. The electronic subsystem of graphene fragment is slightly hole doped. Calculated tunnel magnetoresistance ratio for the favorable heterostructure configuration estimated within the Julliere model is 220%, which opens a way to use VTe2/graphene/VTe2 as prospective magnetic tunnel junction in novel spintronic nanodevices based on tunnel magnetic resistance and spin transfer torque effects.

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Держатели документа:
Siberian Federal University, 79 Svobodny Av., Krasnoyarsk, 660041, Russian Federation
Department of Theoretical Chemistry and Biology, School of Engineering Sciences in Chemistry, Biotechnology and Health, Royal Institute of Technology, Stockholm, SE-10691, Sweden
Kirensky Institute of Physics SB RAS, 50-38 Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Department of Chemistry, Kyungpook National University, 80 Daehakro, Bukgu, Daegu, 41566, South Korea

Доп.точки доступа:
Begunovich, L. V.; Kuklin, A. V.; Visotin, M. A.; Высотин, Максим Александрович; Kuzubov, A. A.; Tomilin, F. N.; Томилин, Феликс Николаевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Mikhalev, Y. G.; Avramov, P. V.
}
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15.

Transport and magnetic phenomena in ZnO-С thin-film heterostructures / M. N. Volochaev, A. B. Granovsky, O. V. Zhilova [et al.] // Superlattices Microstruct. - 2020. - Vol. 140. - Ст. 106449, DOI 10.1016/j.spmi.2020.106449. - Cited References: 36. - The work was supported by the Ministry of Education and Science of Russia (project No. 3.1867.2017/4.6 ) and the RFBR (project No. 19-07-00471). The work was partially funded by the Academy of Finland . - ISSN 0749-6036
Кл.слова (ненормированные):
Zinc oxide -- Amorphous carbon -- Multi-layered structures -- Composites -- Hopping conductivity -- Weak localization -- Magnetoresistance
Аннотация: ZnO- and C-based heterostructures were fabricated by the layer-by-layer deposition technique using the ion-beam sputtering process. Structure, electrical and magnetic properties of fabricated heterostructures are discussed. The two-phase (ZnO and C) films are evolved into a multilayer structure, consisting of amorphous carbon and crystalline ZnO layers when the bilayer thickness increases. When carbon is added to ZnO, its electrical resistivity reduces. The conduction mechanism changes from the variable-range hopping in a narrow energy band to the nearest neighbors hopping in ZnO–C films with a thickness of h ˂ 150 nm. The temperature dependence of conductivity changes from the Arrhenius-like to logarithmic law, indicating that the strong charge localization turns into a weak one when the film thickness is about 150 nm. The negative magnetoresistance of up to 1% was detected at 77 K. The film ferromagnetism at the temperature of 10 K was not found.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk660036, Russian Federation
Lomonosov Moscow State University, Moscow119991, Russian Federation
Voronezh State Technical University, Voronezh394026, Russian Federation
National Research Centre ‘‘Kurchatov Institute”, Moscow123182, Russian Federation
Voronezh State University, Voronezh394003, Russian Federation
Lappeenranta-Lahti University of Technology, Lappeenranta FI53851, Finland

Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Granovsky, A. B.; Zhilova, O. V.; Kalinin, Y. E.; Ryl'kov, V. V.; Sumets, M. P.; Makagonov, V. A.; Pankov, S. Y.; Sitnikov, A. V.; Fadeev, E.; Lahderanta, E.; Foshin, V.
}
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16.

Bikbaev, R. G.
Hyperbolic metamaterial for the Tamm plasmon polariton application / R. G. Bikbaev, S. Y. Vetrov, I. V. Timofeev // J. Opt. Soc. Am. B. - 2020. - Vol. 37, Is. 8. - P. 2215-2220, DOI 10.1364/JOSAB.394935. - Cited References: 51. - Russian Foundation for Basic Research (18-32-00053, 19-42-240004, 19-52-52006) . - ISSN 0740-3224. - ISSN 1520-8540

РУБ Optics
Рубрики:
PHOTONIC CRYSTAL
   PERFECT ABSORBER
   STATES
   HETEROSTRUCTURES
Аннотация: The possibility of using a hyperbolic metamaterial to form conventional and epsilon-near-zero Tamm plasmon polaritons in the near-infrared and visible spectral ranges is demonstrated. The spectral properties of the hyperbolic metamaterial are investigated in the framework of the effective medium theory and confirmed by the transfer matrix method. It is found that at the oblique incidence of light onto a structure, the I-type hyperbolic metamaterial can be implemented, while II-type cannot. The sensitivity of the epsilon-near-zero wavelength to the variation in the angle of light incidence for TE and TM waves is demonstrated. It is shown that both the high-quality and broadband Tamm plasmon polaritons are excited in the investigated structures.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Vetrov, S. Ya.; Ветров, Степан Яковлевич; Timofeev, I. V.; Тимофеев, Иван Владимирович; Бикбаев, Рашид Гельмединович; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [18-32-00053, 19-42-240004, 19-52-52006]
}
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17.

    Heterostructures based on Pd–Au nanoparticles and cobalt phthalocyanine for hydrogen chemiresistive sensors / N. S. Nikolaeva, D. D. Klyamer, S. M. Zharkov [et al.] // Int. J. Hydrogen Energy. - 2021. - Vol. 46. Is. 37. - P. 19682-19692, DOI 10.1016/j.ijhydene.2021.03.082. - Cited References: 74. - The work on the synthesis of Au MOCVD precursor and deposition of gold nanoparticles on various surfaces were funded by Russian Science Foundation (RSF) (research project № 20-15-00222 ). The TEM and electron diffraction investigations were conducted in the SFU Joint Scientific Center supported by the State assignment ( #FSRZ-2020-0011 ) of the Ministry of Science and Higher Education of the Russian Federation . - ISSN 0360-3199
   Перевод заглавия: Гетероструктуры, основанные на наночастицах Pd-Au и фтолоцианине кобальта, для хемирезисторных сенсоров водорода
Кл.слова (ненормированные):
Palladium nanoparticles -- Gold nanoparticles -- Bimetallic nanoparticles -- Metal phthalocyanine -- Chemiresistive sensors -- Hydrogen
Аннотация: In this work, the effect of Pd, Au and PdAu nanoparticles on sensor response of cobalt phthalocyanine films to hydrogen was studied. For this purpose, novel heterostructures based on cobalt phthalocyanine and PdAu nanoalloys were obtained by a combination of vacuum thermal evaporation and pulsed metalorganic chemical vapor deposition (MOCVD) and investigated as active layers for hydrogen detection. The structural features and phase composition of the prepared heterostructures were studied by the techniques of X-ray diffraction, transmission electron microscopy and electron diffraction. The concentration of metal nanoparticles in the samples was determined by inductively coupled plasma atomic emission spectroscopy (ICP-AES). The chemiresistive sensor response of CoPc/M (M = Pd, Au, Pd0.2Au0.8 and Pd0.8Au0.2) to hydrogen (100–400 ppm, room temperature) was compared with that of bare CoPc films. It was shown that the sensor response of the investigated heterostructures to hydrogen (300 ppm) increased in the order CoPc (0.2%) < CoPc/Pd0.2Au0.8 (1.9%) ~ CoPc/Au (2.2%) < CoPc/Pd (2.7%) < CoPc/Pd0.8Au0.2 (5.6%).

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Держатели документа:
Nikolaev Institutes of Inorganic Chemistry SB RAS, Lavrentiev Pr. 3, Novosibirsk, 630090, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Nikolaeva, N. S.; Klyamer, D. D.; Zharkov, S. M.; Жарков, Сергей Михайлович; Tsygankova, A. R.; Sukhikh, A. S.; Morozova, N. B.; Basova, T. V.
}
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18.

Structural and electronic properties of the heterostructures based on Me2AlC-phase predicted by quantum chemistry calculations / F. N. Tomilin, V. Kozak, D. Ivanova [et al.] // International workshop on the properties of functional MAX-materials (2nd FunMax) : book of abstracts / org. com. M. Farle [et al.]. - 2021. - P. 49

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Доп.точки доступа:
Farle, M. \org. com.\; Ovchinnikov, S. G. \org. com.\; Овчинников, Сергей Геннадьевич; Tarasov, A. S. \org. com.\; Тарасов, Антон Сергеевич; Smolyarova, T. E. \org. com.\; Смолярова, Татьяна Евгеньевна; Tomilin, F. N.; Томилин, Феликс Николаевич; Kozak, V.; Ivanova, D.; Fedorova, N.; Shubin, A.; International workshop on functional MAX-materials(2 ; 2021 ; Sept. 14-17 ; Krasnoyarsk (on-line)); Kirensky Institute of Physics; Siberian Federal Univercity
}
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19.

    Heterostructures based on cobalt phthalocyanine films decorated with gold nanoparticles for the detection of low concentrations of ammonia and nitric oxide / S. I. Dorovskikh, D. D. Klyamer, E. A. Maksimovskiy [et al.] // Biosensors. - 2022. - Vol. 12, Is. 7. - Ст. 476, DOI 10.3390/bios12070476. - Cited References: 74. - This work was funded by the Russian Science Foundation (grant 21-73-10142). The authors acknowledge the Russian Ministry of Education and Science (project 121031700314-5) for the access to literature search databases. TEM investigations were conducted in the SFU Joint Scientific Center . - ISSN 2079-6374
   Перевод заглавия: Гетероструктуры на основе пленок фталоцианина кобальта, декорированные наночастицами золота, для обнаружения низких концентраций аммиака и оксида азота
Кл.слова (ненормированные):
gold nanoparticles -- cobalt phthalocyanine -- gas-phase deposition -- chemiresistive sensors -- nitric oxide -- ammonia
Аннотация: This work is aimed at the development of new heterostructures based on cobalt phthalocyanines (CoPc) and gold nanoparticles (AuNPs), and the evaluation of the prospects of their use to determine low concentrations of ammonia and nitric oxide. For this purpose, CoPc films were decorated with AuNPs by gas-phase methods (MOCVD and PVD) and drop-casting (DC), and their chemiresistive sensor response to low concentrations of NO (10–50 ppb) and NH3 (1–10 ppm) was investigated. A comparative analysis of the characteristics of heterostructures depending on the preparation methods was carried out. The composition, structure, and morphology of the resulting hybrid films were studied by X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma atomic emission (ICP-AES) spectroscopy, as well as electron microscopy methods to discuss the effect of these parameters on the sensor response of hybrid films to ammonia and nitric oxide. It was shown that regardless of the fabrication method, the response of Au/CoPc heterostructures to NH3 and NO gases increased with an increase in the concentration of gold. The sensor response of Au/CoPc heterostructures to NH3 increased 2–3.3 times compared to CoPc film, whereas in the case of NO it increased up to 16 times. The detection limits of the Au/CoPc heterostructure with a gold content of ca. 2.1 µg/cm2 for NH3 and NO were 0.1 ppm and 4 ppb, respectively. It was shown that Au/CoPc heterostructures can be used for the detection of NH3 in a gas mixture simulating exhaled air (N2—74%, O2—16%, H2O—6%, CO2—4%).

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Держатели документа:
Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Lavrentiev Pr., Novosibirsk, 630090, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Laboratory of Electron Microscopy, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Dorovskikh, S. I.; Klyamer, D. D.; Maksimovskiy, E. A.; Volchek, V. V.; Zharkov, S. M.; Жарков, Сергей Михайлович; Morozova, N. B.; Basova, T. V.
}
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