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Val'kov, V. V.
Fano antiresonance induced by the rashba spin-orbit coupling in systems with conduction channels exhibiting the points of nonanalyticity in fermion paths / V. V. Val'kov, A. D. Fedoseev // JETP Letters. - 2017. - Vol. 106, Is. 5. - P. 302-307, DOI 10.1134/S0021364017170131. - Cited References:17. - This work was funded by the Russian Foundation for Basic Research (project nos. 16-42-242036, 16-42-243056, and 17-42-240441), Government of the Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the Research (project nos. 21/16, 29/16, and 02/17). . - ISSN 0021-3640. - ISSN 1090-6487

РУБ Physics, Multidisciplinary

Аннотация: It is shown that the combined effect of the nonanalyticity of the channel for the motion of charge carriers and the Rashba spin-orbit coupling induces resonant anomalies in the transport characteristics of nanosystems related to the size quantization. When the characteristic length determined by the ratio of the hopping integral and the spin-orbit coupling constant coincides with the distance between the points of nonanalyticity, the size effect arises in the channel. It manifests itself in the complete reflection from the device, which can be treated as the Fano antiresonance. The current-voltage characteristics of the nanosystem with the nonanalytical channel undergo significant changes at slight variations of the spin-orbit coupling constant near its critical value.

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Публикация на русском языке Вальков, Валерий Владимирович. Индуцирование спин-орбитальным взаимодействием Рашбы размерного антирезонанса Фано в каналированных системах с точками неаналитичности фермионных траекторий [Текст] / В. В. Вальков, А. Д. Федосеев // Письма в Журн. эксперим. и теор. физ. - 2017. - Т. 106 Вып. 5. - С. 282-287

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Fed Res Ctr KSC, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Fedoseev, A. D.; Федосеев, Александр Дмитриевич; Вальков, Валерий Владимирович; Russian Foundation for Basic Research [16-42-242036, 16-42-243056, 17-42-240441]; Government of the Krasnoyarsk Territory; Krasnoyarsk Region Science and Technology Support Fund [21/16, 29/16, 02/17]
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Val'kov, V. V.
Effect of total reflection from a symmetric two-channel device with fermion path nonanalyticity points induced by Rashba spin-orbit coupling / V. V. Val’kov, A. D. Fedoseev // Bull. Russ. Acad. Sci. Phys. - 2018. - Vol. 82, Is. 5. - P. 550-553, DOI 10.3103/S1062873818050313. - Cited References: 8. - The reported study was funded by Russian Foundation for Basic Research (project nos. 16-42-242036, 16-42-243056, and 17-42-240441), Government of Krasnoyarsk Territory, and Krasnoyarsk Region Science and Technology Support Fund to the research (project nos. 22/17, 24/17, and 02/17). . - ISSN 1062-8738
Кл.слова (ненормированные):
Electron transport -- Nonanalyticity -- Rashba spin-orbit coupling -- Regular polygon -- Spin-orbit couplings -- Symmetric systems -- Total reflection -- Transmission coefficients
Аннотация: The effect Rashba spin-orbit coupling has on transmission coefficient through a symmetric system with fermion path nonanalyticity points is illustrated using the example of a regular polygon-shaped chain. It is shown that the current passage through a device is blocked at the critical spin-orbit coupling values determined by the system’s geometry. At the near-critical spin-orbit coupling values, electron transport is possible only in a narrow range of energies.

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Публикация на русском языке Вальков, Валерий Владимирович. Эффект полного отражения электронов от симметричного двухканального устройства с точками неаналитичности фермионных траекторий, вызванный спин-орбитальным взаимодействием Рашбы [Текст] / В. В. Вальков, А. Д. Федосеев // Изв. РАН. Сер. физич. - 2018. - Т. 82 № 5. - С. 622-625

Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Fedoseev, A. D.; Федосеев, Александр Дмитриевич; Вальков, Валерий Владимирович
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Fedoseev, A. D.
The edge states properties of the topological insulator with fermion path nonanalyticity points located at the edge / A. D. Fedoseev // J. Phys.: Condens. Matter. - 2020. - Vol. 32, Is. 21. - Ст. 215301, DOI 10.1088/1361-648X/ab73a9. - Cited References: 46. - The author thanks V V Val'kov and M M Korovushkin for the fruitful discussions and valuable remarks. The reported study was funded by the RAS Presidium program for fundamental research No. 32 'Nanostructures: physics, chemistry, biology and technology fundamentals', the Russian Foundation for Basic Research (project nos. 19-02-00348, 18-32-00443), Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research projects: 'Manifestation of Coulomb interactions and effects of restricted geometry in properties of topological edge states of nanostructures with spin–orbit coupling' (No. 18-42-243017), Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project no. MK-3722.2018.2) . - ISSN 0953-8984
Кл.слова (ненормированные):
Topological insulator -- Edge states -- Electron transport
Аннотация: The edge states properties of a finite-size 2D topological insulator (TI) with the open boundary conditions in both directions are studied. It is shown that fermion path nonanalyticity points appearing on the edge of finite-size TI cause a nonuniform edge state distribution along the TI edge. The character of this distribution depends substantially on the edge state's energy position in the bulk band gap. The edge state with the energy in the middle of the gap tends to be located in the corners between two nonparallel edges of the system, while the edge states with the energy close to the bulk band edge avoid the corners. The monotonic transition from one space distribution of the edge state wave function to another along the edge state's band is observed. The mentioned edge state's structure leads to the nonlinear current-voltage characteristic of the square-shaped TI with contacts connected with the corners of the device. It opens the possibility to control the current with the gate voltage and is useful for construction the nano-size devices. For the edge states with energy in the middle of a bulk gap, the vortex structure of the probability flux located near corners is found.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center Ksc Sb Ras, Akademgorodok 50/38, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Федосеев, Александр Дмитриевич
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