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Magnetic and electrical properties of bismuth cobaltite Bi24(CoBi)O40 with charge ordering / S. S. Aplesnin [и др.] // Phys. Solid State. - 2012. - Vol. 54, Is. 10. - P. 2005-2014, DOI 10.1134/S106378341210006X. - Cited References: 22. - This study was supported by the Russian Foundation for Basic Research (project nos. 09-02-92001-NNS_a, 12-02-00125-a, and 11-02-98004-r_sibir'_a) . - ISSN 1063-7834

РУБ Physics + Condensed Matter
Рубрики:
Thermoelectric-power
   Co3O4
   Conductivity
   Transition
Аннотация: The compound Bi24(CoBi)O40 has been synthesized using the solid-phase reaction method. The temperature and field dependences of the magnetic moment in the temperature range 4 K T 300 K and the temperature dependences of the EPR line width and g-factor at temperatures 80 K T 300 K have been investigated. The electrical resistivity and thermoelectric power have been measured in the temperature range 100 K T 1000 K. The activation energy has been determined and the crossover of the thermoelectric power from the phonon mechanism to the electron mechanism with variations in the temperature has been observed. The thermal expansion coefficient of the samples has been measured in the temperature range 300 K T 1000 K and the qualitative agreement with the temperature behavior of the electrical resistivity has been achieved. The electrical and structural properties of the compound have been explained in the framework of the model of the electronic-structure transition with inclusion of the exchange and Coulomb interactions between electrons and the electron-phonon interaction.

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Публикация на русском языке Магнитные и электрические свойства кобальтита висмута Bi24(CoBi)O40 с зарядовым упорядочением [Текст] / С. С. Аплеснин [и др.] // Физ. тверд. тела : Физико-технический институт им. А.Ф.Иоффе РАН, 2012. - Т. 54 Вып. 10. - С. 1882-1890

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Udod, L. V.; Удод, Любовь Викторовна; Sitnikov, M. N.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Gorev, M. V.; Горев, Михаил Васильевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; Galyas, A. I.; Yanushkevich, K. I.
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Magnetic and thermoelectric properties of the Mn1-X Ni (X) S solid solutions / G. Makovetskii [et al.] // J. Korean Phys. Soc. - 2013. - Vol. 62, Is. 12. - P. 2059-2062, DOI 10.3938/jkps.62.2059. - Cited References: 9. - This study was supported by the Russian Foundation for Basic Research project No. 09-02-92001-NNS_a; No.12-02-90004 Bel_a; No. 12-02-00125_a; No. 11-02-98018 r_sibir_a, F12R-060 . - ISSN 0374-4884

РУБ Physics, Multidisciplinary
Рубрики:
NICKEL SULPHIDE
TRANSITION
Кл.слова (ненормированные):
Antiferromagnetic materials -- Semiconductor conductivity -- Manganese sulphides
Аннотация: The new sulphide Mn1-X Ni (X) S (0 T (N) . The conductivity type change from the hole to the electronic at X > 0.05 is revealed on the basis of the thermoelectric power measurements. The resistivity and thermopower behaviors are explained in terms of the impurity subband formation into MnS electron excitation gap.

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Natl Acad Sci Belarus, GO NPTs Mat Sci Ctr, Minsk 220072, Byelarus
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia

Доп.точки доступа:
Makovetskii, G.; Аплеснин, Сергей Степанович; Demidenko, O. F.; Galyas, A.; Yanushkevich, K.; Aplesnin, S. S.; Romanova, O. B.; Романова, Оксана Борисовна; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна
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Magnetic and thermoelectric properties of the solid solutions Mn1-XNiXS / O. Romanova [et al.] // The 19th International Conference on Magnetism with Strongly Correlated Electron Systems : book of abstracts. - 2012. - P. 209
Аннотация:

Материалы конференции

Доп.точки доступа:
Romanova, O.; Романова, Оксана Борисовна; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Demidenko, O. F.; Makovetskii, G.; Yanushkevich, K. I.; Korean Physical Society; Korean Magnetics Society; International Union of Pure and Applied Physics; International conference on magnetism (19 ; 2012 ; Jul ; 8-13 ; Busan, Korea / Bexco, Korea)
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    Переход металл-диэлектрик в катион-замещенных соединениях ReхMn1-xS (Re = Gd, Sm, Ho) / О. Б. Романова [и др.] // Вестник СибГАУ. - 2015. - Т. 16, № 2. - С. 478-484. - Библиогр.: 38. - Работа выполнена при финансовой поддержке РФФИ № 15-42-04099 р_Cибирь_а и государственного задания № 114090470016. . - ISSN 1816-9724
   Перевод заглавия: Metal-insulator transition in the cation-substituted compounds RexMn1-xS (Re = Gd, Sm, Ho)
Кл.слова (ненормированные):
СУЛЬФИДЫ РЕДКОЗЕМЕЛЬНЫХ ЭЛЕМЕНТОВ -- ПРОВОДИМОСТЬ -- ПЕРЕХОД МЕТАЛЛ-ДИЭЛЕКТРИК -- ТЕРМОЭДС -- SULFIDES OF RARE-EARTH ELEMENTS -- CONDUCTIVITY -- TRANSITION METAL-INSULATOR -- THERMOELECTRIC POWER
Аннотация: Представлены результаты исследования транспортных свойств катион-замещенных сульфидов RexMn1-xS (Re = Gd, Sm, Ho) с ГЦК-решеткой типа NaCl в области температур 77-1200 К. С увеличением степени катионного замещения в этих соединениях RexMn1-xS (Re = Gd, Sm, Ho) изменяется тип проводимости от полупроводникового до металлического при критической концентрации Х С. Концентрационный переход металл-диэлектрик в системе Gd XMn 1-XS сопровождается уменьшением величины удельного электросопротивления на 12 порядков и коэффициента термоЭДС (α) на два порядка. Катионное замещение в твердых растворах GdxMn1-xS приводит к смене дырочного типа проводимости (α > 0), свойственного моносульфиду марганца, на электронный (α < 0). Уменьшение величины α с увеличением содержания гадолиния в решетке MnS указывает на то, что Gd действует как донорная примесь. Для Sm 0,2Mn 0,8S обнаружен резкий максимум сопротивления при Т = 100 К, который может быть вызван рассеянием электронов проводимости на спиновых флуктуациях локализованных электронов. Установлен металлический тип проводимости для Sm 0,25Mn 0,75S и механизм электрического сопротивления, который связан с рассеянием электронов на акустических фононах и с магнитным рассеянием на нескомпенсированных антиферромагнитных кластерах марганца при Т < 180 К. В результате замещения марганца самарием в твердом растворе SmxMn1-xS электронная структура перестраивается, и сопротивление невозможно объяснить на основе протекания ионов самария. Общей закономерностью температурных зависимостей коэффициента термоЭДС как для системы с гадолинием, так и для системы с самарием является проявление отрицательного значения термоЭДС во всем диапазоне температур с ростом Х. В системе HoxMn1-xS переход металл-диэлектрик обнаружен для ХС = 0,3 с уменьшением величины удельного электросопротивления на десять порядков. Цель данной работы - установить условия реализации перехода металл-диэлектрик в катион-замещенных системах RexMn1-xS (Re = Gd, Sm, Ho).
This paper presents the results of a study of the transport properties of cation-substituted sulfides Re XMn 1-XS (Re = = Gd, Sm, Ho) with FCC NaCl type in the temperature range 77-1200 K. With increasing degree of cation substitution in these compounds Re XMn 1- ХS (Re = Gd, Sm, Ho) the conductivity type changes from the semiconductor to the «metal» at the critical concentration X C. The concentration of metal-insulator transition in the system Gd XMn 1-XS is accompanied by a decreasing in the electrical resistivity of value on 12 orders and Seebeck coefficient (α) is on two orders. The cation-substitution in the solid solutions Gd XMn 1-XS leads to p-type conductivity (α > 0), as comprising to electronic (α < 0) for manganese monosulfide. Decrease of α with increasing gadolinium concentration in the MnS lattice indicates that the Gd acts as a donor impurity. For Sm 0,2Mn0,8S a maximum resistance at T = 100 K attributed to the scattering of conduction electrons by spin fluctuations of localized electrons. The metallic conductivity for Sm 0.25Mn 0.75S and the mechanism of electrical resistance, which is related to the scattering of electrons by acoustic phonons and magnetic scattering by uncompensated antiferromagnetic manganese clusters at T < 180 K were revealed. As a result of the substitution of manganese to samarium in solid solution Sm XMn 1-XS the electron structure is reconstructed, and the resistance cannot be explained on the basis of the percolation of samarium ions. The temperature dependence of Seebeck coefficient for systems with gadolinium and with samarium reveals the negative values of thermoelectric power in the all range of temperatures with increasing concentration (X). The metal-insulator transition for system Ho XMn 1-XS at Х С= 0,3 is observed with decreasing resistivity on ten orders. The purpose of this work is to establish conditions for the realization of the metal-insulator transition in a cation-substituted systems Re XMn 1-XS (Re = Gd, Sm, Ho).

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Держатели документа:
Институт физики им. Л. В. Киренского СО РАН
Сибирский государственный аэрокосмический университет имени акад. М. Ф. Решетнева

Доп.точки доступа:
Романова, Оксана Борисовна; Romanova, O. B.; Харьков, Анатолий Михайлович; Kharkov A. M.; Ситников, Максим Николаевич; Sitnicov M. N.; Кретинин, В. В.; Kretinin, V. V.
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Magnetic properties and the metal-insulator transition in GdXMn1-XS solid solutions / O. B. Romanova [et al.] // Solid State Commun. - 2010. - Vol. 150, Is. 13-14. - P. 602-604, DOI 10.1016/j.ssc.2009.12.042. - Cited References: 13. - This study was supported by the Russian Foundation for Basic Research project No. 09-02-00554_a; No. 09-02-92001-NNS_a; No. 08-02-90031 Bel_a and Belarus Foundation for Basic Research project No. F04-182; ADTF "Development of scientific potential of the higher school" No. 2.1.1/401. . - ISSN 0038-1098

РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
Insulator -- Metals -- Crystal growth -- Phase transitions -- Insulator -- Metals -- Crystal growth -- Phase transitions -- Insulator -- Metals -- Antiferromagnetic semiconductors -- Crystal growth -- Cubic lattice -- Metal-insulator phase transition -- Orders of magnitude -- P-type -- Temperature range -- Thermoelectric properties -- Thermopowers -- Antiferromagnetic materials -- Antiferromagnetism -- Crystal growth -- Crystallization -- Electric properties -- Gadolinium -- Grain boundaries -- Magnetic fields -- Magnetic properties -- Manganese -- Manganese compounds -- Metal insulator boundaries -- Metals -- Semiconductor growth -- Semiconductor insulator boundaries -- Sodium chloride -- Solid solutions -- Solidification -- Metal insulator transition
Аннотация: The structural, magnetic, electrical, and thermoelectric properties of GdXMn1-XS (0.01 <= X <= 0.3) solid solutions synthesized for the first time on the basis of alpha-MnS have been studied experimentally in the temperature range 77-1000 K in magnetic fields up to 10 kOe. The synthesized samples are antiferromagnetic semiconductors with an NaCl-type cubic lattice typical of a-MnS. Both concentration (X-c = 0.3) and temperature (T-c = 450 K) metal-insulator phase transitions have been observed. The concentration metal-insulator transition is accompanied by a decrease in resistivity and thermopower by twelve and two orders of magnitude, respectively, with the change in conductivity from p-type to n-type. (C) 2010 Elsevier Ltd. All rights reserved.

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Держатели документа:
[Romanova, O. B.
Ryabinkina, L. I.
Velikanov, D. A.
Balaev, D. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Sokolov, V. V.
Pichugin, A. Yu.] Russian Acad Sci, Inst Inorgan Chem, Siberian Branch, Novosibirsk 630090, Russia
[Galyas, A. I.
Demidenko, O. F.
Makovetskii, G. I.
Yanushkevich, K. I.] Natl Acad Sci Belarus, GO NPTs Mat Sci Ctr, Minsk 220072, Byelarus
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, 660036 Krasnoyarsk, Russian Federation
Institute of Inorganic Chemistry, Russian Academy of Sciences, Siberian Branch, 630090 Novosibirsk, Russian Federation
GO NPTs Materials Science Center, National Academy of Sciences of Belarus, 220072 Minsk, Belarus

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Sokolov, V. V.; Pichugin, A. Y.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Galyas, A. I.; Demidenko, O. F.; Makovetskii, G. I.; Yanushkevich, K. I.
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KARYAGIN, V. V.
DRAG THERMOELECTRIC-POWER OF A TWO-DIMENSIONAL ELECTRON-GAS IN A GAAS-GAAIAS HETEROSTRUCTURE / V. V. KARYAGIN, I. I. LYAPILIN, V. V. DYAKIN // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1988. - Vol. 22, Is. 8. - P. 954-955. - Cited References: 3 . - ISSN 0038-5700

РУБ Physics, Condensed Matter

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Доп.точки доступа:
LYAPILIN, I. I.; DYAKIN, V. V.
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DFT investigation of electronic structures and magnetic properties of halides family MeHal3 (Me=Ti, Mo,Zr,Nb, Ru, Hal=Cl,Br,I) one dimensional structures / A. A. Kuzubov [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 93-96, DOI 10.1016/j.jmmm.2016.12.054. - Cited References:16. - This work was supported by the Russian Science Foundation, Project no. 16-13-00060. N.S.M. thanks the Russian Foundation for Basic Research, project RFBR 16-32-60003 mol_a_dk, for the financial support of ZrIINF3/INF, TiIINF3/INF and NbIINF3/INF electronic structure calculations . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
INITIO MOLECULAR-DYNAMICS
TOTAL-ENERGY CALCULATIONS
AUGMENTED-WAVE
Кл.слова (ненормированные):
Transition metal trihalides -- Magnetic properties -- Thermoelectric -- conversion -- Density functional theory
Аннотация: Using DFT GGA calculations, electronic structure and magnetic properties of wide family of transition metal trihalides (TMHal3) (Zr, Ti and Nb iodides, Mo, Ru, Ti and Zr bromides and Ti or Zr chlorides) are investigated. These structures consist of transition metal atoms chains surrounded by halides atoms. Chains are connected to each other by weak interactions. All TMHal3 compounds were found to be conductive along chain axis except of MoBr3 which is indirect gap semiconductor. It was shown that NbI3 and MoBr3 have large magnetic moments on metal atoms (1.17 and 1.81 µB, respectively) but other TMHal3 materials have small or zero magnetic moments. For all structures ferromagnetic and anti-ferromagnetic phases have almost the same energies. The causes of these properties are debated.

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Доп.точки доступа:
Kuzubov, A. A.; Кузубов, Александр Александрович; Kovaleva, E. A.; Ковалева, Евгения Андреевна; Popova, M. I.; Kholtobina, A. S.; Mikhaleva, N. S.; Михалева, Наталья Сергеевна; Visotin, M. A.; Высотин Максим Александрович; Fedorov, A. S.; Федоров, Александр Семенович; Russian Science Foundation [16-13-00060]; Russian Foundation for Basic Research [RFBR 16-32-60003 mol_a_dk]; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
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Magnetic, dielectric and thermoelectric properties of Bi2Sn1.9Cr0.1O7 / L. V. Udod [et al.] // Moscow International Symposium on Magnetism (MISM-2017) : 1-7 July 2017 : book of abstracts. - 2017. - Ст. 4PO-I1-27. - P. 882

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Доп.точки доступа:
Udod, L. V.; Удод, Любовь Викторовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Yanushkevich, K. I.; Moscow International Symposium on Magnetism(7 ; 2017 ; Jul. ; Moscow); Московский государственный университет им. М.В. Ломоносова; Российский фонд фундаментальных исследований
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Aplesnin, S. S.
Electronic transition, ferroelectric and thermoelectric properties of bismuth pyrostannate Bi2(Sn0.85Cr0.15)2O7 / S. S. Aplesnin, L. V. Udod, M. N. Sitnikov // Ceram. Int. - 2018. - Vol. 44, Is. 2. - P. 1614-1620, DOI 10.1016/j.ceramint.2017.10.082. - Cited References: 41. - The authors would like to thank M. Molokeev for the clarification of x-ray spectra. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project № 16–52-00045 bel_a. . - ISSN 0272-8842
Кл.слова (ненормированные):
Dielectric properties -- Ferroelectric properties -- Impedance -- Thermopower -- Electrical properties
Аннотация: The ferroelectric properties of bismuth pyrostannate Bi2(Sn0.85Cr0.15)2O7 in the high-temperature region are established. The linear thermal expansion coefficient, electrical resistance, impedance, I−V characteristics, capacitance, loss-angle tangent, charge, and thermopower of the investigated material are measured in the temperature range of 300−700 K at frequencies of 102−106 Hz. Anomalies of the thermal expansion coefficient and hodograph spectrum variation in the region of polymorphic phase transitions are observed. The high resistance and change of the hopping conductivity for the tunnel-emission are found. The hysteresis in the electric field dependence of polarization is established. The change in the thermopower sign with temperature is revealed. The obtained experimental data are explained in the framework of the model of migration polarization by charged chromium ions.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok, 50, Krasnoyarsk, Russian Federation
Siberian State Aerospace University M. F. Reshetnev, Krasnoyarsky Rabochy Av. 31, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Udod, L. V.; Удод, Любовь Викторовна; Sitnikov, M. N.; Аплеснин, Сергей Степанович
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10.

Thermoelectric properties and cost optimization of spark plasma sintered n-type Si0.9Ge0.1 - Mg2Si nanocomposites / A. Usenko [et al.] // Scripta Mater. - 2018. - Vol. 146. - P. 295-299, DOI 10.1016/j.scriptamat.2017.12.019. - Cited References: 28. - This work was supported by Russian Science Foundation (project No. 16-13-00060). Part of the work (structural characterization of the samples) was carried out with financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS”. Partial support by Act 211 Government of the Russian Federation, contract # 02.A03.21.0011, is also acknowledged. . - ISSN 1359-6462
Кл.слова (ненормированные):
Cost optimization -- Lattice thermal conductivity -- Magnesium silicides -- Spark plasma -- Thermo-Electric materials -- Thermoelectric figure of merit -- Thermoelectric performance -- Thermoelectric properties
Аннотация: We report on thermoelectric properties of low Ge content n-type Si0.9Ge0.1–Mg2Si nanocomposite. Introduction of the Mg2Si phase into a SiGe matrix resulted in a dramatic drop of the lattice thermal conductivity beyond the previously reported lowest limit for SiGe alloys due to intensification of phonon scattering on SiGe–Mg2Si grain boundaries. For a sample doped with 1 at.% of Mg2Si, the peak value of thermoelectric figure of merit ZT reached ~ 0.8 at 800 °C. Sintered nanocomposites still exhibit high thermoelectric performance while being almost two times cheaper than Si0.8Ge0.2.

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Держатели документа:
National University of Science and Technology “MISiS”, Moscow, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
National Research South Ural State University, Chelyabinsk, Russian Federation

Доп.точки доступа:
Usenko, A.; Moskovskikh, D.; Korotitskiy, A.; Gorshenkov, M.; Zakharova, E.; Fedorov, A. S.; Федоров, Александр Семенович; Parkhomenko, Y.; Khovaylo, V.
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11.

Effect of A-site cation ordering on the thermoelectric properties of the complex cobalt oxides Gd1-xSrxCoO3-δ (x = 0.8 and 0.9) / V. A. Dudnikov [et al.] // Ceram. Int. - 2018. - Vol. 44, Is. 9. - P. 10299-10305, DOI 10.1016/j.ceramint.2018.03.037. - Cited References: 38. - This work was supported by the Russian Science Foundation , project no. 16-13-00060. . - ISSN 0272-8842
Кл.слова (ненормированные):
Substituted rare earth cobalt oxides -- Thermoelectric oxide materials -- Ordered and disordered states
Аннотация: The effect of substitution of Sr2+ ions for Gd3+ ions on the phase composition, electrical resistivity, thermoelectricity, and thermal conductivity of rare-earth cobalt oxides Gd1-xSrxCoO3-δ (x = 0.8 and 0.9) has been investigated. It has been determined that at the investigated strontium concentrations, the single-phase disordered nonstoichiometric cubic perovskites and superstructures with ordered Sr2+/Gd3+ ions and anion vacancies can be formed. The influence of ordering/disordering of Gd and Sr cations over crystal-lattice A- sites on the thermoelectric figure of merit and sample stability at high temperatures has been studied. The thermoelectric figure of merit of the disordered samples was found to exceed by far the analogous parameter of the ordered samples, which allows us to consider the disordering as a way of improving the thermoelectric parameters. Two contributions to the conductivities are discussed: high-temperature thermoactivation and low-temperatures variable range hopping. The parameters of the Mott electronic structure, including DOS N(εF), hopping energy ε (the energy of hopping conductivity activation), and hopping length Rh, have been estimated.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russian Federation
Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russian Federation

Доп.точки доступа:
Dudnikov, V. A.; Дудников, Вячеслав Анатольевич; Orlov, Yu. S.; Орлов, Юрий Сергеевич; Kazak, N. V.; Казак, Наталья Валерьевна; Fedorov, A. S.; Федоров, Александр Семенович; Solov'yov, L. A.; Vereshchagin, S. N.; Burkov, A. T.; Novikov, S. V.; Gavrilkin, S. Yu.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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12.

Fedorov, A. S.
Ab initio investigations of nanostructures for their application as nanostructured thermoelectric materials / A. S. Fedorov, M. A. Visotin // International school/workshop on actual problems of condensed matter physics : Program. Book of abstracts / ed. S. G. Ovchinnikov. - Norilsk, 2018. - P. 18 . - ISBN 978-5-904603-08-3

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Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Visotin, M. A.; Высотин, Максим Александрович; Федоров, Александр Семенович; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Research Institute of Agriculture and Ecology of the Arctic; Siberian Federal Univercity
}
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13.

The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films / S. S. Aplesnin [et al.] // Semicond. Sci. Technol. - 2018. - Vol. 33, Is. 8. - Ст. 085006, DOI 10.1088/1361-6641/aace44. - Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project No 18-52-00009 Bel_a; No 18-32-00079 mol_a; No 18-42-240001 r_a; the state order No 3.5743.2017/6.7. . - ISSN 0268-1242. - ISSN 1361-6641

РУБ Engineering, Electrical & Electronic + Materials Science,
Рубрики:
NEUTRON-SCATTERING
   SURFACE-STATES
   MNTE
   CONDUCTIVITY
   MECHANISM
Кл.слова (ненормированные):
polycrystalline films -- magnetoresistance -- impedance -- polaron -- magnetic -- properties -- thermoelectric
Аннотация: The correlation between the dc and ac electrical resistance and the structural, magnetic, and thermoelectric properties of polycrystalline MnSe1−X Te Х (0.3 ≤ X ≤ 0.4) manganese chalcogenide films in the temperature range of 80–400 K has been investigated. Inhomogeneous electronic states and transitions between them accompanied by structural lattice deformations have been found at temperatures including the Neel temperature region. The magnetic susceptibility maximum above the Neel temperature in a magnetic field of 8.6 kOe has been observed. Temperature ranges of the coexistence of two types of electrically inhomogeneous states have been established by impedance spectroscopy in the frequency range of 0.1–1000 kHz and the change of the hopping conductivity for diffusion one accompanied by the magnetic susceptibility minimum has been found. The magnetoresistance in magnetic fields of up to 12 kОе has been established. It has been revealed that the thermopower and magnetoresistance change its sign upon heating. The experimental data are explained using a spin polaron model with the localization of polarons and formation of the electron phase-separation. The alternation of magnetoresistance in sign is attributed to the ferromagnetic orbital ordering of electrons and the negative magnetoresistance is explained by suppression of spin fluctuations in a magnetic field.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarskii Rabochi Ave 31, Krasnoyarsk 660014, Russia.
Sci Pract Mat Res Ctr NAS Belarus, P Brovki Str 19, Minsk 220072, BELARUS.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Romanova, O. B.; Романова, Оксана Борисовна; Sitnikov, M. N.; Kretinin, V. V.; Galyas, A., I; Yanushkevich, K., I; Russian Foundation for Basic Research (RFBR) [18-52-00009 Bel_a, 18-32-00079 mol_a, 18-42-240001 r_a]; [3.5743.2017/6.7]
}
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14.

Thermoelectric properties of optically transparent thin films based on single-walled carbon nanotubes / I. A. Tambasov [et al.] // Fourth Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2018) : proceedings. - Vladivostok, 2018. - P. 88-89

Материалы конференции

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Voronin, A. S.; Evsevskaya, N. P.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Abelyan, S. R.; Tambasova, E. V.; Asian School-Conference on Physics and Technology of Nanostructured Materials(4 ; 2018 ; Sept. ; 23-28 ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(4 ; 2018 ; сент. ; 23-28 ; Владивосток); Институт автоматики и процессов управления ДВО РАН; Дальневосточный федеральный университет
}
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15.

    Thermoelectric properties and stability of the Re0.2Sr0.8CoO3-δ (Re = Gd, Dy) complex cobalt oxides in the temperature range of 300‒800 K / V. A. Dudnikov [et al.] // Ceram. Int. - 2019. - Vol. 45, Is. 5. - P. 5553-5558, DOI 10.1016/j.ceramint.2018.12.013. - Cited References: 38. - This study was supported by the Russian Science Foundation , project no. 16-13-00060 , Russia . - ISSN 0272-8842
   Перевод заглавия: Термоэлектрические свойства и стабильность Re0.2Sr0.8CoO3-δ (Re = Gd, Dy) сложных оксидов кобальта в температурном интервале 300-800 К
Кл.слова (ненормированные):
Substituted rare earth cobalt oxides -- Thermoelectric oxide materials -- Ordered and disordered states
Аннотация: Temperature dependences of the electrical resistivity and Seebeck coefficient of the Re0.2Sr0.8CoO3‒δ (Re = Gd, Dy) complex cobalt oxides in the temperature range of 300 – 800 K have been investigated. The effects of ordering in the cation and anion sublattices on the thermoelectric properties has been examined and their comparative analysis has been made. It was found that, in the investigated temperature range, the thermoelectric power factor of the ordered compounds significantly exceeds the analogous parameter of the disordered samples. The temperature dependence of the electrical resistivity was shown to obey the activation law. As the temperature increases, the samples undergo a semiconductor-semiconductor electronic transition with a decrease in the activation energy. The thermoelectric properties of all the samples are shown to be stable in the investigated temperature range. The maximum thermoelectric power factor of the ordered Dy0.2Sr0.8CoO2.67 cobaltite at a temperature of 360 K has been obtained; it amounts to 0.23 µW/(cm·K2), which is a good parameter for this class of materials.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center, Russian Academy of Sciences, Siberian Branch”, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, 660041, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center “Krasnoyarsk Scientific Center, Russian Academy of Sciences, Siberian Branch”, Krasnoyarsk, 660036, Russian Federation
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation

Доп.точки доступа:
Dudnikov, V. A.; Дудников, Вячеслав Анатольевич; Orlov, Yu. S.; Орлов, Юрий Сергеевич; Kazak, N. V.; Казак, Наталья Валерьевна; Fedorov, A. S.; Федоров, Александр Семенович; Solov'yov, L. A.; Vereshchagin, S. N.; Burkov, A. T.; Novikov, S. V.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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16.

Effect of oxygen nonstoichiometry on electrical conductivity and thermopower of Gd0.2Sr0.8FeO3-δ ferrite samples / V. Dudnikov [et al.] // Materials. - 2019. - Vol. 12, Is. 1. - Ст. 74, DOI 10.3390/ma12010074. - Cited References: 24 . - ISSN 1996-1944
Кл.слова (ненормированные):
Rare-earth-substituted cobalt oxides -- Stability -- Thermoelectric properties
Аннотация: The behavior of the resistivity and thermopower of the Gd0.2Sr0.8FeO3−δ ferrite samples with a perovskite structure and the sample stability in an inert gas atmosphere in the temperature range of 300–800 K have been examined. It has been established that, in the investigated temperature range, the thermoelectric properties in the heating‒cooling mode are stabilized at δ ≥ 0.21. It is shown that the temperature dependencies of the resistivity obtained at different δ values obey the activation law up to the temperatures corresponding to the intense oxygen removal from a sample. The semiconductor‒semiconductor electronic transitions accompanied by a decrease in the activation energy have been observed with increasing temperature. It is demonstrated that the maximum thermoelectric power factor of 0.1 µW/(cm·K2) corresponds to a temperature of T = 800 K.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center Krasnoyarsk Scientific Center, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center Krasnoyarsk Scientific Center, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Ioffe Institute, St. Petersburg, 194021, Russian Federation

Доп.точки доступа:
Dudnikov, V. A.; Дудников, Вячеслав Анатольевич; Orlov, Yu. S.; Орлов, Юрий Сергеевич; Fedorov, A. S.; Федоров, Александр Семенович; Solovyov, L.; Vereshchagin, S.; Burkov, A. T.; Novikov, S.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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17.

Structural and Thermoelectric Properties of Optically Transparent Thin Films Based on Single-Walled Carbon Nanotubes / I. A. Tambasov [et al.] // Phys. Solid State. - 2018. - Vol. 60, Is. 12. - P. 2649-2655, DOI 10.1134/S1063783418120296. - Cited References: 31. - This work was supported by the Russian Science Foundation (project no. 17-72-10079). . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter

Аннотация: Thin films have been produced via a spray method from commercially available single-walled carbon nanotubes (SWCNTs). A SWCNT film thickness has ranged from ~10 to ~80 nm. The SWCNT diameter has accepted values of 1.6–1.8 nm. The existence of SWCNTs longer than 10 μm is established. The optimal thickness of a SWCNT thin film is found to be ~15 nm at which the transmittance exceeds 85%. The specific resistance of SWCNT thin films goes from ~1.5 × 10–3 to ~3 × 10–3 Ohm cm at room temperature. The pioneering study of the temperature dependences of the Seebeck coefficient and surface resistance is performed for this type of SWCNT. A surface resistance is found to increase with rising temperature. Furthermore, the Seebeck coefficient of SWCNT thin films weakly depends on temperature. Its value for all samples is evaluated to be ~40 μV/K. According to the sign of the Seebeck coefficient, thin films exhibit hole-type conductivity. Moreover, the power factor of a 15-nm thin SWCNT-film decreases with a temperature increase to 140◦C from the value of approximately ~120 to ~60 μW m–1 K–2. A further rise in temperature has led to a gain in the power factor.

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Публикация на русском языке Структурные и термоэлектрические свойства оптически прозрачных тонких пленок на основе одностенных углеродных нанотрубок [Текст] / Тамбасов И.А. [и др.] // Физ. тверд. тела. - 2018. - Т. 60 Вып. 12. - С. 2456-2462

Держатели документа:
Russian Acad Sci, Siberian Branch, Inst Phys, Kransoyarsk, Russia.
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Kransoyarsk, Russia.
Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Kransoyarsk, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk, Russia.
Siberian Fed Univ, Krasnoyarsk, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Voronin, A. S.; Evsevskaya, N. P.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Fadeev, Yu. V.; Krylov, A. S.; Крылов, Александр Сергеевич; Aleksandrovskii, A. S.; Александровский, Александр Сергеевич; Luk'yanenko, A. V.; Лукьяненко, Анна Витальевна; Abelyan, S. R.; Абелян, Сергей Рубенович; Tambasova, E. V.; Russian Science Foundation [17-72-10079]
}
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18.

Thermoelectric properties of low-cost transparent single wall carbon nanotube thin films obtained by vacuum filtration / I. A. Tambasov [et al.] // Physica E. - 2019. - Vol. 114. - Ст. 113619, DOI 10.1016/j.physe.2019.113619. - Cited References: 53. - The study was carried out by a grant of Russian Science Foundation (project No. 17-72-10079). The electron microscopy examination was carried out at the Center for Collective Use of the Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences (Krasnoyarsk, Russia). V.A.E. and E.D.O. thank RFFI-18-32-00998_mol_a and RFFI-19-02-00859_a projects for support of development of two aqueous phase technique for nanotube separation. . - ISSN 1386-9477
Кл.слова (ненормированные):
Single-wall carbon nanotubes -- Aqueous two-phase extraction -- Semiconducting and metallic SWNTs -- Thin SWNT films -- Thermoelectric properties -- Thermoelectric figure of merit
Аннотация: The dispersions of semiconducting (sc-) and metallic (m-) SWCNTs with purity more than 98 and 86%, correspondingly, were obtained by using the aqueous two-phase extraction method. The unseparated (un-) SWCNTs contained ~3/4 of semiconducting and ~1/4 of metallic nanotubes. Thin films based on unseparated, semiconducting and metallic SWCNTs were prepared by vacuum filtration method. An Atomic Force Microscopy (AFM) and a Transmission Electronic Microscopy (TEM) were used to investigate the thin film microstructure. The thin SWCNT film transmittance was measured in the wavelength range of 300–1500 nm. Thermoelectric properties were carried out in the temperature range up to 200 °C. The largest Seebeck coefficient was observed for thin films based on semiconducting SWCNTs. The maximum value was 98 μV/K under the temperature of 170 °C. The lowest resistivity was 7.5·10−4·Ohm·cm at room temperature for thin un-SWCNT films. The power factor for m-SWCNT and un-SWCNT films was 47 and 213 μW m−1 K−2, correspondingly, at room temperature and 74 and 54 μW m−1 K−2 at 200 °C, respectively. For a thin sc-SWCNT film the maximum power factor was 2.8 μW m−1 K−2 at 160 °C. The un-SWCNT film thermal conductivity coefficient was 5.63 and 3.64 W m−1 K−1 and a thermoelectric figure of merit was 0.011 and 0.016 at temperatures of 23 and 50 °C, respectively.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC Siberian Branch of Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
Krasnoyarsk Scientific Center, Federal Research Center KSC Siberian Branch of Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC Siberian Branch of Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Sciences and Technologies, Krasnoyarsky Rabochy Avenue 31, Krasnoyarsk, 660037, Russian Federation
Siberian Federal University, Svobodny Avenue 79, Krasnoyarsk, 660041, Russian Federation
Prokhorov General Physics Institute of RAS, Vavilov Street 38, Moscow, 119991, Russian Federation
Moscow Institute of Physics and Technology, Institutskiy per.9, Dolgoprudny, Moscow Region, 141701, Russian Federation
Lobachevsky State University of Nizhny Novgorod, Gagarin Avenue 23/3, Nizhny Novgorod, 603950, Russian Federation

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Voronin, A. S.; Evsevskaya, N. P.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Fadeev, Y. V.; Simunin, M. M.; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Smolyarova, T. Е.; Abelian, S. R.; Абелян, Сергей Рубенович; Tambasova, E. V.; Gornakov, M. O.; Горнаков, М. О.; Eremina, V. A.; Kuznetsov, Y. M.; Dorokhin, M. V.; Obraztsova, E. D.
}
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19.

Structural, Optical, and Thermoelectric Properties of the ZnO:Al Films Synthesized by Atomic Layer Deposition / I. A. Tambasov [et al.] // Phys. Solid State. - 2019. - Vol. 61, Is. 10. - P. 1904-1909, DOI 10.1134/S1063783419100354. - Cited References: 33. - This study was supported by the Russian Science Foundation, project no. 17-72-10079. . - ISSN 1063-7834
Кл.слова (ненормированные):
atomic layer deposition -- thin films -- aluminum-doped zinc oxide -- structural and optical properties -- thermoelectric properties
Аннотация: Aluminum-doped zinc oxide thin films have been grown by atomic layer deposition at a temperature of 200°C. Using X-ray diffraction, it has been established that the ZnO:Al thin films exhibits the reflections from the (100), (002), (110), and (201) ZnO hexagonal phase planes. The (101) and (102) planes have also been detected by electron diffraction. The ZnO:Al thin films grow smooth with a root-mean-square roughness of Rq = 0.33 nm and characteristic nanocrystallite sizes of ~70 and ~15 nm without additional aluminum or aluminum oxide phases. The transmission at a wavelength of 550 nm with regard to the substrate has been found to be 96%. The refractive indices and absorption coefficients of the ZnO:Al thin films in the wavelength range of 250–900 nm have been determined. The maximum refractive indices and absorption coefficients have been found to be 2.09 at a wavelength of 335 nm and 0.39 at a wavelength of 295 nm, respectively. The optical band gap is 3.56 eV. The resistivity, Seebeck coefficient, and power factor of the ZnO:Al thin films are ∼1.02 × 10–3 Ω cm, –60 μV/K, and 340 μW m–1 K–2 at room temperature, respectively. The maximum power factor attains 620 μW m–1 K–2 at a temperature of 200°C.

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Публикация на русском языке

Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Institute of Chemistry and Chemical Technology, Krasnoyarsk Scientific Center, Siberian Branch,Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Voronin, A. S.; Evsevskaya, N. P.; Евсевская, Н. П.; Masyugin, A. N.; Масюгин, Альберт Николаевич; Aleksandrovskii, A. S.; Александровский, Александр Сергеевич; Smolyarova, T. E.; Nemtsev, I. V.; Немцев, Иван Васильевич; Lyashchenko, S. A.; Лященко, Сергей Александрович; Bondarenko, G. N.; Tambasova, E. V.
}
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20.

Investigation of microstrip ultra-wideband bandpass filters / B. A. Belyaev, S. A. Khodenkov, N. A. Shepeta [et al.] // J. Phys. Conf. Ser. - 2020. - Vol. 1488, Is. 1. - Ст. 012012DOI 10.1088/1742-6596/1488/1/012012. - Cited References: 16. - This study was supported by the Ministry of Education and Science of the Russian Federation, State assignment
Кл.слова (ненормированные):
Bandpass filters -- Bandwidth -- Control systems -- Microwave filters -- Resonators -- Thermoelectric equipment -- Ultra-wideband (UWB)
Аннотация: Ultra-wideband microwave filters with high frequency-selective properties have been developed by means of electrodynamic numerical analysis of 3D models. Microstrip structures, which are studied theoretically and experimentally, use one multimode resonator and a pair of single-mode resonators. There is fairly good agreement between the calculated data and the data taken on the experimental sample. The relative bandwidth of the manufactured microstrip filter is 60%.

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Держатели документа:
Electrodynamics and Microwave Electronics Laboratory, Kirensky Institute of Physics, 38 bld., Krasnoyarsk 50, Akademgorodok, 660036, Russian Federation
Department of Radiophysics and Special Radioelectronic Devices, Reshetnev Siberian State University of Science and Technology, 31 Krasnoyarsky Rabochy Av., Krasnoyarsk, 660037, Russian Federation
Department of Electronics and Telecommunications, Reshetnev Siberian State University of Science and Technology, 31 Krasnoyarsky Rabochy Av., Krasnoyarsk, 660037, Russian Federation

Доп.точки доступа:
Belyaev, B. A.; Беляев, Борис Афанасьевич; Khodenkov, S. A.; Shepeta, N. A.; Chyurikova, T. I.; Malyshev, D. O.; International Scientific Conference on Electronic Devices and Control Systems(20-22 November 2019 ; Tomsk, Russian Federation)
}
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