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A way for targeted synthesis of higher manganese silicides: a new Mn17Si30 phase and its distinctive features / I. A. Tarasov [et al.] // Nanostructures: physics and technology : proc. 26th Int. symp. - 2018. - P. 209-210. - Cited References: 3 . - ISBN 978-985-7202-35-5

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Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Высотин, Максим Александрович; Solovyov, L. A.; Соловьев, Леонид Александрович; Fedorov, A. S.; Федоров, Александр Семенович; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Nanostructures: Physics and Technology, International Symposium(26 ; 2018 ; June ; 18-22 ; Minsk, Belarus); Институт физики им. Б. И. Степанова НАН Беларуси; Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук; Физико-технический институт им. А.Ф. Иоффе РАН; Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук
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A way for targeted synthesis of higher manganese silicides: a new Mn17Si3O phase and its distinctive features / I. A. Tarasov [et al.] // International school/workshop on actual problems of condensed matter physics : Program. Book of abstracts / ed. S. G. Ovchinnikov. - Norilsk, 2018. - P. 14-15 . - ISBN 978-5-904603-08-3

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Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Высотин, Максим Александрович; Kuznetsova, T. V.; Solovyov, L. A.; Соловьев, Леонид Александрович; Fedorov, A. S.; Федоров, Александр Семенович; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Research Institute of Agriculture and Ecology of the Arctic; Siberian Federal Univercity
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Analysis of optical and magnetooptical spectra of Fe5Si3 and Fe3Si magnetic silicides using spectral magnetoellipsometry / S. A. Lyashchenko [et al.] // J. Exp. Theor. Phys. - 2015. - Vol. 120, Is. 5. - P. 886-893, DOI 10.1134/S1063776115050155. - Cited References:31. - This study was financially supported by the Ministry of Education and Science of the Russian Federation (state assignment no. 16.663.2014K, agreement no. 14.604.21.0002 (RFMEFI60414X0002), and contract no. 02.G25.31.0043), the Program is Support of Leading Scientific Schools (project no. NSh-2886.2014.2), and the Russian Foundation for Basic Research (project nos. 13-02-01265 and 14-02-31309). . - ISSN 1063. - ISSN 1090-6509. -

РУБ Physics, Multidisciplinary
Рубрики:
INITIO MOLECULAR-DYNAMICS
   AUGMENTED-WAVE METHOD
   FILMS
   ELLIPSOMETRY
Аннотация: The optical, magnetooptical, and magnetic properties of polycrystalline (Fe5Si3/SiO2/Si(100)) and epitaxial Fe3Si/Si(111) films are investigated by spectral magnetoellipsometry. The dispersion of the complex refractive index of Fe5Si3 is measured using multiangle spectral ellipsometry in the range of 250–1000 nm. The dispersion of complex Voigt magnetooptical parameters Q is determined for Fe5Si3 and Fe3Si in the range of 1.6–4.9 eV. The spectral dependence of magnetic circular dichroism for both silicides has revealed a series of resonance peaks. The energies of the detected peaks correspond to interband electron transitions for spin-polarized densities of electron states (DOS) calculated from first principles for bulk Fe5Si3 and Fe3Si crystals.

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Публикация на русском языке Исследование оптических и магнитооптических спектров магнитных силицидов Fe5Si3 и Fe3Si методом спектральной магнитоэллипсометрии [Текст] / С. А. Лященко [и др.] // Журн. эксперим. и теор. физ. : Наука, 2015. - Т. 147 Вып. 5. - С. 1023–1031

Держатели документа:
Reshetnikov Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia.
Russian Acad Sci, Inst Automat & Control Proc, Far East Branch, Vladivostok 690041, Russia.
Far Eastern State Transport Univ, Khabarovsk 680021, Russia.

Доп.точки доступа:
Lyashchenko, S. A.; Лященко, Сергей Александрович; Popov, Z. I.; Попов, Захар Иванович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Popov, E. A.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Kuzubov, A. A.; Кузубов, Александр Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Shamirzaev, T. S.; Latyshev, A. V.; Saranin, A. A.; Ministry of Education and Science of the Russian Federation [16.663.2014K, 14.604.21.0002 (RFMEFI60414X0002), 02.G25.31.0043]; Russian Foundation for Basic Research [13-02-01265, 14-02-31309]
}
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Anomalous hall effect in an epitaxial Mn5Ge3 thin film on Si(111) / M. V. Rautskii, I. A. Yakovlev, S. N. Varnakov, A. S. Tarasov // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect. : Spintronics and magnetic nanostructures. - Ст. A.P34. - P. 163-164. - Cited References: 5. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory . - ISBN 978-5-94469-051-7

Материалы симпозиума, ,
Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \program com.\; Овчинников, Сергей Геннадьевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
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Approach to form planar structures based on epitaxial Fe1 − xSix films grown on Si(111) / A. S. Tarasov [et al.] // Thin Solid Films. - 2017. - Vol. 642. - P. 20-24, DOI 10.1016/j.tsf.2017.09.025. - Cited References: 29. - We thank V.S. Zhigalov for assistance with the electron microscopy studies. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects Nos. 16-42-243046, 16-42-242036 and 16-42-243060. The work was also supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 7559.2016.2). . - ISSN 0040-6090
Кл.слова (ненормированные):
Iron silicides -- Wet etching -- Planar structures -- MOKE microscopy
Аннотация: An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron‑silicon alloy films with different silicon content (x = 0–0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
M.V.Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russian Federation

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, I. A.; Тарасов, Иван Анатольевич; Bondarev, I. A.; Бондарев, Илья Александрович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Kosyrev, N. N.; Косырев, Николай Николаевич; Komarov, V. A.; Комаров, Василий Андреевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Solovyov, L. A.; Соловьев, Леонид Александрович; Shemukhin, A. A.; Чемухин, А. А.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Volkov, N. V.; Волков, Никита Валентинович
}
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Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties / A. S. Tarasov, I. A. Tarasov, I. A. Yakovlev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст. 131, DOI 10.3390/nano12010131. - Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991

РУБ Chemistry, Multidisciplinary + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
FILMS
   ANISOTROPY
   SI(001)
   DEVICES
   SURFACE
   GROWTH
Кл.слова (ненормированные):
iron silicide -- germanium -- molecular beam epitaxy -- epitaxial stress -- lattice distortion -- dislocation lattices -- FMR -- Rutherford backscattering -- spintronics
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
RAS, Boreskov Inst Catalysis SB, Synchrotron Radiat Facil SKIF, Nikolskiy Prospekt 1, Koltsov 630559, Russia.
Immanuel Kant Balt Fed Univ, REC Smart Mat & Biomed Applicat, Kaliningrad 236041, Russia.
Immanuel Kant Balt Fed Univ, REC Funct Nanomat, Kaliningrad 236016, Russia.
Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany.
Univ Duisburg Essen, Ctr Nanointegrat, D-47057 Duisburg, Germany.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, Dmitriy D.; Goikhman, Aleksandr Yu.; Belyaev, B. A.; Беляев, Борис Афанасьевич; Baron, F. A.; Барон, Филипп Алексеевич; Shanidze, Lev V.; Шанидзе, Лев Викторович; Farle, M.; Фарле, Михаель; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
}
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Auger electron spectroscopy of thin Cr2GeC films / T. A. Andryushchenko, S. A. Lyaschenko, S. N. Varnakov [et al.] // Phys. Met. Metallogr. - 2023. - Vol. 124, Is. 14. - P. 1776-1782, DOI 10.1134/S0031918X2360135X. - Cited References: 33. - The research was supported by the Russian Science Foundation (grant no. 21-12-00226, http://rscf.ru/project/21-12-00226/) . - ISSN 0031-918X. - ISSN 1555-6190
Кл.слова (ненормированные):
МАХ phases -- chromium germanides -- epitaxial thin films -- Auger electron spectroscopy -- magnetron sputtering co-deposition
Аннотация: Auger electron spectroscopy was used to determine the phase composition of Cr2GeC MAX phase thin films. A distinctive feature of the formation of carbon-containing MAX phases is the shape of carbon Auger peaks, which is characteristic of metal carbides spectra. Features of the Auger spectra in the presence of secondary phases of chromium germanides are found. Their presence can manifest itself in an increase in the energy of the germanium peaks, which is caused by a chemical shift during the formation of the Cr–Ge bond. Moreover, we have detected the accumulation of electronic charge, which can be explained by the features of the surface morphology.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036, Krasnoyarsk, Russia

Доп.точки доступа:
Andryushchenko, T. A.; Андрющенко, Татьяна Александровна; Lyashchenko, S. A.; Лященко, Сергей Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Nemtsev, I. V.; Немцев, Иван Васильевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Shevtsov, D. V.; Шевцов, Дмитрий Валентинович; Maximova, O. A.; Максимова, Ольга Александровна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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Biocompatible nanostructures fabricated by Dip-Pen nanolithography / T. E. Smolyarova, A. S. Tarasov, A. V. Lukyanenko [et al.] // Molecular Therapy - Nucleic Acids : book of abstracts of the 1st Int. conf. "Aptamers in Russia 2019". - 2019. - Vol. 17, Suppl. 1. - P. 8-9

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Доп.точки доступа:
Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Shanidze, L. V.; Шанидзе, Лев Викторович; Yakovlev, I. A.; Яковлев, Иван Александрович; Volkov, N. V.; Волков, Никита Валентинович; Aptamers in Russia, international conference(1 ; 2019 ; Aug. 27-30 ; Krasnoyarsk)
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Biosensors based on nanowire field effect transistors with Schottky contacts / T. E. Smolyarova [et al.] // J. Phys.: Conf. Ser. - 2019. - Vol. 1410. - Ст. 012013, DOI 10.1088/1742-6596/1410/1/012013. - Cited References: 29. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035 and supported in part by the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences, project II.8.70, and the Presidium of the Russian Academy of Sciences, Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies». . - ISSN 1742-6588. - ISSN 1742-6596

РУБ Crystal growth and structural properties of semiconductor materials and nanostructures

Аннотация: A top-down nanofabrication approach was used to obtain silicon nanowires from silicon-on-insulator wafers using direct-write electron beam lithography and plasma-reactive ion etching. Fabricated with designed pattern silicon nanowires are 0.4, 0.8, 2 μm in width and 100 nm in height. The devices can be applied in future medical diagnostic applications as novel biosensors with detection principle based on the changes in electrical characteristics of the silicon nanowires functionalized with thiol-containing molecules.

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Держатели документа:
Krasnoyarsk Science Center SB RAS, Krasnoyarsk 660036, Russia
Kirensky Institute of Physics, Krasnoyarsk 660036, Russia
Siberian Federal University, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Smolyarova, T. E.; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, L. V.; Baron, F. A.; Барон, Филипп Алексеевич; Zelenov, F. V.; Зеленов, Ф. В.; Yakovlev, I. A.; Яковлев, Иван Александрович; Volkov, N. V.; Волков, Никита Валентинович; International School and Conference on optoelectronics, photonics, engineering and nanostructures(6 ; 2019 ; 22-25 April ; Saint Petersburg)
}
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10.

Composition and morphology of Fe-Si interfaces and (Fe/Si)3 multilayer nanostructures / J. Bartolomé [и др.] // 20th Int. Conf. on Magnetism (ICM-2015) : book of abstracts. - 2015. - Ст. WE.J.2_I1

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Доп.точки доступа:
Bartolomé, J.; Badía-Romano, L.; Rubín, J. ; Bartolomé, F.; Magén, C.; Bürgler, D. E.; Rubio-Zuazo, J.; Castro, G. R. ; Varnakov, S. N.; Варнаков, Сергей Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Platunov, M. S.; Платунов, Михаил Сергеевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International Conference on Magnetism(20 ; 2015 ; Jul ; 5-10 ; Barselona, Spain)
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11.

Crystal structure investigation of Cr2GeC MAX-phase nanofilms by RHEED / S. A. Lyashchenko, T. A. Andryushchenko, I. A. Yakovlev, S. N. Varnakov // V International Baltic Conference on Magnetism. IBCM : Book of abstracts. - 2023. - P. 125. - Cited References: 2. - РНФ № 21-12-00226

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Доп.точки доступа:
Lyashchenko, S. A.; Лященко, Сергей Александрович; Andryushchenko, T. A.; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; International Baltic Conference on Magnetism(5 ; 2023 ; Aug. 20-24 ; Svetlogorsk, Russia); Балтийский федеральный университет им. И. Канта
}
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12.

Data processing algorithms for magneto-optical ellipsometry of thin films with optical uniaxial anisotropy / O. A. Maximova, S. A. Lyashchenko, I. A. Yakovlev [et al.] // V International Baltic Conference on Magnetism. IBCM : Book of abstracts. - 2023. - P. 126. - Cited References: 5. - РНФ № 21-12-00226

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Siberian Federal University

Доп.точки доступа:
Maximova, O. A.; Максимова, Ольга Александровна; Lyashchenko, S. A.; Лященко, Сергей Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Shvetsov, D. V.; Andryushchenko, T. A.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International Baltic Conference on Magnetism(5 ; 2023 ; Aug. 20-24 ; Svetlogorsk, Russia); Балтийский федеральный университет им. И. Канта
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13.

    Development of in situ magneto-ellipsometry for studying correlation between the optical and magneto-optical properties of ferromagnetic thin films / O. A. Maximova [et al.] // J. Phys.: Conf. Ser. - 2017. - Vol. 903. - Ст. 012060, DOI 10.1088/1742-6596/903/1/012060. - Cited References:7. - The work was supported partly by the Russian Foundation for Basic Research Grant No. 16-32-00209 mol_a, Grant No. 14-02-01211, Grant No. 16-42-24083; the Complex program of SB RAS No II.2P, project 0358-2015-0004; the Ministry of Education and Science of the RF (State task No. 16.663.2014 kappa); Grant of the President of the Russian Federation (Scientific School No. 7559.2016.2).
   Перевод заглавия: Развитие метода in situ магнитоэллипсометрии для изучения корреляции между оптическими и магнитооптическими свойствами ферромагнитных тонких пленок

РУБ Physics, Applied + Physics, Condensed Matter

Аннотация: In this work we present the way of nanostructured films study by means of magneto-ellipsometry. The method of interpretation of in situ magneto-optical ellipsometry spectra from the in situ molecular beam epitaxy setup with an integrated magneto-ellipsometric real time synthesis control is described. The method has been successfully tested on Fe/SiO2/Si nanostructures within the model of a homogeneous semi-infinite medium. As a result, the dielectric tensor components for Fe layer were calculated using a developed approach.

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Доп.точки доступа:
Maximova, O. A.; Максимова, Ольга Александровна; Kosyrev, N. N.; Косырев, Николай Николаевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Lyashchenko, S. A.; Лященко, Сергей Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Maximova, O. M.; Shevtsov, D. V.; Шевцов, Дмитрий Валентинович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research [16-32-00209 mol_a, 14-02-01211, 16-42-24083]; Complex program of SB RAS [II.2P, 0358-2015-0004]; Ministry of Education and Science of the RF [16.663.2014kappa]; Grant of the President of the Russian Federation [7559.2016.2]; Joint European Magnetic Symposia(8 ; 2016 ; 21-26 Aug. ; Glasgow, UK)
}
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14.

Development of techniques for processing data from magneto-ellipsometry measurements / O. A. Maximova [et al.] // Fourth Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2018) : proceedings / progr. com. S. G. Ovchinnikov [et al.]. - 2018. - Ст. IV.25.05p. - P. 180 . - ISBN 978-5-7444-4368-9
Аннотация: The approach to data processing for layered thin films with a ferromagnet layer is proposed for studying optical and magneto- optical properties. The scope and applicability of models which describe reflective layered structures are studied in order to recommend the best model choice for each case. A significant effect of penetration depth on this choice was observed.

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Доп.точки доступа:
Ovchinnikov, S. G. \progr. com.\; Овчинников, Сергей Геннадьевич; Maximova, O. A.; Максимова, Ольга Александровна; Lyashchenko, S. A.; Лященко, Сергей Александрович; Shevtsov, D. V.; Шевцов, Дмитрий Валентинович; Yakovlev, I. A.; Яковлев, Иван Александрович; Ovchinnikov, S. G.; Asian School-Conference on Physics and Technology of Nanostructured Materials(4 ; 2018 ; Sept. ; 23-28 ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(4 ; 2018 ; сент. ; 23-28 ; Владивосток); Институт автоматики и процессов управления ДВО РАН; Дальневосточный федеральный университет
}
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15.

Effect of chemical ordering on optical properties of Fe3Si epitaxial films / I. Tarasov [et al.] // EPJ Web Conf. - 2018. - Vol. 185: Moscow International Symposium on Magnetism (MISM 2017). - Ст. 03014, DOI 10.1051/epjconf/201818503014. - Cited References: 10. - The reported study was funded by Russian Foundation for Basic Research, oG vernment of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects oN . 16 -42-243060, 16 -42-243035 and the President of the Russia Federation Program (SP-3382.2016.3 ), RFBR (Grant s oN . 16 -32-00291 and 17-42-190308) . eW also thank Solovyov L.A. for help in XRD analysis.
Рубрики:
Magnetic Nanostructures and Low Dimensional Magnetism
Аннотация: Optical characteristics (electron energy loss function, optical conductivity σ, permittivity ε, refractive index n, extinction coefficient k, and absorption coefficient α) of a 30 nm thick epitaxial Fe3Si iron silicide films grown at different silicon substrate temperature (26, 100, 200, 300 ˚C) were determined within E = 0.74–6.46 eV photon energy range using spectroscopic ellipsometry technique. The experimental data are compared to the optical characteristics calculated in the framework of the density functional theory using the GGA–PBE approximation. Variations of the optical characteristics spectra are discussed from the point of view of chemical ordering of DO3 type crystal structure. It is asserted that the electron energy-loss function, optical conductivity and extinction coefficient of the Fe3Si iron silicide films undergo noticeable changes in different spectral ranges over the whole spectrum between 0.74 and 6.46 eV due to variation in the chemical order. Information on the effect of chemical ordering on the optical properties obtained here allows one to carry out quick qualitative analysis of Fe3Si film crystal quality during the synthesis procedures by ellipsometry method in situ.

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Держатели документа:
Federal Research Center KSC Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
National University of Science and Technology MISiS, Moscow, 11999, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Popov, Z.; Visotin, M. A.; Высотин, Максим Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Moscow International Symposium on Magnetism(7 ; 2017 ; Jul. ; Moscow)
}
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16.

    Effect of electron correlations on the Fe3Si and α- FeSi2 band structure and optical properties / I. Sandalov [et al.] // Phys. Rev. B. - 2015. - Vol. 92, Is. 20. - Ст. 205129, DOI 10.1103/PhysRevB.92.205129. - Cited References:69. - The theoretical part of this work was supported by Russian Fund of Basic Research, Grant No. 14002-00186 and the President of Russia Grants No. 2886.2014.2 and No. 924.2014.2 for support of Leading Scientific School. The calculations were performed with the computer resources of NRC "Kurchatov Institute" (ui2.computing.kiae.ru). The experimental work was supported by Russian Fund of Basic Research, Grant No. 13-02-01265. I.S. thanks A. Ruban for useful discussion. . - ISSN 1098-0121. - ISSN 1550-235X
   Перевод заглавия: Влияние электронных корреляций на зонную структуру и оптические свойства Fe3Si и alpha-FeSi2

РУБ Physics, Condensed Matter
Рубрики:
DENSITY-FUNCTIONAL THEORY
   TOTAL-ENERGY CALCULATIONS
   AUGMENTED-WAVE METHOD
   BASIS-SET
   METALS
   ABSORPTION
   EMISSION
   SURFACES
   ALLOYS
   LAYERS
Аннотация: We use the Vienna ab initio simulation package (vasp) for evaluation of the quasiparticle spectra and their spectral weights within Hedin's GW approximation (GWA) for Fe3Si and α-FeSi2 within the non-self-consistent one-shot approximation G0W0 and self-consistent scGWA with the vertex corrections in the particle-hole channel, taken in the form of two-point kernel. As input for G0W0, the band structure and wave functions evaluated within the generalized gradient corrected local-density approximation to density functional theory (GGA) have been used. The spectral weights of quasiparticles in these compounds deviate from unity everywhere and show nonmonotonic behavior in those parts of bands where the delocalized states contribute to their formation. The G0W0 and scGWA spectral weights are the same within 2%–5%. The scGWA shows a general tendency to return G0W0 bands to their GGA positions for the delocalized states, while in the flat bands it flattens even more. Variable angle spectroscopic ellipsometry measurements at T=296 K on grown single-crystalline ∼50-nm-thick films of Fe3Si on n-Si(111) wafer have been performed in the interval of energies ω∼(1.3–5) eV. The comparison of G0W0 and scGW theory with experimental real and imaginary parts of permittivity, refractive index, extinction and absorption coefficients, reflectivity, and electron energy loss function shows that both G0W0 and scGW qualitatively describe experiment correctly, the position of the low-energy peaks is described better by the scGW theory, however, its detailed structure is not observed in the experimental curves. We suggest that the angle-resolved photoemission spectroscopy experiments, which can reveal the fine details of the quasiparticle band structure and spectral weights, could help to understand (i) if the scGWA with this type of vertex correction is sufficiently good for description of these iron silicides and, possibly, (ii) why some features of calculated permittivity are not seen in optical experiments.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radioelect, Krasnoyarsk 660041, Russia.
Siberian Aerosp Univ, Inst Space Investigat & High Technol, Krasnoyarsk 660037, Russia.
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Sandalov, I. S.; Сандалов, Игорь Семёнович; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Solovyov, L. A.; Соловьев, Леонид Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Fund of Basic Research [14002-00186, 13-02-01265]; President of Russia Grants [2886.2014.2, 924.2014.2]
}
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17.

Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) / I. A. Tarasov [et al.] // Физ. и техника полупроводников. - 2018. - Т. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Вып. 5. - с. 523, DOI 10.21883/FTP.2018.05.45867.56. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects no. 16-42-243060 and 16-42-243035 and Russian Foundation for Basic Research, Government of the Republic of Khakassia, research project no. 17-42-190308. We also thank L.A. Solovyov for his assistance in XRD analysis. . - ISSN 0015-3222
Аннотация: Self-assembled growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)-or (111)-textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi2(001)/Si(100) and α-FeSi2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi2/p-Si interfaces.

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"Переводная" версия Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) [Текст] / I. A. Tarasov [et al.] // Semiconductors. - 2018. - Vol. 52 : 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia) Is. 5.- P.654-659

Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243060, 16-42-243035]; Russian Foundation for Basic Research, Government of the Republic of Khakassia [17-42-190308]; International Symposium on Nanostructures - Physics and Technology(25th ; Jun 26-30, 2017 ; Saint Petersburg, Russia)
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18.

Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) / I. A. Tarasov [et al.] // Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P. 654-659, DOI 10.1134/S1063782618050330. - Cited References:31. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects no. 16-42-243060 and 16-42-243035 and Russian Foundation for Basic Research, Government of the Republic of Khakassia, research project no. 17-42-190308. We also thank L.A. Solovyov for his assistance in XRD analysis. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter
Рубрики:
BETA-FESI2 THIN-FILMS
   LOW-TEMPERATURE
   GROWTH
   FESI2
   SI(100)
   SI(111)
Аннотация: Self-assembled growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)-or (111)-textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi2(001)/Si(100) and α-FeSi2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi2/p-Si interfaces.

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Публикация на "русском языке" Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) [Текст] / I. A. Tarasov [et al.] // Физ. и техника полупроводников. - 2018. - Т. 52 : 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia) Вып. 5.- с.523

19.

Effect of interfaces in the multilayer structures on the electronic states / S. G. Ovchinnikov, O. A. Maximova, S. A. Lyashchenko [et al.] // International workshop on the properties of functional MAX-materials (2nd FunMax) : book of abstracts / org. com. M. Farle [et al.]. - 2021. - P. 15

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Доп.точки доступа:
Farle, M. \org. com.\; Ovchinnikov, S. G. \org. com.\; Овчинников, Сергей Геннадьевич; Tarasov, A. S. \org. com.\; Тарасов, Антон Сергеевич; Smolyarova, T. E. \org. com.\; Смолярова, Татьяна Евгеньевна; Ovchinnikov, S. G.; Maximova, O. A.; Максимова, Ольга Александровна; Lyashchenko, S. A.; Лященко, Сергей Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; International workshop on functional MAX-materials(2 ; 2021 ; Sept. 14-17 ; Krasnoyarsk (on-line)); Kirensky Institute of Physics; Siberian Federal Univercity
}
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20.

    Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device / D. Smolyakov, A. Tarasov, L. Shanidze [et al.] // Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст. 2100459, DOI 10.1002/pssa.202100459. - Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886 . - ISSN 1862-6300. - ISSN 1862-6319
   Перевод заглавия: Влияние магнитного и электрического полей на сопротивление на переменном токе транзисторного устройства на основе кремния на изоляторе

РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
NANOSTRUCTURES
Кл.слова (ненормированные):
impurities states -- magnetoimpedance -- magnetoresistance -- pseudo-MOSFET -- semiconductors -- SOI structure -- transistor
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Pr Svobodny 79, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, Lev; Шанидзе, Лев Викторович; Bondarev, I. A.; Бондарев, Илья Александрович; Baron, F. A.; Барон, Филипп Алексеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
}
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