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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
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Gavrichkov, V. A.
An impurity resistivity of doped manganese perovskites / V. A. Gavrichkov, S. G. Ovchinnikov // Physica B. - 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P. 828-830, DOI 10.1016/S0921-4526(98)00875-8. - Cited References: 4 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:

Кл.слова (ненормированные):
manganese perovskites -- mobility -- linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H-->0) = 0 for T > T(c) to linear dR/dH\(H-->0) for T < T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
}
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ALEKSEEV, K. N.
CHAOTIC DYNAMICS IN LIGHT IMPURITY CENTER INTERACTION / K. N. ALEKSEEV, N. V. ALEKSEEVA // Phys. Lett. A. - 1992. - Vol. 162, Is. 1. - P. 82-85, DOI 10.1016/0375-9601(92)90965-O. - Cited References: 26 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary
Рубрики:
QUANTUM OPTICS
CRYSTALS
Аннотация: Interaction of an impurity center in crystal with light and crystal lattice vibrations is considered. Conditions of the transition to Hamiltonian chaos have been obtained for the case of strong and resonant electron-phonon coupling.

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Держатели документа:
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russia, Russian Federation
ИФ СО РАН

Доп.точки доступа:
ALEKSEEVA, N. V.
}
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Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth / V. A. Shestakov, M. M. Korshunov, Y. N. Togushova, O. V. Dolgov // Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст. 075008, DOI 10.1088/1361-6668/abff6f. - Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007. . - ISSN 0953-2048. - ISSN 1361-6668

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
ORDER-PARAMETER
   IMPURITIES
   SUPERCONDUCTORS
   STATES
   MODEL
Кл.слова (ненормированные):
unconventional superconductors -- iron pnictides -- iron chalcogenides -- impurity scattering -- penetration depth
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
RAS, PN Lebedev Phys Inst, Moscow 119991, Russia.
Donostia Int Phys Ctr, San Sebastian 20018, Spain.

Доп.точки доступа:
Shestakov, V. A.; Шестаков, Вадим Андреевич; Korshunov, M. M.; Коршунов, Максим Михайлович; Togushova, Yu. N.; Тогушова Ю. Н.; Dolgov, O., V; Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
}
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    Details of the disorder-induced transition between s± and s++ states in the two-band model for Fe-based superconductors / V. A. Shestakov [et al.] // Supercond. Sci. Technol. - 2018. - Vol. 31, Is. 3. - Ст. 034001, DOI 10.1088/1361-6668/aaa501. - Cited References:62. - We are grateful to P D Grigor'ev and M V Sadovskii for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (grant 16-02-00098) and Government Support of the Leading Scientific Schools of the Russian Federation (NSh-7559.2016.2). MMK and VAS acknowledge the support of the 'BASIS' Foundation for Development of Theoretical Physics and Mathematics. . - ISSN 0953-2048. - ISSN 1361-6668
   Перевод заглавия: Детали вызванного беспорядком перехода между s± и s++ состояниями в двузонной модели сверхпроводников на основе железа

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
IRON-BASED SUPERCONDUCTORS
HIGH-TEMPERATURE SUPERCONDUCTIVITY
PAIRING
Кл.слова (ненормированные):
unconventional superconductors -- iron pnictides -- iron chalcogenides -- impurity scattering
Аннотация: IIrradiation of superconductors with different particles is one of many ways to investigate the effects of disorder. Here we study the disorder-induced transition between s ± and s ++ states in the two-band model for Fe-based superconductors with nonmagnetic impurities. Specifically, we investigate the important question of whether the superconducting gaps during the transition change smoothly or abruptly. We show that the behavior can be of either type and is controlled by the ratio of intraband to interband impurity scattering potentials, and by a parameter σ, that represents scattering strength and ranges from zero (Born approximation) to one (unitary limit). For the pure interband scattering potential and the scattering strength σ ≲ 0.11, the s ± → s ++ transition is accompanied by steep changes in the gaps, while for larger values of σ, the gaps change smoothly. The behavior of the gaps is characterized by steep changes at low temperatures, T˂ 0.1Tc0 with Tc0 being the critical temperature in the clean limit, otherwise it changes gradually. The critical temperature Tc is always a smooth function of the scattering rate in spite of the steep changes in the behavior of the gaps.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Leibniz Inst Festkorper & Werkstoffforsch, D-01069 Dresden, Germany.
Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany.
RAS, PN Lebedev Phys Inst, Moscow 119991, Russia.

Доп.точки доступа:
Shestakov, V. A.; Шестаков, Вадим Андреевич; Korshunov, M. M.; Коршунов, Максим Михайлович; Togushova, Yu.N.; Тогушова Ю. Н.; Efremov, D. V.; Dolgov, O. V.; Russian Foundation for Basic Research [16-02-00098]; Government Support of the Leading Scientific Schools of the Russian Federation [NSh-7559.2016.2]; 'BASIS' Foundation for Development of Theoretical Physics and Mathematics
}
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    Alekseev, K. N.
    Dynamic chaos in the interaction between light and impurity centers in a crystal [Preprint] : препринт. № 598Ф / K. N. Alekseev, G. P. Berman ; Акад. наук СССР [et al.]. - Красноярск : ИФ СО АН СССР, 1989. - 8 p. - Библиогр. - 180 экз.
Перевод заглавия: Динамический хаос при взаимодействии света с примесными центрами в кристалле
   Перевод заглавия: Динамический хаос при взаимодействии света с примесными центрами в кристалле

Держатели документа:
ГУНБ Красноярского края

Доп.точки доступа:
Berman, G. P.; Берман, Геннадий Петрович; Алексеев, Кирилл Николаевич; Академия наук СССР; Сибирское отделение АН СССР; Институт физики им. Л.В. Киренского Сибирского отделения АН СССР
Свободных экз. нет}
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Zhandun, V. S.
Effect of an Eu3+ impurity on the antiferrodistortion and ferroelectric instabilities in an EuTiO3 bulk crystal and thin films / V. S. Zhandun, N. G. Zamkova, V. I. Zinenko // J. Exp. Theor. Phys. - 2015. - Vol. 120, Is. 1. - P. 103-109, DOI 10.1134/S1063776115010070. - Cited References:21. - This work was supported by the Russian Foundation for Basic Research (project no. 12-02-00025-a) and the program Leading Scientific Schools of the President of the Russian Federation (project no. NSh-924.2014.2). . - ISSN 1063. - ISSN 1090-6509. -

РУБ Physics, Multidisciplinary
Рубрики:
PEROVSKITES
Аннотация: The existence of an antiferrodistortion transition in EuTiO3 is disputable, and this question needs to be answered. One of the possible causes is the presence of an Eu3+ impurity in a sample. A nonempirical polarizable ion model is used to study the effect of a trivalent Eu3+ ion impurity on the antiferrodistortion and ferroelectric instabilities of an EuTiO3 crystal in the bulk and the thin-film states. Lattice dynamics calculation shows that a bulk impurity-free EuTiO3 crystal has no unstable modes throughout the entire phase space volume. The addition of an Eu3+ impurity leads to a significant softening of the rotational mode, the distortion in which makes tetragonal phase I4/mcm (which is experimentally observed) energetically favorable. In going from the bulk crystal to the thin film, the vibration spectrum of the impurity-free film has unstable antiferrodistortion and rotational modes. The addition of an Eu3+ impurity enhances the antiferrodistortion instability, which fully or partly suppresses ferroelectricity.

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Публикация на русском языке Жандун, Вячеслав Сергеевич. Влияние примеси Eu3+ на антиферродисторсионную и сегнетоэлектрическую неустойчивости в объемном кристалле и тонких пленках EuTiO3 [Текст] / В. С. Жандун, Н. Г. Замкова, В. И. Зиненко // J. Exp. Theor. Phys. : Наука, 2015. - Т. 147 Вып. 1. - С. 119-126

Доп.точки доступа:
Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zinenko, V. I.; Зиненко, Виктор Иванович; Жандун, Вячеслав Сергеевич; Russian Foundation for Basic Research [12-02-00025-a]; Russian Federation [NSh-924.2014.2]
}
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Effect of cobalt impurity ions on the magnetic and electrical properties of iron monosilicide crystals / G. S. Patrin [et al.] // J. Exp. Theor. Phys. - 2011. - Vol. 112, Is. 2. - P. 303-309, DOI 10.1134/S1063776111010146. - Cited References: 23 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
GAP FORMATION
FESI
Кл.слова (ненормированные):
Concentration dependence -- Electrical property -- Energy structures -- Experimental data -- Experimental investigations -- Field dependence -- Impurity ions -- Kondo models -- Magnetic and electrical properties -- Si crystals -- Cobalt -- Crystal impurities -- Crystals -- Magnetic susceptibility -- Electric properties
Аннотация: The results of experimental investigations of Fe1 - x Co (x) Si crystals in the impurity limit with x = 0.001, 0.005, and 0.01 are reported. The temperature and field dependences of the magnetic susceptibility have been studied. According to the experimental data, the introduction of cobalt impurity leads to a change in the energy structure, which is most pronounced in a change in the electrical properties. The temperature, field, and concentration dependences of the resistivity have been measured. The results have been interpreted in the framework of the Kondo model.

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Держатели документа:
[Patrin, G. S.
Velikanov, D. A.
Volkov, N. V.
Yurkin, G. Yu.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Patrin, G. S.
Beletskii, V. V.] Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Beletskii, V. V.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Volkov, N. V.; Волков, Никита Валентинович; Yurkin, G. Yu.
}
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SANDALOV, I. S.
EFFECT OF MIXING THE STATES OF CONDUCTIVITY ELECTRONS AND IMPURITY D(F) IONS ON ELECTRIC-CONDUCTIVITY / I. S. SANDALOV, M. S. YERUKHIMOV // Zhurnal Eksperimentalnoi Teor. Fiz. - 1982. - Vol. 82, Is. 1. - P. 246-253. - Cited References: 17 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

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Доп.точки доступа:
YERUKHIMOV, M. S.
}
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10.

    Val'kov, V. V.
    Effect of multiple scattering on the quantum transport of electrons through a magnetic impurity with a single-ion anisotropy : abstract / V. V. Val'kov, S. V. Aksenov, E. A. Ulanov // Spin Waves 2013, Int. Symp. : Program. Abstracts. - СПб., 2013. - P. 75 . - ISBN 978-5-91918-334-1
   Перевод заглавия: Влияние многократного рассеяния на квантовый транспорт электронов через магнитную примесь с одноионной анизотропией

Материалы конференции

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Ulanov, E. A.; Вальков, Валерий Владимирович; Российская академия наук; Физико-технический институт им. А.Ф. Иоффе РАН; "Spin Waves", International Symposium (2013 ; июнь ; 9-15 ; Санкт-Петербург)
}
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11.

    Val'kov, V. V.
    Effect of multiple scattering on the quantum transport of electrons through a magnetic impurity with a single-ion anisotropy : abstract / V. V. Val'kov, S. V. Aksenov, E. A. Ulanov ; Taurida National V. I. Vernadsky University // Functional materials : Abstracts / ed. V. N. Berzhansky. - Simferopol, 2013. - Ст. BP2-1P/2. - P. . - ISBN 978-966-491-465-6
   Перевод заглавия: Влияние многократного рассеяния на квантовый транспорт электронов через магнитную примесь с одноионной анизотропией

Материалы конференции

Доп.точки доступа:
Berzhansky, V. N. \ed.\; Бержанский, Владимир Наумович; Aksenov, S. V.; Аксенов, Сергей Владимирович; Ulanov, E. A.; Вальков, Валерий Владимирович; Taurida National V. I. Vernadsky University; "Functional Materials", International Conference(2013 ; 29 Sept.-5 Oct. ; Partenit, Yalta; Ukraine Crimea)
}
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12.

Petrakovsky, G. A.
Effect of optical-excitation of impurity holmium ions on magnetic-resonance in yttrium-iron-garnet / G. A. Petrakovsky, G. S. Patrin // Zhurnal Eksperimentalnoi Teor. Fiz. - 1986. - Vol. 90, Is. 5. - P. 1769-1780. - Cited References: 27 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

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Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Петраковский, Герман Антонович
}
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13.

Val'kov, V. V.
Effect of pressure on antiferromagnetic and superconducting ordering in systems with heavy fermions / V. V. Val'kov, A. O. Zlotnikov // Bull. Russ. Acad. Sci.: Phys. - 2012. - Vol. 76, Is. 7. - P. 733-736, DOI 10.3103/S1062873812070362. - Cited References: 7. - This work was supported by the Department of Physical Sciences, Russian Academy of Sciences (the Strong Electron Correlations Program); the Russian Foundation for Basic Research, projects nos. 100200251 and 110200741; the RFBR Sibir’, project no. 110298007; and by the federal target program Scientific and Pedagogical Personnel of an Innovative Russia, 2009–2013. . - ISSN 0022-2860
Кл.слова (ненормированные):
Antiferromagnetic orderings -- Antiferromagnetic orders -- Antiferromagnetic phasis -- Antiferromagnetics -- Cooper instability -- Effect of pressure -- External pressures -- Heavy fermion -- Impurity level -- Localized state -- Periodic Anderson model -- Seed energy -- Spin moments -- Superconducting ordering -- Superexchange interaction -- Superconductivity -- Antiferromagnetism
Аннотация: Characteristics of the superconducting and antiferromagnetic phases of heavy-fermion intermet-allides are described within a periodic Anderson model with allowance for the superexchange interaction between spin moments of the localized states. It is shown that an external pressure that changes the seed energy of an impurity level can rapidly destroy the long-range antiferromagnetic order. The development of the Cooper instability near such an order-disorder transition induces the experimentally observed state in which superconductivity coexists with the antiferromagnetic ordering. В© 2012 Allerton Press, Inc.

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Публикация на русском языке Вальков, Валерий Владимирович. Влияние давления на антиферромагнитное и сверхпроводящее упорядочение в системах с тяжелыми фермионами [Текст] / В. В. Вальков, A. O. Злотников // Изв. РАН. Сер. физич. - 2012. - Т. 76 № 7. - С. 821-824

Доп.точки доступа:
Zlotnikov, A. O.; Злотников, Антон Олегович; Вальков, Валерий Владимирович; International Interdisciplinary Symposium “Ordering in Minerals and Alloys” (14th ; 8 -13 Sept. 2011 ; Rostov-on-Don)
}
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14.

OVCHINNIKOV, S. G.
EFFECT OF SUBSTITUTIONAL IMPURITY SPECIES ON THE SUPPRESSION OF MAGNETIC-PROPERTIES OF WEAKLY DOPED COPPER OXIDES / S. G. OVCHINNIKOV // Fiz. Tverd. Tela. - 1994. - Vol. 36, Is. 5. - P. 1307-1310. - Cited References: 16 . - ISSN 0367-3294

РУБ Physics, Condensed Matter
Рубрики:
ELECTRONIC-STRUCTURE
   SUPERCONDUCTIVITY
   LA2CUO4
   EXCITATIONS
   SPECTRA

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15.

    Korshunov, M. M.
    Effect of the spin-orbit coupling and impurity scattering on the spin resonance peak in three-orbital model for Fe-based superconductors / M. M. Korshunov, Yu. N. Togushova // J. Sib. Fed. Univ. Math. Phys. - 2018. - Vol. 11, Is. 1. - P. 108-116 ; Журн. СФУ. Сер. "Математика и физика", DOI 10.17516/1997-1397-2018-11-1-108-116. - Cited References: 27 . - ISSN 1997-1397
   Перевод заглавия: Влияние спин-орбитального взаимодействия и рассеяния на примесях на спин-резонансный пик в трёхорбитальной модели сверхпроводников на основе железа
Аннотация: Here we study a combined effect of the spin-orbit coupling and scattering on the nonmagnetic disorder on the formation of the spin resonance peak in iron-based superconductors. Spin susceptibility is calculated within the random phase approximation. The spin resonance peak becomes broader with the increase of disorder and its frequency also shifts. At the same time, the spin response in the s state is different from that of the s++ state.
Исследуется совместное влияние спин-орбитального взаимодействия и рассеяния на немагнитном беспорядке на формирование спин-резонансного пика в сверхпроводниках на основе железа. Спиновая восприимчивость вычислена в приближении хаотических фаз. Спин-резонансный пик становится шире с увеличением беспорядка, и его частота также смещается. В то же время спиновый отклик в состоянии s± отличается от такового в состоянии s++.

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Togushova, Yu.N.; Тогушова, Ю.Н.; Коршунов, Максим Михайлович

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16.

Fransson, J.
Effects of non-orthogonality and electron correlations on the time-dependent current through quantum dots / J. . Fransson, O. . Eriksson, I. . Sandalov // Phys. Rev. B. - 2002. - Vol. 66, Is. 19. - Ст. 195319, DOI 10.1103/PhysRevB.66.195319. - Cited References: 46 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
GREENS-FUNCTION APPROACH
   TUNNEL-JUNCTIONS
   LOCAL OXIDATION
   ANDERSON MODEL
   TRANSPORT
   NONORTHOGONALITY
   CONDUCTANCE
   EQUILIBRIUM
   TRANSISTOR
   IMPURITY
Аннотация: Three issues are analyzed in the physics of time-dependent tunneling current through a quantum dot with strongly correlated electrons coupled to two external contact leads: (i) nonorthogonality of the states of electrons in the leads and in the quantum dot, (ii) non-Fermi statistics of the excitations in the quantum dot, and iii) kinematic shift of the quantum dot levels. The contributions from nonorthogonality effectively decrease the mixing interaction between the leads and the quantum dot and the width of the quantum dot level whereas the Gibbs statistics slightly changes the spectral weights of quantum dot levels, and decreases the widths, but does not introduce drastical changes to the current. The kinematic interactions are taken into account within the loop correction. For the case of block signal, the time-dependent current shows oscillations starting at the onset and termination of the bias voltage pulse.

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Держатели документа:
Univ Uppsala, Condensed Matter Theory Grp, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Eriksson, O.; Sandalov, I.
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17.

    Val'kov, V. V.
    Fano effect upon tunneling of a spin-polarized electron through a single magnetic impurity / V.V. Val'kov, S. V. Aksenov, E. A. Ulanov // Low Temp. Phys. - 2013. - Vol. 39, no. 1. - P. 35-38 ; Физика низких температурDOI 10.1063/1.4775746
   Перевод заглавия: Эффект Фано при туннелировании спин-поляризованного электрона через одиночную магнитную примесь
Аннотация: The calculations of transport characteristics of a single magnetic impurity showed that the presence of different effective channels for electron transmission results in the Fano effect. It was noticed that the external magnetic field and gate voltage allow controlling the conducting properties, which are governed by the configuration interaction between the states of the system

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Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Ulanov, E. A.; Вальков, Валерий Владимирович

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18.

Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films / V. G. Myagkov [et al.] // Thin Solid Films. - 2014. - Vol. 552. - P. 86-91, DOI 10.1016/j.tsf.2013.12.029. - Cited References: 53 . - ISSN 0040-6090

РУБ Materials Science, Multidisciplinary + Materials Science, Coatings & Films + Physics, Applied + Physics, Condensed Matter
Рубрики:
PHASE-FORMATION
   MAGNETIC-PROPERTIES
   Mn5Ge3 FILMS
   X-RAY
   Ge(111)
   TRANSFORMATIONS
   DIFFUSION
   SPECTRA
   SYSTEM
   LAYERS
Кл.слова (ненормированные):
Manganite-germanium -- Solid state reaction -- First phase -- Mn5Ge3 alloy -- Carbon impurity -- Oxygen impurity -- Annealing -- Magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660049, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mikhlin, Y. L.; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Patrin, G. S.; Патрин, Геннадий Семёнович; Yurkin, G. Yu.; Юркин, Глеб Юрьевич
}
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19.

Butenko, A. V.
Giant impurity nonlinearities in optics of fractal clusters / A. V. Butenko, V. M. Shalayev, M. I. Stockman // Zhurnal |Eksperim. Teor. Fiz. - 1988. - Vol. 94, Is. 1. - P. 107-124. - Cited References: 12 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

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Держатели документа:
LV KIRENSKII PHYS INST,KRASNOYARSK,USSR
KRASNOYARSK STATE UNIV,KRASNOYARSK,USSR
ИФ СО РАН
Доп.точки доступа:
Shalayev, V. M.; Шалаев, Владимир Михайлович; Stockman, M. I.; Бутенко, Андрей Викторович
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20.

    Implanted gallium impurity detection in silicon by impedance spectroscopy / D. Tetelbaum, A. Nikolskaya, M. Dorokhin [et al.] // Mater. Lett. - 2022. - Vol. 308, Part B. - Ст. 131244, DOI 10.1016/j.matlet.2021.131244. - Cited References: 11. - This study was supported by the Russian Foundation for Basic Research (grant No. 20-42-243007), Ministry of Science and Higher Education of the Russian Federation (project No. 075-03-2020-191/5), as well as the Government of the Russian Federation within the framework of the Megagrant for the creation of world-class laboratories (No. 075-15-2019-1886) . - ISSN 0167-577X
   Перевод заглавия: Обнаружение имплантированной примеси галлия в кремнии методом импедансной спектроскопии
Кл.слова (ненормированные):
Silicon -- Ion implantation -- Impedance spectroscopy -- Energy levels -- Ion channeling
Аннотация: The results of determining the energy levels of boron-doped silicon implanted with gallium ions by impedance spectroscopy are reported. In the as-implanted sample the boron level remains the same and a second level appears close to the Ga-level reported in literature. In the sample annealed at 1000 °C, two levels are observed neither of which corresponds to the literature values for boron and gallium. It is assumed that in the as-implanted sample this method detects levels of gallium atoms located at a depth where ions penetrate due to the channeling effect, since a large concentration of defects at shallower depths does not allow detection of energy levels due to the Fermi level pinning. Explaining the results for the sample annealed after implantation requires additional research. The main result of this work is to establish the possibility of detecting impurity levels in ion-implanted silicon by impedance spectroscopy even in the absence of subsequent annealing.

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Держатели документа:
Research Institute of Physics and Technology, Lobachevsky University, 23/3 Gagarina Avenue, Nizhny Novgorod, 603022, Russian Federation
Kirensky Institute of Physics, 50 st. Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Tetelbaum, D.; Nikolskaya, A.; Dorokhin, M.; Vasiliev, V.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Baron, F. A.; Барон, Филипп Алексеевич; Tarasov, A. S.; Тарасов, Антон Сергеевич
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