Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (4)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=Impurity<.>)

Общее количество найденных документов : 54
Показаны документы с 1 по 20

1-20 21-40 41-54

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : An impurity resistivity of doped manganese perovskites
Место публикации : Physica B: ELSEVIER SCIENCE BV, 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P828-830. - ISSN 0921-4526, DOI 10.1016/S0921-4526(98)00875-8
Примечания : Cited References: 4
Предметные рубрики:
Ключевые слова (''Своб.индексиров.''): manganese perovskites--mobility--linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H--0) = 0 for T T(c) to linear dR/dH\(H--0) for T T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : ALEKSEEV K. N., ALEKSEEVA N. V.
Заглавие : CHAOTIC DYNAMICS IN LIGHT IMPURITY CENTER INTERACTION
Разночтения заглавия :us: Chaotic dynamics in light-impurity center interaction
Место публикации : Phys. Lett. A: ELSEVIER SCIENCE BV, 1992. - Vol. 162, Is. 1. - P82-85. - ISSN 0375-9601, DOI 10.1016/0375-9601(92)90965-O
Примечания : Cited References: 26
Предметные рубрики: QUANTUM OPTICS
CRYSTALS
Аннотация: Interaction of an impurity center in crystal with light and crystal lattice vibrations is considered. Conditions of the transition to Hamiltonian chaos have been obtained for the case of strong and resonant electron-phonon coupling.
WOS,
Scopus
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Togushova Yu. N., Dolgov, O., V
Заглавие : Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth
Коллективы : Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
Место публикации : Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст.075008. - ISSN 0953-2048, DOI 10.1088/1361-6668/abff6f. - ISSN 1361-6668(eISSN)
Примечания : Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007.
Предметные рубрики: ORDER-PARAMETER
IMPURITIES
SUPERCONDUCTORS
STATES
MODEL
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Togushova Yu.N., Efremov D. V., Dolgov O. V.
Заглавие : Details of the disorder-induced transition between s± and s++ states in the two-band model for Fe-based superconductors
Коллективы : Russian Foundation for Basic Research [16-02-00098]; Government Support of the Leading Scientific Schools of the Russian Federation [NSh-7559.2016.2]; 'BASIS' Foundation for Development of Theoretical Physics and Mathematics
Место публикации : Supercond. Sci. Technol. - 2018. - Vol. 31, Is. 3. - Ст.034001. - ISSN 0953-2048, DOI 10.1088/1361-6668/aaa501. - ISSN 1361-6668(eISSN)
Примечания : Cited References:62. - We are grateful to P D Grigor'ev and M V Sadovskii for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (grant 16-02-00098) and Government Support of the Leading Scientific Schools of the Russian Federation (NSh-7559.2016.2). MMK and VAS acknowledge the support of the 'BASIS' Foundation for Development of Theoretical Physics and Mathematics.
Предметные рубрики: IRON-BASED SUPERCONDUCTORS
HIGH-TEMPERATURE SUPERCONDUCTIVITY
PAIRING
Ключевые слова (''Своб.индексиров.''): unconventional superconductors--iron pnictides--iron chalcogenides--impurity scattering
Аннотация: IIrradiation of superconductors with different particles is one of many ways to investigate the effects of disorder. Here we study the disorder-induced transition between s ± and s ++ states in the two-band model for Fe-based superconductors with nonmagnetic impurities. Specifically, we investigate the important question of whether the superconducting gaps during the transition change smoothly or abruptly. We show that the behavior can be of either type and is controlled by the ratio of intraband to interband impurity scattering potentials, and by a parameter σ, that represents scattering strength and ranges from zero (Born approximation) to one (unitary limit). For the pure interband scattering potential and the scattering strength σ ≲ 0.11, the s ± → s ++ transition is accompanied by steep changes in the gaps, while for larger values of σ, the gaps change smoothly. The behavior of the gaps is characterized by steep changes at low temperatures, T˂ 0.1Tc0 with Tc0 being the critical temperature in the clean limit, otherwise it changes gradually. The critical temperature Tc is always a smooth function of the scattering rate in spite of the steep changes in the behavior of the gaps.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Однотомное издание (Препринт)
Шифр издания :
Автор(ы) : Alekseev K. N., Berman G. P.
Заглавие : Dynamic chaos in the interaction between light and impurity centers in a crystal : препринт. № 598Ф
Выходные данные : Красноярск: ИФ СО АН СССР, 1989
Колич.характеристики :8 с
Коллективы : Академия наук СССР, Сибирское отделение АН СССР, Институт физики им. Л.В. Киренского Сибирского отделения АН СССР
Примечания : Библиогр. :
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhandun V. S., Zamkova N. G., Zinenko V. I.
Заглавие : Effect of an Eu3+ impurity on the antiferrodistortion and ferroelectric instabilities in an EuTiO3 bulk crystal and thin films
Коллективы : Russian Foundation for Basic Research [12-02-00025-a], Russian Federation [NSh-924.2014.2]
Место публикации : J. Exp. Theor. Phys.: MAIK Nauka-Interperiodica / Springer, 2015. - Vol. 120, Is. 1. - P.103-109. - ISSN 1063, DOI 10.1134/S1063776115010070. - ISSN 10906509(eISSN)
Примечания : Cited References:21. - This work was supported by the Russian Foundation for Basic Research (project no. 12-02-00025-a) and the program Leading Scientific Schools of the President of the Russian Federation (project no. NSh-924.2014.2).
Предметные рубрики: PEROVSKITES
Аннотация: The existence of an antiferrodistortion transition in EuTiO3 is disputable, and this question needs to be answered. One of the possible causes is the presence of an Eu3+ impurity in a sample. A nonempirical polarizable ion model is used to study the effect of a trivalent Eu3+ ion impurity on the antiferrodistortion and ferroelectric instabilities of an EuTiO3 crystal in the bulk and the thin-film states. Lattice dynamics calculation shows that a bulk impurity-free EuTiO3 crystal has no unstable modes throughout the entire phase space volume. The addition of an Eu3+ impurity leads to a significant softening of the rotational mode, the distortion in which makes tetragonal phase I4/mcm (which is experimentally observed) energetically favorable. In going from the bulk crystal to the thin film, the vibration spectrum of the impurity-free film has unstable antiferrodistortion and rotational modes. The addition of an Eu3+ impurity enhances the antiferrodistortion instability, which fully or partly suppresses ferroelectricity.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Beletskii V. V., Velikanov D. A., Volkov N. V., Yurkin G. Yu.
Заглавие : Effect of cobalt impurity ions on the magnetic and electrical properties of iron monosilicide crystals
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 112, Is. 2. - P303-309. - ISSN 1063-7761, DOI 10.1134/S1063776111010146
Примечания : Cited References: 23
Предметные рубрики: GAP FORMATION
FESI
Ключевые слова (''Своб.индексиров.''): concentration dependence--electrical property--energy structures--experimental data--experimental investigations--field dependence--impurity ions--kondo models--magnetic and electrical properties--si crystals--cobalt--crystal impurities--crystals--magnetic susceptibility--electric properties
Аннотация: The results of experimental investigations of Fe1 - x Co (x) Si crystals in the impurity limit with x = 0.001, 0.005, and 0.01 are reported. The temperature and field dependences of the magnetic susceptibility have been studied. According to the experimental data, the introduction of cobalt impurity leads to a change in the energy structure, which is most pronounced in a change in the electrical properties. The temperature, field, and concentration dependences of the resistivity have been measured. The results have been interpreted in the framework of the Kondo model.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : SANDALOV I. S., YERUKHIMOV M. S.
Заглавие : EFFECT OF MIXING THE STATES OF CONDUCTIVITY ELECTRONS AND IMPURITY D(F) IONS ON ELECTRIC-CONDUCTIVITY
Место публикации : Zhurnal Eksperimentalnoi Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1982. - Vol. 82, Is. 1. - P246-253. - ISSN 0044-4510
Примечания : Cited References: 17
WOS
Найти похожие

10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V., Ulanov E. A.
Заглавие : Effect of multiple scattering on the quantum transport of electrons through a magnetic impurity with a single-ion anisotropy : abstract
Коллективы : Российская академия наук, Физико-технический институт им. А.Ф. Иоффе РАН, "Spin Waves", International Symposium
Место публикации : Spin Waves 2013, Int. Symp.: Program. Abstracts. - СПб., 2013. - P.75. - ISBN 978-5-91918-334-1
Материалы конференции
Найти похожие

11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V., Ulanov E. A.
Заглавие : Effect of multiple scattering on the quantum transport of electrons through a magnetic impurity with a single-ion anisotropy : abstract
Коллективы : "Functional Materials", International Conference , Taurida National V. I. Vernadsky University
Место публикации : Functional materials: Abstracts/ ed. V. N. Berzhansky. - Simferopol, 2013. - Ст.BP2-1P/2. - P. - ISBN 978-966-491-465-6
Материалы конференции
Найти похожие

12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrakovsky G. A., Patrin G. S.
Заглавие : Effect of optical-excitation of impurity holmium ions on magnetic-resonance in yttrium-iron-garnet
Место публикации : Zhurnal Eksperimentalnoi Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1986. - Vol. 90, Is. 5. - P1769-1780. - ISSN 0044-4510
Примечания : Cited References: 27
WOS
Найти похожие

13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Zlotnikov A. O.
Заглавие : Effect of pressure on antiferromagnetic and superconducting ordering in systems with heavy fermions
Коллективы : International Interdisciplinary Symposium “Ordering in Minerals and Alloys” (14th; 8 -13 Sept. 2011; Rostov-on-Don)
Место публикации : Bull. Russ. Acad. Sci.: Phys.: Allerton Press, 2012. - Vol. 76, Is. 7. - P.733-736. - ISSN 0022-2860, DOI 10.3103/S1062873812070362
Примечания : Cited References: 7. - This work was supported by the Department of Physical Sciences, Russian Academy of Sciences (the Strong Electron Correlations Program); the Russian Foundation for Basic Research, projects nos. 100200251 and 110200741; the RFBR Sibir’, project no. 110298007; and by the federal target program Scientific and Pedagogical Personnel of an Innovative Russia, 2009–2013.
Ключевые слова (''Своб.индексиров.''): antiferromagnetic orderings--antiferromagnetic orders--antiferromagnetic phasis--antiferromagnetics--cooper instability--effect of pressure--external pressures--heavy fermion--impurity level--localized state--periodic anderson model--seed energy--spin moments--superconducting ordering--superexchange interaction--superconductivity--antiferromagnetism
Аннотация: Characteristics of the superconducting and antiferromagnetic phases of heavy-fermion intermet-allides are described within a periodic Anderson model with allowance for the superexchange interaction between spin moments of the localized states. It is shown that an external pressure that changes the seed energy of an impurity level can rapidly destroy the long-range antiferromagnetic order. The development of the Cooper instability near such an order-disorder transition induces the experimentally observed state in which superconductivity coexists with the antiferromagnetic ordering. В© 2012 Allerton Press, Inc.
Смотреть статью,
Scopus,
Читать в сети ИФ
Найти похожие

14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : OVCHINNIKOV S. G.
Заглавие : EFFECT OF SUBSTITUTIONAL IMPURITY SPECIES ON THE SUPPRESSION OF MAGNETIC-PROPERTIES OF WEAKLY DOPED COPPER OXIDES
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1994. - Vol. 36, Is. 5. - P1307-1310. - ISSN 0367-3294
Примечания : Cited References: 16
Предметные рубрики: ELECTRONIC-STRUCTURE
SUPERCONDUCTIVITY
LA2CUO4
EXCITATIONS
SPECTRA
WOS
Найти похожие

15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Korshunov M. M., Togushova Yu.N.
Заглавие : Effect of the spin-orbit coupling and impurity scattering on the spin resonance peak in three-orbital model for Fe-based superconductors
Место публикации : J. Sib. Fed. Univ. Math. Phys. - 2018. - Vol. 11, Is. 1. - P.108-116. - ISSN 19971397 (ISSN), DOI 10.17516/1997-1397-2018-11-1-108-116; Журн. СФУ. Сер. "Математика и физика"
Примечания : Cited References: 27
Аннотация: Here we study a combined effect of the spin-orbit coupling and scattering on the nonmagnetic disorder on the formation of the spin resonance peak in iron-based superconductors. Spin susceptibility is calculated within the random phase approximation. The spin resonance peak becomes broader with the increase of disorder and its frequency also shifts. At the same time, the spin response in the s state is different from that of the s++ state.Исследуется совместное влияние спин-орбитального взаимодействия и рассеяния на немагнитном беспорядке на формирование спин-резонансного пика в сверхпроводниках на основе железа. Спиновая восприимчивость вычислена в приближении хаотических фаз. Спин-резонансный пик становится шире с увеличением беспорядка, и его частота также смещается. В то же время спиновый отклик в состоянии s± отличается от такового в состоянии s++.
Смотреть статью,
РИНЦ,
Читать в сети ИФ
Найти похожие

16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Eriksson O., Sandalov I.
Заглавие : Effects of non-orthogonality and electron correlations on the time-dependent current through quantum dots
Место публикации : Phys. Rev. B: AMERICAN PHYSICAL SOC, 2002. - Vol. 66, Is. 19. - Ст.195319. - ISSN 1098-0121, DOI 10.1103/PhysRevB.66.195319
Примечания : Cited References: 46
Предметные рубрики: GREENS-FUNCTION APPROACH
TUNNEL-JUNCTIONS
LOCAL OXIDATION
ANDERSON MODEL
TRANSPORT
NONORTHOGONALITY
CONDUCTANCE
EQUILIBRIUM
TRANSISTOR
IMPURITY
Аннотация: Three issues are analyzed in the physics of time-dependent tunneling current through a quantum dot with strongly correlated electrons coupled to two external contact leads: (i) nonorthogonality of the states of electrons in the leads and in the quantum dot, (ii) non-Fermi statistics of the excitations in the quantum dot, and iii) kinematic shift of the quantum dot levels. The contributions from nonorthogonality effectively decrease the mixing interaction between the leads and the quantum dot and the width of the quantum dot level whereas the Gibbs statistics slightly changes the spectral weights of quantum dot levels, and decreases the widths, but does not introduce drastical changes to the current. The kinematic interactions are taken into account within the loop correction. For the case of block signal, the time-dependent current shows oscillations starting at the onset and termination of the bias voltage pulse.
WOS,
Читать в сети ИФ
Найти похожие

17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V., Ulanov E. A.
Заглавие : Fano effect upon tunneling of a spin-polarized electron through a single magnetic impurity
Место публикации : Low Temp. Phys. - 2013. - Vol. 39, no. 1. - P.35-38. - DOI 10.1063/1.4775746; \b Физика низких температур
Аннотация: The calculations of transport characteristics of a single magnetic impurity showed that the presence of different effective channels for electron transmission results in the Fano effect. It was noticed that the external magnetic field and gate voltage allow controlling the conducting properties, which are governed by the configuration interaction between the states of the system
Смотреть статью
Найти похожие

18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
Смотреть статью,
Scopus,
WoS,
WOS,
Читать в сети ИФ
Найти похожие

19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Butenko A. V., Shalayev V. M., Stockman M. I.
Заглавие : Giant impurity nonlinearities in optics of fractal clusters
Место публикации : Zhurnal |Eksperim. Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1988. - Vol. 94, Is. 1. - P107-124. - ISSN 0044-4510
Примечания : Cited References: 12
WOS
Найти похожие

20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tetelbaum D., Nikolskaya A., Dorokhin M., Vasiliev V., Smolyakov D. A., Lukyanenko A. V., Baron F. A., Tarasov A. S.
Заглавие : Implanted gallium impurity detection in silicon by impedance spectroscopy
Место публикации : Mater. Lett. - 2022. - Vol. 308, Part B. - Ст.131244. - ISSN 0167577X (ISSN), DOI 10.1016/j.matlet.2021.131244
Примечания : Cited References: 11. - This study was supported by the Russian Foundation for Basic Research (grant No. 20-42-243007), Ministry of Science and Higher Education of the Russian Federation (project No. 075-03-2020-191/5), as well as the Government of the Russian Federation within the framework of the Megagrant for the creation of world-class laboratories (No. 075-15-2019-1886)
Аннотация: The results of determining the energy levels of boron-doped silicon implanted with gallium ions by impedance spectroscopy are reported. In the as-implanted sample the boron level remains the same and a second level appears close to the Ga-level reported in literature. In the sample annealed at 1000 °C, two levels are observed neither of which corresponds to the literature values for boron and gallium. It is assumed that in the as-implanted sample this method detects levels of gallium atoms located at a depth where ions penetrate due to the channeling effect, since a large concentration of defects at shallower depths does not allow detection of energy levels due to the Fermi level pinning. Explaining the results for the sample annealed after implantation requires additional research. The main result of this work is to establish the possibility of detecting impurity levels in ion-implanted silicon by impedance spectroscopy even in the absence of subsequent annealing.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие