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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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ALEKSEEV, K. N.
CHAOTIC DYNAMICS IN LIGHT IMPURITY CENTER INTERACTION / K. N. ALEKSEEV, N. V. ALEKSEEVA // Phys. Lett. A. - 1992. - Vol. 162, Is. 1. - P. 82-85, DOI 10.1016/0375-9601(92)90965-O. - Cited References: 26 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary
Рубрики:
QUANTUM OPTICS
CRYSTALS
Аннотация: Interaction of an impurity center in crystal with light and crystal lattice vibrations is considered. Conditions of the transition to Hamiltonian chaos have been obtained for the case of strong and resonant electron-phonon coupling.

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Держатели документа:
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russia, Russian Federation
ИФ СО РАН

Доп.точки доступа:
ALEKSEEVA, N. V.
}
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    Alekseev, K. N.
    Dynamic chaos in the interaction between light and impurity centers in a crystal [Preprint] : препринт. № 598Ф / K. N. Alekseev, G. P. Berman ; Акад. наук СССР [et al.]. - Красноярск : ИФ СО АН СССР, 1989. - 8 p. - Библиогр. - 180 экз.
Перевод заглавия: Динамический хаос при взаимодействии света с примесными центрами в кристалле
   Перевод заглавия: Динамический хаос при взаимодействии света с примесными центрами в кристалле

Держатели документа:
ГУНБ Красноярского края

Доп.точки доступа:
Berman, G. P.; Берман, Геннадий Петрович; Алексеев, Кирилл Николаевич; Академия наук СССР; Сибирское отделение АН СССР; Институт физики им. Л.В. Киренского Сибирского отделения АН СССР
Свободных экз. нет}
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Aver'yanov, E. M.
Manifestations of the higher moments of the orientation distribution function of molecules in the spectral properties of an impurity nematic / E. M. Aver'yanov, V. G. Rumyantsev // J. Exp. Theor. Phys. - 2004. - Vol. 98, Is. 6. - P. 1146-1151, DOI 10.1134/1.1777627. - Cited References: 15 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
LIQUID-CRYSTAL
   SCATTERING
   PHASES
   MATRIX
   ORDER
   DYES
Кл.слова (ненормированные):
Absorption -- Band structure -- Impurities -- Molecular dynamics -- Polarization -- Spectrum analysis -- Distribution function -- Local field parameters -- Splitting -- Temperature dependence -- Nematic liquid crystals
Аннотация: The polarized electronic absorption spectra, orientation ordering, and the special local field features were studied for push-pull linear dye molecules with strong donor-acceptor electronic conjugation of terminal fragments in the matrix of a nematic liquid crystal. The temperature-induced inversion of the sign of the splitting of polarized impurity absorption bands was observed. This effect was shown to be caused by the statistical character of orientation ordering of impurity molecules and manifestation of the higher moments of the orientation distribution function. The dependence of local field parameters (Lorentz tensor components) of impurity molecules on their orientation ordering was established. This dependence was used to reproduce the temperature dependence of the orientation order parameter of the matrix. (C) 2004 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
Res Inst Organ Intermediates & Dyes, Dolgoprudnyi 141700, Moscow Oblast, Russia
ИФ СО РАН
Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Research Institute of Organic Intermediates and Dyes, Dolgoprudnyi, Moscow oblast, 141700, Russian Federation

Доп.точки доступа:
Rumyantsev, V. G.; Аверьянов, Евгений Михайлович
}
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Averyanov, E. M.
New features in the structural relaxation of a nematic liquid-crystal doped with luminescent impurity molecules / E. M. Averyanov, V. A. Gunyakov // JETP Letters. - 1993. - Vol. 57, Is. 8. - P. 492-496. - Cited References: 15 . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
FLUORESCENCE DEPOLARIZATION
ORIENTATIONAL RELAXATION
FLUOROPHORES
Аннотация: A new approach is proposed for interpreting the polarized fluorescence spectra of an impure liquid crystal in which the orientational order of excited impurity molecules has undergone relaxation. This approach has also been realized experimentally. The new experimental data demonstrate a new relaxation process with a time scale on the order of 10(-11)-10(-9) s.

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Доп.точки доступа:
Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Аверьянов, Евгений МихайловичAver'yanov
}
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AVERYANOV, E. M.
POLARIZED LUMINESCENCE SPECTRUM OF IMPURITY LIQUID-CRYSTAL - THE DEGENERATION LIFTED AND RENEWED BY RELAXATION / E. M. AVERYANOV // Zhurnal Eksperimentalnoi Teor. Fiz. - 1993. - Vol. 103, Is. 6. - P. 2018-2038. - Cited References: 45 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary
Рубрики:
RESOLVED FLUORESCENCE DEPOLARIZATION
   UNIAXIAL MOLECULAR SAMPLES
   NEMATIC ORDER PARAMETERS
   EXCITED-STATES
   SPECTROSCOPY
   MEMBRANES
   FLUOROPHORES
   ORIENTATION
   TRANSITION
   DYES
Аннотация: The general molecular-statistical approach is proposed for the analysis or the polarized luminescence spectrum for impurity molecule of an arbitrary symmetry in the nematic liquid crystal matrix. On the particular example of uniaxial molecules the influence of features of the molecular electron structure, orientational statistics, molecular dynamics, and features of the anisotropic intermolecular coupling upon the positions of maxima v(if)(t) of impurity fluorescence polarized bands J(ij)(t) is studied. For the first time it is shown that all these factors significantly affect the degree of spectrum v(ij)(t) degeneration. For t not-equal 0, relaxation of excited impurity molecule subsystem toward the orientational distribution lifts a partial degeneration of spectrum v(ij), occuring at t not-equal 0, and renews partial or total degeneration of spectrum v(ij) in the limit t = infinity. In the lack of the spectrum v(ij) degeneration for t = 0 the relaxation may restore partial degeneration for t not-equal 0 as a function of the features of electron structure of molecules. The results of work explain the familiar experimental data on the number of independent component v(ij) and relation between them, on dependence of v(ij) upon the order of matrix and impurity subsystem, on the mutual relation in the positions of impurity band polarized component in the absorption and fluorescence spectra.

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}
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Averyanov, E. M.
Splitting of polarized impurity fluorescence bands in the steady-state spectrum of an isotropic solution / E. M. Averyanov // JETP Letters. - 1994. - Vol. 59, Is. 1. - P. 23-26. - Cited References: 12 . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
RELAXATION
Аннотация: A difference is predicted between the peaks, nu(VV) and nu(VH), Of the polarized components J(VV)(nu) and J(VH)(nu) in the steady-state spectrum of impurity fluorescence in an isotropic solution. This difference would result from a temporal correlation between an orientational Brownian diffusion of excited fluorescing molecules and a structural relaxation of the surrounding matrix molecules.

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Доп.точки доступа:
Аверьянов, Евгений МихайловичAver'yanov
}
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Butenko, A. V.
Giant impurity nonlinearities in optics of fractal clusters / A. V. Butenko, V. M. Shalayev, M. I. Stockman // Zhurnal |Eksperim. Teor. Fiz. - 1988. - Vol. 94, Is. 1. - P. 107-124. - Cited References: 12 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

WOS
Держатели документа:
LV KIRENSKII PHYS INST,KRASNOYARSK,USSR
KRASNOYARSK STATE UNIV,KRASNOYARSK,USSR
ИФ СО РАН
Доп.точки доступа:
Shalayev, V. M.; Шалаев, Владимир Михайлович; Stockman, M. I.; Бутенко, Андрей Викторович
}
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Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth / V. A. Shestakov, M. M. Korshunov, Y. N. Togushova, O. V. Dolgov // Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст. 075008, DOI 10.1088/1361-6668/abff6f. - Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007. . - ISSN 0953-2048. - ISSN 1361-6668

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
ORDER-PARAMETER
   IMPURITIES
   SUPERCONDUCTORS
   STATES
   MODEL
Кл.слова (ненормированные):
unconventional superconductors -- iron pnictides -- iron chalcogenides -- impurity scattering -- penetration depth
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
RAS, PN Lebedev Phys Inst, Moscow 119991, Russia.
Donostia Int Phys Ctr, San Sebastian 20018, Spain.

Доп.точки доступа:
Shestakov, V. A.; Шестаков, Вадим Андреевич; Korshunov, M. M.; Коршунов, Максим Михайлович; Togushova, Yu. N.; Тогушова Ю. Н.; Dolgov, O., V; Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
}
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10.

    Details of the disorder-induced transition between s± and s++ states in the two-band model for Fe-based superconductors / V. A. Shestakov [et al.] // Supercond. Sci. Technol. - 2018. - Vol. 31, Is. 3. - Ст. 034001, DOI 10.1088/1361-6668/aaa501. - Cited References:62. - We are grateful to P D Grigor'ev and M V Sadovskii for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (grant 16-02-00098) and Government Support of the Leading Scientific Schools of the Russian Federation (NSh-7559.2016.2). MMK and VAS acknowledge the support of the 'BASIS' Foundation for Development of Theoretical Physics and Mathematics. . - ISSN 0953-2048. - ISSN 1361-6668
   Перевод заглавия: Детали вызванного беспорядком перехода между s± и s++ состояниями в двузонной модели сверхпроводников на основе железа

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
IRON-BASED SUPERCONDUCTORS
HIGH-TEMPERATURE SUPERCONDUCTIVITY
PAIRING
Кл.слова (ненормированные):
unconventional superconductors -- iron pnictides -- iron chalcogenides -- impurity scattering
Аннотация: IIrradiation of superconductors with different particles is one of many ways to investigate the effects of disorder. Here we study the disorder-induced transition between s ± and s ++ states in the two-band model for Fe-based superconductors with nonmagnetic impurities. Specifically, we investigate the important question of whether the superconducting gaps during the transition change smoothly or abruptly. We show that the behavior can be of either type and is controlled by the ratio of intraband to interband impurity scattering potentials, and by a parameter σ, that represents scattering strength and ranges from zero (Born approximation) to one (unitary limit). For the pure interband scattering potential and the scattering strength σ ≲ 0.11, the s ± → s ++ transition is accompanied by steep changes in the gaps, while for larger values of σ, the gaps change smoothly. The behavior of the gaps is characterized by steep changes at low temperatures, T˂ 0.1Tc0 with Tc0 being the critical temperature in the clean limit, otherwise it changes gradually. The critical temperature Tc is always a smooth function of the scattering rate in spite of the steep changes in the behavior of the gaps.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Leibniz Inst Festkorper & Werkstoffforsch, D-01069 Dresden, Germany.
Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany.
RAS, PN Lebedev Phys Inst, Moscow 119991, Russia.

Доп.точки доступа:
Shestakov, V. A.; Шестаков, Вадим Андреевич; Korshunov, M. M.; Коршунов, Максим Михайлович; Togushova, Yu.N.; Тогушова Ю. Н.; Efremov, D. V.; Dolgov, O. V.; Russian Foundation for Basic Research [16-02-00098]; Government Support of the Leading Scientific Schools of the Russian Federation [NSh-7559.2016.2]; 'BASIS' Foundation for Development of Theoretical Physics and Mathematics
}
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11.

Effect of cobalt impurity ions on the magnetic and electrical properties of iron monosilicide crystals / G. S. Patrin [et al.] // J. Exp. Theor. Phys. - 2011. - Vol. 112, Is. 2. - P. 303-309, DOI 10.1134/S1063776111010146. - Cited References: 23 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
GAP FORMATION
FESI
Кл.слова (ненормированные):
Concentration dependence -- Electrical property -- Energy structures -- Experimental data -- Experimental investigations -- Field dependence -- Impurity ions -- Kondo models -- Magnetic and electrical properties -- Si crystals -- Cobalt -- Crystal impurities -- Crystals -- Magnetic susceptibility -- Electric properties
Аннотация: The results of experimental investigations of Fe1 - x Co (x) Si crystals in the impurity limit with x = 0.001, 0.005, and 0.01 are reported. The temperature and field dependences of the magnetic susceptibility have been studied. According to the experimental data, the introduction of cobalt impurity leads to a change in the energy structure, which is most pronounced in a change in the electrical properties. The temperature, field, and concentration dependences of the resistivity have been measured. The results have been interpreted in the framework of the Kondo model.

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Держатели документа:
[Patrin, G. S.
Velikanov, D. A.
Volkov, N. V.
Yurkin, G. Yu.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Patrin, G. S.
Beletskii, V. V.] Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Beletskii, V. V.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Volkov, N. V.; Волков, Никита Валентинович; Yurkin, G. Yu.
}
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12.

ERUKHIMOV, M. S.
IMPURITY STATES AND RESONANCE PROPERTIES OF FERROMAGNETIC SEMICONDUCTORS / M. S. ERUKHIMOV, S. G. OVCHINNIKOV // Fiz. Tverd. Tela. - 1989. - Vol. 31, Is. 1. - P. 33-39. - Cited References: 17 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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13.

Erukhinov, M. S.
The S-D(f)-hybridization effect on light-absorption in impurity magnetic semiconductors / M. S. Erukhinov // Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 6. - P. 1660-1665. - Cited References: 12 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

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}
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14.

Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films / V. G. Myagkov [et al.] // Thin Solid Films. - 2014. - Vol. 552. - P. 86-91, DOI 10.1016/j.tsf.2013.12.029. - Cited References: 53 . - ISSN 0040-6090

РУБ Materials Science, Multidisciplinary + Materials Science, Coatings & Films + Physics, Applied + Physics, Condensed Matter
Рубрики:
PHASE-FORMATION
   MAGNETIC-PROPERTIES
   Mn5Ge3 FILMS
   X-RAY
   Ge(111)
   TRANSFORMATIONS
   DIFFUSION
   SPECTRA
   SYSTEM
   LAYERS
Кл.слова (ненормированные):
Manganite-germanium -- Solid state reaction -- First phase -- Mn5Ge3 alloy -- Carbon impurity -- Oxygen impurity -- Annealing -- Magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660049, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mikhlin, Y. L.; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Patrin, G. S.; Патрин, Геннадий Семёнович; Yurkin, G. Yu.; Юркин, Глеб Юрьевич
}
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15.

Fransson, J.
Effects of non-orthogonality and electron correlations on the time-dependent current through quantum dots / J. . Fransson, O. . Eriksson, I. . Sandalov // Phys. Rev. B. - 2002. - Vol. 66, Is. 19. - Ст. 195319, DOI 10.1103/PhysRevB.66.195319. - Cited References: 46 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
GREENS-FUNCTION APPROACH
   TUNNEL-JUNCTIONS
   LOCAL OXIDATION
   ANDERSON MODEL
   TRANSPORT
   NONORTHOGONALITY
   CONDUCTANCE
   EQUILIBRIUM
   TRANSISTOR
   IMPURITY
Аннотация: Three issues are analyzed in the physics of time-dependent tunneling current through a quantum dot with strongly correlated electrons coupled to two external contact leads: (i) nonorthogonality of the states of electrons in the leads and in the quantum dot, (ii) non-Fermi statistics of the excitations in the quantum dot, and iii) kinematic shift of the quantum dot levels. The contributions from nonorthogonality effectively decrease the mixing interaction between the leads and the quantum dot and the width of the quantum dot level whereas the Gibbs statistics slightly changes the spectral weights of quantum dot levels, and decreases the widths, but does not introduce drastical changes to the current. The kinematic interactions are taken into account within the loop correction. For the case of block signal, the time-dependent current shows oscillations starting at the onset and termination of the bias voltage pulse.

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Держатели документа:
Univ Uppsala, Condensed Matter Theory Grp, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Eriksson, O.; Sandalov, I.
}
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16.

Fransson, J.
Many-body approach to spin-dependent transport in quantum dot systems / J. . Fransson, O. . Eriksson, I. . Sandalov // Phys. Rev. Lett. - 2002. - Vol. 88, Is. 22. - Ст. 226601, DOI 10.1103/PhysRevLett.88.226601. - Cited References: 37 . - ISSN 0031-9007

РУБ Physics, Multidisciplinary
Рубрики:
SINGLE-ELECTRON TRANSISTOR
   COULOMB-BLOCKADE
   ANDERSON IMPURITY
   ROOM-TEMPERATURE
   TUNNEL-JUNCTIONS
   EVEN NUMBER
   MODEL
   MAGNETORESISTANCE
   OSCILLATIONS
   CONDUCTANCE
Аннотация: By means of a diagram technique for Hubbard operators, we show the existence of a spin-dependent renormalization of the localized levels in an interacting region, e.g., quantum dot, modeled by the Anderson Hamiltonian with two conduction bands. It is shown that the renormalization of the levels with a given spin direction is due to kinematic interactions with the conduction subbands of the opposite spin. The consequence of this dressing of the localized levels is a drastically decreased tunneling current for ferromagnetically ordered leads compared to that of paramagnetically ordered leads. Furthermore, the studied system shows a spin-dependent resonant tunneling behavior for ferromagnetically ordered leads.

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Держатели документа:
Univ Uppsala, Condensed Matter Theory Grp, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

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Eriksson, O.; Sandalov, I.
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17.

Gavrichkov, V. A.
An impurity resistivity of doped manganese perovskites / V. A. Gavrichkov, S. G. Ovchinnikov // Physica B. - 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P. 828-830, DOI 10.1016/S0921-4526(98)00875-8. - Cited References: 4 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:

Кл.слова (ненормированные):
manganese perovskites -- mobility -- linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H-->0) = 0 for T > T(c) to linear dR/dH\(H-->0) for T < T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
}
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18.

Gavrichkov, V. A.
The jahn-teller instability criterion for resonance impurity states / V. A. Gavrichkov, S. A. GAVRICHKOV // Phys. Lett. A. - 1990. - Vol. 145, Is. 6-7. - P. 353-357, DOI 10.1016/0375-9601(90)90948-N. - Cited References: 13 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary

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Доп.точки доступа:
GAVRICHKOV, S. A.; Гавричков, Владимир Александрович
}
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19.

    Implanted gallium impurity detection in silicon by impedance spectroscopy / D. Tetelbaum, A. Nikolskaya, M. Dorokhin [et al.] // Mater. Lett. - 2022. - Vol. 308, Part B. - Ст. 131244, DOI 10.1016/j.matlet.2021.131244. - Cited References: 11. - This study was supported by the Russian Foundation for Basic Research (grant No. 20-42-243007), Ministry of Science and Higher Education of the Russian Federation (project No. 075-03-2020-191/5), as well as the Government of the Russian Federation within the framework of the Megagrant for the creation of world-class laboratories (No. 075-15-2019-1886) . - ISSN 0167-577X
   Перевод заглавия: Обнаружение имплантированной примеси галлия в кремнии методом импедансной спектроскопии
Кл.слова (ненормированные):
Silicon -- Ion implantation -- Impedance spectroscopy -- Energy levels -- Ion channeling
Аннотация: The results of determining the energy levels of boron-doped silicon implanted with gallium ions by impedance spectroscopy are reported. In the as-implanted sample the boron level remains the same and a second level appears close to the Ga-level reported in literature. In the sample annealed at 1000 °C, two levels are observed neither of which corresponds to the literature values for boron and gallium. It is assumed that in the as-implanted sample this method detects levels of gallium atoms located at a depth where ions penetrate due to the channeling effect, since a large concentration of defects at shallower depths does not allow detection of energy levels due to the Fermi level pinning. Explaining the results for the sample annealed after implantation requires additional research. The main result of this work is to establish the possibility of detecting impurity levels in ion-implanted silicon by impedance spectroscopy even in the absence of subsequent annealing.

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Держатели документа:
Research Institute of Physics and Technology, Lobachevsky University, 23/3 Gagarina Avenue, Nizhny Novgorod, 603022, Russian Federation
Kirensky Institute of Physics, 50 st. Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Tetelbaum, D.; Nikolskaya, A.; Dorokhin, M.; Vasiliev, V.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Baron, F. A.; Барон, Филипп Алексеевич; Tarasov, A. S.; Тарасов, Антон Сергеевич
}
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20.

Influence of a strong magnetic field on the ac transport properties of Fe/SiO2/n-Si MIS structure / D. A. Smolyakov, M. V. Rautskii, I. A. Bondarev [et al.] // J. Exp. Theor. Phys. - 2022. - Vol. 135, Is. 3. - P. 377-382, DOI 10.1134/S1063776122090102. - Cited References: 38. - The authors thank the administration of the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Division, Russian Academy of Sciences) for assistance. The authors also thank D.A. Balaev for valuable discussion and M.N. Volochaev for submission of PEM images. This study was supported by the Russian Foundation for Basic Research, Krasnoyarsk Region government, and Krasnoyarsk Region Foundation for research-and-engineering activity (grant no. 20-42-243007) . - ISSN 1063-7761
Кл.слова (ненормированные):
Ac transports -- Impurity state -- Magnetic-field -- Magneto-impedance effects -- MIS structure -- Real part -- Schottky diodes -- State energy -- Strong magnetic fields -- Temperature dependence
Аннотация: The ac transport properties of a Fe/SiO2/n-Si MIS structure made in the form of a Schottky diode have been studied in magnetic fields up to 9 T. A shift in the maxima of the temperature dependences of the impedance real part observed in the magnetic field is accompanied by the magnetoimpedance effect and takes place only at a certain relative orientation between the magnetic field and the surface of the sample. It has been found that the magnetoimpedance effect is related to the recharge of impurity states. Impurity state energy Es in the presence and absence of the magnetic field has been calculated. The impurity state energy is a nonlinear function of magnetic field and can be qualitatively characterized in terms of the theory of the Zeeman giant effect in diluted magnetic semiconductors. Other mechanisms of magnetic field influence on ac transport in MIS structures, specifically, on the impurity state recharge, cannot be disregarded either. This points calls for further investigation. Obtained data may provide a deeper insight into the nature of magnetoresistive effects in semiconductors and be used to design new-generation microelectronic devices.

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Публикация на русском языке Влияние сильного магнитного поля на транспортные свойства МДП-структуры Fe/SiO2/n-Si на переменном токе [Текст] / Д. А. Смоляков, М. В. Рауцкий, И. А. Бондарев [и др.] // Журн. эксперим. и теор. физ. - 2022. - Т. 162 Вып. 3. - С. 432-439

Держатели документа:
Kirenskii Institute of Metal Physics, Krasnoyarsk Scientific Center, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич
}
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