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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : ALEKSEEV K. N., ALEKSEEVA N. V.
Заглавие : CHAOTIC DYNAMICS IN LIGHT IMPURITY CENTER INTERACTION
Разночтения заглавия :us: Chaotic dynamics in light-impurity center interaction
Место публикации : Phys. Lett. A: ELSEVIER SCIENCE BV, 1992. - Vol. 162, Is. 1. - P82-85. - ISSN 0375-9601, DOI 10.1016/0375-9601(92)90965-O
Примечания : Cited References: 26
Предметные рубрики: QUANTUM OPTICS
CRYSTALS
Аннотация: Interaction of an impurity center in crystal with light and crystal lattice vibrations is considered. Conditions of the transition to Hamiltonian chaos have been obtained for the case of strong and resonant electron-phonon coupling.
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Вид документа : Однотомное издание (Препринт)
Шифр издания :
Автор(ы) : Alekseev K. N., Berman G. P.
Заглавие : Dynamic chaos in the interaction between light and impurity centers in a crystal : препринт. № 598Ф
Выходные данные : Красноярск: ИФ СО АН СССР, 1989
Колич.характеристики :8 с
Коллективы : Академия наук СССР, Сибирское отделение АН СССР, Институт физики им. Л.В. Киренского Сибирского отделения АН СССР
Примечания : Библиогр. :
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aver'yanov E. M., Rumyantsev V. G.
Заглавие : Manifestations of the higher moments of the orientation distribution function of molecules in the spectral properties of an impurity nematic
Место публикации : J. Exp. Theor. Phys.: AMER INST PHYSICS, 2004. - Vol. 98, Is. 6. - P1146-1151. - ISSN 1063-7761, DOI 10.1134/1.1777627
Примечания : Cited References: 15
Предметные рубрики: LIQUID-CRYSTAL
SCATTERING
PHASES
MATRIX
ORDER
DYES
Ключевые слова (''Своб.индексиров.''): absorption--band structure--impurities--molecular dynamics--polarization--spectrum analysis--distribution function--local field parameters--splitting--temperature dependence--nematic liquid crystals
Аннотация: The polarized electronic absorption spectra, orientation ordering, and the special local field features were studied for push-pull linear dye molecules with strong donor-acceptor electronic conjugation of terminal fragments in the matrix of a nematic liquid crystal. The temperature-induced inversion of the sign of the splitting of polarized impurity absorption bands was observed. This effect was shown to be caused by the statistical character of orientation ordering of impurity molecules and manifestation of the higher moments of the orientation distribution function. The dependence of local field parameters (Lorentz tensor components) of impurity molecules on their orientation ordering was established. This dependence was used to reproduce the temperature dependence of the orientation order parameter of the matrix. (C) 2004 MAIK "Nauka / Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Averyanov E. M., Gunyakov V. A.
Заглавие : New features in the structural relaxation of a nematic liquid-crystal doped with luminescent impurity molecules
Место публикации : JETP Letters. - 1993. - Vol. 57, Is. 8. - P.492-496. - ISSN 0021-3640
Примечания : Cited References: 15
Предметные рубрики: FLUORESCENCE DEPOLARIZATION
ORIENTATIONAL RELAXATION
FLUOROPHORES
Аннотация: A new approach is proposed for interpreting the polarized fluorescence spectra of an impure liquid crystal in which the orientational order of excited impurity molecules has undergone relaxation. This approach has also been realized experimentally. The new experimental data demonstrate a new relaxation process with a time scale on the order of 10(-11)-10(-9) s.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : AVERYANOV E. M.
Заглавие : POLARIZED LUMINESCENCE SPECTRUM OF IMPURITY LIQUID-CRYSTAL - THE DEGENERATION LIFTED AND RENEWED BY RELAXATION
Место публикации : Zhurnal Eksperimentalnoi Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1993. - Vol. 103, Is. 6. - P2018-2038. - ISSN 0044-4510
Примечания : Cited References: 45
Предметные рубрики: RESOLVED FLUORESCENCE DEPOLARIZATION
UNIAXIAL MOLECULAR SAMPLES
NEMATIC ORDER PARAMETERS
EXCITED-STATES
SPECTROSCOPY
MEMBRANES
FLUOROPHORES
ORIENTATION
TRANSITION
DYES
Аннотация: The general molecular-statistical approach is proposed for the analysis or the polarized luminescence spectrum for impurity molecule of an arbitrary symmetry in the nematic liquid crystal matrix. On the particular example of uniaxial molecules the influence of features of the molecular electron structure, orientational statistics, molecular dynamics, and features of the anisotropic intermolecular coupling upon the positions of maxima v(if)(t) of impurity fluorescence polarized bands J(ij)(t) is studied. For the first time it is shown that all these factors significantly affect the degree of spectrum v(ij)(t) degeneration. For t not-equal 0, relaxation of excited impurity molecule subsystem toward the orientational distribution lifts a partial degeneration of spectrum v(ij), occuring at t not-equal 0, and renews partial or total degeneration of spectrum v(ij) in the limit t = infinity. In the lack of the spectrum v(ij) degeneration for t = 0 the relaxation may restore partial degeneration for t not-equal 0 as a function of the features of electron structure of molecules. The results of work explain the familiar experimental data on the number of independent component v(ij) and relation between them, on dependence of v(ij) upon the order of matrix and impurity subsystem, on the mutual relation in the positions of impurity band polarized component in the absorption and fluorescence spectra.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Averyanov E. M.
Заглавие : Splitting of polarized impurity fluorescence bands in the steady-state spectrum of an isotropic solution
Место публикации : JETP Letters. - 1994. - Vol. 59, Is. 1. - P.23-26. - ISSN 0021-3640
Примечания : Cited References: 12
Предметные рубрики: RELAXATION
Аннотация: A difference is predicted between the peaks, nu(VV) and nu(VH), Of the polarized components J(VV)(nu) and J(VH)(nu) in the steady-state spectrum of impurity fluorescence in an isotropic solution. This difference would result from a temporal correlation between an orientational Brownian diffusion of excited fluorescing molecules and a structural relaxation of the surrounding matrix molecules.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Butenko A. V., Shalayev V. M., Stockman M. I.
Заглавие : Giant impurity nonlinearities in optics of fractal clusters
Место публикации : Zhurnal |Eksperim. Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1988. - Vol. 94, Is. 1. - P107-124. - ISSN 0044-4510
Примечания : Cited References: 12
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Togushova Yu. N., Dolgov, O., V
Заглавие : Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth
Коллективы : Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
Место публикации : Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст.075008. - ISSN 0953-2048, DOI 10.1088/1361-6668/abff6f. - ISSN 1361-6668(eISSN)
Примечания : Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007.
Предметные рубрики: ORDER-PARAMETER
IMPURITIES
SUPERCONDUCTORS
STATES
MODEL
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Togushova Yu.N., Efremov D. V., Dolgov O. V.
Заглавие : Details of the disorder-induced transition between s± and s++ states in the two-band model for Fe-based superconductors
Коллективы : Russian Foundation for Basic Research [16-02-00098]; Government Support of the Leading Scientific Schools of the Russian Federation [NSh-7559.2016.2]; 'BASIS' Foundation for Development of Theoretical Physics and Mathematics
Место публикации : Supercond. Sci. Technol. - 2018. - Vol. 31, Is. 3. - Ст.034001. - ISSN 0953-2048, DOI 10.1088/1361-6668/aaa501. - ISSN 1361-6668(eISSN)
Примечания : Cited References:62. - We are grateful to P D Grigor'ev and M V Sadovskii for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (grant 16-02-00098) and Government Support of the Leading Scientific Schools of the Russian Federation (NSh-7559.2016.2). MMK and VAS acknowledge the support of the 'BASIS' Foundation for Development of Theoretical Physics and Mathematics.
Предметные рубрики: IRON-BASED SUPERCONDUCTORS
HIGH-TEMPERATURE SUPERCONDUCTIVITY
PAIRING
Ключевые слова (''Своб.индексиров.''): unconventional superconductors--iron pnictides--iron chalcogenides--impurity scattering
Аннотация: IIrradiation of superconductors with different particles is one of many ways to investigate the effects of disorder. Here we study the disorder-induced transition between s ± and s ++ states in the two-band model for Fe-based superconductors with nonmagnetic impurities. Specifically, we investigate the important question of whether the superconducting gaps during the transition change smoothly or abruptly. We show that the behavior can be of either type and is controlled by the ratio of intraband to interband impurity scattering potentials, and by a parameter σ, that represents scattering strength and ranges from zero (Born approximation) to one (unitary limit). For the pure interband scattering potential and the scattering strength σ ≲ 0.11, the s ± → s ++ transition is accompanied by steep changes in the gaps, while for larger values of σ, the gaps change smoothly. The behavior of the gaps is characterized by steep changes at low temperatures, T˂ 0.1Tc0 with Tc0 being the critical temperature in the clean limit, otherwise it changes gradually. The critical temperature Tc is always a smooth function of the scattering rate in spite of the steep changes in the behavior of the gaps.
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Beletskii V. V., Velikanov D. A., Volkov N. V., Yurkin G. Yu.
Заглавие : Effect of cobalt impurity ions on the magnetic and electrical properties of iron monosilicide crystals
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 112, Is. 2. - P303-309. - ISSN 1063-7761, DOI 10.1134/S1063776111010146
Примечания : Cited References: 23
Предметные рубрики: GAP FORMATION
FESI
Ключевые слова (''Своб.индексиров.''): concentration dependence--electrical property--energy structures--experimental data--experimental investigations--field dependence--impurity ions--kondo models--magnetic and electrical properties--si crystals--cobalt--crystal impurities--crystals--magnetic susceptibility--electric properties
Аннотация: The results of experimental investigations of Fe1 - x Co (x) Si crystals in the impurity limit with x = 0.001, 0.005, and 0.01 are reported. The temperature and field dependences of the magnetic susceptibility have been studied. According to the experimental data, the introduction of cobalt impurity leads to a change in the energy structure, which is most pronounced in a change in the electrical properties. The temperature, field, and concentration dependences of the resistivity have been measured. The results have been interpreted in the framework of the Kondo model.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : ERUKHIMOV M. S., Ovchinnikov S. G.
Заглавие : IMPURITY STATES AND RESONANCE PROPERTIES OF FERROMAGNETIC SEMICONDUCTORS
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1989. - Vol. 31, Is. 1. - P33-39. - ISSN 0367-3294
Примечания : Cited References: 17
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Erukhinov M. S.
Заглавие : The S-D(f)-hybridization effect on light-absorption in impurity magnetic semiconductors
Место публикации : Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 6. - P.1660-1665. - ISSN 0367-3294
Примечания : Cited References: 12
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Eriksson O., Sandalov I.
Заглавие : Effects of non-orthogonality and electron correlations on the time-dependent current through quantum dots
Место публикации : Phys. Rev. B: AMERICAN PHYSICAL SOC, 2002. - Vol. 66, Is. 19. - Ст.195319. - ISSN 1098-0121, DOI 10.1103/PhysRevB.66.195319
Примечания : Cited References: 46
Предметные рубрики: GREENS-FUNCTION APPROACH
TUNNEL-JUNCTIONS
LOCAL OXIDATION
ANDERSON MODEL
TRANSPORT
NONORTHOGONALITY
CONDUCTANCE
EQUILIBRIUM
TRANSISTOR
IMPURITY
Аннотация: Three issues are analyzed in the physics of time-dependent tunneling current through a quantum dot with strongly correlated electrons coupled to two external contact leads: (i) nonorthogonality of the states of electrons in the leads and in the quantum dot, (ii) non-Fermi statistics of the excitations in the quantum dot, and iii) kinematic shift of the quantum dot levels. The contributions from nonorthogonality effectively decrease the mixing interaction between the leads and the quantum dot and the width of the quantum dot level whereas the Gibbs statistics slightly changes the spectral weights of quantum dot levels, and decreases the widths, but does not introduce drastical changes to the current. The kinematic interactions are taken into account within the loop correction. For the case of block signal, the time-dependent current shows oscillations starting at the onset and termination of the bias voltage pulse.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Eriksson O., Sandalov I.
Заглавие : Many-body approach to spin-dependent transport in quantum dot systems
Место публикации : Phys. Rev. Lett.: AMERICAN PHYSICAL SOC, 2002. - Vol. 88, Is. 22. - Ст.226601. - ISSN 0031-9007, DOI 10.1103/PhysRevLett.88.226601
Примечания : Cited References: 37
Предметные рубрики: SINGLE-ELECTRON TRANSISTOR
COULOMB-BLOCKADE
ANDERSON IMPURITY
ROOM-TEMPERATURE
TUNNEL-JUNCTIONS
EVEN NUMBER
MODEL
MAGNETORESISTANCE
OSCILLATIONS
CONDUCTANCE
Аннотация: By means of a diagram technique for Hubbard operators, we show the existence of a spin-dependent renormalization of the localized levels in an interacting region, e.g., quantum dot, modeled by the Anderson Hamiltonian with two conduction bands. It is shown that the renormalization of the levels with a given spin direction is due to kinematic interactions with the conduction subbands of the opposite spin. The consequence of this dressing of the localized levels is a drastically decreased tunneling current for ferromagnetically ordered leads compared to that of paramagnetically ordered leads. Furthermore, the studied system shows a spin-dependent resonant tunneling behavior for ferromagnetically ordered leads.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : An impurity resistivity of doped manganese perovskites
Место публикации : Physica B: ELSEVIER SCIENCE BV, 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P828-830. - ISSN 0921-4526, DOI 10.1016/S0921-4526(98)00875-8
Примечания : Cited References: 4
Предметные рубрики:
Ключевые слова (''Своб.индексиров.''): manganese perovskites--mobility--linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H--0) = 0 for T T(c) to linear dR/dH\(H--0) for T T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., GAVRICHKOV S. A.
Заглавие : The jahn-teller instability criterion for resonance impurity states
Место публикации : Phys. Lett. A. - 1990. - Vol. 145, Is. 6-7. - P.353-357. - ISSN 0375-9601, DOI 10.1016/0375-9601(90)90948-N
Примечания : Cited References: 13
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tetelbaum D., Nikolskaya A., Dorokhin M., Vasiliev V., Smolyakov D. A., Lukyanenko A. V., Baron F. A., Tarasov A. S.
Заглавие : Implanted gallium impurity detection in silicon by impedance spectroscopy
Место публикации : Mater. Lett. - 2022. - Vol. 308, Part B. - Ст.131244. - ISSN 0167577X (ISSN), DOI 10.1016/j.matlet.2021.131244
Примечания : Cited References: 11. - This study was supported by the Russian Foundation for Basic Research (grant No. 20-42-243007), Ministry of Science and Higher Education of the Russian Federation (project No. 075-03-2020-191/5), as well as the Government of the Russian Federation within the framework of the Megagrant for the creation of world-class laboratories (No. 075-15-2019-1886)
Аннотация: The results of determining the energy levels of boron-doped silicon implanted with gallium ions by impedance spectroscopy are reported. In the as-implanted sample the boron level remains the same and a second level appears close to the Ga-level reported in literature. In the sample annealed at 1000 °C, two levels are observed neither of which corresponds to the literature values for boron and gallium. It is assumed that in the as-implanted sample this method detects levels of gallium atoms located at a depth where ions penetrate due to the channeling effect, since a large concentration of defects at shallower depths does not allow detection of energy levels due to the Fermi level pinning. Explaining the results for the sample annealed after implantation requires additional research. The main result of this work is to establish the possibility of detecting impurity levels in ion-implanted silicon by impedance spectroscopy even in the absence of subsequent annealing.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Rautskii M. V., Bondarev I. A., Yakovlev I. A., Ovchinnikov S. G., Volkov N. V., Tarasov A. S.
Заглавие : Influence of a strong magnetic field on the ac transport properties of Fe/SiO2/n-Si MIS structure
Место публикации : J. Exp. Theor. Phys. - 2022. - Vol. 135, Is. 3. - P.377-382. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776122090102
Примечания : Cited References: 38. - The authors thank the administration of the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Division, Russian Academy of Sciences) for assistance. The authors also thank D.A. Balaev for valuable discussion and M.N. Volochaev for submission of PEM images. This study was supported by the Russian Foundation for Basic Research, Krasnoyarsk Region government, and Krasnoyarsk Region Foundation for research-and-engineering activity (grant no. 20-42-243007)
Аннотация: The ac transport properties of a Fe/SiO2/n-Si MIS structure made in the form of a Schottky diode have been studied in magnetic fields up to 9 T. A shift in the maxima of the temperature dependences of the impedance real part observed in the magnetic field is accompanied by the magnetoimpedance effect and takes place only at a certain relative orientation between the magnetic field and the surface of the sample. It has been found that the magnetoimpedance effect is related to the recharge of impurity states. Impurity state energy Es in the presence and absence of the magnetic field has been calculated. The impurity state energy is a nonlinear function of magnetic field and can be qualitatively characterized in terms of the theory of the Zeeman giant effect in diluted magnetic semiconductors. Other mechanisms of magnetic field influence on ac transport in MIS structures, specifically, on the impurity state recharge, cannot be disregarded either. This points calls for further investigation. Obtained data may provide a deeper insight into the nature of magnetoresistive effects in semiconductors and be used to design new-generation microelectronic devices.
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