Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (5)

Каталог журналов библиотеки ИФ СО РАН (1)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=Interfaces<.>)

Общее количество найденных документов : 47
Показаны документы с 1 по 20

1-20 21-40 41-47

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Popkov S. I., Terent'ev K. Yu., Vasil'ev A. D.
Заглавие : Forming High-Temperature Superconducting Layers at the Interfaces between Nonsuperconducting Phases
Место публикации : Tech. Phys. Lett. - 2020. - Vol. 46, Is. 10. - P.1004-1007. - ISSN 10637850 (ISSN), DOI 10.1134/S1063785020100247
Примечания : Cited References: 14. - The authors are grateful to D.M. Gokhfeld for comments made during the discussion of the results. The results were obtained using a Bruker D8Advance diffractometer (Bruker AXS) and the Quantum Design PPMS vibrating sample magnetometer of the Krasnoyarsk Regional Center for Collective Use, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences
Аннотация: An alternative technique for synthesizing high-temperature superconductor samples is proposed, in which superconducting layers should form on the surface of hard-melting Ho2BaCuO5 green phase grains immersed in the liquid phase BaCuO2 + CuO.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Liu, Youquan, Mei, Dajiang, Wang, Naizheng, Molokeev M. S., Jiang, Xingxing, Lin, Zheshuai
Заглавие : Intrinsic isotropic near-zero thermal expansion in Zn4B6O12X (X = O, S, Se)
Место публикации : ACS Appl. Mater. Interfaces. - 2020. - Vol. 12, Is. 34. - P.38435-38440. - ISSN 1944-8244, DOI 10.1021/acsami.0c12351. - ISSN 1944-8252(eISSN)
Примечания : Cited References: 43. - This work was supported by the National Scientific Foundations of China (Grants 51872297, 51702330, 11974360, 51972208, 51890864, and 51802321), Russian Foundation for Basic Research (Grant 17-52-53031), and Fujian Institute of Innovation (FJCXY18010201) in CAS. X.J. acknowledges the support from the Youth Innovation Promotion Association in CAS (Grant 2017035) and Youth Talent Promotion Project from China Association for Science and Technology
Предметные рубрики: CRYSTAL
Аннотация: Zero thermal expansion (ZTE) materials, keeping size constant as temperature varies, are valuable for resisting the deterioration of the performance from environmental temperature fluctuation, but they are rarely discovered due to the counterintuitive temperature-size effect. Herein, we demonstrate that a family of borates with sodalite cage structure, Zn4B6O12X (X = O, S, Se), exhibits intrinsic isotropic near-ZTE behaviors from 5 to 300 K. The very low thermal expansion is mainly owing to the coupling rotation of [BO4] rigid groups constrained by the bonds between Zn and cage-edged O atoms, while the central atoms in the cage have a negligible contribution. Our study has significant implications on the understanding of the ZTE mechanism and exploration of new ZTE materials.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Tyurnev V. V., Voloshin A. S., Leksikov An. A., Galeev R. G., Shabanov V. F.
Заглавие : A Bandpass Filter Based on Dielectric Layers with a Strip Conductor Subwavelength Grating at Their Interfaces
Место публикации : Dokl. Phys. - 2020. - Vol. 65, Is. 9. - P.343-348. - ISSN 10283358 (ISSN), DOI 10.1134/S1028335820090013
Примечания : Cited References: 12. - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, state assignment no. FEFE-2020-0013 “Development of the Theory of Self-Configurable Machine-Learning Algorithms for Simulating and Predicting Characteristics of Complex Systems”
Аннотация: The design of a multilayer bandpass filter has been investigated, in which each of the half-wavelength resonators consists of two dielectric layers with outer strip conductor gratings in the form of square grids and inner ones in the form of square patches. The grids serve as mirrors with specified reflective properties, which ensure optimal couplings of the outer resonators with free space and optimal coupling between the resonators. The patch gratings make it possible to tune the resonator eigenfrequency during the filter synthesis. The efficiency of the quasi-static calculation of the frequency response for the layered structure is shown for the case of a lattice period smaller than the wavelength in the dielectric and much smaller than the layer thickness. Since the calculation does not require much computing power, the parametric synthesis of the device can be performed on a conventional personal computer. The measured characteristics of the prototype of the synthesized third-order filter with a fractional passband width of ∼10% and a central passband frequency of ∼10.6 GHz are in good agreement with the calculation. The proposed design allows one to fabricate multilayer panels radio transparent in a certain frequency band for hiding microwave antennas.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Ovchinnikov S. G., Maximova O. A., Lyashchenko S. A., Yakovlev I. A., Varnakov S. N.
Заглавие : Effect of interfaces in the multilayer structures on the electronic states
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics, Siberian Federal Univercity
Место публикации : International workshop on the properties of functional MAX-materials (2nd FunMax): book of abstracts/ org. com. M. Farle [et al.]. - 2021. - P.15
Материалы конференции,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Baron F. A., Mikhlin, Yurii L., Molokeev M. S., Rautskiy M. V., Tarasov I. A., Volochaev M. N., Shanidze L. V., Lukyanenko A. V., Smolyarova T. E., Konovalov, Stepan O., Zelenov, Fyodor, V, Tarasov A. S., Volkov N. V.
Заглавие : Structural, optical, and electronic properties of Cu-doped TiNxOy grown by ammonothermal atomic layer deposition
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation of World Tier Laboratories [075-15-2019-1886]
Место публикации : ACS Appl. Mater. Interfaces. - 2021. - Vol. 13, Is. 27. - P.32531-32541. - ISSN 1944-8244, DOI 10.1021/acsami.1c08036. - ISSN 1944-8252(eISSN)
Примечания : Cited References: 69. - This research was funded by the RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (project code 20-42-240013) and by the grant of the Government of the Russian Federation for Creation of World Tier Laboratories (contract no. 075-15-2019-1886)
Предметные рубрики: OXYNITRIDE THIN-FILMS
TITANIUM-NITRIDE
CONFORMAL TIN
Аннотация: Copper-doped titanium oxynitride (TiNxOy) thin films were grown by atomic layer deposition (ALD) using the TiCl4 precursor, NH3, and O2 at 420 °C. Forming gas was used to reduce the background oxygen concentration and to transfer the copper atoms in an ALD chamber prior to the growth initiation of Cu-doped TiNxOy. Such forming gas-mediated Cu-doping of TiNxOy films had a pronounced effect on their resistivity, which dropped from 484 ± 8 to 202 ± 4 μΩ cm, and also on the resistance temperature coefficient (TCR), which decreased from 1000 to 150 ppm °C–1. We explored physical mechanisms causing this reduction by performing comparative analysis of atomic force microscopy, X-ray photoemission spectroscopy, X-ray diffraction, optical spectra, low-temperature transport, and Hall measurement data for the samples grown with and without forming gas doping. The difference in the oxygen concentration between the films did not exceed 6%. Copper segregated to the TiNxOy surface where its concentration reached 0.72%, but its penetration depth was less than 10 nm. Pronounced effects of the copper doping by forming gas included the TiNxOy film crystallite average size decrease from 57–59 to 32–34 nm, considerably finer surface granularity, electron concentration increase from 2.2(3) × 1022 to 3.5(1) × 1022 cm–3, and the electron mobility improvement from 0.56(4) to 0.92(2) cm2 V–1 s–1. The DC resistivity versus temperature R(T) measurements from 4.2 to 300 K showed a Cu-induced phase transition from a disordered to semimetallic state. The resistivity of Cu-doped TiNxOy films decreased with the temperature increase at low temperatures and reached the minimum near T = 50 K revealing signatures of the quantum interference effects similar to 2D Cu thin films, and then, semimetallic behavior was observed at higher temperatures. In TiNxOy films grown without forming gas, the resistivity decreased with the temperature increase as R(T) = – 1.88T0.6 + 604 μΩ cm with no semimetallic behavior observed. The medium range resistivity and low TCR of Cu-doped TiNxOy make this material an attractive choice for improved matching resistors in RF analog circuits and Si complementary metal–oxide–semiconductor integrated circuits.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Avramov P. V.
Заглавие : The role of interfaces in determination of electronic properties of complex silicon nanoclusters
Коллективы : "Trends in Nanomechanics and Nanoengineering", workshop, Сибирский федеральный университет, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : Workshop "Trends in Nanomechanics and Nanoengineering": book of abstracts/ предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P.11
Материалы семинара
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuklin A. V., Kuzubov A. A., Kovaleva E. A., Lee, Hyosun, Sorokin, Pavel B., Sakai, Seiji, Entani, Shiro, Naramoto, Hiroshi, Avramov P. V.
Заглавие : The direct exchange mechanism of induced spin polarization of low-dimensional π-conjugated carbon- and h-BN fragments at LSMO(001) MnO-terminated interfaces
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [14-13-00139]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.23-29. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.096. - ISSN 1873-4766(eISSN)
Примечания : Cited References:70. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow and the ICC of Novosibirsk State University for providing the computing resources. Russian Science Foundation (Grant No 14-13-00139) supported the work of Russian team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
THIN-FILMS
GIANT MAGNETORESISTANCE
METALLIC
Ключевые слова (''Своб.индексиров.''): graphene nanoribbons--dft--lsmo thin films--induced spin polarization--h-bn nanoribbons--half-metal
Аннотация: Induced spin polarization of π-conjugated carbon and h-BN low dimensional fragments at the interfaces formed by deposition of pentacene molecule and narrow zigzag graphene and h-BN nanoribbons on MnO2-terminated LSMO(001) thin film was studied using GGA PBE+U PAW D3-corrected approach. Induced spin polarization of π-conjugated low-dimensional fragments is caused by direct exchange with Mn ions of LSMO(001) MnO-derived surface. Due to direct exchange, the pentacene molecule changes its diamagnetic narrow-band gap semiconducting nature to the ferromagnetic semiconducting state with 0.15 eV energy shift between spin-up and spin-down valence bands and total magnetic moment of 0.11 μB. Direct exchange converts graphene nanoribbon to 100% spin-polarized half-metal with large amplitude of spin-up electronic density at the Fermi level. The direct exchange narrows the h-BN nanoribbon band gap from 4.04 to 1.72 eV in spin-up channel and converts the h-BN ribbon semiconducting diamagnetic nature to a semiconducting magnetic one. The electronic structure calculations demonstrate a possibility to control the spin properties of low-dimensional π-conjugated carbon and h-BN fragments by direct exchange with MnO-derived LSMO(001) surface for spin-related applications.
Смотреть статью,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin K. G., Yarikov S. A., Patrin G. S., Yakovchuk V. Yu., Lyamkin A. I.
Заглавие : Magnetic resonance studies of three-layer FeNi/Bi/FeNi films
Место публикации : J. Exp. Theor. Phys.: Maik Nauka-Interperiodica Publishing, 2017. - Vol. 124, Is. 5. - P.779-785. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776117040069
Примечания : Cited References: 28
Ключевые слова (''Своб.индексиров.''): anisotropy--binary alloys--ferromagnetic resonance--interface states--interfaces (materials)--iron alloys--magnetic resonance--magnetism--nickel alloys--electron magnetic resonance--film structure--interface anisotropy--interlayer coupling--magnetic state--temperature dependence--three-layer--magnetic anisotropy
Аннотация: The interlayer coupling in three-layer FeNi/Bi/FeNi films is studied by electron magnetic resonance. The magnetic anisotropy at the permalloy–bismuth interface is shown to play a significant role in the formation of the magnetic state of the film structure. The interlayer coupling oscillation period is found to be about 8 nm. The interlayer coupling and the interface anisotropy and their temperature dependences are determined. © 2017, Pleiades Publishing, Inc.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bykov A. A., Terent'ev K. Yu., Gokhfeld D. M., Savitskaya N. E., Popkov S. I., Petrov M. I.
Заглавие : Superconductivity on interfaces of nonsuperconducting granules La2CuO4 and La1.56Sr0.44CuO4
Место публикации : J. Supercond. Nov. Magn. - 2018. - Vol. 31, Is. 12. - P.3867–3874. - ISSN 15571939 (ISSN), DOI 10.1007/s10948-018-4668-x
Примечания : Cited References: 19. - The authors are grateful to D.A. Balaev for fruitful discussions, and I.V. Nemtsev for electronic microscope measurements in the center for shared use, KSC SB RAS. The work is supported by the Russian Science Foundation (project No. 17-72-10067).
Ключевые слова (''Своб.индексиров.''): magnetic properties--superconductivity--oxide superconductors--grain boundaries--lco--lsco--josephson media
Аннотация: Composite materials fabricated by annealing of nonsuperconducting ceramics La2CuO4 and La1.56Sr0.44CuO4 at 910 °C during various time are investigated. Areas of superconducting La1.85Sr0.15CuO4 phase arises at boundaries of contacting nonsuperconducting granules. The volume fraction of the superconducting phase increases with increasing annealing time. A model describing the magnetic and transport properties of the samples at low magnetic fields is constructed. The magnetotransport characteristics of obtained samples at low magnetic fields (∼ 100 Oe) are defined by weak links network formed by superconducting areas. At high fields, behavior of the system is defined by a magnetization of the disconnected superconducting islands. The average size of the superconducting areas has been estimated from an extended critical state model.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhou, Guojun, Jiang, Xingxing, Zhao, Jing, Molokeev M. S., Lin, Zheshuai, Liu, Quanlin, Xia, Zhiguo
Заглавие : Two-dimensional-layered perovskite ALaTa2O7:Bi3+ (A = K and Na) phosphors with versatile structures and tunable photoluminescence
Место публикации : ACS Appl. Mater. Interfaces. - 2018. - Vol. 10, Is. 29. - P.24648-24655. - ISSN 1944-8244, DOI 10.1021/acsami.8b08129
Примечания : Cited References: 48. - The authors acknowledge the support from the National Natural Science Foundation of China (Nos. 51722202, 91622125, and 51572023) and the Natural Science Foundations of Beijing (2172036) and RFBR (17-52-53031).
Предметные рубрики: GENERALIZED GRADIENT APPROXIMATION
YELLOW-EMITTING PHOSPHOR
Ключевые слова (''Своб.индексиров.''): 2d-layered perovskite--bi3+ emission--ion exchange--photoluminescence tuning--white light leds
Аннотация: Topological chemical reaction methods are indispensable for fabricating new materials or optimizing their functional properties, which is particularly important for two-dimensional (2D)-layered compounds with versatile structures. Herein, we demonstrate a low-temperature (∼350 °C) ion exchange approach to prefabricate metastable phosphors ALa1–xTa2O7:xBi3+ (A = K and Na) with RbLa1–xTa2O7:xBi3+ serving as precursors. The as-prepared ALa0.98Ta2O7:0.02 Bi3+ (A = Rb, K, and Na) share the same Dion–Jacobson type 2D-layered perovskite phase, and photoluminescence analyses show that ALa0.98Ta2O7:0.02 Bi3+ (A = Rb, K, and Na) phosphors exhibit broad emission bands peaking at 540, 550, and 510 nm, respectively, which are attributed to the nonradiative transition of Bi3+ from excited state 3P1 or 3P0 to ground state 1S0. The various Bi3+ local environments at the crystallographic sites enable the different distributions of emission and excitation spectra, and the photoluminescence tuning of ALa0.98Ta2O7:0.02 Bi3+ (A = Rb, K, and Na) phosphors are realized through alkali metal ion exchange. Notably, the combination of superior trivalent bismuth emission and low-temperature ion exchange synthesis leads to a novel yellow-emitting K(La0.98Bi0.02)Ta2O7 phosphor which is successfully applied in a white LED device based on a commercially available 365 nm LED chip. Our realizable cases of this low-temperature ion exchange strategy could promote exploration into metastable phosphors with intriguing properties.
Смотреть статью,
WOS,
Читать в сети ИФ
Найти похожие

11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Han J., Pan F., Molokeev M. S., Dai J., Peng M., Zhou W., Wang J.
Заглавие : Redefinition of crystal structure and Bi3+ yellow luminescence with strong near-ultraviolet excitation in La3BWO9:Bi3+ phosphor for white light-emitting diodes
Место публикации : ACS Appl. Mater. Interfaces. - 2018. - Vol. 10, Is. 16. - P.13660-13668. - ISSN 19448244 (ISSN), DOI 10.1021/acsami.8b00808
Примечания : Cited References: 40
Ключевые слова (''Своб.индексиров.''): bi3+ luminescence--borotungstates--crystal structure--wleds--x-ray diffraction--yellow phosphor
Аннотация: Bi3+-activated photonic materials have received increased interest recently because they can be excited effectively with near-ultraviolet (NUV) but not visible light, thereby avoiding the reabsorption among phosphors, which cannot be solved intrinsically by traditional rare earth (e.g., Eu2+, Ce3+) phosphors. Such unique property suggests their potential application in NUV chip-based WLEDs. However, few Bi3+ phosphors exhibit strong excitation peak in NUV, though the excitation tail of some can extend to NUV. Herein, we report a novel yellow-emitting La3BWO9:Bi3+ (LBW:Bi3+) phosphor with strong NUV excitation. The photoluminescence (PL) spectroscopy analysis indicates that there are two Bi3+ luminescent centers in LBW:Bi3+ phosphor, which is clearly in contradiction with the established hexagonal structure of La3BWO9 with P63 space group because only one La site in this structure can accommodate Bi3+ ions. Combining the luminescent properties of Bi3+ with Rietveld refinement, La3BWO9 was redefined as a trigonal structure with the lower space group of P3 in which there are two independent crystallographic La sites. In addition, the rationalization of P3 space group was further confirmed by the finding of the reflection (0001) according to the extinction rule. Therefore, the PL behavior of Bi3+ can act as a complementary tool to determinate the real crystal structure especially when it is hard to distinguish by conventional X-ray diffraction techniques.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ovchinnikov S. G., Maximova O. A., Lyashchenko S. A., Yakovlev I. A., Varnakov S. N.
Заглавие : Role of interfaces in the permittivity tensor of thin layers of a ferromagnetic metal
Место публикации : JETP Letters. - 2021. - Vol. 114, Is. 3. - P.163-165. - ISSN 00213640 (ISSN), DOI 10.1134/S0021364021150066
Примечания : Cited References: 13. - This work was supported by the Russian Science Foundation, project no. 21-12-00226, http://rscf.ru/project/21-12-00226/
Аннотация: It is known from experimental studies that the components of the permittivity tensor ε depend on layer thicknesses of multilayer thin films, and for nanometer layers, it is necessary to additionally consider the interlayer interfaces. This study provides an answer to the question of what is the reason for the influence of these interfaces on film properties. It is shown that the contribution of interband matrix elements for ferromagnetic films with off-diagonal components of the permittivity tensor determines the ratio between the diagonal and off-diagonal components of the tensor ε at a ferromagnetic layer thickness of about 10 nm.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Prishchepa O. O., Zyryanov V. Ya., Gardymova A. P., Shabanov V. F.
Заглавие : Optical textures and orientational structures of nematic and cholesteric droplets with heterogeneous boundary conditions
Место публикации : Mol. Cryst. Liquid Cryst. - 2008. - Vol. 489, Is. 1. - P.84-93. - ISSN 1542-1406, DOI 10.1080/15421400802219817
Примечания : Cited Reference Count: 17. - Гранты: This work was supported in part by the grants of DSP, No 2.1.1.1814; RFBR, No 0803-01007; Council of the President of the RF for Support of Young Scientists and Leading Scientific Schools (projects NSh-3818-2008.3, MK-3624.2007.2); RAS, No 8.1, 2.10.2; SB RAS, No 33.Финансирующая организация: DSP [2.1.1.1814]; RFBR [0803-01007]; Young Scientists and Leading Scientific Schools [NSh-3818-2008.3, MK-3624.2007.2]; RAS [8.1, 2.10.2]; SB RAS [33]
Предметные рубрики: LIQUID-CRYSTAL DROPLETS
ELECTRIC-FIELD
BIPOLAR
Ключевые слова (''Своб.индексиров.''): director configuration--interfaces--nematic and cholesteric droplets--surfactant--director configuration--interfaces--nematic and cholesteric droplets--surfactant--boundary value problems--drop formation--drops--fluid mechanics--phospholipids--surface active agents--boundary conditioning--director configuration--homeotropic--interfaces--nematic and cholesteric droplets--nematic droplets--nematics--optical textures--orientational structures--surface anchoring--surfactant--boundary conditions
Аннотация: Brief review of the orientational structures within the droplets of chiral as well as achiral nematics with the heterogeneous boundary conditions is reported. The modification of boundary conditions in the 5CB/polyvinylbutyral and LN-396/cholesterylacetate/polyvinylbutyral compositions with the planar anchoring at the interface is created by addition of the homeotropic surfactant (lecithin). Sequences of the novel stable and non-stable orientational structures being realized within the droplets of achiral nematic are presented. For the LN-396 nematic droplets doped by cholesterylacetate the formation of a spherulite structure has been shown when the tangential surface anchoring is modified to the homeotropic one.
WOS,
Scopus,
eLibrary
Найти похожие

14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Cheng Y., Yang J., Luo Y., Li W., Vtyurin A. N., Jiang Q., Dunn S., Yan H.
Заглавие : Enhancement of thermoelectric performance in Bi0.5Sb1.5Te3 particulate composites including ferroelectric BaTiO3 nanodots
Место публикации : ACS Appl. Mater. Interfaces. - 2022. - Vol. 14, Is. 32. - P.37204-37212. - ISSN 19448244 (ISSN), DOI 10.1021/acsami.2c10424
Примечания : Cited References: 40. - This work was supported by the National Natural Science Foundation of China (51772019, 51572098, and 51632006) and the NSFC-Royal Society joint project (51811530307 and IEC\NSFC\170290)
Аннотация: An increasing number of studies have reported producing composite structures by combining thermoelectric and functional materials. However, combining energy filtering and ferroelectric polarization to enhance the dimensionless figure of merit thermoelectric ZT remains elusive. Here we report a composite that contains nanostructured BaTiO3 embedded in a Bi0.5Sb1.5Te3 matrix. We show that ferroelectric BaTiO3 particles are evenly composited with Bi0.5Sb1.5Te3 grains reducing the concentration of free charge carriers with increasing BaTiO3 content. Additionally, as a result of the energy-filtering effect and ferroelectric polarization, the Seebeck coefficient was improved by ∼10% with a ∼10% improvement in power factors. The BaTiO3 phase can effectively scatters phonons reducing lattice thermal conductivity κl (0.5 W m–1 K–1) and increasing ZT to 1.31 at 363 K in Bi0.5Sb1.5Te3 composites with 2 vol % BaTiO3 content giving an improvement of ∼25% over pure Bi0.5Sb1.5Te3. Our work indicates that the introduction of ferroelectric nanoparticles is an effective method for optimizing the ZT of Bi0.5Sb1.5Te3-based thermoelectric materials.
Смотреть статью,
Scopus
Найти похожие

15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Voronin A. S., Fadeev Y. V., Ivanchenko F. S., Dobrosmyslov S. S., Makeev M. O., Mikhalev P. A., Osipkov A. S., Damaratsky I. A., Ryzhenko D. S., Yurkov G. Y., Simunin M. M., Volochaev M. N., Tambasov I. A., Nedelin S. V., Zolotovsky N. A., Bainov D. D., Khartov S. V.
Заглавие : Original concept of cracked template with controlled peeling of the cells perimeter for high performance transparent EMI shielding films
Место публикации : Surf. Interfaces. - 2023. - Vol. 38. - Ст.102793. - ISSN 24680230 (eISSN), DOI 10.1016/j.surfin.2023.102793
Примечания : Cited References: 73. - The development of the processes of synthesis of a cracked template and conceptualization and optimization parameters peeling cells perimeter of the cracked template for the requirements of the final products were carried out with the financial support of the Ministry of Science and Higher Education of the Russian Federation within the framework of state task No. 0287–2021–0026. The development of the processes of the formation of metal films and the study of the structural, optical, electrical and shielding properties of the samples were carried out with the financial support of the Ministry of Science and Higher Education of the Russian Federation within the framework of state assignment No. FSFN-2022–0007. The physicochemical analysis of materials was carried out on equipment from the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS». We would like to thank Anastasia Tamarovskaya for the macro photo of thick Ag mesh samples.
Аннотация: The problem of sputtering of thick metal films on micro and nanotemplates is important for obtaining mesh transparent conductors with excellent optoelectric characteristics. In this work, we demonstrate for the first time the possibility of controlling the degree of peeling of the cell perimeter from the substrate for a cracked template based on egg white by alternating the operations of moistening the template with saturated water vapor and shock drying with hot air. Local peeling of the cracked template cells perimeter makes it possible to increase the thickness of the metal sputtered on the cracked template by more than 1 µm, which is not achievable for other lithographic approaches. Our technique was used to obtain thick Ag meshes with a low sheet resistance of no more than 1.59 Ω/sq and a transparency of about 89.1%. The thick Ag meshes show a shielding efficiency (SE) of 49 dB or 99.998% of the incident power of an electromagnetic wave at a frequency of 1 GHz. In a sandwich geometry, thick Ag meshes, which simulates a real shielding window, the shielding efficiency (SE) reaches 71 dB with a transparency of more than 80%.
Смотреть статью,
WOS,
Читать в сети ИФ
Найти похожие

16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smirnov, Mikhail, Roginskii, Evgenii, Savin, Aleksandr, Oreshonkov A. S., Pankin, Dmitrii
Заглавие : Density-functional study of the Si/SiO2 interfaces in short-period superlattices: Vibrational states and Raman spectra
Колич.характеристики :18 с
Место публикации : Photonics. - 2023. - Vol. 10, Is. 8. - Ст.902. - ISSN 23046732 (eISSN), DOI 10.3390/photonics10080902
Примечания : Cited References: 61. - The study was supported by grants from the Russian Science Foundation (project No. 22-22-20021) and the Saint-Petersburg Science Center (project No. 32/2022), using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State UniversityThe study was performed using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. The authors thank Konstantin Smirnov for his valuable advice. The calculations were also performed in part using the facilities of the JSCC supercomputer center at RAS and the Konstantinov computational center at the Ioffe Institute
Аннотация: Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces.
Смотреть статью,
Scopus,
WOS
Найти похожие

17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Visotin M. A., Sosedkin, Oleg A., Eremkin, Egor V.
Заглавие : MD investigations of of heat flow throw interfaces in 1D systems
Место публикации : J. Sib. Fed. Univ. Math. Phys. - 2023. - Vol. 16, Is. 3. - P.385-396. - ISSN 19971397 (ISSN); Журн. СФУ. Матем. и физ. - ISSN 23136022 (eISSN)
Примечания : Cited References: 26
Аннотация: Molecular dynamic calculations (MD) of heterogeneous 1D periodical systems are presented. It is proposed the new technique of direct calculations of thermal conductivity, where there is only one thermostat in one piece of unit cell as well as another piece where artificial friction forces act on atoms. With the help of this scheme, calculations of 1D heterogeneous systems having regions with atoms of different atomic masses are presented. It is shown that the difference in atomic masses in adjacent regions of the systems leads to a significant temperature jump at interfaces between these regions. This temperature jump exists independently of the mass ratio on both sides of the interface.The reasons for these jumps are discussed. It is also shown that, by changing the alternation of regions with different masses of atoms, it is possible to reduce the total thermal conductivity of the system by several times. On the base of these results, we can hope that for three-dimensional structures also, the thermal conductivity can be significantly reduced.Представлены молекулярно-динамические расчеты (МД) гетерогенных одномерных периодических систем. Предлагается новая методика прямых расчетов теплопроводности, при которой в одном элементе элементарной ячейки находится только один термостат, а в другом элементе действуют силы искусственного трения на атомы. С помощью этой схемы представлены расчеты одномерных гетерогенных систем, имеющих области с атомами разной атомной массы. Показано, что различие атомных масс в соседних областях систем приводит к значительному скачку температуры на границах раздела между этими областями. Этот скачок температуры существует независимо от отношения масс по обе стороны от границы раздела. Обсуждаются причины этих скачков. Также показано, что, изменяя чередование областей с разной массой атомов, можно в несколько раз уменьшить общую теплопроводность системы. На основании этих результатов можно надеяться, что и для трехмерных структур теплопроводность может быть значительно снижена.
Смотреть статью,
РИНЦ,
Читать в сети ИФ
Найти похожие

18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Man'kov Yu. I., Tsikalov D. S.
Заглавие : High-frequency susceptibility of a multilayered ferromagnetic system with two-dimensional inhomogeneities
Место публикации : Phys. Solid State. - NEW YORK: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2010. - Vol. 52, Is. 3. - С. 544-553. - MAR. - ISSN 1063-7834, DOI 10.1134/S1063783410030157
Примечания : Cited Reference Count: 24. - Гранты: This study was supported in part by the Council on Grants from the President of the Russian Federation for the State Support of Scientific Investigations performed by the Leading Scientific Schools (grant no. 3818.2008.3), the Presidium of the Russian Academy of Sciences (Program no. 27.1), and the Ministry of Education and Science within the framework of the Federal Program (State Contract no. 2.740.11.0220).Финансирующая организация: Russian Federation [3818.2008.3]; Presidium of the Russian Academy of Sciences [27.1]; Ministry of Education and Science [2.740.11.0220]
Предметные рубрики: SPIN-WAVE SUSCEPTIBILITY
SPECTRUM
SUPERLATTICES
INTERFACES
Аннотация: This paper reports on the results of the investigation of the high-frequency susceptibility of a layered ferromagnetic structure in which, apart from a periodic change in the magnetic anisotropy parameter from layer to layer, this parameter varies along layers according to a random law (the superlattice with two-dimensional phase inhomogeneities). The evolution of the frequency dependence of the imaginary part of the averaged Green's function in the range of the energy gap (band gap) in the spectrum of waves propagating along the superlattice axis due to the change in the relative root-mean-square fluctuations of the phase gamma 2 has been studied at the boundaries of the odd Brillouin zones. It has been found that, for all odd Brillouin zones, the imaginary part of the Green's function exhibits a universal behavior: the peak corresponding to the edge of the band gap with a lower frequency remains unchanged, and the peak corresponding to the edge of the band gap with a higher frequency is smoothed with an increase in the quantity gamma(2). These effects, which were initially revealed at the boundary of the first Brillouin zone of the sinusoidal superlattice, have been explained, as before, by the specific features of the energy conservation laws for the incident and scattered waves in the lattice with two-dimensional inhomogeneities. It has been demonstrated that an increase in the Brillouin zone number leads to a decrease in the value of gamma(2) at which the peak at the edge of the band gap with a higher frequency disappears.
WOS,
Scopus,
eLibrary
Найти похожие

19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Li M., Zhao Y., Zhang S., Yang R., Qiu W., Wang P., Molokeev M. S., Ye S.
Заглавие : Understanding the energy barriers of the reversible ion exchange process in CsPbBr1.5Cl1.5@Y2O3:Eu3+ macroporous composites and their application in anti-counterfeiting codes
Место публикации : ACS Appl. Mater. Interfaces. - 2021. - Vol. 13, Is. 50. - P.60362-60372. - ISSN 19448244 (ISSN), DOI 10.1021/acsami.1c18030
Примечания : Cited References: 49. - This work is financially jointly supported by the Guangzhou Science & Technology Project (202007020005), NSFC (Grant No. 51772104), the Fundamental Research Funds for the Central Universities (2020ZYGXZR096), Local Innovative and Research Teams Project of Guangdong Pearl River Talents Program (2017BT01X137), and RFBR according to the research project No. 19-52-80003
Аннотация: The photoinduced reversible ion exchanges in mixed halide perovskites and the resulting luminescent variations make them promising for constructing anti-counterfeiting patterns; however, its understanding in an interfacial view is lacking. In this work, nominal CsPbBr1.5Cl1.5 (CPBC) nanocrystals (NCs) were introduced into macroporous Y2O3:Eu3+ (MYE) to realize emission color variations from red emission of MYE to green emission of halide NCs. The large surface area of MYE helps the formation of Y–Cl/Br bonds which induces fluctuation in the halide composition, while water and intrinsic halogen defects have also been proved to be essential in the reversible ion segregation process. The PL variations of several samples with different pore sizes were investigated upon irradiation of light with different photon energies and excitation power at certain temperatures. According to combined results of density functional theory calculation, the research reveals the presence of two energy barriers that would be overcome correspondingly by the excitation photon and the concentration difference in the ion exchange and recovery process. A photochromic anti-counterfeiting quick response (QR) code was constructed facilely with the perovskite composites. This work provides a deeper understanding from the interfacial aspect and also proposes a feasible strategy to realize reversible PL variation for anti-counterfeiting applications.
Смотреть статью,
Scopus,
WOS
Найти похожие