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A complex of ceftriaxone with Pb(II): synthesis, characterization, and antibacterial activity study / A. O. Lykhin [et al.] // J. Coord. Chem. - 2014. - Vol. 67, Is. 16. - З. 2783-2794, DOI 10.1080/00958972.2014.938065. - Cited References: 48. - The reported study was supported by RFBR, research project No. 14-03-31, 170 MOJI_a and Krasnoyarsk regional fund for supporting scientific and technological activities. We thank the Center for Equipment Joint Use of the Siberian Federal University. We are grateful to the HPC Research Departments of Siberian Federal University and Moscow University Supercomputing Center (SKIF MSU "Chebyshev") for the access to the high-performance computer clusters. . - ISSN 0095-8972. - ISSN 1029-0389

РУБ Chemistry, Inorganic & Nuclear
Рубрики:
BETA-LACTAM ANTIBIOTICS
   TERNARY COMPLEX
   METAL-COMPLEXES
   BASIS-SETS
   3 DECADES
   RESISTANCE
   COPPER(II)
   CEPHALOSPORINS
   EVOLUTION
   1ST-ROW
Кл.слова (ненормированные):
Ceftriaxone lead(II) complex -- DFT -- IR spectroscopy -- TGA -- Antibacterial screening
Аннотация: A Pb(II) complex with ceftriaxone (H2Ceftria) antibiotic was synthesized by reaction of ceftriaxone disodium salt (hemi)heptahydrate with lead nitrate in water–ethanol medium. The complex was characterized on the basis of complexometric titration, spectrophotometric and thermogravimetric analyses, capillary electrophoresis, IR, Raman and UV–vis spectroscopies, and density functional theory calculations. Pb(II) is five-coordinate with distorted square pyramidal geometry. The coordination of Ceftria2− to Pb(II) occurs through N and O of the triazine, lactam carbonyl, carboxylate, and amine groups. The antibacterial activity study showed that Klebsiella pneumoniae is resistant to [Pb(Ceftria)]·3H2O. The antibacterial activity of [Pb(Ceftria)]·3H2O against Staphylococcus aureus is reduced compared with ceftriaxone. In contrast, the antibacterial activity of [Pb(Ceftria)]·3H2O against Escherichia coli is 28% higher than that of ceftriaxone antibiotic.

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Держатели документа:
Siberian Fed Univ, Dept Chem, Krasnoyarsk, Russia
Siberian State Aerosp Univ, Informat Sci & Telecommun Inst, Krasnoyarsk, Russia
Russian Acad Sci, LV Kirensky Inst Phys, Siberian Branch, Krasnoyarsk, Russia
Siberian State Technol Univ, Dept Phys, Krasnoyarsk, Russia
Univ Nevada, Dept Chem, Reno, NV 89557 USA

Доп.точки доступа:
Lykhin, A. O.; Лыхин А. О.; Novikova, G. V.; Новикова Г. В.; Kuzubov, A. A.; Кузубов, Александр Александрович; Staloverova, N. A.; Сталоверова Н. А.; Sarmatova, N. I.; Сарматова Н. И.; Varganov, S. A.; Варганов, Сергей Александрович; Krasnov, P. O.; Краснов, Павел Олегович; RFBR [14-03-31, 170 MOJI_a]
}
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Fransson, J.
A perfect spin-filter quantum dot system / J. . Fransson, I. . Sandalov, O. . Eriksson // J. Phys.: Condens. Matter. - 2004. - Vol. 16, Is. 16. - P. L249-L254, DOI 10.1088/0953-8984/16/16/L03. - Cited References: 39 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
NARROW ENERGY BANDS
   ELECTRON CORRELATIONS
   MAGNETIC-FIELD
   MAGNETOTRANSPORT
   CONDUCTANCE
   RESISTANCE
   BARRIER
   FORMULA
   VALVE
   LIMIT
Кл.слова (ненормированные):
Electric potential -- Electron tunneling -- Magnetic couplings -- Magnetic fields -- Magnetic filters -- Transport properties -- Electron correlations -- Magnetic contacts -- Source-drain voltage -- Spin projections -- Semiconductor quantum dots
Аннотация: The discovery of a novel effect in the transport through a QD spin-dependently coupled to magnetic contacts is reported. For a finite range of source-drain voltages the spin projections of the current cancel exactly, resulting in a completely suppressed output current. The spin down current behaves as one normally expects whereas the spin up current becomes negative. As the source-drain voltage is increased the spin up current eventually becomes positive. Thus, tuning the source-drain voltage such that the spin up current vanishes will result in a perfect spin filter.

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Держатели документа:
Royal Inst Technol, Dept Phys, KTH, SE-10691 Stockholm, Sweden
Univ Uppsala, Dept Phys, SE-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Max Planck Inst Phys Complex Syst, D-01187 Dresden, Germany
ИФ СО РАН
Department of Physics, Royal Institute of Technology (KTH), SE-106 91 Stockholm, Sweden
Physics Department, Uppsala University, Box 530, SE-751 21 Uppsala, Sweden
Kirensky Institute of Physics, RAS, 660036 Krasnoyarsk, Russian Federation
Max-Plank-Inst. Phys. Complex Sys., Nothnitzer Stra?e 38, 01187 Dresden, Germany
Dept. of Mat. Sci. and Engineering, Royal Institute of Technology, SE-100 44 Stockholm, Sweden

Доп.точки доступа:
Sandalov, I.; Eriksson, O.
}
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Andreev reflections and experimental current-voltage characteristics of break junctions of polycrystalline HTSC / M. I. Petrov [et al.] // Physica C. - 2004. - Vol. 408: 7th International Conference on Materials and Mechanisms of Superconductive and High Temperature Superconductors (MAY 25-30, 2003, Rio de Janeiro, BRAZIL). - P. 620-622, DOI 10.1016/j.physc.2004.03.085. - Cited References: 3 . - ISSN 0921-4534

РУБ Physics, Applied

Кл.слова (ненормированные):
Andreev reflections -- break junction -- current-voltage characteristics -- Andreev reflections -- Break junction -- Current-voltage characteristics -- Andreev reflections -- Break junctions -- Elastic scattering -- Lattice defects -- Negative differential resistance -- Electric fields -- Heuristic methods -- Hysteresis -- Microcracks -- Polycrystalline materials -- Probability density function -- Quasicrystals -- Superconducting materials -- Yttrium barium copper oxides -- Current voltage characteristics
Аннотация: The temperature evolution of current-voltage characteristics (CVCs) of break junctions made from polycrystalline Y0.75Lu0.25Ba2Cu3O7 and La1.85Sr0.15CuO4 is investigated. The experimental CVCs have hysteretic features that reflect a part of a curve with negative differential resistance. The temperature evolution of the CVCs is discussed within the framework of the Kummel-Gunsenheimer-Nicolsky theory for superconductor/normal-metal/superconductor junctions considering multiple Andreev reflections. It is shown that the shape of the CVCs of break junctions is determined by the ratio of the number of "short" and "long" intergrain normal regions in the polycrystalline HTSC under investigation. (C) 2004 Elsevier B.V. All rights reserved.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany
ИФ СО РАН
Kirensky Intitute of Physics, Akademgorodok, 660036 Krasnoyarsk, Russian Federation
Reshetnev Siberian Stt. Aerosp. U., 660014 Krasnoyarsk, Russian Federation
Inst. fur Theor. Phys./Astrophys., Universitat Wurzburg, D-97074 Wurzburg, Germany

Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaihutdinov, K. A.; Kummel, R.
}
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Aplesnin, S. S.
Anomalies in magnetoresistance and in the bulk modulus for ferromagnetics with four-spin exchange interaction on the Kondo lattice / S. S. Aplesnin, N. I. Piskunova // J. Phys.: Condens. Matter. - 2006. - Vol. 18, Is. 29. - P. 6859-6868, DOI 10.1088/0953-8984/18/29/023. - Cited References: 29 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
MIXED-VALENCE MANGANITES
   PHASE-SEPARATION
   LA1-XSRXMNO3
   BEHAVIOR
   PECULIARITIES
   TRANSITION
Кл.слова (ненормированные):
Elastic moduli -- Electric resistance -- Ferromagnetism -- Function evaluation -- Paramagnetism -- Transceivers -- Adiabatic approximation -- Kondo lattice -- Paramagnetic state -- Ring exchange -- Magnetoresistance
Аннотация: The temperature dependence of resistivity and the bulk modulus are calculated on the Kondo lattice, with ring exchange between localized spins, using the spin-polaron and adiabatic approximation. Peak and zero values of the bulk modulus as functions of temperature and concentration are determined below the temperature of the transition to the paramagnetic state. The effects of the nearest order between transverse spin components and a value of the ring exchange between localized spins on magnetoresistivity are estimated.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia
ИФ СО РАН
L v Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
M F Reshetneva Aircosmic Siberian State University, Krasnoyarsk, 660014, Russian Federation

Доп.точки доступа:
Piskunova, N. I.; Аплеснин, Сергей Степанович
}
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Bio-functionalization of phytogenic Ag and ZnO nanobactericides onto cellulose films for bactericidal activity against multiple drug resistant pathogens / S. Baker [et al.] // J. Microbiol. Methods. - 2019. - Vol. 159. - P. 42-50, DOI 10.1016/j.mimet.2019.02.009. - Cited References: 59 . - ISSN 0167-7012. - ISSN 1872-8359

РУБ Biochemical Research Methods + Microbiology
Рубрики:
SILVER NANOPARTICLES
   ANTIMICROBIAL ACTIVITY
   SIZE
   COMPOSITES
   MEMBRANE
Кл.слова (ненормированные):
Bupleurum aureum -- Rio-functionalization -- Silver nanobactericides -- Zinc oxide nanobactericides -- Multi-drug resistance pathogens -- Bacterial cellulose
Аннотация: The present study describes the synthesis of silver and zinc oxide nanobactericides from the phytogenic source Bupleurum aureum The synthesized nanobactericides were characterized and evaluated for bio-functionalization onto bacterial cellulose membrane which was synthesized by Komagataeibactencylinus B-12068 culture strain. The synthesis of nanobacterides were initially confirmed using UV-Visible spectroscopy which indicated localized surface resonance (LSPR) peaks at 415 nm for silver nanobactericides and 280 nm for zinc nanobactericides. The nature of the capping agent for synthesized nanobactericides was predicted using FTIR which confirmed the presence of functional moieties. XRD analysis revealed their crystalline nature while morphological characteristics were studied using TEM which confirmed the polydispersity of nanobactericides with the average size in the range of 20-25 nm. The nanobactericides were tested for their antimicrobial activity against seven multi-drug resistant pathogens which were clinically isolated from patients suffering from a myriad of microbial infections. The tested pathogens had antimicrobial resistance to ten different antibiotics and have been reported to be the major cause of nosocomial infections. The nanobactericides displayed significant activity against the test pathogens. Silver nanobactericides showed the highest activity against Escherichia coli strain 55 with a 24 mm zone of inhibition while zinc oxide nanobactericides displayed the highest activity against methicillinresistant Staphylococcus aureus (MRSA) with a 20 mm inhibition zone. The bio- functionalized cellulose films (BCF) were characterized using SEM along with physicochemical analysis. The BCF's were evaluated for anti-bacterial activity against test pathogens which resulted in marked antimicrobial potential against multi-drug resistant bacteria and therefore has the potential to be utilized as an efficient alternative to counter drug resistant pathogens.

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Держатели документа:
Siberian Fed Univ, 79 Svobodny Pr, Krasnoyarsk 660041, Russia.
Siberian Fed Univ, Sch Fundamental Biol & Biotechnol, Krasnoyarsk, Russia.
Krasnoyasrk State Med Univ, Dept Microbiol, Krasnoyarsk Partizana Zheleznyakast 1, Krasnoyarsk 660022, Russia.
RAS, KSC SB, Fed Res Ctr, Kirensky Inst Phys, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Sch Petr & Nat Gas Engn, Krasnoyarsk, Russia.

Доп.точки доступа:
Baker, Syed; Prudnikova, Svetlana V.; Shumilova, Anna A.; Perianova, Olga V.; Zharkov, S. M.; Жарков, Сергей Михайлович; Kuzmin, A.
}
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    Bio-hybridization of nanobactericides with cellulose films for effective treatment against members of ESKAPE multi-drug-resistant pathogens / S. Baker [et al.] // Appl. Nanosci. - 2018. - Vol. 8, Is. 5. - P. 1101-1110, DOI 10.1007/s13204-018-0717-9. - Cited References: 51. - Authors are thankful for Ministry of Education and Science of the Russian Federation for providing funding under the scheme of 5-100: Russian Academic Excellence Project. Authors are grateful for facilities provided by Siberian Federal University to carry out the present study. . - ISSN 2190-5509. - ISSN 2190-5517
   Перевод заглавия: Биогибридизация нано-бактерицидов с целлюлозными пленками для эффективного воздействия на представителей группы патогенов ESKAPE, резистентных к различным препаратам

РУБ Nanoscience & Nanotechnology
Рубрики:
SILVER NANOPARTICLES
BACTERIAL CELLULOSE
ANTIBIOTIC-RESISTANCE
Кл.слова (ненормированные):
ESKAPE -- Bio-hybridization -- Silver nanobactericides -- Phytogenic -- Bactericidal activity
Аннотация: The rapid expansion of drug-resistant pathogens has created huge global impact and development of novel antimicrobial leads is one of the top priority studies in the current scenario. The present study aims to develop bio-hybridized nanocellulose films which comprise of phytogenic silver nanobactericides. The nanobactericides were synthesized by treating 1 mM silver nitrate with aqueous extract of Chamerion angustifolium which reduced the metal salt to produce polydispersed nanobactericides which were tested against the members of ESKAPE drug-resistant communities. The synthesized silver nanobactericides were subjected to characterization with UV–visible spectra which displayed maximum absorbance at 408 nm. The bio-molecular interaction of phyto-constituents to mediate synthesis and stabilization of nanobactericides was studied with Fourier-transform infrared spectroscopy (FTIR) which depicted functional groups associated with nanobactericides. The crystalline nature was studied with X-ray diffraction (XRD) which showed Bragg’s intensities at 2θ angle which denoted (111), (200), (220), and (311) planes. The morphological characteristics of silver nanobactericides were defined with transmission electron Microscopy (TEM) image which displayed polydispersity of silver nanobactericides with size ranging from 2 to 40 nm. The synthesized nanobactericides showed a significant activity against MRSA strain with 21 mm zone of inhibition. The minimal inhibitory concentration of silver nanobactericides to inhibit the growth of test pathogens was also determined which ranged between 0.625 and 1.25 μg/ml. The silver nanobactericides were bio-hybridized onto nanocellulose films produced by Komagataeibacter xylinus B-12068 culture strain. The films were dried to determine the mechanical properties which showed increased in Young’s modulus and tensile strength in comparison with control bacterial cellulose films. Overall, the results obtained in the present investigation are promising enough to report bactericidal activity of bio-hybridized nanobactericidal films against ESKAPE. These communities are reported to cause severe threats to all forms of lives irrespective to their habitats which can lead to huge economical crisis.

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Держатели документа:
Siberian Fed Univ, Lab Biotechnol New Mat, Svobodnyy Pr 79, Krasnoyarsk 660041, Russia.
SB RAS, Krasnoyarsk Sci Ctr, Fed Res Ctr, Inst Biophys, 50-50 Akademgorodok, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, 79 Svobodny Pr, Krasnoyarsk 660041, Russia.
Siberian Fed Univ, Sch Fundamental Biol & Biotechnol, Krasnoyarsk, Russia.
Krasnoyasrk State Med Univ, Dept Microbiol, Krasnoyarsk Partizana Zheleznyaka St 1, Krasnoyarsk 660022, Russia.
SB RAS, Fed Res Ctr KSC, Kirensky Inst Phys, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Sch Petr & Nat Gas Engn, Krasnoyarsk, Russia.

Доп.точки доступа:
Baker, Syed; Volova, Tatiana; Prudnikova, Svetlana V.; Shumilova, Anna A.; Perianova, Olga, V; Zharkov, S. M.; Жарков, Сергей Михайлович; Kuzmin, A. R.; Kondratenka, Olga; Kiryukhin, Bogdan; Shidlovskiy, Ivan P.; Potkina, Zoya K.; Khohlova, Olga Y.; Lobova, Tatiana I.; Ministry of Education and Science of the Russian Federation under the scheme of 5-100: Russian Academic Excellence Project
}
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BT-30 Ceramic Electrophysical Properties / N. A. Drokin, V. S. Kiiko, A. V. Pavlov, A. I. Malkin // Refract. Ind. Ceram. - 2020. - Vol. 61, Is. 3. - P. 341-348, DOI 10.1007/s11148-020-00484-2. - Cited References: 12 . - ISSN 1083-4877. - ISSN 1573-9139
Кл.слова (ненормированные):
(BeO + TiO2)-ceramic -- electrophysical properties -- electrical resistance activation energy
Аннотация: A total complex resistance (impedance) method is used to study the electrophysical characteristics of (BeO + TiO2)-ceramics modified with TiO2 micro- and nanoparticles in an amount of 30 wt.% (BT-30). Dispersion of the actual ε′ and imaginary ε′′ components of the dielectric permittivity component and specific conductivity in the frequency range from 100 Hz to 100 MHz from room temperature to the boiling point of liquid nitrogen are determined. High values of ε′ and ε′′ in the low-frequency range are typical for structurally inhomogeneous materials due to the accumulation of electric charges at the surface and within microcrystals. Two dielectric relaxation processes associated with electrical conductivity within the body and at the surface of ceramics are detected for the first time. An increase in conductivity with an increase in the microwave field frequency above 1 MHz is explained by the appearance of a current relaxation component. The activation energy of the static resistance of ceramic specimens is determined as a function of the reciprocal temperature that depends little on the weight content of TiO2 nanoparticles and varies in the range of 0.024 – 0.10 eV This also confirms the existence of two independent conduction processes, weakly dependent on the nanoparticle content in the ceramic composition. With placement of ceramic in a high-frequency electric field, spatial charges are formed, the field of which contributes to creation of additional polarization and dielectric losses.

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Держатели документа:
FGBOU VO Academician M. F. Reshetnev Siberian Aerospace University, Krasnoyarsk, Russia.
FGBUN Federal Research Center, Krasnoyarsk Scientific Center of the Siberian Section, Russian Academy of Sciences, Krasnoyarsk, Russia.
FGAOU VO Ural Federal University, Ekaterinburg, Russia.
FGAOU VO Siberian Federal University, Krasnoyarsk, Russia.

Доп.точки доступа:
Drokin, N. A.; Дрокин, Николай Александрович; Kiiko, V. S.; Pavlov, A. V.; Malkin, A. I.
}
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Gavrichkov, V. A.
Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density / V. A. Gavrichkov, S. G. Ovchinnikov // Phys. Solid State. - 1999. - Vol. 41, Is. 1. - P. 59-66, DOI 10.1134/1.1130731. - Cited References: 26 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
QUANTUM TEMPERATURE OSCILLATIONS
   MAGNETIC SEMICONDUCTORS
   HGCR2SE4
   RESISTIVITY
   FILMS
Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].

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Публикация на русском языке Гавричков, Владимир Александрович. Особенности примесного электросопротивления в ферромагнетиках с малой концентрацией носителей [Текст] / В. А. Гавричков, С. Г. Овчинников // Физ. тверд. тела. - С.-Петербург, 1999. - Т. 41 Вып. 1. - С. 68-76

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
}
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Compression of a magnetic flux in the intergrain medium of a YBa2Cu3O7 granular superconductor from magnetic and magnetoresistive measurements / D. A. Balaev [et al.] // J. Appl. Phys. - 2011. - Vol. 110, Is. 9. - Ст. 93918, DOI 10.1063/1.3657775. - Cited References: 21. - We thank V. V. Val'kov and A. D. Balaev for useful discussions of the results and I. Nemtsev for microscopic study of the samples. The study was supported by the Program of the Russian Academy of Sciences No. 5, Project No. 7. . - ISSN 0021-8979

РУБ Physics, Applied
Рубрики:
HIGH-TEMPERATURE SUPERCONDUCTORS
   CRITICAL-CURRENT-DENSITY
   CRITICAL-STATE MODEL
   CRITICAL CURRENTS
   JOSEPHSON MEDIUM
   FIELD
   TRANSITION
Кл.слова (ненормированные):
Effective field -- External fields -- Field dependence -- Field induced -- Granular superconductors -- Inter-grain -- Josephson -- Magnetoresistive -- Space between -- Superconducting grains -- Transport currents -- Electric resistance -- Magnetic flux -- Magnetic moments -- Superconductivity -- Superconducting materials
Аннотация: A method to determine a value of the effective field in the intergrain medium of a granular superconductor is proposed. The space between superconducting grains is considered to be a Josephson medium where passage of the transport current causes dissipation and the effective field is superposition of external field H and the field induced by magnetic moments of superconducting grains. The method proposed is based on the comparison of hysteresis field dependences of magnetoresistance and magnetization and their relaxation at H=const. By the example of granular YBa2Cu3O7, it is shown that, in the region of weak fields, the effective field in the intergrain medium exceeds by far the external field, i.e., compression of a magnetic flux occurs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657775]

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Держатели документа:
[Balaev, D. A.
Popkov, S. I.
Semenov, S. V.
Shaykhutdinov, K. A.
Shabanov, A. V.
Petrov, M. I.] Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
[Balaev, D. A.
Sabitova, E. I.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Sabitova, E. I.; Semenov, S. V.; Семенов, Сергей Васильевич; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Shabanov, A. V.; Шабанов, Александр Васильевич; Petrov, M. I.; Петров, Михаил Иванович
}
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10.

Contributions from Inter-grain Boundaries to the Magneto-resistive Effect in Polycrystalline High-T (C) Superconductors. The Underlying Reason of Different Behavior for YBCO and BSCCO Systems / D. A. Balaev [et al.] // J. Supercond. Nov. Magn. - 2011. - Vol. 24, Is. 7. - P. 2129-2136, DOI 10.1007/s10948-011-1166-9. - Cited References: 30. - This work is supported by program N5 of RAS, project N7. . - ISSN 1557-1939

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
HIGH-TEMPERATURE SUPERCONDUCTORS
   PHASE-SLIP
   TRANSPORT-PROPERTIES
   TRANSITION
   FIELD
   COMPOSITES
   BULK
   TAPES
   YBA2CU3O7-DELTA
   DISSIPATION
Кл.слова (ненормированные):
BSCCO -- YBCO -- Intergrain boundaries -- Magnetoresistance -- BSCCO -- Intergrain boundaries -- Magnetoresistance -- YBCO -- BSCCO -- BSCCO system -- Comparative studies -- High Tc superconductors -- High-field -- Inter-grain -- Irreversibility lines -- Magneto-resistive effect -- Polycrystalline -- Resistive transition -- Standard measurements -- Weak pinning -- YBCO -- Bismuth -- Electric resistance -- Grain boundaries -- High temperature superconductors -- Lead -- Magnetic fields -- Magnetoelectronics -- Magnetoresistance -- Magnetos -- Superconductivity -- Yttrium barium copper oxides -- Semiconductor metal boundaries
Аннотация: In order to clarify the mechanisms in charge of broadening of resistive transition R(T) in magnetic fields of bismuth-based polycrystalline high-T (C) superconductor (HTSC), a comparative study of Bi1.8Pb0.3Sr1.9Ca2Cu3O (x) (BSCCO) and YBa2Cu3O7-delta (YBCO) have been performed. Magnetoresistive effects and irreversibility line obtained from magnetic measurements have been studied. It was established that (1) for YBCO, the smooth part of R(T) dependence unambiguously corresponds to dissipation in the intergrain boundaries for arbitrary magnetic fields; (2) for polycrystalline BSCCO, the smooth part of R(T) dependences correspond to dissipation within intergrain boundary subsystem in the field range H <10(2) Oe only, while standard measurements of R(T) dependences in magnetic field range H > 10(2) Oe reflect the dissipation processes occurring both in intergrain boundary and HTSC grain subsystems; (3) for the high-field range, the contribution from intergrain boundaries of BSCCO can be distinguished from magnetoresistance R(H) dependences obtained at high enough current density on textured samples. It is proposed that various magneto-resistive properties of these classical HTSC systems are due comparatively weak pinning in BSCCO.

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Держатели документа:
[Balaev, D. A.
Popkov, S. I.
Semenov, S. V.
Bykov, A. A.
Dubrovskiy, A. A.
Shaikhutdinov, K. A.
Petrov, M. I.] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Balaev, D. A.
Popkov, S. I.
Sabitova, E. I.
Dubrovskiy, A. A.
Shaikhutdinov, K. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
L.V. Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Semenov, S. V.; Семенов, Сергей Васильевич; Bykov, A. A.; Быков, Алексей Анатольевич; Sabitova, E. I.; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Petrov, M. I.; Петров, Михаил Иванович
}
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11.

Balaev, D. A.
Correlation between magnetoresistance and magnetization hysteresis in a granular high-T C superconductor: Impact of flux compression in the intergrain medium / D. A. Balaev, S. V. Semenov, M. I. Petrov // J. Supercond. Nov. Magn. - 2014. - Vol. 27, Is. 6. - P. 1425-1429, DOI 10.1007/s10948-014-2491-6. - Cited References: 27 . - ISSN 1557-1939. - ISSN 1557-1947

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
HIGH-TEMPERATURE SUPERCONDUCTOR
   JOSEPHSON MEDIUM
   CRITICAL-STATE
   YBA2CU3O7-DELTA
   FIELDS
   BEHAVIOR
   HTSC
   COMPOSITES
   RESISTANCE
   MOTION
Кл.слова (ненормированные):
Granular superconductor -- Josephson medium -- Effective field -- Magnetoresistance -- Magnetization hysteresis
Аннотация: The correlation between experimental magnetic field dependences of magnetoresistance and magnetization hysteresis in granular YBa2Cu3O7 is established. Within the proposed approach, magnetoresistance is assumed to be determined by the effective field in the intergrain boundaries the ensemble of which is considered to be a Josephson medium. The effective field in the intergrain medium can be written in the form B (eff)(H)=H-4 pi M(H)x alpha, where alpha is the parameter of averaged demagnetizing factors of grains and the degree of flux compression. A comparison of experimental magnetoresistance R(H) and magnetization M(H) hysteresis dependences obtained at different external magnetic field sweep rates yields the value alpha similar to 10, which is caused by the flux compression between grains. The proposed model describes well most of the features of the magnetoresistance hysteresis in granular high-T (C) superconductors.

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Доп.точки доступа:
Semenov, S. V.; Семёнов, Сергей Васильевич; Petrov, M. I.; Петров, Михаил Иванович; Балаев, Дмитрий Александрович
}
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12.

Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure / N. V. Volkov [et al.] // J. Phys. D. - 2009. - Vol. 42, Is. 6. - Ст. 65005, DOI 10.1088/0022-3727/42/6/065005. - Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS). . - ISSN 0022-3727

РУБ Physics, Applied

Кл.слова (ненормированные):
Colossal magnetoresistance -- Electric resistance -- Electronic structure -- Magnetic field effects -- Magnetoelectronics -- Manganese -- Manganites -- Oxide minerals -- Schottky barrier diodes -- Semiconductor junctions -- Silicides -- Tunnel junctions -- Tunnels -- Bottom layers -- Channel switching -- Conducting channels -- Conducting layers -- Current-driven -- Current-in-plane geometries -- Depletion layers -- Ferromagnetic state -- Layered structures -- Low-resistance contacts -- Magnetic tunnel junctions -- Magneto-transport properties -- Manganese silicides -- Manganite films -- New mechanisms -- Positive magnetoresistances -- Positive MR -- Potential barriers -- Spin-polarized -- Tunnel structures -- Voltage-current characteristics -- Current voltage characteristics
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.

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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Tsikalov, V. S.
Patrin, G. S.
Kim, P. D.] SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Patrin, G. S.] Siberian Fed Univ, Dept Phys, Krasnoyarsk 660041, Russia
[Seong-Cho, Yu
Kim, Dong-Hyun] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[Chau, Nguyen] Natl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam
ИФ СО РАН
Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036, Russian Federation
Department of Physics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Department of Physics, Chungbuk National University, Cheongju 361-763, South Korea
Center for Materials Science, National University of Hanoi, 334 Nguyen Trai, Hanoi, Viet Nam

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tsikalov, V. S.; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. H.; Chau, N.; RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]
}
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13.

Gokhfeld, D. M.
Description of hysteretic current-voltage characteristics of superconductor-normal metal-superconductor junctions / D. M. Gokhfeld // Supercond. Sci. Technol. - 2007. - Vol. 20, Is. 1. - P. 62-66, DOI 10.1088/0953-2048/20/1/011. - Cited References: 24 . - ISSN 0953-2048

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
HIGH-TEMPERATURE SUPERCONDUCTOR
   WEAK LINKS
   POLYCRYSTALLINE HTSC
   ANDREEV REFLECTION
   SIMPLIFIED MODEL
   COMPOSITES
   TRANSPORT
Кл.слова (ненормированные):
Computational methods -- Current voltage characteristics -- Electric resistance -- Josephson junction devices -- Mathematical models -- Yttrium barium copper oxides -- Andreev reflection -- Metal superconductor junctions -- Metallic Josephson junction -- Weak links -- Semiconductor junctions
Аннотация: A simplified model for the current-voltage characteristics of weak links is suggested. It is based on an approach considering the multiple Andreev reflection in a metallic Josephson junction. The model allows one to calculate the current-voltage characteristics of superconductor-normal metal-superconductor junctions with different thicknesses of normal layer at different temperatures. A hysteretic peculiarity of the V(I) dependence is described as a result of the negative differential resistance. The current-voltage characteristics of tin microbridges and high- T-c composite YBCO + BaPbO3 were computed.

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Держатели документа:
RAS, SD, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
L V Kirensky Institute of Physics, SD RAS, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Гохфельд, Денис Михайлович
}
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14.

    Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device / D. Smolyakov, A. Tarasov, L. Shanidze [et al.] // Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст. 2100459, DOI 10.1002/pssa.202100459. - Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886 . - ISSN 1862-6300. - ISSN 1862-6319
   Перевод заглавия: Влияние магнитного и электрического полей на сопротивление на переменном токе транзисторного устройства на основе кремния на изоляторе

РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
NANOSTRUCTURES
Кл.слова (ненормированные):
impurities states -- magnetoimpedance -- magnetoresistance -- pseudo-MOSFET -- semiconductors -- SOI structure -- transistor
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Pr Svobodny 79, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, Lev; Шанидзе, Лев Викторович; Bondarev, I. A.; Бондарев, Илья Александрович; Baron, F. A.; Барон, Филипп Алексеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
}
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15.

    Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field / V. V. Val'Kov, S. V. Aksenov // J. Exp. Theor. Phys. - 2011. - Vol. 113, Is. 2. - P266-275, DOI 10.1134/S1063776111060070. - Cited Reference Count: 30. - Гранты: This study was carried out under the program of the Physical Science Department of the Russian Academy of Sciences, Federal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia in 2009-2013," Interdisciplinary Integration project no. 53 of the Siberian Branch of the Russian Academy of Sciences, and under partial support from the Russian Foundation for Basic Research (project no. 09-02-00127). The research work of one of the authors (S.V.A) was supported by grant no. MK-1300.2011.2 from the President of the Russian Federation. - Финансирующая организация: Russian Foundation for Basic Research [09-02-00127]; Russian Federation [MK-1300.2011.2] . - AUG. - ISSN 1063-7761
Рубрики:
CONDUCTION
   ANISOTROPY
   JUNCTIONS
Кл.слова (ненормированные):
antiferromagnetic coupling -- colossal magnetoresistance effect -- iv characteristics -- metallic contacts -- potential profiles -- spectral characteristics -- spin dependent transport -- spin dimer -- spin moments -- spin-dependent electron transport -- spin-flip process -- tight-binding approximations -- transmission coefficients -- antiferromagnetism -- colossal magnetoresistance -- current voltage characteristics -- electric resistance -- nanostructures -- transport properties -- magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the electrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Inst Phys, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Reshetnikov Siberian State Aerosp Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Val'kov, V. V.; Вальков, Валерий Владимирович; Aksenov, S.V.
}
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16.

Val'kov, V. V.
Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field / V. V. Val'kov, S. V. Aksenov // J. Exp. Theor. Phys. - 2011. - Vol. 113, Is. 2. - P. 266-275, DOI 10.1134/S1063776111060070. - Cited References: 30. - This study was carried out under the program of the Physical Science Department of the Russian Academy of Sciences, Federal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia in 2009-2013," Interdisciplinary Integration project no. 53 of the Siberian Branch of the Russian Academy of Sciences, and under partial support from the Russian Foundation for Basic Research (project no. 09-02-00127). The research work of one of the authors (S.V.A) was supported by grant no. MK-1300.2011.2 from the President of the Russian Federation. . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
CONDUCTION
ANISOTROPY
JUNCTIONS
Кл.слова (ненормированные):
Antiferromagnetic coupling -- Colossal magnetoresistance effect -- IV characteristics -- Metallic contacts -- Potential profiles -- Spectral characteristics -- Spin dependent transport -- Spin dimer -- Spin moments -- Spin-dependent electron transport -- Spin-flip process -- Tight-binding approximations -- Transmission coefficients -- Antiferromagnetism -- Colossal magnetoresistance -- Current voltage characteristics -- Electric resistance -- Nanostructures -- Transport properties -- Magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the electrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.

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Держатели документа:
[Val'kov, V. V.
Aksenov, S. V.] Russian Acad Sci, Siberian Branch, Inst Phys, Krasnoyarsk 660036, Russia
[Val'kov, V. V.
Aksenov, S. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Val'kov, V. V.] Reshetnikov Siberian State Aerosp Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Reshetnikov Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Вальков, Валерий Владимирович
}
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17.

Electrical properties of thin In2O3/C films / I. V. Babkina, M. N. Volochaev, O. V. Zhilova [et al.] // Inorg. Mater. - 2020. - Vol. 56, Is. 4. - P. 374-381, DOI 10.1134/S0020168520040019. - Cited References: 26. - This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target, project no. 3.1867, 2017/4.6). . - ISSN 0020-1685. - ISSN 1608-3172

РУБ Materials Science, Multidisciplinary
Рубрики:
SEMICONDUCTORS
GAS
Кл.слова (ненормированные):
amorphous and crystalline structures -- electrical resistance -- heat treatment
Аннотация: We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In2O3 granules distributed at random over amorphous carbon. The electrical transport properties of the In2O3/C thin films depend on their thickness. In the temperature range 80-300 K, the dominant electrical transport mechanism in the In2O3/C thin films of thickness h <70 nm sequentially changes from variable range hopping between localized states in a narrow energy band near the Fermi level (between 80 and 120 K) to nearest neighbor hopping (between 120 and 250 K) and then to variable range hopping between localized states in the conduction band tail (between 250 and 300 K). The films of thickness h > 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In2O3 nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient.

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Публикация на русском языке Электрические свойства тонких пленок In2O3/С [Текст] / И. В. Бабкина, М. Н. Волочаев, О. В. Жилова [и др.] // Неорган. матер. - 2020. - Т. 56 № 4. - С. 393-401

Держатели документа:
Voronezh State Tech Univ, Moskovskii Pr 14, Voronezh 394026, Russia.
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk Sci Ctr,Fed Res Ctr, Akademgorodok 50-38, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Babkina, I. V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhilova, O. V.; Kalinin, Yu. E.; Makagonov, V. A.; Pankov, S. Yu.; Sitnikov, A. V.; Russian Federation Ministry of Science and Higher Education [3.1867, 2017/4.6]
}
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18.

Electrical resistance of Sm 0.25Mn0.75S spin glass / S. S. Aplesnin [et al.] // Solid State Phenomena : Selected, peer reviewed papers. - 2012. - Vol. 190: Magnetism and Magnetic Materials V : Selected, Peer Reviewed Papers. - P. 105-108, DOI 10.4028/www.scientific.net/SSP.190.105. - Cited References: 3 . - ISSN 1662-9779. - ISSN 978-30378

РУБ Materials Science, Multidisciplinary + Physics, Multidisciplinary

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Доп.точки доступа:
Perov, N. \ed.\; Rodionova, V. \ed.\; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Kharkov, A. M.; Харьков, Анатолий Михайлович; Eremin, E. V.; Еремин, Евгений Владимирович; Sokolov, V. V.; Соколов В. В.; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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19.

Electrical Resistance of Sm0.25mn0.75s Spin Glass [Text] / S. S. Aplesnin, A. M. Kharkov, E. V. Eremin, V. V. Sokolov // Moscow Int. Symp. on Magnet. (MISM-2011) : Book of abstracts. - 2011. - Ст. 24PO-I2-29. - P. 695-696. - Библиогр.: 2. - This study was supported by the Russian Foundation for Basic Research project № 09-02-00554_а; № 09-02-92001-NNS_a.

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Доп.точки доступа:
Aplesnin, S.S.; Kharkov, A.M.; Eremin, E. V.; Еремин, Евгений Владимирович; Sokolov, V.V.; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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20.

    Korovushkin, M. M.
    Electrical resistivity and the Hall effect in the doped Mott-Hubbard material with strong spin-charge coupling / M. M. Korovushkin // Phys. Scr. - 2023. - Vol. 98, Is. 12. - Ст. 125922, DOI 10.1088/1402-4896/ad05ed. - Cited References: 96. - Author is grateful to V V Val’kov, A D Fedoseev, D M Dzebisashvili and M S Shustin for fruitful discussions and permanent interest in this work. Author thanks V A Mitskan and A O Zlotnikov for technical support . - ISSN 0031-8949. - ISSN 1402-4896
   Перевод заглавия: Электросопротивление и эффект Холла в допированном мотт-хаббардовском материале с сильной спин-зарядовой связью
Кл.слова (ненормированные):
Mott-Hubbard materials -- spin-charge coupling -- spin polarons -- kinetic coefficients -- electrical resistance -- Hall effect
Аннотация: The kinetic characteristics of the doped Mott-Hubbard material are considered within the realistic spin-fermion model which takes into account the strong spin-charge coupling. The kinetic equation constructed on the basis of the mechanism of carrier scattering on the spin fluctuations is solved using the multi-moment method, which allows one to analyze the temperature behavior of nonequilibrium distribution function in the problems of electrical resistivity ρ and the Hall coefficient RH. The calculated dependences ρ(T) and RH(T) for the underdoped and optimally doped regimes demonstrate good qualitative agreement with the experimental data. In particular, the Hall coefficient calculated for the underdoped regime reproduces the experimentally observed sharp drop and even a change in sign at low temperatures.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Коровушкин, Максим Михайлович
}
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