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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lykhin A. O., Novikova G. V., Kuzubov A. A., Staloverova N. A., Sarmatova N. I., Varganov S. A., Krasnov P. O.
Заглавие : A complex of ceftriaxone with Pb(II): synthesis, characterization, and antibacterial activity study
Коллективы : RFBR [14-03-31, 170 MOJI_a]
Место публикации : J. Coord. Chem.: Taylor & Francis, 2014. - Vol. 67, Is. 16. - З2783-2794. - ISSN 0095-8972, DOI 10.1080/00958972.2014.938065. - ISSN 1029-0389
Примечания : Cited References: 48. - The reported study was supported by RFBR, research project No. 14-03-31, 170 MOJI_a and Krasnoyarsk regional fund for supporting scientific and technological activities. We thank the Center for Equipment Joint Use of the Siberian Federal University. We are grateful to the HPC Research Departments of Siberian Federal University and Moscow University Supercomputing Center (SKIF MSU "Chebyshev") for the access to the high-performance computer clusters.
Предметные рубрики: BETA-LACTAM ANTIBIOTICS
TERNARY COMPLEX
METAL-COMPLEXES
BASIS-SETS
3 DECADES
RESISTANCE
COPPER(II)
CEPHALOSPORINS
EVOLUTION
1ST-ROW
Ключевые слова (''Своб.индексиров.''): ceftriaxone lead(ii) complex--dft--ir spectroscopy--tga--antibacterial screening
Аннотация: A Pb(II) complex with ceftriaxone (H2Ceftria) antibiotic was synthesized by reaction of ceftriaxone disodium salt (hemi)heptahydrate with lead nitrate in water–ethanol medium. The complex was characterized on the basis of complexometric titration, spectrophotometric and thermogravimetric analyses, capillary electrophoresis, IR, Raman and UV–vis spectroscopies, and density functional theory calculations. Pb(II) is five-coordinate with distorted square pyramidal geometry. The coordination of Ceftria2− to Pb(II) occurs through N and O of the triazine, lactam carbonyl, carboxylate, and amine groups. The antibacterial activity study showed that Klebsiella pneumoniae is resistant to [Pb(Ceftria)]·3H2O. The antibacterial activity of [Pb(Ceftria)]·3H2O against Staphylococcus aureus is reduced compared with ceftriaxone. In contrast, the antibacterial activity of [Pb(Ceftria)]·3H2O against Escherichia coli is 28% higher than that of ceftriaxone antibiotic.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Sandalov I., Eriksson O.
Заглавие : A perfect spin-filter quantum dot system
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 2004. - Vol. 16, Is. 16. - P.L249-L254. - ISSN 0953-8984, DOI 10.1088/0953-8984/16/16/L03
Примечания : Cited References: 39
Предметные рубрики: NARROW ENERGY BANDS
ELECTRON CORRELATIONS
MAGNETIC-FIELD
MAGNETOTRANSPORT
CONDUCTANCE
RESISTANCE
BARRIER
FORMULA
VALVE
LIMIT
Ключевые слова (''Своб.индексиров.''): electric potential--electron tunneling--magnetic couplings--magnetic fields--magnetic filters--transport properties--electron correlations--magnetic contacts--source-drain voltage--spin projections--semiconductor quantum dots
Аннотация: The discovery of a novel effect in the transport through a QD spin-dependently coupled to magnetic contacts is reported. For a finite range of source-drain voltages the spin projections of the current cancel exactly, resulting in a completely suppressed output current. The spin down current behaves as one normally expects whereas the spin up current becomes negative. As the source-drain voltage is increased the spin up current eventually becomes positive. Thus, tuning the source-drain voltage such that the spin up current vanishes will result in a perfect spin filter.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Gokhfeld D. M., Balaev D. A., Shaihutdinov K. A., Kummel R.
Заглавие : Andreev reflections and experimental current-voltage characteristics of break junctions of polycrystalline HTSC
Место публикации : Physica C: ELSEVIER SCIENCE BV, 2004. - Vol. 408: 7th International Conference on Materials and Mechanisms of Superconductive and High Temperature Superconductors (MAY 25-30, 2003, Rio de Janeiro, BRAZIL). - P620-622. - ISSN 0921-4534, DOI 10.1016/j.physc.2004.03.085
Примечания : Cited References: 3
Ключевые слова (''Своб.индексиров.''): andreev reflections--break junction--current-voltage characteristics--andreev reflections--break junction--current-voltage characteristics--andreev reflections--break junctions--elastic scattering--lattice defects--negative differential resistance--electric fields--heuristic methods--hysteresis--microcracks--polycrystalline materials--probability density function--quasicrystals--superconducting materials--yttrium barium copper oxides--current voltage characteristics
Аннотация: The temperature evolution of current-voltage characteristics (CVCs) of break junctions made from polycrystalline Y0.75Lu0.25Ba2Cu3O7 and La1.85Sr0.15CuO4 is investigated. The experimental CVCs have hysteretic features that reflect a part of a curve with negative differential resistance. The temperature evolution of the CVCs is discussed within the framework of the Kummel-Gunsenheimer-Nicolsky theory for superconductor/normal-metal/superconductor junctions considering multiple Andreev reflections. It is shown that the shape of the CVCs of break junctions is determined by the ratio of the number of "short" and "long" intergrain normal regions in the polycrystalline HTSC under investigation. (C) 2004 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Piskunova N. I.
Заглавие : Anomalies in magnetoresistance and in the bulk modulus for ferromagnetics with four-spin exchange interaction on the Kondo lattice
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 2006. - Vol. 18, Is. 29. - P.6859-6868. - ISSN 0953-8984, DOI 10.1088/0953-8984/18/29/023
Примечания : Cited References: 29
Предметные рубрики: MIXED-VALENCE MANGANITES
PHASE-SEPARATION
LA1-XSRXMNO3
BEHAVIOR
PECULIARITIES
TRANSITION
Ключевые слова (''Своб.индексиров.''): elastic moduli--electric resistance--ferromagnetism--function evaluation--paramagnetism--transceivers--adiabatic approximation--kondo lattice--paramagnetic state--ring exchange--magnetoresistance
Аннотация: The temperature dependence of resistivity and the bulk modulus are calculated on the Kondo lattice, with ring exchange between localized spins, using the spin-polaron and adiabatic approximation. Peak and zero values of the bulk modulus as functions of temperature and concentration are determined below the temperature of the transition to the paramagnetic state. The effects of the nearest order between transverse spin components and a value of the ring exchange between localized spins on magnetoresistivity are estimated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Baker, Syed, Prudnikova, Svetlana V., Shumilova, Anna A., Perianova, Olga V., Zharkov S. M., Kuzmin A.
Заглавие : Bio-functionalization of phytogenic Ag and ZnO nanobactericides onto cellulose films for bactericidal activity against multiple drug resistant pathogens
Место публикации : J. Microbiol. Methods. - 2019. - Vol. 159. - P.42-50. - ISSN 0167-7012, DOI 10.1016/j.mimet.2019.02.009. - ISSN 1872-8359(eISSN)
Примечания : Cited References: 59
Предметные рубрики: SILVER NANOPARTICLES
ANTIMICROBIAL ACTIVITY
SIZE
COMPOSITES
MEMBRANE
Аннотация: The present study describes the synthesis of silver and zinc oxide nanobactericides from the phytogenic source Bupleurum aureum The synthesized nanobactericides were characterized and evaluated for bio-functionalization onto bacterial cellulose membrane which was synthesized by Komagataeibactencylinus B-12068 culture strain. The synthesis of nanobacterides were initially confirmed using UV-Visible spectroscopy which indicated localized surface resonance (LSPR) peaks at 415 nm for silver nanobactericides and 280 nm for zinc nanobactericides. The nature of the capping agent for synthesized nanobactericides was predicted using FTIR which confirmed the presence of functional moieties. XRD analysis revealed their crystalline nature while morphological characteristics were studied using TEM which confirmed the polydispersity of nanobactericides with the average size in the range of 20-25 nm. The nanobactericides were tested for their antimicrobial activity against seven multi-drug resistant pathogens which were clinically isolated from patients suffering from a myriad of microbial infections. The tested pathogens had antimicrobial resistance to ten different antibiotics and have been reported to be the major cause of nosocomial infections. The nanobactericides displayed significant activity against the test pathogens. Silver nanobactericides showed the highest activity against Escherichia coli strain 55 with a 24 mm zone of inhibition while zinc oxide nanobactericides displayed the highest activity against methicillinresistant Staphylococcus aureus (MRSA) with a 20 mm inhibition zone. The bio- functionalized cellulose films (BCF) were characterized using SEM along with physicochemical analysis. The BCF's were evaluated for anti-bacterial activity against test pathogens which resulted in marked antimicrobial potential against multi-drug resistant bacteria and therefore has the potential to be utilized as an efficient alternative to counter drug resistant pathogens.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Baker, Syed, Volova, Tatiana, Prudnikova, Svetlana V., Shumilova, Anna A., Perianova, Olga, V, Zharkov S. M., Kuzmin A. R., Kondratenka, Olga, Kiryukhin, Bogdan, Shidlovskiy, Ivan P., Potkina, Zoya K., Khohlova, Olga Y., Lobova, Tatiana I.
Заглавие : Bio-hybridization of nanobactericides with cellulose films for effective treatment against members of ESKAPE multi-drug-resistant pathogens
Коллективы : Ministry of Education and Science of the Russian Federation under the scheme of 5-100: Russian Academic Excellence Project
Место публикации : Appl. Nanosci. - 2018. - Vol. 8, Is. 5. - P.1101-1110. - ISSN 2190-5509, DOI 10.1007/s13204-018-0717-9. - ISSN 2190-5517(eISSN)
Примечания : Cited References: 51. - Authors are thankful for Ministry of Education and Science of the Russian Federation for providing funding under the scheme of 5-100: Russian Academic Excellence Project. Authors are grateful for facilities provided by Siberian Federal University to carry out the present study.
Предметные рубрики: SILVER NANOPARTICLES
BACTERIAL CELLULOSE
ANTIBIOTIC-RESISTANCE
Ключевые слова (''Своб.индексиров.''): eskape--bio-hybridization--silver nanobactericides--phytogenic--bactericidal activity
Аннотация: The rapid expansion of drug-resistant pathogens has created huge global impact and development of novel antimicrobial leads is one of the top priority studies in the current scenario. The present study aims to develop bio-hybridized nanocellulose films which comprise of phytogenic silver nanobactericides. The nanobactericides were synthesized by treating 1 mM silver nitrate with aqueous extract of Chamerion angustifolium which reduced the metal salt to produce polydispersed nanobactericides which were tested against the members of ESKAPE drug-resistant communities. The synthesized silver nanobactericides were subjected to characterization with UV–visible spectra which displayed maximum absorbance at 408 nm. The bio-molecular interaction of phyto-constituents to mediate synthesis and stabilization of nanobactericides was studied with Fourier-transform infrared spectroscopy (FTIR) which depicted functional groups associated with nanobactericides. The crystalline nature was studied with X-ray diffraction (XRD) which showed Bragg’s intensities at 2θ angle which denoted (111), (200), (220), and (311) planes. The morphological characteristics of silver nanobactericides were defined with transmission electron Microscopy (TEM) image which displayed polydispersity of silver nanobactericides with size ranging from 2 to 40 nm. The synthesized nanobactericides showed a significant activity against MRSA strain with 21 mm zone of inhibition. The minimal inhibitory concentration of silver nanobactericides to inhibit the growth of test pathogens was also determined which ranged between 0.625 and 1.25 μg/ml. The silver nanobactericides were bio-hybridized onto nanocellulose films produced by Komagataeibacter xylinus B-12068 culture strain. The films were dried to determine the mechanical properties which showed increased in Young’s modulus and tensile strength in comparison with control bacterial cellulose films. Overall, the results obtained in the present investigation are promising enough to report bactericidal activity of bio-hybridized nanobactericidal films against ESKAPE. These communities are reported to cause severe threats to all forms of lives irrespective to their habitats which can lead to huge economical crisis.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Drokin N. A., Kiiko V. S., Pavlov A. V., Malkin A. I.
Заглавие : BT-30 Ceramic Electrophysical Properties
Место публикации : Refract. Ind. Ceram. - 2020. - Vol. 61, Is. 3. - P.341-348. - ISSN 1083-4877 (ISSN), DOI 10.1007/s11148-020-00484-2. - ISSN 1573-9139 (eISSN)
Примечания : Cited References: 12
Аннотация: A total complex resistance (impedance) method is used to study the electrophysical characteristics of (BeO + TiO2)-ceramics modified with TiO2 micro- and nanoparticles in an amount of 30 wt.% (BT-30). Dispersion of the actual ε′ and imaginary ε′′ components of the dielectric permittivity component and specific conductivity in the frequency range from 100 Hz to 100 MHz from room temperature to the boiling point of liquid nitrogen are determined. High values of ε′ and ε′′ in the low-frequency range are typical for structurally inhomogeneous materials due to the accumulation of electric charges at the surface and within microcrystals. Two dielectric relaxation processes associated with electrical conductivity within the body and at the surface of ceramics are detected for the first time. An increase in conductivity with an increase in the microwave field frequency above 1 MHz is explained by the appearance of a current relaxation component. The activation energy of the static resistance of ceramic specimens is determined as a function of the reciprocal temperature that depends little on the weight content of TiO2 nanoparticles and varies in the range of 0.024 – 0.10 eV This also confirms the existence of two independent conduction processes, weakly dependent on the nanoparticle content in the ceramic composition. With placement of ceramic in a high-frequency electric field, spatial charges are formed, the field of which contributes to creation of additional polarization and dielectric losses.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density
Место публикации : Phys. Solid State: AMER INST PHYSICS, 1999. - Vol. 41, Is. 1. - P59-66. - ISSN 1063-7834, DOI 10.1134/1.1130731
Примечания : Cited References: 26
Предметные рубрики: QUANTUM TEMPERATURE OSCILLATIONS
MAGNETIC SEMICONDUCTORS
HGCR2SE4
RESISTIVITY
FILMS
Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Popkov S. I., Sabitova E. I., Semenov S. V., Shaykhutdinov K. A., Shabanov A. V., Petrov M. I.
Заглавие : Compression of a magnetic flux in the intergrain medium of a YBa2Cu3O7 granular superconductor from magnetic and magnetoresistive measurements
Разночтения заглавия :авие SCOPUS: Compression of a magnetic flux in the intergrain medium of a YBa 2Cu 3O 7 granular superconductor from magnetic and magnetoresistive measurements
Место публикации : J. Appl. Phys.: AMER INST PHYSICS, 2011. - Vol. 110, Is. 9. - Ст.93918. - ISSN 0021-8979, DOI 10.1063/1.3657775
Примечания : Cited References: 21. - We thank V. V. Val'kov and A. D. Balaev for useful discussions of the results and I. Nemtsev for microscopic study of the samples. The study was supported by the Program of the Russian Academy of Sciences No. 5, Project No. 7.
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTORS
CRITICAL-CURRENT-DENSITY
CRITICAL-STATE MODEL
CRITICAL CURRENTS
JOSEPHSON MEDIUM
FIELD
TRANSITION
Ключевые слова (''Своб.индексиров.''): effective field--external fields--field dependence--field induced--granular superconductors--inter-grain--josephson--magnetoresistive--space between--superconducting grains--transport currents--electric resistance--magnetic flux--magnetic moments--superconductivity--superconducting materials
Аннотация: A method to determine a value of the effective field in the intergrain medium of a granular superconductor is proposed. The space between superconducting grains is considered to be a Josephson medium where passage of the transport current causes dissipation and the effective field is superposition of external field H and the field induced by magnetic moments of superconducting grains. The method proposed is based on the comparison of hysteresis field dependences of magnetoresistance and magnetization and their relaxation at H=const. By the example of granular YBa2Cu3O7, it is shown that, in the region of weak fields, the effective field in the intergrain medium exceeds by far the external field, i.e., compression of a magnetic flux occurs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657775]
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Popkov S. I., Semenov S. V., Bykov A. A., Sabitova E. I., Dubrovskiy A. A., Shaikhutdinov K. A., Petrov M. I.
Заглавие : Contributions from Inter-grain Boundaries to the Magneto-resistive Effect in Polycrystalline High-T (C) Superconductors. The Underlying Reason of Different Behavior for YBCO and BSCCO Systems
Разночтения заглавия :авие SCOPUS: Contributions from inter-grain boundaries to the magneto-resistive effect in polycrystalline high-TC superconductors. the underlying reason of different behavior for YBCO and BSCCO systems
Место публикации : J. Supercond. Nov. Magn: SPRINGER, 2011. - Vol. 24, Is. 7. - P2129-2136. - ISSN 1557-1939, DOI 10.1007/s10948-011-1166-9
Примечания : Cited References: 30. - This work is supported by program N5 of RAS, project N7.
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTORS
PHASE-SLIP
TRANSPORT-PROPERTIES
TRANSITION
FIELD
COMPOSITES
BULK
TAPES
YBA2CU3O7-DELTA
DISSIPATION
Ключевые слова (''Своб.индексиров.''): bscco--ybco--intergrain boundaries--magnetoresistance--bscco--intergrain boundaries--magnetoresistance--ybco--bscco--bscco system--comparative studies--high tc superconductors--high-field--inter-grain--irreversibility lines--magneto-resistive effect--polycrystalline--resistive transition--standard measurements--weak pinning--ybco--bismuth--electric resistance--grain boundaries--high temperature superconductors--lead--magnetic fields--magnetoelectronics--magnetoresistance--magnetos--superconductivity--yttrium barium copper oxides--semiconductor metal boundaries
Аннотация: In order to clarify the mechanisms in charge of broadening of resistive transition R(T) in magnetic fields of bismuth-based polycrystalline high-T (C) superconductor (HTSC), a comparative study of Bi1.8Pb0.3Sr1.9Ca2Cu3O (x) (BSCCO) and YBa2Cu3O7-delta (YBCO) have been performed. Magnetoresistive effects and irreversibility line obtained from magnetic measurements have been studied. It was established that (1) for YBCO, the smooth part of R(T) dependence unambiguously corresponds to dissipation in the intergrain boundaries for arbitrary magnetic fields; (2) for polycrystalline BSCCO, the smooth part of R(T) dependences correspond to dissipation within intergrain boundary subsystem in the field range H 10(2) Oe only, while standard measurements of R(T) dependences in magnetic field range H 10(2) Oe reflect the dissipation processes occurring both in intergrain boundary and HTSC grain subsystems; (3) for the high-field range, the contribution from intergrain boundaries of BSCCO can be distinguished from magnetoresistance R(H) dependences obtained at high enough current density on textured samples. It is proposed that various magneto-resistive properties of these classical HTSC systems are due comparatively weak pinning in BSCCO.
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Semenov S. V., Petrov M. I.
Заглавие : Correlation between magnetoresistance and magnetization hysteresis in a granular high-T C superconductor: Impact of flux compression in the intergrain medium
Место публикации : J. Supercond. Nov. Magn.: Springer, 2014. - Vol. 27, Is. 6. - P.1425-1429. - ISSN 1557-1939, DOI 10.1007/s10948-014-2491-6. - ISSN 1557-1947
Примечания : Cited References: 27
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTOR
JOSEPHSON MEDIUM
CRITICAL-STATE
YBA2CU3O7-DELTA
FIELDS
BEHAVIOR
HTSC
COMPOSITES
RESISTANCE
MOTION
Ключевые слова (''Своб.индексиров.''): granular superconductor--josephson medium--effective field--magnetoresistance--magnetization hysteresis
Аннотация: The correlation between experimental magnetic field dependences of magnetoresistance and magnetization hysteresis in granular YBa2Cu3O7 is established. Within the proposed approach, magnetoresistance is assumed to be determined by the effective field in the intergrain boundaries the ensemble of which is considered to be a Josephson medium. The effective field in the intergrain medium can be written in the form B (eff)(H)=H-4 pi M(H)x alpha, where alpha is the parameter of averaged demagnetizing factors of grains and the degree of flux compression. A comparison of experimental magnetoresistance R(H) and magnetization M(H) hysteresis dependences obtained at different external magnetic field sweep rates yields the value alpha similar to 10, which is caused by the flux compression between grains. The proposed model describes well most of the features of the magnetoresistance hysteresis in granular high-T (C) superconductors.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tsikalov V. S., Patrin G. S., Kim P. D., Seong-Cho Y., Kim D. H., Chau N.
Заглавие : Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure
Коллективы : RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]
Место публикации : J. Phys. D. - 2009. - Vol. 42, Is. 6. - Ст.65005. - ISSN 0022-3727, DOI 10.1088/0022-3727/42/6/065005
Примечания : Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS).
Ключевые слова (''Своб.индексиров.''): colossal magnetoresistance--electric resistance--electronic structure--magnetic field effects--magnetoelectronics--manganese--manganites--oxide minerals--schottky barrier diodes--semiconductor junctions--silicides--tunnel junctions--tunnels--bottom layers--channel switching--conducting channels--conducting layers--current-driven--current-in-plane geometries--depletion layers--ferromagnetic state--layered structures--low-resistance contacts--magnetic tunnel junctions--magneto-transport properties--manganese silicides--manganite films--new mechanisms--positive magnetoresistances--positive mr--potential barriers--spin-polarized--tunnel structures--voltage-current characteristics--current voltage characteristics
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gokhfeld D. M.
Заглавие : Description of hysteretic current-voltage characteristics of superconductor-normal metal-superconductor junctions
Место публикации : Supercond. Sci. Technol.: IOP PUBLISHING LTD, 2007. - Vol. 20, Is. 1. - P62-66. - ISSN 0953-2048, DOI 10.1088/0953-2048/20/1/011
Примечания : Cited References: 24
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTOR
WEAK LINKS
POLYCRYSTALLINE HTSC
ANDREEV REFLECTION
SIMPLIFIED MODEL
COMPOSITES
TRANSPORT
Ключевые слова (''Своб.индексиров.''): computational methods--current voltage characteristics--electric resistance--josephson junction devices--mathematical models--yttrium barium copper oxides--andreev reflection--metal superconductor junctions--metallic josephson junction--weak links--semiconductor junctions
Аннотация: A simplified model for the current-voltage characteristics of weak links is suggested. It is based on an approach considering the multiple Andreev reflection in a metallic Josephson junction. The model allows one to calculate the current-voltage characteristics of superconductor-normal metal-superconductor junctions with different thicknesses of normal layer at different temperatures. A hysteretic peculiarity of the V(I) dependence is described as a result of the negative differential resistance. The current-voltage characteristics of tin microbridges and high- T-c composite YBCO + BaPbO3 were computed.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Shanidze, Lev, Bondarev I. A., Baron F. A., Lukyanenko A. V., Yakovlev I. A., Volochaev M. N., Volkov N. V.
Заглавие : Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
Место публикации : Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст.2100459. - ISSN 1862-6300, DOI 10.1002/pssa.202100459. - ISSN 1862-6319(eISSN)
Примечания : Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886
Предметные рубрики: NANOSTRUCTURES
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S.V.
Заглавие : Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field
Место публикации : J. Exp. Theor. Phys. - NEW YORK: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 113, Is. 2. - С. 266-275. - AUG. - ISSN 1063-7761, DOI 10.1134/S1063776111060070
Примечания : Cited Reference Count: 30. - Гранты: This study was carried out under the program of the Physical Science Department of the Russian Academy of Sciences, Federal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia in 2009-2013," Interdisciplinary Integration project no. 53 of the Siberian Branch of the Russian Academy of Sciences, and under partial support from the Russian Foundation for Basic Research (project no. 09-02-00127). The research work of one of the authors (S.V.A) was supported by grant no. MK-1300.2011.2 from the President of the Russian Federation.Финансирующая организация: Russian Foundation for Basic Research [09-02-00127]; Russian Federation [MK-1300.2011.2]
Предметные рубрики: CONDUCTION
ANISOTROPY
JUNCTIONS
Ключевые слова (''Своб.индексиров.''): antiferromagnetic coupling--colossal magnetoresistance effect--iv characteristics--metallic contacts--potential profiles--spectral characteristics--spin dependent transport--spin dimer--spin moments--spin-dependent electron transport--spin-flip process--tight-binding approximations--transmission coefficients--antiferromagnetism--colossal magnetoresistance--current voltage characteristics--electric resistance--nanostructures--transport properties--magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the electrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V.
Заглавие : Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 113, Is. 2. - P266-275. - ISSN 1063-7761, DOI 10.1134/S1063776111060070
Примечания : Cited References: 30. - This study was carried out under the program of the Physical Science Department of the Russian Academy of Sciences, Federal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia in 2009-2013," Interdisciplinary Integration project no. 53 of the Siberian Branch of the Russian Academy of Sciences, and under partial support from the Russian Foundation for Basic Research (project no. 09-02-00127). The research work of one of the authors (S.V.A) was supported by grant no. MK-1300.2011.2 from the President of the Russian Federation.
Предметные рубрики: CONDUCTION
ANISOTROPY
JUNCTIONS
Ключевые слова (''Своб.индексиров.''): antiferromagnetic coupling--colossal magnetoresistance effect--iv characteristics--metallic contacts--potential profiles--spectral characteristics--spin dependent transport--spin dimer--spin moments--spin-dependent electron transport--spin-flip process--tight-binding approximations--transmission coefficients--antiferromagnetism--colossal magnetoresistance--current voltage characteristics--electric resistance--nanostructures--transport properties--magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the electrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Babkina I. V., Volochaev M. N., Zhilova O. V., Kalinin, Yu. E., Makagonov V. A., Pankov, S. Yu., Sitnikov A. V.
Заглавие : Electrical properties of thin In2O3/C films
Коллективы : Russian Federation Ministry of Science and Higher Education [3.1867, 2017/4.6]
Место публикации : Inorg. Mater. - 2020. - Vol. 56, Is. 4. - P.374-381. - ISSN 0020-1685, DOI 10.1134/S0020168520040019. - ISSN 1608-3172(eISSN)
Примечания : Cited References: 26. - This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target, project no. 3.1867, 2017/4.6).
Предметные рубрики: SEMICONDUCTORS
GAS
Аннотация: We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In2O3 granules distributed at random over amorphous carbon. The electrical transport properties of the In2O3/C thin films depend on their thickness. In the temperature range 80-300 K, the dominant electrical transport mechanism in the In2O3/C thin films of thickness h 70 nm sequentially changes from variable range hopping between localized states in a narrow energy band near the Fermi level (between 80 and 120 K) to nearest neighbor hopping (between 120 and 250 K) and then to variable range hopping between localized states in the conduction band tail (between 250 and 300 K). The films of thickness h 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In2O3 nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Kharkov A. M., Eremin E. V., Sokolov V. V.
Заглавие : Electrical resistance of Sm 0.25Mn0.75S spin glass
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenomena: Selected, peer reviewed papers/ ed.: N. Perov, P. Rodionova. - Stafa-Zurich: Trans Tech Publications, 2012. - Vol. 190: Magnetism and Magnetic Materials V : Selected, Peer Reviewed Papers. - P.105-108. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.190.105. - ISSN 978-303785436-5
Примечания : Cited References: 3
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19.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Aplesnin S.S., Kharkov A.M., Eremin E. V., Sokolov V.V.
Заглавие : Electrical Resistance of Sm0.25mn0.75s Spin Glass
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2011): Book of abstracts. - 2011. - Ст.24PO-I2-29. - P.695-696
Примечания : Библиогр.: 2. - This study was supported by the Russian Foundation for Basic Research project № 09-02-00554_а; № 09-02-92001-NNS_a.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Korovushkin M. M.
Заглавие : Electrical resistivity and the Hall effect in the doped Mott-Hubbard material with strong spin-charge coupling
Колич.характеристики :14 с
Место публикации : Phys. Scr. - 2023. - Vol. 98, Is. 12. - Ст.125922. - ISSN 00318949 (ISSN), DOI 10.1088/1402-4896/ad05ed. - ISSN 14024896 (eISSN)
Примечания : Cited References: 96. - Author is grateful to V V Val’kov, A D Fedoseev, D M Dzebisashvili and M S Shustin for fruitful discussions and permanent interest in this work. Author thanks V A Mitskan and A O Zlotnikov for technical support
Аннотация: The kinetic characteristics of the doped Mott-Hubbard material are considered within the realistic spin-fermion model which takes into account the strong spin-charge coupling. The kinetic equation constructed on the basis of the mechanism of carrier scattering on the spin fluctuations is solved using the multi-moment method, which allows one to analyze the temperature behavior of nonequilibrium distribution function in the problems of electrical resistivity ρ and the Hall coefficient RH. The calculated dependences ρ(T) and RH(T) for the underdoped and optimally doped regimes demonstrate good qualitative agreement with the experimental data. In particular, the Hall coefficient calculated for the underdoped regime reproduces the experimentally observed sharp drop and even a change in sign at low temperatures.
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