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    Lasers and applications [proceedings]. Vol. II. Biology, medicine, surface science / Acad. of sci., USSR, Sib. Branch, L.V. Kirensky Inst. of phys. Int. school of lasers and applicat. ; ed.: A. K. Popov, V. G. Arkhipkin, V. V. Slabko ; presid. K. S. Aleksandrov. - Krasnoyarsk : [б. и.], 1991. - 234 с. - Refs. at the and of the paps. - 200 экз. - Б. ц.
Перевод заглавия: Лазеры и приложения. Международная школа по лазерам : сб.
   Перевод заглавия: Лазеры и приложения. Международная школа по лазерам : сб.

Держатели документа:
Kirensky Institute of Physics

Доп.точки доступа:
Popov, A. K. \ed.\; Попов, Александр Кузьмич; Aleksandrov, K. S. \presid.\; Александров, Кирилл Сергеевич; Arkhipkin, V. G. \ed.\; Архипкин, Василий Григорьевич; Slabko, V. V. \ed.\; Слабко, Виталий Васильевич; International school of lasers and applications (March 17-23,1989 ; Sayanogorsk)
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Lifshitz quantum phase transitions and Fermi surface transformation with hole doping in high-Tc superconductors / S. G. Ovchinnikov, M. M. Korshunov, E. Shneyder // arXiv. - 2009. - Ст. arXiv:0909.2308

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Держатели документа:
Max-Planck-Institut f¨ur Physik komplexer Systeme, D-01187 Dresden, Germany
Department of Physics, University of Florida, Gainesville, Florida 32611, USA
L.V. Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, 660036 Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, 660041, Russia
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russia

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Korshunov, M. M.; Коршунов, Максим Михайлович; Shneyder, E. I.; Шнейдер, Елена Игоревна
}
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    International workshop on actual problems of condensed matter physics : Program. Book of abstracts / Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. ; предс. прогр. ком. S. G. Ovchinnikov. - Krasnoyarsk : [s. n.], 2017. - 30 p.
    Содержание:
Bondarev, I. A. Magnetic and transport properties of the epitaxial Fe3Si film on a Si substrate / I. A. Bondarev. - P .25
Yakovlev, I. A. The magnetic anisotropy of the Fe and Fe(1-x)Si(x) thin films depend on / I. A. Yakovlev [и др.]. - P .12
Другие авторы: Belyaev B. A., Rautskii M. V., Tarasov, I. A., Varnakov S. N, Ovchinnikov, S. G.
Popkov, S. I. Inverted opals as the Josephson networks of weak links : Invited / S. I. Popkov [и др.]. - P .24
Другие авторы: Gokhfeld D. M., Bykov A., Mistonov A., Shabanov A., Terentiev K.
Nikolaev, S. Electronic structure and Fermi surface within the cluster perturbation theory in X-operators representation : Invited / S. Nikolaev, V. I. Kuz'min, S. G. Ovchinnikov. - P .27
Fedorov, A. S. DFT investigation of electronic and optical magnetic properties of one dimensional transition metal halide structuresTmHaI3 : Invited / A. S. Fedorov [и др.]. - P .20
Другие авторы: Kuzubov A. A., Kovaleva E. A., Popova M. I., Kholtobina A. S., Mikhaleva N. S., Visotin M. A.
Ovchinnikov, S. G. Effect of interatomic exchange interaction on spin crossover and Mott-Hubbard transition under high pressure and the physical properties of the low Earth’s mantle : Invited / S. G. Ovchinnikov [и др.]. - P .26
Другие авторы: Orlov Yu. S., Nikolaev S., Nesterov A., Ovchinnikova T.
Tarasov, I. A. Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure / I. A. Tarasov [и др.]. - P .21
Другие авторы: Smolyakov D. A., Rautskii M. V., Lukyanenko A. V., Yakovlev I. A., Ovchinnikov S. G., Volkov N. V.
Volkov, N. V. Marnetic-field sensitivity of charge transport in silicon-based hybrid structures : Invited / N. V. Volkov [et al.]. - P .10
Другие авторы: Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Bondarev I. A., Ovchinnikov S. G.
Lukyanenko, A. V. Fabrication of multi-terminal planar devices based on epitaxial Fe1-xSix films grown on Si(111) / A. V. Lukyanenko, A. S. Tarasov, I. A. Tarasov [et al.] ; A. V. Luyanenko [и др.]. - P .28
Другие авторы: Tarasov A. S., Tarasov I. A., Bondarev I. A., Smolyarova T. E., Yakovlev I. A., Volochaev M. N., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Rautskii, M. V. Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hibrid structure with the Scottky barrier / M. V. Rautskii [и др.]. - P .29
Другие авторы: Tarasov A. S., Varnakov S. N., Bondarev I. A., Volochaev M. N., Lukyanenko A. V., Volkov N. V.
Moryachkov, R. Small angle X-ray scattering and atomic structure of aptamer biomolecules / R. Moryachkov [и др.]. - P .14-15
Другие авторы: Tomilin F. N., Shchugoreva I., Spiridonova V., Peters G., Zabluda V.
Tarasov, I. A. Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties : Invited / I. A. Tarasov [и др.]. - P .23
Другие авторы: Visotin M. A., Solovyov L. A., Rautskii M. V., Zhandun, V. S., Nemtsev I. V., Yakovlev I. A., Varnakov S. N, Ovchinnikov, S. G.
Sokolov, A. E. Magnetic nanoparticles and DNA-aptamers conjugates for diagnostics and therapy of cancer : Invited / A. E. Sokolov [и др.]. - P .13
Другие авторы: Zamay S., Zamay T., Svetlichnyi V., Velikanov D.
Sandalov, I. S. The microscopic origin of ferromagnetism in Fe silicides : Invited / I. S. Sandalov [и др.]. - P .16
Другие авторы: Zamkova N. G., Zhandun V. S., Ovchinnikov, S. G.

Материалы конференции
Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Ovchinnikov, S. G. \предс. прогр. ком.\; Овчинников, Сергей Геннадьевич; Lukyanenko, A. V.; Varnakov, S. N.; Bondarev, I. A.; Ovchinnikov, S. G.; Tarasov, I. A.; Svetlichnyi, V.; Velikanov, D. A.; Spiridonova, V.; Peters, G.; Zabluda, V. N.; Popova, M. I.; Kholtobina, A. S.; Mikhaleva, N. S.; Visotin, M. A.; Yakovlev, I. A.; Volkov, N. V.; Rautskii, M. V.; Zhandun, V. S.; Nemtsev, I. V.; Varnakov, S. N; Mistonov, A.; Shabanov, A. V.; Terentiev, K. Yu.; Nesterov, A.; Ovchinnikova, T.; Smolyarova, T. E.; Volochaev, M. N.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Siberian Federal Univercity; International Workshop on Actual Problems of Condensed Matter Physics (27 Mar. - 1 Apr. 2017 ; Krasnoyarsk / Cheremushki)
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Mode coupling in arrays of Al nanoparticles / A. E. Ershov, V. S. Gerasimov, R. G. Bikbaev [et al.] // J. Quant. Spectrosc. Radiat. Transf. - 2020. - Vol. 248. - Ст. 106961, DOI 10.1016/j.jqsrt.2020.106961. - Cited References: 81. - The reported study was funded by the grant of the President of Russian Federation (agreement 075-15-2019-676 ); the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science (Grant No.18-42-240013); the State contract with Siberian Federal University for scientific research; Russian Science Foundation project number 19-72-00066 (investigation of finite size effects) . - ISSN 0022-4073
Кл.слова (ненормированные):
Plasmonics -- Aluminum -- Surface lattice resonances
Аннотация: The mechanisms of coupling between the lattice modes of a two-dimensional (2D) array consisting of Al nanoparticles and the localized modes of individual Al nanoparticles have been studied in detail. The results were obtained employing the finite-difference time-domain method (FDTD) and the generalized Mie theory. It was shown that interactions of single particles with 2D lattice modes significantly change the extinction spectra depending on the particle radius and the lattice period. The Rayleigh anomalies of higher orders contribute to formation of hybrid modes resulting in increase of the extinction efficiency in short wavelength range of the spectrum. It was shown that high intensity magnetic modes are excited in aluminum nanoparticles arrays. The patterns of spatial electromagnetic field distribution at the frequencies of hybrid modes have been studied. We note that comprehensive understanding the mode coupling mechanisms in arrays paves the way for engineering different types of modern photonic devices with controllable optical properties.

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Держатели документа:
Institute of Computational Modeling SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
L.V. Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation

Доп.точки доступа:
Ershov, A. E.; Gerasimov, V. S.; Bikbaev, R. G.; Бикбаев, Рашид Гельмединович; Polyutov, S. P.; Karpov, S. V.; Карпов, Сергей Васильевич
}
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    Ferromagnetic resonance study of biogenic ferrihydrite nanoparticles: spin-glass state of surface spins / S. V. Stolyar, D. A. Balaev, V. P. Ladygina [et al.] // JETP Letters. - 2020. - Vol. 111, Is. 3. - P. 183-187, DOI 10.1134/S0021364020030145. - Cited References: 41. - This work was supported by the Russian Foundation for Basic Research, project no. 18-02-40137.This work was supported by the Russian Foundation for Basic Research, by the Government of Krasnoyarsk krai, by the Krasnoyarsk Regional Fund for the Support of Scientific and Technical Activities (project no. 19-42-240012 r_a “Magnetic Resonance in Ferrihydrite Nanoparticles: Effects Associated with the Core-Shell Structure”), and by the Council of the President of the Russian Federation for State Support of Young Scientists and Leading Scientific Schools (project no. MK-1263.2020.3). . - ISSN 0021-3640. - ISSN 1090-6487
Рубрики:
MAGNETIC-PROPERTIES
   NIO NANOPARTICLES
   TRANSITION
   ANISOTROPY
Аннотация: Ferrihydrite nanoparticles (2–3 nm in size), which are products of the vital activity of microorganisms, are studied by the ferromagnetic resonance method. The “core” of ferrihydrite particles is ordered antiferromagnetically, and the presence of defects leads to the appearance of an uncompensated magnetic moment in nanoparticles and the characteristic superparamagnetic behavior. It is established from the ferromagnetic resonance data that the field dependence of the frequency is described by the expression 2πν/γ = HR + H A(T=0) (1 − T/T*), where γ is the gyromagnetic ratio, HR is the resonance field, HA ≈ 7 kOe, and T* ≈ 50 K. The induced anisotropy HA is due to the spin-glass state of the near-surface regions.

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Публикация на русском языке Исследование наночастиц биогенного ферригидрита методом ферромагнитного резонанса: спин-стекольное состояние поверхностных спинов [Текст] / С. В. Столяр, Д. А. Балаев, В. П. Ладыгина [и др.] // Письма в ЖЭТФ. - 2020. - Т. 111 Вып. 3. - С. 197-202

Держатели документа:
Russian Acad Sci, Fed Res Ctr KSC, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Russian Acad Sci, Fed Res Ctr KSC, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Stolyar, S. V.; Столяр, Сергей Викторович; Balaev, D. A.; Балаев, Дмитрий Александрович; Ladygina, V. P.; Pankrats, A. I.; Панкрац, Анатолий Иванович; Yaroslavtsev, R. N.; Ярославцев, Роман Николаевич; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Iskhakov, R. S.; Исхаков, Рауф Садыкович
}
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Altunin, R. R.
Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction / R. R. Altunin, E. T. Moiseenko, S. M. Zharkov // Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P. 708-713, DOI 10.1134/S1063783420040034. - Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
LIGHT-EMITTING-DIODES
   PHASE-FORMATION
   AG
   AL
   DIFFUSION
   SUPPRESSION
   INTERFACE
   SURFACE
   GROWTH
   HEAT
Кл.слова (ненормированные):
thin films -- phase formation -- Al/Ag -- solid-state reaction; -- electron diffraction -- resistivity
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.

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Публикация на русском языке Алтунин Р. Р. Влияние структурных свойств на электросопротивление тонких пленок Al/Ag в процессе твердофазной реакции [Текст] / Р. Р. Алтунин, Е. Т. Моисеенко, С. М. Жарков // Физ. тверд. тела. - 2020. - Т. 62 Вып. 4. - С. 621-626

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Moiseenko, E. T.; Zharkov, S. M.; Жарков, Сергей Михайлович; Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
}
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Gardymova, Anna P..
Optical textures and orientational structures in cholesteric droplets with conical boundary conditions / A. P. Gardymova, M. N. Krakhalev, V. Y. Zyryanov // Molecules. - 2020. - Vol. 25, Is. 7. - Ст. 1740, DOI 10.3390/molecules25071740. - Cited References: 53. - The authors are grateful for the financial support by the Russian Science Foundation (grant No. 18-72-10036). . - ISSN 1420-3049

РУБ Biochemistry & Molecular Biology + Chemistry, Multidisciplinary
Рубрики:
DISPERSED LIQUID-CRYSTALS
CHIRAL NEMATIC DROPLETS
IONIC MODIFICATION
Кл.слова (ненормированные):
cholesteric liquid crystal -- droplet -- optical texture -- orientational structure -- conical surface anchoring -- topological defect
Аннотация: Cholesteric droplets dispersed in polymer with conical boundary conditions have been studied. The director configurations are identified by the polarising microscopy technique. The axisymmetric twisted axial-bipolar configuration with the surface circular defect at the droplet’s equator is formed at the relative chirality parameter N0≤2.9 . The intermediate director configuration with the deformed circular defect is realised at 2.9
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Держатели документа:
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Krakhalev, M. N.; Крахалев, Михаил Николаевич; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Russian Science FoundationRussian Science Foundation (RSF) [18-72-10036]
}
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Light interference in a hybrid-aligned nematic layer with nonordered surface disclination lines / A. M. Parshin, A. V. Barannik, V. Y. Zyryanov, V. F. Shabanov // J. Opt. Soc. Am. B. - 2020. - Vol. 37, Is. 7. - P. 2053-2057, DOI 10.1364/JOSAB.395976. - Cited References: 19 . - ISSN 0740-3224. - ISSN 1520-8540

РУБ Optics
Рубрики:
LIQUID-CRYSTAL
   SCATTERING
   DEFECTS
   DOMAINS
Аннотация: The propagation of a laser beam through a hybrid-aligned nematic layer with a surface disclination line has been investigated. A model of the light interference has been developed to consider the scattering by the structural inhomogeneities. The analytical expression that includes the factor characterizing an exponential decrease in the light scattering has been obtained. The dependence of the intensity of light transmitted through the layer on the magnetic field has been measured. The dependence has been accompanied by the interference oscillations. The theoretical expression is consistent with the experiment, which confirms the correctness of the model concepts.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Parshin, A. M.; Паршин, Александр Михайлович; Barannik, A. V.; Баранник, Алексей Владимирович; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Shabanov, V. F.; Шабанов, Василий Филиппович
}
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Tarasov, I. A.
α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces / I. A. Tarasov, I. A. Bondarev, A. I. Romanenko // J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P. 851-861, DOI 10.1134/S1027451020040357. - Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Кл.слова (ненормированные):
iron silicide -- interface structure -- orientation relationship -- near coincidence site lattice -- edge-to-edge matching -- plane-to-plane matching
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.

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Держатели документа:
RAS, Kirensky Inst Phys, Fed Res Ctr, KSC,SB, Krasnoyarsk 660036, Russia.
RAS, Nikolaev Inst Inorgan Chem, SB, Novosibirsk 630090, Russia.

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Romanenko, A. I.; Тарасов, Иван Анатольевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
}
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10.

Reversal of uniaxial magnetic anisotropy in Fe/GaAs (110) films driven by surface relaxation: An in situ ferromagnetic resonance study / B. Bhagat, A. Semisalova, R. Meckenstock, M. Farle // AIP Adv. - 2020. - Vol. 10, Is. 7. - Ст. 075219, DOI 10.1063/5.0004261. - Cited References: 32. - This work was supported by Deutsche Forschungsgemeinschaft (DFG, German Research Foundation): Project Nos. RO 5030/2-1 and 405553726-TRR 270, and by the Government of the Russian Federation (Research Grant No. 075-15-2019-1886). The authors acknowledge Florian Romer for initial funding and training and are thankful to Benjamin Zingsem for helping in data fitting and to Ulf Wiedwald for AFM measurements. . - ISSN 2158-3226

РУБ Nanoscience & Nanotechnology + Materials Science, Multidisciplinary
Рубрики:
EPITAXIAL FE FILMS
   GAAS(001)
   GAAS
   RECONSTRUCTION
   LAYERS
Аннотация: We report an in situ study of the time evolution of magnetic anisotropy constants of an uncapped 4 nm [~ 27 monolayers (ML)] Fe film epitaxially grown on a GaAs (110) substrate at room temperature under ultra-high vacuum (UHV) conditions. The structural and chemical properties are monitored by low energy electron diffraction and Auger spectroscopy with a sensitivity of 0.01 ML. The in situ UHV ferromagnetic resonance (FMR) study over a period of 6 days in 10-9 Pa reveals that there is a slow magneto-morphological transition of the Fe film surface at room temperature. The resonance field measured in situ in the [110] direction initially changes at a rate of 0.3 mT/h within 30 h after deposition and later at 0.1 mT/h over 80 h. We determine the time-dependent changes in the in-plane and out-of-plane anisotropy constants and find a sign change in the uniaxial in-plane anisotropy in the first 24 h due to morphological changes at the surface. The in situ FMR measurements and the Auger analysis allow us to exclude changes in the magnetization and anisotropy due to the contamination and oxidation of the Fe film.

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Держатели документа:
Univ Duisburg Esssen, Ctr Nanointegrat, D-47057 Duisburg, Germany.
Univ Duisburg Esssen, Fac Phys, D-47057 Duisburg, Germany.
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Bhagat, Babli; Semisalova, Anna; Meckenstock, Ralf; Farle, M.; Фарле, Михаель; Deutsche Forschungsgemeinschaft (DFG, German Research Foundation)German Research Foundation (DFG) [RO 5030/2-1, 405553726-TRR 270]; Government of the Russian Federation [075-15-2019-1886]
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