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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : ZHIGALOV V. S., Vershinina L. I., FROLOV G. I.
Заглавие : MAGNETIC AND SEMICONDUCTOR PROPERTIES OF IRON NITRIDE FILMS
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1984. - Vol. 26, Is. 6. - P1887-1889. - ISSN 0367-3294
Примечания : Cited References: 4
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gluck M., Kolovsky A. R., Korsch H. J., Zimmer F.
Заглавие : Wannier-Stark resonances in semiconductor superlattices
Место публикации : Phys. Rev. B: AMERICAN PHYSICAL SOC, 2002. - Vol. 65, Is. 11. - Ст.115302. - ISSN 1098-0121, DOI 10.1103/PhysRevB.65.115302
Примечания : Cited References: 22
Предметные рубрики: ELECTRIC-FIELD
STATES
LADDERS
BREAKDOWN
BLOCH
LOCALIZATION
Аннотация: Wannier-Stark states for semiconductor superlattices in strong static fields, where the interband Landau-Zener tunneling cannot be neglected, are rigorously calculated. The lifetime of these metastable states was found to show multiscale oscillations as a function of the static field, which is explained by an interaction with above-barrier resonances. An equation, expressing the absorption spectrum of semiconductor superlattices in terms of the resonance Wannier-Stark states, is obtained and used to calculate the absorption spectrum in the region of high static fields.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vetrov S.Ya., Avdeeva A. Y., Timofeev I. V.
Заглавие : Spectral properties of a one-dimensional photonic crystal with a resonant defect nanocomposite layer
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 113, Is. 5. - P.755-761. - ISSN 1063-7761, DOI 10.1134/S1063776111140093
Примечания : Cited References: 33. - This work was supported by projects nos. NSh-7810.2010.3, RNP.2.1.1.3455, 27.1 and 3.9.1 of the Russian Academy of Sciences, 5 and 144 of the Siberian Branch of the Russian Academy of Sciences, and State contract no. 02.740.11.0220 according to the program Research and Scientific-Pedagogical Brainpower of Innovated Russia.
Предметные рубрики: OPTICAL-PROPERTIES
SEMICONDUCTOR MICROCAVITIES
2ND-HARMONIC GENERATION
HETEROGENEOUS MEDIA
MODE
ENHANCEMENT
DISPERSION
SYSTEM
Аннотация: The spectral properties of a one-dimensional photonic crystal with a defect nanocomposite layer that consists of metallic nanoballs distributed in a transparent matrix and is characterized by an effective resonance permittivity are studied. The problem of calculating the transmission, reflection, and absorption spectra of p-polarized waves in such structures is solved for oblique incidence of light, and the spectral manifestation of defect-mode splitting as a function of the volume fraction of nanoballs and the structural parameters is studied. The splitting is found to depend substantially on the nanoball concentration in the defect, the defect layer thickness, and the angle of incidence. The angle of incidence is found at which the resonance frequency of the nanocomposite is located near the edge of the bandgap or falls in the frequency region of a continuous spectrum. The resonance situation appearing in this case results in an additional transmission band or an additional bandgap in the transmission spectrum.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Mitskan V. A., Shustin M. S.
Заглавие : Ground-State Fermion Parity and Caloric Properties of a Superconducting Nanowire
Место публикации : J. Exp. Theor. Phys. - 2019. - Vol. 129, Is. 3. - P.426-437. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776119080144
Примечания : Cited References: 74. - This work was supported by the Russian Foundation for Basic Research (project nos. 16-02-00073, 18-32-00443, 18-42-243017, 18-42-243018), the Government of the Krasnoyarsk Kray, the Krasnoyarsk Kray Science Foundation within the scientific projects “Contact Phenomena and Magnetic Disorder in the Formation and Detection of Topologically Protected Edge States in Semiconductor Nanostructures” (project no. 18-42-243018), “Manifestation of Coulomb Interactions and Bounded-Geometry Effects in the Properties of Topological Edge States of Nanostructures with Spin–Orbit Interactions” (project no. 18-42-243017). One of us (Sh. M. S.) thanks the Council for Grants of the Russian President (project nos. MK-3594.2018.2 and MK-3722.2018.2).
Аннотация: Abstract: The ground-state structure and fermion parity have been determined for a semiconductor nano-wire with a strong Rashba spin–orbit interaction and proximity-induced superconductivity placed in an external magnetic field under periodic boundary conditions. Allowance for the open boundaries is shown to cause the topologically nontrivial parameter region to be partitioned into a set of subregions with a different ground-state fermionic parity. This peculiarity is related to the emergence of edge modes with nonmonotonically changing excitation energies in the system as its parameters change. At the quantum transition point, at which the ground-state fermionic parity changes, the edge-mode energy is zero. The magneto- and electrocaloric effects are shown to be effective characteristics that allow the series of quantum transitions in an open nanowire to be identified experimentally. These effects at low temperatures exhibit an anomalous behavior in the parameter region for which topologically stable Majorana modes are realized in long nanowires. © 2019, Pleiades Publishing, Inc.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Shaikhutdinov K. A., Khrustalev B. P., Aleksandrov K. S.
Заглавие : Transport properties of high-temperature superconductor plus semiconductor composites with different carrier concentration
Место публикации : Phys. Solid State: American Institute of Physics, 1997. - Vol. 39, Is. 5. - P.735-740. - ISSN 1063-7834, DOI 10.1134/1.1129959
Примечания : Cited References: 26
Предметные рубрики: CRITICAL CURRENTS
WEAK LINKS
JUNCTIONS
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity rho(T), critical current density J(c)(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). (C) 1997 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Петров, Михаил Иванович, Balaev D. A., Шайхутдинов, Кирилл Александрович, Khrustalev B. P., Aleksandrov K. S.
Заглавие : Transport properties of high-temperature superconductor + semiconductor composites with different carrier concentration
Место публикации : Physics of the Solid State. - 1997. - Vol. 39, Is. 5. - P.735-740. - ISSN 1063-7834
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity p(T), critical current density Jc(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). В© 1997 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Shaikhutdinov K. A., Khrustalev B. P., Aleksandrov K. S.
Заглавие : Transport properties of composites high temperature superconductor + semiconductor with different carrier concentration
Место публикации : Physica C-Superconductivity and its Applications. - 1997. - Vol. 282, Is. PART 4. - P.2449-2450. - ISSN 0921-4534
Ключевые слова (''Своб.индексиров.''): carrier concentration--critical current density (superconductivity)--high temperature superconductors--semiconductor materials--thermal effects--transport properties--superconductor semiconductor superconductor junctions--composite materials
Аннотация: Composites HTSC + semiconductor with different carrier concentrations were prepared as a model of Josephson type contacts. Experimental temperature dependences of the critical current density Jc(T) in the composites are presented. The best congruence of experiment with theory was reached for the Schussler-Kummel consideration of Andreev scattering in S-Sm-S (S-superconductor, Sm-semiconductor) junctions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kobyakov A. V., Turpanov I. A., Patrin G. S., Yushkov V. I., Yarikov S. A., Volochaev M. N., Zhivaya Ya. A.
Заглавие : The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect
Коллективы : Euro-Asian Symposium "Trends in MAGnetism"
Место публикации : J. Phys. Conf. Ser. - 2019. - Vol. 1389, Is. 1. - Ст.012028. - ISSN 1742-6588, DOI 10.1088/1742-6596/1389/1/012028. - ISSN 1742-6596 (eISSN)
Примечания : Cited References: 13. - These studies are conducted with financial support from the Russian Foundation for Basic Research (grant No.18-02-00161-a).
Аннотация: CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the temperature greater than 100K.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Popkov S. I., Shaihutdinov K. A., Petrov M. I.
Заглавие : The mechanisms responsible for broadening of the resistive transition under magnetic field in the Josephson junction network realized in bulk YBCO+CuO composites
Коллективы : International Workshop on Weak Superconductivity
Разночтения заглавия :авие SCOPUS: The mechanisms responsible for broadening of the resistive transition under magnetic field in the Josephson junction network realized in bulk YBCO + CuO composites
Место публикации : Physica C. - 2006. - Vol. 435, Is. 1-2. - P.12-15. - ISSN 0921-4534, DOI 10.1016/j.physc.2006.01.008
Примечания : Cited References: 15
Предметные рубрики: SUPERCONDUCTORS
MODEL
Ключевые слова (''Своб.индексиров.''): josephson network--ybco plus cuo composites--dissipation--magnetic field--dissipation--josephson network--magnetic field--ybco + cuo composites--composite materials--copper compounds--mathematical models--phase transitions--semiconductor junctions--yttrium compounds--creep model--josephson network--ybco + cuo composites--magnetic field effects
Аннотация: The experimental results of the effect of the magnetic field (up to 60 kOe) on the broadening of the resistive transition of bulk composites Y3/4Lu1/4Ba2CU3O7 (YBCO) + CuO are presented. These composites represent the network of the tunnel-type Josephson junctions where the copper oxide acts as a material forming barriers between YBCO crystallites. The mechanisms responsible for broadening of the resistive transition under magnetic field are discussed. The analysis of experimental R(7) dependences have shown that in the low field range 0-10(2) Oe, the R(7) dependences are described well by the Ambegaokar-Halperin (AH) model. In the range 10(3)-6 x 10(4) Oe, the dissipation follows Arrhenius law R similar to exp(-U(H)/k(B)T) characteristic for thermally activated flux creep model. In the range H similar to 10(2)-10(3), the crossover from AH to flux creep dissipation mechanisms occurs. (c) 2006 Elsevier B.V. All rights reserved.
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