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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Rotter I., Sadreev A. F.
Заглавие : Zeros in single-channel transmission through double quantum dots
Место публикации : Phys. Rev. E: AMERICAN PHYSICAL SOC, 2005. - Vol. 71, Is. 4. - Ст.46204. - ISSN 1063-651X, DOI 10.1103/PhysRevE.71.046204
Примечания : Cited References: 28
Предметные рубрики: PHASE EVOLUTION
RESONANCE
TRANSPORT
SYSTEMS
Ключевые слова (''Своб.индексиров.''): fano interference--fano resonances--overlapping resonances--transmission amplitude--channel capacity--eigenvalues and eigenfunctions--function evaluation--hamiltonians--mathematical models--mathematical operators--matrix algebra--resonance--signal interference--semiconductor quantum dots
Аннотация: By using a simple model we consider single-channel transmission through a double quantum dot that consists of two single dots coupled by a wire of finite length L. Each of the two single dots is characterized by a few energy levels only, and the wire is assumed to have only one level whose energy depends on the length L. The transmission is described by using S matrix theory and the effective non-Hermitian Hamilton operator H-eff of the system. The decay widths of the eigenstates of H-eff depend strongly on energy. The model explains the origin of the transmission zeros of the double dot that is considered by us. Mostly, they are caused by (destructive) interferences between neighboring levels and are of first order. When, however, both single dots are identical and their transmission zeros are of first order, those of the double dot are of second order. First-order transmission zeros cause phase jumps of the transmission amplitude by pi, while there are no phase jumps related to second-order transmission zeros. In this latter case, a phase jump occurs due to the fact that the width of one of the states vanishes when crossing the energy of the transmission zero. The parameter dependence of the widths of the resonance states is determined by the spectral properties of the two single dots.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gluck M., Kolovsky A. R., Korsch H. J., Zimmer F.
Заглавие : Wannier-Stark resonances in semiconductor superlattices
Место публикации : Phys. Rev. B: AMERICAN PHYSICAL SOC, 2002. - Vol. 65, Is. 11. - Ст.115302. - ISSN 1098-0121, DOI 10.1103/PhysRevB.65.115302
Примечания : Cited References: 22
Предметные рубрики: ELECTRIC-FIELD
STATES
LADDERS
BREAKDOWN
BLOCH
LOCALIZATION
Аннотация: Wannier-Stark states for semiconductor superlattices in strong static fields, where the interband Landau-Zener tunneling cannot be neglected, are rigorously calculated. The lifetime of these metastable states was found to show multiscale oscillations as a function of the static field, which is explained by an interaction with above-barrier resonances. An equation, expressing the absorption spectrum of semiconductor superlattices in terms of the resonance Wannier-Stark states, is obtained and used to calculate the absorption spectrum in the region of high static fields.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gluck M., Kolovsky A. R., Korsch H. J.
Заглавие : Wannier-Stark resonances in optical and semiconductor superlattices
Место публикации : Phys. Rep.-Rev. Sec. Phys. Lett.: ELSEVIER SCIENCE BV, 2002. - Vol. 366, Is. 3. - P103-182. - ISSN 0370-1573, DOI 10.1016/S0370-1573(02)00142-4
Примечания : Cited References: 234
Предметные рубрики: UNIFORM ELECTRIC-FIELD
QUANTUM CHAOTIC SCATTERING
FRANZ-KELDYSH OSCILLATIONS
METAL-INSULATOR-TRANSITION
ALTERNATING SITE ENERGIES
GAAS-ALAS SUPERLATTICES
RANDOM UNITARY MATRICES
WAVE-GUIDE ARRAYS
BLOCH OSCILLATIONS
PERTURBATION-THEORY
Ключевые слова (''Своб.индексиров.''): wannier-stark resonances--semiconductor superlattices--optical lattices--resonance statistics--quantum chaos--optical lattices--quantum chaos--resonances statistics--semiconductor superlattices--wannier-stark resonances
Аннотация: In this work, we discuss the resonance states of a quantum particle in a periodic potential plus a static force. Originally, this problem was formulated for a crystal electron subject to a static electric field and it is nowadays known as the Wannier-Stark problem. We describe a novel approach to the Wannier-Stark problem developed in recent years. This approach allows to compute the complex energy spectrum of a Wannier-Stark system as the poles of a rigorously constructed scattering matrix and solves the Wannier-Stark problem without any approximation. The suggested method is very efficient from the numerical point of view and has proven to be a powerful analytic tool for Wannier-Stark resonances appearing in different physical systems such as optical lattices or semiconductor superlattices. (C) 2002 Elsevier Science B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chernozatonskii L. A., Sorokin P. B., Bruning J. W.
Заглавие : Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms
Место публикации : Appl. Phys. Lett. - 2007. - Vol. 91, Is. 18. - Ст.183103. - ISSN 0003-6951, DOI 10.1063/1.2800889
Примечания : Cited References: 24
Предметные рубрики: CARBON
GAS
Ключевые слова (''Своб.индексиров.''): electronic properties--energy gap--graphite--hydrogen--semiconductor materials--superlattices--electronic spectra--graphene sheets--quasi-two-dimensional heterostructures--semiconducting nanostructures--nanostructured materials
Аннотация: It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the formation of 2HG-SL changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with n, but with nonzero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of zigzag strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. (C) 2007 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Shaikhutdinov K. A., Khrustalev B. P., Aleksandrov K. S.
Заглавие : Transport properties of high-temperature superconductor plus semiconductor composites with different carrier concentration
Место публикации : Phys. Solid State: American Institute of Physics, 1997. - Vol. 39, Is. 5. - P.735-740. - ISSN 1063-7834, DOI 10.1134/1.1129959
Примечания : Cited References: 26
Предметные рубрики: CRITICAL CURRENTS
WEAK LINKS
JUNCTIONS
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity rho(T), critical current density J(c)(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). (C) 1997 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Петров, Михаил Иванович, Balaev D. A., Шайхутдинов, Кирилл Александрович, Khrustalev B. P., Aleksandrov K. S.
Заглавие : Transport properties of high-temperature superconductor + semiconductor composites with different carrier concentration
Место публикации : Physics of the Solid State. - 1997. - Vol. 39, Is. 5. - P.735-740. - ISSN 1063-7834
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity p(T), critical current density Jc(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). В© 1997 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Shaikhutdinov K. A., Khrustalev B. P., Aleksandrov K. S.
Заглавие : Transport properties of composites high temperature superconductor + semiconductor with different carrier concentration
Место публикации : Physica C-Superconductivity and its Applications. - 1997. - Vol. 282, Is. PART 4. - P.2449-2450. - ISSN 0921-4534
Ключевые слова (''Своб.индексиров.''): carrier concentration--critical current density (superconductivity)--high temperature superconductors--semiconductor materials--thermal effects--transport properties--superconductor semiconductor superconductor junctions--composite materials
Аннотация: Composites HTSC + semiconductor with different carrier concentrations were prepared as a model of Josephson type contacts. Experimental temperature dependences of the critical current density Jc(T) in the composites are presented. The best congruence of experiment with theory was reached for the Schussler-Kummel consideration of Andreev scattering in S-Sm-S (S-superconductor, Sm-semiconductor) junctions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : IVANOVA N. B., CHERNOV V. K.
Заглавие : THE TEMPERATURE-DEPENDENCE OF MAGNETIZATION IN THE MAGNETIC SEMICONDUCTOR HGCR2SE4
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1986. - Vol. 28, Is. 6. - P1941-1943. - ISSN 0367-3294
Примечания : Cited References: 4
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ignatchenko V. A., Mankov Y. I., Maradudin A. A.
Заглавие : The spectrum and damping of waves in partially randomized multilayers
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 1999. - Vol. 11, Is. 13. - P.2773-2790. - ISSN 0953-8984, DOI 10.1088/0953-8984/11/13/013
Примечания : Cited References: 24
Предметные рубрики: SPIN-WAVES
SEMICONDUCTOR SUPERLATTICES
LOCALIZATION
SYSTEMS
Аннотация: The spectrum and damping of waves in partially randomized multilayer structures are calculated. A method of calculation that was proposed and demonstrated earlier, for the model of a superlattice with a harmonic dependence of its material parameters along its axis in the initial state, is extended to the case of a multilayer structure (i.e., a superlattice with sharp interfaces). One- and three-dimensional random modulations of the period are considered, and the correlation function of the superlattice is derived as a series in which each term is a product of a harmonic and a monotonically decaying function. The law of decay of the correlation function is Gaussian for smooth inhomogeneities, and has different forms for one- and three-dimensional short-wavelength inhomogeneities. The spectrum and damping of waves in the superlattice described by this correlation function are found in the weak-coupling approximation in the vicinities of all of the odd Brillouin zone boundaries. Analytical dependences of the main characteristics of the spectrum and damping on the zone number n are obtained. The conditions for the closing of the gaps at the Brillouin zone boundaries are derived, and depend on the dimensionality of the inhomogeneities and the degree of their smoothness.
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