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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
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Alekseev, K. N.
Pendulum limit, chaos and phase-locking in the dynamics of ac-driven semiconductor superlattices / K. N. Alekseev, F. V. Kusmartsev // Phys. Lett. A. - 2002. - Vol. 305, Is. 5. - P. 281-288, DOI 10.1016/S0375-9601(02)01420-2. - Cited References: 60 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary
Рубрики:
STRANGE NONCHAOTIC ATTRACTORS
   DC VOLTAGE GENERATION
   JOSEPHSON-JUNCTIONS
   GAAS/ALAS SUPERLATTICE
   BLOCH OSCILLATIONS
   TERAHERTZ RADIATION
   ELECTRIC-FIELD
   THZ RADIATION
   FREQUENCY
   TRANSPORT
Кл.слова (ненормированные):
semiconductor superlattice -- pendulum -- chaos -- phase-locking -- Josephson junction -- Chaos -- Josephson junction -- Pendulum -- Phase-locking -- Semiconductor superlattice -- analytic method -- analytical parameters -- article -- dynamics -- electric potential -- semiconductor -- temperature
Аннотация: We describe a limiting case when nonlinear dynamics of an ac-driven semiconductor superlattice in the miniband transport regime is governed by a periodically forced and damped pendulum equations. We find analytically the conditions for a transition to chaos. With increasing temperature the chaos disappears. We also discuss fractional do voltage states in a superlattice originating from phase-locked states of the pendulum. (C) 2002 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Oulu Univ, Dept Phys Sci, FIN-90014 Oulu, Finland
LV Kirenskii Inst Phys, Theory Nonlinear Proc Lab, Krasnoyarsk 660036, Russia
Loughborough Univ Technol, Dept Phys, Loughborough LE11 3TU, Leics, England
ИФ СО РАН
Department of Physical Sciences, University of Oulu, P.O. Box 3000, FIN-90014, Oulu, Finland
Theory of Nonlin. Proc. Laboratory, Kirensky Institute of Physics, Krasnoyarsk 660036, Russian Federation
Department of Physics, Loughborough University, Loughborough LE11 3TU, United Kingdom

Доп.точки доступа:
Kusmartsev, F. V.
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    Aliovalent substitution toward reinforced structural rigidity in Ce3+-doped garnet phosphors featuring improved performance / T. Hu [et al.] // J. Mater. Chem. C. - 2019. - Vol. 7, Is. 46. - P. 14594-14600, DOI 10.1039/c9tc05354a. - Cited References: 38. - This work was supported by the National Natural Science Foundation of China (No. 51722202 and 51972118), the Guangdong Provincial Science & Technology Project (2018A050506004) and the Fundamental Research Funds for the Central Universities (D2190980). . - ISSN 2050-7534
   Перевод заглавия: Алиовалентное замещение с целью усиления структурной жесткости в люминофорных гранатах, легированных Ce3 + и имеющих улучшенные характеристики
Кл.слова (ненормированные):
Color -- Deterioration -- Efficiency -- Gallium alloys -- Garnets -- III-V semiconductors -- Indium alloys -- Photoluminescence -- Reinforcement -- Rigidity -- Semiconductor alloys -- Thermal Engineering -- Thermodynamic stability
Аннотация: Highly efficient phosphors with thermal stability and color-tunable emission are required for the fabrication of phosphor-converted white light-emitting diodes (pc-WLEDs). Currently developed engineering strategies are generally successful in photoluminescence tuning but, unfortunately, suffer severe deterioration in emission intensity/efficiency and/or thermal stability. Herein, an efficient aliovalent substitution strategy toward reinforced structural rigidity is proposed and demonstrated experimentally. By incorporating Be2+ ion into the garnet-type Lu2SrAl4SiO12:Ce3+ phosphor, the phosphor shows enhanced internal/external quantum efficiency, from 79.2%/26.7% to 84.5%/32.9%, photoluminescence tuning from green (peaking at ∼512 nm) to yellow (peaking at ∼552 nm), and zero thermal quenching, even up to 200 °C. The Be2+ substitution at the Al2/Si2 site enables stable and rigid local surroundings around the Ce3+ activator, which is responsible for the unprecedented performance. In addition, high-quality warm WLED devices with a luminous efficiency of 158.1 lm W-1, correlated color temperature of 3858 K and high color rendering index of 81.7, are obtained by combining Lu2SrAl4SiO12:Ce3+,Be2+ as the yellow emitter, CaAlSiN3:Eu2+ as the red emitter and a blue-emitting InGaN chip. These findings highlight a new strategy for performance optimization of LED phosphors by selecting rigid covalent compounds with further reinforced structural rigidity via aliovalent substitution.

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Держатели документа:
State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, 510641, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation

Доп.точки доступа:
Hu, T.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Xia, Z.; Zhang, Q.
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    Analytic gradient for the adaptive frozen orbital bond detachment in the fragment molecular orbital method / D. G. Fedorov [et al.] // Chem. Phys. Lett. - 2009. - Vol. 477, Is. 1-3. - P. 169-175, DOI 10.1016/j.cplett.2009.06.072. - Cited Reference Count: 49. - Гранты: We thank Professor M. Suenaga of Kyushu University for continuing his development of the modeling software FACIO and its FMO interface. D. G. F. and K. K. were supported by the a Grant-in- Aid for Scientific Research (JSPS, Japan) and the Next Generation SuperComputing Project, Nanoscience Program (MEXT, Japan). J.H.J. was supported by a Skou Fellowship from the Danish Research Agency (Forskningsradet for Natur og Univers). - Финансирующая организация: JSPS, Japan; Next Generation SuperComputing Project; MEXT, Japan; Danish Research Agency . - JUL 28. - ISSN 0009-2614
Рубрики:
DENSITY-FUNCTIONAL THEORY
   GEOMETRY OPTIMIZATIONS
   SEMICONDUCTOR NANOWIRES
   SILICON NANOWIRES
   METHOD FMO
   ENERGY
   SURFACES
   RECONSTRUCTION
   CHEMISTRY
   PROTEINS
Кл.слова (ненормированные):
Energy gradients -- Fragment molecular orbital methods -- Future applications -- Geometry optimization -- Numerical criteria -- Silicon Nanowires -- Molecular modeling -- Molecular orbitals
Аннотация: We have developed and implemented the analytic energy gradient for the bond detachment scheme in the fragment molecular orbital method (FMO) suitable to describe solids, and applied it to the geometry optimization of a silicon nanowire at several levels of theory. In addition, we have examined in detail the effects of the particular choice of the fragmentation upon the accuracy and introduced a number of numerical criteria to characterize the errors. The established route is expected to provide guidance for future applications of FMO to surfaces, solids and nanosystems. (C) 2009 Elsevier B. V. All rights reserved.

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Держатели документа:
Natl Inst Adv Ind Sci & Technol, RICS, Tsukuba, Ibaraki 3058568, Japan
SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Univ Copenhagen, Dept Chem, DK-2100 Copenhagen, Denmark
Kyoto Univ, Grad Sch Pharmaceut Sci, Sakyo Ku, Kyoto 6068501, Japan

Доп.точки доступа:
Fedorov, D.G.; Kitaura, K.; Avramov, P. V.; Аврамов, Павел Вениаминович; Jensen, J.H.
}
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Arkhipkin, V. G.
Pulse pair propagation under conditions of induced transparency: adiabatic approximation / V. G. Arkhipkin, I. V. Timofeev ; ed.: SA Gurevich, SA Gurevic ; Laser Optics 2000 Conference (2000 ; Jun ; 26-30 ; St. Petersburg) // Laser optics 2000: semiconductor lasers and optical communication. Ser. proceedings of the society of photo-optical instrumentation engineers (SPIE) : SPIE-Int. Soc. Optical Engineering, 2001. - Vol. 4354. - P. 111-117, DOI 10.1117/12.418816. - Cited References: 18 . - ISBN 0277-786X. - ISBN 0-8194-4044-2

РУБ Optics
Рубрики:
ELECTROMAGNETICALLY INDUCED TRANSPARENCY
   COHERENT POPULATION TRANSFER
   LASER-PULSES
   MULTILEVEL SYSTEMS
   QUANTUM
Кл.слова (ненормированные):
adiabatic population transfer -- coherent population trapping -- electromagnetically induced transparency -- counterintuitive pulse sequence
Аннотация: The features of spatial and temporal evolution of two short laser pulses propagating in three-level medium under conditions of coherent population trapping and adiabatic population transfer is investigated in adiabatic approximation. It is shown that in both cases pulses can penetrate into a medium at a distance considerably exceeding the length of linear absorption of a single weak probe pulse in absence of a coupling pulse at adjacent transition. The difference of spatial and temporal evolution of level populations in processes of coherent population trapping and adiabatic population transfer is demonstrated. Also we show that the concept of dressed-field pulses is consequence of Manley-Raw relation.

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Доп.точки доступа:
Timofeev, I. V.; Тимофеев, Иван Владимирович; Gurevich, S. A. \ed.\; Архипкин, Василий Григорьевич; Laser Optics, International Conference (2000 ; June ; 26-30 ; St. Petersburg)
}
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    Atypical quantum confinement effect in silicon nanowires / P. B. Sorokin [et al.] // J. Phys. Chem. A. - 2008. - Vol. 112, Is. 40. - P9955-9964, DOI 10.1021/jp805069b. - Cited Reference Count: 25. - Гранты: This work was in part partially supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) as well as by Russian Fund of Basic Researches (grant 08-02-01096) (L.A.C.). P.V.A. acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute for Fundamental Chemistry. The geometry of all presented structures was visualized by ChemCraft software.SUP25/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations. - Финансирующая организация: Japan Science and Technology Agency (JST); Russian Fund of Basic Researches [08-02-01096] . - OCT 9. - ISSN 1089-5639
Рубрики:
ELECTRONIC-STRUCTURE
   OPTICAL-PROPERTIES
   SI
   DENSITY
   WIRES
   EXCHANGE
   ATOMS
   DOTS
Кл.слова (ненормированные):
Electric wire -- Energy gap -- Gallium alloys -- Mathematical models -- Nanostructured materials -- Nanostructures -- Nanowires -- Quantum confinement -- Quantum electronics -- Semiconductor quantum dots -- Silicon -- Ami methods -- Band gaps -- Blue shifts -- Dinger equations -- Linear junctions -- Monotonic decreases -- Quantum confinement effects -- Quantum dots -- Semiempirical -- Silicon nanowires -- System sizes -- Theoretical models -- Nanocrystalline silicon -- nanowire -- quantum dot -- silicon -- article -- chemistry -- electron -- quantum theory -- Electrons -- Nanowires -- Quantum Dots -- Quantum Theory -- Silicon
Аннотация: The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.

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Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia
LV Kirenskii Inst Phys, SB RAS, Krasnoyarsk 660036, Russia
RAS, N M Emanuel Inst Biochem Phys, Moscow 119334, Russia
Kyoto Univ, Fukui Inst Fundamental Chem, Kyoto 6068103, Japan
Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan

Доп.точки доступа:
Sorokin, P. B.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Avramov, P. V.; Chernozatonskii, L.A.; Fedorov, D.G.
}
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Avramov, P. V.
Effect of carbon network defects on the electronic structure of semiconductor single-wall carbon nanotubes / P. V. Avramov, B. I. Yakobson, G. E. Scuseria // Phys. Solid State. - 2004. - Vol. 46, Is. 6. - P. 1168-1172, DOI 10.1134/1.1767262. - Cited References: 15 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
JUNCTIONS
Аннотация: For a single-wall (14, 0) carbon nanotube, the total density of electronic states of the ideal structure and of some possible defect structures is calculated in the framework of the band theory approach using Gaussian-type orbitals and the approximation of the generalized density gradient. It is shown that allowance for defects of the atomic structure of a nanotube makes it possible to adequately describe the existing experimental data on nanotube electronic structure. In the framework of the same approach, the total density of electronic states is calculated for an intermolecular contact of (5, 5) and (10, 0) single-wall carbon nanotubes formed due to the creation of a 5-7 defect. It is shown that the electronic states related to the contact region and the 5-7 defect lie in vicinity of the Fermi level. (C) 2004 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Rice Univ, Ctr Biol & Environm Nanotechnol, Houston, TX 77005 USA
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Ctr. for Biol./Environ. Nanotechnol., Rice University, Houston, TX 77005-1892, United States

Доп.точки доступа:
Yakobson, B. I.; Scuseria, G. E.; Аврамов, Павел Вениаминович
}
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Balaev, A. D.
Quantum oscillations of resistance and magnetization in the degenerate semiconductor n-HgCr2Se4 / A. D. Balaev, V. A. Gavrichkov, S. G. Ovchinnikov // J. Exp. Theor. Phys. - 1998. - Vol. 86, Is. 5. - P. 1026-1029, DOI 10.1134/1.558549. - Cited References: 6 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary

Аннотация: In the magnetic field range Delta H = 8-60 kOe we observed and studied the anomalous oscillations in the magnetic field dependence of the resistance and magnetization of single crystals of n-HgCr2Se4. The absence of periodicity in 1/H in the Delta H = 8-20 kOe range can be explained by the non-Fermi-liquid behavior of the electron subsystem and agrees with the theory of the de Haas-van Alphen in systems with intermediate valence. In stronger fields, Delta H = 20-60 kOe, the amplitude of the fundamental harmonic decreases, with the number and amplitude of the higher-order harmonics increasing, As a result, noise is superimposed on the signal as magnetic field strength grows. The temperature dependence of the magnetization is the sum of the monotonic spin-wave contribution and the oscillating part. (C) 1998 American Institute of Physics. [S1063-7761(98)02205-7].

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Публикация на русском языке Квантовые осцилляции сопротивления и намагниченности в вырожденном полупроводнике n-HgCr_2Se_4 [Текст] / А. Д. Балаев [и др.] // Журн. эксперим. и теор. физ. - 1998. - Т. 113 Вып. 5. - С. 1877-1882

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660074, Russia
Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 117907, Russia
ИФ СО РАН

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Балаев, Александр Дмитриевич
}
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BELYAEV, B. A.
CONSTANT TENSION IN MAGNETIC FILM-SEMICONDUCTOR STRUCTURE DURING FERROMAGNETIC-RESONANCE / B. A. BELYAEV, G. I. FROLOV // Zhurnal Tek. Fiz. - 1980. - Vol. 50, Is. 6. - P. 1354-1355. - Cited References: 4 . - ISSN 0044-4642

РУБ Physics, Applied

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Доп.точки доступа:
FROLOV, G. I.
}
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10.

BELYAEV, B. A.
GALVANO-SPIN-WAVE RESONANCE IN A SEMICONDUCTOR FERROMAGNETIC LAMINAR STRUCTURE / B. A. BELYAEV, V. V. TYURNEV, G. I. FROLOV // Zhurnal Tek. Fiz. - 1982. - Vol. 52, Is. 1. - P. 126-128. - Cited References: 2 . - ISSN 0044-4642

РУБ Physics, Applied

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Доп.точки доступа:
TYURNEV, V. V.; FROLOV, G. I.
}
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11.

BELYAEV, B. A.
RESONANCE THERMOMAGNETIC EFFECT IN THE MAGNETIC-FILM SEMICONDUCTOR STRUCTURE / B. A. BELYAEV, V. V. TYURNEV, G. I. FROLOV // Zhurnal Tek. Fiz. - 1982. - Vol. 52, Is. 2. - P. 340-344. - Cited References: 4 . - ISSN 0044-4642

РУБ Physics, Applied

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Доп.точки доступа:
TYURNEV, V. V.; FROLOV, G. I.
}
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12.

Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures / N. V. Volkov [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 526-529, DOI 10.4028/www.scientific.net/SSP.190.526 . - ISBN 1012-0394. - ISBN 9783037854365
Кл.слова (ненормированные):
Hybrid structure -- Mis transition -- Photoelectric effect -- Schottky barrier -- Channel switching -- Comparative analysis -- Electron hole pairs -- Fe films -- Fe layer -- Ferromagnetic films -- Hybrid structure -- Optical effects -- Optical radiations -- Photogeneration -- Planar geometries -- Schottky barriers -- Semiconductor substrate -- Temperature variation -- Critical currents -- Interfaces (materials) -- Magnetic materials -- Photoelectricity -- Schottky barrier diodes -- Silicon -- Switching circuits -- Transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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13.

Bulgakov, E. N.
Current-voltage characteristics of the resonant tunnelling double-barrier structure under time-periodical perturbation / E. N. Bulgakov, A. F. Sadreev // J. Phys.: Condens. Matter. - 1996. - Vol. 8, Is. 45. - P. 8869-8887, DOI 10.1088/0953-8984/8/45/020. - Cited References: 38 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
SEMICONDUCTOR DOUBLE-BARRIER
   OSCILLATING QUANTUM-WELL
   DEPENDENT TRANSPORT
   INFRARED-RADIATION
   TUNNELING TIMES
   HETEROSTRUCTURES
   TRANSMISSION
   MODEL
   FREQUENCIES
   COHERENT
Аннотация: We consider a typical semiconductor resonant tunnelling GaAs/AlGaAs/GaAs nanostructure which forms a double-barrier potential with quasienergy levels corresponding to transition frequencies in the infrared and microwave regions. Two types of dynamical perturbation of the heterostructure in the form V-1(x, t) = V(1)x cos Omega t and V-2(t) = V-2 cos Omega t are considered. We analyse numerically a reconstruction of the electron transmission through the heterostructure and the current-voltage characteristics (IVC) under the influence of these dynamical perturbations. Both weak and strong perturbations are considered. We investigate the dependences of the transmission on the electron energy and the frequency of the external field with the main accent on the case where a frequency of the perturbation is tuned to a transition between quasienergies of the double-barrier structure. it is found that these resonant phenomena give rise to new peaks and dips in the IVC. In particular, it is shown that the dipole type of perturbation V-1(x, t) gives rise to a Rabi splitting of the transmission peaks and under certain conditions to a Rabi splining of the IVC peaks and dips. We demonstrate that dynamical perturbation may induce a direct current opposite to the direction of the applied voltage, and that this phenomenon takes the form of a sharp dip which has a resonant origin. It is observed that the dipole type of perturbation V-1(x, t) of laser radiation is more effective for tuning the IVC than the first perturbation V-2(t). Also absorption and emission of energy by an electron transmitted through the DBRTS are considered.

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Держатели документа:
Kirensky Institute of Physics, 660036, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
}
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14.

Bulgakov, E. N.
Phase rigidity and avoided level crossings in the complex energy plane / E. N. Bulgakov, I. . Rotter, A. F. Sadreev // Phys. Rev. E. - 2006. - Vol. 74, Is. 5. - Ст. 56204, DOI 10.1103/PhysRevE.74.056204. - Cited References: 40 . - ISSN 1539-3755

РУБ Physics, Fluids & Plasmas + Physics, Mathematical
Рубрики:
OPEN QUANTUM-SYSTEMS
   FANO RESONANCES
   S-MATRIX
   DOT
   CONTINUUM
   TRANSMISSION
   COHERENCE
   TRANSPORT
   BILLIARDS
   PROBE
Кл.слова (ненормированные):
Eigenvalues and eigenfunctions -- Hamiltonians -- Resonance -- Rigidity -- Semiconductor quantum dots -- Biorthogonal eigenfunctions -- Open quantum system -- Phase rigidity -- Quantum theory
Аннотация: We consider the effective Hamiltonian of an open quantum system, its biorthogonal eigenfunctions phi(lambda), and define the value r(lambda)=(phi(lambda)parallel to phi(lambda))/ that characterizes the phase rigidity of the eigenfunctions phi(lambda). In the scenario with avoided level crossings, r(lambda) varies between 1 and 0 due to the mutual influence of neighboring resonances. The variation of r(lambda) is an internal property of an open quantum system. In the literature, the phase rigidity rho of the scattering wave function Psi(E)(C) is considered. Since Psi(E)(C) can be represented in the interior of the system by the phi(lambda), the phase rigidity rho of the Psi(E)(C) is related to the r(lambda) and therefore also to the mutual influence of neighboring resonances. As a consequence, the reduction of the phase rigidity rho to values smaller than 1 should be considered, at least partly, as an internal property of an open quantum system in the overlapping regime. The relation to measurable values such as the transmission through a quantum dot, follows from the fact that the transmission is, in any case, resonant at energies that are determined by the real part of the eigenvalues of the effective Hamiltonian. We illustrate the relation between phase rigidity rho and transmission numerically for small open cavities.

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Держатели документа:
Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
ИФ СО РАН
Max-Planck-Institut fur Physik Komplexer Systeme, D-01187 Dresden, Germany
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation
Department of Physics and Measurement, Technology Linkoping University, S-581 83 Linkoping, Sweden

Доп.точки доступа:
Rotter, I.; Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
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15.

Cation-substituted TmXMn1-XS solid solutions with special magnetic and electrical properties / O. B. Romanova [et al.] // 20th Int. Conf. on Magnetism (ICM-2015) : book of abstracts. - 2015. - P. 241
Рубрики:
Semiconductor spintronics

Материалы конференции

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Galyas, A. I.; Галяс А. И.; Yanushkevich, K. I.; Янушкевич, Казимир Иосифович; Sokolov, V. V.; Соколов В. В.; International Conference on Magnetism(20 ; 2015 ; Jul ; 5-10 ; Barselona, Spain)
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16.

CEMS analysis of phase formation in nanostructured films (Fe/Si) 3 / S. N. Varnakov [et al.] // Solid State Phenomena. - 2011. - Vol. 168-169. - P. 277-280, DOI 10.4028/www.scientific.net/SSP.168-169.277 . - ISSN 1662-9779
Кл.слова (ненормированные):
interfaces metal/semiconductor -- magnetic silicides -- molecular beam epitaxy technology -- semiconductor and magnetic geterostructures
Аннотация: Determination of stable phases formed at the Fe/Si interface in (Fe/Si)n structure, grown by thermal evaporation in an ultrahigh vacuum system was performed using conversion electron Mossbauer spectroscopy (CEMS).

РИНЦ
Держатели документа:
Instituto de Ciencia de Materiales de Aragon,Departamento de Ciencia de Materiales e Ingenieria Metalurgica,CSIC-Universidad de Zaragoza
Instituto de Ciencia de Materiales de Aragon,Departamento de Fisica de la Materia Condensada,CSIC-Universidad de Zaragoza
Kirensky Institute of Physics,Siberian Division,Russian Academy of Sciences
Siberian Aerospace University

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Bartolomé, J.; Rubin, J.; Badia, L.; Bondarenko, G. V.; Бондаренко, Геннадий Васильевич; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg)
}
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17.

Chernozatonskii, L. A.
Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms / L. A. Chernozatonskii, P. B. Sorokin, J. W. Bruning // Appl. Phys. Lett. - 2007. - Vol. 91, Is. 18. - Ст. 183103, DOI 10.1063/1.2800889. - Cited References: 24 . - ISSN 0003-6951

РУБ Physics, Applied
Рубрики:
CARBON
GAS
Кл.слова (ненормированные):
Electronic properties -- Energy gap -- Graphite -- Hydrogen -- Semiconductor materials -- Superlattices -- Electronic spectra -- Graphene sheets -- Quasi-two-dimensional heterostructures -- Semiconducting nanostructures -- Nanostructured materials
Аннотация: It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the formation of 2HG-SL changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with n, but with nonzero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of zigzag strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. (C) 2007 American Institute of Physics.

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Держатели документа:
Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119334, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Humboldt Univ, Math Inst, D-12489 Berlin, Germany
ИФ СО РАН
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, 4 Kosigina St., Moscow 119334, Russian Federation
Siberian Federal University, 79 Svobodny Ave., Krasnoyarsk 660041, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Academgorodok, Krasnoyarsk 660036, Russian Federation
Institute of Mathematics, Humboldt University of Berlin, Berlin 12489, Germany

Доп.точки доступа:
Sorokin, P. B.; Bruning, J. W.
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18.

Coherent carrier dynamics in semiconductor superlattices / E. . Diez [et al.] // Phys. Lett. A. - 1998. - Vol. 240, Is. 1-2. - P. 109-111, DOI 10.1016/S0375-9601(98)00023-1. - Cited References: 7 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary
Рубрики:
RABI OSCILLATIONS
Аннотация: We investigate the coherent dynamics of carriers in semiconductor superlattices driven by ac-dc electric fields. We solve numerically the time-dependent effective-mass equation for the envelope function. We find that carriers undergo Rabi oscillations when the driving frequency is close to the separation between minibands. (C) 1998 Elsevier Science B.V.

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Держатели документа:
Univ Carlos III Madrid, GISC, Dept Matemat, E-28911 Madrid, Spain
Univ Vigo, Dept Tecnol Comunicac, E-36200 Vigo, Spain
Univ Complutense Madrid, GISC, Dept Fis Mat, E-28040 Madrid, Spain
Univ Calif Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA
Univ Calif Los Alamos Natl Lab, CNLS, Los Alamos, NM 87545 USA
LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Diez, E.; Gomez-Alcala, R.; Dominguez-Adame, F.; Sanchez, A.; Berman, G. P.
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19.

    Composition design, optical gap and stability investigations of lead-free halide double perovskite Cs2AgInCl6 / J. Zhou [et al.] // J. Mater. Chem. A. - 2017. - Vol. 5, Is. 29. - P. 15031-15037, DOI 10.1039/c7ta04690a. - Cited References: 42. - The present work was supported by the National Natural Science Foundation of China (Grants 91622125 and 51572023), Natural Science Foundations of Beijing (2172036), and Fundamental Research Funds for the Central Universities (FRF-TP-16-002A3). XZ acknowledges the support from the National Key Research and Development Program of China Grant No. 2016YFB0700700. . - ISSN 2050-7488
   Перевод заглавия: Моделирование состава, оптический зазор и исследования стабильности безсвинцового галогенидного двойного перовскита Cs2AgInCl6
Кл.слова (ненормированные):
Crystal growth -- Design for testability -- Energy gap -- Optical properties -- Perovskite -- Perovskite solar cells -- Solar absorbers -- Solar cells -- Structural design -- Band gap engineering -- Direct-gap semiconductor -- Environmentally benign -- Hydrothermal crystal growth -- Hydrothermal reaction -- Optoelectronic applications -- Rock salt structures -- Solar cell absorbers -- Crystal structure
Аннотация: The discovery of lead-free double perovskites provides a feasible way of searching for air-stable and environmentally benign solar cell absorbers. Herein we report the design and hydrothermal crystal growth of double perovskite Cs2AgInCl6. The crystal structure, morphology related to the crystal growth habit, band structure, optical properties, and stability are investigated in detail. This perovskite crystallized in a cubic unit cell with the space group Fm3m and is composed of [AgCl6] and [InCl6] octahedra alternating in a ordered rock-salt structure, and the as-obtained crystal size is dependent on the hydrothermal reaction time. Cs2AgInCl6 is a direct gap semiconductor with a wide band gap of 3.23 eV obtained experimentally and 3.33 eV obtained by DFT calculation. This theoretically predicted and experimentally confirmed optical gap is a prototype of the band gaps that are direct and optically allowed except at the single high-symmetry k-point, which didn't raise interest before but have potential applications in future technologies. Cs2AgInCl6 material with excellent moisture, light and heat stability shows great potential for photovoltaic and other optoelectronic applications via further band gap engineering. © 2017 The Royal Society of Chemistry.

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Держатели документа:
Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, Russian Federation
Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, College of Electronic Science and Technology, Shenzhen University, Guangdong, China
College of Optoelectronic Engineering, Shenzhen University, Guangdong, China

Доп.точки доступа:
Zhou, J.; Xia, Z.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Zhang, X.; Peng, D.; Liu, Q.
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20.

Contributions from Inter-grain Boundaries to the Magneto-resistive Effect in Polycrystalline High-T (C) Superconductors. The Underlying Reason of Different Behavior for YBCO and BSCCO Systems / D. A. Balaev [et al.] // J. Supercond. Nov. Magn. - 2011. - Vol. 24, Is. 7. - P. 2129-2136, DOI 10.1007/s10948-011-1166-9. - Cited References: 30. - This work is supported by program N5 of RAS, project N7. . - ISSN 1557-1939

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
HIGH-TEMPERATURE SUPERCONDUCTORS
   PHASE-SLIP
   TRANSPORT-PROPERTIES
   TRANSITION
   FIELD
   COMPOSITES
   BULK
   TAPES
   YBA2CU3O7-DELTA
   DISSIPATION
Кл.слова (ненормированные):
BSCCO -- YBCO -- Intergrain boundaries -- Magnetoresistance -- BSCCO -- Intergrain boundaries -- Magnetoresistance -- YBCO -- BSCCO -- BSCCO system -- Comparative studies -- High Tc superconductors -- High-field -- Inter-grain -- Irreversibility lines -- Magneto-resistive effect -- Polycrystalline -- Resistive transition -- Standard measurements -- Weak pinning -- YBCO -- Bismuth -- Electric resistance -- Grain boundaries -- High temperature superconductors -- Lead -- Magnetic fields -- Magnetoelectronics -- Magnetoresistance -- Magnetos -- Superconductivity -- Yttrium barium copper oxides -- Semiconductor metal boundaries
Аннотация: In order to clarify the mechanisms in charge of broadening of resistive transition R(T) in magnetic fields of bismuth-based polycrystalline high-T (C) superconductor (HTSC), a comparative study of Bi1.8Pb0.3Sr1.9Ca2Cu3O (x) (BSCCO) and YBa2Cu3O7-delta (YBCO) have been performed. Magnetoresistive effects and irreversibility line obtained from magnetic measurements have been studied. It was established that (1) for YBCO, the smooth part of R(T) dependence unambiguously corresponds to dissipation in the intergrain boundaries for arbitrary magnetic fields; (2) for polycrystalline BSCCO, the smooth part of R(T) dependences correspond to dissipation within intergrain boundary subsystem in the field range H <10(2) Oe only, while standard measurements of R(T) dependences in magnetic field range H > 10(2) Oe reflect the dissipation processes occurring both in intergrain boundary and HTSC grain subsystems; (3) for the high-field range, the contribution from intergrain boundaries of BSCCO can be distinguished from magnetoresistance R(H) dependences obtained at high enough current density on textured samples. It is proposed that various magneto-resistive properties of these classical HTSC systems are due comparatively weak pinning in BSCCO.

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Держатели документа:
[Balaev, D. A.
Popkov, S. I.
Semenov, S. V.
Bykov, A. A.
Dubrovskiy, A. A.
Shaikhutdinov, K. A.
Petrov, M. I.] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Balaev, D. A.
Popkov, S. I.
Sabitova, E. I.
Dubrovskiy, A. A.
Shaikhutdinov, K. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
L.V. Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Semenov, S. V.; Семенов, Сергей Васильевич; Bykov, A. A.; Быков, Алексей Анатольевич; Sabitova, E. I.; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Petrov, M. I.; Петров, Михаил Иванович
}
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