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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lukyanenko A. V., Tarasov A. S., Shanidze L. V., Volochaev M. N., Zelenov F. V., Yakovlev I. A., Bondarev I. A., Volkov N. V.
Заглавие : Technique for fabricating ferromagnetic/silicon active devices and their transport properties
Место публикации : J. Surf. Invest. - 2021. - Vol. 15, Is. 1. - P.65-69. - ISSN 10274510 (ISSN), DOI 10.1134/S1027451021010109
Примечания : Cited References: 15. - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, the Presidium of the Russian Academy of Sciences (Program no. 32 “Nanostructures: Physics, Chemistry, Biology, and Fundamentals of Technologies”), and the Russian Foundation for Basic Research, the Government of Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243 022
Аннотация: Semiconductor nanowires are unique materials for studying nanoscale phenomena; the possibility of forming silicon nanowires on bulk silicon-on-insulator substrates in a top-down process ensures complete incorporation of this technology into integrated electronic systems. In addition, the use of ferromagnetic contacts in combination with the high quality of ferromagnetic–semiconductor interfaces open up prospects for the use of such structures in spintronics devices, in particular, spin transistors. A simple approach is proposed to create semiconductor nanowire-based active devices, specifically, bottom-gate Schottky-barrier field-effect transistors with a metal (Fe) source and drain synthesized on a silicon-on-insulator substrate and the transport characteristics of the designed transistors are investigated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Shanidze, Lev, Bondarev I. A., Baron F. A., Lukyanenko A. V., Yakovlev I. A., Volochaev M. N., Volkov N. V.
Заглавие : Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
Место публикации : Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст.2100459. - ISSN 1862-6300, DOI 10.1002/pssa.202100459. - ISSN 1862-6319(eISSN)
Примечания : Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886
Предметные рубрики: NANOSTRUCTURES
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyarova T. E., Shanidze, Lev V., Lukyanenko A. V., Baron F. A., Krasitskaya, Vasilisa V., Kichkailo, Anna S., Tarasov A. S., Volkov N. V.
Заглавие : Protein biosensor based on Schottky barrier nanowire field effect transistor
Место публикации : Talanta. - 2022. - Vol. 239. - Ст.123092. - ISSN 0039-9140 (ISSN), DOI 10.1016/j.talanta.2021.123092. - ISSN 1873-3573 (eISSN)
Примечания : Cited References: 44. - The reported study was funded by RFBR according to the research project № 20-32-90134. The authors thank RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (projects nos. 20-42-243007 and 20-42-240013) and the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) for financial support. Electron microscopy investigations were conducted with the help of equipment of the Krasnoyarsk Territorial Shared Resource Center, Krasnoyarsk Scientific Center, Russian Academy of Sciences
Аннотация: A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (IDS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyarova T. E., Lukyanenko A. V., Shanidze L. V., Krasitskaya V. V., Tarasov A. S., Volkov N. V.
Заглавие : Protein biosensor based on nanowire field effect transistor
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials: Proceedings. - VLadivostok: Dalnauka Publishing, 2020. - Ст.VII.31.03p. - P.195. - ISBN 978-5-8044-1698-1
Примечания : The work is carried out with the assistance of Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS» and Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project № 18-42-243013.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Arkhipkin V. G., Myslivets S. A.
Заглавие : All-optical transistor using a photonic-crystal cavity with an active Raman gain medium
Место публикации : Physical Review A - Atomic, Molecular, and Optical Physics. - 2013. - Vol. 88, Is. 3. - Ст.033847. - P. - ISSN 1050-2947, DOI 10.1103/PhysRevA.88.033847
Аннотация: We propose a design of an all-optical transistor based on a one-dimensional photonic-crystal cavity doped with a four-level N-type active Raman gain medium. The calculated results show that in a photonic-crystal cavity of this kind transmission and reflection of the probe (Raman) beam are strongly dependent on the optical switching power. Transmission and reflection of the probe beam can be greatly amplified or attenuated. Therefore the optical switching field can serve as a gate field of the transistor to effectively control propagation of the weak probe field. It is shown that the group velocity of the probe pulse can be controlled in the range from subluminal (slow light) to superluminal (fast light).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Eriksson O., Sandalov I.
Заглавие : Effects of non-orthogonality and electron correlations on the time-dependent current through quantum dots
Место публикации : Phys. Rev. B: AMERICAN PHYSICAL SOC, 2002. - Vol. 66, Is. 19. - Ст.195319. - ISSN 1098-0121, DOI 10.1103/PhysRevB.66.195319
Примечания : Cited References: 46
Предметные рубрики: GREENS-FUNCTION APPROACH
TUNNEL-JUNCTIONS
LOCAL OXIDATION
ANDERSON MODEL
TRANSPORT
NONORTHOGONALITY
CONDUCTANCE
EQUILIBRIUM
TRANSISTOR
IMPURITY
Аннотация: Three issues are analyzed in the physics of time-dependent tunneling current through a quantum dot with strongly correlated electrons coupled to two external contact leads: (i) nonorthogonality of the states of electrons in the leads and in the quantum dot, (ii) non-Fermi statistics of the excitations in the quantum dot, and iii) kinematic shift of the quantum dot levels. The contributions from nonorthogonality effectively decrease the mixing interaction between the leads and the quantum dot and the width of the quantum dot level whereas the Gibbs statistics slightly changes the spectral weights of quantum dot levels, and decreases the widths, but does not introduce drastical changes to the current. The kinematic interactions are taken into account within the loop correction. For the case of block signal, the time-dependent current shows oscillations starting at the onset and termination of the bias voltage pulse.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Eriksson O., Sandalov I.
Заглавие : Many-body approach to spin-dependent transport in quantum dot systems
Место публикации : Phys. Rev. Lett.: AMERICAN PHYSICAL SOC, 2002. - Vol. 88, Is. 22. - Ст.226601. - ISSN 0031-9007, DOI 10.1103/PhysRevLett.88.226601
Примечания : Cited References: 37
Предметные рубрики: SINGLE-ELECTRON TRANSISTOR
COULOMB-BLOCKADE
ANDERSON IMPURITY
ROOM-TEMPERATURE
TUNNEL-JUNCTIONS
EVEN NUMBER
MODEL
MAGNETORESISTANCE
OSCILLATIONS
CONDUCTANCE
Аннотация: By means of a diagram technique for Hubbard operators, we show the existence of a spin-dependent renormalization of the localized levels in an interacting region, e.g., quantum dot, modeled by the Anderson Hamiltonian with two conduction bands. It is shown that the renormalization of the levels with a given spin direction is due to kinematic interactions with the conduction subbands of the opposite spin. The consequence of this dressing of the localized levels is a drastically decreased tunneling current for ferromagnetically ordered leads compared to that of paramagnetically ordered leads. Furthermore, the studied system shows a spin-dependent resonant tunneling behavior for ferromagnetically ordered leads.
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