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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Edelman I. S., Esters M., Johnson D. C., Yurkin G. Yu., Tarasov A. S., Rautsky M. V., Volochaev M. N., Lyashchenko S. A., Ivantsov R. D., Petrov D. A., Solovyov L. A.
Заглавие : The competition between magnetocrystalline and shape anisotropy on the magnetic and magneto-transport properties of crystallographically aligned CuCr2Se4 thin films
Место публикации : J. Magn. Magn. Mater.: Elsevier, 2017. - Vol. 443. - P.107-115. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2017.07.022
Примечания : Cited References: 35. - The work was supported partly by the Grant of the President of the Russian Federation no. NSh-7559.2016.2. M.E. and D.C.J. acknowledge support from the National Science Foundation under grant DMR-1266217.
Ключевые слова (''Своб.индексиров.''): copper selenide--cucr2se4 films--magnetic anisotropy--trasnverse kerr effect--magnetic resonance--magnetoresistance
Аннотация: Crystallographically aligned nanocrystalline films of the ferromagnetic spinel CuCr2Se4 were successfully synthesized and their structure and alignment were confirmed by X-ray diffraction and high-resolution transmission electron microscopy. The average size of the crystallites is about 200–250 nm, and their (1 1 1) crystal planes are parallel to the film plane. A good match of the film’s electronic structure to that of bulk CuCr2Se4 is confirmed by transverse Kerr effect measurements. Four easy 〈1 1 1〉 axes are present in the films. One of these axes is oriented perpendicular and three others are oriented at an angle of 19.5° relative to the film plane. The magnetic properties of the films are determined by a competition between the out-of-plane magnetocrystalline anisotropy and the in-plane shape anisotropy. Magnetic measurements show that the dominating type of anisotropy switches from shape to magnetocrystalline anisotropy near 160 K, which leads to a switch of the effective easy axis from inside the film plane at room temperature to perpendicular to the film plane as the temperature decreases. At last, a moderately large, negative value of the low-temperature magnetoresistance was observed for the first time in CuCr2Se4 films.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bondarev I. A.
Заглавие : Magnetic and transport properties of the epitaxial Fe3Si film on a Si substrate
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : Int. workshop on actual probl. of cond. matt. phys.: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P.25
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyakov D. A., Rautskii M. V., Lukyanenko A. V., Yakovlev I. A., Ovchinnikov S. G., Volkov N. V.
Заглавие : Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : International workshop on actual problems of condensed matter physics: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P.21 (Шифр В37/H99-812624296)
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.140-143. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.092. - ISSN 1873-4766(eISSN)
Примечания : Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Предметные рубрики: SPINTRONICS
BREAKDOWN
SILICON
SPIN
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Semenov S. V., Pochekutov M. A.
Заглавие : Anisotropy of the magnetoresistance hysteresis in the granular superconductor Y-Ba-Cu-O at different magnetic-field and transport-current orientations
Место публикации : J. Appl. Phys.: American Institute of Physics, 2017. - Vol. 122, Is. 12. - Ст.123902. - ISSN 00218979 (ISSN), DOI 10.1063/1.4986253
Примечания : Cited References: 45. - This study was supported by the Russian Foundation for Basic Research, Government of the Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 16-48-243018.
Ключевые слова (''Своб.индексиров.''): anisotropy--high temperature superconductors--hysteresis--magnetic fields--magnetic flux--magnetism--magnetoresistance--different-magnetic fields--external magnetic field--granular superconductors--macroscopic transport--magnetic flux compression--magneto transport properties--model representation--transport currents--superconducting materials
Аннотация: Dissipation in granular high-temperature superconductors (HTSs) during the passage of macroscopic transport current j is mainly determined by carrier tunneling through intergrain boundaries (Josephson junctions). In the presence of external magnetic field H, it is necessary to take into account the significant magnetic flux compression, which can lead to the situation when the effective field Beff in the intergrain boundaries exceeds the external field by an order of magnitude. This is observed as a wide hysteresis of the field dependence of magnetoresistance R(H). In this study, we investigate the R(H) hysteresis evolution in granular 1-2-3 HTSs in different j-H orientations. The magnetic flux compression significantly affects the magnetoresistance and its hysteresis for both perpendicular (H ⊥ j) and parallel (H ∥ j) orientations. The obtained experimental data on the R(H) hysteresis at the arbitrary angles θ = ∠H, j are explained using the approach developed for describing the magnetoresistance hysteresis in granular HTSs with regard to the magnetic flux compression and the model representations proposed by Daghero et al. [Phys. Rev. B 66(13), 11478 (2002)]. A concept of the effective field in the intergrain medium explains the well-known anisotropy of the magnetotransport properties of granular HTSs.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Tarasov I. A., Rautskii M. V., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G., Patrin G. S., Volkov N. V.
Заглавие : Multiterminal planar devices based on hybrid structures: fabrication and spin-dependent transport
Коллективы : Moscow International Symposium on Magnetism, Московский государственный университет им. М.В. Ломоносова, Российский фонд фундаментальных исследований
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2017): 1-7 July 2017 : book of abstracts. - 2017. - Ст.2PO-2PO-I1-19. - P.172
Примечания : Cited References: 1. - This study was supported by the Russian Foundation for Basic Research and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, projects nos. 16-42-243046 and 16-42-243060
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kagan, M. Yu., Val'kov V. V., Aksenov S. V.
Заглавие : Coulomb interactions-induced perfect spin-filtering effect in a quadruple quantum-dot cell
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.15-18. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.106. - ISSN 1873-4766(eISSN)
Примечания : Cited References:29. - We acknowledge fruitful discussions with P.I. Arseyev, N.S. Maslova, V.N. Mantsevich and R.Sh. Ikhsanov. This work was supported by the Comprehensive programme SB RAS no. 0358-2015-0007, the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects nos. 15-02-03082, 16-42-243056, 16-42-242036, 17-42-240441. M.Yu.K. thanks the Program of Basic Research of the National Research University Higher School of Economics for support.
Предметные рубрики: SPINTRONICS
TRANSPORT
MODEL
Ключевые слова (''Своб.индексиров.''): spin filter--quantum interference--fano-feshbach resonance--coulomb--correlations
Аннотация: A quadruple quantum-dot (QQD) cell is proposed as a spin filter. The transport properties of the QQD cell were studied in linear response regime on the basis of the equations of motion for retarded Green's functions. The developed approach allowed us to take into account the influence of both intra-and interdot Coulomb interactions on charge carriers' spin polarization. It was shown that the presence of the insulating bands in the conductance due to the Coulomb correlations results in the emergence of spin-polarized windows (SPWs) in magnetic field leading to the high spin polarization. We demonstrated that the SPWs can be effectively manipulated by gate fields and considering the hopping between central dots in both isotropic and anisotropic regimes.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Bondarev I. A., Ovchinnikov S. G.
Заглавие : Marnetic-field sensitivity of charge transport in silicon-based hybrid structures : Invited
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : International workshop on actual problems of condensed matter physics: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - С. 10 (Шифр В37/H99-812624296)
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Eremin E. V., Korobtsov V .V., Balashev V. V., Vikulov V. A., Solovyov L. A., Volkov N. V.
Заглавие : Characterization and magnetotransport properties of textured Fe3O4 films
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O10.21. - P.465. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 2. - This work was partially supported by RFBR project no. 14-02-00234, the RAS «Far East» Program No 0262-2015-0057
Ключевые слова (''Своб.индексиров.''): magnetite--texture film--spin-dependent transport
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Samoshkina Yu. E., Edelman I. S., Sokolov A. E., Rautskii M. V., Semenov S. V., Andreev N. V., Chichkov V. I.
Заглавие : La-Sr and Pr-Sr polycrystalline manganite films: correlation between magneto-optical and transport properties
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P6.7. - P.315. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : The work was supported partly by the Russian Foundation for Basic Researches, Grants Nos. 14-02-01211 and 16-32-00209
Ключевые слова (''Своб.индексиров.''): hole-doped manganites--thin films--magnetic circular dichroism--metal-insulator transition
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11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V.
Заглавие : Spin-polarized transport through Majorana bound states in a canted magnetic field
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O4.1. - P.221. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 3. - This study was supported by the Comprehensive programme SB RAS no.0358-2015-0007, the Russian Foundation for Basic Research, projects nos. 15-42-
Ключевые слова (''Своб.индексиров.''): semiconducting wire--majorana fermions--topological superconductivity
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Varnakov S. N., Yakovlev I. A., Ovchinnikov S. G.
Заглавие : Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/ p -Si hybrid structure
Место публикации : AIP Adv.: American Institute of Physics, 2017. - Vol. 7, Is. 1. - Ст.015206. - ISSN 21583226 (ISSN), DOI 10.1063/1.4974876
Примечания : Cited References: 29. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research Projects Nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Ключевые слова (''Своб.индексиров.''): electric fields--impact ionization--ionization--magnetic fields--magnetism--manganese--schottky barrier diodes--effect of magnetic field--high magnetic fields--low temperatures--magnetic and electric fields--magnetotransport effects--magnetotransport phenomena--schottky barriers--switching devices--magnetic field effects
Аннотация: We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kagan, M. Yu., Val'kov V. V., Aksenov S. V.
Заглавие : Effects of anisotropy and Coulomb interactions on quantum transport in a quadruple quantum-dot structure
Место публикации : Phys. Rev. B: American Physical Society, 2017. - Vol. 95, Is. 3. - Ст.035411. - ISSN 2469-9950, DOI 10.1103/PhysRevB.95.035411. - ISSN 2469-9969(eISSN)
Примечания : Cited References:62. - We acknowledge fruitful discussions with P. I. Arseyev, N. S. Maslova, V. N. Mantsevich, and R. Sh. Ikhsanov. This work was financially supported by the Comprehensive programme SB RAS No. 0358-2015-0007, the RFBR, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Projects No. 15-02-03082, No. 15-42-04372, No. 16-42-243056, and No. 16-42-242036. M. Yu. K. thanks the Program of Basic Research of the National Research University Higher School of Economics for support.
Предметные рубрики: 2-BAND HUBBARD-MODEL
ONE NARROW-BAND
ANOMALOUS RESISTIVITY
Аннотация: We present an analytical and numerical investigation of the spectral and transport properties of a quadruple quantum-dot (QQD) structure which is one of the popular low-dimensional systems in the context of fundamental quantum physics study, future electronic applications, and quantum calculations. The density of states, occupation numbers, and conductance of the structure were analyzed using the nonequilibrium Green's functions in the tight-binding approach and the equation-of-motion method. In particular the anisotropy of hopping integrals and on-site electron energies as well as the effects of the finite intra- and interdot Coulomb interactions were investigated. It was found out that the anisotropy of the kinetic processes in the system leads to the Fano-Feshbach asymmetrical peak. We demonstrated that the conductance of the QQD device has a wide insulating band with steep edges separating triple-peak structures if the intradot Coulomb interactions are taken into account. The interdot Coulomb correlations between the central QDs result in the broadening of this band and the occurrence of an additional band with low conductance due to the Fano antiresonances. It was shown that in this case the conductance of the anisotropic QQD device can be dramatically changed by tuning the anisotropy of on-site electron energies.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V.
Заглавие : Electron transport through Josephson junction containing a dimeric structure
Место публикации : J. Low Temp. Phys.: Springer, 2016. - Vol. 185, Is. 5-6. - P.446-452. - ISSN 00222291 (ISSN), DOI 10.1007/s10909-016-1545-5
Примечания : Cited References: 23. - This study was supported by the Presidium of the Russian Academy of Sciences, Program "Actual problems of low temperature physics”; the Russian Foundation for Basic Research, Projects Nos. 13-02-00523, 14-02-31280, and 15-42-04372; and the Scholarship of the President of the Russian Federation No. SP-6361.2013.5
Ключевые слова (''Своб.индексиров.''): josephson junction--andreev reflection--spin-flip processes--spin dimer
Аннотация: The dc Josephson effect in a superconductor/dimeric molecule/superconductor junction has been investigated by means of the nonequilibrium Green’s function method and the Keldysh diagram technique. The application of the atomic representation has allowed to simplify considerably the computation of the supercurrent and occupation numbers and receive the general expressions which take into account all processes of the Andreev reflection in the loopless approach. It is significant that the expressions for the current and occupation numbers are valid for different multilevel structures in the Josephson junction. The sf-exchange interaction between the electron spin and the spins of the dimer leads to the suppression of the critical current due to a new set of Andreev bound states. © 2016, Springer Science+Business Media New York.
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16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kagan M. Yu., Val'kov V. V., Aksenov S. V.
Заглавие : Spin-dependent transport in quadruple quantum-dotstructure taking into account coulomb correlations
Коллективы : Moscow International Symposium on Magnetism, Московский государственный университет им. М.В. Ломоносова, Российский фонд фундаментальных исследований
Место публикации : Moscow International Symposium on Magnetism (MISM-2017): 1-7 July 2017 : book of abstracts. - 2017. - Ст.4OR-P-14. - P.709 (Шифр 29916280)
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Bondarev I. A., Rautskii M. V., Lukyanenko A. V., Tarasov I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Room temperature spin accumulation effect in boron doped Si created by epitaxial Fe3Si/p-Si Schottky contact
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243046, 16-42-242036, 16-42-243060]
Место публикации : J. Surf. Ingestig. - 2018. - Vol. 12, Is. 4. - P.633-637. - ISSN 1027-4510, DOI 10.1134/S1027451018040171. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 16-42-243046, 16-42-242036 and 16-42-243060.
Предметные рубрики: HYBRID STRUCTURES
CURRENT-VOLTAGE
FILMS
TRANSPORT
SILICON
Ключевые слова (''Своб.индексиров.''): spintronics--hybrid structures--schottky diode--hanle effect--spin--accumulation
Аннотация: To study spin-dependent transport phenomena in Fe3Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. IaEuro'V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe3Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe3Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Fedoseev A. D.
Заглавие : Effect of total reflection from a symmetric two-channel device with fermion path nonanalyticity points induced by Rashba spin-orbit coupling
Место публикации : Bull. Russ. Acad. Sci. Phys. - 2018. - Vol. 82, Is. 5. - P.550-553. - ISSN 10628738 (ISSN), DOI 10.3103/S1062873818050313
Примечания : Cited References: 8. - The reported study was funded by Russian Foundation for Basic Research (project nos. 16-42-242036, 16-42-243056, and 17-42-240441), Government of Krasnoyarsk Territory, and Krasnoyarsk Region Science and Technology Support Fund to the research (project nos. 22/17, 24/17, and 02/17).
Ключевые слова (''Своб.индексиров.''): electron transport--nonanalyticity--rashba spin-orbit coupling--regular polygon--spin-orbit couplings--symmetric systems--total reflection--transmission coefficients
Аннотация: The effect Rashba spin-orbit coupling has on transmission coefficient through a symmetric system with fermion path nonanalyticity points is illustrated using the example of a regular polygon-shaped chain. It is shown that the current passage through a device is blocked at the critical spin-orbit coupling values determined by the system’s geometry. At the near-critical spin-orbit coupling values, electron transport is possible only in a narrow range of energies.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kagan M. Y., Aksenov S. V.
Заглавие : The influence of Coulomb correlations on nonequilibrium quantum transport in quadruple quantum-dot structure
Место публикации : JETP Letters. - 2018. - Vol. 107, Is. 8. - P.493-499. - ISSN 00213640 (ISSN), DOI 10.1134/S0021364018080027
Примечания : Cited References: 32. - We acknowledge fruitful discussions with P.I. Arseyev, N.S. Maslova and V.N. Mantsevich. This work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund (project nos. 16-02-00073, 17-42-240441, and 17-02-00135). The work of S.A. was supported by the Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project no. MK-3722.2018.2). The publication was prepared by M.K. within the framework of the Academic Fund Program at the National Research University Higher School of Economy in 2017-2018 (project no. 18-05-0024) and by the Russian Academic Excellence Project "5-100."
Аннотация: The description of quantum transport in a quadruple quantum-dot structure (QQD) is proposed taking into account the Coulomb correlations and nonzero bias voltages. To achieve this goal the combination of nonequilibrium Green’s functions and equation-of-motion technique is used. It is shown that the anisotropy of kinetic processes in the QQD leads to negative differential conductance (NDC). The reason of the effect is an interplay of the Fano resonances which are induced by the interdot Coulomb correlations. Different ways to increase the peak-to-valley ratio related to the observed NDC are discussed.
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20.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Aksenov S. V.
Заглавие : Spin-dependent nonequilibrium transport in a quadruple quantum-dot device
Коллективы : Российская академия наук, Физико-технический институт им. А.Ф. Иоффе РАН, "Spin Waves", International Symposium
Место публикации : International Symposium "Spin Waves 2018": Program. - 2018. - Sec. 2: Spintronics. - 2-1
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