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Magnetic properties and L1 0 phase formation in CoPt nanoparticles / S. V. Komogortsev [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 159-162, DOI 10.4028/www.scientific.net/SSP.190.159 . - ISBN 1012-0394. - ISBN 9783037854365
Кл.слова (ненормированные):
Hard magnetic -- Magnetic anisotropy -- Magnetic nanoparticles -- Remnant magnetization -- Annealing time -- CoPt nanoparticles -- Disorder-order -- Domain formation -- Hard magnetic -- Magnetic anisotropy energy -- Magnetic nanoparticles -- Phase formations -- Remnant magnetization -- Decomposition -- Magnetic anisotropy -- Magnetic materials -- Remanence -- Nanoparticles
Аннотация: The effect of the atomic disorder-order transformation on remanence, coercivity and magnetic anisotropy energy in CoPt nanoparticles prepared by thermal decomposition and annealed at 400oC for 4 and 16 hours has been studied. The observed remanence and magnetic anisotropy energy enhancement versus annealing time are discussed in the terms of ordering domain formation inside nanoparticles. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Komogortsev, S. V.; Комогорцев, Сергей Викторович; Chizhik, N. A.; Чижик Н.А.; Filatov, E. Yu.; Филатов Е.Ю.; Korenev, S. V.; Коренев С.В.; Shubin, Yu.V.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Yurkin, G.Yu.; Юркин, Глеб Юрьевич; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
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Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films / V. G. Myagkov [et al.] // Thin Solid Films. - 2014. - Vol. 552. - P. 86-91, DOI 10.1016/j.tsf.2013.12.029. - Cited References: 53 . - ISSN 0040-6090

РУБ Materials Science, Multidisciplinary + Materials Science, Coatings & Films + Physics, Applied + Physics, Condensed Matter
Рубрики:
PHASE-FORMATION
   MAGNETIC-PROPERTIES
   Mn5Ge3 FILMS
   X-RAY
   Ge(111)
   TRANSFORMATIONS
   DIFFUSION
   SPECTRA
   SYSTEM
   LAYERS
Кл.слова (ненормированные):
Manganite-germanium -- Solid state reaction -- First phase -- Mn5Ge3 alloy -- Carbon impurity -- Oxygen impurity -- Annealing -- Magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660049, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mikhlin, Y. L.; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Patrin, G. S.; Патрин, Геннадий Семёнович; Yurkin, G. Yu.; Юркин, Глеб Юрьевич
}
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Thermomagnetic behaviour and compositional irreversibility on (Fe/Si)3 multilayer films / L. Badía-Romano [et al.] // J. Magn. Magn. Mater. - 2014. - Vol. 364. - P. 24-33, DOI 10.1016/j.jmmm.2014.04.029. - Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SPUTTERED FE/SI SUPERLATTICES
   INTERLAYER EXCHANGE
   GIANT MAGNETORESISTANCE
   MAGNETIC-PROPERTIES
   SILICIDE FORMATION
   EPITAXIAL-GROWTH
   ROOM-TEMPERATURE
   IRON DISILICIDE
   TRILAYER FILMS
   THIN-FILMS
Кл.слова (ненормированные):
Fe-Si multilayer -- Chemical transformation -- Fe silicide -- Interlayer exchange coupling -- Magnetic domain -- in situ annealing
Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5
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Держатели документа:
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Ciencia Mat & Ingn Met, E-50018 Zaragoza, Spain
Univ Zaragoza, Inst Nanociencia Aragon, Lab Microscopias Avanzadas, E-50018 Zaragoza, Spain
Fdn ARAID, E-50004 Zaragoza, Spain
Univ Porto, Fac Ciencias, Dept Fis Astron, IN IFIMUP, P-4169007 Oporto, Portugal
Univ Oviedo, Dept Fis, E-33007 Oviedo, Spain
Univ Oviedo Principado Asturias, CSIC, CINN, E-33007 Oviedo, Spain
Forschungszentrum Julich, Elect Properties, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Aerospace Univ, Krasnoyarsk 660014, Russia
Siberian Fed Univ, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Badía-Romano, L.; Rubín, J.; Magén, C.; Bartolomé, F.; Sesé, J.; Ibarra, M.R.; Bartolomé, J.; Hierro-Rodriguez, A.; Martín, J.I.; Alameda, J.M.; Bürgler, D.E.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
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Yaroslavtsev, R. N.
The processes occurring at low temperature annealing in multilayer film structures of Co/Pd / R. N. Yaroslavtsev, L. A. Chekanova, R. S. Iskhakov // Third Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2015) : proceedings. - Vladivostok : Dalnauka, 2015. - Ст. VIII.21.09p. - P. 294-295 . - ISBN 978-5-8044-1556-4

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Доп.точки доступа:
Chekanova, L. A.; Чеканова, Лидия Александровна; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Ярославцев, Роман Николаевич; Asian School-Conference on Physics and Technology of Nanostructured Materials(3 ; 2015 ; Aug. ; 19-26 ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(3 ; 2015 ; авг. ; 19-26 ; Владивосток)
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Change in the magnetic properties of nanoferrihydrite with an increase in the volume of nanoparticles during low-temperature annealing / D. A. Balaev [et al.] // Phys. Solid State. - 2016. - Vol. 58, Is. 9. - P. 1782-1791, DOI 10.1134/S1063783416090092. - Cited References: 32. - This study was supported by the Ministry of Education and Science of the Russian Federation within the State Task for 2014-2016. . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
FERRIHYDRITE NANOPARTICLES
   BACTERIAL FERRIHYDRITE
   FERRITIN
   HYSTERESIS
   MOSSBAUER
   ORIGIN
Аннотация: The results of the investigation into the effect of low-temperature annealing of a powder of nanoparticles of bacterial ferrihydrite on its magnetic properties have been presented. It has been found that an increase in the time (up to 240 h) and temperature (in the range from 150 to 200°C) of annealing leads to a monotonic increase in the superparamagnetic blocking temperature, the coercive force, and the threshold field of the opening of the magnetic hysteresis loop (at liquid-helium temperatures), as well as to an increase in the magnetic resonance line width at low temperatures and in the magnetic susceptibility at room temperature. At the same time, according to the results of the analysis of the Mossbauer spectra, the annealing of ferrihydrite does not lead to the formation of new iron oxide phases. Most of these features are well consistent with the fact that the low-temperature annealing of ferrihydrite causes an increase in the size of nanoparticles, which is confirmed by the results of transmission electron microscopy studies. © 2016, Pleiades Publishing, Ltd.

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Публикация на русском языке Изменение магнитных свойств наноферригидрита в ходе низкотемпературного отжига, обусловленное ростом объeма наночастиц [Текст] / Д. А. Балаев [и др.] // Физ. тверд. тела : Физико-технический институт им. А. Ф. Иоффе РАН, 2016. - Т. 58 Вып. 9. - С. 1724–1732

Держатели документа:
Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Akademgorodok 50/38, Krasnoyarsk, Russian Federation
Siberian Federal University, Svobodny pr. 79, Krasnoyarsk, Russian Federation
International Scientific Centre for Organism Extreme States Research, Presidium of the Krasnoyarsk Scientific Centre of the Siberian Branch of the Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, Russian Federation
International Laboratory of High Magnetic Fields and Low Temperatures, ul. Gajowicka 95, Wroclaw, Poland

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Krasikov, A. A.; Красиков, Александр Александрович; Stolyar, S. V.; Столяр, Сергей Викторович; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Ladygina, V. P.; Yaroslavtsev, R. N.; Bayukov, O. A.; Баюков, Олег Артемьевич; Vorotynov, A. M.; Воротынов, Александр Михайлович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Dubrovskiy, A. A.; Дубровский, Андрей Александрович
}
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Effect of annealing on the magnetic properties of (Co40Fe40B20)x(SiO2)1–x granular nanocomposites / E. A. Denisova [et al.] // Bull. Russ. Acad. Sci. Phys. - 2016. - Vol. 80, Is. 11. - P. 1332-1334, DOI 10.3103/S1062873816110186. - Cited References: 31. - This work was supported by the Russian Foundation for Basic Research, project nos. 15-08-06673, 16-03-00256, and RFBR-KRFS 15-42-04171. . - ISSN 1062-8738
Кл.слова (ненормированные):
Annealing -- Magnetic properties -- Multilayers -- Spin waves -- Sputtering -- Concentration dependence -- Effect of annealing -- Granular composites -- Ion-beam sputtering -- Metal phase -- Spin wave resonances -- Ion beams
Аннотация: The effect of annealing on the magnetic properties of (Co40Fe40B20)x(SiO2)1–x granular composites fabricated via ion-beam sputtering is investigated. It is established that annealing changes the concentration dependences of the ferromagnetic resonance field and linewidth and shifts the regions of metal phase concentration corresponding to the spin-wave resonance. © 2016, Allerton Press, Inc.

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Публикация на русском языке Влияние термической обработки на магнитные свойства гранулированных нанокомпозитов (Co40Fe40B20)x(SiO2)1-x [Текст] / Е. А. Денисова [и др.] // Изв. РАН. Сер. физич. - 2016. - Т. 80 № 11. - С. 1500-1503

Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Voronezh State Technical University, Voronezh, Russian Federation

Доп.точки доступа:
Denisova, E. A.; Денисова, Елена Александровна; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Chekanova, L. A.; Чеканова, Лидия Александровна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Kalinin, Y. E.; Sitnikov, A. V.
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The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing / M. N. Volochaev [et al.] // J. Phys. Conf. Ser. - 2017. - Vol. 857, Is. 1. - Ст. 012053, DOI 10.1088/1742-6596/857/1/012053. - Cited References: 10 . - ISSN 1742-6588
Кл.слова (ненормированные):
Coatings -- High resolution transmission electron microscopy -- Molecular beam epitaxy -- Silicon -- Transmission electron microscopy -- Phase formations -- Polycrystalline -- Polycrystalline film -- Si(111) substrate -- Vacuum-annealing -- Annealing
Аннотация: The regularities of phase formation and thermal stability in Fe3Si(111)/Si(111) structure at stepped vacuum annealing (350, 450 and 550 °C) were investigated. The layer of 32 nm Fe3Si was deposited onto Si(111) substrate by molecular beam epitaxy at 260 °C. Transmission electron microscopy (TEM) measurements demonstrated that the film thickness increases by ∼19 % at 350 °C annealing without changing the phase composition. The polycrystalline -FeSi sublayer was formed on the interface at 450 °C annealing. Further annealing at 550 °C led to the ∼ 80 nm polycrystalline film formation containing the crystallites of -FeSi, Fe5Si3, and β-FeSi2 phases.

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Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Loginov, Yu. Yu.; Cherkov, A. G.; Kovalev, I. V.; International Conference on Films and Coatings(13th ; St. Petersburg)(18 - 20 April 2017)
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The effect of annealing on the structure and phase transitions of Na0.95Li0.05NbO3 / E. V. Bogdanov [et al.] // Ninth international seminar on ferroelastic physics (ISFP-9) : book of abstracts / org. com. I. N. Flerov [et al.] ; progr. com. V. I. Zinenko [et al.]. - 2018. - P. 26

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Доп.точки доступа:
Bunina, O. A.; Kuprina, Yu. A.; Lutokhin, A. G.; Raevskaya, S. I.; Titov, V. V.; Orlov, S. V.; Malitskaya, M. A.; Gorev, M. V.; Горев, Михаил Васильевич; Bondarev, V. S.; Бондарев, Виталий Сергеевич; Raevski, I. P.; International Seminar on Ferroelastic Physics(9 ; 2018 ; Sept. ; 12-15 ; Voronezh); Международный семинар по физике сегнетоэластиков(9(14) ; 2018 ; сент. ; 12-15 ; Воронеж); Российская академия наук; Воронежский государственный технический университет
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    Zobov, V. E.
    Sequences of selective rotation operators to engineer interactions for quantum annealing on three qutrits / V. E. Zobov, I. S. Pichkovskiy ; ed.: V. F. Lukichev, K. V. Rudenko // Proc. SPIE. - 2019. - Vol. 11022: International Conference on Micro- and Nano-Electronics 2018. - Ст. UNSP 110222V, DOI 10.1117/12.2521253. - Cited References: 21
   Перевод заглавия: Последовательности селективных операторов поворотов для создания взаимодействий для квантового отжига на трех кутритах

РУБ Nanoscience & Nanotechnology + Optics
Рубрики:
ALGORITHM
Кл.слова (ненормированные):
quantum annealing -- factorization -- qutrit -- selective rotation operators
Аннотация: We have done simulating of factorization the number 15 on three qutrits, represented by the spins S = 1, by quantum annealing. We assume that strong one-spin interaction allow selectively operate on different transitions between levels of the each qutrit. We present a sequence of selective rotation operators to engineer from dipole-dipole interaction a time-dependent effective Hamiltonian necessary for solving the problem. Also we find dependence of fidelity versus different parameters: magnetic field, total annealing time, and duration of time step, when the continuous variation of the Hamiltonian is replaced by a discrete one.

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Держатели документа:
KSC SB RAS, Kirensky Inst Phys, Fed Res Ctr, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660074, Russia.

Доп.точки доступа:
Pichkovskiy, I. S.; Lukichev, V.F. \ed.\; Rudenko, K.V. \ed.\; Зобов, Владимир Евгеньевич; International Conference on Micro- and Nano-Electronics(2018 ; Oct. ; 1-5 ; Zvenigorod, Russia)
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10.

    Зобов, Владимир Евгеньевич.
    Последовательности селективных операторов поворотов для создания взаимодействий для квантового отжига на трех кутритах / В. Е. Зобов, И. С. Пичковский // Сибир. физич. журнал. - 2019. - Т. 14, № 1. - С. 5–16 ; Siberian J. Phys., DOI 10.25205/2541-9447-2019-14-1-5-16. - Библиогр.: 23 . - ISSN 2541-9447
   Перевод заглавия: Sequences of Selective Rotation Operators to Engineer Interactions for Quantum Annealing on Three Qutrits
Рубрики:
Теоретическая и математическая физика
Кл.слова (ненормированные):
квантовый отжиг -- факторизация -- кутрит -- селективные операторы поворотов -- quantum annealing -- factorization -- qutrit -- selective rotation operators
Аннотация: Выполнено моделирование факторизации числа 15 на трех кутритах, представленных спинами S = 1, посредством квантового отжига. Предполагается, что сильное односпиновое взаимодействие позволяет селективно влиять на разные переходы между уровнями каждого из трех кутритов. Подобраны последовательности селективных операторов поворотов для создания из диполь-дипольного взаимодействия изменяющегося во времени эффективного гамильтониана, необходимого для решения задачи. Найдена зависимость точности от параметров магнитного поля, полного времени отжига и длительности временных шагов при замене непрерывного изменения гамильтониана на дискретное.
We have done simulating of factorization the number 15 on three qutrits S = 1 by quantum annealing. We assume that strong one-spin interaction allow selectively operate on different transitions between levels of the each qutrit. We present a sequence of selective rotation operators to engineer from dipole-dipole interaction a time-dependent effective Hamiltonian necessary for solving the problem. Also we find dependence of fidelity versus various parameters: magnetic field, total annealing time, and duration of time step, when the continuous variation of the Hamiltonian is replaced by a discrete one.

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Держатели документа:
Институт физики им. Л. В. Киренского СО РАН, Академгородок, 50, стр. 38, Красноярск, 660036, Россия
Сибирский федеральный университет, ул. Киренского, 28, Красноярск, 660074, Россия

Доп.точки доступа:
Пичковский, И. С.; Pichkovskiy, I. S.; Zobov, V. E.

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11.

    Пленки аморфного и кристаллического оксида никеля, полученные экстракционно-пиролитическим методом для электрохромных ячеек / А. Л. Белоусов [и др.] // Хим. технол. - 2019. - Т. 20, № 5. - С. 215-221, DOI 10.31044/1684-5811-2019-20-5-215-221. - Библиогр.: 8 . - ISSN 1684-5811
   Перевод заглавия: Films of amorphous and crystalline nickel oxide, produced by extraction-pyrolitic method for electrochromic cells
Кл.слова (ненормированные):
экстракты никеля -- экстракционно-пиролитическая технология -- тонкие пленки -- отжиг -- электрохромная ячейка -- nickel extract -- extraction-pyrolitic technology -- thin film -- annealing -- electrochromic cell
Аннотация: Представлены исследования тонких пленок оксида никеля, полученных экстракционно-пиролитическим методом на стеклянных и кварцевых подложках при температурах 380-600 °С. Пленки охарактеризованы методами атомно-силовой микроскопии и рентгеновской дифракции. Показано, что на стекле формируются аморфные, а на кварце - кристаллические пленки оксида никеля. Размер зерна в пленках зависит от температуры отжига, при этом повышенные температуры отжига приводят к рекристаллизации и снижению размера зерна в пленках NiO от 130 до 35 нм.
Study results of thin films of nickel oxide, produced by the extraction-pyrolitic method on glass and quartz substrates at temperatures 380-600 °С are presented. The film characteristics were obtained by the methods of atomic-force microscopy and X-ray diffraction. It has been found out that amorphous films are formed on glass and crystalline ones of nickel oxide are formed on quartz. Grain dimensions in the films depend on annealing temperature.

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Переводная версия Amorphous and Crystalline Nickel Oxide Films Obtained by the Extraction-Pyrolysis Method for Electrochromic Cells [Текст] / A. L. Belousov, T. N. Patrusheva, A. A. Karacharov [et al.] // Theor. Found. Chem. Eng. - 2020. - Vol. 54 Is. 4.- P.699-705

Держатели документа:
Балтийский государственный технический университет Военмех им. Д. Ф. Устинова
Институт общей и неорганической химии РАН
Институт физики им. Киренского СО РАН
Институт химии и химической технологии СО РАН
Сибирский федеральный университет

Доп.точки доступа:
Белоусов, А.Л.; Belousov A.L.; Патрушева, Т.Н.; Patrusheva T.N.; Карачаров, А.А.; Karacharov A.A.; Иваненко, Александр Анатольевич; Ivanenko, A. A.; Кирик, С.Д.; Kirik S.D.; Холькин, А.И.; Kholkin A.I.
}
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12.

Synthesis and transport properties of FET based on Heusler alloy thin films formed by rapid thermal annealing / A. V. Lukyanenko [et al.] // J. Phys.: Conf. Ser. - 2019. - Vol. 1410. - Ст. 012017, DOI 10.1088/1742-6596/1410/1/012017. - Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 17-02-00302 and supported in part by the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences, project II.8.70, and the Presidium of the Russian Academy of Sciences, Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies». . - ISSN 1742-6588. - ISSN 1742-6596

РУБ Crystal growth and structural properties of semiconductor materials and nanostructures

Аннотация: In this work we show a preparation technique of Co2FeSi full-Heusler alloy thin films on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The films of the Co2FeSi alloy were formed by a silicidation reaction, caused by RTA, between the ultrathin SOI (001) layer and the Fe/Co layers deposited on it. It is assumed that this technology is compatible with the process of formation of a half-metal source-drain in an advanced CMOS and SOI technology and will be applicable for the manufacture of a source-drain of a field-effect transistor. Schottky barrier field-effect transistors (FET) with a back-gate, based on silicon nanowires with source and drain of a Co2FeSi film, synthesized on an SOI substrate, were manufactured. The transport properties of the device were investigated.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk 660041, Russia
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk 660037, Russia

Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, L. V.; Шанидзе, Лев Викторович; Yakovlev, I. A.; Яковлев, Иван Александрович; Zelenov, F. V.; Зеленов, Ф. В.; Masugin, A. N.; Масюгин, Альберт Николаевич; Ivanov, A. B.; Иванов, А. Б.; Baron, F. A.; Барон, Филипп Алексеевич; Volkov, N. V.; Волков, Никита Валентинович; International School and Conference on optoelectronics, photonics, engineering and nanostructures(6 ; 2019 ; 22-25 April ; Saint Petersburg)
}
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13.

Zobov, V. E.
Associative memory on qutrits by means of quantum annealing / V. E. Zobov, I. S. Pichkovskiy // International Conference “Magnetic Resonance – Current State and Future Perspectives” (EPR-75) : book of abstracts. - Kazan, 2019. - P. 63. - Cited References: 6

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Pichkovskiy, I. S.; Зобов, Владимир Евгеньевич; "Magnetic Resonance - Current State and Future Perspectives", International Conference(2019 ; Sept. ; 23-27 ; Kazan, Russia); Казанский (Приволжский) федеральный университетКазанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН
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14.

Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing / I. V. Chepkasov, V. S. Baidyshev, E. V. Sukhanova [et al.] // Appl. Surf. Sci. - 2020. - Vol. 527. - Ст. 146736, DOI 10.1016/j.apsusc.2020.146736. - Cited References: 67. - We thank Dr. Ivan Tarasov for fruitful discussions. The research is carried out using the equipment of the shared research facilities of HPC computing resources at Lomonosov Moscow State University and resources of the Center for the Information and Computing of Novosibirsk State University. The molecular dynamics study of sputtering and annealing iron silicides was supported by the Russian Science Foundation, project no. 16-13-00060-П. All quantum-chemical calculations were supported by Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (No. K2-2020-009) . - ISSN 0169-4332
Кл.слова (ненормированные):
Fe3Si -- Epitaxial films -- Sputtering -- Annealing -- MD simulation
Аннотация: The iron silicides formation during epitaxial film grown process on the (100) and (111) silicon surfaces were investigated using molecular dynamics (MD). The iron and silicon atom deposition rate and silicon substrate temperature influence on the formed iron silicide structure and stoichiometric composition were studied in detail. During the growth of iron silicide crystal structure significant diffusion of the substrate atoms into the forming BCC core occurs, this intensifies with the substrate temperature increase, and the ratio of substrate atoms inside the Fe3Si phase reaches nearly 12%. The BCC structure formation is less active on the (100) surface, and at the temperatures as low as 26 °C and 300 °C the iron silicide crystal phase does not form at all. However, with the temperature increase or the deposition rate decrease, the crystal structure formation processes occur more actively in both cases of (100) and (111) surfaces. Thus, the effect of the deposition rate decrease is identical to the temperature growth. It was shown that the formation of the structured B2 phase of iron silicide in buffer layer between the film and the substrate leads to the inhibition of the mutual diffusion of iron and silicon atoms.

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Держатели документа:
Skolkovo Institute of Science and Technology, 30, bld. 1 Bolshoy Boulevard, Moscow, 121205, Russian Federation
Katanov Khakas State University, 90 Lenin pr., Abakan, 655017, Russian Federation
Moscow Institute of Physics and Technology (National Research University), 9 Institutskiy per., Dolgoprudny, Moscow Region, 141701, Russian Federation
Emanuel Institute of Biochemical Physics RAS, Moscow, 199339, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 50/38 Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation
EK-MFA, Dept. of Nanostructures, Budapest, Hungary
National University of Science and Technology MISiS, 4 Leninskiy pr., Moscow, 119049, Russian Federation
Plekhanov Russian University of Economics, 36 Stremyanny per., Moscow, 199339, Russian Federation

Доп.точки доступа:
Chepkasov, I. V.; Baidyshev, V. S.; Sukhanova, E. V.; Visotin, M. A.; Высотин, Максим Александрович; Sule, P.; Popov, Z. I.
}
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15.

    Zobov, V. E.
    Associative memory on qutrits by means of quantum annealing / V. Zobov, I. Pichkovskiy // Quantum Inf. Process. - 2020. - Vol. 19, Is. 9. - Ст. 342, DOI 10.1007/s11128-020-02851-x. - Cited References: 23 . - ISSN 1570-0755. - ISSN 1573-1332
   Перевод заглавия: Ассоциативная память на кутритах посредством квантового отжига
Кл.слова (ненормированные):
Quantum adiabatic algorithm -- Quantum annealing -- Qubit -- Qutrit -- Associative memory -- Memory capacity
Аннотация: When associative memory is implemented on the well-studied Hopfield network, patterns are recorded in the interaction constants between binary neurons. These constants are chosen so that each pattern should have its own minimum energy of the system described by the Ising model. In the quantum version of the Hopfield network, it was proposed to recall such states by the adiabatic change of the Hamiltonian in time. Qubits, quantum elements with two states, for example, spins with S=1/2 were considered as neurons. In this paper, for the first time, we study the function of associative memory using three-level quantum elements-qutrits, represented by spins with S=1. We record patterns with the help of projection operators. This choice is due to the need to operate with a state with a zero spin projection, whose interaction with the magnetic field vanishes. We recall the state corresponding to one of the patterns recorded in the memory, or superposition of such states by means of quantum annealing. To equalize the probabilities of finding the system in different states of superposition, an auxiliary Hamiltonian is proposed, which is turned off at the end of evolution. Simulations were performed on two and three qutrits and an increase in the memory capacity after replacing qubits with qutrits was shown.

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Держатели документа:
RAS, Fed Res Ctr, Kirensky Inst Phys, KSC,SB, Akademgorodok 50,Bld 38, Krasnoyarsk, Russia.

Доп.точки доступа:
Pichkovskiy, I. S.; Пичковский, Иван Сергеевич; Зобов, Владимир Евгеньевич
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16.

Amorphous and Crystalline Nickel Oxide Films Obtained by the Extraction-Pyrolysis Method for Electrochromic Cells / A. L. Belousov, T. N. Patrusheva, A. A. Karacharov [et al.] // Theor. Found. Chem. Eng. - 2020. - Vol. 54, Is. 4. - P. 699-705, DOI 10.1134/S0040579520040041. - Cited References: 8. - This work was performed as part of the program "Research and Development for the Priority Areas of the Russian Science-and-Technology Sector for 2014-2020"; Grant Agreement no. 075-15-2019-1843; the Project Unique Identifier RFMEFI60719X0307 . - ISSN 0040-5795. - ISSN 1608-3431

РУБ Engineering, Chemical
Рубрики:
NIO THIN-FILMS
Кл.слова (ненормированные):
nickel extract -- extraction-pyrolysis technology -- thin film -- annealing -- electrochromic cell
Аннотация: This paper reports studies of thin films of nickel oxide obtained by the extraction–pyrolysis method on glass and quartz substrates at temperatures of 380–600°C. The films have been characterized by atomic force microscopy and X-ray diffraction. It is shown that amorphous and crystalline nickel oxide films are formed on the glass. The grain size depends on the annealing temperature, while increased annealing temperatures lead to recrystallization and a decrease in the grain size in NiO films from 130 to 35 nm.

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Публикация на русском языке Пленки аморфного и кристаллического оксида никеля, полученные экстракционно-пиролитическим методом для электрохромных ячеек [Текст] / А. Л. Белоусов [и др.] // Хим. технол. - 2019. - Т. 20 № 5. - С. 215-221

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Baltic State Tech Univ VOENMEX, St Petersburg 190005, Russia.
Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660036, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia.

Доп.точки доступа:
Belousov, A. L.; Patrusheva, T. N.; Karacharov, A. A.; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Kirik, S. D.; Khol'kin, A. I.; program "Research and Development for the Priority Areas of the Russian Science-and-Technology Sector for 2014-2020" [075-15-2019-1843]; [RFMEFI60719X0307]
}
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17.

Modeling of quantum annealing in the ternary system: the factorization of the number 551 / scientific supervisor V. E. Zobov ; language advisor I. V. Alekseenko // Соврем. проблемы радиоэлектроники : сб. науч. трудов : электронное издание / ред. А. И. Громыко. - Красноярск : СФУ, 2018. - С. 496-499. - Библиогр.: 6 . - ISBN 978-5-7638-3902-9
Аннотация: In this paper we present the decision of one of the most hard combination problem with qutrit, factorization number. We present two factors that form this number. Knowing the length of one of them, the problem is simplified and can be resolved. Our work solves the problem of factorization of number 551 with the length of multiplier, which equals 4.

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Сибирский федеральный университет, Институт инженерной физики и радиоэлектроники
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Громыко, А. И. \ред.\; Pichkovskiy, I. S.; Zobov, V. E.; Зобов, Владимир Евгеньевич; Alekseenko, I. V.; "Современные проблемы радиоэлектроники", всероссийская научно-техническая конференция, посвященная 123-й годовщине Дня радио(21 ; 2018 ; май ; 3-4 ; Красноярск); Сибирский федеральный университет
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18.

    Solid-state synthesis, dewetting, and magnetic and structural characterization of interfacial FexSn1−x layers in Sn/Fe(001) thin films / V. G. Myagkov, V. S. Zhigalov, L. E. Bykova [et al.] // J. Mater. Res. - 2021. - Vol. 36, Is. 15. - P. 3121-3133, DOI 10.1557/s43578-021-00312-4. - Cited References: 43. - This work was supported by the Russian Foundation for Basic Research together with the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund of Science (Grant #19-43-240003). The work is partially based upon the experiments performed on Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS» . - ISSN 0884-2914
   Перевод заглавия: Твердотельный синтез, смачивание, магнитные и структурные характеристики межфазных слоев FexSn1−x в тонких пленках Sn/Fe(001)
Кл.слова (ненормированные):
Alloy -- Thin film -- Annealing -- Surface reaction -- Phase equilibria -- Magnetic properties
Аннотация: The phase formation sequences in 9Sn/91Fe(001) and 25Sn/75Fe(001) bilayers during thin-film solid-state reactions up to 800°C were investigated using X-ray diffraction, the torque method, and scanning electron microscopy. In both samples, FeSn2, FeSn, α-Fe1−xSnx, Fe5Sn3, α-Fe, and β-Sn were sequentially formed at the initiation temperatures Tini ~ 150°C, ~ 300°C, ~ 550°C, ~ 600°C, and ~ 700°C, respectively. Low-temperature transformations were predicted at temperatures TK1 ~ 150°C and TK2 ~ 300°C, which are absent in the phase equilibrium diagram of the Fe–Sn system. Solid-state dewetting of the 9Sn/91Fe(001) and 25Sn/75Fe(001) bilayers started at temperatures above 550°C. Overall, this work sheds new light on general chemical mechanisms governing the synthesis of intermetallic phases in Sn/Fe(001) thin films, the phase transformations, and the evolution of the dewetting process of FexSn1−x films.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, Krasnoyarsk, 660036, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, 50/24 Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Federal Research Center Krasnoyarsk Science Center, Siberian Branch of the Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Solovyov, L. A.; Matsynin, A. A.; Мацынин, Алексей Александрович; Balashov, Yu. Yu.; Балашов, Юрий Юрьевич; Nemtsev, I. V.; Немцев, Иван Васильевич; Shabanov, A. V.; Шабанов, Александр Васильевич; Bondarenko, G. N.
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19.

    Zobov, V. E.
    Sequences of selective rotation operators for three group clustering on qutrits by means quantum annealing / V. E. Zobov, I. S. Pichkovskiy // Proceedings of the International Conference "Micro- and Nanoelectronics – 2021". ICMNE – 2021. - 2021. - Ст. q3-02. - P. 149. - Cited References: 4
   Перевод заглавия: Последовательности селективных операторов поворотов для кластеризации на три группы на кутритах посредством квантового отжига

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Доп.точки доступа:
Pichkovskiy, I. S.; Зобов, Владимир Евгеньевич; "Micro- and Nano-Electronics", International Conference(2021 ; Oct. ; Zvenigorod); "Микро- и наноэлектроника", международная конференция(2021 ; окт. ; Звенигород)Квантовая информатика, симпозиум(2021 ; окт. ; Звенигород); Российская академия наук; Физико-технологический институт имени К.А. Валиева РАН
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20.

    Zobov, V. E.
    Clustering by quantum annealing on the three-level quantum elements qutrits / V. E. Zobov, I. S. Pichkovskiy // Quantum Inf. Process. - 2022. - Vol. 21, Is. 4. - Ст. 144, DOI 10.1007/s11128-022-03482-0. - Cited References: 28. - This study was supported by the Theoretical Physics and Mathematics Advancement Foundation “BASIS” #20-1-5-41-1. We are grateful for their trust and assistance in research . - ISSN 1570-0755
   Перевод заглавия: Кластеризация посредством квантового отжига на квантовых трёхуровневых элементах кутритах
Кл.слова (ненормированные):
Quantum adiabatic algorithm -- Quantum annealing -- Qutrit -- Clustering
Аннотация: Clustering is grouping of data by the proximity of some properties. We report on the possibility of increasing the efficiency of clustering of points in a plane using artificial quantum neural networks after the replacement of the two-level neurons called qubits represented by the spins S = 1/2 by the three-level neurons called qutrits represented by the spins S = 1. The problem has been solved by the slow adiabatic change of the Hamiltonian in time. The methods for controlling a qutrit system using projection operators have been developed and the numerical simulation has been performed. The Hamiltonians for two well-known clustering methods, one-hot encoding and k-means, have been built. The first method has been used to partition a set of six points into three or two clusters and the second method, to partition a set of nine points into three clusters and seven points into four clusters. The simulation has shown that the clustering problem can be effectively solved on qutrits represented by the spins S = 1. The advantages of clustering on qutrits over that on qubits have been demonstrated. In particular, the number of qutrits required to represent N data points is smaller than the number of qubits by a factor of log 2N/ log 3N. For qutrits, the simplest is to partition the data points into three clusters rather than two ones. At the data partition into more than three clusters, it has been proposed to number the clusters by the numbers of states of the corresponding multi-spin subsystems, instead of using the numbers of individual spins. This reduces even more the number of qutrits (Nlog 3K instead of NK) required to implement the algorithm.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Pichkovskiy, I. S.; Пичковский, Иван Сергеевич; Зобов, Владимир Евгеньевич
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