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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Зобов, Владимир Евгеньевич, Пичковский И. С.
Заглавие : Последовательности селективных операторов поворотов для создания взаимодействий для квантового отжига на трех кутритах
Место публикации : Сибир. физич. журнал. - 2019. - Т. 14, № 1. - С. 5–16. - ISSN 2541-9447, DOI 10.25205/2541-9447-2019-14-1-5-16; Siberian J. Phys.
Примечания : Библиогр.: 23
Предметные рубрики: Теоретическая и математическая физика
Аннотация: Выполнено моделирование факторизации числа 15 на трех кутритах, представленных спинами S = 1, посредством квантового отжига. Предполагается, что сильное односпиновое взаимодействие позволяет селективно влиять на разные переходы между уровнями каждого из трех кутритов. Подобраны последовательности селективных операторов поворотов для создания из диполь-дипольного взаимодействия изменяющегося во времени эффективного гамильтониана, необходимого для решения задачи. Найдена зависимость точности от параметров магнитного поля, полного времени отжига и длительности временных шагов при замене непрерывного изменения гамильтониана на дискретное.We have done simulating of factorization the number 15 on three qutrits S = 1 by quantum annealing. We assume that strong one-spin interaction allow selectively operate on different transitions between levels of the each qutrit. We present a sequence of selective rotation operators to engineer from dipole-dipole interaction a time-dependent effective Hamiltonian necessary for solving the problem. Also we find dependence of fidelity versus various parameters: magnetic field, total annealing time, and duration of time step, when the continuous variation of the Hamiltonian is replaced by a discrete one.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Белоусов А.Л., Патрушева Т.Н., Карачаров А.А., Иваненко, Александр Анатольевич, Кирик С.Д., Холькин А.И.
Заглавие : Пленки аморфного и кристаллического оксида никеля, полученные экстракционно-пиролитическим методом для электрохромных ячеек
Место публикации : Хим. технол. - 2019. - Т. 20, № 5. - С. 215-221. - ISSN 1684-5811, DOI 10.31044/1684-5811-2019-20-5-215-221
Примечания : Библиогр.: 8
Аннотация: Представлены исследования тонких пленок оксида никеля, полученных экстракционно-пиролитическим методом на стеклянных и кварцевых подложках при температурах 380-600 °С. Пленки охарактеризованы методами атомно-силовой микроскопии и рентгеновской дифракции. Показано, что на стекле формируются аморфные, а на кварце - кристаллические пленки оксида никеля. Размер зерна в пленках зависит от температуры отжига, при этом повышенные температуры отжига приводят к рекристаллизации и снижению размера зерна в пленках NiO от 130 до 35 нм.Study results of thin films of nickel oxide, produced by the extraction-pyrolitic method on glass and quartz substrates at temperatures 380-600 °С are presented. The film characteristics were obtained by the methods of atomic-force microscopy and X-ray diffraction. It has been found out that amorphous films are formed on glass and crystalline ones of nickel oxide are formed on quartz. Grain dimensions in the films depend on annealing temperature.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Мацынин, Алексей Александрович, Комогорцев, Сергей Викторович, Быкова, Людмила Евгеньевна, Еремин, Леонид Аркадьевич
Заглавие : Исследование фазовых превращений в тонкопленочных структурах Sn/Co при вакуумном отжиге
Коллективы : Байкальская международная конференция "Магнитные материалы. Новые технологии", "Магнитные материалы. Новые технологии", Байкальская международная конференция, "Magnetic materials. New tecnologies", Baikal International Conference, Иркутский государственный университет
Место публикации : Магнитные материалы. Новые технологии: тез. докл. IX Байкал. междунар. конф. BICMM-2023/ чл. прогр. ком.: S. S. Aplesnin [et al.] ; чл. орг. ком. R. S. Iskhakov [et al.]. - Иркутск, 2023. - С. 125-126. - ISBN 978-5-9624-2178-0, DOI 10.26516/978-5-9624-2178-0.2023.1-207
Примечания : Библиогр.: 3
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Badía-Romano L., Rubín J., Magén C., Bartolomé F., Sesé J., Ibarra M.R., Bartolomé J., Hierro-Rodriguez A., Martín J.I., Alameda J.M., Bürgler D.E., Varnakov S. N., Komogortsev S. V., Ovchinnikov S. G.
Заглавие : Thermomagnetic behaviour and compositional irreversibility on (Fe/Si)3 multilayer films
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2014. - Vol. 364. - P.24-33. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.04.029. - ISSN 1873-4766
Примечания : Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza.
Предметные рубрики: SPUTTERED FE/SI SUPERLATTICES
INTERLAYER EXCHANGE
GIANT MAGNETORESISTANCE
MAGNETIC-PROPERTIES
SILICIDE FORMATION
EPITAXIAL-GROWTH
ROOM-TEMPERATURE
IRON DISILICIDE
TRILAYER FILMS
THIN-FILMS
Ключевые слова (''Своб.индексиров.''): fe-si multilayer--chemical transformation--fe silicide--interlayer exchange coupling--magnetic domain--in situ annealing
Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5T800K). Films were prepared by thermal evaporation under ultrahigh vacuum onto a buffer layer of Fe/Ag deposited on a GaAs(001) substrate. Transmission electron microscopy reveals good epitaxial growth and phase transformations in the c-FeSi phase formed during deposition as well as upon subsequent annealing of the sample up to 800 K. Remanence to saturation magnetization MR/MS ratios and saturation fields are related to several types of interlayer exchange coupling. 90°-coupling and a superposition of 90° and antiferromagnetic interlayer exchange coupling are found depending on the Fe layer thickness. Magnetization curves were investigated as a function of temperature by in situ annealing. They show an irreversible thermal process as temperature increases from 300 to 450 K that is correlated to the formation of a ferromagnetic silicide phase. At higher temperature this phase transforms into a paramagnetic Fe–Si phase.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volochaev M. N., Tarasov I. A., Loginov Yu. Yu., Cherkov A. G., Kovalev I. V.
Заглавие : The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing
Коллективы : International Conference on Films and Coatings
Место публикации : J. Phys. Conf. Ser.: IOP, 2017. - Vol. 857, Is. 1. - Ст.012053. - ISSN 17426588 (ISSN), DOI 10.1088/1742-6596/857/1/012053
Примечания : Cited References: 10
Ключевые слова (''Своб.индексиров.''): coatings--high resolution transmission electron microscopy--molecular beam epitaxy--silicon--transmission electron microscopy--phase formations--polycrystalline--polycrystalline film--si(111) substrate--vacuum-annealing--annealing
Аннотация: The regularities of phase formation and thermal stability in Fe3Si(111)/Si(111) structure at stepped vacuum annealing (350, 450 and 550 °C) were investigated. The layer of 32 nm Fe3Si was deposited onto Si(111) substrate by molecular beam epitaxy at 260 °C. Transmission electron microscopy (TEM) measurements demonstrated that the film thickness increases by ∼19 % at 350 °C annealing without changing the phase composition. The polycrystalline -FeSi sublayer was formed on the interface at 450 °C annealing. Further annealing at 550 °C led to the ∼ 80 nm polycrystalline film formation containing the crystallites of -FeSi, Fe5Si3, and β-FeSi2 phases.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Yaroslavtsev R. N., Chekanova L. A., Iskhakov R. S.
Заглавие : The processes occurring at low temperature annealing in multilayer film structures of Co/Pd
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Third Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2015): proceedings. - Vladivostok: Dalnauka, 2015. - Ст.VIII.21.09p. - P.294-295. - ISBN 978-5-8044-1556-4
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Eremin L. A., Matsynin A. A., Balashov Yu. Yu., Myagkov V. G., Zhigalov V. S., Bykova L. E., Komogortsev S. V.
Заглавие : The phases formed in Sn/Co thin bilayer upon heating
Колич.характеристики :5 с
Место публикации : J. Solid State Chem. - 2024. - Vol. 334. - Ст.124693. - ISSN 00224596 (ISSN), DOI 10.1016/j.jssc.2024.124693. - ISSN 1095726X (eISSN)
Примечания : Cited References: 33
Аннотация: The structure and phases formed in Sn/Co thin films are interesting both from the solid-state chemistry point of view and due to applications of such a metallic bilayer. The phases forming in thin films Sn/Co obtained by thermal vacuum evaporation on two different substrates SiO2 and MgO(100) at different annealing temperatures have been studied. Annealing above 110°С results in intermetallics formation in the films. The hcp-cobalt is grown in the films on SiO2 substrate, and the fcc-Co is observed on MgO(100) substrate. It is found that the stable α-Co3Sn2 intermetallic is formed at higher annealing temperature in film on MgO(100) substrate. We show that transformations related to mass transfer in the Sn/Co bilayers were up to 500°С and were finished upon reaching the thermodynamically equilibrium phase composition at this temperature.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bunina O. A., Kuprina Yu. A., Lutokhin A. G., Raevskaya S. I., Titov V. V., Orlov S. V., Malitskaya M. A., Gorev M. V., Gorev M. V., Bondarev V. S., Raevski I. P.
Заглавие : The effect of annealing on the structure and phase transitions of Na0.95Li0.05NbO3
Коллективы : International Seminar on Ferroelastic Physics, Международный семинар по физике сегнетоэластиков, Российская академия наук, Воронежский государственный технический университет
Место публикации : Ninth international seminar on ferroelastic physics (ISFP-9): book of abstracts/ org. com. I. N. Flerov [et al.] ; progr. com. V. I. Zinenko [et al.]. - 2018. - P.26
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lukyanenko A. V., Tarasov A. S., Shanidze L. V., Yakovlev I. A., Zelenov F. V., Masugin A. N., Ivanov A. B., Baron F. A., Volkov N. V.
Заглавие : Synthesis and transport properties of FET based on Heusler alloy thin films formed by rapid thermal annealing
Коллективы : International School and Conference on optoelectronics, photonics, engineering and nanostructures
Место публикации : J. Phys.: Conf. Ser. - 2019. - Vol. 1410. - Ст.012017. - ISSN 1742-6588, DOI 10.1088/1742-6596/1410/1/012017. - ISSN 1742-6596 (eISSN)
Примечания : Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 17-02-00302 and supported in part by the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences, project II.8.70, and the Presidium of the Russian Academy of Sciences, Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies».
Аннотация: In this work we show a preparation technique of Co2FeSi full-Heusler alloy thin films on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The films of the Co2FeSi alloy were formed by a silicidation reaction, caused by RTA, between the ultrathin SOI (001) layer and the Fe/Co layers deposited on it. It is assumed that this technology is compatible with the process of formation of a half-metal source-drain in an advanced CMOS and SOI technology and will be applicable for the manufacture of a source-drain of a field-effect transistor. Schottky barrier field-effect transistors (FET) with a back-gate, based on silicon nanowires with source and drain of a Co2FeSi film, synthesized on an SOI substrate, were manufactured. The transport properties of the device were investigated.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Bykova L. E., Zhigalov V. S., Kokh D., Mikhlin Y. L., Matsynin A. A., Bondarenko G. N.
Заглавие : Solid-state synthesis, structural and magnetic characterization of ferromagnetic phases in 24Ga/76Fe(0 0 1), 40Ga/60Fe(0 0 1) and 60Ga/40Fe(0 0 1) bilayers
Место публикации : J. Magn. Magn. Mater. - 2022. - Vol. 561. - Ст.169709. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2022.169709
Примечания : Cited References: 77. - The work is partially based upon the experiments performed on Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS»
Аннотация: The A2, B2, D03 phases and dispersive nanoprecipitates play key roles in the nature of super-functional properties, such as the large and sensitive magnetostriction, in Fe100-xGax alloys. However, the temperature conditions for the occurrence of the chemical interaction between Fe and Ga, leading to the synthesis of these phases and nanoprecipitates, remain completely unexplored. Herein we first report results of the start of the chemical interaction at the Ga/Fe(0 0 1) interface and the structural and magnetic phase transformations in 24Ga/76Fe(0 0 1), 40Ga/60Fe(0 0 1) and 60Ga/40Fe(0 0 1) bilayers from room temperature to 800 °C. For all bilayers the magnetic ordered D03 phase is the first phase which is formed at the Ga/Fe(0 0 1) interface at ∼ 375 °C. When the annealing temperature is increased above 580 °C in 24Ga/76Fe(0 0 1) samples the epitaxial D03(0 0 1) layer begins to develop into the epitaxial magnetic ordered B2(0 0 1) layer, which remains after annealing to 800 °C. In 40Ga/60Fe(0 0 1) samples the epitaxial D03(0 0 1) layer evolves into the epitaxial B2(0 0 1) layer and a new epitaxial layer with interplanar spacing 0.1484 nm (L60ʹ), which has close reflections with L60 nanoprecipitates. The L60ʹ phase exhibits unique magnetic properties, including a large magnetic fourfold anisotropy constant of ∼ 7·105 erg/cm3 and 8-fold anisotropy. The solid-state reactions in 60Ga/40Fe(0 0 1) samples start with the synthesis of D03 nanograins embedded in amorphous phases, whose peaks are centered on D03(0 0 4) and Fe(0 0 2) reflections. Above 700 °C the amorphous phases partially crystallize and the epitaxial magnetic L60ʹ and ordered B2(0 0 1) phases emerge. Dewetting and unidentified secondary precipitations are observed in all samples and their influence on the magnetic properties is discussed. Our results demonstrate not only the complex nature of initial stage Fe100-xGax alloy synthesis, but also predict the low-temperature transformation at ∼ 375 °C in the Fe - Ga phase diagram.
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Solovyov L. A., Matsynin A. A., Balashov Yu. Yu., Nemtsev I. V., Shabanov A. V., Bondarenko G. N.
Заглавие : Solid-state synthesis, dewetting, and magnetic and structural characterization of interfacial FexSn1−x layers in Sn/Fe(001) thin films
Место публикации : J. Mater. Res. - 2021. - Vol. 36, Is. 15. - P.3121-3133. - ISSN 08842914 (ISSN), DOI 10.1557/s43578-021-00312-4
Примечания : Cited References: 43. - This work was supported by the Russian Foundation for Basic Research together with the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund of Science (Grant #19-43-240003). The work is partially based upon the experiments performed on Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS»
Аннотация: The phase formation sequences in 9Sn/91Fe(001) and 25Sn/75Fe(001) bilayers during thin-film solid-state reactions up to 800°C were investigated using X-ray diffraction, the torque method, and scanning electron microscopy. In both samples, FeSn2, FeSn, α-Fe1−xSnx, Fe5Sn3, α-Fe, and β-Sn were sequentially formed at the initiation temperatures Tini ~ 150°C, ~ 300°C, ~ 550°C, ~ 600°C, and ~ 700°C, respectively. Low-temperature transformations were predicted at temperatures TK1 ~ 150°C and TK2 ~ 300°C, which are absent in the phase equilibrium diagram of the Fe–Sn system. Solid-state dewetting of the 9Sn/91Fe(001) and 25Sn/75Fe(001) bilayers started at temperatures above 550°C. Overall, this work sheds new light on general chemical mechanisms governing the synthesis of intermetallic phases in Sn/Fe(001) thin films, the phase transformations, and the evolution of the dewetting process of FexSn1−x films.
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12.

Вид документа : Статья из сборника (выпуск монографической серии)
Шифр издания :
Автор(ы) : Zobov V. E., Pichkovskiy I. S.
Заглавие : Sequences of selective rotation operators to engineer interactions for quantum annealing on three qutrits
Коллективы : International Conference on Micro- and Nano-Electronics
Место публикации : Proc. SPIE. - 2019. - Vol. 11022: International Conference on Micro- and Nano-Electronics 2018. - Ст.UNSP 110222V. - , DOI 10.1117/12.2521253
Примечания : Cited References: 21
Предметные рубрики: ALGORITHM
Аннотация: We have done simulating of factorization the number 15 on three qutrits, represented by the spins S = 1, by quantum annealing. We assume that strong one-spin interaction allow selectively operate on different transitions between levels of the each qutrit. We present a sequence of selective rotation operators to engineer from dipole-dipole interaction a time-dependent effective Hamiltonian necessary for solving the problem. Also we find dependence of fidelity versus different parameters: magnetic field, total annealing time, and duration of time step, when the continuous variation of the Hamiltonian is replaced by a discrete one.
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13.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Zobov V. E., Pichkovskiy I. S.
Заглавие : Sequences of selective rotation operators for three group clustering on qutrits by means quantum annealing
Коллективы : "Micro- and Nano-Electronics", International Conference, "Микро- и наноэлектроника", международная конференция, Квантовая информатика, симпозиум, Российская академия наук, Физико-технологический институт имени К.А. Валиева РАН
Разночтения заглавия :Загл. обл.: IС "Micro- and Nanoelectronics" (ICMNE-2021) with the extended session “Quantum Informatics” (QI-2021)
Место публикации : Proceedings of the International Conference "Micro- and Nanoelectronics – 2021". ICMNE – 2021. - 2021. - Ст.q3-02. - P.149
Примечания : Cited References: 4
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14.

Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Zobov V. E., Pichkovskiy I. S.
Заглавие : Sequences of selective rotation operators for three group clustering on qutrits by means of quantum annealing
Коллективы : International Conference on Micro- and Nano-Electronics
Место публикации : Proc. SPIE. - 2022. - Vol. 12157. - Ст.121571Z. - , DOI 10.1117/12.2622732
Примечания : Cited References: 25. - This work was supported by a grant from the Fund for the Development of Theoretical Physics and Mathematics "Basis" # 20-1-5-41-1
Аннотация: Recently, it was demonstrated that the clustering considered in this articlec, which consists in partitioning a set of data points into subsets depending on the proximity of some properties, can be performed using quantum annealing on a system of two-level quantum elements - qubits. In previous work, we proposed to pass from qubits to qutrits - three-level quantum elements showed the advantages of such a replacement and obtained a time-dependent effective Hamiltonian. In the present paper, we have found a sequence of selective rotation operators that allows one to realize adiabatic evolution with this effective Hamiltonian in the discrete-time approximation. On five qutrits, represented by spins S = 1, we performed a simulation of clustering a set of six points on a plane into three groups by means of quantum annealing.
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15.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Pichkovskiy I. S., Zobov V. E., Alekseenko I. V.
Заглавие : Modeling of quantum annealing in the ternary system: the factorization of the number 551
Коллективы : "Современные проблемы радиоэлектроники", всероссийская научно-техническая конференция, посвященная 123-й годовщине Дня радио, Сибирский федеральный университет
Место публикации : Соврем. проблемы радиоэлектроники: сб. науч. трудов : электронное издание/ ред. А. И. Громыко. - Красноярск: СФУ, 2018. - С. 496-499. - ISBN 978-5-7638-3902-9
Примечания : Библиогр.: 6
Аннотация: In this paper we present the decision of one of the most hard combination problem with qutrit, factorization number. We present two factors that form this number. Knowing the length of one of them, the problem is simplified and can be resolved. Our work solves the problem of factorization of number 551 with the length of multiplier, which equals 4.
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16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Gudim I. A., Eremin E. V., Kuchesheva-Titova V. R.
Заглавие : Magnetic properties of twin trigonal oxiborate with huntite structure. effect of annealing
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 2, Sect. K: Magnetic semiconductors, multiferroics, topological insulators. - Ст.K.P7. - P.320-321. - ISBN 978-5-94469-051-7
Примечания : Cited References: 7. - The work on this study was supported by the Russian Science Foundation No. 22-12-20019
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17.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Lukyanenko A. V., Tarasov A. S., Tarasov I. A., Rauckii M.V., Yakovlev I. A., Kosyrev N. N., Komarov V. A., Shanidze L. V., Varnakov S. N., Ovchinnikov S. G., Patrin G. S., Volkov N. V.
Заглавие : Magnetic properties of mn-doped Fe3+xSi1–x films synthesized on soi substrate by low temperature annealing
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 2, Sect. J: Soft and hard magnetic materials. - Ст.J.P24. - P.248-249. - ISBN 978-5-94469-051-7
Примечания : Cited References: 6. - The research was funded by Krasnoyarsk Regional Fund of Science
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18.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Komogortsev S. V., Chizhik N. A., Filatov E. Yu., Korenev S. V., Shubin Yu.V., Velikanov D. A., Iskhakov R. S., Yurkin G.Yu.
Заглавие : Magnetic properties and L1 0 phase formation in CoPt nanoparticles
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.159-162. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.159. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hard magnetic--magnetic anisotropy--magnetic nanoparticles--remnant magnetization--annealing time--copt nanoparticles--disorder-order--domain formation--hard magnetic--magnetic anisotropy energy--magnetic nanoparticles--phase formations--remnant magnetization--decomposition--magnetic anisotropy--magnetic materials--remanence--nanoparticles
Аннотация: The effect of the atomic disorder-order transformation on remanence, coercivity and magnetic anisotropy energy in CoPt nanoparticles prepared by thermal decomposition and annealed at 400oC for 4 and 16 hours has been studied. The observed remanence and magnetic anisotropy energy enhancement versus annealing time are discussed in the terms of ordering domain formation inside nanoparticles. В© (2012) Trans Tech Publications.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chepkasov I. V., Baidyshev V. S., Sukhanova E. V., Visotin M. A., Sule P., Popov Z. I.
Заглавие : Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing
Место публикации : Appl. Surf. Sci. - 2020. - Vol. 527. - Ст.146736. - ISSN 01694332 (ISSN), DOI 10.1016/j.apsusc.2020.146736
Примечания : Cited References: 67. - We thank Dr. Ivan Tarasov for fruitful discussions. The research is carried out using the equipment of the shared research facilities of HPC computing resources at Lomonosov Moscow State University and resources of the Center for the Information and Computing of Novosibirsk State University. The molecular dynamics study of sputtering and annealing iron silicides was supported by the Russian Science Foundation, project no. 16-13-00060-П. All quantum-chemical calculations were supported by Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (No. K2-2020-009)
Аннотация: The iron silicides formation during epitaxial film grown process on the (100) and (111) silicon surfaces were investigated using molecular dynamics (MD). The iron and silicon atom deposition rate and silicon substrate temperature influence on the formed iron silicide structure and stoichiometric composition were studied in detail. During the growth of iron silicide crystal structure significant diffusion of the substrate atoms into the forming BCC core occurs, this intensifies with the substrate temperature increase, and the ratio of substrate atoms inside the Fe3Si phase reaches nearly 12%. The BCC structure formation is less active on the (100) surface, and at the temperatures as low as 26 °C and 300 °C the iron silicide crystal phase does not form at all. However, with the temperature increase or the deposition rate decrease, the crystal structure formation processes occur more actively in both cases of (100) and (111) surfaces. Thus, the effect of the deposition rate decrease is identical to the temperature growth. It was shown that the formation of the structured B2 phase of iron silicide in buffer layer between the film and the substrate leads to the inhibition of the mutual diffusion of iron and silicon atoms.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
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