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Andreev reflections and experimental current-voltage characteristics of break junctions of polycrystalline HTSC / M. I. Petrov [et al.] // Physica C. - 2004. - Vol. 408: 7th International Conference on Materials and Mechanisms of Superconductive and High Temperature Superconductors (MAY 25-30, 2003, Rio de Janeiro, BRAZIL). - P. 620-622, DOI 10.1016/j.physc.2004.03.085. - Cited References: 3 . - ISSN 0921-4534

РУБ Physics, Applied

Кл.слова (ненормированные):
Andreev reflections -- break junction -- current-voltage characteristics -- Andreev reflections -- Break junction -- Current-voltage characteristics -- Andreev reflections -- Break junctions -- Elastic scattering -- Lattice defects -- Negative differential resistance -- Electric fields -- Heuristic methods -- Hysteresis -- Microcracks -- Polycrystalline materials -- Probability density function -- Quasicrystals -- Superconducting materials -- Yttrium barium copper oxides -- Current voltage characteristics
Аннотация: The temperature evolution of current-voltage characteristics (CVCs) of break junctions made from polycrystalline Y0.75Lu0.25Ba2Cu3O7 and La1.85Sr0.15CuO4 is investigated. The experimental CVCs have hysteretic features that reflect a part of a curve with negative differential resistance. The temperature evolution of the CVCs is discussed within the framework of the Kummel-Gunsenheimer-Nicolsky theory for superconductor/normal-metal/superconductor junctions considering multiple Andreev reflections. It is shown that the shape of the CVCs of break junctions is determined by the ratio of the number of "short" and "long" intergrain normal regions in the polycrystalline HTSC under investigation. (C) 2004 Elsevier B.V. All rights reserved.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany
ИФ СО РАН
Kirensky Intitute of Physics, Akademgorodok, 660036 Krasnoyarsk, Russian Federation
Reshetnev Siberian Stt. Aerosp. U., 660014 Krasnoyarsk, Russian Federation
Inst. fur Theor. Phys./Astrophys., Universitat Wurzburg, D-97074 Wurzburg, Germany

Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaihutdinov, K. A.; Kummel, R.
}
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    Angular tuning of defect modes spectrum in the one-dimensional photonic crystal with liquid-crystal layer / V. G. Arkhipkin [et al.] // Eur. Phys. J. E. - 2007. - Vol. 24, Is. 3. - P297-302, DOI 10.1140/epje/i2007-10239-7. - Cited Reference Count: 28 . - NOV. - ISSN 1292-8941
Рубрики:
PERIODIC STRUCTURE
   REFRACTIVE-INDEX
   ENHANCEMENT
   LIGHT
   LASER
Кл.слова (ненормированные):
42.25.Bs Wave propagation, transmission and absorption -- 42.70.Df Liquid crystals -- 42.70.Qs Photonic bandgap materials -- Angles of incidence -- Angular tuning -- Defect modes -- Electric polarization -- Photonic bandgap materials -- Radiation losses -- Absorption -- Defects -- Light polarization -- Liquid crystals -- One dimensional -- Phase shift -- Wave propagation -- Photonic crystals
Аннотация: A one-dimensional ZrO2/SiO2 photonic crystal with a 4-n -pentyl-4'-cyanobiphenyl (5CB) nematic defect layer was used to investigate the transmission spectra of light polarized parallel and perpendicular to the liquid-crystal director at different angles of incidence. The spectra of the photonic crystal were shown to split into four polarized components T-ij at oblique incidence. When the incident angle increased, the bandgap edges and the defect modes shifted towards short wavelengths, while the amplitudes of the defect modes increased for the transverse magnetic polarization and decreased for the transverse electric polarization. The observed discrepancy between the defect mode amplitudes in the center and near the edges of the photonic bandgap was found to be related to the radiation losses inside the defect layer of a non-ideal photonic crystal. The simulated transmission spectra obtained using recurrence relations and taking into account the decay of defect modes are in good agreement with the experimental data.

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Держатели документа:
SB RAS, LV Kirensky Phys Inst, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Shabanov, V. F.; Шабанов, Василий Филиппович
}
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Arkhipkin, V. G.
Effect of electromagnatically induced transparency on spectrum of defect modes of photonic crystal - art. no. 67292H / V. G. Arkhipkin, S. A. Myslivets, I. V. Timofeev ; ed.: VN Belyi, KN Drabovich, KN Drabovich ; International Conference on Coherent and Nonlinear Optics (2007) // ICONO 2007: Coherent and nonlinear optical phenomena. Ser. proceedings of the society of photo-optical instrumentation engineers (SPIE) / International Conference on Coherent and Nonlinear Optics (2007) : SPIE-Int. Soc. Optical Engineering, 2007. - Vol. 6729. - P. H7292-H7292, DOI 10.1117/12.751966. - Cited References: 33 . - ISBN 0277-786X. - ISBN 978-0-8194-6886-4

РУБ Optics
Рубрики:
ELECTROMAGNETICALLY INDUCED TRANSPARENCY
   NONLINEAR OPTICS
   COHERENT MEDIA
   LIGHT
   MICROCAVITIES
   PULSES
Кл.слова (ненормированные):
photonic crystal -- defect mode -- photonic band gap -- localized mode -- electromagnetically induced transparency -- Defect mode -- Electromagnetically induced transparency -- Localized mode -- Photonic band gap -- Photonic crystal -- Crystal defects -- Dispersion (waves) -- Electromagnetic field effects -- Transparency -- Photonic crystals
Аннотация: The effect of electromagnetically induced transparency on the spectrum of defect modes of one-dimensional photonic crystal is discussed theoretically. Narrowing of defect mode linewidth is predicted due to nonabsorbing highly dispersive medium in defect layer.

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Доп.точки доступа:
Myslivets, S. A.; Мысливец, Сергей Александрович; Timofeev, I. V.; Тимофеев, Иван Владимирович; Belyi, VN \ed.\; Drabovich, K. N. \ed.\; Архипкин, Василий Григорьевич; International Conference on Coherent and Nonlinear Optics(2007)
}
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Arkhipkin, V. G.
Effect of electromagnetically induced transparency on the spectrum of defect modes in a one-dimensional photonic crystal / V. G. Arkhipkin, S. A. Myslivets // Quantum Electronics. - 2009. - Vol. 39, Is. 2. - P. 157-162, DOI 10.1070/QE2009v039n02ABEH013813 . - ISSN 1063-7818
Кл.слова (ненормированные):
Electromagnetically induced trans- parency -- Photonic crystals -- Defect layers -- Defect mode -- Electromagnetically induced trans- parency -- One dimensional photonic crystal -- Spatial in-homogeneity -- Spatial overlap -- Transmission spectrums -- Crystal atomic structure -- Defects -- Silicon on insulator technology -- Transparency -- Photonic crystals
Аннотация: We studied the transmission spectrum of a one-dimensional photonic crystal containing a defect layer in which electromagnetically induced transparency is possible. The analysis is performed taking into account the spatial inhomogeneity of interacting fields in the photonic crystal. It is found that the transmission spectrum of such a photonic crystal depends on the spatial overlap of defect modes excited by probe and control radiations. It is shown that electromagnetically induced transparency can result in a considerable narrowing of the defect mode spectrum. В© 2009 Kvantovaya Elektronika and Turpion Ltd.

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Держатели документа:
L.V. Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, Academgorodok, 660036, Krasnoyarsk, Russian Federation
Siberian Federal University, prosp. Svobodnyi 79, 660041 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Myslivets, S. A.; Мысливец, Сергей Александрович; Архипкин, Василий Григорьевич
}
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Arkhipkin, V. G.
Transmission and reflection spectra of a photonic crystal with a Raman defects / V. G. Arkhipkin, S. A. Myslivets // J. Exp. Theor. Phys. - 2011. - Vol. 111, Is. 6. - P. 898-906, DOI 10.1134/S1063776110120022. - Cited References: 37. - This work was supported by the Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project no. NSh-7810.2010.3), the Presidium of the Russian Academy of Sciences (project no. 27.1), the Ministry of Education and Science of the Russian Federation (state contract no. 02.740.11.0220), and the Siberian Branch, Russian Academy of Sciences (integration project no. 5). . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
ELECTROMAGNETICALLY INDUCED TRANSPARENCY
   SLOW-LIGHT
   NONLINEAR OPTICS
   MICROCAVITIES
   LASERS
   AMPLIFIER
   MODES
Кл.слова (ненормированные):
Group velocities -- High frequency HF -- Microwatts -- Nonlinear refractive index -- One dimensional photonic crystal -- Probe field -- Pump intensities -- Raman gain -- Raman resonances -- Reflection spectra -- Spectral position -- Three level atoms -- Transmission spectrums -- Defects -- Dispersion (waves) -- Probes -- Pumping (laser) -- Pumps -- Refractive index -- Resonance -- Photonic crystals
Аннотация: Features of Raman gain of probe radiation in three-level atoms placed in a defect of a one-dimensional photonic crystal in the presence of laser radiation (pump) at an adjacent high-frequency transition have been theoretically investigated. It has been shown that there is a pump intensity range where narrow peaks (resonances) simultaneously appear in the transmission and reflection spectra of the probe field. Beyond this region, the peak in the transmission spectrum is transformed to a narrow dip. The spectral position of these peaks is determined by the Raman resonance and the transmittance and reflectance can be larger than unity at pump intensities from several microwatts per square centimeter to several tens of milliwatts per square centimeter. The nature of narrow peaks is due to a sharp dispersion of a nonlinear refractive index near the Raman resonance; this dispersion is responsible for a strong decrease in the group velocity of probe radiation. The proposed scheme makes it possible to obtain controlled ultranarrow resonances in the transmission and reflection spectra of the photonic crystal.

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Оригинал на русском языке Спектры пропускания и отражения фотонного кристалла с рамановским дефектом [Текст] / В. Г. Архипкин, С. А. Мысливец // Журнал экспериментальной и теоретической физики. - Москва : Федеральное государственное унитарное предприятие "Академический научно-издательский, производственно-полиграфический и книгораспространительский центр Российской академии наук "Издательство "Наука", 2010. - Т. 138 № 6. - С. 1018-1027

Держатели документа:
[Arkhipkin, V. G.] Russian Acad Sci, Kirenskii Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Myslivets, S. A.; Мысливец, Сергей Александрович; Архипкин, Василий Григорьевич
}
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Avramov, P. V.
Effect of carbon network defects on the electronic structure of semiconductor single-wall carbon nanotubes / P. V. Avramov, B. I. Yakobson, G. E. Scuseria // Phys. Solid State. - 2004. - Vol. 46, Is. 6. - P. 1168-1172, DOI 10.1134/1.1767262. - Cited References: 15 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
JUNCTIONS
Аннотация: For a single-wall (14, 0) carbon nanotube, the total density of electronic states of the ideal structure and of some possible defect structures is calculated in the framework of the band theory approach using Gaussian-type orbitals and the approximation of the generalized density gradient. It is shown that allowance for defects of the atomic structure of a nanotube makes it possible to adequately describe the existing experimental data on nanotube electronic structure. In the framework of the same approach, the total density of electronic states is calculated for an intermolecular contact of (5, 5) and (10, 0) single-wall carbon nanotubes formed due to the creation of a 5-7 defect. It is shown that the electronic states related to the contact region and the 5-7 defect lie in vicinity of the Fermi level. (C) 2004 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Rice Univ, Ctr Biol & Environm Nanotechnol, Houston, TX 77005 USA
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Ctr. for Biol./Environ. Nanotechnol., Rice University, Houston, TX 77005-1892, United States

Доп.точки доступа:
Yakobson, B. I.; Scuseria, G. E.; Аврамов, Павел Вениаминович
}
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Bound States in Photonic Fabry-Perot Resonator with Nonlinear Off Channel Defects [Text] / Bulgakov E.N., Sadreev A.F. // Phys. Rev. B. - 2010. - Vol. 81. - P115128-12

Доп.точки доступа:
Bulgakov, E.N.; Sadreev, A.F.
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Bulgakov, E. N.
Bound States in Photonic Fabry-Perot Resonator Comprised of Two Nonlinear Off-Channel Defects / E. N. Bulgakov, A. F. Sadreev // JETP Letters. - 2009. - Vol. 90, Is. 12. - P. 744-749, DOI 10.1134/S0021364009240023. - Cited References: 32. - We thank Kostya Pichugin for many helpful discussions. The work was partially supported by the Russian Foundation for Basic Research, project no. 09-02-98005-Siberia. . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
SCATTERING-THEORY
   WAVE-GUIDE
   CONTINUUM
   MODES
Аннотация: Two off-channel nonlinear defects coupled to the photonic waveguide constitute the Fabry-Perot interfer-ometer (FPR). The defects are made from a Kerr-like nonlinear material. For the linear case such a FPR can support the bound states in the form of standing waves between the defects if the distance between them is quantized. For the nonlinear case the bound states appear for arbitrary distance between the defects however for an quantized electromagnetic intensity. For the transmission through FPR we reveal new resonances and show these are a result of coupling of the bound states with incident wave because of nonlinearity of the defects. The resonances are spaced at the eigen frequencies of bound states.

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Держатели документа:
[Bulgakov, E. N.
Sadreev, A. F.] Russian Acad Sci, Inst Phys, Krasnoyarsk 660036, Russia
[Bulgakov, E. N.] Siberian State Aerosp Univ, Krasnoyarsk, Russia
ИФ СО РАН
Institute of Physics, Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич; Russian Foundation for Basic Research [09-02-98005-Siberia]
}
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Bulgakov, E. N.
Bound states in photonic Fabry-Perot resonator with nonlinear off-channel defects / E. N. Bulgakov, A. F. Sadreev // Phys. Rev. B. - 2010. - Vol. 81, Is. 11. - Ст. 115128, DOI 10.1103/PhysRevB.81.115128. - Cited References: 73. - The work was partially supported by RFBR under Grant No. 09-02-98005 "Siberia." We are greatly acknowledge Konstantin Pichugin for many discussions. . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
CRYSTAL WAVE-GUIDES
   STATIONARY LOCALIZED STATES
   COUPLED-MODE THEORY
   OPTICAL RESONATORS
   NUCLEAR REACTIONS
   UNIFIED THEORY
   MICROCAVITIES
   TRANSMISSION
   CONTINUUM
   CIRCUITS
Аннотация: We consider a Fabry-Perot resonator (FPR) comprised of two off-channel nonlinear defects coupled to the photonic waveguide. For the linear case FPR can support bound states in the form of standing waves between the defects if a distance between them is quantized. For the nonlinear case the bound states appear for arbitrary distance between the defects if electromagnetic intensity is quantized. For transmission through the FPR we reveal additional resonances which are the result of coupling of incident wave with the bound states because of nonlinearity of the defects. The resonances are spaced at the eigenfrequencies of bound states with a width proportional to the input amplitude. The theory of the FPR based on the simple Wang and Fan model [Phys. Rev. E 68, 066616 (2003)] is complemented by the tight-binding one. The results for the transmission and bound states in these models agree with computations in real two-dimensional photonic crystal waveguide coupled with two off-channel defects fabricated from a Kerr-type material.

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Держатели документа:
[Bulgakov, Evgeny N.
Sadreev, Almas F.] Russian Acad Sci, Inst Phys, Krasnoyarsk 660036, Russia
[Bulgakov, Evgeny N.] Siberian State Aerosp Univ, Krasnoyarsk, Russia
ИФ СО РАН
Institute of Physics, Academy of Sciences, 660036 Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk Rabochii, 31, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
}
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10.

Bulgakov, E. N.
Bound states in the continuum in photonic waveguides inspired by defects / E. N. Bulgakov, A. F. Sadreev // Phys. Rev. B. - 2008. - Vol. 78, Is. 7. - Ст. 75105, DOI 10.1103/PhysRevB.78.075105. - Cited References: 53 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
SCATTERING-THEORY
   NUCLEAR REACTIONS
   UNIFIED THEORY
   TRANSMISSION
   ELECTRON
   MODEL
Аннотация: Photonic crystal with defect layer forms directed continuum for electromagnetic waves. Defect rods in the vicinity of the defect layer interact with the continuum and give rise to scattering of ingoing waves. We derive quantum-mechanical analog of the non-Hermitian Hamiltonian of the open system with complex eigenvalues, which describes a scattering of electromagnetic waves by the defect rods. In this formalism a bound state in the continuum (BIC) can be easily found by the condition that one of the complex eigenvalues becomes real for variation of dielectric constant of the defect rods. We numerically find BICs with discrete frequencies belong to the continuum for different arrangements of the defects and show that they are localized around the defects.

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Держатели документа:
[Bulgakov, Evgeny N.
Sadreev, Almas F.] Russian Acad Sci, Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Institute of Physics, Academy of Sciences, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
}
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11.

Bulgakov, E. N.
Ligth-induced breaking of symmetry in photonic crystal waveguides with nonlinear defects as a key for all-optical switching circuits / E. N. Bulgakov, A. F. Sadreev, K. N. Pichugin // Spontaneous symmetry breaking, self-trapping, and Josephson oscillations. - 2013. - P. 89-124. - (Progress in optical science and photonics ; Vol. 1), DOI 10.1007/10091_2011_1 . - ISSN 978-3-642
Аннотация: We consider light transmission in 2D photonic crystal waveguide coupled with two identical nonlinear defects positioned symmetrically aside the waveguide. We show that with growth of injected light power there is a breaking of symmetry by two ways. In the first way the symmetry is broken because of different light intensities at the defects. In the second way the intensities at the defects are equaled but phases of complex amplitudes are different. That results in a vortical power flow between the defects similar to the DC Josephson effect if the input power over the waveguide is applied and the defects are coupled. As application of these phenomena we consider the symmetry breaking for the light transmission in a T-shaped photonic waveguide with two nonlinear defects. We demonstrate as this phenomenon can be explored for all-optical switching of light transmission from the left output waveguide to the right one by application of input pulses. Finally we consider the symmetry breaking in the waveguide coupled with single defect presented however by two dipole modes.

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Доп.точки доступа:
Malomed, Boris A. \ed.\; Sadreev, A. F.; Садреев, Алмаз Фаттахович; Pichugin, K. N.; Пичугин, Константин Николаевич; Булгаков, Евгений Николаевич
}
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12.

Bulgakov, E. N.
Symmetry breaking for transmission in a photonic waveguide coupled with two off-channel nonlinear defects / E. N. Bulgakov, K. N. Pichugin, A. F. Sadreev // Phys. Rev. B. - 2011. - Vol. 83, Is. 4. - Ст. 45109, DOI 10.1103/PhysRevB.83.045109. - Cited References: 50. - This work was partially supported by RFBR Grant No. 09-02-98005-"Siberia" and RFBR Grant No. 11-02-00289. . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
CRYSTAL-CIRCUITS
   LOCALIZED MODES
   BISTABILITY
   IMPURITIES
   RESONANCE
   CAVITIES
   STATES
   MEDIA
Аннотация: We consider light transmission in a two-dimensional (2D) photonic crystal waveguide coupled with two identical nonlinear defects positioned symmetrically aside the waveguide. With the coupled mode theory, we show three scenarios for the transmission. The first one inherits the linear case and preserves the symmetry. In the second scenario, the symmetry is broken because of different light intensities at the defects. In the third scenario, the intensities at the defects are equal but phases of complex amplitudes are different. That results in a vortical power flow between the defects similar to the dc Josephson effect if the input power over the waveguide is applied and the defects are coupled. All of these phenomena agree well with computations based on an expansion of the electromagnetic field into optimally adapted photonic Wannier functions in a 2D photonic crystal.

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Держатели документа:
[Bulgakov, Evgeny
Pichugin, Konstantin
Sadreev, Almas] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Bulgakov, Evgeny] Siberian State Aerosp Univ, Krasnoyarsk, Russia

Доп.точки доступа:
Pichugin, K. N.; Пичугин, Константин Николаевич; Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
}
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13.

Calculating the energy of vacancies and adatoms in a hexagonal SiC monolayer / A. A. Kuzubov [et al.] // Russ. J. Phys. Chem. A. - 2012. - Vol. 86, Is. 7. - P. 1091-1095, DOI 10.1134/S0036024412070138. - Cited References: 21 . - ISSN 0036-0244

РУБ Chemistry, Physical
Рубрики:
INITIO MOLECULAR-DYNAMICS
ELECTRONIC-PROPERTIES
ABSORPTION-SPECTRA
Кл.слова (ненормированные):
silicon carbide -- defects -- adatoms -- density functional method
Аннотация: It is noted that the development of semiconductor SiC-electronics is prevented by a low quality of grown silicon carbide single crystals. It is found that structural defects of a substrate penetrating into an epitaxial layer upon subsequent homoepitaxial growth can considerably degrade a device's characteristics. We investigate the effect of the deformation of a hexagonal SiC monolayer on vacancy stability and material properties, and study the processes of silicon and carbon adatom migration over a surface of SiC.

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Публикация на русском языке Расчет энергии вакансий и адатомов в монослое гексагонального SiC [Текст] / А. А. Кузубов [и др.] // Журн. физ. химии. - 2012. - Т. 86 № 7. - С. 1207-1211

Держатели документа:
[Kuzubov, A. A.
Eliseeva, N. S.
Tomilin, F. N.
Tolstaya, A. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Kuzubov, A. A.
Krasnov, P. O.
Tomilin, F. N.
Fedorov, A. S.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Kuzubov, A. A.
Krasnov, P. O.] Siberian State Technol Univ, Krasnoyarsk 660049, Russia

Доп.точки доступа:
Kuzubov, A. A.; Кузубов, Александр Александрович; Eliseeva, N. S.; Krasnov, P. O.; Краснов, Павел Олегович; Tomilin, F. N.; Томилин, Феликс Николаевич; Fedorov, A. S.; Федоров, Александр Семенович; Tolstaya, A. V.
}
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14.

    Chemical group substitution enables highly efficient Mn4+ luminescence in heterovalent systems / H. Ming, Y. Zhao, Y. Zhou [et al.] // Adv. Optical Mater. - 2023. - Vol. 11, Is. 10. - Ст. 2300076, DOI 10.1002/adom.202300076. - Cited References: 36. - This work was financially supported by the National Key Research and Development Program of China (2022YFB3503800), the National Science Foundation of China (Grant Nos. 52202170 and 51972117). This work was also funded by RFBR according to the research project No. 19-52-80003 . - ISSN 2195-1071
   Перевод заглавия: Замена химической группы обеспечивает высокоэффективную люминесценцию Mn4+ в гетеровалентных системах
Кл.слова (ненормированные):
defects -- heterovalent substitution -- Mn4+ -- oxyfluoride -- phosphors
Аннотация: Defects are a double-edged sword for heterovalent metal-ion doping phosphors. Along with the luminescence tunability of phosphors bestowed by defects, their expected luminescence efficiency would also be inevitably lowered due to the presence of these quenching sites. Herein, a chemical group substitution strategy is proposed, where inorganic polyhedrons act as the smallest chemical units during the structural evolution of the doping process. Such a method can not only effectively prevent the defect generation for charge compensation in heterovalent doping systems, but also facilitate the incorporation of activators into the matrix, leading to extremely high luminescence efficiency. The concept is first confirmed energetically favorable by first-principles simulations. As a robust experimental proof, two newly reported Mn4+-incorporated hexavalent organic-inorganic hybrid oxyfluorides (TMA)2BO2F4:Mn4+ (where TMA stands for tetramethylammonium, and B = W6+ or Mo6+) present high quantum efficiency (up to 94.4%) and short lifetime (down to 2.26 ms) that are superior to the commercial red phosphor K2SiF6:Mn4+ (≈84.8%, ≈8.06 ms). Utilizing the differences in decay lifetimes and thermal quenching behaviors of (TMA)2BO2F4:Mn4+ and K2SiF6:Mn4+, a time- and temperature-resolved single-color multiplexing mode with high-safety and easy-access is developed for information security. This work offers an effective strategy to manipulate defect generation in luminescent materials.

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Держатели документа:
State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, and Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices, South China University of Technology, Guangzhou, 510641 P. R. China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036 Russia
Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 660041 Russia
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021 Russia
School of Physics and Optoelectronics, South China University of Technology, Guangzhou, 510641 P. R. China

Доп.точки доступа:
Ming, Hong; Zhao, Yifei; Zhou, Yayun; Molokeev, M. S.; Молокеев, Максим Сергеевич; Wang, Yuanjing; Song, Enhai; Zhang, Qinyuan
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15.

Cluster embedding in an elastic polarizable environment: Density functional study of Pd atoms adsorbed at oxygen vacancies of MgO(001) / V. A. Nasluzov [et al.] // J. Chem. Phys. - 2001. - Vol. 115, Is. 17. - P. 8157-8171, DOI 10.1063/1.1407001. - Cited References: 88 . - ISSN 0021-9606

РУБ Physics, Atomic, Molecular & Chemical
Рубрики:
TRANSITION-METAL ATOMS
   AB-INITIO
   OXIDE SURFACES
   ELECTRONIC-PROPERTIES
   ENERGY CALCULATIONS
   MOLECULAR-DYNAMICS
   MOTT-LITTLETON
   MADELUNG FIELD
   IONIC-CRYSTAL
   MGO
Кл.слова (ненормированные):
Atoms -- Binding energy -- Computer simulation -- Electron energy levels -- Electronic structure -- Magnesia -- Oxygen -- Palladium -- Polarization -- Probability density function -- Quantum theory -- Relaxation processes -- Charged defects -- Cluster embedding -- Elastic polarizable environment -- Electron affinity -- Oxygen vacancies -- Adsorption
Аннотация: Adsorption complexes of palladium atoms on F-s, F-s(+), F-s(2+), and O2- centers of MgO(001) surface have been investigated with a gradient-corrected (Becke-Perdew) density functional method applied to embedded cluster models. This study presents the first application of a self-consistent hybrid quantum mechanical/molecular mechanical embedding approach where the defect-induced distortions are treated variationally and the environment is allowed to react on perturbations of a reference configuration describing the regular surface. The cluster models are embedded in an elastic polarizable environment which is described at the atomistic level using a shell model treatment of ionic polarizabilities. The frontier region that separates the quantum mechanical cluster and the classical environment is represented by pseudopotential centers without basis functions. Accounting in this way for the relaxation of the electronic structure of the adsorption complex results in energy corrections of 1.9 and 5.3 eV for electron affinities of the charged defects F-s(+) and F-s(2+), respectively, as compared to models with a bulk-terminated geometry. The relaxation increases the stability of the adsorption complex Pd/F-s by 0.4 eV and decreases the stability of the complex Pd/F-s(2+) by 1.0 eV, but it only weakly affects the binding energy of Pd/F-s(+). The calculations provide no indication that the metal species is oxidized, not even for the most electron deficient complex Pd/F-s(2+). The binding energy of the complex Pd/O2- is calculated at -1.4 eV, that of the complex Pd/F-s(2+) at -1.3 eV. The complexes Pd/F-s and Pd/F-s(+) exhibit notably higher binding energies, -2.5 and -4.0 eV, respectively; in these complexes, a covalent polar adsorption bond is formed, accompanied by donation of electronic density to the Pd 5s orbital. (C) 2001 American Institute of Physics.

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Держатели документа:
Russian Acad Sci, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia
Tech Univ Munich, Inst Phys & Theoret Chem, D-85747 Garching, Germany
Kemerovo State Univ, Dept Phys, Kemerovo 650043, Russia
ИХХТ СО РАН
Institute of Chemistry and Chemical Technology, Russian Academy of Sciences, 660049 Krasnoyarsk, Russian Federation
Institut fur Physikalische und Theoretische Chemie, Technische Universitat Munchen, 85747 Garching, Germany

Доп.точки доступа:
Nasluzov, V. A.; Rivanenkov, V. V.; Gordienko, A. B.; Neyman, K. M.; Birkenheuer, U.; Rosch, N.
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16.

Defect modes in real photonic crystals / V. G. Arkhipkin [et al.] // Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers. - 2008. - 4th International Conference on Advanced Optoelectronics and Lasers, CAOL 2008 (29 September 2008 through 4 October 2008, Alushta, Crimea, ) Conference code: 74830. - P183-185, DOI 10.1109/CAOL.2008.4671857 . - ISBN 9781424419746 (ISBN)
Кл.слова (ненормированные):
Detect mode -- Liquid crystal -- Photonic band gap -- Photonic crystal -- Defect modes -- Detect mode -- Number of layers -- Photonic crystal structures -- Crystal atomic structure -- Crystal structure -- Defects -- Energy gap -- Gallium alloys -- Light sources -- Liquid crystals -- Liquid lasers -- Optical devices -- Photonic band gap -- Silicon on insulator technology -- Photonic crystals
Аннотация: It is demonstrated experimentally that amplitudes of defect modes of one-dimensional photonic crystal have maximal value near edges of the photonic band gap while at the centre of the stop-band they are reduced, moreover than more number of layers in photonic crystal, the less the amplitude of defect mode at the center of the PBG. We explain such behavior of defect modes presence of losses at propagation of light in real photonic crystal structures. © 2008 IEEE.

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Держатели документа:
L.V. Kirensky Institute of Physics, Krasnoyarsk Scientific Center, SB RAS
Siberian Federal University, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Shabanov, V. F.; Шабанов, Василий Филиппович; International Conference on Advanced Optoelectronics and Lasers(4th ; 2008 ; Apr. 29 Sep. - 04 Oct. ; Alushta, Crimea)
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17.

DFT investigation of the influence of ordered vacancies on elastic and magnetic properties of graphene and graphene-like SiC and BN structures / A. S. Fedorov [et al.] // Phys. Status Solidi B. - 2012. - Vol. 249, Is. 12. - P. 2549-2552, DOI 10.1002/pssb.201200105. - Cited References: 32. - The work was supported by The Ministry of education and science of Russia, project 14.B37.21.0163. The authors express their gratitude to the Joint Supercomputer Center, Russian Academy of Sciences, Moscow and the supercomputer center of the Moscow State University (SKIF-MGU) for the possibility of using their computer clusters to perform all calculations. . - ISSN 0370-1972

РУБ Physics, Condensed Matter
Рубрики:
WALLED CARBON NANOTUBES
   INITIO MOLECULAR-DYNAMICS
   AB-INITIO
   DEFECTS
   STATE
   MONOLAYER
   POINTS
Кл.слова (ненормированные):
boron nitride -- carbon silicide -- elastic properties -- graphene -- magnetic properties -- vacancies
Аннотация: Influence of ordered monovacancies on elastic properties of graphene is theoretically investigated by density functional theory (DFT) calculations. Inverse linear dependence of the graphene Young's modulus on the concentration of vacancies has been revealed and migration rate of the vacancies has been calculated as a function of applied strain. It is shown that the migration rate can be controlled by applying various strains or temperatures. The influence of ordered monovacancies on magnetic properties of graphene as well as graphene-like hexagonal carbon silicide (2D-SiC) and the boron nitride (h-BN) structures is investigated. It is established that the presence of vacancies in all systems yields the appearance of local magnetic moment. However, in 2D-SiC structure the magnetic moment occurs only in the case of a Si vacancy. Influence of the distance between vacancies on the ferromagnetic or anti-ferromagnetic ordering for all structures is established. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Держатели документа:
[Fedorov, A. S.
Popov, Z. I.
Fedorov, D. A.] RAS, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Eliseeva, N. S.
Serjantova, M. V.
Kuzubov, A. A.] Siberian Fed Univ, Krasnoyarsk 660028, Russia

Доп.точки доступа:
Fedorov, A. S.; Федоров, Александр Семенович; Popov, Z. I.; Попов, Захар Иванович; Fedorov, D. A.; Федоров, Дмитрий Александрович; Eliseeva, N. S.; Serjantova, M. V.; Kuzubov, A. A.; Кузубов, Александр Александрович
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18.

Effect of impurities on the successive phase transitions in (Cs1-xRbx)(2)ZnI4 compounds / I. P. Aleksandrova [et al.] // J. Phys.: Condens. Matter. - 2002. - Vol. 14, Is. 49. - P. 13623-13634, DOI 10.1088/0953-8984/14/49/316. - Cited References: 27 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
X-RAY
   CS2ZNI4
   SYSTEM
   HEAT
Кл.слова (ненормированные):
Phase transitions -- Point defects -- Specific heat -- Temperature -- X ray diffraction analysis -- Zinc compounds -- Lock-in transition -- Nuclear quadrupole resonance -- Single crystals
Аннотация: The heat capacity, nuclear quadrupole resonance (NQR) and x-ray diffraction of (Cs1-xRbx)(2)ZnI4 single crystals have been measured, for x = 0, 0.001, 0.005, 0.01, 0.025 and 0.05. The normal to incommensurate (N-Inc) phase transition at T-I, the incommensurate to commensurate (Inc-C) lock-in transition at T-L and the structural commensurate monoclinic to triclinic transition at T-LT, observed in the parent compound (x = 0), takes place for x = 0, 0.001, 0.005 and 0.01. For x = 0.025 only T-I and T-L are detected, while for x = 0.05 no transitions were observable. The values of T-I and T-L increase with x while T-LT decreases and disappears at the concentration x = 0.025. The effect of defects, besides modifying the transition temperatures, is that of broadening and lowering the heat capacity anomaly at the lock-in transition until its total quenching for x = 0.05. No observable hysteresis is detected in this transition. NQR and x-ray diffraction data show the Inc-C transition up to the highest concentration. We conclude that this phenomenology is caused by weak interaction of the incommensurate modulation with point defects even in the region close to the Inc-C transition.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
ИФ СО РАН
L V Kirenski Institute of Physics, Russian Academy of Sciences, Siberian Branch, 660036 Krasnoyarsk, Russian Federation
Inst. de Ciencia de Mat. de Aragon, CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain

Доп.точки доступа:
Aleksandrova, I. P.; Александрова, Инга Петровна; Bartolome, J.; Falvello, L. R.; Torres, J. M.; Sukhovskii, A. A.; Суховский, Андрей Андреевич
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19.

Electrically controllable optical switch based on one-dimensional photonic crystal / V. A. Gunyakov [et al.] // Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers. - 2008. - 4th International Conference on Advanced Optoelectronics and Lasers, CAOL 2008 (29 September 2008 through 4 October 2008, Alushta, Crimea, ) Conference code: 74830. - P186-188, DOI 10.1109/CAOL.2008.4671886 . - ISBN 9781424419746 (ISBN)
Кл.слова (ненормированные):
Detect mode -- Liquid crystal -- Photonic band gap -- Photonic crystal -- Crossed polarizers -- Detect mode -- Electric-field -- Electrooptical switches -- Light waves -- Spectral ranges -- Crystal atomic structure -- Crystal defects -- Energy gap -- Gallium alloys -- Light sources -- Liquid crystals -- Liquid lasers -- Nematic liquid crystals -- Optical devices -- Photonic crystals -- Photonic band gap
Аннотация: Electrooptical switch within narrow spectral range has been demonstrated. The switch consisting of one-dimensional photonic crystal with a nematic liquid crystal defect layer was placed between two crossed polarizers. Principle of operation is based on the interference of the ordinary and extraordinary light waves passed across the device due to the electric-field induced coincidence of their wavelengths. © 2008 IEEE.

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Держатели документа:
L. V. Kirensky Institute of Physics, Krasnoyarsk Scientific Center, SB RAS
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Shabanov, V. F.; Шабанов, Василий Филиппович; International Conference on Advanced Optoelectronics and Lasers(4th ; 2008 ; Apr. 29 Sep. - 04 Oct. ; Alushta, Crimea)
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20.

    Electrically induced transformations of defects in cholesteric layer with tangential-conical boundary conditions / M. N. Krakhalev, O. O. Prishchepa, V. S. Sutormin [et al.] // Sci. Rep. - 2020. - Vol. 10, Is. 1. - Ст. 4907, DOI 10.1038/s41598-020-61713-9. - Cited References: 45. - The authors are grateful for the financial support by the Russian Science Foundation (Grant No. 18-72-10036) . - ISSN 2045-2322
   Перевод заглавия: Электро-индуцированные трансформации дефектов в холестерическом слое с тангенциально-коническими граничными условиями
Кл.слова (ненормированные):
electric field -- liquid crystal -- pitch -- polarization microscopy -- thickness
Аннотация: Electric-field-induced changes of the orientational structures of cholesteric liquid crystal layer with the tangential-conical boundary conditions have been investigated. The samples with the ratio of the cholesteric layer thickness d to the helix pitch p equalled to 0.57 have been considered. The perpendicularly applied electric field causes a decrease of the azimuthal director angle at the substrate with the conical surface anchoring. In the cells with d = 22 μm, the defect loops having the under-twisted and over-twisted areas are formed. At the defect loop the pair of point peculiarities is observed where the 180° jump of azimuthal angle of the director occurs. Under the action of electric field the loops shrink and disappear. In the cells with d = 13 μm, the over-twisted and under-twisted defect lines are formed. Applied voltage results in the shortening of lines or/and their transformation into a defect of the third type. The director field distribution near defect lines of three types has been investigated by the polarising microscopy techniques. It has been revealed that the length ratio between the over-twisted and third-type defect lines can be controlled by the electric field.

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Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Krakhalev, M. N.; Крахалев, Михаил Николаевич; Prishchepa, O. O.; Прищепа, Оксана Олеговна; Sutormin, V. S.; Сутормин, Виталий Сергеевич; Bikbaev, R. G.; Бикбаев, Рашид Гельмединович; Timofeev, I. V.; Тимофеев, Иван Владимирович; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич
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