Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedoseev A. D.
Заглавие : Modification of topological corner excitations at the interplay of boundary geometry and Coulomb interaction
Колич.характеристики :9 с
Место публикации : J. Phys. Condens. Matter. - 2023. - Vol. 35, Is. 45. - Ст.455301. - ISSN 09538984 (ISSN), DOI 10.1088/1361-648X/aceddf. - ISSN 1361648X (eISSN)
Примечания : Cited References: 35. - The author thanks S V Aksenov and M M Korovushkin for the fruitful discussions and valuable remarks. The reported study was supported by Russian Science Foundation (Project No. 22-22-20076) and Krasnoyarsk Regional Fund of Science
Аннотация: The effect of Coulomb interaction on the 2D second order topological superconductor is investigated taking into account different geometries of the boundary in the mainframe of the mean-field approximation. The spontaneous symmetry breaking, described earlier in Aksenov et al (2023 Phys. Rev.B 107 125401), is found to be robust against the boundary deformation. Meanwhile, the details of the state with spontaneously broken symmetry is found to be dependent on the specific boundary geometry. Considering different types of the boundary of the 2D system, it is demonstrated that the deviation of the electron density in the broken symmetry state is determined by the position of the zero-dimensional (second-order) excitations with nearly zero energy. The critical value of the Coulomb interaction, at which the transition occurs, is found to be determined by the energy of these excitations, which is non-zero due to overlapping of the wave-functions at different corners.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V.
Заглавие : Antiferromagnetic excitonic insulator
Колич.характеристики :12 с
Место публикации : J. Exp. Theor. Phys. - 2023. - Vol. 137, Is. 4: Special Issue dedicated to the 95th Anniversary of L. A. Prozorova. - P.474-485. - ISSN 1063-7761 (ISSN), DOI 10.1134/S1063776123100138. - ISSN 10906509 (eISSN)
Примечания : Cited References: 39
Аннотация: The effective the two-band Hamiltonian is obtained for iridium oxides with account for strong electron correlations (SEC) and the spin–orbit interaction. The intraatomic electron correlations in iridium ions induce the formation of Hubbard fermions (HF) filling the states in the valence band. Another consequence of SEC is associated with the emergence of the antiferromagnetic (AFM) exchange interaction between HF in accordance with the Anderson mechanism. As a result, a long-range antiferromagnetic order is established in the system, and in the conditions of band overlapping, the intersite Coulomb interaction induces a phase transition to the excitonic insulator (EI) state with a long-range AFM order. The system of integral self-consistent equations, the solution to which determines the excitonic order parameter components Δi, j(k), sublattice magnetization M, Hubbard fermion concentration nd, and chemical potential μ, is obtained using the atomic representation, the method of two-time temperature Green’s functions, and the Zwanzig–Mori projection technique. The symmetry classification of AFM EI phases is performed, and it is shown that in the nearest neighbor approximation, state Δi, j(k) with the s-type symmetry corresponds to the ground state, while the phases with the d- and p-symmetries are metastable.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Fedchenko D. P., Rudakova N. V., Timofeev I. V.
Заглавие : Tiling photonic topological insulator for laser applications
Место публикации : Appl. Sci. - 2023. - Vol. 13, Is. 6. - Ст.4004. - ISSN 20763417 (eISSN), DOI 10.3390/app13064004
Примечания : Cited References: 31. - This research was funded by the Russian Science Foundation (project no. 22-42-08003)The authors are grateful to V.M. Sventitskii for useful discussions and materials used for experiment
Аннотация: A photonic topological insulator is a structure that isolates radiation in the bulk rather than at the edge (surface). Paradoxically, applications of such an insulator focus on its conducting edge states, which are robust against structural defects. We suggest a tiling photonic topological insulator constructed from identical prism resonators connected to each other. The light beam circulates inside the tiling bulk without propagation. However, we experimentally demonstrate a topologically-protected propagating state due to the disconnected faces of the edge resonators. The investigated state is robust against removing or attaching prism resonators. Moreover, the protection principle is phase-free and therefore highly scalable both in wavelength and resonator size. The tiling is suggested for active topological photonic devices and laser arrays.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedchenko D., Kulikov V., Timofeev I. V.
Заглавие : Rudner photonic topological insulators in the language of the Zhegalkin operators
Колич.характеристики :5 с
Место публикации : Nonlinear Phenom. Complex Syst. - 2023. - Vol. 26, Is. 1. - P.72-76. - ISSN 15614085 (ISSN), DOI 10.33581/1561-4085-2023-26-1-72-76. - ISSN 18172458 (eISSN)
Примечания : Cited References: 5
Аннотация: A topological insulator is a material that exhibits the properties of a conductor on the surface and of an insulator in the bulk. The Rudner game is a simplified model of a topological insulator implemented on a two-dimensional photonic lattice of resonators, which is described in the language of tricolor four-cycle two-dimensional Wolfram cellular automata. It is a case of a regular two-dimensional lattice, in which each cell is colored in one of three colors (for a photonic topological insulator, these colors mean the presence of a photon in a resonator, the absence of a photon, and a topological insulator boundary). By setting the transformation rule for each cell, depending on the state of the nearest neighbors and the cell itself, for equal discrete time intervals we obtain a cellular automaton. In this study, the Rudner game is rewritten equivalently in terms of operators in the Zhegalkin polynomial ring with coefficients in a field consisting of three elements.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedchenko, Dmitry P., Kim, Petr N., Timofeev I. V.
Заглавие : Photonic topological insulator based on frustrated total internal reflection in array of coupled prism resonators
Место публикации : Symmetry. - 2022. - Vol. 14, Is. 12. - Ст.2673. - ISSN 20738994 (eISSN), DOI 10.3390/sym14122673
Примечания : Cited References: 19
Аннотация: Total internal reflection occurs at the interface between two media with different refractive indices during propagation of light rays from a medium with a higher refractive index to a medium with a lower refractive index. If the thickness of the second medium is comparable to a specific light wavelength, then total internal reflection is violated partially or completely. Based on the frustrated total internal reflection, herein we discuss a two-dimensional photonic topological insulator in an array consisting of triangular, quadrangular, or hexagonal transparent prism resonators with a narrow gap between them. An array of prism resonators allows topologically stable edge solutions (eigenwaves) similar to those studied in ring resonators. Moreover, total internal reflection occurs at different angles of incidence of light. This makes it possible to obtain a set of fundamentally new edge solutions. The light is presumably concentrated at the surface; however, in the new solutions it penetrates relatively deep into the photonic topological insulator and excites several layers of prisms positioned beyond the surface. Remarkably, the direction of light propagation is precisely biased, and therefore new solutions exhibit lower symmetry than the resonator array symmetry.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyarova T. E., Shanidze, Lev V., Lukyanenko A. V., Baron F. A., Krasitskaya, Vasilisa V., Kichkailo, Anna S., Tarasov A. S., Volkov N. V.
Заглавие : Protein biosensor based on Schottky barrier nanowire field effect transistor
Место публикации : Talanta. - 2022. - Vol. 239. - Ст.123092. - ISSN 0039-9140 (ISSN), DOI 10.1016/j.talanta.2021.123092. - ISSN 1873-3573 (eISSN)
Примечания : Cited References: 44. - The reported study was funded by RFBR according to the research project № 20-32-90134. The authors thank RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (projects nos. 20-42-243007 and 20-42-240013) and the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) for financial support. Electron microscopy investigations were conducted with the help of equipment of the Krasnoyarsk Territorial Shared Resource Center, Krasnoyarsk Scientific Center, Russian Academy of Sciences
Аннотация: A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (IDS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Shanidze, Lev, Bondarev I. A., Baron F. A., Lukyanenko A. V., Yakovlev I. A., Volochaev M. N., Volkov N. V.
Заглавие : Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
Место публикации : Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст.2100459. - ISSN 1862-6300, DOI 10.1002/pssa.202100459. - ISSN 1862-6319(eISSN)
Примечания : Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886
Предметные рубрики: NANOSTRUCTURES
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Orlov Yu. S., Nikolaev S. V., Nesterov A. I., Ovchinnikov S. G.
Заглавие : Light-induced ultrafast dynamics of spin crossovers under high pressure
Место публикации : J. Exp. Theor. Phys. - 2021. - Vol. 132, Is. 3. - P.399-415. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776121030079
Примечания : Cited References: 71. - The authors thank the Russian Scientific Foundation for the financial support under the grant 18-12-00022
Аннотация: Within the multielectron model of magnetic insulator with two different spin terms at each cation and spin crossover under high pressure we have studied dynamics of a sudden excited non equilibrium spin state. We obtain the different relaxation of the magnetization, high spin/low spin occupation numbers, and the metal-oxygen bond length for different values of the external pressure. For each pressure-temperature values stationary state agrees to the mean field phase diagrams. We found the long living oscillations of magnetization for the high spin ground state at small pressure. Close to crossover pressure the smooth relaxation is accompanied with a set of sharp strongly non linear oscillations of magnetization and HS/LS occupation numbers that are accompanied by the Franck–Condon resonances.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lukyanenko A. V., Tarasov A. S., Shanidze L. V., Volochaev M. N., Zelenov F. V., Yakovlev I. A., Bondarev I. A., Volkov N. V.
Заглавие : Technique for fabricating ferromagnetic/silicon active devices and their transport properties
Место публикации : J. Surf. Invest. - 2021. - Vol. 15, Is. 1. - P.65-69. - ISSN 10274510 (ISSN), DOI 10.1134/S1027451021010109
Примечания : Cited References: 15. - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, the Presidium of the Russian Academy of Sciences (Program no. 32 “Nanostructures: Physics, Chemistry, Biology, and Fundamentals of Technologies”), and the Russian Foundation for Basic Research, the Government of Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243 022
Аннотация: Semiconductor nanowires are unique materials for studying nanoscale phenomena; the possibility of forming silicon nanowires on bulk silicon-on-insulator substrates in a top-down process ensures complete incorporation of this technology into integrated electronic systems. In addition, the use of ferromagnetic contacts in combination with the high quality of ferromagnetic–semiconductor interfaces open up prospects for the use of such structures in spintronics devices, in particular, spin transistors. A simple approach is proposed to create semiconductor nanowire-based active devices, specifically, bottom-gate Schottky-barrier field-effect transistors with a metal (Fe) source and drain synthesized on a silicon-on-insulator substrate and the transport characteristics of the designed transistors are investigated.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedoseev A. D.
Заглавие : Realization conditions and the magnetic field dependence of corner excitations in the topological insulator with superconducting coupling on the triangular lattice
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory [19-02-00348]; Krasnoyarsk Regional Fund of Science [20-42-243005]; "Coulomb interactions in the problem of Majorana modes in low-dimensional systems with nontrivial topology" [19-42-240011]; Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific SchoolsLeading Scientific Schools Program [MK1641.2020.2]
Место публикации : J. Exp. Theor. Phys. - 2021. - Vol. 133, Is. 1. - P.71-76. - ISSN 1063-7761, DOI 10.1134/S1063776121060029. - ISSN 1090-6509(eISSN)
Примечания : Cited References: 38. - This work was supported by the Russian Foundation for Basic Research (project no. 19-02-00348), Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research projects: "Study of edge states in oneand two-dimensional topological superconductors" (no. 20-42-243005), "Coulomb interactions in the problem of Majorana modes in low-dimensional systems with nontrivial topology" (no. 19-42-240011), and Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (Project MK1641.2020.2)
Предметные рубрики: EDGE
STATES
ORDER
Аннотация: The studies of the topological properties of systems have recently been extended due to a new concept of higher-order topological insulators and superconductors. Many models were proposed for two-dimensional systems on a square lattice, where corner excitations can appear; however, the problem of existence of such excitations in superconducting systems with a triangular crystal lattice is still poorly understood. Using a topological insulator in the form of a triangle with a chiral superconducting order parameter as an example, we shows that corner excitations can exist in C3-symmetric systems. In spite of a nontopological character, these excitations have energies inside the gap of the first-order edge excitation spectrum over a wide parameter range and are well localized at the corners of the system. Gapless corner excitations are shown to exist in the system at certain parameters. The application of a magnetic field in the system plane removes the triple degeneracy of the corner excitation energy and makes it possible to control the position of the minimum-energy corner excitation using a magnetic field. At the same time the fine adjustment to achieve the gapless excitations at the chosen corner can be made with changing of the magnetic field value.
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