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ZHIGALOV, V. S.
MAGNETIC AND SEMICONDUCTOR PROPERTIES OF IRON NITRIDE FILMS / V. S. ZHIGALOV, L. I. VERSHININA, G. I. FROLOV // Fiz. Tverd. Tela. - 1984. - Vol. 26, Is. 6. - P. 1887-1889. - Cited References: 4 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
Vershinina, L. I.; Вершинина, Людмила Иосифовна; FROLOV, G. I.
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    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
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Wannier-Stark resonances in semiconductor superlattices / M. . Gluck [et al.] // Phys. Rev. B. - 2002. - Vol. 65, Is. 11. - Ст. 115302, DOI 10.1103/PhysRevB.65.115302. - Cited References: 22 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
ELECTRIC-FIELD
   STATES
   LADDERS
   BREAKDOWN
   BLOCH
   LOCALIZATION
Аннотация: Wannier-Stark states for semiconductor superlattices in strong static fields, where the interband Landau-Zener tunneling cannot be neglected, are rigorously calculated. The lifetime of these metastable states was found to show multiscale oscillations as a function of the static field, which is explained by an interaction with above-barrier resonances. An equation, expressing the absorption spectrum of semiconductor superlattices in terms of the resonance Wannier-Stark states, is obtained and used to calculate the absorption spectrum in the region of high static fields.

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Держатели документа:
Univ Kaiserslautern, Fachbereich Phys, D-67653 Kaiserslautern, Germany
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Gluck, M.; Kolovsky, A. R.; Коловский, Андрей Радиевич; Korsch, H. J.; Zimmer, F.
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Vetrov, S. Ya.
Spectral properties of a one-dimensional photonic crystal with a resonant defect nanocomposite layer / S. Y. Vetrov, A. Y. Avdeeva, I. V. Timofeev // J. Exp. Theor. Phys. - 2011. - Vol. 113, Is. 5. - P. 755-761, DOI 10.1134/S1063776111140093. - Cited References: 33. - This work was supported by projects nos. NSh-7810.2010.3, RNP.2.1.1.3455, 27.1 and 3.9.1 of the Russian Academy of Sciences, 5 and 144 of the Siberian Branch of the Russian Academy of Sciences, and State contract no. 02.740.11.0220 according to the program Research and Scientific-Pedagogical Brainpower of Innovated Russia. . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
OPTICAL-PROPERTIES
   SEMICONDUCTOR MICROCAVITIES
   2ND-HARMONIC GENERATION
   HETEROGENEOUS MEDIA
   MODE
   ENHANCEMENT
   DISPERSION
   SYSTEM
Аннотация: The spectral properties of a one-dimensional photonic crystal with a defect nanocomposite layer that consists of metallic nanoballs distributed in a transparent matrix and is characterized by an effective resonance permittivity are studied. The problem of calculating the transmission, reflection, and absorption spectra of p-polarized waves in such structures is solved for oblique incidence of light, and the spectral manifestation of defect-mode splitting as a function of the volume fraction of nanoballs and the structural parameters is studied. The splitting is found to depend substantially on the nanoball concentration in the defect, the defect layer thickness, and the angle of incidence. The angle of incidence is found at which the resonance frequency of the nanocomposite is located near the edge of the bandgap or falls in the frequency region of a continuous spectrum. The resonance situation appearing in this case results in an additional transmission band or an additional bandgap in the transmission spectrum.

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Держатели документа:
[Vetrov, S. Ya.
Avdeeva, A. Yu.] Siberian Fed Univ, Krasnoyarsk 660074, Russia
[Timofeev, I. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Avdeeva, A. Y.; Timofeev, I. V.; Тимофеев, Иван Владимирович; Ветров, Степан Яковлевич
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Val'kov, V. V.
Ground-State Fermion Parity and Caloric Properties of a Superconducting Nanowire / V. V. Val'kov, V. A. Mitskan, M. S. Shustin // J. Exp. Theor. Phys. - 2019. - Vol. 129, Is. 3. - P. 426-437, DOI 10.1134/S1063776119080144. - Cited References: 74. - This work was supported by the Russian Foundation for Basic Research (project nos. 16-02-00073, 18-32-00443, 18-42-243017, 18-42-243018), the Government of the Krasnoyarsk Kray, the Krasnoyarsk Kray Science Foundation within the scientific projects “Contact Phenomena and Magnetic Disorder in the Formation and Detection of Topologically Protected Edge States in Semiconductor Nanostructures” (project no. 18-42-243018), “Manifestation of Coulomb Interactions and Bounded-Geometry Effects in the Properties of Topological Edge States of Nanostructures with Spin–Orbit Interactions” (project no. 18-42-243017). One of us (Sh. M. S.) thanks the Council for Grants of the Russian President (project nos. MK-3594.2018.2 and MK-3722.2018.2). . - ISSN 1063-7761
Кл.слова (ненормированные):
Nanowires -- Quantum interference devices -- Semiconductor insulator boundaries -- Topology
Аннотация: Abstract: The ground-state structure and fermion parity have been determined for a semiconductor nano-wire with a strong Rashba spin–orbit interaction and proximity-induced superconductivity placed in an external magnetic field under periodic boundary conditions. Allowance for the open boundaries is shown to cause the topologically nontrivial parameter region to be partitioned into a set of subregions with a different ground-state fermionic parity. This peculiarity is related to the emergence of edge modes with nonmonotonically changing excitation energies in the system as its parameters change. At the quantum transition point, at which the ground-state fermionic parity changes, the edge-mode energy is zero. The magneto- and electrocaloric effects are shown to be effective characteristics that allow the series of quantum transitions in an open nanowire to be identified experimentally. These effects at low temperatures exhibit an anomalous behavior in the parameter region for which topologically stable Majorana modes are realized in long nanowires. © 2019, Pleiades Publishing, Inc.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences, AkademgorodokKrasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Mitskan, V. A.; Мицкан, Виталий Александрович; Shustin, M. S.; Шустин, Максим Сергеевич; Вальков, Валерий Владимирович
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Transport properties of high-temperature superconductor plus semiconductor composites with different carrier concentration / M. I. Petrov [et al.] // Phys. Solid State. - 1997. - Vol. 39, Is. 5. - P. 735-740, DOI 10.1134/1.1129959. - Cited References: 26 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
CRITICAL CURRENTS
WEAK LINKS
JUNCTIONS
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity rho(T), critical current density J(c)(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). (C) 1997 American Institute of Physics.

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
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Transport properties of high-temperature superconductor + semiconductor composites with different carrier concentration / M. I. Petrov [et al.] // Physics of the Solid State. - 1997. - Vol. 39, Is. 5. - P. 735-740 . - ISSN 1063-7834
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity p(T), critical current density Jc(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). В© 1997 American Institute of Physics.

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Доп.точки доступа:
Петров, Михаил Иванович; Petrov, M. I.; Balaev, D. A.; Балаев, Дмитрий Александрович; Шайхутдинов, Кирилл Александрович; Shaikhutdinov, K. A.; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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Transport properties of composites high temperature superconductor + semiconductor with different carrier concentration / M. I. Petrov [et al.] // Physica C-Superconductivity and its Applications. - 1997. - Vol. 282, Is. PART 4. - P. 2449-2450 . - ISSN 0921-4534
Кл.слова (ненормированные):
Carrier concentration -- Critical current density (superconductivity) -- High temperature superconductors -- Semiconductor materials -- Thermal effects -- Transport properties -- Superconductor semiconductor superconductor junctions -- Composite materials
Аннотация: Composites HTSC + semiconductor with different carrier concentrations were prepared as a model of Josephson type contacts. Experimental temperature dependences of the critical current density Jc(T) in the composites are presented. The best congruence of experiment with theory was reached for the Schussler-Kummel consideration of Andreev scattering in S-Sm-S (S-superconductor, Sm-semiconductor) junctions.

Scopus

Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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    The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect / A. V. Kobyakov [et al.] // J. Phys. Conf. Ser. - 2019. - Vol. 1389, Is. 1. - Ст. 012028, DOI 10.1088/1742-6596/1389/1/012028. - Cited References: 13. - These studies are conducted with financial support from the Russian Foundation for Basic Research (grant No.18-02-00161-a). . - ISSN 1742-6588. - ISSN 1742-6596
   Перевод заглавия: Роль полупроводникового слоя в структуре пленок обменного смещения CoNi / Si / FeNi / Si с эффектом спиновой пружины
Аннотация: CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the temperature greater than 100K.

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Держатели документа:
Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russia
L.V. Kirensky Institute of Physics of Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, 660036, Russia

Доп.точки доступа:
Kobyakov, A. V.; Кобяков, Александр Васильевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Yushkov, V. I.; Юшков, Василий Иванович; Yarikov, S. A.; Яриков, Станислав Алексеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhivaya, Ya. A.; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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10.

The mechanisms responsible for broadening of the resistive transition under magnetic field in the Josephson junction network realized in bulk YBCO+CuO composites / D. A. Balaev [et al.] // Physica C. - 2006. - Vol. 435, Is. 1-2. - P. 12-15, DOI 10.1016/j.physc.2006.01.008. - Cited References: 15 . - ISSN 0921-4534

РУБ Physics, Applied
Рубрики:
SUPERCONDUCTORS
MODEL
Кл.слова (ненормированные):
Josephson network -- YBCO plus CuO composites -- dissipation -- magnetic field -- Dissipation -- Josephson network -- Magnetic field -- YBCO + CuO composites -- Composite materials -- Copper compounds -- Mathematical models -- Phase transitions -- Semiconductor junctions -- Yttrium compounds -- Creep model -- Josephson network -- YBCO + CuO composites -- Magnetic field effects
Аннотация: The experimental results of the effect of the magnetic field (up to 60 kOe) on the broadening of the resistive transition of bulk composites Y3/4Lu1/4Ba2CU3O7 (YBCO) + CuO are presented. These composites represent the network of the tunnel-type Josephson junctions where the copper oxide acts as a material forming barriers between YBCO crystallites. The mechanisms responsible for broadening of the resistive transition under magnetic field are discussed. The analysis of experimental R(7) dependences have shown that in the low field range 0-10(2) Oe, the R(7) dependences are described well by the Ambegaokar-Halperin (AH) model. In the range 10(3)-6 x 10(4) Oe, the dissipation follows Arrhenius law R similar to exp(-U(H)/k(B)T) characteristic for thermally activated flux creep model. In the range H similar to 10(2)-10(3), the crossover from AH to flux creep dissipation mechanisms occurs. (c) 2006 Elsevier B.V. All rights reserved.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Shaihutdinov, K. A.; Petrov, M. I.; Петров, Михаил Иванович; International Workshop on Weak Superconductivity(2005 ; Sept. ; 16-19 ; Bratislava, Slovakia)
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11.

The magnetoelastic effect in CoxMn1-xS solid solutions / S. S. Aplesnin [et al.] // Solid State Commun. - 2010. - Vol. 150, Is. 13-14. - P. 564-567, DOI 10.1016/j.ssc.2010.01.009. - Cited References: 13. - This work was supported by the Russian Foundation for Basic Research projects no. 08-02-00364-a, no. 08-02-90031, no. F08037, F08-229, and no. 09-02-00554-a. . - ISSN 0038-1098

РУБ Physics, Condensed Matter
Рубрики:
YVO3 SINGLE-CRYSTAL
   SPIN-STATE
   TRANSITION
   TRANSPORT
   PHYSICS
   LACOO3
Кл.слова (ненормированные):
Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Coefficient of thermal expansion -- Magnetoelastic effects -- Orbital ordering -- Temperature hysteresis -- Temperature range -- Zero magnetic fields -- Crystallization -- Electric resistance -- Magnetic field effects -- Magnetoresistance -- Manganese -- Manganese compounds -- Neon -- Organic polymers -- Scattering -- Semiconductor quantum dots -- Solid solutions -- Solidification -- Thermal stress -- X ray scattering -- Thermal expansion
Аннотация: The magnetization of cation-substituted CoxMn(1-x)S sulfides upon cooling in zero magnetic field and in a field in the temperature range 4-300 K has been measured and the resistance versus magnetic field (up to 10 kOe) dependences have been obtained. Magnetoresistance and temperature hysteresis of magnetization versus prehistory are found at the magnetic field H < 0.1 T and at T < 240 K. The interrelation between the magnetic and elastic subsystems of the CoxMn1-xS solid solutions has been established. A jump in the coefficient of thermal expansion is observed at the Neel temperature. The features of the physical properties are explained by orbital ordering. (C) 2010 Elsevier Ltd. All rights reserved.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Har'kov, A. M.] MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia
[Gorev, M. V.
Balaev, A. D.
Eremin, E. V.
Bovina, A. F.] Russian Acad Sci, KSC Siberian Branch, Ctr Shared, Krasnoyarsk 660036, Russia
КНЦ СО РАН
M.F. Reshetneva Aircosmic Siberian State University, Krasnoyarsk, 660014, Russian Federation
Center of shared using KSC Siberian branch, Russian Academy Science, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Har'kov, A. M.; Gorev, M. V.; Горев, Михаил Васильевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Eremin, E. V.; Еремин, Евгений Владимирович; Bovina, A. F.; Бовина, Ася Федоровна
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12.

The influence of the semiconductor layer on the magnetic properties in a three-layer structure CoNi/Si/FeNi / A. V. Kobyakov [et al.] // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 1. - Ст. C.P30. - P. 319. - Cited References: 2. - These studies are conducted with financial support from the Russian Foundation for Basic Research (grant # 18-02-00161-a) . - ISBN 978-5-9500855-7-4

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Kobyakov, A. V.; Кобяков, Александр Васильевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Yushkov, V. I.; Юшков, Василий Иванович; Yarikov, S. A.; Яриков, Станислав Алексеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhivaya, Ya. A.; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
Нет сведений об экземплярах (Источник в БД не найден)
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13.

The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier / N. V. Volkov [et al.] // Appl. Phys. Lett. - 2014. - Vol. 104, Is. 22. - Ст. 222406, DOI 10.1063/1.4881715. - Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043. . - ISSN 0003-6951. - ISSN 1077-3118

РУБ Physics, Applied
Рубрики:
MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
Russian Acad Sci, Inst Automat & Control Proc, Far East Branch, Vladivostok 690041, Russia
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Gustaitsev, A. O.; Balashov, V. V.; Korobtsov, V .V.; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
}
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14.

The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films / S. S. Aplesnin [et al.] // Semicond. Sci. Technol. - 2018. - Vol. 33, Is. 8. - Ст. 085006, DOI 10.1088/1361-6641/aace44. - Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project No 18-52-00009 Bel_a; No 18-32-00079 mol_a; No 18-42-240001 r_a; the state order No 3.5743.2017/6.7. . - ISSN 0268-1242. - ISSN 1361-6641

РУБ Engineering, Electrical & Electronic + Materials Science,
Рубрики:
NEUTRON-SCATTERING
   SURFACE-STATES
   MNTE
   CONDUCTIVITY
   MECHANISM
Кл.слова (ненормированные):
polycrystalline films -- magnetoresistance -- impedance -- polaron -- magnetic -- properties -- thermoelectric
Аннотация: The correlation between the dc and ac electrical resistance and the structural, magnetic, and thermoelectric properties of polycrystalline MnSe1−X Te Х (0.3 ≤ X ≤ 0.4) manganese chalcogenide films in the temperature range of 80–400 K has been investigated. Inhomogeneous electronic states and transitions between them accompanied by structural lattice deformations have been found at temperatures including the Neel temperature region. The magnetic susceptibility maximum above the Neel temperature in a magnetic field of 8.6 kOe has been observed. Temperature ranges of the coexistence of two types of electrically inhomogeneous states have been established by impedance spectroscopy in the frequency range of 0.1–1000 kHz and the change of the hopping conductivity for diffusion one accompanied by the magnetic susceptibility minimum has been found. The magnetoresistance in magnetic fields of up to 12 kОе has been established. It has been revealed that the thermopower and magnetoresistance change its sign upon heating. The experimental data are explained using a spin polaron model with the localization of polarons and formation of the electron phase-separation. The alternation of magnetoresistance in sign is attributed to the ferromagnetic orbital ordering of electrons and the negative magnetoresistance is explained by suppression of spin fluctuations in a magnetic field.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarskii Rabochi Ave 31, Krasnoyarsk 660014, Russia.
Sci Pract Mat Res Ctr NAS Belarus, P Brovki Str 19, Minsk 220072, BELARUS.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Romanova, O. B.; Романова, Оксана Борисовна; Sitnikov, M. N.; Kretinin, V. V.; Galyas, A., I; Yanushkevich, K., I; Russian Foundation for Basic Research (RFBR) [18-52-00009 Bel_a, 18-32-00079 mol_a, 18-42-240001 r_a]; [3.5743.2017/6.7]
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15.

TEMPERATURE-DEPENDENCE OF MOBILITY IN MAGNETIC SEMICONDUCTOR HGCR2SE4 / V. K. CHERNOV [и др.] // Fiz. Tverd. Tela. - 1986. - Vol. 28, Is. 1. - P. 289-291. - Cited References: 8 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
CHERNOV, V. K.; GAVRICHKOV, V. A.; IVANOVA, N. B.; VEISIG, G. S.; BOYARSHINOV, Y. V.
}
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16.

Symmetry breaking in a driven and strongly damped pendulum / J. . Isohatala [et al.] // Phys. Rev. E. - 2005. - Vol. 71, Is. 6. - Ст. 66206, DOI 10.1103/PhysRevE.71.066206. - Cited References: 37 . - ISSN 1539-3755

РУБ Physics, Fluids & Plasmas + Physics, Mathematical
Рубрики:
DC VOLTAGE GENERATION
   SEMICONDUCTOR SUPERLATTICES
   JOSEPHSON-JUNCTIONS
   BLOCH OSCILLATIONS
   FORCED PENDULUM
   CHAOS
   FREQUENCY
   SYSTEMS
   RECTIFICATION
   STANDARD
Кл.слова (ненормированные):
Periodically driven pendulums -- Symmetry breaking -- Bifurcation (mathematics) -- Damping -- Dynamics -- Nonlinear systems -- Semiconductor superlattices -- Pendulums
Аннотация: We examine the conditions for appearance of a symmetry breaking bifurcation in damped and periodically driven pendulums in the case of strong damping. We show that symmetry breaking, unlike other nonlinear phenomena, can exist at high dissipation. We prove that symmetry breaking phases exist between phases of symmetric normal and symmetric inverted oscillations. We find that symmetry broken solutions occupy a smaller region of the pendulum's parameter space in comparison to the statements made in earlier considerations [McDonald and Plischke, Phys. Rev. B 27, 201 (1983)]. Our research on symmetry breaking in a strongly damped pendulum is relevant to an understanding of the phenomena of dynamic symmetry breaking and rectification in pure ac driven semiconductor superlattices.

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Держатели документа:
Univ Oulu, Dept Phys Sci, FIN-90014 Oulu, Finland
LV Kirenskii Inst Phys, Theory Nonlinear Proc Lab, Krasnoyarsk 660036, Russia
ИФ СО РАН
Department of Physical Sciences, P. O. Box 3000, Oulu FIN-90014, Finland
Theory of Nonlinear Processes Laboratory, Kirensky Institute of Physics, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Isohatala, J.; Alekseev, K. N.; Kurki, L. T.; Pietilainen, P.
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17.

Superconductor-semiconductor-superconductor junction network in bulk polycrystalline composites Y3/4Lu1/4Ba2Cu3O7 + Cu1-xLixO / M. I. Petrov [et al.] // Superconductor Science and Technology. - 2001. - Vol. 14, Is. 9. - P. 798-805, DOI 10.1088/0953-2048/14/9/333 . - ISSN 0953-2048
Кл.слова (ненормированные):
Critical current density (superconductivity) -- Josephson junction devices -- Polycrystalline materials -- Superconductivity -- Thermal effects -- Transport properties -- Superconductor junction networks -- Semiconductor junctions
Аннотация: Bulk Y3/4Lu1/4Ba2Cu3O7 + Cu1-xLixO composites with x = 0, 0.003 and 0.06 and varied volume content of Cu1-xLixO have been prepared. Analysis of the transport properties of the composites has shown that they can be represented as a network of superconductor-semiconductor-superconductor (S-Sm-S) weak links. The dependence of the critical current density on the normal resistance for the composites studied shows a behaviour similar to that for single Josephson junctions. The experimental temperature dependences of the critical current are qualitatively described in terms of a theory of S-Sm-S junctions that takes into account the Andreev reflection of carriers from the S-Sm and Sm-S interfaces.

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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18.

    Strong Electron Correlations Determine Energetic Stability and Electronic Properties of Er-Doped Goldberg-Type Silicon Quantum Dots / P. V. Avramov [et al.] // J. Phys. Chem. C. - 2009. - Vol. 113, Is. 36. - P. 15964-15968, DOI 10.1021/jp904996e. - Cited Reference Count: 43. - Гранты: This work was supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Tcchnology Agency (JST) and a collaborative RFBR-JSPS Grant 0902-92107-Phi. One of the authors (S.I.) also acknowledges support by the Program for Improvement of Research Environment for Young Researchers from Special Coordination Funds for Promoting Science and Technology (SCF) commissioned by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan. - Финансирующая организация: Japan Science and Tcchnology Agency (JST); RFBR-JSPS Grant; Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan . - SEP 10. - ISSN 1932-7447
Рубрики:
IMPLANTED POROUS SILICON
   AUGMENTED-WAVE METHOD
   MU M LUMINESCENCE
   SI NANOCRYSTALS
   THIN-FILMS
   BASIS-SET
   ERBIUM
   PHOTOLUMINESCENCE
   DENSITY
   PSEUDOPOTENTIALS
Кл.слова (ненормированные):
Ab initio -- Atomic structure -- Density functionals -- Empirical pseudo-potential -- Endohedrals -- Energetic stability -- Er-doped -- Erbium complexes -- Erbium ion -- Experimental data -- Hartree-fock -- Many body perturbation theory -- Mass centers -- Perturbation approach -- Plane wave -- Pseudopotentials -- Quantum Dot -- Silicon quantum dots -- Strong binding -- Strong electron correlations -- Theoretical result -- Crystal atomic structure -- Electron correlations -- Electron density measurement -- Electronic properties -- Electronic structure -- Erbium -- Perturbation techniques -- Structural optimization -- Semiconductor quantum dots
Аннотация: Atomic and electronic structures of Goldberg-type silicon quantum dots and their endohedral erbium complexes were studied using ab initio and plane wave pseudopotential density functional and Moller-Plesset many-body perturbation theories. During atomic structure optimizations, the erbium ions occupy mass centers inside the central hollows of quantum dots of different symmetries. It was found that strong electron correlations within the Er 4f shell taken into account by empirical pseudopotential and post-Hartree-Fock perturbation approaches are responsible for strong binding of Er ions to quantum dots. We elucidate the effects of symmetry and discuss theoretical results in comparison to available experimental data,

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http://pubs.acs.org/doi/abs/10.1021/jp904996e.
Держатели документа:
SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Natl Inst Adv Ind Sci & Technol, RICS, Tsukuba, Ibaraki 3058568, Japan
Nagoya Univ, Inst Adv Res, Nagoya, Aichi 4648602, Japan
Nagoya Univ, Dept Chem, Nagoya, Aichi 4648602, Japan
Kyoto Univ, Fukui Inst Fundamental Chem, Sakyo Ku, Kyoto 6068103, Japan

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Kuzubov, A. A.; Кузубов, Александр Александрович; Fedorov, D. G.; Irle, S.; Morokuma, K.
}
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19.

Spontaneous dc current generation in a resistively shunted semiconductor superlattice driven by a terahertz field / K. N. Alekseev [et al.] // Phys. Rev. Lett. - 1998. - Vol. 80, Is. 12. - P. 2669-2672, DOI 10.1103/PhysRevLett.80.2669. - Cited References: 21 . - ISSN 0031-9007

РУБ Physics, Multidisciplinary
Рубрики:
DYNAMIC LOCALIZATION
   BLOCH OSCILLATIONS
   ELECTRIC-FIELD
   THZ-FIELD
   PENDULUM
   CHAOS
   TIME
   SUPPRESSION
   SYSTEMS
Аннотация: We study a resistively shunted semiconductor superlattice subject to a high-frequency electric field. Using a balance equation approach that incorporates the influence of the electric circuit, we determine numerically a range of amplitude and frequency of the ac field for which a de bias and current are generated spontaneously and show that this region is likely accessible to current experiments. Our simulations reveal that the Bloch frequency corresponding to the spontaneous de bias is approximately an integer multiple of the ac field frequency.

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Держатели документа:
Univ Illinois, Dept Phys, Urbana, IL 61801 USA
NORDITA, DK-2100 Copenhagen O, Denmark
LV Kirensky Phys Inst, Theory Nonlinear Proc Lab, Krasnoyarsk 660036, Russia
Loughborough Univ Technol, Dept Phys, Loughborough LE11 3TU, Leics, England
ИФ СО РАН

Доп.точки доступа:
Alekseev, K. N.; Cannon, E. H.; McKinney, J. C.; Kusmartsev, F. V.; Campbell, D. K.
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20.

    Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure / A. S. Tarasov [et al.] // Semicond. Sci. Technol. - 2019. - Vol. 34, Is. 3. - Ст. 035024, DOI 10.1088/1361-6641/ab0327. - Cited References: 56. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project. 18-42-243022 and supported in part by the Russian Foundation for Basic Research by project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 "Nanostructures: physics, chemistry, biology, basics of technologies" . - ISSN 0268-1242. - ISSN 1361-6641
   Перевод заглавия: Спин-зависимая электрическая экстракция дырок из низколегированного p-Si через интерфейсные состояния в структуре Fe3Si/p-Si

РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
ALLOYS
Кл.слова (ненормированные):
spin accumulation -- interface states -- hybrid structures -- Hanle effect -- iron silicide
Аннотация: Spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM). Electrical characterization of a prepared Fe3Si/p-Si diode allowed the determination of possible reasons for the pronounced spin signal. Analysis of the forward bias I-V curve revealed a Schottky barrier at the Fe3Si/p-Si interface with a height of φBp = 0.57 eV. Then, using impedance spectroscopy, we observed interface states localized in the band gap of silicon with energy of E LS = 40 meV. Such states most probably cause the observed spin signal. We believe that in our experiment, spin-dependent hole extraction was performed via the interface states resulting in the minority spin accumulation in the silicon valence band. The observed effect paves the way to the development of different spintronic devices based on FM/SC structures without dielectric tunneling barriers.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Baron, F. A.; Барон, Филипп Алексеевич; Volkov, N. V.; Волков, Никита Валентинович; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [18-42-243022]; Russian Foundation for Basic Research [18-32-00035]; Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences [II.8.70]; Fundamental research program of the Presidium of the RAS [32]
}
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