Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (22)

Каталог журналов библиотеки ИФ СО РАН (2)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=Semiconductor<.>)

Общее количество найденных документов : 126
Показаны документы с 1 по 20

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : ZHIGALOV V. S., Vershinina L. I., FROLOV G. I.
Заглавие : MAGNETIC AND SEMICONDUCTOR PROPERTIES OF IRON NITRIDE FILMS
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1984. - Vol. 26, Is. 6. - P1887-1889. - ISSN 0367-3294
Примечания : Cited References: 4
WOS
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gluck M., Kolovsky A. R., Korsch H. J., Zimmer F.
Заглавие : Wannier-Stark resonances in semiconductor superlattices
Место публикации : Phys. Rev. B: AMERICAN PHYSICAL SOC, 2002. - Vol. 65, Is. 11. - Ст.115302. - ISSN 1098-0121, DOI 10.1103/PhysRevB.65.115302
Примечания : Cited References: 22
Предметные рубрики: ELECTRIC-FIELD
STATES
LADDERS
BREAKDOWN
BLOCH
LOCALIZATION
Аннотация: Wannier-Stark states for semiconductor superlattices in strong static fields, where the interband Landau-Zener tunneling cannot be neglected, are rigorously calculated. The lifetime of these metastable states was found to show multiscale oscillations as a function of the static field, which is explained by an interaction with above-barrier resonances. An equation, expressing the absorption spectrum of semiconductor superlattices in terms of the resonance Wannier-Stark states, is obtained and used to calculate the absorption spectrum in the region of high static fields.
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vetrov S.Ya., Avdeeva A. Y., Timofeev I. V.
Заглавие : Spectral properties of a one-dimensional photonic crystal with a resonant defect nanocomposite layer
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 113, Is. 5. - P.755-761. - ISSN 1063-7761, DOI 10.1134/S1063776111140093
Примечания : Cited References: 33. - This work was supported by projects nos. NSh-7810.2010.3, RNP.2.1.1.3455, 27.1 and 3.9.1 of the Russian Academy of Sciences, 5 and 144 of the Siberian Branch of the Russian Academy of Sciences, and State contract no. 02.740.11.0220 according to the program Research and Scientific-Pedagogical Brainpower of Innovated Russia.
Предметные рубрики: OPTICAL-PROPERTIES
SEMICONDUCTOR MICROCAVITIES
2ND-HARMONIC GENERATION
HETEROGENEOUS MEDIA
MODE
ENHANCEMENT
DISPERSION
SYSTEM
Аннотация: The spectral properties of a one-dimensional photonic crystal with a defect nanocomposite layer that consists of metallic nanoballs distributed in a transparent matrix and is characterized by an effective resonance permittivity are studied. The problem of calculating the transmission, reflection, and absorption spectra of p-polarized waves in such structures is solved for oblique incidence of light, and the spectral manifestation of defect-mode splitting as a function of the volume fraction of nanoballs and the structural parameters is studied. The splitting is found to depend substantially on the nanoball concentration in the defect, the defect layer thickness, and the angle of incidence. The angle of incidence is found at which the resonance frequency of the nanocomposite is located near the edge of the bandgap or falls in the frequency region of a continuous spectrum. The resonance situation appearing in this case results in an additional transmission band or an additional bandgap in the transmission spectrum.
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Mitskan V. A., Shustin M. S.
Заглавие : Ground-State Fermion Parity and Caloric Properties of a Superconducting Nanowire
Место публикации : J. Exp. Theor. Phys. - 2019. - Vol. 129, Is. 3. - P.426-437. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776119080144
Примечания : Cited References: 74. - This work was supported by the Russian Foundation for Basic Research (project nos. 16-02-00073, 18-32-00443, 18-42-243017, 18-42-243018), the Government of the Krasnoyarsk Kray, the Krasnoyarsk Kray Science Foundation within the scientific projects “Contact Phenomena and Magnetic Disorder in the Formation and Detection of Topologically Protected Edge States in Semiconductor Nanostructures” (project no. 18-42-243018), “Manifestation of Coulomb Interactions and Bounded-Geometry Effects in the Properties of Topological Edge States of Nanostructures with Spin–Orbit Interactions” (project no. 18-42-243017). One of us (Sh. M. S.) thanks the Council for Grants of the Russian President (project nos. MK-3594.2018.2 and MK-3722.2018.2).
Аннотация: Abstract: The ground-state structure and fermion parity have been determined for a semiconductor nano-wire with a strong Rashba spin–orbit interaction and proximity-induced superconductivity placed in an external magnetic field under periodic boundary conditions. Allowance for the open boundaries is shown to cause the topologically nontrivial parameter region to be partitioned into a set of subregions with a different ground-state fermionic parity. This peculiarity is related to the emergence of edge modes with nonmonotonically changing excitation energies in the system as its parameters change. At the quantum transition point, at which the ground-state fermionic parity changes, the edge-mode energy is zero. The magneto- and electrocaloric effects are shown to be effective characteristics that allow the series of quantum transitions in an open nanowire to be identified experimentally. These effects at low temperatures exhibit an anomalous behavior in the parameter region for which topologically stable Majorana modes are realized in long nanowires. © 2019, Pleiades Publishing, Inc.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Shaikhutdinov K. A., Khrustalev B. P., Aleksandrov K. S.
Заглавие : Transport properties of high-temperature superconductor plus semiconductor composites with different carrier concentration
Место публикации : Phys. Solid State: American Institute of Physics, 1997. - Vol. 39, Is. 5. - P.735-740. - ISSN 1063-7834, DOI 10.1134/1.1129959
Примечания : Cited References: 26
Предметные рубрики: CRITICAL CURRENTS
WEAK LINKS
JUNCTIONS
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity rho(T), critical current density J(c)(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). (C) 1997 American Institute of Physics.
WOS
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Петров, Михаил Иванович, Balaev D. A., Шайхутдинов, Кирилл Александрович, Khrustalev B. P., Aleksandrov K. S.
Заглавие : Transport properties of high-temperature superconductor + semiconductor composites with different carrier concentration
Место публикации : Physics of the Solid State. - 1997. - Vol. 39, Is. 5. - P.735-740. - ISSN 1063-7834
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity p(T), critical current density Jc(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). В© 1997 American Institute of Physics.
Scopus
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Shaikhutdinov K. A., Khrustalev B. P., Aleksandrov K. S.
Заглавие : Transport properties of composites high temperature superconductor + semiconductor with different carrier concentration
Место публикации : Physica C-Superconductivity and its Applications. - 1997. - Vol. 282, Is. PART 4. - P.2449-2450. - ISSN 0921-4534
Ключевые слова (''Своб.индексиров.''): carrier concentration--critical current density (superconductivity)--high temperature superconductors--semiconductor materials--thermal effects--transport properties--superconductor semiconductor superconductor junctions--composite materials
Аннотация: Composites HTSC + semiconductor with different carrier concentrations were prepared as a model of Josephson type contacts. Experimental temperature dependences of the critical current density Jc(T) in the composites are presented. The best congruence of experiment with theory was reached for the Schussler-Kummel consideration of Andreev scattering in S-Sm-S (S-superconductor, Sm-semiconductor) junctions.
Scopus
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kobyakov A. V., Turpanov I. A., Patrin G. S., Yushkov V. I., Yarikov S. A., Volochaev M. N., Zhivaya Ya. A.
Заглавие : The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect
Коллективы : Euro-Asian Symposium "Trends in MAGnetism"
Место публикации : J. Phys. Conf. Ser. - 2019. - Vol. 1389, Is. 1. - Ст.012028. - ISSN 1742-6588, DOI 10.1088/1742-6596/1389/1/012028. - ISSN 1742-6596 (eISSN)
Примечания : Cited References: 13. - These studies are conducted with financial support from the Russian Foundation for Basic Research (grant No.18-02-00161-a).
Аннотация: CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the temperature greater than 100K.
Смотреть статью,
Читать в сети ИФ,
Scopus,
WOS
Найти похожие

10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Popkov S. I., Shaihutdinov K. A., Petrov M. I.
Заглавие : The mechanisms responsible for broadening of the resistive transition under magnetic field in the Josephson junction network realized in bulk YBCO+CuO composites
Коллективы : International Workshop on Weak Superconductivity
Разночтения заглавия :авие SCOPUS: The mechanisms responsible for broadening of the resistive transition under magnetic field in the Josephson junction network realized in bulk YBCO + CuO composites
Место публикации : Physica C. - 2006. - Vol. 435, Is. 1-2. - P.12-15. - ISSN 0921-4534, DOI 10.1016/j.physc.2006.01.008
Примечания : Cited References: 15
Предметные рубрики: SUPERCONDUCTORS
MODEL
Ключевые слова (''Своб.индексиров.''): josephson network--ybco plus cuo composites--dissipation--magnetic field--dissipation--josephson network--magnetic field--ybco + cuo composites--composite materials--copper compounds--mathematical models--phase transitions--semiconductor junctions--yttrium compounds--creep model--josephson network--ybco + cuo composites--magnetic field effects
Аннотация: The experimental results of the effect of the magnetic field (up to 60 kOe) on the broadening of the resistive transition of bulk composites Y3/4Lu1/4Ba2CU3O7 (YBCO) + CuO are presented. These composites represent the network of the tunnel-type Josephson junctions where the copper oxide acts as a material forming barriers between YBCO crystallites. The mechanisms responsible for broadening of the resistive transition under magnetic field are discussed. The analysis of experimental R(7) dependences have shown that in the low field range 0-10(2) Oe, the R(7) dependences are described well by the Ambegaokar-Halperin (AH) model. In the range 10(3)-6 x 10(4) Oe, the dissipation follows Arrhenius law R similar to exp(-U(H)/k(B)T) characteristic for thermally activated flux creep model. In the range H similar to 10(2)-10(3), the crossover from AH to flux creep dissipation mechanisms occurs. (c) 2006 Elsevier B.V. All rights reserved.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Har'kov A. M., Gorev M. V., Balaev A. D., Eremin E. V., Bovina A. F.
Заглавие : The magnetoelastic effect in CoxMn1-xS solid solutions
Коллективы :
Разночтения заглавия :авие SCOPUS: The magnetoelastic effect in Cox Mn1 - x S solid solutions
Место публикации : Solid State Commun.: PERGAMON-ELSEVIER SCIENCE LTD, 2010. - Vol. 150, Is. 13-14. - P564-567. - ISSN 0038-1098, DOI 10.1016/j.ssc.2010.01.009
Примечания : Cited References: 13. - This work was supported by the Russian Foundation for Basic Research projects no. 08-02-00364-a, no. 08-02-90031, no. F08037, F08-229, and no. 09-02-00554-a.
Предметные рубрики: YVO3 SINGLE-CRYSTAL
SPIN-STATE
TRANSITION
TRANSPORT
PHYSICS
LACOO3
Ключевые слова (''Своб.индексиров.''): semiconductors--x-ray scattering--galvanomagnetic effects--thermal expansion--semiconductors--x-ray scattering--galvanomagnetic effects--thermal expansion--semiconductors--x-ray scattering--coefficient of thermal expansion--magnetoelastic effects--orbital ordering--temperature hysteresis--temperature range--zero magnetic fields--crystallization--electric resistance--magnetic field effects--magnetoresistance--manganese--manganese compounds--neon--organic polymers--scattering--semiconductor quantum dots--solid solutions--solidification--thermal stress--x ray scattering--thermal expansion
Аннотация: The magnetization of cation-substituted CoxMn(1-x)S sulfides upon cooling in zero magnetic field and in a field in the temperature range 4-300 K has been measured and the resistance versus magnetic field (up to 10 kOe) dependences have been obtained. Magnetoresistance and temperature hysteresis of magnetization versus prehistory are found at the magnetic field H 0.1 T and at T 240 K. The interrelation between the magnetic and elastic subsystems of the CoxMn1-xS solid solutions has been established. A jump in the coefficient of thermal expansion is observed at the Neel temperature. The features of the physical properties are explained by orbital ordering. (C) 2010 Elsevier Ltd. All rights reserved.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

12.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kobyakov A. V., Turpanov I. A., Patrin G. S., Yushkov V. I., Yarikov S. A., Volochaev M. N., Zhivaya Ya. A.
Заглавие : The influence of the semiconductor layer on the magnetic properties in a three-layer structure CoNi/Si/FeNi
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 1. - Ст.C.P30. - P.319. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 2. - These studies are conducted with financial support from the Russian Foundation for Basic Research (grant # 18-02-00161-a)
Материалы симпозиума,
Читать в сети ИФ
Найти похожие

13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Balashov V. V., Korobtsov V .V.
Заглавие : The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier
Коллективы : Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
Место публикации : Appl. Phys. Lett.: American Institute of Physics, 2014. - Vol. 104, Is. 22. - Ст.222406. - ISSN 0003-6951, DOI 10.1063/1.4881715. - ISSN 1077-3118
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043.
Предметные рубрики: MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.
Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ
Найти похожие

14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Sitnikov M. N., Kretinin V. V., Galyas, A., I, Yanushkevich, K., I
Заглавие : The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films
Коллективы : Russian Foundation for Basic Research (RFBR) [18-52-00009 Bel_a, 18-32-00079 mol_a, 18-42-240001 r_a]; [3.5743.2017/6.7]
Место публикации : Semicond. Sci. Technol. - 2018. - Vol. 33, Is. 8. - Ст.085006. - ISSN 0268-1242, DOI 10.1088/1361-6641/aace44. - ISSN 1361-6641(eISSN)
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project No 18-52-00009 Bel_a; No 18-32-00079 mol_a; No 18-42-240001 r_a; the state order No 3.5743.2017/6.7.
Предметные рубрики: NEUTRON-SCATTERING
SURFACE-STATES
MNTE
CONDUCTIVITY
MECHANISM
Ключевые слова (''Своб.индексиров.''): polycrystalline films--magnetoresistance--impedance--polaron--magnetic--properties--thermoelectric
Аннотация: The correlation between the dc and ac electrical resistance and the structural, magnetic, and thermoelectric properties of polycrystalline MnSe1−X Te Х (0.3 ≤ X ≤ 0.4) manganese chalcogenide films in the temperature range of 80–400 K has been investigated. Inhomogeneous electronic states and transitions between them accompanied by structural lattice deformations have been found at temperatures including the Neel temperature region. The magnetic susceptibility maximum above the Neel temperature in a magnetic field of 8.6 kOe has been observed. Temperature ranges of the coexistence of two types of electrically inhomogeneous states have been established by impedance spectroscopy in the frequency range of 0.1–1000 kHz and the change of the hopping conductivity for diffusion one accompanied by the magnetic susceptibility minimum has been found. The magnetoresistance in magnetic fields of up to 12 kОе has been established. It has been revealed that the thermopower and magnetoresistance change its sign upon heating. The experimental data are explained using a spin polaron model with the localization of polarons and formation of the electron phase-separation. The alternation of magnetoresistance in sign is attributed to the ferromagnetic orbital ordering of electrons and the negative magnetoresistance is explained by suppression of spin fluctuations in a magnetic field.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : CHERNOV V. K., GAVRICHKOV V. A., IVANOVA N. B., VEISIG G. S., BOYARSHINOV Y. V.
Заглавие : TEMPERATURE-DEPENDENCE OF MOBILITY IN MAGNETIC SEMICONDUCTOR HGCR2SE4
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1986. - Vol. 28, Is. 1. - P289-291. - ISSN 0367-3294
Примечания : Cited References: 8
WOS
Найти похожие

16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Isohatala J., Alekseev K. N., Kurki L. T., Pietilainen P.
Заглавие : Symmetry breaking in a driven and strongly damped pendulum
Место публикации : Phys. Rev. E: AMERICAN PHYSICAL SOC, 2005. - Vol. 71, Is. 6. - Ст.66206. - ISSN 1539-3755, DOI 10.1103/PhysRevE.71.066206
Примечания : Cited References: 37
Предметные рубрики: DC VOLTAGE GENERATION
SEMICONDUCTOR SUPERLATTICES
JOSEPHSON-JUNCTIONS
BLOCH OSCILLATIONS
FORCED PENDULUM
CHAOS
FREQUENCY
SYSTEMS
RECTIFICATION
STANDARD
Ключевые слова (''Своб.индексиров.''): periodically driven pendulums--symmetry breaking--bifurcation (mathematics)--damping--dynamics--nonlinear systems--semiconductor superlattices--pendulums
Аннотация: We examine the conditions for appearance of a symmetry breaking bifurcation in damped and periodically driven pendulums in the case of strong damping. We show that symmetry breaking, unlike other nonlinear phenomena, can exist at high dissipation. We prove that symmetry breaking phases exist between phases of symmetric normal and symmetric inverted oscillations. We find that symmetry broken solutions occupy a smaller region of the pendulum's parameter space in comparison to the statements made in earlier considerations [McDonald and Plischke, Phys. Rev. B 27, 201 (1983)]. Our research on symmetry breaking in a strongly damped pendulum is relevant to an understanding of the phenomena of dynamic symmetry breaking and rectification in pure ac driven semiconductor superlattices.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Shaikhutdinov K. A., Aleksandrov K. S.
Заглавие : Superconductor-semiconductor-superconductor junction network in bulk polycrystalline composites Y3/4Lu1/4Ba2Cu3O7 + Cu1-xLixO
Место публикации : Superconductor Science and Technology. - 2001. - Vol. 14, Is. 9. - P.798-805. - ISSN 0953-2048, DOI 10.1088/0953-2048/14/9/333
Ключевые слова (''Своб.индексиров.''): critical current density (superconductivity)--josephson junction devices--polycrystalline materials--superconductivity--thermal effects--transport properties--superconductor junction networks--semiconductor junctions
Аннотация: Bulk Y3/4Lu1/4Ba2Cu3O7 + Cu1-xLixO composites with x = 0, 0.003 and 0.06 and varied volume content of Cu1-xLixO have been prepared. Analysis of the transport properties of the composites has shown that they can be represented as a network of superconductor-semiconductor-superconductor (S-Sm-S) weak links. The dependence of the critical current density on the normal resistance for the composites studied shows a behaviour similar to that for single Josephson junctions. The experimental temperature dependences of the critical current are qualitatively described in terms of a theory of S-Sm-S junctions that takes into account the Andreev reflection of carriers from the S-Sm and Sm-S interfaces.
Scopus,
Читать в сети ИФ
Найти похожие

18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Kuzubov A. A., Fedorov D. G., Irle S., Morokuma K.
Заглавие : Strong Electron Correlations Determine Energetic Stability and Electronic Properties of Er-Doped Goldberg-Type Silicon Quantum Dots
Место публикации : J. Phys. Chem. C. - 2009. - Vol. 113, Is. 36. - P.15964-15968. - SEP 10. - ISSN 1932-7447, DOI 10.1021/jp904996e
Примечания : Cited Reference Count: 43. - Гранты: This work was supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Tcchnology Agency (JST) and a collaborative RFBR-JSPS Grant 0902-92107-Phi. One of the authors (S.I.) also acknowledges support by the Program for Improvement of Research Environment for Young Researchers from Special Coordination Funds for Promoting Science and Technology (SCF) commissioned by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan.Финансирующая организация: Japan Science and Tcchnology Agency (JST); RFBR-JSPS Grant; Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan
Предметные рубрики: IMPLANTED POROUS SILICON
AUGMENTED-WAVE METHOD
MU M LUMINESCENCE
SI NANOCRYSTALS
THIN-FILMS
BASIS-SET
ERBIUM
PHOTOLUMINESCENCE
DENSITY
PSEUDOPOTENTIALS
Ключевые слова (''Своб.индексиров.''): ab initio--atomic structure--density functionals--empirical pseudo-potential--endohedrals--energetic stability--er-doped--erbium complexes--erbium ion--experimental data--hartree-fock--many body perturbation theory--mass centers--perturbation approach--plane wave--pseudopotentials--quantum dot--silicon quantum dots--strong binding--strong electron correlations--theoretical result--crystal atomic structure--electron correlations--electron density measurement--electronic properties--electronic structure--erbium--perturbation techniques--structural optimization--semiconductor quantum dots
Аннотация: Atomic and electronic structures of Goldberg-type silicon quantum dots and their endohedral erbium complexes were studied using ab initio and plane wave pseudopotential density functional and Moller-Plesset many-body perturbation theories. During atomic structure optimizations, the erbium ions occupy mass centers inside the central hollows of quantum dots of different symmetries. It was found that strong electron correlations within the Er 4f shell taken into account by empirical pseudopotential and post-Hartree-Fock perturbation approaches are responsible for strong binding of Er ions to quantum dots. We elucidate the effects of symmetry and discuss theoretical results in comparison to available experimental data,
WOS,
Scopus,
eLibrary,
http://pubs.acs.org/doi/abs/10.1021/jp904996e.
Найти похожие

19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Alekseev K. N., Cannon E. H., McKinney J. C., Kusmartsev F. V., Campbell D. K.
Заглавие : Spontaneous dc current generation in a resistively shunted semiconductor superlattice driven by a terahertz field
Место публикации : Phys. Rev. Lett.: AMERICAN PHYSICAL SOC, 1998. - Vol. 80, Is. 12. - P2669-2672. - ISSN 0031-9007, DOI 10.1103/PhysRevLett.80.2669
Примечания : Cited References: 21
Предметные рубрики: DYNAMIC LOCALIZATION
BLOCH OSCILLATIONS
ELECTRIC-FIELD
THZ-FIELD
PENDULUM
CHAOS
TIME
SUPPRESSION
SYSTEMS
Аннотация: We study a resistively shunted semiconductor superlattice subject to a high-frequency electric field. Using a balance equation approach that incorporates the influence of the electric circuit, we determine numerically a range of amplitude and frequency of the ac field for which a de bias and current are generated spontaneously and show that this region is likely accessible to current experiments. Our simulations reveal that the Bloch frequency corresponding to the spontaneous de bias is approximately an integer multiple of the ac field frequency.
WOS,
Читать в сети ИФ
Найти похожие

20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Rautskii M. V., Bondarev I. A., Smolyakov D. A., Tarasov I. A., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G., Baron F. A., Volkov N. V.
Заглавие : Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [18-42-243022]; Russian Foundation for Basic Research [18-32-00035]; Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences [II.8.70]; Fundamental research program of the Presidium of the RAS [32]
Место публикации : Semicond. Sci. Technol. - 2019. - Vol. 34, Is. 3. - Ст.035024. - ISSN 0268-1242, DOI 10.1088/1361-6641/ab0327. - ISSN 1361-6641(eISSN)
Примечания : Cited References: 56. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project. 18-42-243022 and supported in part by the Russian Foundation for Basic Research by project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 "Nanostructures: physics, chemistry, biology, basics of technologies"
Предметные рубрики: ALLOYS
Ключевые слова (''Своб.индексиров.''): spin accumulation--interface states--hybrid structures--hanle effect--iron silicide
Аннотация: Spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM). Electrical characterization of a prepared Fe3Si/p-Si diode allowed the determination of possible reasons for the pronounced spin signal. Analysis of the forward bias I-V curve revealed a Schottky barrier at the Fe3Si/p-Si interface with a height of φBp = 0.57 eV. Then, using impedance spectroscopy, we observed interface states localized in the band gap of silicon with energy of E LS = 40 meV. Such states most probably cause the observed spin signal. We believe that in our experiment, spin-dependent hole extraction was performed via the interface states resulting in the minority spin accumulation in the silicon valence band. The observed effect paves the way to the development of different spintronic devices based on FM/SC structures without dielectric tunneling barriers.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие