Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Solovyov L. A., Matsynin A. A., Balashov Yu. Yu., Nemtsev I. V., Shabanov A. V., Bondarenko G. N.
Заглавие : Solid-state synthesis, dewetting, and magnetic and structural characterization of interfacial FexSn1−x layers in Sn/Fe(001) thin films
Место публикации : J. Mater. Res. - 2021. - Vol. 36, Is. 15. - P.3121-3133. - ISSN 08842914 (ISSN), DOI 10.1557/s43578-021-00312-4
Примечания : Cited References: 43. - This work was supported by the Russian Foundation for Basic Research together with the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund of Science (Grant #19-43-240003). The work is partially based upon the experiments performed on Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS»
Аннотация: The phase formation sequences in 9Sn/91Fe(001) and 25Sn/75Fe(001) bilayers during thin-film solid-state reactions up to 800°C were investigated using X-ray diffraction, the torque method, and scanning electron microscopy. In both samples, FeSn2, FeSn, α-Fe1−xSnx, Fe5Sn3, α-Fe, and β-Sn were sequentially formed at the initiation temperatures Tini ~ 150°C, ~ 300°C, ~ 550°C, ~ 600°C, and ~ 700°C, respectively. Low-temperature transformations were predicted at temperatures TK1 ~ 150°C and TK2 ~ 300°C, which are absent in the phase equilibrium diagram of the Fe–Sn system. Solid-state dewetting of the 9Sn/91Fe(001) and 25Sn/75Fe(001) bilayers started at temperatures above 550°C. Overall, this work sheds new light on general chemical mechanisms governing the synthesis of intermetallic phases in Sn/Fe(001) thin films, the phase transformations, and the evolution of the dewetting process of FexSn1−x films.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Zobov V. E., Pichkovskiy I. S.
Заглавие : Sequences of selective rotation operators for three group clustering on qutrits by means quantum annealing
Коллективы : "Micro- and Nano-Electronics", International Conference, "Микро- и наноэлектроника", международная конференция, Квантовая информатика, симпозиум, Российская академия наук, Физико-технологический институт имени К.А. Валиева РАН
Разночтения заглавия :Загл. обл.: IС "Micro- and Nanoelectronics" (ICMNE-2021) with the extended session “Quantum Informatics” (QI-2021)
Место публикации : Proceedings of the International Conference "Micro- and Nanoelectronics – 2021". ICMNE – 2021. - 2021. - Ст.q3-02. - P.149
Примечания : Cited References: 4
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zobov V. E., Pichkovskiy I. S.
Заглавие : Clustering by quantum annealing on the three-level quantum elements qutrits
Место публикации : Quantum Inf. Process. - 2022. - Vol. 21, Is. 4. - Ст.144. - ISSN 15700755 (ISSN), DOI 10.1007/s11128-022-03482-0
Примечания : Cited References: 28. - This study was supported by the Theoretical Physics and Mathematics Advancement Foundation “BASIS” #20-1-5-41-1. We are grateful for their trust and assistance in research
Аннотация: Clustering is grouping of data by the proximity of some properties. We report on the possibility of increasing the efficiency of clustering of points in a plane using artificial quantum neural networks after the replacement of the two-level neurons called qubits represented by the spins S = 1/2 by the three-level neurons called qutrits represented by the spins S = 1. The problem has been solved by the slow adiabatic change of the Hamiltonian in time. The methods for controlling a qutrit system using projection operators have been developed and the numerical simulation has been performed. The Hamiltonians for two well-known clustering methods, one-hot encoding and k-means, have been built. The first method has been used to partition a set of six points into three or two clusters and the second method, to partition a set of nine points into three clusters and seven points into four clusters. The simulation has shown that the clustering problem can be effectively solved on qutrits represented by the spins S = 1. The advantages of clustering on qutrits over that on qubits have been demonstrated. In particular, the number of qutrits required to represent N data points is smaller than the number of qubits by a factor of log 2N/ log 3N. For qutrits, the simplest is to partition the data points into three clusters rather than two ones. At the data partition into more than three clusters, it has been proposed to number the clusters by the numbers of states of the corresponding multi-spin subsystems, instead of using the numbers of individual spins. This reduces even more the number of qutrits (Nlog 3K instead of NK) required to implement the algorithm.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zobov V. E., Pichkovskiy I. S.
Заглавие : Associative memory on qutrits by means of quantum annealing
Место публикации : Quantum Inf. Process. - 2020. - Vol. 19, Is. 9. - Ст.342. - ISSN 1570-0755, DOI 10.1007/s11128-020-02851-x. - ISSN 1573-1332(eISSN)
Примечания : Cited References: 23
Аннотация: When associative memory is implemented on the well-studied Hopfield network, patterns are recorded in the interaction constants between binary neurons. These constants are chosen so that each pattern should have its own minimum energy of the system described by the Ising model. In the quantum version of the Hopfield network, it was proposed to recall such states by the adiabatic change of the Hamiltonian in time. Qubits, quantum elements with two states, for example, spins with S=1/2 were considered as neurons. In this paper, for the first time, we study the function of associative memory using three-level quantum elements-qutrits, represented by spins with S=1. We record patterns with the help of projection operators. This choice is due to the need to operate with a state with a zero spin projection, whose interaction with the magnetic field vanishes. We recall the state corresponding to one of the patterns recorded in the memory, or superposition of such states by means of quantum annealing. To equalize the probabilities of finding the system in different states of superposition, an auxiliary Hamiltonian is proposed, which is turned off at the end of evolution. Simulations were performed on two and three qutrits and an increase in the memory capacity after replacing qubits with qutrits was shown.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belousov A. L., Patrusheva T. N., Karacharov A. A., Ivanenko A. A., Kirik S. D., Khol'kin A. I.
Заглавие : Amorphous and Crystalline Nickel Oxide Films Obtained by the Extraction-Pyrolysis Method for Electrochromic Cells
Коллективы : program "Research and Development for the Priority Areas of the Russian Science-and-Technology Sector for 2014-2020" [075-15-2019-1843]; [RFMEFI60719X0307]
Место публикации : Theor. Found. Chem. Eng. - 2020. - Vol. 54, Is. 4. - P.699-705. - ISSN 0040-5795, DOI 10.1134/S0040579520040041. - ISSN 1608-3431(eISSN)
Примечания : Cited References: 8. - This work was performed as part of the program "Research and Development for the Priority Areas of the Russian Science-and-Technology Sector for 2014-2020"; Grant Agreement no. 075-15-2019-1843; the Project Unique Identifier RFMEFI60719X0307
Предметные рубрики: NIO THIN-FILMS
Аннотация: This paper reports studies of thin films of nickel oxide obtained by the extraction–pyrolysis method on glass and quartz substrates at temperatures of 380–600°C. The films have been characterized by atomic force microscopy and X-ray diffraction. It is shown that amorphous and crystalline nickel oxide films are formed on the glass. The grain size depends on the annealing temperature, while increased annealing temperatures lead to recrystallization and a decrease in the grain size in NiO films from 130 to 35 nm.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Pichkovskiy I. S., Zobov V. E., Alekseenko I. V.
Заглавие : Modeling of quantum annealing in the ternary system: the factorization of the number 551
Коллективы : "Современные проблемы радиоэлектроники", всероссийская научно-техническая конференция, посвященная 123-й годовщине Дня радио, Сибирский федеральный университет
Место публикации : Соврем. проблемы радиоэлектроники: сб. науч. трудов : электронное издание/ ред. А. И. Громыко. - Красноярск: СФУ, 2018. - С. 496-499. - ISBN 978-5-7638-3902-9
Примечания : Библиогр.: 6
Аннотация: In this paper we present the decision of one of the most hard combination problem with qutrit, factorization number. We present two factors that form this number. Knowing the length of one of them, the problem is simplified and can be resolved. Our work solves the problem of factorization of number 551 with the length of multiplier, which equals 4.
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Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Zobov V. E., Pichkovskiy I. S.
Заглавие : Sequences of selective rotation operators for three group clustering on qutrits by means of quantum annealing
Коллективы : International Conference on Micro- and Nano-Electronics
Место публикации : Proc. SPIE. - 2022. - Vol. 12157. - Ст.121571Z. - , DOI 10.1117/12.2622732
Примечания : Cited References: 25. - This work was supported by a grant from the Fund for the Development of Theoretical Physics and Mathematics "Basis" # 20-1-5-41-1
Аннотация: Recently, it was demonstrated that the clustering considered in this articlec, which consists in partitioning a set of data points into subsets depending on the proximity of some properties, can be performed using quantum annealing on a system of two-level quantum elements - qubits. In previous work, we proposed to pass from qubits to qutrits - three-level quantum elements showed the advantages of such a replacement and obtained a time-dependent effective Hamiltonian. In the present paper, we have found a sequence of selective rotation operators that allows one to realize adiabatic evolution with this effective Hamiltonian in the discrete-time approximation. On five qutrits, represented by spins S = 1, we performed a simulation of clustering a set of six points on a plane into three groups by means of quantum annealing.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Sheftel E. N., Iskhakov R. S., Komogortsev S. V., Sidorenko P. K., Utitskikh S. I., Perov N. S.
Заглавие : Effects of annealing on magnetic properties and structural features of nanocrystalline Fe79Zr10N11 films
Коллективы : Moscow International Symposium on Magnetism, Московский государственный университет им. М.В. Ломоносова, Российский фонд фундаментальных исследований
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2008): June 20-25, 2008, Moscow : book of abstract. - 2008. - Ст.25PO-13-10. - p.750-751
Примечания : Библиогр.: 3. - Support by RFFI grant 08–03–00104–a is acknowledged
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Мацынин, Алексей Александрович, Комогорцев, Сергей Викторович, Быкова, Людмила Евгеньевна, Еремин, Леонид Аркадьевич
Заглавие : Исследование фазовых превращений в тонкопленочных структурах Sn/Co при вакуумном отжиге
Коллективы : Байкальская международная конференция "Магнитные материалы. Новые технологии", "Магнитные материалы. Новые технологии", Байкальская международная конференция, "Magnetic materials. New tecnologies", Baikal International Conference, Иркутский государственный университет
Место публикации : Магнитные материалы. Новые технологии: тез. докл. IX Байкал. междунар. конф. BICMM-2023/ чл. прогр. ком.: S. S. Aplesnin [et al.] ; чл. орг. ком. R. S. Iskhakov [et al.]. - Иркутск, 2023. - С. 125-126. - ISBN 978-5-9624-2178-0, DOI 10.26516/978-5-9624-2178-0.2023.1-207
Примечания : Библиогр.: 3
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Eremin L. A., Matsynin A. A., Balashov Yu. Yu., Myagkov V. G., Zhigalov V. S., Bykova L. E., Komogortsev S. V.
Заглавие : The phases formed in Sn/Co thin bilayer upon heating
Колич.характеристики :5 с
Место публикации : J. Solid State Chem. - 2024. - Vol. 334. - Ст.124693. - ISSN 00224596 (ISSN), DOI 10.1016/j.jssc.2024.124693. - ISSN 1095726X (eISSN)
Примечания : Cited References: 33
Аннотация: The structure and phases formed in Sn/Co thin films are interesting both from the solid-state chemistry point of view and due to applications of such a metallic bilayer. The phases forming in thin films Sn/Co obtained by thermal vacuum evaporation on two different substrates SiO2 and MgO(100) at different annealing temperatures have been studied. Annealing above 110°С results in intermetallics formation in the films. The hcp-cobalt is grown in the films on SiO2 substrate, and the fcc-Co is observed on MgO(100) substrate. It is found that the stable α-Co3Sn2 intermetallic is formed at higher annealing temperature in film on MgO(100) substrate. We show that transformations related to mass transfer in the Sn/Co bilayers were up to 500°С and were finished upon reaching the thermodynamically equilibrium phase composition at this temperature.
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