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Rotter, I.
Zeros in single-channel transmission through double quantum dots / I. . Rotter, A. F. Sadreev // Phys. Rev. E. - 2005. - Vol. 71, Is. 4. - Ст. 46204, DOI 10.1103/PhysRevE.71.046204. - Cited References: 28 . - ISSN 1063-651X

РУБ Physics, Fluids & Plasmas + Physics, Mathematical
Рубрики:
PHASE EVOLUTION
   RESONANCE
   TRANSPORT
   SYSTEMS
Кл.слова (ненормированные):
Fano interference -- Fano resonances -- Overlapping resonances -- Transmission amplitude -- Channel capacity -- Eigenvalues and eigenfunctions -- Function evaluation -- Hamiltonians -- Mathematical models -- Mathematical operators -- Matrix algebra -- Resonance -- Signal interference -- Semiconductor quantum dots
Аннотация: By using a simple model we consider single-channel transmission through a double quantum dot that consists of two single dots coupled by a wire of finite length L. Each of the two single dots is characterized by a few energy levels only, and the wire is assumed to have only one level whose energy depends on the length L. The transmission is described by using S matrix theory and the effective non-Hermitian Hamilton operator H-eff of the system. The decay widths of the eigenstates of H-eff depend strongly on energy. The model explains the origin of the transmission zeros of the double dot that is considered by us. Mostly, they are caused by (destructive) interferences between neighboring levels and are of first order. When, however, both single dots are identical and their transmission zeros are of first order, those of the double dot are of second order. First-order transmission zeros cause phase jumps of the transmission amplitude by pi, while there are no phase jumps related to second-order transmission zeros. In this latter case, a phase jump occurs due to the fact that the width of one of the states vanishes when crossing the energy of the transmission zero. The parameter dependence of the widths of the resonance states is determined by the spectral properties of the two single dots.

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Держатели документа:
Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
Astafev Krasnoyarsk Pedag Univ, Krasnoyarsk 660049, Russia
ИФ СО РАН
Max-Planck-Inst. Phys. Komplexer S., D-01187 Dresden, Germany
Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Dept. of Phys. and Msrmt. Technology, Linkoping University, S-58183 Linkoping, Sweden
Astaf'ev Krasnoyarsk Pedagogical U., Krasnoyarsk, 660049, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович
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    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
}
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Wannier-Stark resonances in semiconductor superlattices / M. . Gluck [et al.] // Phys. Rev. B. - 2002. - Vol. 65, Is. 11. - Ст. 115302, DOI 10.1103/PhysRevB.65.115302. - Cited References: 22 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
ELECTRIC-FIELD
   STATES
   LADDERS
   BREAKDOWN
   BLOCH
   LOCALIZATION
Аннотация: Wannier-Stark states for semiconductor superlattices in strong static fields, where the interband Landau-Zener tunneling cannot be neglected, are rigorously calculated. The lifetime of these metastable states was found to show multiscale oscillations as a function of the static field, which is explained by an interaction with above-barrier resonances. An equation, expressing the absorption spectrum of semiconductor superlattices in terms of the resonance Wannier-Stark states, is obtained and used to calculate the absorption spectrum in the region of high static fields.

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Держатели документа:
Univ Kaiserslautern, Fachbereich Phys, D-67653 Kaiserslautern, Germany
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Gluck, M.; Kolovsky, A. R.; Коловский, Андрей Радиевич; Korsch, H. J.; Zimmer, F.
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Gluck, M.
Wannier-Stark resonances in optical and semiconductor superlattices / M. . Gluck, A. R. Kolovsky, H. J. Korsch // Phys. Rep.-Rev. Sec. Phys. Lett. - 2002. - Vol. 366, Is. 3. - P. 103-182, DOI 10.1016/S0370-1573(02)00142-4. - Cited References: 234 . - ISSN 0370-1573

РУБ Physics, Multidisciplinary
Рубрики:
UNIFORM ELECTRIC-FIELD
   QUANTUM CHAOTIC SCATTERING
   FRANZ-KELDYSH OSCILLATIONS
   METAL-INSULATOR-TRANSITION
   ALTERNATING SITE ENERGIES
   GAAS-ALAS SUPERLATTICES
   RANDOM UNITARY MATRICES
   WAVE-GUIDE ARRAYS
   BLOCH OSCILLATIONS
   PERTURBATION-THEORY
Кл.слова (ненормированные):
Wannier-Stark resonances -- semiconductor superlattices -- optical lattices -- resonance statistics -- quantum chaos -- Optical lattices -- Quantum chaos -- Resonances statistics -- Semiconductor superlattices -- Wannier-Stark resonances
Аннотация: In this work, we discuss the resonance states of a quantum particle in a periodic potential plus a static force. Originally, this problem was formulated for a crystal electron subject to a static electric field and it is nowadays known as the Wannier-Stark problem. We describe a novel approach to the Wannier-Stark problem developed in recent years. This approach allows to compute the complex energy spectrum of a Wannier-Stark system as the poles of a rigorously constructed scattering matrix and solves the Wannier-Stark problem without any approximation. The suggested method is very efficient from the numerical point of view and has proven to be a powerful analytic tool for Wannier-Stark resonances appearing in different physical systems such as optical lattices or semiconductor superlattices. (C) 2002 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Univ Kaiserslautern, Fachbereich Phys, D-67653 Kaiserslautern, Germany
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Fachbereich (FB) Physik, Universitat Kaiserslautern, D-67653 Kaiserslautern, Germany
L.V. Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Kolovsky, A. R.; Коловский, Андрей Радиевич; Korsch, H. J.
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Chernozatonskii, L. A.
Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms / L. A. Chernozatonskii, P. B. Sorokin, J. W. Bruning // Appl. Phys. Lett. - 2007. - Vol. 91, Is. 18. - Ст. 183103, DOI 10.1063/1.2800889. - Cited References: 24 . - ISSN 0003-6951

РУБ Physics, Applied
Рубрики:
CARBON
GAS
Кл.слова (ненормированные):
Electronic properties -- Energy gap -- Graphite -- Hydrogen -- Semiconductor materials -- Superlattices -- Electronic spectra -- Graphene sheets -- Quasi-two-dimensional heterostructures -- Semiconducting nanostructures -- Nanostructured materials
Аннотация: It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the formation of 2HG-SL changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with n, but with nonzero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of zigzag strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. (C) 2007 American Institute of Physics.

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Держатели документа:
Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119334, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Humboldt Univ, Math Inst, D-12489 Berlin, Germany
ИФ СО РАН
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, 4 Kosigina St., Moscow 119334, Russian Federation
Siberian Federal University, 79 Svobodny Ave., Krasnoyarsk 660041, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Academgorodok, Krasnoyarsk 660036, Russian Federation
Institute of Mathematics, Humboldt University of Berlin, Berlin 12489, Germany

Доп.точки доступа:
Sorokin, P. B.; Bruning, J. W.
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Transport properties of high-temperature superconductor plus semiconductor composites with different carrier concentration / M. I. Petrov [et al.] // Phys. Solid State. - 1997. - Vol. 39, Is. 5. - P. 735-740, DOI 10.1134/1.1129959. - Cited References: 26 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
CRITICAL CURRENTS
WEAK LINKS
JUNCTIONS
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity rho(T), critical current density J(c)(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). (C) 1997 American Institute of Physics.

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
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Transport properties of high-temperature superconductor + semiconductor composites with different carrier concentration / M. I. Petrov [et al.] // Physics of the Solid State. - 1997. - Vol. 39, Is. 5. - P. 735-740 . - ISSN 1063-7834
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity p(T), critical current density Jc(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). В© 1997 American Institute of Physics.

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Доп.точки доступа:
Петров, Михаил Иванович; Petrov, M. I.; Balaev, D. A.; Балаев, Дмитрий Александрович; Шайхутдинов, Кирилл Александрович; Shaikhutdinov, K. A.; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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Transport properties of composites high temperature superconductor + semiconductor with different carrier concentration / M. I. Petrov [et al.] // Physica C-Superconductivity and its Applications. - 1997. - Vol. 282, Is. PART 4. - P. 2449-2450 . - ISSN 0921-4534
Кл.слова (ненормированные):
Carrier concentration -- Critical current density (superconductivity) -- High temperature superconductors -- Semiconductor materials -- Thermal effects -- Transport properties -- Superconductor semiconductor superconductor junctions -- Composite materials
Аннотация: Composites HTSC + semiconductor with different carrier concentrations were prepared as a model of Josephson type contacts. Experimental temperature dependences of the critical current density Jc(T) in the composites are presented. The best congruence of experiment with theory was reached for the Schussler-Kummel consideration of Andreev scattering in S-Sm-S (S-superconductor, Sm-semiconductor) junctions.

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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IVANOVA, N. B.
THE TEMPERATURE-DEPENDENCE OF MAGNETIZATION IN THE MAGNETIC SEMICONDUCTOR HGCR2SE4 / N. B. IVANOVA, V. K. CHERNOV // Fiz. Tverd. Tela. - 1986. - Vol. 28, Is. 6. - P. 1941-1943. - Cited References: 4 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

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Доп.точки доступа:
CHERNOV, V. K.
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10.

Ignatchenko, V. A.
The spectrum and damping of waves in partially randomized multilayers / V. A. Ignatchenko, Y. I. Mankov, A. A. Maradudin // J. Phys.: Condens. Matter. - 1999. - Vol. 11, Is. 13. - P. 2773-2790, DOI 10.1088/0953-8984/11/13/013. - Cited References: 24 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
SPIN-WAVES
   SEMICONDUCTOR SUPERLATTICES
   LOCALIZATION
   SYSTEMS
Аннотация: The spectrum and damping of waves in partially randomized multilayer structures are calculated. A method of calculation that was proposed and demonstrated earlier, for the model of a superlattice with a harmonic dependence of its material parameters along its axis in the initial state, is extended to the case of a multilayer structure (i.e., a superlattice with sharp interfaces). One- and three-dimensional random modulations of the period are considered, and the correlation function of the superlattice is derived as a series in which each term is a product of a harmonic and a monotonically decaying function. The law of decay of the correlation function is Gaussian for smooth inhomogeneities, and has different forms for one- and three-dimensional short-wavelength inhomogeneities. The spectrum and damping of waves in the superlattice described by this correlation function are found in the weak-coupling approximation in the vicinities of all of the odd Brillouin zone boundaries. Analytical dependences of the main characteristics of the spectrum and damping on the zone number n are obtained. The conditions for the closing of the gaps at the Brillouin zone boundaries are derived, and depend on the dimensionality of the inhomogeneities and the degree of their smoothness.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Univ Calif Irvine, Irvine, CA 92697 USA
ИФ СО РАН
L V Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation
University of California, Irvine, CA 92697 4575, United States

Доп.точки доступа:
Mankov, Y. I.; Maradudin, A. A.; Игнатченко, Вальтер Алексеевич
}
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11.

    The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect / A. V. Kobyakov [et al.] // J. Phys. Conf. Ser. - 2019. - Vol. 1389, Is. 1. - Ст. 012028, DOI 10.1088/1742-6596/1389/1/012028. - Cited References: 13. - These studies are conducted with financial support from the Russian Foundation for Basic Research (grant No.18-02-00161-a). . - ISSN 1742-6588. - ISSN 1742-6596
   Перевод заглавия: Роль полупроводникового слоя в структуре пленок обменного смещения CoNi / Si / FeNi / Si с эффектом спиновой пружины
Аннотация: CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the temperature greater than 100K.

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Держатели документа:
Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russia
L.V. Kirensky Institute of Physics of Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, 660036, Russia

Доп.точки доступа:
Kobyakov, A. V.; Кобяков, Александр Васильевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Yushkov, V. I.; Юшков, Василий Иванович; Yarikov, S. A.; Яриков, Станислав Алексеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhivaya, Ya. A.; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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12.

The mechanisms responsible for broadening of the resistive transition under magnetic field in the Josephson junction network realized in bulk YBCO+CuO composites / D. A. Balaev [et al.] // Physica C. - 2006. - Vol. 435, Is. 1-2. - P. 12-15, DOI 10.1016/j.physc.2006.01.008. - Cited References: 15 . - ISSN 0921-4534

РУБ Physics, Applied
Рубрики:
SUPERCONDUCTORS
MODEL
Кл.слова (ненормированные):
Josephson network -- YBCO plus CuO composites -- dissipation -- magnetic field -- Dissipation -- Josephson network -- Magnetic field -- YBCO + CuO composites -- Composite materials -- Copper compounds -- Mathematical models -- Phase transitions -- Semiconductor junctions -- Yttrium compounds -- Creep model -- Josephson network -- YBCO + CuO composites -- Magnetic field effects
Аннотация: The experimental results of the effect of the magnetic field (up to 60 kOe) on the broadening of the resistive transition of bulk composites Y3/4Lu1/4Ba2CU3O7 (YBCO) + CuO are presented. These composites represent the network of the tunnel-type Josephson junctions where the copper oxide acts as a material forming barriers between YBCO crystallites. The mechanisms responsible for broadening of the resistive transition under magnetic field are discussed. The analysis of experimental R(7) dependences have shown that in the low field range 0-10(2) Oe, the R(7) dependences are described well by the Ambegaokar-Halperin (AH) model. In the range 10(3)-6 x 10(4) Oe, the dissipation follows Arrhenius law R similar to exp(-U(H)/k(B)T) characteristic for thermally activated flux creep model. In the range H similar to 10(2)-10(3), the crossover from AH to flux creep dissipation mechanisms occurs. (c) 2006 Elsevier B.V. All rights reserved.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Shaihutdinov, K. A.; Petrov, M. I.; Петров, Михаил Иванович; International Workshop on Weak Superconductivity(2005 ; Sept. ; 16-19 ; Bratislava, Slovakia)
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13.

The magnetoelastic effect in CoxMn1-xS solid solutions / S. S. Aplesnin [et al.] // Solid State Commun. - 2010. - Vol. 150, Is. 13-14. - P. 564-567, DOI 10.1016/j.ssc.2010.01.009. - Cited References: 13. - This work was supported by the Russian Foundation for Basic Research projects no. 08-02-00364-a, no. 08-02-90031, no. F08037, F08-229, and no. 09-02-00554-a. . - ISSN 0038-1098

РУБ Physics, Condensed Matter
Рубрики:
YVO3 SINGLE-CRYSTAL
   SPIN-STATE
   TRANSITION
   TRANSPORT
   PHYSICS
   LACOO3
Кл.слова (ненормированные):
Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Coefficient of thermal expansion -- Magnetoelastic effects -- Orbital ordering -- Temperature hysteresis -- Temperature range -- Zero magnetic fields -- Crystallization -- Electric resistance -- Magnetic field effects -- Magnetoresistance -- Manganese -- Manganese compounds -- Neon -- Organic polymers -- Scattering -- Semiconductor quantum dots -- Solid solutions -- Solidification -- Thermal stress -- X ray scattering -- Thermal expansion
Аннотация: The magnetization of cation-substituted CoxMn(1-x)S sulfides upon cooling in zero magnetic field and in a field in the temperature range 4-300 K has been measured and the resistance versus magnetic field (up to 10 kOe) dependences have been obtained. Magnetoresistance and temperature hysteresis of magnetization versus prehistory are found at the magnetic field H < 0.1 T and at T < 240 K. The interrelation between the magnetic and elastic subsystems of the CoxMn1-xS solid solutions has been established. A jump in the coefficient of thermal expansion is observed at the Neel temperature. The features of the physical properties are explained by orbital ordering. (C) 2010 Elsevier Ltd. All rights reserved.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Har'kov, A. M.] MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia
[Gorev, M. V.
Balaev, A. D.
Eremin, E. V.
Bovina, A. F.] Russian Acad Sci, KSC Siberian Branch, Ctr Shared, Krasnoyarsk 660036, Russia
КНЦ СО РАН
M.F. Reshetneva Aircosmic Siberian State University, Krasnoyarsk, 660014, Russian Federation
Center of shared using KSC Siberian branch, Russian Academy Science, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Har'kov, A. M.; Gorev, M. V.; Горев, Михаил Васильевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Eremin, E. V.; Еремин, Евгений Владимирович; Bovina, A. F.; Бовина, Ася Федоровна
}
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14.

The influence of the semiconductor layer on the magnetic properties in a three-layer structure CoNi/Si/FeNi / A. V. Kobyakov [et al.] // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 1. - Ст. C.P30. - P. 319. - Cited References: 2. - These studies are conducted with financial support from the Russian Foundation for Basic Research (grant # 18-02-00161-a) . - ISBN 978-5-9500855-7-4

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Kobyakov, A. V.; Кобяков, Александр Васильевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Yushkov, V. I.; Юшков, Василий Иванович; Yarikov, S. A.; Яриков, Станислав Алексеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhivaya, Ya. A.; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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15.

The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier / N. V. Volkov [et al.] // Appl. Phys. Lett. - 2014. - Vol. 104, Is. 22. - Ст. 222406, DOI 10.1063/1.4881715. - Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043. . - ISSN 0003-6951. - ISSN 1077-3118

РУБ Physics, Applied
Рубрики:
MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
Russian Acad Sci, Inst Automat & Control Proc, Far East Branch, Vladivostok 690041, Russia
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Gustaitsev, A. O.; Balashov, V. V.; Korobtsov, V .V.; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
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16.

Gavrichkov, V. A.
The band structure of n-type cuprate superconductors with the T '(T) structure taking into account strong electron correlation / V. A. Gavrichkov, S. G. Ovchinnikov // J. Exp. Theor. Phys. - 2004. - Vol. 98, Is. 3. - P. 556-564, DOI 10.1134/1.1705708. - Cited References: 18. - This work was financially supported by the Russian Foundation for Basic Research (project no. 03-02-16124), RFFI-KKFN “Eniseœ” (project no. 02-02-97705), INTAS (project no. 01-0654), integration program of URO and Siberian Division, Russian Academy of Sciences . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
QUASI-PARTICLES
   COPPER OXIDES
   TEMPERATURE
   LA2-XSRXCUO4
   ND2-XCEXCUO4
   EVOLUTION
   MOMENTS
Кл.слова (ненормированные):
Dielectric properties -- Electric conductance -- Electron transitions -- Electronic structure -- Fermi level -- Phase diagrams -- Semiconductor doping -- Conduction bands -- Electron correlation -- Spectral density -- Superconducting materials
Аннотация: The spectral density, dispersion relations, and the position of the Fermi level for n-doped compositions based on NCO and LCO were calculated within the framework of the generalized tight binding method. As distinguished from LCO, the dielectric gap in NCO is nonlinear in character. We observe a virtual level both at the bottom of the conduction band and at the top of the valence band in both compounds. However, its position corresponds to the extreme bottom of the conduction band in LCO and is 0.1 - 0.2 eV above the bottom in NCO. This explains why we observe Fermi level pinning in n-LCO as the concentration of the doping component grows and reproduce its absence in NCCO at low doping values. We also found both compositions to be unstable in a narrow concentration range with respect to a nonuniform charge density distribution. The relation between the phase diagram for NCCO and the calculated electronic structure is discussed. (C) 2004 MAIK "Nauka/Interperiodica".

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Публикация на русском языке Гавричков, Владимир Александрович. Зонная структура купратных сверхпроводников n-типа с T'(T)-структурой при учете сильных электронных корреляций [Текст] / В. А. Гавричков, С. Г. Овчинников // Журн. эксперим. и теор. физ. - 2004. - Т. 125 Вып. 3. - С. 630-639

Держатели документа:
Russian Acad Sci, Siberian Div, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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17.

The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films / S. S. Aplesnin [et al.] // Semicond. Sci. Technol. - 2018. - Vol. 33, Is. 8. - Ст. 085006, DOI 10.1088/1361-6641/aace44. - Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project No 18-52-00009 Bel_a; No 18-32-00079 mol_a; No 18-42-240001 r_a; the state order No 3.5743.2017/6.7. . - ISSN 0268-1242. - ISSN 1361-6641

РУБ Engineering, Electrical & Electronic + Materials Science,
Рубрики:
NEUTRON-SCATTERING
   SURFACE-STATES
   MNTE
   CONDUCTIVITY
   MECHANISM
Кл.слова (ненормированные):
polycrystalline films -- magnetoresistance -- impedance -- polaron -- magnetic -- properties -- thermoelectric
Аннотация: The correlation between the dc and ac electrical resistance and the structural, magnetic, and thermoelectric properties of polycrystalline MnSe1−X Te Х (0.3 ≤ X ≤ 0.4) manganese chalcogenide films in the temperature range of 80–400 K has been investigated. Inhomogeneous electronic states and transitions between them accompanied by structural lattice deformations have been found at temperatures including the Neel temperature region. The magnetic susceptibility maximum above the Neel temperature in a magnetic field of 8.6 kOe has been observed. Temperature ranges of the coexistence of two types of electrically inhomogeneous states have been established by impedance spectroscopy in the frequency range of 0.1–1000 kHz and the change of the hopping conductivity for diffusion one accompanied by the magnetic susceptibility minimum has been found. The magnetoresistance in magnetic fields of up to 12 kОе has been established. It has been revealed that the thermopower and magnetoresistance change its sign upon heating. The experimental data are explained using a spin polaron model with the localization of polarons and formation of the electron phase-separation. The alternation of magnetoresistance in sign is attributed to the ferromagnetic orbital ordering of electrons and the negative magnetoresistance is explained by suppression of spin fluctuations in a magnetic field.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarskii Rabochi Ave 31, Krasnoyarsk 660014, Russia.
Sci Pract Mat Res Ctr NAS Belarus, P Brovki Str 19, Minsk 220072, BELARUS.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Romanova, O. B.; Романова, Оксана Борисовна; Sitnikov, M. N.; Kretinin, V. V.; Galyas, A., I; Yanushkevich, K., I; Russian Foundation for Basic Research (RFBR) [18-52-00009 Bel_a, 18-32-00079 mol_a, 18-42-240001 r_a]; [3.5743.2017/6.7]
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18.

TEMPERATURE-DEPENDENCE OF MOBILITY IN MAGNETIC SEMICONDUCTOR HGCR2SE4 / V. K. CHERNOV [и др.] // Fiz. Tverd. Tela. - 1986. - Vol. 28, Is. 1. - P. 289-291. - Cited References: 8 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
CHERNOV, V. K.; GAVRICHKOV, V. A.; IVANOVA, N. B.; VEISIG, G. S.; BOYARSHINOV, Y. V.
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19.

Symmetry breaking in a driven and strongly damped pendulum / J. . Isohatala [et al.] // Phys. Rev. E. - 2005. - Vol. 71, Is. 6. - Ст. 66206, DOI 10.1103/PhysRevE.71.066206. - Cited References: 37 . - ISSN 1539-3755

РУБ Physics, Fluids & Plasmas + Physics, Mathematical
Рубрики:
DC VOLTAGE GENERATION
   SEMICONDUCTOR SUPERLATTICES
   JOSEPHSON-JUNCTIONS
   BLOCH OSCILLATIONS
   FORCED PENDULUM
   CHAOS
   FREQUENCY
   SYSTEMS
   RECTIFICATION
   STANDARD
Кл.слова (ненормированные):
Periodically driven pendulums -- Symmetry breaking -- Bifurcation (mathematics) -- Damping -- Dynamics -- Nonlinear systems -- Semiconductor superlattices -- Pendulums
Аннотация: We examine the conditions for appearance of a symmetry breaking bifurcation in damped and periodically driven pendulums in the case of strong damping. We show that symmetry breaking, unlike other nonlinear phenomena, can exist at high dissipation. We prove that symmetry breaking phases exist between phases of symmetric normal and symmetric inverted oscillations. We find that symmetry broken solutions occupy a smaller region of the pendulum's parameter space in comparison to the statements made in earlier considerations [McDonald and Plischke, Phys. Rev. B 27, 201 (1983)]. Our research on symmetry breaking in a strongly damped pendulum is relevant to an understanding of the phenomena of dynamic symmetry breaking and rectification in pure ac driven semiconductor superlattices.

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Держатели документа:
Univ Oulu, Dept Phys Sci, FIN-90014 Oulu, Finland
LV Kirenskii Inst Phys, Theory Nonlinear Proc Lab, Krasnoyarsk 660036, Russia
ИФ СО РАН
Department of Physical Sciences, P. O. Box 3000, Oulu FIN-90014, Finland
Theory of Nonlinear Processes Laboratory, Kirensky Institute of Physics, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Isohatala, J.; Alekseev, K. N.; Kurki, L. T.; Pietilainen, P.
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20.

Superconductor-semiconductor-superconductor junction network in bulk polycrystalline composites Y3/4Lu1/4Ba2Cu3O7 + Cu1-xLixO / M. I. Petrov [et al.] // Superconductor Science and Technology. - 2001. - Vol. 14, Is. 9. - P. 798-805, DOI 10.1088/0953-2048/14/9/333 . - ISSN 0953-2048
Кл.слова (ненормированные):
Critical current density (superconductivity) -- Josephson junction devices -- Polycrystalline materials -- Superconductivity -- Thermal effects -- Transport properties -- Superconductor junction networks -- Semiconductor junctions
Аннотация: Bulk Y3/4Lu1/4Ba2Cu3O7 + Cu1-xLixO composites with x = 0, 0.003 and 0.06 and varied volume content of Cu1-xLixO have been prepared. Analysis of the transport properties of the composites has shown that they can be represented as a network of superconductor-semiconductor-superconductor (S-Sm-S) weak links. The dependence of the critical current density on the normal resistance for the composites studied shows a behaviour similar to that for single Josephson junctions. The experimental temperature dependences of the critical current are qualitatively described in terms of a theory of S-Sm-S junctions that takes into account the Andreev reflection of carriers from the S-Sm and Sm-S interfaces.

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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