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    Superconductivity in repulsive fermi-systems at low density / M. Y. Kagan [et al.] // J. Supercond. Nov. Magn. - 2013. - Vol. 26, Is. 9. - P. 2809-2815, DOI 10.1007/s10948-013-2262-9. - Cited References: 57. - The authors acknowledge helpful discussions with A. V. Chubukov, A. S. Alexandrov, V. V. Kabanov, K. I. Kugel, Yu. V. Kopaev, N.M. Plakida, N.V. Prokof'ev, M. M. Korovushkin, M. A. Mitskan. M. Yu. K. work was supported by RFBR grant No. 11-02-00741. . - ISSN 1557-1939
   Перевод заглавия: Сверхпроводимость в Ферми-системах с отталкиванием при малых концентрациях

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
T-J MODEL
   SUPERFLUID TRANSITION-TEMPERATURE
   FRACTIONAL-STATISTICS
   PHASE-SEPARATION
   HUBBARD-MODEL
   GAS
   ENHANCEMENT
   MECHANISM
   EXCHANGE
   PARTICLES
Кл.слова (ненормированные):
Anomalous superconductivity -- p-wave and d-wave pairings -- Kohn-Luttinger mechanism -- Shubin-Vonsovsky -- Hubbard and t-J models
Аннотация: In the large variety of models such as 3D and 2D Fermi-gas model with hard-core repulsion, 3D and 2D Hubbard model, and the Shubin-Vonsovsky model, we demonstrate the possibility of triplet p-wave pairing at low electron density. We show that the critical temperature of the p-wave pairing can be strongly increased in a spin-polarized case or in a two-band situation already at low density and reach experimentally feasible values of (1-5) K. We also discuss briefly d-wave pairing and high-T-C superconductivity with T-C similar to 100 K, which arises in the 2D t-J model in the range of parameters realistic for cuprates.

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Держатели документа:
PL Kapitsa Phys Problems Inst, Moscow 119334, Russia
Leibniz Inst Solid State & Mat Res, D-01171 Dresden, Germany
Hofstra Univ, Dept Phys & Astron, Hempstead, NY 11549 USA
Kirenskii Inst Phys, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Kagan, M. Y.; Efremov, D. V.; Mar'enko, M. S.; Val'kov, V. V.; Вальков, Валерий Владимирович; RFBR [11-02-00741]
}
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Kohn-Luttinger effect and anomalous pairing in repulsive Fermi-systems at low density : Review Article / M. Y. Kagan [et al.] // Low Temp. Phys. - 2012. - Vol. 38, Is. 9. - P. 874-879, DOI 10.1063/1.4752091. - Cited References: 59. - We acknowledge helpful discussions with A. V. Chubukov, A. S. Alexandrov, V. V. Kabanov, K. I. Kugel, Yu. V. Kopaev, N. M. Plakida, and N. V. Prokof'ev. M. Yu. K's work was supported by RFBR Grant No 11-02-00741-a. . - ISSN 1063-777X

РУБ Physics, Applied
Рубрики:
T-J MODEL
   SUPERFLUID TRANSITION-TEMPERATURE
   2-BAND HUBBARD-MODEL
   LOW ELECTRON-DENSITY
   FRACTIONAL-STATISTICS
   PHASE-SEPARATION
   SUPERCONDUCTIVITY
   GAS
   ENHANCEMENT
   MECHANISM
Кл.слова (ненормированные):
d-wave superconductivity -- electron density -- electron spin polarisation -- high-temperature superconductors -- Hubbard model -- superconducting transition temperature -- t-J model -- two-dimensional electron gas
Аннотация: We demonstrate the possibility of triplet p-wave pairing at low electron density a large number of models such as 3D and 2D Fermi-gas models with hard-core repulsion, 3D and 2D Hubbard models, and the Shubin-Vonsovsky model. The critical temperature for p-wave pairing can be considerably higher in the spin-polarized case or even in a two-band situation at low density and can reach experimentally observable values of 1–5 K. We also discuss briefly the d-wave pairing and high-Tc superconductivity with Tc ∼ 100 K which arise in the extended Hubbard model and in the generalized t-Jmodel when close to half-filling.

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Публикация "на русском языке" Kohn-Luttinger effect and anomalous pairing in repulsive Fermi-systems at low density [Текст] : Review Article / M. Yu. Kagan [et al.] // Физ. низких температур : Физико-технический институт низких температур им. Б.И. Веркина НАН Украины, 2012. - Т. 38 Вып. 9.- С.1102-1108

Держатели документа:
[Kagan, M. Yu.] Kapitza Inst Phys Problems, Moscow 19334, Russia
[Efremov, D. V.] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[Mar'enko, M. S.] Hofstra Univ, Dept Phys & Astron, Hempstead, NY 11549 USA
[Val'kov, V. V.] Kirenskii Inst Phys, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Kagan, M. Y.; Каган, Максим Юрьевич; Efremov, D. V.; Mar'enko, M. S.; Val'kov, V. V.; Вальков, Валерий Владимирович
}
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Study of interaction between transition metal atoms and bigraphene monovacancy by means of quantum chemistry / A. A. Kuzubov [et al.] // Comput. Mater. Sci. - 2016. - Vol. 112, Part A. - P. 269-275, DOI 10.1016/j.commatsci.2015.11.002. - Cited References: 39. - The authors would like to thank Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; and L.V. Kirensky Institute of Physics of SB RAS, Krasnoyarsk, for providing the access to their supercomputers. This work was supported by the government contract of the Ministry of Education and Science of the Russian Federation to Siberian Federal University (Grant No. 16.1500.2014/K). . - ISSN 0927-0256

РУБ Materials Science, Multidisciplinary
Рубрики:
INITIO MOLECULAR-DYNAMICS
   MASSLESS DIRAC FERMIONS
   GRAPHENE
   VACANCIES
   POINTS
   GAS
Кл.слова (ненормированные):
Bigraphene -- Spintronics -- Transition metal -- Adsorption -- Migration
Аннотация: First-row transition metal atoms adsorption on bigraphene monovacancy was studied within the framework of DFT in periodic boundary conditions. Electronic and magnetic properties of composites were analyzed and their potential utilization in spintronics was discussed. Barriers of metal atoms migration from bigraphene surface to the interlayer space through the vacancy were estimated in order to consider both thermodynamic and kinetic aspects of composites experimental preparation. Formation of metal atoms inner-sorbed on bigraphene was found to demand harsh synthesis conditions; whereas outer-sorbed composites demonstrate significantly higher degree of spin polarization which makes them perspective for usage in spintronic devices. © 2015 Elsevier B.V.

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Держатели документа:
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, Russian Federation
L.V. Kirensky Institute of Physics, 50 Akademgorodok, Krasnoyarsk, Russian Federation
Kyungpook National University, 80 Daehakro, Bukgu, Daegu, South Korea

Доп.точки доступа:
Kuzubov, A. A.; Кузубов, Александр Александрович; Avramov, P. V.; Аврамов, Павел Вениаминович; Nikolaeva, K. M.; Mikhaleva, N. S.; Kovaleva, E. A.; Kuklin, A. V.; Куклин, Артем Валентинович; Fedorov, A. S.; Федоров, Александр Семенович
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Effect of electron correlations on the structure of photoprotein substrates / S. G. Ovchinnikov [et al.] // JETP Letters. - 2010. - Vol. 91, Is. 9. - P. 490-493, DOI 10.1134/S0021364010090122. - Cited References: 14. - This work was supported by the Russian Foundation for Basic Research (project no. 07-04-00930-a), by the Presidium of the Russian Academy of Sciences (program "Molecular and Cellular Biology"), and by the Siberian Branch, Russian Academy of Sciences (project no. 2). . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
ANGSTROM RESOLUTION
   CRYSTAL-STRUCTURE
   AEQUORIN
   ENERGY
   OBELIN
   GAS
Аннотация: The electronic structure and total energy of various isomeric forms of coelenterazine and coelenteramide have been calculated by quantum chemistry methods both in the single-electron approximation and taking into account correlation effects. It has been shown that the inclusion of electron correlations makes it possible to obtain the structure of the coelenteramide close to the experimentally determined structure, as well as to choose the structure of the coelenterazine CLZ(1H) as the most probable isomeric form.

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Держатели документа:
[Ovchinnikov, S. G.
Tomilin, F. N.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Ovchinnikov, S. G.
Antipina, L. Yu.
Tomilin, F. N.
Kuzubov, A. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Antipina, L. Yu.; Tomilin, F. N.; Томилин, Феликс Николаевич; Kuzubov, A. A.; Кузубов, Александр Александрович
}
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Chernozatonskii, L. A.
Electronic superlattices and waveguides based on graphene: structures, properties and applications / L. A. Chernozatonskii, P. B. Sorokin // Phys. Status Solidi BVol. 245, Is. 10. - P. 2086-2089, DOI 10.1002/pssb.200879578. - Cited References: 21. - We are grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for the possibility of using a cluster computer for quantum-chemical calculations, to I.V. Stankevich, L. Biro and J. Bruning for fruitful discussions. The geometry of all presented structures was visualized by ChemCraft software (http://www.chemcraftprog.com). This work was supported by the Russian Foundation for Basic Research (project no. 08-02-01096). . - ISSN 0370-1972

РУБ Physics, Condensed Matter
Рубрики:
PSEUDOPOTENTIALS
GAS
Аннотация: The new class of quasi-2D superlattices based on graphene with periodically adsorbed hydrogen pairs was proposed. The ab initio DFT method was used for optimization of the atomic geometry and electronic structure of propose structures. It was found that the superlattices band gap decreases nonmonotonically with distance between hydrogen pairs. Based on these results we hope that the graphene superlattices can be promising candidates for various nanotechnological applications especially as elements in nanoelectronic devices. (C) 2008 WILEY-VCH Verlag GmBH & Co. KGaA, Weinheim

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Держатели документа:
[Chernozatonskii, Leonid A.
Sorokin, Pavel B.] Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119334, Russia
[Sorokin, Pavel B.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Sorokin, Pavel B.] Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, 4 Kosigina st., Moscow 119334, Russian Federation
Siberian Federal University, 79 Svobodny av., Krasnoyarsk 660041, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Sorokin, P. B.; Сорокин, Павел Б.
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Kolovsky, A. R.
Transport of cold atoms in optical lattices / A. R. Kolovsky // Eur. Phys. J. - Spec. Top. - 2007. - Vol. 151. - P. 103-112, DOI 10.1140/epjst/e2007-00366-5. - Cited References: 24 . - ISSN 1951-6355

РУБ Physics, Multidisciplinary
Рубрики:
ULTRACOLD ATOMS
   DISRUPTION
   SUPERFLUID
   GAS
Аннотация: The work discusses transport of cold atoms in optical lattices. Two related but different problems are considered: interacting Bose atoms subject to a static field (i.e., the atoms in a tilted lattice); and non-interacting atoms in a tilted lattice in the presence of a buffer gas. For these two systems we found, respectively: periodic, quasiperiodic, or decaying Bloch oscillations, as it depends on the strength of atom-atom interactions and the magnitude of the static field; diffusive directed current of atoms, similar to the electron current in ordinary conductors.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Коловский, Андрей Радиевич
}
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Chernozatonskii, L. A.
Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms / L. A. Chernozatonskii, P. B. Sorokin, J. W. Bruning // Appl. Phys. Lett. - 2007. - Vol. 91, Is. 18. - Ст. 183103, DOI 10.1063/1.2800889. - Cited References: 24 . - ISSN 0003-6951

РУБ Physics, Applied
Рубрики:
CARBON
GAS
Кл.слова (ненормированные):
Electronic properties -- Energy gap -- Graphite -- Hydrogen -- Semiconductor materials -- Superlattices -- Electronic spectra -- Graphene sheets -- Quasi-two-dimensional heterostructures -- Semiconducting nanostructures -- Nanostructured materials
Аннотация: It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the formation of 2HG-SL changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with n, but with nonzero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of zigzag strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. (C) 2007 American Institute of Physics.

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Держатели документа:
Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119334, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Humboldt Univ, Math Inst, D-12489 Berlin, Germany
ИФ СО РАН
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, 4 Kosigina St., Moscow 119334, Russian Federation
Siberian Federal University, 79 Svobodny Ave., Krasnoyarsk 660041, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Academgorodok, Krasnoyarsk 660036, Russian Federation
Institute of Mathematics, Humboldt University of Berlin, Berlin 12489, Germany

Доп.точки доступа:
Sorokin, P. B.; Bruning, J. W.
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Sadreev, A. F.
Electron transmission through an ac biased quantum point contact / A. F. Sadreev, K. . Davlet-Kildeev // Phys. Rev. B. - 2007. - Vol. 75, Is. 23. - Ст. 235309, DOI 10.1103/PhysRevB.75.235309. - Cited References: 41 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
MULTIPROBE CONDUCTORS
   BALLISTIC TRANSPORT
   WIRES
   GAS
   CONSTRICTION
   SCATTERING
   TIME
   QUANTIZATION
   OSCILLATIONS
   RESISTANCE
Аннотация: We consider a transmission through the potential relief created by a split gate constriction (quantum point contact). Simultaneously, dc and ac voltages V-up(t)=V-0+V-1 cos omega t and V-dw(t)=V-0+V-1 cos(omega t+theta) are applied to the gates. We show numerically that the in-phase ac voltages (theta=0) smear the conductance steps of the stationary conductance, while the antiphase ac voltages (theta=pi) only shift the conductance steps. Moreover, computation of currents in probing wires connected cross to the time-periodic quantum point contact reveals a net current for theta not equal 0,pi. This implies that the Schrodinger equation described by the electron transport under the effect of the time-periodic long electrodes is equivalent to the transmission in the crossed effective magnetic and electric fields, where the in-plane magnetic field b similar to theta is directed along the transport axis and the electric field e similar to omega is directed perpendicular to the plane of electron transport. Then the vector exb gives rise to the galvanomagnetic current directed cross to the electron transport.

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Держатели документа:
Russian Acad Sci, Inst Phys, Krasnoyarsk 660036, Russia
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
ИФ СО РАН
Institute of Physics, Academy of Sciences, 660036 Krasnoyarsk, Russian Federation
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden

Доп.точки доступа:
Davlet-Kildeev, K.; Садреев, Алмаз Фаттахович
}
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Jauho, A. P.
Simulations of interference effects in gated two-dimensional ballistic electron systems / A. P. Jauho, K. N. Pichugin, A. F. Sadreev // Phys. Rev. B. - 1999. - Vol. 60, Is. 11. - P. 8191-8198, DOI 10.1103/PhysRevB.60.8191. - Cited References: 26 . - ISSN 0163-1829

РУБ Physics, Condensed Matter
Рубрики:
CIRCULAR BENDS
   WAVE-GUIDES
   QUANTUM
   CONDUCTANCE
   FLOW
   GAS
Аннотация: We present detailed simulations addressing recent electronic interference experiments,where a metallic gate is used to locally modify the Fermi wavelength of the charge carriers. Our numerical calculations are based on a solution of the one-particle Schrodinger equation for a realistic model of the actual sample geometry, including a Poison equation-based determination of the potential due to the gate. The conductance is determined with the multiprobe Landauer-Buttiker formula, and in general we find conductance vs gate voltage characteristics, which closely resemble the experimental traces. A detailed examination based on quantum-mechanical streamlines suggests that the simple one-dimensional semiclassical model often used to describe the experiments has only a limited range of validity, and that certain ''unexpected" periodicities should not be assigned any particular significance, they arise due to the complicated multiple scattering processes occurring in certain sample geometries.

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Держатели документа:
Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Acad Sci Czech Republ, Inst Phys, CR-16200 Prague, Czech Republic
Abo Akad Univ, Dept Phys, SF-20500 Turku, Finland
ИФ СО РАН

Доп.точки доступа:
Pichugin, K. N.; Пичугин, Константин Николаевич; Sadreev, A. F.; Садреев, Алмаз Фаттахович
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10.

Electrical properties of thin In2O3/C films / I. V. Babkina, M. N. Volochaev, O. V. Zhilova [et al.] // Inorg. Mater. - 2020. - Vol. 56, Is. 4. - P. 374-381, DOI 10.1134/S0020168520040019. - Cited References: 26. - This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target, project no. 3.1867, 2017/4.6). . - ISSN 0020-1685. - ISSN 1608-3172

РУБ Materials Science, Multidisciplinary
Рубрики:
SEMICONDUCTORS
GAS
Кл.слова (ненормированные):
amorphous and crystalline structures -- electrical resistance -- heat treatment
Аннотация: We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In2O3 granules distributed at random over amorphous carbon. The electrical transport properties of the In2O3/C thin films depend on their thickness. In the temperature range 80-300 K, the dominant electrical transport mechanism in the In2O3/C thin films of thickness h <70 nm sequentially changes from variable range hopping between localized states in a narrow energy band near the Fermi level (between 80 and 120 K) to nearest neighbor hopping (between 120 and 250 K) and then to variable range hopping between localized states in the conduction band tail (between 250 and 300 K). The films of thickness h > 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In2O3 nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient.

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Публикация на русском языке Электрические свойства тонких пленок In2O3/С [Текст] / И. В. Бабкина, М. Н. Волочаев, О. В. Жилова [и др.] // Неорган. матер. - 2020. - Т. 56 № 4. - С. 393-401

Держатели документа:
Voronezh State Tech Univ, Moskovskii Pr 14, Voronezh 394026, Russia.
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk Sci Ctr,Fed Res Ctr, Akademgorodok 50-38, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Babkina, I. V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhilova, O. V.; Kalinin, Yu. E.; Makagonov, V. A.; Pankov, S. Yu.; Sitnikov, A. V.; Russian Federation Ministry of Science and Higher Education [3.1867, 2017/4.6]
}
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