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The phases formed in Sn/Co thin bilayer upon heating / L. Eremin, A. Matsynin, Yu. Balashov [et al.] // J. Solid State Chem. - 2024. - Vol. 334. - Ст. 124693, DOI 10.1016/j.jssc.2024.124693. - Cited References: 33 . - ISSN 0022-4596. - ISSN 1095-726X
Кл.слова (ненормированные):
Thin films -- Solid-state chemistry -- Metallic bilayer -- Annealing
Аннотация: The structure and phases formed in Sn/Co thin films are interesting both from the solid-state chemistry point of view and due to applications of such a metallic bilayer. The phases forming in thin films Sn/Co obtained by thermal vacuum evaporation on two different substrates SiO2 and MgO(100) at different annealing temperatures have been studied. Annealing above 110°С results in intermetallics formation in the films. The hcp-cobalt is grown in the films on SiO2 substrate, and the fcc-Co is observed on MgO(100) substrate. It is found that the stable α-Co3Sn2 intermetallic is formed at higher annealing temperature in film on MgO(100) substrate. We show that transformations related to mass transfer in the Sn/Co bilayers were up to 500°С and were finished upon reaching the thermodynamically equilibrium phase composition at this temperature.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia
Applied Physics Department, Reshetnev Siberian State University of Science and Technology, 660037, Krasnoyarsk, Russia

Доп.точки доступа:
Eremin, L. A.; Еремин, Леонид Аркадьевич; Matsynin, A. A.; Мацынин, Алексей Александрович; Balashov, Yu. Yu.; Балашов, Юрий Юрьевич; Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Komogortsev, S. V.; Комогорцев, Сергей Викторович
}
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    Исследование фазовых превращений в тонкопленочных структурах Sn/Co при вакуумном отжиге / A. A. Мацынин, С. В. Комогорцев, Л. Е. Быкова, Л. А. Еремин // Магнитные материалы. Новые технологии : тез. докл. IX Байкал. междунар. конф. BICMM-2023 / чл. прогр. ком.: S. S. Aplesnin [et al.] ; чл. орг. ком. R. S. Iskhakov [et al.]. - Иркутск, 2023. - С. 125-126, DOI 10.26516/978-5-9624-2178-0.2023.1-207. - Библиогр.: 3 . - ISBN 978-5-9624-2178-0
   Перевод заглавия: Study of thase transformations in thin-film Sn/Co structures under vacuum annealing

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Держатели документа:
Институт физики им. Л. В. Киренского СО РАН
Сибирский государственный университет науки и технологий имени академика М. Ф. Решетнева

Доп.точки доступа:
Аплеснин, Сергей Степанович \чл. прогр. ком.\; Aplesnin, S. S.; Балаев, Дмитрий Александрович \чл. прогр. ком.\; Balaev, D. A.; Овчинников, Сергей Геннадьевич \чл. прогр. ком.\; Ovchinnikov, S. G.; Исхаков, Рауф Садыкович \чл. орг. ком.\; Iskhakov, R. S.; Мацынин, Алексей Александрович; Matsynin, A. A.; Комогорцев, Сергей Викторович; Komogortsev, S. V.; Быкова, Людмила Евгеньевна; Bykova, L. E.; Еремин, Леонид Аркадьевич; Байкальская международная конференция "Магнитные материалы. Новые технологии"(9 ; 2023 ; сент. ; 11-14 ; Байкальск); "Магнитные материалы. Новые технологии", Байкальская международная конференция(9 ; 2023 ; сент. ; 11-14 ; Байкальск); "Magnetic materials. New tecnologies", Baikal International Conference(9 ; 2023 ; Sept. ; 11-14 ; Baikalsk); Иркутский государственный университет
}
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    Zobov, V. E.
    Sequences of selective rotation operators for three group clustering on qutrits by means of quantum annealing / V. E. Zobov, I. S. Pichkovskiy // Proc. SPIE. - 2022. - Vol. 12157. - Ст. 121571Z, DOI 10.1117/12.2622732. - Cited References: 25. - This work was supported by a grant from the Fund for the Development of Theoretical Physics and Mathematics "Basis" # 20-1-5-41-1
   Перевод заглавия: Последовательности селективных операторов поворота для кластеризации на три группы на кутритах посредством квантового отжига
Кл.слова (ненормированные):
quantum annealing -- clustering -- qutrit -- selective rotation operators
Аннотация: Recently, it was demonstrated that the clustering considered in this articlec, which consists in partitioning a set of data points into subsets depending on the proximity of some properties, can be performed using quantum annealing on a system of two-level quantum elements - qubits. In previous work, we proposed to pass from qubits to qutrits - three-level quantum elements showed the advantages of such a replacement and obtained a time-dependent effective Hamiltonian. In the present paper, we have found a sequence of selective rotation operators that allows one to realize adiabatic evolution with this effective Hamiltonian in the discrete-time approximation. On five qutrits, represented by spins S = 1, we performed a simulation of clustering a set of six points on a plane into three groups by means of quantum annealing.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Russian Federation

Доп.точки доступа:
Pichkovskiy, I. S.; Пичковский, Иван Сергеевич; Зобов, Владимир Евгеньевич; International Conference on Micro- and Nano-Electronics(14 ; 2021 ; Oct. 4-8 ; Zvenigorod, Russian Federation)
}
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    Zobov, V. E.
    Clustering by quantum annealing on the three-level quantum elements qutrits / V. E. Zobov, I. S. Pichkovskiy // Quantum Inf. Process. - 2022. - Vol. 21, Is. 4. - Ст. 144, DOI 10.1007/s11128-022-03482-0. - Cited References: 28. - This study was supported by the Theoretical Physics and Mathematics Advancement Foundation “BASIS” #20-1-5-41-1. We are grateful for their trust and assistance in research . - ISSN 1570-0755
   Перевод заглавия: Кластеризация посредством квантового отжига на квантовых трёхуровневых элементах кутритах
Кл.слова (ненормированные):
Quantum adiabatic algorithm -- Quantum annealing -- Qutrit -- Clustering
Аннотация: Clustering is grouping of data by the proximity of some properties. We report on the possibility of increasing the efficiency of clustering of points in a plane using artificial quantum neural networks after the replacement of the two-level neurons called qubits represented by the spins S = 1/2 by the three-level neurons called qutrits represented by the spins S = 1. The problem has been solved by the slow adiabatic change of the Hamiltonian in time. The methods for controlling a qutrit system using projection operators have been developed and the numerical simulation has been performed. The Hamiltonians for two well-known clustering methods, one-hot encoding and k-means, have been built. The first method has been used to partition a set of six points into three or two clusters and the second method, to partition a set of nine points into three clusters and seven points into four clusters. The simulation has shown that the clustering problem can be effectively solved on qutrits represented by the spins S = 1. The advantages of clustering on qutrits over that on qubits have been demonstrated. In particular, the number of qutrits required to represent N data points is smaller than the number of qubits by a factor of log 2N/ log 3N. For qutrits, the simplest is to partition the data points into three clusters rather than two ones. At the data partition into more than three clusters, it has been proposed to number the clusters by the numbers of states of the corresponding multi-spin subsystems, instead of using the numbers of individual spins. This reduces even more the number of qutrits (Nlog 3K instead of NK) required to implement the algorithm.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Pichkovskiy, I. S.; Пичковский, Иван Сергеевич; Зобов, Владимир Евгеньевич
}
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    Solid-state synthesis, structural and magnetic characterization of ferromagnetic phases in 24Ga/76Fe(0 0 1), 40Ga/60Fe(0 0 1) and 60Ga/40Fe(0 0 1) bilayers / V. G. Myagkov, L. E. Bykova, V. S. Zhigalov [et al.] // J. Magn. Magn. Mater. - 2022. - Vol. 561. - Ст. 169709, DOI 10.1016/j.jmmm.2022.169709. - Cited References: 77. - The work is partially based upon the experiments performed on Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS» . - ISSN 0304-8853
   Перевод заглавия: Твердотельный синтез, структурные и магнитные характеристики ферромагнитных фаз в бислоях 24Ga/76Fe(0 0 1), 40Ga/60Fe(0 0 1) и 60Ga/40Fe(0 0 1)
Кл.слова (ненормированные):
Fe100-xGax alloys -- Thin film -- Annealing -- Solid-state reaction -- Magnetic properties -- Fe - Ga phase diagram
Аннотация: The A2, B2, D03 phases and dispersive nanoprecipitates play key roles in the nature of super-functional properties, such as the large and sensitive magnetostriction, in Fe100-xGax alloys. However, the temperature conditions for the occurrence of the chemical interaction between Fe and Ga, leading to the synthesis of these phases and nanoprecipitates, remain completely unexplored. Herein we first report results of the start of the chemical interaction at the Ga/Fe(0 0 1) interface and the structural and magnetic phase transformations in 24Ga/76Fe(0 0 1), 40Ga/60Fe(0 0 1) and 60Ga/40Fe(0 0 1) bilayers from room temperature to 800 °C. For all bilayers the magnetic ordered D03 phase is the first phase which is formed at the Ga/Fe(0 0 1) interface at ∼ 375 °C. When the annealing temperature is increased above 580 °C in 24Ga/76Fe(0 0 1) samples the epitaxial D03(0 0 1) layer begins to develop into the epitaxial magnetic ordered B2(0 0 1) layer, which remains after annealing to 800 °C. In 40Ga/60Fe(0 0 1) samples the epitaxial D03(0 0 1) layer evolves into the epitaxial B2(0 0 1) layer and a new epitaxial layer with interplanar spacing 0.1484 nm (L60ʹ), which has close reflections with L60 nanoprecipitates. The L60ʹ phase exhibits unique magnetic properties, including a large magnetic fourfold anisotropy constant of ∼ 7·105 erg/cm3 and 8-fold anisotropy. The solid-state reactions in 60Ga/40Fe(0 0 1) samples start with the synthesis of D03 nanograins embedded in amorphous phases, whose peaks are centered on D03(0 0 4) and Fe(0 0 2) reflections. Above 700 °C the amorphous phases partially crystallize and the epitaxial magnetic L60ʹ and ordered B2(0 0 1) phases emerge. Dewetting and unidentified secondary precipitations are observed in all samples and their influence on the magnetic properties is discussed. Our results demonstrate not only the complex nature of initial stage Fe100-xGax alloy synthesis, but also predict the low-temperature transformation at ∼ 375 °C in the Fe - Ga phase diagram.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, Krasnoyarsky Rabochiy 31, Krasnoyarsk, 660000, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Akademgorodok 50/24, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Kokh, D.; Кох, Д.; Mikhlin, Y. L.; Matsynin, A. A.; Мацынин, Алексей Александрович; Bondarenko, G. N.
}
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Gudim, I. A.
Magnetic properties of twin trigonal oxiborate with huntite structure. effect of annealing / I. A. Gudim, E. V. Eremin, V. R. Kuchesheva-Titova // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 2, Sect. K : Magnetic semiconductors, multiferroics, topological insulators. - Ст. K.P7. - P. 320-321. - Cited References: 7. - The work on this study was supported by the Russian Science Foundation No. 22-12-20019 . - ISBN 978-5-94469-051-7

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Eremin, E. V.; Еремин, Евгений Владимирович; Kuchesheva-Titova, V. R.; Гудим, Ирина Анатольевна; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan)"Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
}
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Magnetic properties of mn-doped Fe3+xSi1–x films synthesized on soi substrate by low temperature annealing / A. V. Lukyanenko, A. S. Tarasov, I. A. Tarasov [et al.] // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 2, Sect. J : Soft and hard magnetic materials. - Ст. J.P24. - P. 248-249. - Cited References: 6. - The research was funded by Krasnoyarsk Regional Fund of Science . - ISBN 978-5-94469-051-7

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia
Federal Research Center KSC SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Rauckii, M.V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Kosyrev, N. N.; Косырев, Николай Николаевич; Komarov, V. A.; Shanidze, L. V.; Шанидзе, Лев Викторович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Volkov, N. V.; Волков, Никита Валентинович; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
}
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    Solid-state synthesis, dewetting, and magnetic and structural characterization of interfacial FexSn1−x layers in Sn/Fe(001) thin films / V. G. Myagkov, V. S. Zhigalov, L. E. Bykova [et al.] // J. Mater. Res. - 2021. - Vol. 36, Is. 15. - P. 3121-3133, DOI 10.1557/s43578-021-00312-4. - Cited References: 43. - This work was supported by the Russian Foundation for Basic Research together with the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund of Science (Grant #19-43-240003). The work is partially based upon the experiments performed on Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS» . - ISSN 0884-2914
   Перевод заглавия: Твердотельный синтез, смачивание, магнитные и структурные характеристики межфазных слоев FexSn1−x в тонких пленках Sn/Fe(001)
Кл.слова (ненормированные):
Alloy -- Thin film -- Annealing -- Surface reaction -- Phase equilibria -- Magnetic properties
Аннотация: The phase formation sequences in 9Sn/91Fe(001) and 25Sn/75Fe(001) bilayers during thin-film solid-state reactions up to 800°C were investigated using X-ray diffraction, the torque method, and scanning electron microscopy. In both samples, FeSn2, FeSn, α-Fe1−xSnx, Fe5Sn3, α-Fe, and β-Sn were sequentially formed at the initiation temperatures Tini ~ 150°C, ~ 300°C, ~ 550°C, ~ 600°C, and ~ 700°C, respectively. Low-temperature transformations were predicted at temperatures TK1 ~ 150°C and TK2 ~ 300°C, which are absent in the phase equilibrium diagram of the Fe–Sn system. Solid-state dewetting of the 9Sn/91Fe(001) and 25Sn/75Fe(001) bilayers started at temperatures above 550°C. Overall, this work sheds new light on general chemical mechanisms governing the synthesis of intermetallic phases in Sn/Fe(001) thin films, the phase transformations, and the evolution of the dewetting process of FexSn1−x films.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, Krasnoyarsk, 660036, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, 50/24 Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Federal Research Center Krasnoyarsk Science Center, Siberian Branch of the Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Solovyov, L. A.; Matsynin, A. A.; Мацынин, Алексей Александрович; Balashov, Yu. Yu.; Балашов, Юрий Юрьевич; Nemtsev, I. V.; Немцев, Иван Васильевич; Shabanov, A. V.; Шабанов, Александр Васильевич; Bondarenko, G. N.
}
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    Zobov, V. E.
    Sequences of selective rotation operators for three group clustering on qutrits by means quantum annealing / V. E. Zobov, I. S. Pichkovskiy // Proceedings of the International Conference "Micro- and Nanoelectronics – 2021". ICMNE – 2021. - 2021. - Ст. q3-02. - P. 149. - Cited References: 4
   Перевод заглавия: Последовательности селективных операторов поворотов для кластеризации на три группы на кутритах посредством квантового отжига

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Доп.точки доступа:
Pichkovskiy, I. S.; Зобов, Владимир Евгеньевич; "Micro- and Nano-Electronics", International Conference(2021 ; Oct. ; Zvenigorod); "Микро- и наноэлектроника", международная конференция(2021 ; окт. ; Звенигород)Квантовая информатика, симпозиум(2021 ; окт. ; Звенигород); Российская академия наук; Физико-технологический институт имени К.А. Валиева РАН
}
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10.

Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing / I. V. Chepkasov, V. S. Baidyshev, E. V. Sukhanova [et al.] // Appl. Surf. Sci. - 2020. - Vol. 527. - Ст. 146736, DOI 10.1016/j.apsusc.2020.146736. - Cited References: 67. - We thank Dr. Ivan Tarasov for fruitful discussions. The research is carried out using the equipment of the shared research facilities of HPC computing resources at Lomonosov Moscow State University and resources of the Center for the Information and Computing of Novosibirsk State University. The molecular dynamics study of sputtering and annealing iron silicides was supported by the Russian Science Foundation, project no. 16-13-00060-П. All quantum-chemical calculations were supported by Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (No. K2-2020-009) . - ISSN 0169-4332
Кл.слова (ненормированные):
Fe3Si -- Epitaxial films -- Sputtering -- Annealing -- MD simulation
Аннотация: The iron silicides formation during epitaxial film grown process on the (100) and (111) silicon surfaces were investigated using molecular dynamics (MD). The iron and silicon atom deposition rate and silicon substrate temperature influence on the formed iron silicide structure and stoichiometric composition were studied in detail. During the growth of iron silicide crystal structure significant diffusion of the substrate atoms into the forming BCC core occurs, this intensifies with the substrate temperature increase, and the ratio of substrate atoms inside the Fe3Si phase reaches nearly 12%. The BCC structure formation is less active on the (100) surface, and at the temperatures as low as 26 °C and 300 °C the iron silicide crystal phase does not form at all. However, with the temperature increase or the deposition rate decrease, the crystal structure formation processes occur more actively in both cases of (100) and (111) surfaces. Thus, the effect of the deposition rate decrease is identical to the temperature growth. It was shown that the formation of the structured B2 phase of iron silicide in buffer layer between the film and the substrate leads to the inhibition of the mutual diffusion of iron and silicon atoms.

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Skolkovo Institute of Science and Technology, 30, bld. 1 Bolshoy Boulevard, Moscow, 121205, Russian Federation
Katanov Khakas State University, 90 Lenin pr., Abakan, 655017, Russian Federation
Moscow Institute of Physics and Technology (National Research University), 9 Institutskiy per., Dolgoprudny, Moscow Region, 141701, Russian Federation
Emanuel Institute of Biochemical Physics RAS, Moscow, 199339, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 50/38 Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation
EK-MFA, Dept. of Nanostructures, Budapest, Hungary
National University of Science and Technology MISiS, 4 Leninskiy pr., Moscow, 119049, Russian Federation
Plekhanov Russian University of Economics, 36 Stremyanny per., Moscow, 199339, Russian Federation

Доп.точки доступа:
Chepkasov, I. V.; Baidyshev, V. S.; Sukhanova, E. V.; Visotin, M. A.; Высотин, Максим Александрович; Sule, P.; Popov, Z. I.
}
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11.

    Zobov, V. E.
    Associative memory on qutrits by means of quantum annealing / V. Zobov, I. Pichkovskiy // Quantum Inf. Process. - 2020. - Vol. 19, Is. 9. - Ст. 342, DOI 10.1007/s11128-020-02851-x. - Cited References: 23 . - ISSN 1570-0755. - ISSN 1573-1332
   Перевод заглавия: Ассоциативная память на кутритах посредством квантового отжига
Кл.слова (ненормированные):
Quantum adiabatic algorithm -- Quantum annealing -- Qubit -- Qutrit -- Associative memory -- Memory capacity
Аннотация: When associative memory is implemented on the well-studied Hopfield network, patterns are recorded in the interaction constants between binary neurons. These constants are chosen so that each pattern should have its own minimum energy of the system described by the Ising model. In the quantum version of the Hopfield network, it was proposed to recall such states by the adiabatic change of the Hamiltonian in time. Qubits, quantum elements with two states, for example, spins with S=1/2 were considered as neurons. In this paper, for the first time, we study the function of associative memory using three-level quantum elements-qutrits, represented by spins with S=1. We record patterns with the help of projection operators. This choice is due to the need to operate with a state with a zero spin projection, whose interaction with the magnetic field vanishes. We recall the state corresponding to one of the patterns recorded in the memory, or superposition of such states by means of quantum annealing. To equalize the probabilities of finding the system in different states of superposition, an auxiliary Hamiltonian is proposed, which is turned off at the end of evolution. Simulations were performed on two and three qutrits and an increase in the memory capacity after replacing qubits with qutrits was shown.

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RAS, Fed Res Ctr, Kirensky Inst Phys, KSC,SB, Akademgorodok 50,Bld 38, Krasnoyarsk, Russia.

Доп.точки доступа:
Pichkovskiy, I. S.; Пичковский, Иван Сергеевич; Зобов, Владимир Евгеньевич
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12.

Amorphous and Crystalline Nickel Oxide Films Obtained by the Extraction-Pyrolysis Method for Electrochromic Cells / A. L. Belousov, T. N. Patrusheva, A. A. Karacharov [et al.] // Theor. Found. Chem. Eng. - 2020. - Vol. 54, Is. 4. - P. 699-705, DOI 10.1134/S0040579520040041. - Cited References: 8. - This work was performed as part of the program "Research and Development for the Priority Areas of the Russian Science-and-Technology Sector for 2014-2020"; Grant Agreement no. 075-15-2019-1843; the Project Unique Identifier RFMEFI60719X0307 . - ISSN 0040-5795. - ISSN 1608-3431

РУБ Engineering, Chemical
Рубрики:
NIO THIN-FILMS
Кл.слова (ненормированные):
nickel extract -- extraction-pyrolysis technology -- thin film -- annealing -- electrochromic cell
Аннотация: This paper reports studies of thin films of nickel oxide obtained by the extraction–pyrolysis method on glass and quartz substrates at temperatures of 380–600°C. The films have been characterized by atomic force microscopy and X-ray diffraction. It is shown that amorphous and crystalline nickel oxide films are formed on the glass. The grain size depends on the annealing temperature, while increased annealing temperatures lead to recrystallization and a decrease in the grain size in NiO films from 130 to 35 nm.

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Публикация на русском языке Пленки аморфного и кристаллического оксида никеля, полученные экстракционно-пиролитическим методом для электрохромных ячеек [Текст] / А. Л. Белоусов [и др.] // Хим. технол. - 2019. - Т. 20 № 5. - С. 215-221

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Baltic State Tech Univ VOENMEX, St Petersburg 190005, Russia.
Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660036, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia.

Доп.точки доступа:
Belousov, A. L.; Patrusheva, T. N.; Karacharov, A. A.; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Kirik, S. D.; Khol'kin, A. I.; program "Research and Development for the Priority Areas of the Russian Science-and-Technology Sector for 2014-2020" [075-15-2019-1843]; [RFMEFI60719X0307]
}
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13.

    Зобов, Владимир Евгеньевич.
    Последовательности селективных операторов поворотов для создания взаимодействий для квантового отжига на трех кутритах / В. Е. Зобов, И. С. Пичковский // Сибир. физич. журнал. - 2019. - Т. 14, № 1. - С. 5–16 ; Siberian J. Phys., DOI 10.25205/2541-9447-2019-14-1-5-16. - Библиогр.: 23 . - ISSN 2541-9447
   Перевод заглавия: Sequences of Selective Rotation Operators to Engineer Interactions for Quantum Annealing on Three Qutrits
Рубрики:
Теоретическая и математическая физика
Кл.слова (ненормированные):
квантовый отжиг -- факторизация -- кутрит -- селективные операторы поворотов -- quantum annealing -- factorization -- qutrit -- selective rotation operators
Аннотация: Выполнено моделирование факторизации числа 15 на трех кутритах, представленных спинами S = 1, посредством квантового отжига. Предполагается, что сильное односпиновое взаимодействие позволяет селективно влиять на разные переходы между уровнями каждого из трех кутритов. Подобраны последовательности селективных операторов поворотов для создания из диполь-дипольного взаимодействия изменяющегося во времени эффективного гамильтониана, необходимого для решения задачи. Найдена зависимость точности от параметров магнитного поля, полного времени отжига и длительности временных шагов при замене непрерывного изменения гамильтониана на дискретное.
We have done simulating of factorization the number 15 on three qutrits S = 1 by quantum annealing. We assume that strong one-spin interaction allow selectively operate on different transitions between levels of the each qutrit. We present a sequence of selective rotation operators to engineer from dipole-dipole interaction a time-dependent effective Hamiltonian necessary for solving the problem. Also we find dependence of fidelity versus various parameters: magnetic field, total annealing time, and duration of time step, when the continuous variation of the Hamiltonian is replaced by a discrete one.

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Держатели документа:
Институт физики им. Л. В. Киренского СО РАН, Академгородок, 50, стр. 38, Красноярск, 660036, Россия
Сибирский федеральный университет, ул. Киренского, 28, Красноярск, 660074, Россия

Доп.точки доступа:
Пичковский, И. С.; Pichkovskiy, I. S.; Zobov, V. E.

}
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14.

    Zobov, V. E.
    Sequences of selective rotation operators to engineer interactions for quantum annealing on three qutrits / V. E. Zobov, I. S. Pichkovskiy ; ed.: V. F. Lukichev, K. V. Rudenko // Proc. SPIE. - 2019. - Vol. 11022: International Conference on Micro- and Nano-Electronics 2018. - Ст. UNSP 110222V, DOI 10.1117/12.2521253. - Cited References: 21
   Перевод заглавия: Последовательности селективных операторов поворотов для создания взаимодействий для квантового отжига на трех кутритах

РУБ Nanoscience & Nanotechnology + Optics
Рубрики:
ALGORITHM
Кл.слова (ненормированные):
quantum annealing -- factorization -- qutrit -- selective rotation operators
Аннотация: We have done simulating of factorization the number 15 on three qutrits, represented by the spins S = 1, by quantum annealing. We assume that strong one-spin interaction allow selectively operate on different transitions between levels of the each qutrit. We present a sequence of selective rotation operators to engineer from dipole-dipole interaction a time-dependent effective Hamiltonian necessary for solving the problem. Also we find dependence of fidelity versus different parameters: magnetic field, total annealing time, and duration of time step, when the continuous variation of the Hamiltonian is replaced by a discrete one.

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Держатели документа:
KSC SB RAS, Kirensky Inst Phys, Fed Res Ctr, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660074, Russia.

Доп.точки доступа:
Pichkovskiy, I. S.; Lukichev, V.F. \ed.\; Rudenko, K.V. \ed.\; Зобов, Владимир Евгеньевич; International Conference on Micro- and Nano-Electronics(2018 ; Oct. ; 1-5 ; Zvenigorod, Russia)
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15.

    Пленки аморфного и кристаллического оксида никеля, полученные экстракционно-пиролитическим методом для электрохромных ячеек / А. Л. Белоусов [и др.] // Хим. технол. - 2019. - Т. 20, № 5. - С. 215-221, DOI 10.31044/1684-5811-2019-20-5-215-221. - Библиогр.: 8 . - ISSN 1684-5811
   Перевод заглавия: Films of amorphous and crystalline nickel oxide, produced by extraction-pyrolitic method for electrochromic cells
Кл.слова (ненормированные):
экстракты никеля -- экстракционно-пиролитическая технология -- тонкие пленки -- отжиг -- электрохромная ячейка -- nickel extract -- extraction-pyrolitic technology -- thin film -- annealing -- electrochromic cell
Аннотация: Представлены исследования тонких пленок оксида никеля, полученных экстракционно-пиролитическим методом на стеклянных и кварцевых подложках при температурах 380-600 °С. Пленки охарактеризованы методами атомно-силовой микроскопии и рентгеновской дифракции. Показано, что на стекле формируются аморфные, а на кварце - кристаллические пленки оксида никеля. Размер зерна в пленках зависит от температуры отжига, при этом повышенные температуры отжига приводят к рекристаллизации и снижению размера зерна в пленках NiO от 130 до 35 нм.
Study results of thin films of nickel oxide, produced by the extraction-pyrolitic method on glass and quartz substrates at temperatures 380-600 °С are presented. The film characteristics were obtained by the methods of atomic-force microscopy and X-ray diffraction. It has been found out that amorphous films are formed on glass and crystalline ones of nickel oxide are formed on quartz. Grain dimensions in the films depend on annealing temperature.

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Переводная версия Amorphous and Crystalline Nickel Oxide Films Obtained by the Extraction-Pyrolysis Method for Electrochromic Cells [Текст] / A. L. Belousov, T. N. Patrusheva, A. A. Karacharov [et al.] // Theor. Found. Chem. Eng. - 2020. - Vol. 54 Is. 4.- P.699-705

Держатели документа:
Балтийский государственный технический университет Военмех им. Д. Ф. Устинова
Институт общей и неорганической химии РАН
Институт физики им. Киренского СО РАН
Институт химии и химической технологии СО РАН
Сибирский федеральный университет

Доп.точки доступа:
Белоусов, А.Л.; Belousov A.L.; Патрушева, Т.Н.; Patrusheva T.N.; Карачаров, А.А.; Karacharov A.A.; Иваненко, Александр Анатольевич; Ivanenko, A. A.; Кирик, С.Д.; Kirik S.D.; Холькин, А.И.; Kholkin A.I.
}
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16.

Zobov, V. E.
Associative memory on qutrits by means of quantum annealing / V. E. Zobov, I. S. Pichkovskiy // International Conference “Magnetic Resonance – Current State and Future Perspectives” (EPR-75) : book of abstracts. - Kazan, 2019. - P. 63. - Cited References: 6

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Pichkovskiy, I. S.; Зобов, Владимир Евгеньевич; "Magnetic Resonance - Current State and Future Perspectives", International Conference(2019 ; Sept. ; 23-27 ; Kazan, Russia); Казанский (Приволжский) федеральный университетКазанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН
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17.

Synthesis and transport properties of FET based on Heusler alloy thin films formed by rapid thermal annealing / A. V. Lukyanenko [et al.] // J. Phys.: Conf. Ser. - 2019. - Vol. 1410. - Ст. 012017, DOI 10.1088/1742-6596/1410/1/012017. - Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 17-02-00302 and supported in part by the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences, project II.8.70, and the Presidium of the Russian Academy of Sciences, Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies». . - ISSN 1742-6588. - ISSN 1742-6596

РУБ Crystal growth and structural properties of semiconductor materials and nanostructures

Аннотация: In this work we show a preparation technique of Co2FeSi full-Heusler alloy thin films on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The films of the Co2FeSi alloy were formed by a silicidation reaction, caused by RTA, between the ultrathin SOI (001) layer and the Fe/Co layers deposited on it. It is assumed that this technology is compatible with the process of formation of a half-metal source-drain in an advanced CMOS and SOI technology and will be applicable for the manufacture of a source-drain of a field-effect transistor. Schottky barrier field-effect transistors (FET) with a back-gate, based on silicon nanowires with source and drain of a Co2FeSi film, synthesized on an SOI substrate, were manufactured. The transport properties of the device were investigated.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk 660041, Russia
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk 660037, Russia

Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, L. V.; Шанидзе, Лев Викторович; Yakovlev, I. A.; Яковлев, Иван Александрович; Zelenov, F. V.; Зеленов, Ф. В.; Masugin, A. N.; Масюгин, Альберт Николаевич; Ivanov, A. B.; Иванов, А. Б.; Baron, F. A.; Барон, Филипп Алексеевич; Volkov, N. V.; Волков, Никита Валентинович; International School and Conference on optoelectronics, photonics, engineering and nanostructures(6 ; 2019 ; 22-25 April ; Saint Petersburg)
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18.

The effect of annealing on the structure and phase transitions of Na0.95Li0.05NbO3 / E. V. Bogdanov [et al.] // Ninth international seminar on ferroelastic physics (ISFP-9) : book of abstracts / org. com. I. N. Flerov [et al.] ; progr. com. V. I. Zinenko [et al.]. - 2018. - P. 26

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Материалы конференции

Доп.точки доступа:
Bunina, O. A.; Kuprina, Yu. A.; Lutokhin, A. G.; Raevskaya, S. I.; Titov, V. V.; Orlov, S. V.; Malitskaya, M. A.; Gorev, M. V.; Горев, Михаил Васильевич; Bondarev, V. S.; Бондарев, Виталий Сергеевич; Raevski, I. P.; International Seminar on Ferroelastic Physics(9 ; 2018 ; Sept. ; 12-15 ; Voronezh); Международный семинар по физике сегнетоэластиков(9(14) ; 2018 ; сент. ; 12-15 ; Воронеж); Российская академия наук; Воронежский государственный технический университет
}
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19.

Modeling of quantum annealing in the ternary system: the factorization of the number 551 / scientific supervisor V. E. Zobov ; language advisor I. V. Alekseenko // Соврем. проблемы радиоэлектроники : сб. науч. трудов : электронное издание / ред. А. И. Громыко. - Красноярск : СФУ, 2018. - С. 496-499. - Библиогр.: 6 . - ISBN 978-5-7638-3902-9
Аннотация: In this paper we present the decision of one of the most hard combination problem with qutrit, factorization number. We present two factors that form this number. Knowing the length of one of them, the problem is simplified and can be resolved. Our work solves the problem of factorization of number 551 with the length of multiplier, which equals 4.

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Держатели документа:
Сибирский федеральный университет, Институт инженерной физики и радиоэлектроники
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Громыко, А. И. \ред.\; Pichkovskiy, I. S.; Zobov, V. E.; Зобов, Владимир Евгеньевич; Alekseenko, I. V.; "Современные проблемы радиоэлектроники", всероссийская научно-техническая конференция, посвященная 123-й годовщине Дня радио(21 ; 2018 ; май ; 3-4 ; Красноярск); Сибирский федеральный университет
}
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20.

The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing / M. N. Volochaev [et al.] // J. Phys. Conf. Ser. - 2017. - Vol. 857, Is. 1. - Ст. 012053, DOI 10.1088/1742-6596/857/1/012053. - Cited References: 10 . - ISSN 1742-6588
Кл.слова (ненормированные):
Coatings -- High resolution transmission electron microscopy -- Molecular beam epitaxy -- Silicon -- Transmission electron microscopy -- Phase formations -- Polycrystalline -- Polycrystalline film -- Si(111) substrate -- Vacuum-annealing -- Annealing
Аннотация: The regularities of phase formation and thermal stability in Fe3Si(111)/Si(111) structure at stepped vacuum annealing (350, 450 and 550 °C) were investigated. The layer of 32 nm Fe3Si was deposited onto Si(111) substrate by molecular beam epitaxy at 260 °C. Transmission electron microscopy (TEM) measurements demonstrated that the film thickness increases by ∼19 % at 350 °C annealing without changing the phase composition. The polycrystalline -FeSi sublayer was formed on the interface at 450 °C annealing. Further annealing at 550 °C led to the ∼ 80 nm polycrystalline film formation containing the crystallites of -FeSi, Fe5Si3, and β-FeSi2 phases.

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Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Loginov, Yu. Yu.; Cherkov, A. G.; Kovalev, I. V.; International Conference on Films and Coatings(13th ; St. Petersburg)(18 - 20 April 2017)
}
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