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Peculiarities of the transport and magnetic properties of the cation substituted manganese sulphides / Romanova O.B., Ryabinkina L.I. // Ninth International workshop on Non–Crystalline solids, Porto 2008, p. 60

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна
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Muraev, P. S.
Signatures of quantum chaos and fermionization in the incoherent transport of bosonic carriers in the Bose-Hubbard chain / P. S. Muraev, D. N. Maksimov, A. R. Kolovsky // Phys. Rev. E. - 2024. - Vol. 109, Is. 3. - Ст. L032107, DOI 10.1103/PhysRevE.109.L032107. - Cited References: 34. - The authors acknowledge financial support from the Ministry of Science and Higher Education of Russian Federation (Project No. FSRZ-2023-0006) . - ISSN 2470-0045. - ISSN 2470-0053
Аннотация: We analyze the stationary current of Bose particles across the Bose-Hubbard chain connected to a battery, focusing on the effect of interparticle interactions. It is shown that the current magnitude drastically decreases as the strength of interparticle interactions exceeds the critical value which marks the transition to quantum chaos in the Bose-Hubbard Hamiltonian. We found that this transition is well reflected in the nonequilibrium many-body density matrix of the system. Namely, the level-spacing distribution for eigenvalues of the density matrix changes from Poisson to Wigner-Dyson distributions. With the further increase of the interaction strength, the Wigner-Dyson spectrum statistics change back to the Poisson statistics which now marks fermionization of the Bose particles. With respect to the stationary current, this leads to the counter-intuitive dependence of the current magnitude on the particle number.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Centre KSC SB RAS, 660036 Krasnoyarsk, Russia
School of Engineering Physics and Radio Electronics, Siberian Federal University, 660041 Krasnoyarsk, Russia
IRC SQC, Siberian Federal University, 660041 Krasnoyarsk, Russia

Доп.точки доступа:
Maksimov, D. N.; Максимов, Дмитрий Николаевич; Kolovsky, A. R.; Коловский, Андрей Радиевич; Мураев, Павел Сергеевич
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    Quantum transport via dot devices with arbitrarily strong interactions / A. B. Klyuchantsev, D. M. Dzebisashvili // Phys. Scr. - 2023. - Vol. 98, Is. 3. - Ст. 035811, DOI 10.1088/1402-4896/acb61e. - Cited References: 49. - The authors would like to thank V V Val'kov and S.V. Aksenov for fruitful discussions . - ISSN 0031-8949. - ISSN 1402-4896
   Перевод заглавия: Квантовый транспорт через точечные устройства со сколь угодно сильными взаимодействиями
Кл.слова (ненормированные):
non-equilibrium Green’s function -- Hubbard operator -- quantum transport -- quantum dot -- Anderson impurity model
Аннотация: The paper develops a theory of tunneling electron transport through atomic-scale systems (or briefly quantum dots) with arbitrarily strong interaction. The theory is based on a diagram technique for nonequilibrium Green’s functions defined on Hubbard operators. The use of Hubbard operators, describing many-body states of an entire quantum dot, makes it possible to represent the Hamiltonian of the quantum dot in a universal diagonal form and consider its coupling with two leads within the perturbation theory. It is shown that in the case when all Hubbard operators are defined for the same site, some rules of the diagram technique for Hubbard operators, initially developed for lattice models, have to be modified. As an example of the application of the modified theory, the current-voltage characteristics of the single-impurity Anderson model with infinitely large Coulomb repulsion are calculated. It is shown that taking into account the multiple electron tunneling processes with spin flips results in the dip in the center of the Lorentz distribution peak, describing the density of states of the one level Anderson impurity coupled with two leads. The emergence of this dip in the density of states leads to a peculiar feature in the bias voltage dependence of the differential conductivity, which can be detected experimentally.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS 660036, Krasnoyarsk, Russia

Доп.точки доступа:
Klyuchantsev, A. B.; Dzebisashvili, D. M.; Дзебисашвили, Дмитрий Михайлович
}
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Use of magnetic resonance imaging in petroleum research: Potentialities and prospects (a Review) / E. V. Morozov, D. A. Sandzhieva, A. G. Dedov, V. M. Buznik // Pet. Chem. - 2023. - Vol. 63, Is. 1. - P. 52-66, DOI 10.1134/S0965544123020196. - Cited References: 76. - The study was supported by the Russian Science Foundation (project no. 22-13-00410, http://rscf.ru/project/22-13-00410/) . - ISSN 0965-5441. - ISSN 1555-6239
Кл.слова (ненормированные):
magnetic resonance imaging -- crude oil -- transport -- stability -- deposits
Аннотация: Potentialities of magnetic resonance imaging (MRI) in petroleum research are analyzed. Major attention is paid to technical features of the method as applied to oil extraction and preparation. Available published data are systematized. Four key directions of MRI, which undergo active development now, are distinguished: oil in a porous matrix; oil interfaces; destabilization of petroleum systems; transport of crude oils and petroleum systems. Key studies in this field are considered, essential points reflecting the MRI efficiency are presented, and the range of problems that can be solved using MRI, including prospects for further expansion of the application fields, is outlined. The possibilities of studying the morphological, structural, and dynamic aspects of the interaction of crude oils with the environment and the phase behavior of oils under the conditions of intense external actions are discussed. The review favors expansion of the experimental potential of specialists in the field of oil extraction, preparation, and refining, and also in the adjacent fields of physical and colloidal chemistry, chemistry of surface phenomena, and macromolecular chemistry.

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Публикация на русском языке Возможности и перспективы применения магнитно-резонансной томографии в исследовании нефтей (обзор) [Текст] / Е. В. Морозов, Д. А. Санджиева, А. Г. Дедов, В. М. Бузник. - 17 с. // Петролеомика. - 2023. - Т. 3 № 1. - С. 57-73

Держатели документа:
Institute of Chemistry and Chemical Technology, Krasnoyarsk Scientific Center, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Gubkin Russian State University of Oil and Gas (National Research University), Moscow, 119991, Russian Federation
Topchiev Institute of Petrochemical Synthesis, Russian Academy of Sciences, Moscow, 119991, Russian Federation
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, 119991, Russian Federation

Доп.точки доступа:
Morozov, E. V.; Морозов, Евгений Владимирович; Sandzhieva, D. A.; Dedov, A. G.; Buznik, V. M.
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Maksimov, D. N.
Non-Markovian master equation for quantum transport of fermionic carriers / D. N. Maksimov, S. Aksenov, A. R. Kolovsky // J. Phys. Condens. Matter. - 2023. - Vol. 36, Is. 4. - Ст. 045301, DOI 10.1088/1361-648X/ad0351. - Cited References: 42. - We acknowledge financial support from Russian Science Foundation through Grant No. 19-12-00167 . - ISSN 0953-8984. - ISSN 1361-648X
Кл.слова (ненормированные):
quantum transport -- master equation -- non-equilibrium Green’s functions
Аннотация: We propose a simple, yet feasible, model for quantum transport of fermionic carriers across tight-binding chain connecting two reservoirs maintained at arbitrary temperatures and chemical potentials. The model allows for elementary derivation of the master equation for the reduced single particle density matrix in a closed form in both Markov and Born approximations. In the Markov approximation the master equation is solved analytically, whereas in the Born approximation the problem is reduced to an algebraic equation for the single particle density matrix in the Redfield form. The non-Markovian equation is shown to lead to resonant transport similar to Landauer's conductance. It is shown that in the deep non-Markovian regime the transport current can be matched with that obtained by the non-equilibrium Green's function method.

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Держатели документа:
IRC SQC, Siberian Federal University, 660041 Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
School of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Kolovsky, A. R.; Коловский, Андрей Радиевич; Максимов, Дмитрий Николаевич
}
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Growth process, structure and electronic properties of Cr2GeC and Cr2-xMnxGeC thin films prepared by magnetron sputtering / A. S. Tarasov, S. A. Lyaschenko, M. V. Rautskii [et al.] // Processes. - 2023. - Vol. 11, Is. 8. - Ст. 2236, DOI 10.3390/pr11082236. - Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 21-12-00226. - The authors thank the laboratory of the Magnetic MAX Materials created under the Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Division, Russian Academy of Sciences) for assistance . - ISSN 2227-9717
Кл.слова (ненормированные):
MAX phase -- thin film -- magnetron sputtering -- electronic transport -- optical spectra
Аннотация: The growth and phase formation features, along with the influence of structure and morphology on the electronic, optical, and transport properties of Cr2GeC and Cr2-xMnxGeC MAX phase thin films synthesized by magnetron sputtering technique, were studied. It was found that the Cr:Ge:C atomic ratios most likely play the main role in the formation of a thin film of the MAX phase. A slight excess of carbon and manganese doping significantly improved the phase composition of the films. Cr2GeC films with a thicknesses exceeding 40 nm consisted of crystallites with well-developed facets, exhibiting metallic optical and transport properties. The hopping conduction observed in the Cr2-xMnxGeC film could be attributed to the columnar form of crystallites. Calculations based on a two-band model indicated high carrier concentrations N, P and mobility μ in the best-synthesized Cr2GeC film, suggesting transport properties close to single crystal material. The findings of this study can be utilized to enhance the growth technology of MAX phase thin films.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Krasnoyarsk Scientific Center, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lyashchenko, S. A.; Лященко, Сергей Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Andryushchenko, T. A.; Андрющенко, Татьяна Александровна; Solovyov, Leonid A.; Yakovlev, I. A.; Яковлев, Иван Александрович; Maximova, O. A.; Максимова, Ольга Александровна; Shevtsov, D. V.; Шевцов, Дмитрий Валентинович; Bondarev, M. A.; Бондарев, Михаил Александрович; Bondarev, I. A.; Бондарев, Илья Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Varnakov, S. N.; Варнаков, Сергей Николаевич
}
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Growth, magnetic and transport properties of highly ordered Mn5Ge3 thin film on Si(111) / A. V. Lukyanenko, A. S. Tarasov, I. A. Yakovlev [et al.] // V International Baltic Conference on Magnetism. IBCM : Book of abstracts. - 2023. - P. 59. - Cited References: 4. - РНФ № 23-22-10033 ; Регион. науч. фонд

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Siberian Federal University

Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Sukhachev, A. L.; Сухачев, Александр Леонидович; Rudenko, R. Yu.; Руденко, Роман Юрьевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Volkov, N. V.; Волков, Никита Валентинович; International Baltic Conference on Magnetism(5 ; 2023 ; Aug. 20-24 ; Svetlogorsk, Russia); Балтийский федеральный университет им. И. Канта
}
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Electronic transport in Cr2GeC and Cr2-xMnxGeC thin films grown by magnetron sputtering / A. S. Tarasov, M. V. Rautskii, A. V. Lukyanenko [et al.] // V International Baltic Conference on Magnetism. IBCM : Book of abstracts. - 2023. - P. 130. - Cited References: 5. - РФН № 21-12-00226

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Siberian Federal University

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Bondarev, M. A.; Бондарев, Михаил Александрович; Lyashchenko, S. A.; Лященко, Сергей Александрович; Andryushchenko, T. A.; Varnakov, S. N.; Варнаков, Сергей Николаевич; International Baltic Conference on Magnetism(5 ; 2023 ; Aug. 20-24 ; Svetlogorsk, Russia); Балтийский федеральный университет им. И. Канта
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Ferromagnetic silicides and germanides epitaxial films and multilayered hybrid structures: Synthesis, magnetic and transport properties / A. S. Tarasov, A. V. Lukyanenko, I. A. Yakovlev [et al.] // Bull. Russ. Acad. Sci.: Phys. - 2023. - Vol. 87, Suppl. 1. - P. S133-S146, DOI 10.1134/S1062873823704518. - Cited References: 54. - The authors thank the laboratory of Magnetic MAX Materials created under Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Branch, Russian Academy of Sciences) for assistance. The authors also thank Professor B.A. Belyaev for FMR calculations. - Supported by the Russian Science Foundation, grant no. 23-22-10033, https://rscf.ru/project/23-22-10033/, Krasnoyarsk Regional Fund of Science . - ISSN 1062-8738. - ISSN 1934-9432
Кл.слова (ненормированные):
iron silicide -- manganese germanide -- MBE -- FMR -- electronic transport -- spintronics
Аннотация: Planar and vertical hybrid structures, which combine ferromagnetic and semiconductor layers are essential for implementation and study of spin transport phenomena in semiconductors, which is crucial for the advancement and development of spintronics. We have developed approaches for the synthesis of Fe3 + xSi1 – x epitaxial thin films and demonstrated the spin accumulation effect in multiterminal devices based on Fe3 + xSi1 – x/Si. Fe3 + xSi1 – x/Ge/Fe3Si and Fe3 + xSi1 – x/Ge/Mn5Ge3 multilayer hybrid structures were synthesized on a Si(111) substrate, study of their structural, magnetic and transport properties were performed. The effect of synthesis conditions on the growth of epitaxial structures and on their magnetic and transport properties was discussed. The results obtained may prove valuable in the development and fabrication of spintronic devices.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences, 660036, Krasnoyarsk, Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041, Krasnoyarsk, Russia
Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences, 660036, Krasnoyarsk, Russia

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Bondarev, I. A.; Бондарев, Илья Александрович; Sukhachev, A. L.; Сухачев, Александр Леонидович; Shanidze, L. V.; Шанидзе, Лев Викторович; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович
}
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10.

Electrosound and asymmetry of the I-V characteristic induced by ultrasound in the RexMn1-xS (Re = Tm, Yb) / S. Aplesnin, M. Sitnikov, O. Romanova [et al.] // Eur. Phys. J. Plus. - 2022. - Vol. 137, Is. 2. - Ст. 226, DOI 10.1140/epjp/s13360-022-02432-0. - Cited References: 46. - This study was supported by the Russian Foundation for Basic Research and the Belarussian Republic Foundation for Basic Research (Project No. 20-52-00005). The investigation ofmicrostructural properties of the sampleswas carried out using equipment's (SEM and TEM) the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center " Krasnoyarsk Science Center SB RAS". The authors are grateful to A.V. Shabanov, senior researcher of the Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, for the scanning electron microscopy investigations . - ISSN 2190-5444

РУБ Physics, Multidisciplinary
Рубрики:
ACOUSTIC CHARGE-TRANSPORT
   WAVES
   SEMICONDUCTOR
   ATTENUATION
Аннотация: A correlation between the temperatures corresponding to the maxima of the sound attenuation and temperature resistance coefficient in the RexMn1-xS solid solutions related to the condensation of electrons and holes has been established. X-ray diffraction, energy-dispersive X-ray spectrum, and scanning electron microscope techniques have been used to investigate the microstructure of the samples. In the Yb0.2Mn0.8S compound, a decrease in the ultrasound attenuation with increasing temperature has been observed. The functional dependences of the electrosound on the ultrasound intensity and carrier type and the change in the electrosound sign with temperature have been established. The asymmetry of the I-V characteristic depending on the ultrasound intensity and the attenuation coefficient depending on the electric field has been found. The nonlinear attenuation of the ultrasound as a function of the intensity has been observed. Model of elastic and inelastic scattering of current carriers by acoustic phonons, deformation interaction is used to explain the asymmetry.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, Maxim; Romanova, O. B.; Романова, Оксана Борисовна; Kharkov, Anton; Begisheva, Olga; Zelenov, Fyodor; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarussian Republic Foundation for Basic Research [20-52-00005]
}
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11.

Muraev, P. S.
Resonant transport of bosonic carriers through a quantum device / P. S. Muraev, D. N. Maksimov, A. R. Kolovsky // Phys. Rev. A. - 2022. - Vol. 105, Is. 1. - Ст. 013307, DOI 10.1103/PhysRevA.105.013307. - Cited References: 16. - This work was supported by Russian Science Foundation Grant No. N19-12-00167 . - ISSN 2469-9926. - ISSN 2469-9934

РУБ Optics + Physics, Atomic, Molecular & Chemical

Аннотация: We analyze the current of Bose particles across a tight-binding chain connected at both ends to the particles' reservoirs. Unlike the standard open Bose-Hubbard model, where the presence of reservoirs is taken into account by the Lindbladians acting on the first and last sites of the chain, we use semimicroscopic models for the reservoirs. This allows us to address the case of arbitrary reservoir temperature. In particular, we discuss the phenomenon of the resonant transmission for nearly condensed bosons, where the current across the chain is significantly enhanced for certain values of the gate voltage.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Sch Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
Siberian Fed Univ, IRC SQC, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Maksimov, D. N.; Максимов, Дмитрий Николаевич; Kolovsky, A. R.; Коловский, Андрей Радиевич; Мураев, Павел Сергеевич; Russian Science FoundationRussian Science Foundation (RSF) [N19-12-00167]
}
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12.

Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties / A. S. Tarasov, I. A. Tarasov, I. A. Yakovlev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст. 131, DOI 10.3390/nano12010131. - Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991

РУБ Chemistry, Multidisciplinary + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
FILMS
   ANISOTROPY
   SI(001)
   DEVICES
   SURFACE
   GROWTH
Кл.слова (ненормированные):
iron silicide -- germanium -- molecular beam epitaxy -- epitaxial stress -- lattice distortion -- dislocation lattices -- FMR -- Rutherford backscattering -- spintronics
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
RAS, Boreskov Inst Catalysis SB, Synchrotron Radiat Facil SKIF, Nikolskiy Prospekt 1, Koltsov 630559, Russia.
Immanuel Kant Balt Fed Univ, REC Smart Mat & Biomed Applicat, Kaliningrad 236041, Russia.
Immanuel Kant Balt Fed Univ, REC Funct Nanomat, Kaliningrad 236016, Russia.
Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany.
Univ Duisburg Essen, Ctr Nanointegrat, D-47057 Duisburg, Germany.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, Dmitriy D.; Goikhman, Aleksandr Yu.; Belyaev, B. A.; Беляев, Борис Афанасьевич; Baron, F. A.; Барон, Филипп Алексеевич; Shanidze, Lev V.; Шанидзе, Лев Викторович; Farle, M.; Фарле, Михаель; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
}
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13.

Influence of a strong magnetic field on the ac transport properties of Fe/SiO2/n-Si MIS structure / D. A. Smolyakov, M. V. Rautskii, I. A. Bondarev [et al.] // J. Exp. Theor. Phys. - 2022. - Vol. 135, Is. 3. - P. 377-382, DOI 10.1134/S1063776122090102. - Cited References: 38. - The authors thank the administration of the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Division, Russian Academy of Sciences) for assistance. The authors also thank D.A. Balaev for valuable discussion and M.N. Volochaev for submission of PEM images. This study was supported by the Russian Foundation for Basic Research, Krasnoyarsk Region government, and Krasnoyarsk Region Foundation for research-and-engineering activity (grant no. 20-42-243007) . - ISSN 1063-7761
Кл.слова (ненормированные):
Ac transports -- Impurity state -- Magnetic-field -- Magneto-impedance effects -- MIS structure -- Real part -- Schottky diodes -- State energy -- Strong magnetic fields -- Temperature dependence
Аннотация: The ac transport properties of a Fe/SiO2/n-Si MIS structure made in the form of a Schottky diode have been studied in magnetic fields up to 9 T. A shift in the maxima of the temperature dependences of the impedance real part observed in the magnetic field is accompanied by the magnetoimpedance effect and takes place only at a certain relative orientation between the magnetic field and the surface of the sample. It has been found that the magnetoimpedance effect is related to the recharge of impurity states. Impurity state energy Es in the presence and absence of the magnetic field has been calculated. The impurity state energy is a nonlinear function of magnetic field and can be qualitatively characterized in terms of the theory of the Zeeman giant effect in diluted magnetic semiconductors. Other mechanisms of magnetic field influence on ac transport in MIS structures, specifically, on the impurity state recharge, cannot be disregarded either. This points calls for further investigation. Obtained data may provide a deeper insight into the nature of magnetoresistive effects in semiconductors and be used to design new-generation microelectronic devices.

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Публикация на русском языке Влияние сильного магнитного поля на транспортные свойства МДП-структуры Fe/SiO2/n-Si на переменном токе [Текст] / Д. А. Смоляков, М. В. Рауцкий, И. А. Бондарев [и др.] // Журн. эксперим. и теор. физ. - 2022. - Т. 162 Вып. 3. - С. 432-439

Держатели документа:
Kirenskii Institute of Metal Physics, Krasnoyarsk Scientific Center, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич
}
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14.

Ferromagnetic silicides and germanides epitaxial films and multilayered hybryd structures: synthesys, magnetic and transport properties / I. A. Tarasov, I. A. Yakovlev, M. V. Rautskii [et al.] // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect. : Spintronics and magnetic nanostructures. - Ст. A.O2. - P. 31-32. - Cited References: 10. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory . - ISBN 978-5-94469-051-7

Материалы симпозиума, ,
Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Krasnoyarsk Scientiؤc Center, SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \program com.\; Овчинников, Сергей Геннадьевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Sukhachev, A. L.; Сухачев, Александр Леонидович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
}
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15.

Muraev, P. S.
Ballistic transport of interacting Bose particles in a tight-binding chain / P. S. Muraev, D. N. Maksimov, A. R. Kolovsky // Phys. Rev. E. - 2022. - Vol. 106, Is. 6. - Ст. 064203, DOI 10.1103/PhysRevE.106.064203. - Cited References: 30. - This work has been supported by Russian Science Foundation through Grant No. N19-12-00167 . - ISSN 2470-0045. - ISSN 2470-0053
Кл.слова (ненормированные):
Bosons -- Quantum chemistry -- Transport properties
Аннотация: It is known that the quantum transport of noninteracting Bose particles across a tight-binding chain is ballistic in the sense that the current does not depend on the chain length. We address the question whether the transport of strongly interacting bosons can be ballistic as well. We find such a regime and show that, classically, it corresponds to the synchronized motion of local nonlinear oscillators. It is also argued that, unlike the case of noninteracting bosons, the transporting state responsible for the ballistic transport of interacting bosons is metastable, i.e., the current decays in the course of time. An estimate for the decay time is obtained.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
School of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
IRC SQC, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Maksimov, D. N.; Максимов, Дмитрий Николаевич; Kolovsky, A. R.; Коловский, Андрей Радиевич; Мураев, Павел Сергеевич
}
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16.

Structural, magnetic and transport properties thulium-substituted manganese selenide / O. B. Romanova, S. S. Aplesnin, L. V. Udod [et al.] // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 2, Sect. K : Magnetic semiconductors, multiferroics, topological insulators. - Ст. K.P14. - P. 335-336. - Cited References: 5 . - ISBN 978-5-94469-051-7

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, Russia
Scientific-Practical Materials Research Center NAS, Minsk, Belarus

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Udod, L. V.; Удод, Любовь Викторовна; Yanushkevich, K. I.; Galays, A. I.; Zhivulko, A. M.; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
}
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17.

Effect of weak hubbard repulsion on spectrum and transport in higher-order topological superconductor / S. V. Aksenov, A. D. Fedoseev, M. S. Shustin, A. O. Zlotnikov // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 2, Sect. I : Magnetism and superconductivity. - Ст. I.P1. - P. 153-154. - Cited References: 5. - The study was supported by Russian Science Foundation, project 22-22-20076 . - ISBN 978-5-94469-051-7

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Fedoseev, A. D.; Федосеев, Александр Дмитриевич; Shustin, M. S.; Шустин, Максим Сергеевич; Zlotnikov, A. O.; Злотников, Антон Олегович; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
}
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18.

Topological superconductivity and Majorana states in low-dimensional systems / V. V. Val'kov, M. S. Shustin, S. V. Aksenov [et al.] // Phys.-Usp. - 2022. - Vol. 65, Is. 1. - P. 2-39, DOI 10.3367/UFNe.2021.03.038950. - Cited References: 320. - This review was prepared in the framework of the Russian Foundation for Basic Research (RFBR) grant 19-12-50087. Part of the presented results were obtained in the framework of RFBR projects 19-02-00348, 20-32-70059, and 20-02-00015. S V A expresses his gratitude for support through a grant from the President of the Russian Federation, MK-1641.2020.2. A O Z and M S Sh express their gratitude to the Theoretical Physics and Math ematics Advancement Foundation “BASIS”. M Yu K thanks the Program for Basic Research of the NationalResearch University Higher School of Economics for support . - ISSN 1063-7869
Кл.слова (ненормированные):
low-dimensional system -- Majorana bound state -- spin-orbit coupling -- topological invariant -- Coulomb correlations -- noncollinear magnetism -- topological superconductivity -- quantum transport
Аннотация: We discuss the properties of topologically nontrivial superconducting phases and the conditions for their realization in condensed matter, the criteria for the appearance of elementary Majorana-type excitations in solids, and the corresponding principles and experimental methods for identifying Majorana bound states (MBSs). Along with the well-known Kitaev chain and superconducting nanowire (SW) models with spin-orbit coupling in an external magnetic field, we discuss models of quasi-two-dimensional materials in which MBSs are realized in the presence of noncollinear spin ordering. For finite-length SWs, we demonstrate a cascade of quantum transitions occurring with a change in the magnetic field, accompanied by a change in the fermion parity of the ground state. The corresponding anomalous behavior of the magnetocaloric effect can be used as a tool for identifying MBSs. We devote considerable attention to the analysis of the transport characteristics of devices that contain topologically nontrivial materials. The results of studying the conductance of an Aharonov-Bohm ring whose arms are connected by an SW are discussed in detail. An important feature of this device is the appearance of Fano resonances in the dependence of conductance on the magnetic field when the SW is in a topologically nontrivial phase. We establish a relation between the characteristics of such resonances and the spatial structure of the lowest-energy SW state. The conditions for the occurrence of an MBS in the phase of the coexistence of chiral d+id superconductivity and 120-degree spin ordering are determined in the framework of the t-J-V model on a triangular lattice. We take electron-electron interactions into account in discussing the topological invariants of low-dimensional superconducting materials with noncollinear spin ordering. The formation of Majorana modes in regions with an odd value of a topological ℤ invariant is demonstrated. The spatial structure of these excitations in the Hubbard fermion ensemble is determined.

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Публикация на русском языке Топологическая сверхпроводимость и майорановские состояния в низкоразмерных системах [Текст] : обзор / В. В. Вальков, M. S. Shustin, S. V. Aksenov [и др.] // Успехи физ. наук. - 2022. - Т. 192 № 1. - С. 3-44

Держатели документа:
Kirensky Institute Of Physics, Federal Research Center Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy Of Sciences, Krasnoyarsk, Russian Federation
National Research University Higher School of Economics, ul. Myasnitskaya 20, 101000 Moscow, Russian Federation
Kapitza Institute for Physical Problems, Russian Academy of Sciences, ul. Kosygina 2, 119334 Moscow, Russian Federation

Доп.точки доступа:
Val'kov, V. V.; Вальков, Валерий Владимирович; Shustin, M. S.; Шустин, Максим Сергеевич; Aksenov, S. V.; Аксенов, Сергей Владимирович; Zlotnikov, A. O.; Злотников, Антон Олегович; Fedoseev, A. D.; Федосеев, Александр Дмитриевич; Mitskan, V. A.; Мицкан, Виталий Александрович; Kagan, M. Yu.
}
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19.

Technique for fabricating ferromagnetic/silicon active devices and their transport properties / A. V. Lukyanenko, A. S. Tarasov, L. V. Shanidze [et al.] // J. Surf. Invest. - 2021. - Vol. 15, Is. 1. - P. 65-69, DOI 10.1134/S1027451021010109. - Cited References: 15. - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, the Presidium of the Russian Academy of Sciences (Program no. 32 “Nanostructures: Physics, Chemistry, Biology, and Fundamentals of Technologies”), and the Russian Foundation for Basic Research, the Government of Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243 022 . - ISSN 1027-4510
Кл.слова (ненормированные):
silicon on insulator -- transistor -- Schottky barrier -- electron lithography -- nanowire -- reactive ion etching -- electron transport
Аннотация: Semiconductor nanowires are unique materials for studying nanoscale phenomena; the possibility of forming silicon nanowires on bulk silicon-on-insulator substrates in a top-down process ensures complete incorporation of this technology into integrated electronic systems. In addition, the use of ferromagnetic contacts in combination with the high quality of ferromagnetic–semiconductor interfaces open up prospects for the use of such structures in spintronics devices, in particular, spin transistors. A simple approach is proposed to create semiconductor nanowire-based active devices, specifically, bottom-gate Schottky-barrier field-effect transistors with a metal (Fe) source and drain synthesized on a silicon-on-insulator substrate and the transport characteristics of the designed transistors are investigated.

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Публикация на русском языке Технологический процесс изготовления активных устройств ферромагнетик/кремний и их транспортные свойства [Текст] / А. В. Лукьяненко, А. С. Тарасов, Л. В. Шанидзе [и др.] // Поверхность. - 2021. - № 1. - С. 74-79

Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, L. V.; Шанидзе, Лев Викторович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zelenov, F. V.; Yakovlev, I. A.; Яковлев, Иван Александрович; Bondarev, I. A.; Бондарев, Илья Александрович; Volkov, N. V.; Волков, Никита Валентинович
}
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20.

3D optical vortex lattices / D. A. Ikonnikov, S. A. Myslivets, V. G. Arkhipkin, A. M. Vyunishev // Ann. Phys.-Berlin. - 2021. - Vol. 533, Is. 7. - Ст. 2100114, DOI 10.1002/andp.202100114. - Cited References: 29. - This work was supported by the Russian Science Foundation (Grant No. 19-12-00203).The surface grating was fabricated and characterized at the Center for Collective Use of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences. The authors thank M. N. Volochaev and A. I. Zaitsev for help . - ISSN 0003-3804. - ISSN 1521-3889

РУБ Physics, Multidisciplinary
Рубрики:
MANIPULATION
   PARTICLES
   ARRAY
   BEAMS
   GENERATION
   TRANSPORT
   VORTICES
Кл.слова (ненормированные):
optical lattices -- optical vortices -- Talbot effect
Аннотация: Fresnel diffraction of light beams with a topological charge on a 2D regular amplitude transparency mask is studied. Numerical predictions show that the 3D optical lattices of optical vortices can be formed using the Talbot effect, with these predictions confirmed by the experimental reconstruction of all 3D optical vortex lattices. The periodicity of the 3D optical vortex lattices is determined by the light wavelength and periodicity of a transparency mask. Furthermore, it is shown that the optical vortices are created and annihilated during light propagation behind the mask with the preservation of the total topological charge. The 3D optical vortex lattices are considered to be tolerant to the perturbations induced by trapped particles caused by the features of the Talbot effect. The 3D optical vortex lattices open new possibilities for light-matter interactions and the related applications.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Ikonnikov, D. A.; Иконников, Денис Андреевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Vyunishev, A. M.; Вьюнышев, Андрей Михайлович; Russian Science FoundationRussian Science Foundation (RSF) [19-12-00203]
}
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