Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (5)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=tunneling<.>)

Общее количество найденных документов : 30
Показаны документы с 1 по 20

Understanding quantum scattering properties in terms of purely classical dynamics: Two-dimensional open chaotic billiards / J. A. Mendez-Bermudez [et al.] // Phys. Rev. E. - 2002. - Vol. 66, Is. 4. - Ст. 46207, DOI 10.1103/PhysRevE.66.046207. - Cited References: 34 . - ISSN 1539-3755

РУБ Physics, Fluids & Plasmas + Physics, Mathematical
Рубрики:
BALLISTIC-TRANSPORT
   POINCARE SECTIONS
   CAVITIES
   EIGENFUNCTIONS
   LOCALIZATION
   CHANNEL
Кл.слова (ненормированные):
Chaos theory -- Electron tunneling -- Laser applications -- Nonlinear systems -- Probability -- Waveguide components -- Chaotic motion -- Microlasers -- Quantum scattering -- Scattering probability -- Quantum theory -- article
Аннотация: We study classical and quantum scattering properties of particles in the ballistic regime in two-dimensional chaotic billiards that are models of electron- or micro-waveguides. To this end we construct the purely classical counterparts of the scattering probability (SP) matrix \S(n,m)\(2) and Husimi distributions specializing to the case of mixed chaotic motion (incomplete horseshoe). Comparison between classical and quantum quantities allows us to discover the purely classical dynamical origin of certain general as well as particular features that appear in the quantum description of the system. On the other hand, at certain values of energy the tunneling of the wave function into classically forbidden regions produces striking differences between the classical and quantum quantities. A potential application of this phenomenon in the field of microlasers is discussed briefly. We also see the manifestation of whispering gallery orbits as a self-similar structure in the transmission part of the classical SP matrix.

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico
Univ Hradec Kralove, Dept Phys, Hradec Kralove, Czech Republic
Acad Sci Czech Republ, Inst Phys, Prague, Czech Republic
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Instituto de Fisica, Univ. Autonoma de Puebla, Apartado Postal J-48, Puebla 72570, Mexico
Department of Physics, University Hradec Kralove, Hradec Kralove, Czech Republic
Institute of Physics, Czech Academy of Sciences, Cukrovarnicka 10, Prague, Czech Republic
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Mendez-Bermudez, J. A.; Luna-Acosta, G. A.; Seba, P.; Pichugin, K. N.; Пичугин, Константин Николаевич
}
Найти похожие

On the non-orthogonality problem in the description of quantum devices / J. . Fransson [et al.] // Physica B. - 1999. - Vol. 272, Is. 1-4. - P. 28-30, DOI 10.1016/S0921-4526(99)00343-9. - Cited References: 8 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:

Кл.слова (ненормированные):
non-orthogonality -- current -- tunneling -- Correlation methods -- Electric contacts -- Electric currents -- Electron energy levels -- Electron tunneling -- Equations of motion -- Green's function -- Mathematical operators -- Matrix algebra -- Hubbard operators -- Potential barriers -- Tunneling currents -- Semiconductor quantum dots
Аннотация: An approach which allows to include the corrections from non-orthogonality of electron states in contacts and quantum dots is developed. Comparison of the energy levels and charge distributions of electrons in 1D quantum dot (QD) in equilibrium, obtained within orthogonal (OR) and non-orthogonal representations (NOR), with the exact ones shows that the NOR provides a considerable improvement, for levels below the top of barrier. The approach is extended to non-equilibrium states. A derivation of the tunneling current through a single potential barrier is performed using equations of motion for correlation functions. A formula for transient current derived by means of the diagram technique for Hubbard operators is given for the problem of QD with strongly correlated electrons interacting with electrons in contacts. The non-orthogonality renormalizes the tunneling matrix elements and spectral weights of Green functions. (C) 1999 Elsevier Science B.V. All rights reserved.

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
Univ Uppsala, Condensed Matter Theory Grp, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
Condensed Matter Theory Group, Uppsala University, Box 530, 751 21, Uppsala, Sweden
Kirensky Institute of Physics, RAS, 660036, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Fransson, J.; Eriksson, O.; Johansson, B.; Sandalov, I. S.; Сандалов, Игорь Семёнович; International Conference on Nonequilibrium Carrier Dynamics in Semiconductors(11 ; 1999 ; July ; 19-23 ; Kyoto, Japan)
}
Найти похожие

Alekseev, K. N.
Strange attractor in resonant tunneling / K. N. Alekseev, G. P. Berman, D. K. Campbell // Phys. Rev. B. - 1998. - Vol. 58, Is. 7. - P. 3954-3962, DOI 10.1103/PhysRevB.58.3954. - Cited References: 38 . - ISSN 0163-1829

РУБ Physics, Condensed Matter
Рубрики:
INTRINSIC BISTABILITY
   RING CAVITY
   OPTICAL TURBULENCE
   TRANSMITTED LIGHT
   QUANTUM-WELLS
   OSCILLATIONS
   BARRIERS
   SYSTEM
   STATE
   TIME
Аннотация: We consider the process of resonant electron tunneling through a double-barrier potential, taking into account nonlinear dynamical effects generated by charge accumulation in the interbarrier space. We use the perturbation approach of Davydov and Ermakov, which was developed for investigating intrinsic bistability in resonant tunneling. For incoming electron flow, which is modulated slowly in time, we show that the resulting nonlinear dynamics can become chaotic, with the chaos described (because of the open nature of the system) by a strange attractor. We determine the conditions for the existence of this strange attractor and estimate characteristic experimental parameters for its observation.

WOS,
Читать в сети ИФ
Держатели документа:
LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Univ Calif Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA
Univ Calif Los Alamos Natl Lab, CNLS, Los Alamos, NM 87545 USA
Univ Illinois, Dept Phys, Urbana, IL 61801 USA
ИФ СО РАН

Доп.точки доступа:
Berman, G. P.; Campbell, D. K.
}
Найти похожие

Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure / N. V. Volkov [et al.] // Tech. Phys. Lett. - 2003. - Vol. 29, Is. 3. - P. 200-202, DOI 10.1134/1.1565633. - Cited References: 7 . - ISSN 1063-7850

РУБ Physics, Applied

Аннотация: We have studied the magnetoresistive properties of a structure comprising single crystal manganite Eu0.7Pb0.3MnO3 covered with an epitaxial iron film. At temperatures below T-C of the manganite crystal, the structure exhibits positive magnetoresistance. The behavior of the resistance as a function of the magnetic field is characteristic of a tunneling junction with ferromagnetic electrodes separated by a thin insulating film. The observed effect is related to the formation of a transition layer at the manganite-Fe interface, which is depleted of oxygen and possesses dielectric properties. The sensitivity of the resistance with respect to the magnetic field is determined both by the negative magnetoresistance of the manganite crystal and by the tunneling contribution to the conductivity, whereby the tunneling current depends on the mutual orientation of magnetic moments of the electrodes (Eu0.7Pb0.3MnO3 crystal and Fe film). (C) 2003 MAIK "Nauka/Interperiodica".

WOS,
Читать в сети ИФ
Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk, Russia
Krasnoyarsk State Univ, Krasnoyarsk, Russia
ИФ СО РАН

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Patrin, G. S.; Патрин, Геннадий Семёнович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Sablina, K. A.; Саблина, Клара Александровна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Varnakov, S. N.; Варнаков, Сергей Николаевич
}
Найти похожие

Nesterov, A. I.
Geometric phases and quantum phase transitions in open systems / A. I. Nesterov, S. G. Ovchinnikov // Phys. Rev. E. - 2008. - Vol. 78, Is. 1. - Ст. 15202, DOI 10.1103/PhysRevE.78.015202. - Cited References: 29 . - ISSN 1539-3755

РУБ Physics, Fluids & Plasmas + Physics, Mathematical
Рубрики:
POINTS
DEGENERACIES
Кл.слова (ненормированные):
Chlorine compounds -- Electron tunneling -- Ferromagnetism -- Ising model -- Magnetic fields -- Magnetism -- Open systems -- Quantum electronics -- Quantum optics -- Sedimentation -- Effective Hamiltonian -- Eigenvalues -- First orders -- Geometric phase -- Geometric phases -- Ground-state -- Hermitian -- One-dimensional -- Open quantum systems -- Quantum phase transition -- Quantum phase transitions -- Transverse-magnetic fields -- Phase transitions
Аннотация: The relationship is established between quantum phase transitions and complex geometric phases for open quantum systems governed by a non-Hermitian effective Hamiltonian with accidental crossing of the eigenvalues. In particular, the geometric phase associated with the ground state of the one-dimensional dissipative Ising model in a transverse magnetic field is evaluated, and it is demonstrated that the related quantum phase transition is of the first order.

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
[Nesterov, Alexander I.] Univ Guadalajara, CUCEI, Dept Fis, Guadalajara 44420, Jalisco, Mexico
[Ovchinnikov, S. G.] SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Ovchinnikov, S. G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Departamento de Fisica, CUCEI, Universidad de Guadalajara, Av. Revolucion 1500, Guadalajara, Codigo Postal 44420, Jalisco, Mexico
L. V. Kirensky Institute of Physics, SB, RAS, 660036 Krasnoyarsk, Russian Federation
Siberian Federal University, 660041, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
Найти похожие

Fransson, J.
A perfect spin-filter quantum dot system / J. . Fransson, I. . Sandalov, O. . Eriksson // J. Phys.: Condens. Matter. - 2004. - Vol. 16, Is. 16. - P. L249-L254, DOI 10.1088/0953-8984/16/16/L03. - Cited References: 39 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
NARROW ENERGY BANDS
   ELECTRON CORRELATIONS
   MAGNETIC-FIELD
   MAGNETOTRANSPORT
   CONDUCTANCE
   RESISTANCE
   BARRIER
   FORMULA
   VALVE
   LIMIT
Кл.слова (ненормированные):
Electric potential -- Electron tunneling -- Magnetic couplings -- Magnetic fields -- Magnetic filters -- Transport properties -- Electron correlations -- Magnetic contacts -- Source-drain voltage -- Spin projections -- Semiconductor quantum dots
Аннотация: The discovery of a novel effect in the transport through a QD spin-dependently coupled to magnetic contacts is reported. For a finite range of source-drain voltages the spin projections of the current cancel exactly, resulting in a completely suppressed output current. The spin down current behaves as one normally expects whereas the spin up current becomes negative. As the source-drain voltage is increased the spin up current eventually becomes positive. Thus, tuning the source-drain voltage such that the spin up current vanishes will result in a perfect spin filter.

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
Royal Inst Technol, Dept Phys, KTH, SE-10691 Stockholm, Sweden
Univ Uppsala, Dept Phys, SE-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Max Planck Inst Phys Complex Syst, D-01187 Dresden, Germany
ИФ СО РАН
Department of Physics, Royal Institute of Technology (KTH), SE-106 91 Stockholm, Sweden
Physics Department, Uppsala University, Box 530, SE-751 21 Uppsala, Sweden
Kirensky Institute of Physics, RAS, 660036 Krasnoyarsk, Russian Federation
Max-Plank-Inst. Phys. Complex Sys., Nothnitzer Stra?e 38, 01187 Dresden, Germany
Dept. of Mat. Sci. and Engineering, Royal Institute of Technology, SE-100 44 Stockholm, Sweden

Доп.точки доступа:
Sandalov, I.; Eriksson, O.
}
Найти похожие

Theory of spin filtering through quantum dots / J. . Fransson [et al.] // Phys. Rev. B. - 2003. - Vol. 67, Is. 20. - Ст. 205310, DOI 10.1103/PhysRevB.67.205310. - Cited References: 28 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
DEPENDENT TUNNELING JUNCTIONS
   NARROW ENERGY BANDS
   ELECTRON CORRELATIONS
   MAGNETORESISTANCE
   BARRIER
   POLARIZATION
Аннотация: Using a nonequilibrium diagram technique for Hubbard operator Green functions combined with a generalization of the transfer Hamiltonian formalism, we calculate the transport through a magnetic quantum dot system with spin-dependent couplings to the contacts. In specific regimes of the parameter space the spin-dependent tunnel current becomes more than 99.95% spin polarized, suggesting that a device thus constructed can be used in spin-filter applications. First-principles electronic structure calculations show the existence of nanostructured systems, such as, e.g., MgO/Fe/Pd(5)/Fe/MgO (001), with the desired properties in the direction of the current.

WOS,
Читать в сети ИФ
Держатели документа:
Uppsala Univ, Dept Phys, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Fransson, J.; Holmstrom, E.; Eriksson, O.; Sandalov, I.
}
Найти похожие

Bulgakov, E. N.
Current-voltage characteristics of the resonant tunnelling double-barrier structure under time-periodical perturbation / E. N. Bulgakov, A. F. Sadreev // J. Phys.: Condens. Matter. - 1996. - Vol. 8, Is. 45. - P. 8869-8887, DOI 10.1088/0953-8984/8/45/020. - Cited References: 38 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
SEMICONDUCTOR DOUBLE-BARRIER
   OSCILLATING QUANTUM-WELL
   DEPENDENT TRANSPORT
   INFRARED-RADIATION
   TUNNELING TIMES
   HETEROSTRUCTURES
   TRANSMISSION
   MODEL
   FREQUENCIES
   COHERENT
Аннотация: We consider a typical semiconductor resonant tunnelling GaAs/AlGaAs/GaAs nanostructure which forms a double-barrier potential with quasienergy levels corresponding to transition frequencies in the infrared and microwave regions. Two types of dynamical perturbation of the heterostructure in the form V-1(x, t) = V(1)x cos Omega t and V-2(t) = V-2 cos Omega t are considered. We analyse numerically a reconstruction of the electron transmission through the heterostructure and the current-voltage characteristics (IVC) under the influence of these dynamical perturbations. Both weak and strong perturbations are considered. We investigate the dependences of the transmission on the electron energy and the frequency of the external field with the main accent on the case where a frequency of the perturbation is tuned to a transition between quasienergies of the double-barrier structure. it is found that these resonant phenomena give rise to new peaks and dips in the IVC. In particular, it is shown that the dipole type of perturbation V-1(x, t) gives rise to a Rabi splitting of the transmission peaks and under certain conditions to a Rabi splining of the IVC peaks and dips. We demonstrate that dynamical perturbation may induce a direct current opposite to the direction of the applied voltage, and that this phenomenon takes the form of a sharp dip which has a resonant origin. It is observed that the dipole type of perturbation V-1(x, t) of laser radiation is more effective for tuning the IVC than the first perturbation V-2(t). Also absorption and emission of energy by an electron transmitted through the DBRTS are considered.

WOS,
Scopus
Держатели документа:
Kirensky Institute of Physics, 660036, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
}
Найти похожие

Effect of cotunneling and spin polarization on the large tunneling magnetoresistance effect in granular C60-Co films / S. Sakai [et al.] // Physical Review B: Condensed Matter and Materials Physics. - 2011. - Т. 83, № 17. - P174422, DOI 10.1103/PhysRevB.83.174422 . - ISSN 1098-0121. - ISSN 1550-235X

РИНЦ
Держатели документа:
Advanced Science Research Center,Japan Atomic Energy Agency
Department of Energy Science and Technology,Kyoto University
Institute for Materials Research,Tohoku University
National Institute for Materials Science

Доп.точки доступа:
Sakai, S.; Sugai, I.; Takanashi, K.; Matsumoto, Y.; Entani, S.; Naramoto, H.; Avramov, P.; Maeda, Y.; Mitani, S.
}
Найти похожие

10.

Low-temperature resistivity of polycrystalline (La0.5Eu 0.5)0.7Pb0.3MnO3 in a magnetic fields / K. A. Shaykhutdinov [et al.] // J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5, DOI 10.1088/1742-6596/200/5/052025 . - ISSN 1742-6588
Кл.слова (ненормированные):
Antiferromagnetic grains -- Comparative analysis -- Ferromagnetic grain -- Low temperatures -- Polycrystalline -- Specific heat measurement -- Spin dependent tunneling -- Transport and magnetic properties -- Antiferromagnetism -- Electric resistance -- Europium -- Grain boundaries -- Grain size and shape -- Lanthanum compounds -- Lead -- Magnetic field effects -- Magnetic properties -- Magnetoresistance -- Manganese oxide -- Single crystals -- Thermal variables measurement -- Lanthanum
Аннотация: The effect of grain boundaries on magnetoresistance (MR) of manganites have been investigated by the comparative analysis of the properties of single-crystal and polycrystalline (La0.5Eu0.5) 0.7Pb0.3MnO3. While MR of the single crystal is maximum near the Curie temperature and vanishes in the low-temperature region, the polycrystalline (La0.5Eu0.5)0.7Pb 0.3MnO3 sample exhibits high MR in the low-temperature region. In order to clarify the origin of the low-temperature MR, the transport and magnetic properties of the polycrystalline (La0.5Eu 0.5)0.7Pb0.3MnO3 in magnetic fields have been supplemented by study of magnetic properties and specific heat measurements. The results obtained could be attributed to spin-dependent tunneling between ferromagnetic grains through insulating antiferromagnetic grain boundaries. © 2010 IOP Publishing Ltd.

Scopus,
eLibrary
Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Popkov, S. I.; Попков, Сергей Иванович; Semenov, S. V.; Balaev, D. A.; Балаев, Дмитрий Александрович; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Sablina, K. A.; Саблина, Клара Александровна; Volkov, N. V.; Волков, Никита Валентинович
}
Найти похожие

11.

Kolovsky, A. R.
Bistability and chaos-assisted tunneling in dissipative quantum systems / A. R. Kolovsky // Phys. Rev. E. - 2022. - Vol. 106, Is. 1. - Ст. 014209, DOI 10.1103/PhysRevE.106.014209. - Cited References: 21. - The author acknowledges financial support from the Russian Science Foundation through Grant No. 19-12-00167 . - ISSN 2470-0045
Кл.слова (ненормированные):
Bi-stability -- Chaos-assisted tunneling -- Dissipative quantum systems -- Double resonance -- Driving frequencies -- Limit-cycle -- Multistability -- Non-linear oscillators -- Quantum limit -- Resonance model
Аннотация: We revisit the problem of quantum bi- and multistability by considering the dissipative double resonance model. For a large driving frequency, this system has a simpler phase structure than the driven dissipative nonlinear oscillator, the paradigm model for classical and quantum bistability. This allows us to obtain an analytical estimate for the lifetime of quantum limit cycles. On the other hand, for a small driving frequency, the system is much richer than the nonlinear oscillator. This allows us to address a novel phenomenon of dissipation- and chaos-assisted tunneling between quantum limits cycles.

Смотреть статью,
Scopus
Держатели документа:
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Коловский, Андрей Радиевич
}
Найти похожие

12.

Kolovsky, A. R.
Mott-insulator state of cold atoms in tilted optical lattices: Doublon dynamics and multilevel Landau-Zener tunneling / A. R. Kolovsky, D. N. Maksimov // Phys. Rev. A. - 2016. - Vol. 94, Is. 4. - Ст. 043630, DOI 10.1103/PhysRevA.94.043630. - Cited References: 34 . - ISSN 1050-2947
Кл.слова (ненормированные):
Crystal lattices -- Optical materials -- Analytical expressions -- Cold atoms -- Doublons -- Dynamical response -- In-laboratory experiments -- Landau zener tunneling -- Mott insulator state -- Optical lattices
Аннотация: We discuss the dynamical response of strongly interacting Bose atoms in an adiabatically tilted optical lattice. The analysis is performed in terms of the multilevel Landau-Zener tunneling. Different regimes of tunneling are identified and analytical expressions for the doublon number, which is the quantity measured in laboratory experiments, are derived. © 2016 American Physical Society.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Maksimov, D. N.; Максимов, Дмитрий Николаевич; Коловский, Андрей Радиевич
}
Найти похожие

13.

Resonant tunneling in time-periodically modulated semiconductor nanostructures / G. P. Berman [et al.] // Physica B. - 1996. - Vol. 225, Is. 1-2. - P. 1-22, DOI 10.1016/0921-4526(96)00233-5. - Cited References: 39 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:
DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.

WOS
Держатели документа:
LOS ALAMOS NATL LAB,CNLS,LOS ALAMOS,NM 87545
LV KIRENSKII INST PHYS,DEPT PHYS,KRASNOYARSK 660036,RUSSIA
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ИФ СО РАН

Доп.точки доступа:
Berman, G. P.; Берман, Геннадий Петрович; Bulgakov, E. N.; Булгаков, Евгений Николаевич; Campbell, D. K.; Sadreev, A. F.; Садреев, Алмаз Фаттахович
}
Найти похожие

14.

Switching of current channels and new mechanism of magnetoresistance in a tunneling structure / N. V. Volkov [et al.] // Tech. Phys. Lett. - 2009. - Vol. 35, Is. 11. - P. 990-993, DOI 10.1134/S1063785009110054. - Cited References: 7. - This study was supported by the Russian Foundation for Basic Research (project nos. 08-02-00259 and 08-02-100397) and the Ministry of Education and Science of the Russian Federation (program "Development of Scientific Potential of Higher Education 2009-2010," project no. 2.1.1/6038). . - ISSN 1063-7850

РУБ Physics, Applied

Аннотация: We have experimentally studied the transport properties of a planar La(0.7)Sr(0.3)MnO(3) (LSMO)/Mn-depleted LSMO/MnSi tunneling structure, in which the Mn-depleted LSMO layer plays the role of a potential barrier between the conducting layers of LSMO and MnSi. The measurements were performed in geometry with the current direction parallel to the planes of interfaces in the tunneling structure. It is established that the structure exhibits a nonlinear current-voltage characteristic and possesses a positive magnetoresistance, the value of which depends on the tunneling current. It is suggested that specific features of the transport properties of this structure are related to the phenomenon of current channel switching between the conducting layers. The switching mechanism is based on the dependence of the resistance of the tunneling junction between the conducting layers on the bias voltage and the applied magnetic field.

WOS,
Читать в сети ИФ
Держатели документа:
[Volkov, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Siberian State Aerosp Univ, Krasnoyarsk 660041, Russia
Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
Natl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam
ИФ СО РАН

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tsikalov, V. S.; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Yu, S. C.; Kim, D. H.; Chau, N.; Russian Foundation for Basic Research [08-02-00259, 08-02-100397]; Ministry of Education and Science of the Russian Federation [2.1.1/6038]
}
Найти похожие

15.

Positive magnetoresistance of single-crystal bilayer manganites (La1−zNdz)1.4Sr1.6Mn2O7 / S. I. Popkov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. O4.2. - P. 222. - References: 4 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
bilayer manganites -- positive magnetoresistance -- spin-dependent tunneling

Доп.точки доступа:
Popkov, S. I.; Попков, Сергей Иванович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Nikitin, S. E.; Никитин, Станислав Евгеньевич; Petrov, M. I.; Петров, Михаил Иванович; Terent'yev, K. Yu.; Терентьев, Константин Юрьевич; Semenov, S. V.; Семёнов, Сергей Васильевич; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

Нет сведений об экземплярах }
Найти похожие

16.

Landau-zener tunneling in 2d periodic structures in the presense of a gauge field / D. N. Maksimov [и др.] // V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism : abstracts. - Vladivostok : FEFU, 2013 = EASTMag-2013. - P71 . - ISBN 978-5-7444-3124-2

Доп.точки доступа:
Maksimov, D. N.; Максимов, Дмитрий Николаевич; Chesnokov, I. Yu.; Чесноков, Илья Юрьевич; Makarov, D. V.; Макаров Д.В.; Kolovsky, A. R.; Коловский, Андрей Радиевич; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; Sept. ; 15-21 ; Vladivostok)
}
Найти похожие

17.

Spectrum of localized states in graphene quantum dots and wires / V. V. Zalipaev [et al.] // Phys. Lett. A. - 2013. - Vol. 377, Is. 3-4. - P. 216-221, DOI 10.1016/j.physleta.2012.11.028 . - ISSN 0375-9601
Кл.слова (ненормированные):
Generalized Bohr-Sommerfeld quantization condition -- Graphene -- High-energy eigenstates -- Semiclassical approximation -- Tunneling
Аннотация: We developed semiclassical method and show that any smooth potential in graphene describing elongated a quantum dot or wire may behave as a barrier or as a trapping well or as a double barrier potential, Fabry-Perot structure, for 1D Schrodinger equation. The energy spectrum of quantum wires has been found and compared with numerical simulations. We found that there are two types of localized states, stable and metastable, having finite life time. These life times are calculated, as is the form of the localized wave functions which are exponentially decaying away from the wire in the perpendicular direction. В© 2012 Elsevier B.V. All rights reserved.

Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Univ Loughborough, Dept Math Sci, Loughborough LE11 3TU, Leics, England
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Univ Loughborough, Dept Phys, Loughborough LE11 3TU, Leics, England

Доп.точки доступа:
Zalipaev, V. V.; Maksimov, D. N.; Максимов, Дмитрий Николаевич; Linton, C. M.; Kusmartsev, F. V.
}
Найти похожие

18.

Ba0.6K0.4BiO3 single crystal as a multiple Josephson system: New coherent effect? / L. N. Zherikhina [et al.] // Journal of Physics: Conference Series. - 2012. - Vol. 400, Pt. 2. - Ст. 022146. - P. , DOI 10.1088/1742-6596/400/2/022146 . - ISSN 1742-6588
Кл.слова (ненормированные):
Antiphase -- Coherent effect -- Electric transport -- High-T -- Inhomogeneous superconductors -- Josephson -- Josephson junctions -- Josephson tunneling -- Non-linear I-V -- Polycrystalline samples -- Superconducting gaps -- Superconducting state -- Low temperature effects -- Low temperature engineering -- Magnetic fields -- Superconductivity -- Single crystals
Аннотация: The existence of space inhomogeneous superconductor insulator state (SISIS) found out earlier in polycrystalline samples of high-Tc system Ba0.6K0.4BiO3 (Tc?30 K) is confirmed on Ba0.6K0.4BiO3 single crystal. At T* (T*<Tc, T*?17 K) the transition from the homogeneous superconducting state into the SISIS occurs. SISIS is characterized by the appearance of two gapes on the Fermi surface: semi- and superconducting, that are modulated in space in antiphase, the electric transport between superconducting regions being carried out due to Josephson tunneling. Thus the whole sample becomes a multiple Josephson system. Nonlinear I-V curves, depended on temperature and magnetic field, that are typical to a Josephson system, are observed on Ba0.6K0.4BiO3 single crystal at temperatures below T*. Besides, a step like peculiarity at the values of voltage of the order of one and two superconducting gaps shows up. These peculiarities are suppressed by magnetic field much earlier then critical current. Perhaps the last phenomenon is the consequence of "coherent" state of several successive Josephson junctions, appeared in the exfoliation state. В© Published under licence by IOP Publishing Ltd.

Scopus

Доп.точки доступа:
Zherikhina, L. N.; Tskhovrebov, A. M.; Klinkova, L. A.; Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; International Conference on Low Temperature Physics(26 ; 2011 ; Aug. ; 1-17 ; Beijing, China)
}
Найти похожие

19.

    Val'kov, V. V.
    Fano effect upon tunneling of a spin-polarized electron through a single magnetic impurity / V.V. Val'kov, S. V. Aksenov, E. A. Ulanov // Low Temp. Phys. - 2013. - Vol. 39, no. 1. - P. 35-38 ; Физика низких температурDOI 10.1063/1.4775746
   Перевод заглавия: Эффект Фано при туннелировании спин-поляризованного электрона через одиночную магнитную примесь
Аннотация: The calculations of transport characteristics of a single magnetic impurity showed that the presence of different effective channels for electron transmission results in the Fano effect. It was noticed that the external magnetic field and gate voltage allow controlling the conducting properties, which are governed by the configuration interaction between the states of the system

Смотреть статью

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Ulanov, E. A.; Вальков, Валерий Владимирович

}
Найти похожие

20.

Аксенов, Сергей Владимирович.
Индуцирование спин-флип-процессами резонанса Фано при туннелировании электрона через спиновые структуры атомного масштаба [Текст] / В. В. Вальков, С. В. Аксенов, Е. А. Уланов // Журн. эксперим. и теор. физ. - 2013. - Т. 143, Вып. 5. - С. 984-990DOI 10.7868/S0044451013050248
Аннотация: Показано, что включение неупругих спин-зависящих процессов рассеяния электрона на потенциальных профилях одиночной магнитной примеси и спинового димера инициирует резонансные особенности, обусловленные эффектом Фано, в транспортных характеристиках таких спиновых структур атомного масштаба. Для реализации резонанса и антирезонанса Фано принципиальную роль играют спин-флип-процессы, приводящие к конфигурационному взаимодействию состояний системы. Установлено, что приложение внешнего магнитного поля и электрического поля затвора позволяет радикально изменять проводящие свойства спиновых структур через резонансный механизм Фано

Смотреть статью,
Читать в сети ИФ

Переводная версия Spin-flip induction of Fano resonance upon electron tunneling through atomic-scale spin structures. - [Б. м. : б. и.]

Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Aksenov, S. V.; Уланов, Е. А.
}
Найти похожие