Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (5)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=tunneling<.>)

Общее количество найденных документов : 30
Показаны документы с 1 по 20

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Mendez-Bermudez J. A., Luna-Acosta G. A., Seba P., Pichugin K. N.
Заглавие : Understanding quantum scattering properties in terms of purely classical dynamics: Two-dimensional open chaotic billiards
Место публикации : Phys. Rev. E: AMER PHYSICAL SOC, 2002. - Vol. 66, Is. 4. - Ст.46207. - ISSN 1539-3755, DOI 10.1103/PhysRevE.66.046207
Примечания : Cited References: 34
Предметные рубрики: BALLISTIC-TRANSPORT
POINCARE SECTIONS
CAVITIES
EIGENFUNCTIONS
LOCALIZATION
CHANNEL
Ключевые слова (''Своб.индексиров.''): chaos theory--electron tunneling--laser applications--nonlinear systems--probability--waveguide components--chaotic motion--microlasers--quantum scattering--scattering probability--quantum theory--article
Аннотация: We study classical and quantum scattering properties of particles in the ballistic regime in two-dimensional chaotic billiards that are models of electron- or micro-waveguides. To this end we construct the purely classical counterparts of the scattering probability (SP) matrix \S(n,m)\(2) and Husimi distributions specializing to the case of mixed chaotic motion (incomplete horseshoe). Comparison between classical and quantum quantities allows us to discover the purely classical dynamical origin of certain general as well as particular features that appear in the quantum description of the system. On the other hand, at certain values of energy the tunneling of the wave function into classically forbidden regions produces striking differences between the classical and quantum quantities. A potential application of this phenomenon in the field of microlasers is discussed briefly. We also see the manifestation of whispering gallery orbits as a self-similar structure in the transmission part of the classical SP matrix.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Eriksson O., Johansson B., Sandalov I. S.
Заглавие : On the non-orthogonality problem in the description of quantum devices
Коллективы : International Conference on Nonequilibrium Carrier Dynamics in Semiconductors
Место публикации : Physica B/ International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (11 ; 1999 ; July ; 19-23 ; Kyoto, Japan). - 1999. - Vol. 272, Is. 1-4. - P.28-30. - ISSN 0921-4526, DOI 10.1016/S0921-4526(99)00343-9
Примечания : Cited References: 8
Предметные рубрики:
Ключевые слова (''Своб.индексиров.''): non-orthogonality--current--tunneling--correlation methods--electric contacts--electric currents--electron energy levels--electron tunneling--equations of motion--green's function--mathematical operators--matrix algebra--hubbard operators--potential barriers--tunneling currents--semiconductor quantum dots
Аннотация: An approach which allows to include the corrections from non-orthogonality of electron states in contacts and quantum dots is developed. Comparison of the energy levels and charge distributions of electrons in 1D quantum dot (QD) in equilibrium, obtained within orthogonal (OR) and non-orthogonal representations (NOR), with the exact ones shows that the NOR provides a considerable improvement, for levels below the top of barrier. The approach is extended to non-equilibrium states. A derivation of the tunneling current through a single potential barrier is performed using equations of motion for correlation functions. A formula for transient current derived by means of the diagram technique for Hubbard operators is given for the problem of QD with strongly correlated electrons interacting with electrons in contacts. The non-orthogonality renormalizes the tunneling matrix elements and spectral weights of Green functions. (C) 1999 Elsevier Science B.V. All rights reserved.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Alekseev K. N., Berman G. P., Campbell D. K.
Заглавие : Strange attractor in resonant tunneling
Место публикации : Phys. Rev. B: AMERICAN PHYSICAL SOC, 1998. - Vol. 58, Is. 7. - P3954-3962. - ISSN 0163-1829, DOI 10.1103/PhysRevB.58.3954
Примечания : Cited References: 38
Предметные рубрики: INTRINSIC BISTABILITY
RING CAVITY
OPTICAL TURBULENCE
TRANSMITTED LIGHT
QUANTUM-WELLS
OSCILLATIONS
BARRIERS
SYSTEM
STATE
TIME
Аннотация: We consider the process of resonant electron tunneling through a double-barrier potential, taking into account nonlinear dynamical effects generated by charge accumulation in the interbarrier space. We use the perturbation approach of Davydov and Ermakov, which was developed for investigating intrinsic bistability in resonant tunneling. For incoming electron flow, which is modulated slowly in time, we show that the resulting nonlinear dynamics can become chaotic, with the chaos described (because of the open nature of the system) by a strange attractor. We determine the conditions for the existence of this strange attractor and estimate characteristic experimental parameters for its observation.
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Patrin G. S., Petrakovskii G. A., Sablina K. A., Ovchinnikov S. G., Varnakov S. N.
Заглавие : Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure
Место публикации : Tech. Phys. Lett.: AMER INST PHYSICS, 2003. - Vol. 29, Is. 3. - P200-202. - ISSN 1063-7850, DOI 10.1134/1.1565633
Примечания : Cited References: 7
Аннотация: We have studied the magnetoresistive properties of a structure comprising single crystal manganite Eu0.7Pb0.3MnO3 covered with an epitaxial iron film. At temperatures below T-C of the manganite crystal, the structure exhibits positive magnetoresistance. The behavior of the resistance as a function of the magnetic field is characteristic of a tunneling junction with ferromagnetic electrodes separated by a thin insulating film. The observed effect is related to the formation of a transition layer at the manganite-Fe interface, which is depleted of oxygen and possesses dielectric properties. The sensitivity of the resistance with respect to the magnetic field is determined both by the negative magnetoresistance of the manganite crystal and by the tunneling contribution to the conductivity, whereby the tunneling current depends on the mutual orientation of magnetic moments of the electrodes (Eu0.7Pb0.3MnO3 crystal and Fe film). (C) 2003 MAIK "Nauka/Interperiodica".
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Nesterov A. I., Ovchinnikov S. G.
Заглавие : Geometric phases and quantum phase transitions in open systems
Место публикации : Phys. Rev. E: AMER PHYSICAL SOC, 2008. - Vol. 78, Is. 1. - Ст.15202. - ISSN 1539-3755, DOI 10.1103/PhysRevE.78.015202
Примечания : Cited References: 29
Предметные рубрики: POINTS
DEGENERACIES
Ключевые слова (''Своб.индексиров.''): chlorine compounds--electron tunneling--ferromagnetism--ising model--magnetic fields--magnetism--open systems--quantum electronics--quantum optics--sedimentation--effective hamiltonian--eigenvalues--first orders--geometric phase--geometric phases--ground-state--hermitian--one-dimensional--open quantum systems--quantum phase transition--quantum phase transitions--transverse-magnetic fields--phase transitions
Аннотация: The relationship is established between quantum phase transitions and complex geometric phases for open quantum systems governed by a non-Hermitian effective Hamiltonian with accidental crossing of the eigenvalues. In particular, the geometric phase associated with the ground state of the one-dimensional dissipative Ising model in a transverse magnetic field is evaluated, and it is demonstrated that the related quantum phase transition is of the first order.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Sandalov I., Eriksson O.
Заглавие : A perfect spin-filter quantum dot system
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 2004. - Vol. 16, Is. 16. - P.L249-L254. - ISSN 0953-8984, DOI 10.1088/0953-8984/16/16/L03
Примечания : Cited References: 39
Предметные рубрики: NARROW ENERGY BANDS
ELECTRON CORRELATIONS
MAGNETIC-FIELD
MAGNETOTRANSPORT
CONDUCTANCE
RESISTANCE
BARRIER
FORMULA
VALVE
LIMIT
Ключевые слова (''Своб.индексиров.''): electric potential--electron tunneling--magnetic couplings--magnetic fields--magnetic filters--transport properties--electron correlations--magnetic contacts--source-drain voltage--spin projections--semiconductor quantum dots
Аннотация: The discovery of a novel effect in the transport through a QD spin-dependently coupled to magnetic contacts is reported. For a finite range of source-drain voltages the spin projections of the current cancel exactly, resulting in a completely suppressed output current. The spin down current behaves as one normally expects whereas the spin up current becomes negative. As the source-drain voltage is increased the spin up current eventually becomes positive. Thus, tuning the source-drain voltage such that the spin up current vanishes will result in a perfect spin filter.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Holmstrom E., Eriksson O., Sandalov I.
Заглавие : Theory of spin filtering through quantum dots
Место публикации : Phys. Rev. B: AMER PHYSICAL SOC, 2003. - Vol. 67, Is. 20. - Ст.205310. - ISSN 1098-0121, DOI 10.1103/PhysRevB.67.205310
Примечания : Cited References: 28
Предметные рубрики: DEPENDENT TUNNELING JUNCTIONS
NARROW ENERGY BANDS
ELECTRON CORRELATIONS
MAGNETORESISTANCE
BARRIER
POLARIZATION
Аннотация: Using a nonequilibrium diagram technique for Hubbard operator Green functions combined with a generalization of the transfer Hamiltonian formalism, we calculate the transport through a magnetic quantum dot system with spin-dependent couplings to the contacts. In specific regimes of the parameter space the spin-dependent tunnel current becomes more than 99.95% spin polarized, suggesting that a device thus constructed can be used in spin-filter applications. First-principles electronic structure calculations show the existence of nanostructured systems, such as, e.g., MgO/Fe/Pd(5)/Fe/MgO (001), with the desired properties in the direction of the current.
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bulgakov E. N., Sadreev A. F.
Заглавие : Current-voltage characteristics of the resonant tunnelling double-barrier structure under time-periodical perturbation
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 1996. - Vol. 8, Is. 45. - P.8869-8887. - ISSN 0953-8984, DOI 10.1088/0953-8984/8/45/020
Примечания : Cited References: 38
Предметные рубрики: SEMICONDUCTOR DOUBLE-BARRIER
OSCILLATING QUANTUM-WELL
DEPENDENT TRANSPORT
INFRARED-RADIATION
TUNNELING TIMES
HETEROSTRUCTURES
TRANSMISSION
MODEL
FREQUENCIES
COHERENT
Аннотация: We consider a typical semiconductor resonant tunnelling GaAs/AlGaAs/GaAs nanostructure which forms a double-barrier potential with quasienergy levels corresponding to transition frequencies in the infrared and microwave regions. Two types of dynamical perturbation of the heterostructure in the form V-1(x, t) = V(1)x cos Omega t and V-2(t) = V-2 cos Omega t are considered. We analyse numerically a reconstruction of the electron transmission through the heterostructure and the current-voltage characteristics (IVC) under the influence of these dynamical perturbations. Both weak and strong perturbations are considered. We investigate the dependences of the transmission on the electron energy and the frequency of the external field with the main accent on the case where a frequency of the perturbation is tuned to a transition between quasienergies of the double-barrier structure. it is found that these resonant phenomena give rise to new peaks and dips in the IVC. In particular, it is shown that the dipole type of perturbation V-1(x, t) gives rise to a Rabi splitting of the transmission peaks and under certain conditions to a Rabi splining of the IVC peaks and dips. We demonstrate that dynamical perturbation may induce a direct current opposite to the direction of the applied voltage, and that this phenomenon takes the form of a sharp dip which has a resonant origin. It is observed that the dipole type of perturbation V-1(x, t) of laser radiation is more effective for tuning the IVC than the first perturbation V-2(t). Also absorption and emission of energy by an electron transmitted through the DBRTS are considered.
WOS,
Scopus
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sakai S., Sugai I., Takanashi K., Matsumoto Y., Entani S., Naramoto H., Avramov P., Maeda Y., Mitani S.
Заглавие : Effect of cotunneling and spin polarization on the large tunneling magnetoresistance effect in granular C60-Co films
Место публикации : Physical Review B: Condensed Matter and Materials Physics: American Physical Society, 2011. - Т. 83, № 17. - С. 174422. - ISSN 1098-0121, DOI 10.1103/PhysRevB.83.174422. - ISSN 1550-235X(eissn)
РИНЦ
Найти похожие

10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shaikhutdinov K. A., Popkov S. I., Semenov S. V., Balaev D. A., Dubrovskiy A. A., Sablina K. A., Volkov N. V.
Заглавие : Low-temperature resistivity of polycrystalline (La0.5Eu 0.5)0.7Pb0.3MnO3 in a magnetic fields
Место публикации : J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5. - ISSN 17426588 (ISSN) , DOI 10.1088/1742-6596/200/5/052025
Ключевые слова (''Своб.индексиров.''): antiferromagnetic grains--comparative analysis--ferromagnetic grain--low temperatures--polycrystalline--specific heat measurement--spin dependent tunneling--transport and magnetic properties--antiferromagnetism--electric resistance--europium--grain boundaries--grain size and shape--lanthanum compounds--lead--magnetic field effects--magnetic properties--magnetoresistance--manganese oxide--single crystals--thermal variables measurement--lanthanum
Аннотация: The effect of grain boundaries on magnetoresistance (MR) of manganites have been investigated by the comparative analysis of the properties of single-crystal and polycrystalline (La0.5Eu0.5) 0.7Pb0.3MnO3. While MR of the single crystal is maximum near the Curie temperature and vanishes in the low-temperature region, the polycrystalline (La0.5Eu0.5)0.7Pb 0.3MnO3 sample exhibits high MR in the low-temperature region. In order to clarify the origin of the low-temperature MR, the transport and magnetic properties of the polycrystalline (La0.5Eu 0.5)0.7Pb0.3MnO3 in magnetic fields have been supplemented by study of magnetic properties and specific heat measurements. The results obtained could be attributed to spin-dependent tunneling between ferromagnetic grains through insulating antiferromagnetic grain boundaries. © 2010 IOP Publishing Ltd.
Scopus,
eLibrary
Найти похожие

11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kolovsky A. R.
Заглавие : Bistability and chaos-assisted tunneling in dissipative quantum systems
Место публикации : Phys. Rev. E. - 2022. - Vol. 106, Is. 1. - Ст.014209. - ISSN 24700045 (ISSN), DOI 10.1103/PhysRevE.106.014209
Примечания : Cited References: 21. - The author acknowledges financial support from the Russian Science Foundation through Grant No. 19-12-00167
Аннотация: We revisit the problem of quantum bi- and multistability by considering the dissipative double resonance model. For a large driving frequency, this system has a simpler phase structure than the driven dissipative nonlinear oscillator, the paradigm model for classical and quantum bistability. This allows us to obtain an analytical estimate for the lifetime of quantum limit cycles. On the other hand, for a small driving frequency, the system is much richer than the nonlinear oscillator. This allows us to address a novel phenomenon of dissipation- and chaos-assisted tunneling between quantum limits cycles.
Смотреть статью,
Scopus
Найти похожие

12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kolovsky A. R., Maksimov D. N.
Заглавие : Mott-insulator state of cold atoms in tilted optical lattices: Doublon dynamics and multilevel Landau-Zener tunneling
Место публикации : Phys. Rev. A: American Physical Society, 2016. - Vol. 94, Is. 4. - Ст.043630. - ISSN 10502947 (ISSN), DOI 10.1103/PhysRevA.94.043630
Примечания : Cited References: 34
Ключевые слова (''Своб.индексиров.''): crystal lattices--optical materials--analytical expressions--cold atoms--doublons--dynamical response--in-laboratory experiments--landau zener tunneling--mott insulator state--optical lattices
Аннотация: We discuss the dynamical response of strongly interacting Bose atoms in an adiabatically tilted optical lattice. The analysis is performed in terms of the multilevel Landau-Zener tunneling. Different regimes of tunneling are identified and analytical expressions for the doublon number, which is the quantity measured in laboratory experiments, are derived. © 2016 American Physical Society.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Berman G. P., Bulgakov E. N., Campbell D. K., Sadreev A. F.
Заглавие : Resonant tunneling in time-periodically modulated semiconductor nanostructures
Место публикации : Physica B. - 1996. - Vol. 225, Is. 1-2. - P.1-22. - ISSN 0921-4526, DOI 10.1016/0921-4526(96)00233-5
Примечания : Cited References: 39
Предметные рубрики: DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.
WOS
Найти похожие

14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tsikalov V. S., Patrin G. S., Kim P. D., Yu S. C., Kim D. H., Chau N.
Заглавие : Switching of current channels and new mechanism of magnetoresistance in a tunneling structure
Коллективы : Russian Foundation for Basic Research [08-02-00259, 08-02-100397]; Ministry of Education and Science of the Russian Federation [2.1.1/6038]
Место публикации : Tech. Phys. Lett. - 2009. - Vol. 35, Is. 11. - P.990-993. - ISSN 1063-7850, DOI 10.1134/S1063785009110054
Примечания : Cited References: 7. - This study was supported by the Russian Foundation for Basic Research (project nos. 08-02-00259 and 08-02-100397) and the Ministry of Education and Science of the Russian Federation (program "Development of Scientific Potential of Higher Education 2009-2010," project no. 2.1.1/6038).
Аннотация: We have experimentally studied the transport properties of a planar La(0.7)Sr(0.3)MnO(3) (LSMO)/Mn-depleted LSMO/MnSi tunneling structure, in which the Mn-depleted LSMO layer plays the role of a potential barrier between the conducting layers of LSMO and MnSi. The measurements were performed in geometry with the current direction parallel to the planes of interfaces in the tunneling structure. It is established that the structure exhibits a nonlinear current-voltage characteristic and possesses a positive magnetoresistance, the value of which depends on the tunneling current. It is suggested that specific features of the transport properties of this structure are related to the phenomenon of current channel switching between the conducting layers. The switching mechanism is based on the dependence of the resistance of the tunneling junction between the conducting layers on the bias voltage and the applied magnetic field.
WOS,
Читать в сети ИФ
Найти похожие

15.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Popkov S. I., Shaikhutdinov K. A., Nikitin S. E., Petrov M. I., Terent'yev K. Yu., Semenov S. V.
Заглавие : Positive magnetoresistance of single-crystal bilayer manganites (La1−zNdz)1.4Sr1.6Mn2O7
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O4.2. - P.222. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 4
Ключевые слова (''Своб.индексиров.''): bilayer manganites--positive magnetoresistance--spin-dependent tunneling
Найти похожие

16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Maksimov D. N., Chesnokov I. Yu., Makarov D. V., Kolovsky A. R.
Заглавие : Landau-zener tunneling in 2d periodic structures in the presense of a gauge field
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism: abstracts. - Vladivostok: FEFU, 2013. - С. 71. - ISBN 978-5-7444-3124-2
Найти похожие

17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zalipaev V. V., Maksimov D. N., Linton C. M., Kusmartsev F. V.
Заглавие : Spectrum of localized states in graphene quantum dots and wires
Место публикации : Phys. Lett. A. - 2013. - Vol. 377, Is. 3-4. - P.216-221. - ISSN 0375-9601, DOI 10.1016/j.physleta.2012.11.028
Ключевые слова (''Своб.индексиров.''): generalized bohr-sommerfeld quantization condition--graphene--high-energy eigenstates--semiclassical approximation--tunneling
Аннотация: We developed semiclassical method and show that any smooth potential in graphene describing elongated a quantum dot or wire may behave as a barrier or as a trapping well or as a double barrier potential, Fabry-Perot structure, for 1D Schrodinger equation. The energy spectrum of quantum wires has been found and compared with numerical simulations. We found that there are two types of localized states, stable and metastable, having finite life time. These life times are calculated, as is the form of the localized wave functions which are exponentially decaying away from the wire in the perpendicular direction. В© 2012 Elsevier B.V. All rights reserved.
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zherikhina L. N., Tskhovrebov A. M., Klinkova L. A., Balaev D. A., Popkov S. I., Shaikhutdinov K. A.
Заглавие : Ba0.6K0.4BiO3 single crystal as a multiple Josephson system: New coherent effect?
Коллективы : International Conference on Low Temperature Physics
Место публикации : Journal of Physics: Conference Series. - 2012. - Vol. 400, Pt. 2. - Ст.022146. - P. - ISSN 1742-6588, DOI 10.1088/1742-6596/400/2/022146
Ключевые слова (''Своб.индексиров.''): antiphase--coherent effect--electric transport--high-t--inhomogeneous superconductors--josephson--josephson junctions--josephson tunneling--non-linear i-v--polycrystalline samples--superconducting gaps--superconducting state--low temperature effects--low temperature engineering--magnetic fields--superconductivity--single crystals
Аннотация: The existence of space inhomogeneous superconductor insulator state (SISIS) found out earlier in polycrystalline samples of high-Tc system Ba0.6K0.4BiO3 (Tc?30 K) is confirmed on Ba0.6K0.4BiO3 single crystal. At T* (T*<Tc, T*?17 K) the transition from the homogeneous superconducting state into the SISIS occurs. SISIS is characterized by the appearance of two gapes on the Fermi surface: semi- and superconducting, that are modulated in space in antiphase, the electric transport between superconducting regions being carried out due to Josephson tunneling. Thus the whole sample becomes a multiple Josephson system. Nonlinear I-V curves, depended on temperature and magnetic field, that are typical to a Josephson system, are observed on Ba0.6K0.4BiO3 single crystal at temperatures below T*. Besides, a step like peculiarity at the values of voltage of the order of one and two superconducting gaps shows up. These peculiarities are suppressed by magnetic field much earlier then critical current. Perhaps the last phenomenon is the consequence of "coherent" state of several successive Josephson junctions, appeared in the exfoliation state. В© Published under licence by IOP Publishing Ltd.
Scopus
Найти похожие

19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V., Ulanov E. A.
Заглавие : Fano effect upon tunneling of a spin-polarized electron through a single magnetic impurity
Место публикации : Low Temp. Phys. - 2013. - Vol. 39, no. 1. - P.35-38. - DOI 10.1063/1.4775746; \b Физика низких температур
Аннотация: The calculations of transport characteristics of a single magnetic impurity showed that the presence of different effective channels for electron transmission results in the Fano effect. It was noticed that the external magnetic field and gate voltage allow controlling the conducting properties, which are governed by the configuration interaction between the states of the system
Смотреть статью
Найти похожие

20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Аксенов, Сергей Владимирович, Аксенов, Сергей Владимирович, Уланов Е. А.
Заглавие : Индуцирование спин-флип-процессами резонанса Фано при туннелировании электрона через спиновые структуры атомного масштаба
Место публикации : Журн. эксперим. и теор. физ. - 2013. - Т. 143, Вып. 5. - С. 984-990. - DOI 10.7868/S0044451013050248
Аннотация: Показано, что включение неупругих спин-зависящих процессов рассеяния электрона на потенциальных профилях одиночной магнитной примеси и спинового димера инициирует резонансные особенности, обусловленные эффектом Фано, в транспортных характеристиках таких спиновых структур атомного масштаба. Для реализации резонанса и антирезонанса Фано принципиальную роль играют спин-флип-процессы, приводящие к конфигурационному взаимодействию состояний системы. Установлено, что приложение внешнего магнитного поля и электрического поля затвора позволяет радикально изменять проводящие свойства спиновых структур через резонансный механизм Фано
Смотреть статью,
Читать в сети ИФ
Найти похожие