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1.


    Kolovsky, A. R.
    Bistability and chaos-assisted tunneling in dissipative quantum systems / A. R. Kolovsky // Phys. Rev. E. - 2022. - Vol. 106, Is. 1. - Ст. 014209, DOI 10.1103/PhysRevE.106.014209. - Cited References: 21. - The author acknowledges financial support from the Russian Science Foundation through Grant No. 19-12-00167 . - ISSN 2470-0045
Кл.слова (ненормированные):
Bi-stability -- Chaos-assisted tunneling -- Dissipative quantum systems -- Double resonance -- Driving frequencies -- Limit-cycle -- Multistability -- Non-linear oscillators -- Quantum limit -- Resonance model
Аннотация: We revisit the problem of quantum bi- and multistability by considering the dissipative double resonance model. For a large driving frequency, this system has a simpler phase structure than the driven dissipative nonlinear oscillator, the paradigm model for classical and quantum bistability. This allows us to obtain an analytical estimate for the lifetime of quantum limit cycles. On the other hand, for a small driving frequency, the system is much richer than the nonlinear oscillator. This allows us to address a novel phenomenon of dissipation- and chaos-assisted tunneling between quantum limits cycles.

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Держатели документа:
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Коловский, Андрей Радиевич
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2.


   
    Positive magnetoresistance of single-crystal bilayer manganites (La1−zNdz)1.4Sr1.6Mn2O7 / S. I. Popkov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. O4.2. - P. 222. - References: 4 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
bilayer manganites -- positive magnetoresistance -- spin-dependent tunneling


Доп.точки доступа:
Popkov, S. I.; Попков, Сергей Иванович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Nikitin, S. E.; Никитин, Станислав Евгеньевич; Petrov, M. I.; Петров, Михаил Иванович; Terent'yev, K. Yu.; Терентьев, Константин Юрьевич; Semenov, S. V.; Семёнов, Сергей Васильевич; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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3.


    Kolovsky, A. R.
    Mott-insulator state of cold atoms in tilted optical lattices: Doublon dynamics and multilevel Landau-Zener tunneling / A. R. Kolovsky, D. N. Maksimov // Phys. Rev. A. - 2016. - Vol. 94, Is. 4. - Ст. 043630, DOI 10.1103/PhysRevA.94.043630. - Cited References: 34 . - ISSN 1050-2947
Кл.слова (ненормированные):
Crystal lattices -- Optical materials -- Analytical expressions -- Cold atoms -- Doublons -- Dynamical response -- In-laboratory experiments -- Landau zener tunneling -- Mott insulator state -- Optical lattices
Аннотация: We discuss the dynamical response of strongly interacting Bose atoms in an adiabatically tilted optical lattice. The analysis is performed in terms of the multilevel Landau-Zener tunneling. Different regimes of tunneling are identified and analytical expressions for the doublon number, which is the quantity measured in laboratory experiments, are derived. © 2016 American Physical Society.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Maksimov, D. N.; Максимов, Дмитрий Николаевич; Коловский, Андрей Радиевич
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4.


    Aplesnin, S. S.
    Magnetoresistance effect in anion-substituted manganese chalcogenides / S. S. Aplesnin, O. B. Romanova, K. I. Yanushkevich // Phys. Status Solidi B. - 2015. - Vol. 252, Is. 8. - P. 1792-1798, DOI 10.1002/pssb.201451607. - Cited References: 35. - This study was supported by the official assignment no. 114090470016. . - ISSN 0370. - ISSN 1521-3951. -
РУБ Physics, Condensed Matter
Рубрики:
MAGNETIC-PROPERTIES
   ELECTRONIC-STRUCTURE

   SOLID-SOLUTIONS

   MnTe

   MnSe

   CONDUCTIVITY

   TRANSITION

Кл.слова (ненормированные):
Electron tunneling -- Magnetic properties -- Magnetoresistance -- Semiconductors
Аннотация: The electric and magnetic properties of anion-substituted antiferromagnetic MnSe1-xTex (0.1≤x≤0.4) semiconductors in the 77-700K temperature range and magnetic fields under 1T are studied. In the MnSe1-xTex solid solutions, negative magnetoresistance in the vicinity of the Néel temperature for x=0.1 and for composition with x=0.2 in the paramagnetic range below 270K is revealed. A dependence of the magnetic susceptibility versus the prehistory of the samples is found. The model of localized spin-polarized electrons with the localization radius depending on the magnetic field is proposed for x=0.1. In the paramagnetic range, the negative magnetoresistance and the behavior of magnetic moment are a result of orbital glass formation.

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Держатели документа:
Kirensky Institute of Physics SB RAS, Akademgorodok 50, Krasnoyarsk, Russian Federation
Siberian State Aerospace University M F Reshetnev, Krasnoyarsky Rabochy Av. 31, Krasnoyarsk, Russian Federation
Scientific-Practical Materials Research Center NAS, P. Brovski Str.19, Minsk, Belarus

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Янушкевич, Казимир Иосифович; Yanushkevich K. I.; Аплеснин, Сергей Степанович
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5.


    Kagan, M. Y.
    Anomalous superconductivity and superfluidity in repulsive fermion systems / M. Y. Kagan, V. A. Mitskan, M. M. Korovushkin // Phys. Usp. - 2015. - Vol. 58, Is. 8. - P. 733-761, DOI 10.3367/UFNe.0185.201508a.0785. - Cited References: 369. - We are grateful to M A Baranov, A V Chubukov, D V Efremov, M V Feigel'man, V V Kabanov, K I Kugel', M S Marienko, N M Plakida, N V Prokorev, A Ya Tzalenchuk, and V V Val'kov for the fruitful discussions and constant attention to our work. The work was supported by the Russian Foundation for Basic Research (project nos. 14-02-00058 and 14-02-31237). M Yu K thanks the Program of Basic Research of the National Research University Higher School of Economics for support. The work of MM K was supported by grant of the President of the Russian Federation (SP-1361.2015.1) and the Dinasty Foundation . - ISSN 1063-7869
РУБ Physics, Multidisciplinary
Рубрики:
HEXAGONAL BORON-NITRIDE
   SCANNING-TUNNELING-MICROSCOPY

   2-DIMENSIONAL HUBBARD-MODEL

   HIGH-TC SUPERCONDUCTIVITY

   ELECTRON-ENERGY SPECTRUM

   P-WAVE SUPERCONDUCTIVITY

   DOUBLE-LAYER GRAPHENE

   2D KONDO-LATTICE

   GROUND-STATE

   TRANSITION-TEMPERATURE

Кл.слова (ненормированные):
anomalous superconductivity -- Kohn-Luttinger mechanism -- superfluidity -- repulsive Fermi gas -- Hubbard and t-Jmodel -- Shubin Vonsovsky model -- graphene monolayer -- graphene bilayer
Аннотация: We discuss the mechanisms of unconventional superconductivity and superfluidity in 3D and 2D fermionic systems with purely repulsive interaction at low densities. We construct phase diagrams of these systems and find the areas of the superconducting state in free space, as well as on the lattice in the framework of the Fermi-gas model with hard-core repulsion, the Hubbard model, the Shubin-Vonsovsky model, and the t-J model. We demonstrate that the critical superconducting temperature can be greatly increased in the spin-polarized case or in a two-band situation already at low densities. The proposed theory is based on the Kohn-Luttinger mechanism or its generalizations and explains or predicts anomalous p-, d-, and f-wave pairing in various materials, such as high-temperature superconductors, the idealized monolayer and bilayer of doped graphene, heavy-fermion systems, layered organic superconductors, superfluid 3He, spin-polarized 3He mixtures in 4He, ultracold quantum gases in magnetic traps, and optical lattices.

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Публикация на русском языке Каган, Максим Юрьевич. Аномальная сверхпроводимость и сверхтекучесть в фермионных системах с отталкиванием [Текст] / М. Ю. Каган, В. А. Мицкан, М. М. Коровушкин // Успехи физ. наук : ред. журн. "Успехи физ. наук", 2015. - Т. 185 № 8. - С. 785-815

Держатели документа:
Kapitza Institute for Physical Problems, Russian Academy of Sciences, ul. Kosygina 2, Moscow, Russian Federation
National Research University, Higher School of Economics, ul. Myasnitskaya 20, Moscow, Russian Federation
Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Akademgorodok 50, str. 38, Krasnoyarsk, Russian Federation
Reshetnev Siberian State Aerospace University, prosp. Gazety Krasnoyarskii rabochii 31, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Mitskan, V. A.; Мицкан, Виталий Александрович; Korovushkin, M. M.; Коровушкин, Максим Михайлович
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6.


    Bulgakov, E. N.
    Induced tunneling and localization for a quantum particle in tilted two-dimensional lattices / E. N. Bulgakov, A. R. Kolovsky // Phys. Rev. B. - 2014. - Vol. 89, Is. 3. - Ст. 035116, DOI 10.1103/PhysRevB.89.035116. - Cited References: 17. - The authors express their gratitude to D. N. Maksimov for useful remarks and acknowledge financial support of the Russian Academy of Sciences through the SB RAS integration project No. 29 Dynamics of atomic Bose-Einstein condensates in optical lattices. . - ISSN 1098-0121. - ISSN 1550-235X
   Перевод заглавия: Индуцированное туннелирование и локализация квантовой частицы в наклонных двухмерных решетках
РУБ Physics, Condensed Matter
Рубрики:
DYNAMIC LOCALIZATION
   CHARGED-PARTICLE

   OPTICAL LATTICE

   ELECTRIC-FIELD

   DIRAC POINTS

Аннотация: We consider a quantum particle in tilted two-dimensional lattices in the tight-binding approximations. We show that for certain lattice geometries the particle can freely move across the lattice in the direction perpendicular to the vector of the static force. This effect is argued to be analog of the photon-induced tunneling in driven one-dimensional lattices. We calculate the particle dispersion relation by using a method based on the Bogoliubov-Mitropolskii averaging technique from the theory of dynamical systems. This dispersion relation draws the analogy with driven one-dimensional lattices further by eventually showing band collapses when a control parameter is varied.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Kolovsky, A. R.; Коловский, Андрей Радиевич; Булгаков, Евгений Николаевич; Russian Academy of Sciences through the SB RAS [29]
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7.


    Аксенов, Сергей Владимирович.
    Индуцирование спин-флип-процессами резонанса Фано при туннелировании электрона через спиновые структуры атомного масштаба [Текст] / В. В. Вальков, С. В. Аксенов, Е. А. Уланов // Журн. эксперим. и теор. физ. - 2013. - Т. 143, Вып. 5. - С. 984-990DOI 10.7868/S0044451013050248
Аннотация: Показано, что включение неупругих спин-зависящих процессов рассеяния электрона на потенциальных профилях одиночной магнитной примеси и спинового димера инициирует резонансные особенности, обусловленные эффектом Фано, в транспортных характеристиках таких спиновых структур атомного масштаба. Для реализации резонанса и антирезонанса Фано принципиальную роль играют спин-флип-процессы, приводящие к конфигурационному взаимодействию состояний системы. Установлено, что приложение внешнего магнитного поля и электрического поля затвора позволяет радикально изменять проводящие свойства спиновых структур через резонансный механизм Фано

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Переводная версия Spin-flip induction of Fano resonance upon electron tunneling through atomic-scale spin structures. - [Б. м. : б. и.]

Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Aksenov, S. V.; Уланов, Е. А.
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8.


    Val'kov, V. V.
    Fano effect upon tunneling of a spin-polarized electron through a single magnetic impurity / V.V. Val'kov, S. V. Aksenov, E. A. Ulanov // Low Temp. Phys. - 2013. - Vol. 39, no. 1. - P. 35-38 ; Физика низких температурDOI 10.1063/1.4775746
   Перевод заглавия: Эффект Фано при туннелировании спин-поляризованного электрона через одиночную магнитную примесь
Аннотация: The calculations of transport characteristics of a single magnetic impurity showed that the presence of different effective channels for electron transmission results in the Fano effect. It was noticed that the external magnetic field and gate voltage allow controlling the conducting properties, which are governed by the configuration interaction between the states of the system

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Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Ulanov, E. A.; Вальков, Валерий Владимирович

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9.


    Вальков, Валерий Владимирович.
    Эффект Фано при туннелировании спин-поляризованного электрона через одиночную магнитную примесь / В. В. Вальков, С. В. Аксенов, Е. А. Уланов // Физ. низких температур. - 2013. - Т. 39, Вып. 1. - С. 48-52

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Переводная версия Val'kov, V. V. Fano effect upon tunneling of a spin-polarized electron through a single magnetic impurity / V.V. Val'kov // Low Temperature Physics / Физика низких температур . - 2013. - Vol. 39, no. 1. - P.35-38

Держатели документа:
Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Siberian Aerosp Univ, Krasnoyarsk 660014, Russia

Доп.точки доступа:
Аксенов, Сергей Владимирович; Aksenov, S. V.; Уланов, Е. А.; Val'kov, V. V.
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10.


    Val'kov, V. V.
    Spin-flip induction of Fano resonance upon electron tunneling through atomic-scale spin structures / V.V. Val'kov // J. Experim. Theor. Phys. - 2013. - Vol. 116, Is. 5. - P. 854-859DOI 10.1134/S1063776113050130
Аннотация: The inclusion of inelastic spin-dependent electron scatterings by the potential profiles of a single magnetic impurity and a spin dimer is shown to induce resonance features due to the Fano effect in the transport characteristics of such atomic-scale spin structures. The spin-flip processes leading to a configuration interaction of the system’s states play a fundamental role for the realization of Fano resonance and antiresonance. It has been established that applying an external magnetic field and a gate electric field allows the conductive properties of spin structures to be changed radically through the Fano resonance mechanism

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Публикация на русском языке Индуцирование спин-флип-процессами резонанса Фано при туннелировании электрона через спиновые структуры атомного масштаба. - [S. l. : s. n.]

Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia;

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Ulanov, E. A.; Вальков, Валерий Владимирович
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11.


   
    Landau-zener tunneling in 2d periodic structures in the presense of a gauge field / D. N. Maksimov [и др.] // V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism : abstracts. - Vladivostok : FEFU, 2013 = EASTMag-2013. - P71 . - ISBN 978-5-7444-3124-2


Доп.точки доступа:
Maksimov, D. N.; Максимов, Дмитрий Николаевич; Chesnokov, I. Yu.; Чесноков, Илья Юрьевич; Makarov, D. V.; Макаров Д.В.; Kolovsky, A. R.; Коловский, Андрей Радиевич; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; Sept. ; 15-21 ; Vladivostok)
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12.


   
    Spectrum of localized states in graphene quantum dots and wires / V. V. Zalipaev [et al.] // Phys. Lett. A. - 2013. - Vol. 377, Is. 3-4. - P. 216-221, DOI 10.1016/j.physleta.2012.11.028 . - ISSN 0375-9601
Кл.слова (ненормированные):
Generalized Bohr-Sommerfeld quantization condition -- Graphene -- High-energy eigenstates -- Semiclassical approximation -- Tunneling
Аннотация: We developed semiclassical method and show that any smooth potential in graphene describing elongated a quantum dot or wire may behave as a barrier or as a trapping well or as a double barrier potential, Fabry-Perot structure, for 1D Schrodinger equation. The energy spectrum of quantum wires has been found and compared with numerical simulations. We found that there are two types of localized states, stable and metastable, having finite life time. These life times are calculated, as is the form of the localized wave functions which are exponentially decaying away from the wire in the perpendicular direction. В© 2012 Elsevier B.V. All rights reserved.

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Держатели документа:
Univ Loughborough, Dept Math Sci, Loughborough LE11 3TU, Leics, England
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Univ Loughborough, Dept Phys, Loughborough LE11 3TU, Leics, England

Доп.точки доступа:
Zalipaev, V. V.; Maksimov, D. N.; Максимов, Дмитрий Николаевич; Linton, C. M.; Kusmartsev, F. V.
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13.


   
    Ba0.6K0.4BiO3 single crystal as a multiple Josephson system: New coherent effect? / L. N. Zherikhina [et al.] // Journal of Physics: Conference Series. - 2012. - Vol. 400, Pt. 2. - Ст. 022146. - P. , DOI 10.1088/1742-6596/400/2/022146 . - ISSN 1742-6588
Кл.слова (ненормированные):
Antiphase -- Coherent effect -- Electric transport -- High-T -- Inhomogeneous superconductors -- Josephson -- Josephson junctions -- Josephson tunneling -- Non-linear I-V -- Polycrystalline samples -- Superconducting gaps -- Superconducting state -- Low temperature effects -- Low temperature engineering -- Magnetic fields -- Superconductivity -- Single crystals
Аннотация: The existence of space inhomogeneous superconductor insulator state (SISIS) found out earlier in polycrystalline samples of high-Tc system Ba0.6K0.4BiO3 (Tc?30 K) is confirmed on Ba0.6K0.4BiO3 single crystal. At T* (T*<Tc, T*?17 K) the transition from the homogeneous superconducting state into the SISIS occurs. SISIS is characterized by the appearance of two gapes on the Fermi surface: semi- and superconducting, that are modulated in space in antiphase, the electric transport between superconducting regions being carried out due to Josephson tunneling. Thus the whole sample becomes a multiple Josephson system. Nonlinear I-V curves, depended on temperature and magnetic field, that are typical to a Josephson system, are observed on Ba0.6K0.4BiO3 single crystal at temperatures below T*. Besides, a step like peculiarity at the values of voltage of the order of one and two superconducting gaps shows up. These peculiarities are suppressed by magnetic field much earlier then critical current. Perhaps the last phenomenon is the consequence of "coherent" state of several successive Josephson junctions, appeared in the exfoliation state. В© Published under licence by IOP Publishing Ltd.

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Доп.точки доступа:
Zherikhina, L. N.; Tskhovrebov, A. M.; Klinkova, L. A.; Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; International Conference on Low Temperature Physics(26 ; 2011 ; Aug. ; 1-17 ; Beijing, China)
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14.


    Karpov, S. V.
    The role of the electron tunneling effect in the coagulation kinetics of polydisperse metal nanocolloids / S. V. Karpov, P. N. Semina, A. P. Gavrilyuk // Colloid J. - 2012. - Vol. 74, Is. 3. - P. 305-312, DOI 10.1134/S1061933X12030052. - Cited References: 16. - Authors are thankful to G. A. Chiganova for discussions and helpful comments. Studies were carried out with the support of grants: the Presidium of RAS No 29 and No 31, OFN RAS III.9.5, IP SB RAS No 43, IP SB RAS (and SFU) No 101. . - ISSN 1061-933X
РУБ Chemistry, Physical
Рубрики:
PARTICLES
Аннотация: The energy of pair interactions between metal nanoparticles of different sizes is shown to be able to increase upon coagulation due to the additional electrostatic effect resulting from mutual heteropolar charging of the particles. The tunnel electron transfer occurring upon the collisions between particles of different sizes may be the reason for the charging. The transfer is caused by the dependence of the electron work function on the particle size. The electron transfer through the interparticle gap equalizes the Fermi levels in particles of different sizes and is associated with this dependence. Using the example of bimodal silver nanocolloids, it is shown that mutual heteropolar charging of particles with different sizes may accelerate the coagulation of polydisperse colloidal systems by an order of magnitude or more as compared with monodisperse systems, in which this effect is absent.

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Публикация на русском языке Карпов, Сергей Васильевич. Роль электронного туннельного эффекта в кинетике коагуляции полидисперсных наноколлоидов металлов [Текст] / С. В. Карпов, П. Н. Сёмина, А. П. Гаврилюк // Коллоид. журн. - М. : Наука, 2012. - Т. 74 № 3. - С. 329-336

Держатели документа:
[Karpov, S. V.
Semina, P. N.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Karpov, S. V.] Siberian Fed Univ, Krasnoyarsk 660028, Russia
[Gavrilyuk, A. P.] Russian Acad Sci, Siberian Branch, Inst Computat Modeling, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Semina, P. N.; Семина, Полина Николаевна; Gavrilyuk, A. P.; Карпов, Сергей Васильевич
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15.


    Kolovsky, A. R.
    Energetically constrained co-tunneling of cold atoms / A. R. Kolovsky, J. Link, S. Wimberger // New J. Phys. - 2012. - Vol. 14. - Ст. 75002, DOI 10.1088/1367-2630/14/7/075002. - Cited References: 18. - The present project was supported by the Excellence Initiative (Enable Fund of the Faculty of Physics and Astronomy, Heidelberg University). Moreover, SW acknowledges financial support from the DFG through FOR760, the Helmholtz Alliance Program of the Helmholtz Association (contract number HA-216: Extremes of density and temperature: cosmic matter in the laboratory), and by the Heidelberg Graduate School of Fundamental Physics (grant number GSC 129/1) and AK acknowledges support from the Russian Foundation for Basic Research (project number 12-02-000094-a: Tunneling of the macroscopic quantum states) and by the Siberian Branch of RAS (project no. 29: Dynamics of atomic Bose-Einstein condensates in optical lattices). AK is very grateful for the hospitality of the Institute of Theoretical Physics of Heidelberg University. . - ISSN 1367-2630
РУБ Physics, Multidisciplinary
Рубрики:
LATTICE
Аннотация: We study under-barrier tunneling for a pair of energetically bound bosonic atoms in an optical lattice with a barrier. We identify the conditions under which this exotic molecule tunnels as a point particle with the coordinate given by the bound pair center of mass and discuss the atomic co-tunneling beyond this regime. In particular, we quantitatively analyze resonantly enhanced co-tunneling, where two interacting atoms penetrate the barrier with higher probability than a single atom.

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Держатели документа:
[Kolovsky, Andrey R.] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Kolovsky, Andrey R.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Link, Julia
Wimberger, Sandro] Univ Heidelberg, Inst Theoret Phys, D-69120 Heidelberg, Germany

Доп.точки доступа:
Link, J.; Wimberger, S.; Коловский, Андрей Радиевич
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16.


   
    Effect of cotunneling and spin polarization on the large tunneling magnetoresistance effect in granular C60-Co films / S. Sakai [et al.] // Physical Review B: Condensed Matter and Materials Physics. - 2011. - Т. 83, № 17. - P174422, DOI 10.1103/PhysRevB.83.174422 . - ISSN 1098-0121. - ISSN 1550-235X

РИНЦ
Держатели документа:
Advanced Science Research Center,Japan Atomic Energy Agency
Department of Energy Science and Technology,Kyoto University
Institute for Materials Research,Tohoku University
National Institute for Materials Science

Доп.точки доступа:
Sakai, S.; Sugai, I.; Takanashi, K.; Matsumoto, Y.; Entani, S.; Naramoto, H.; Avramov, P.; Maeda, Y.; Mitani, S.
}
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17.


    Ovchinnikov, S. G.
    Effect of interlayer tunneling on the electronic structure of bilayer cuprates and quantum phase transitions in carrier concentration and high magnetic field / S. G. Ovchinnikov, I. A. Makarov, E. I. Shneyder // J. Exp. Theor. Phys. - 2011. - Vol. 112, Is. 2. - P. 288-302, DOI 10.1134/S106377611005119X. - Cited References: 64. - This study was supported financially by the program "Quantum Physics of Condensed Media" of the Presidium of the Russian Academy of Sciences (project no. 5.7), the integration projects of the Siberian Branch and the Ural Division of the Russian Academy of Sciences (project no. 40), the Russian Foundation for Basic Research (project no. 09-02-00127), the President of the Russian Federation (grant no. MK-1683.2010.2), and the Federal Target Program P891. . - ISSN 1063-7761
РУБ Physics, Multidisciplinary
Рубрики:
T-J MODEL
   HIGH-TEMPERATURE SUPERCONDUCTORS

   DIMENSIONAL HUBBARD-MODEL

   FERMI-SURFACE

   COPPER OXIDES

   GROUND-STATE

   CUO2 PLANES

   SPECTRUM

   BAND

   NMR

Кл.слова (ненормированные):
Antibonding -- Bi-layer -- Bilayer cuprates -- Complex sequences -- Cuprates -- Doping levels -- External magnetic field -- Field magnitude -- Hartree-Fock approximations -- High magnetic fields -- Lifshitz transition -- Main effect -- Orbitals -- Perturbation theory -- Quantum phase transitions -- Quantum transitions -- Single-layer structure -- Theoretical study -- Unit cells -- Carrier concentration -- Copper compounds -- Density functional theory -- Electronic properties -- Electronic structure -- Hartree approximation -- Magnetic fields -- Perturbation techniques -- Phase transitions -- Surface structure -- Quantum theory
Аннотация: We present a theoretical study of the electronic structure of bilayer HTSC cuprates and its evolution under doping and in a high magnetic field. Analysis is based on the t-t'-taEuro(3)-J* model in the generalized Hartree-Fock approximation. Possibility of tunneling between CuO2 layers is taken into account in the form of a nonzero integral of hopping between the orbitals of adjacent planes and is included in the scheme of the cluster form of perturbation theory. The main effect of the coupling between two CuO2 layers in a unit cell is the bilayer splitting manifested in the presence of antibonding and bonding bands formed by a combination of identical bands of the layers themselves. A change in the doping level induces reconstruction of the band structure and the Fermi surface, which gives rise to a number of quantum phase transitions. A high external magnetic field leads to a fundamentally different form of electronic structure. Quantum phase transitions in the field are observed not only under doping, but also upon a variation of the field magnitude. Because of tunneling between the layers, quantum transitions are also split; as a result, a more complex sequence of the Lifshitz transitions than in single-layer structures is observed.

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Публикация на русском языке Овчинников, Сергей Геннадьевич. Влияние межслойного туннелирования на электронную структуру двухслойных купратов и квантовые фазовые переходы по концентрации носителей и сильному магнитному полю [Текст] / С. Г. Овчинников, И. А. Макаров, Е. И. Шнейдер // Журнал экспериментальной и теоретической физики. - 2011. - Т. 139 Вып. 2. - С. 334-350

Держатели документа:
[Ovchinnikov, S. G.
Makarov, I. A.
Shneyder, E. I.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Ovchinnikov, S. G.
Shneyder, E. I.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Makarov, I. A.; Макаров, Илья Анатольевич; Shneyder, E. I.; Шнейдер, Елена Игоревна; Овчинников, Сергей Геннадьевич
}
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18.


    Kolovsky, A. R.
    Creating artificial magnetic fields for cold atoms by photon-assisted tunneling / A. R. Kolovsky // Europhys. Lett. - 2011. - Vol. 93, Is. 2. - Ст. 20003, DOI 10.1209/0295-5075/93/20003. - Cited References: 20. - This work was supported by Russian Foundation for Basic Research, grant RFBR-10-02-00171-a. . - ISSN 0295-5075
РУБ Physics, Multidisciplinary
Рубрики:
BLOCH OSCILLATIONS
   OPTICAL LATTICES

   NEUTRAL ATOMS

Аннотация: This paper proposes a simple setup for introducing an artificial magnetic field for neutral atoms in 2D optical lattices. This setup is based on the phenomenon of photon-assisted tunneling and involves a low-frequency periodic driving of the optical lattice. This low-frequency driving does not affect the electronic structure of the atom and can be easily realized by the same means which are employed to create the lattice. We also address the problem of detecting this effective magnetic field. In particular, we study the center-of-mass wave packet dynamics, which is shown to exhibit certain features of cyclotron dynamics of a classical charged particle. Copyright (C) EPLA, 2011

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Держатели документа:
[Kolovsky, A. R.] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Kolovsky, A. R.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation
Siberian Federal University, 660041 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Коловский, Андрей Радиевич
}
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19.


   
    Low-temperature resistivity of polycrystalline (La0.5Eu 0.5)0.7Pb0.3MnO3 in a magnetic fields / K. A. Shaykhutdinov [et al.] // J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5, DOI 10.1088/1742-6596/200/5/052025 . - ISSN 1742-6588
Кл.слова (ненормированные):
Antiferromagnetic grains -- Comparative analysis -- Ferromagnetic grain -- Low temperatures -- Polycrystalline -- Specific heat measurement -- Spin dependent tunneling -- Transport and magnetic properties -- Antiferromagnetism -- Electric resistance -- Europium -- Grain boundaries -- Grain size and shape -- Lanthanum compounds -- Lead -- Magnetic field effects -- Magnetic properties -- Magnetoresistance -- Manganese oxide -- Single crystals -- Thermal variables measurement -- Lanthanum
Аннотация: The effect of grain boundaries on magnetoresistance (MR) of manganites have been investigated by the comparative analysis of the properties of single-crystal and polycrystalline (La0.5Eu0.5) 0.7Pb0.3MnO3. While MR of the single crystal is maximum near the Curie temperature and vanishes in the low-temperature region, the polycrystalline (La0.5Eu0.5)0.7Pb 0.3MnO3 sample exhibits high MR in the low-temperature region. In order to clarify the origin of the low-temperature MR, the transport and magnetic properties of the polycrystalline (La0.5Eu 0.5)0.7Pb0.3MnO3 in magnetic fields have been supplemented by study of magnetic properties and specific heat measurements. The results obtained could be attributed to spin-dependent tunneling between ferromagnetic grains through insulating antiferromagnetic grain boundaries. © 2010 IOP Publishing Ltd.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Popkov, S. I.; Попков, Сергей Иванович; Semenov, S. V.; Balaev, D. A.; Балаев, Дмитрий Александрович; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Sablina, K. A.; Саблина, Клара Александровна; Volkov, N. V.; Волков, Никита Валентинович
}
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20.


   
    Switching of current channels and new mechanism of magnetoresistance in a tunneling structure / N. V. Volkov [et al.] // Tech. Phys. Lett. - 2009. - Vol. 35, Is. 11. - P. 990-993, DOI 10.1134/S1063785009110054. - Cited References: 7. - This study was supported by the Russian Foundation for Basic Research (project nos. 08-02-00259 and 08-02-100397) and the Ministry of Education and Science of the Russian Federation (program "Development of Scientific Potential of Higher Education 2009-2010," project no. 2.1.1/6038). . - ISSN 1063-7850
РУБ Physics, Applied

Аннотация: We have experimentally studied the transport properties of a planar La(0.7)Sr(0.3)MnO(3) (LSMO)/Mn-depleted LSMO/MnSi tunneling structure, in which the Mn-depleted LSMO layer plays the role of a potential barrier between the conducting layers of LSMO and MnSi. The measurements were performed in geometry with the current direction parallel to the planes of interfaces in the tunneling structure. It is established that the structure exhibits a nonlinear current-voltage characteristic and possesses a positive magnetoresistance, the value of which depends on the tunneling current. It is suggested that specific features of the transport properties of this structure are related to the phenomenon of current channel switching between the conducting layers. The switching mechanism is based on the dependence of the resistance of the tunneling junction between the conducting layers on the bias voltage and the applied magnetic field.

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Держатели документа:
[Volkov, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Siberian State Aerosp Univ, Krasnoyarsk 660041, Russia
Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
Natl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam
ИФ СО РАН

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tsikalov, V. S.; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Yu, S. C.; Kim, D. H.; Chau, N.; Russian Foundation for Basic Research [08-02-00259, 08-02-100397]; Ministry of Education and Science of the Russian Federation [2.1.1/6038]
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